CN106505839A - A kind of IGBT device drive circuit and method for reducing closing loss - Google Patents
A kind of IGBT device drive circuit and method for reducing closing loss Download PDFInfo
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- CN106505839A CN106505839A CN201611004739.5A CN201611004739A CN106505839A CN 106505839 A CN106505839 A CN 106505839A CN 201611004739 A CN201611004739 A CN 201611004739A CN 106505839 A CN106505839 A CN 106505839A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/44—Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention discloses a kind of IGBT device drive circuit for reducing switching loss and method, including detection module, electric current drive module, comparison module and Logic control module；The input of Logic control module is used for connecting the pulse-width signal of outside and digit order number selects signal, the feedback end of Logic control module connects the output end of comparison module, the input of electric current drive module is connected to the output end of Logic control module, the output end of electric current drive module is used for the control end for connecting IGBT device, the input of detection module is used for the output end for being connected to IGBT device, and the output end of detection module is connected to the input of comparison module.The present invention can reduce the switch-off power loss of IGBT device, avoid because caused by shut-off, Current Voltage overshoot burns device, simultaneously can be with the output voltage of precise control drive circuit and electric current, accelerate turn-off speed while IGBT shut-off overshoot voltages are not increased, signal delay is less, it is ensured that the backfeed loop normal work of IGBT device drive module within the of short duration turn-off time.
Description
Technical field
The invention belongs to field of power electronics, drives electricity more particularly, to a kind of IGBT device for reducing closing loss
Road.
Background technology
IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) is by MOSFET
A kind of device that (insulated gate field-effect pipe, input stage) and BJT transistors (double pole triode, output stage) are composited,
The characteristics of existing MOSFET element driving power is little fast with switching speed (control and response), has bipolar device saturation voltage drop again
The characteristics of low and big capacity (power stage is more durable), frequency characteristic, can normal works between MOSFET and power transistor
Make in, in tens kHz frequency ranges, to be the leading device of middle low power power electronic equipment, be widely used in frequency converter, illumination
The fields such as circuit, Switching Power Supply.
It is between main circuit and control circuit, for the centre processed by the signal of control circuit that IGBT drives
Circuit, the control signal of its input Access Control circuit, and output end is connected to IGBT grids.By built-in a series of
Circuit realiration is adjusted and power amplification to the isolation transmission of control signal, level so that control circuit can to IGBT open and
Shut-off is controlled, and then realizes the types of functionality of circuit.
Drive circuit is the bridge for connecting control circuit and IGBT device, as IGBT is used for high pressure occasion, it is desirable to have
Enough input, output electric isolution ability, so drive circuit should strictly be isolated on current potential with whole control circuit.Additionally,
IGBT drive circuit is also closely related with the reliability of IGBT, and the IGBT drive circuit of high-quality can optimize IGBT switching characteristics, subtract
Few turn-off time and loss, improve system effectiveness.Conventional IGBT open loops drive circuit is by way of changing resistance Rg
Control gate driving current Ig：When Rg is less, grid current is larger, and now the turn-off speed of IGBT device is very fast, but by
In the presence of stray inductance, larger voltage overshoot phenomenon, the serious damage for being likely to result in device on dc bus, can be produced.
And when Rg is larger, grid current is less, now the turn-off speed of IGBT device is slower, and the time of shut-off is longer, according to IGBT
The oscillogram in shut-off period understands that voltage and current in the IGBT device overlapping time is consequently increased, and this can cause larger
Turn-off power loss and electromagnetic interference (EMI), improve the overall power consumption of system, cause the ill effects such as heating.
Content of the invention
For the defect of prior art, it is an object of the invention to provide a kind of IGBT device for reducing closing loss drives
Circuit, it is intended to larger turn-off power loss and electromagnetic interference can be produced when solving the problems, such as that IGBT is turned off in prior art.
The invention provides a kind of IGBT device drive circuit for reducing switching loss, including：Detection module, electric current drive
Module, comparison module and Logic control module；The input of the Logic control module is used for the pulsewidth modulation letter for connecting outside
Number and digit order number select signal, the feedback end of the Logic control module connects the output end of the comparison module, and the electric current drives
The input of dynamic model block is connected to the output end of the Logic control module, and the output end of the electric current drive module is used for connecting
The control end of IGBT device, the input of the detection module are used for the output end for being connected to IGBT device, the detection module
Output end be connected to the input of the comparison module.
Wherein, during work, switch of the Logic control module from outside access pulse-width signal control electric current drive module,
And then control being switched on and off for IGBT device；By the voltage derivative value in detection module real-time sampling IGBT turn off process,
The voltage of collection is compared with default reference voltage by comparison module, outputs control signals to Logic control module；
Digit order number can be input into selects signal to Logic control module simultaneously, two signals co- controlling electric current after Logic control module process
The working condition of drive module；Electric current drive module provides size in IGBT turn off process according to the output of Logic control module
Controllable driving current.
The present invention is compared with referential data by sampled voltage differential value signal, and then control electric current drive module
Number is opened and closed, can be used for the switch-off power loss for reducing IGBT device, it is to avoid because of Current Voltage overshoot caused by shut-off
Device is burnt, from unlike conventional open loop mode IGBT drive schemes, this programme uses voltage derivative value as feedback quantity,
Ensure overall feedback loop low latency (<20ns), realize to raster data model closed-loop control, can be with precise control drive circuit
Output voltage and electric current, accelerate turn-off speed while IGBT shut-off overshoot voltages are not increased, and signal delay is less, it is ensured that
The backfeed loop normal work of IGBT device drive module within the of short duration turn-off time.The present invention is with strong applicability, can drive
Multiple electronic power switch devices.
Further, the detection module includes：Resistance R and electric capacity C；One end of electric capacity C is used as the detection module
Input, the output end of the other end of the electric capacity C as the detection module, one end of the resistance R are connected to described
The other end of electric capacity C, the other end ground connection of the resistance R.
Further, when the input voltage differential value of comparison module is more than default voltage reference value, comparison module
Logic control module triggering feedback is outputed enable signal to, the output current that electric current drives is controlled by Logic control module
System, reduce reverse drive electric current size with reach control voltage overshoot purpose.
Further, default voltage reference value is between 0～Vdd, usually Vdd/2, and Vdd is supply voltage.
Further, the electric current drive module includes：N positive charge current unit and m back discharge electric current
Unit, positive charge current unit are used for providing positive charge electric current for IGBT grids；Back discharge current unit is used for
IGBT grids provide back discharge electric current；M, n are positive integer, and m is less than n.
Further, the electric current drive module includes：N back discharge current driver unit, for for IGBT grid
Pole provides back discharge electric current；N is positive integer.
Present invention also offers a kind of IGBT device driving method for reducing switching loss, comprises the steps：
(1) the voltage derivative value in Real-time Collection IGBT turn off process；
(2) the voltage derivative value of collection and default reference voltage are compared, and comparative result is exported；
(3) signal is selected to carry out the working condition of control electric current drive module after logical operation comparative result and digit order number,
And in IGBT turn off process, provide size controllable driving current.
In the present invention, IGBT device turn off process is divided into three phases to be controlled：First stage uses big grid
Electrode current (electric current drives more than the 70% of full-load current) accelerates the turn-off speed of IGBT device.Two scheme of second stage then slightly has
Difference, when the reference value that voltage derivative value exceedes set by comparison module is detected, for scheme one, Logic control module will
Control electric current drive module opens a forward current driver element (wherein a≤n selects signal control by digit order number), reduces voltage
The spike for overcharging, selects the charging current of the different inputs of signal also different, in some instances it may even be possible at short notice according to the digit order number for setting
Device grids are charged, therefore n is bigger than m；For scheme two, control electric current drive module is closed by Logic control module
A current driver unit, slows down the shut-off of device.Phase III, when the voltage derivative value for detecting is less than preset reference value,
Due to voltage spikes mistake after one section of backfeed loop inherent delay, closes forward current driver element, is continuing with high current
Discharged, so as to accelerate turn-off speed, reduced switching loss.
Further, when voltage derivative value is more than preset reference value, the enable signal of comparator output causes logic
Control module opens positive charge current driver unit to reduce the discharge current of IGBT device grid, slows down IGBT device two ends
The trend that voltage rises, reduces voltage overshoot；When voltage derivative value is again less than preset reference value, backfeed loop is closed, this
When forward drive current module be also accordingly turned off, device is continuing with heavy-current discharge, realizes rapidly switching off.
Further, default voltage reference value generally can be set to Vdd/2 between 0～supply voltage (Vdd), if
Surely less be fed into more early, setting is fed into more greatly more late.
In the present invention, design modules when, by selecting the raceway groove provided in chip foundries making technology storehouse
The little transistor of wide length (transistor parameter in different process storehouse is different), and carried out analogue simulation to circuit delay, can be real
The delay of whole backfeed loop is strictly controlled in below 20ns while existing circuit function.
By the contemplated above technical scheme of the present invention, compared with prior art, due to introducing feedback control, can
Device turn-off speed is speeded while voltage overshoot is not increased, and reduces device turn-off power loss.Overall delay is less than 20ns, it is ensured that
Can come into force in of short duration IGBT device turn off process in overall feedback loop.
Description of the drawings
Fig. 1 is the theory diagram of the IGBT device drive circuit for reducing and closing loss provided in an embodiment of the present invention；
Fig. 2 is voltage derivative value detection in the IGBT device drive circuit for reducing and close loss provided in an embodiment of the present invention
The physical circuit figure of module；
Fig. 3 is electric current drive module in the IGBT device drive circuit for reducing and close loss provided in an embodiment of the present invention
A kind of structural representation；
Fig. 4 is electric current drive module in the IGBT device drive circuit for reducing and close loss provided in an embodiment of the present invention
Another kind of structural representation；
Fig. 5 is the structure of comparison module in the IGBT device drive circuit for reducing and close loss provided in an embodiment of the present invention
Schematic diagram；
Fig. 6 is logic control and protection in the IGBT device drive circuit for reducing and close loss provided in an embodiment of the present invention
A kind of structural representation of the embodiment of module；
Fig. 7 is logic control and protection in the IGBT device drive circuit for reducing and close loss provided in an embodiment of the present invention
The structural representation of another kind of embodiment of module；
Fig. 8 is that theoretical work waveform shows in the IGBT device drive circuit for reducing and close loss provided in an embodiment of the present invention
It is intended to.
Specific embodiment
In order that the objects, technical solutions and advantages of the present invention become more apparent, below in conjunction with drawings and Examples, right
The present invention is further elaborated.It should be appreciated that specific embodiment described herein is only in order to explain the present invention, and
It is not used in the restriction present invention.
In order to solve the problems, such as that conventional open-loop drive circuit cannot be while take into account turn-off power loss with voltage overshoot when turning off, sheet
Invention devises the IGBT drive schemes of a set of closed-loop control, by the voltage derivative value of real-time sampling IGBT device, then through control
Molding block carries out closed-loop control to grid current drive module.The IGBT device of the reduction switching loss that the present invention is provided drives electricity
Road, can turn off in dynamic process in IGBT reduces the purpose of turn-off power loss to the control realization of gate drive current.
The IGBT device drive circuit of the reduction switching loss that the present invention is provided includes：Detection module, electric current drive module,
Comparison module and Logic control module；The input of Logic control module is used for pulse-width signal and the digit order number for connecting outside
Signal, the feedback end of Logic control module is selected to connect the output end of comparison module, the input of electric current drive module is connected to patrols
The output end of volume control module, the output end of electric current drive module are used for the control end for connecting IGBT device, detection module defeated
Enter end for being connected to the output end of IGBT device, the output end of detection module is connected to the input of comparison module.
Logic control module is from the outside switch for accessing pulse-width signal (PWM) control electric current drive module, and then controls
IGBT device processed is switched on and off；Using the voltage derivative value in detection module real-time sampling IGBT turn off process, by than
The voltage of collection is compared with default reference voltage compared with module, outputs control signals to Logic control module.Logic control
Digit order number can be input into selects signal to molding block simultaneously, and two signals co- controlling electric current after Logic control module process drives mould
The working condition of block.Electric current drive module then can provide big I according to the output of Logic control module in IGBT turn off process
The driving current of control.
In embodiments of the present invention, detection module includes：Resistance R and electric capacity C, one end of electric capacity C is used as detection module
Input is connected to the drain electrode of IGBT device, the output end of the other end of electric capacity C as detection module, one end connection of resistance R
To the other end of electric capacity C, the other end of resistance R is grounded.Voltage value on resistance R is the voltage derivative value of IGBT device.
In embodiments of the present invention, comparison module is then defeated when the voltage derivative value of input is more than default voltage reference value
Go out to enable (enable) signal to Logic control module triggering feedback, the output current that electric current drives is entered by Logic control module
Row control, reduce reverse drive electric current size with reach control voltage overshoot purpose.And when the voltage of collection is less than default
Reference voltage when, comparison module output disabling (disable) signal do not trigger feedback to Logic control module, make electric current driving
Module continues to output reverse drive high current (more than the 70% of IGBT device maximum permissible current).Comparison module preset reference value
Can be adjusted according to the needs of control, its value generally can be set to Vdd/2 between 0～supply voltage (Vdd), be set to get over
It is more early that little feedback is triggered, and the bigger of setting feeds back the more late of triggering.
In embodiments of the present invention, electric current drive module includes：N identical positive charge current unit is identical with m
Back discharge current unit, m, n are positive integer, and n is more than m；Each current driver unit is provided for IGBT grids
The positive charge of 100mA or back discharge electric current, and the control of module controlled by logic.
In embodiments of the present invention, a current driver unit is made up of metal-oxide-semiconductor, and metal-oxide-semiconductor grid is the input of control
And the saturation current I of metal-oxide-semiconductorDsatIt is the electric current of current driver unit offer.
And used as an alternative embodiment of the invention, electric current drive module includes：N identical back discharge electric current drives
Unit.
In embodiments of the present invention, Logic control module is provided with n+m corresponding with electric current drive module or n output
Port, controls the working condition of each current driver unit respectively, and digit order number selects signal control feedback to be turned on and off when coming into force
Current unit number, and then change feedback when change electric current size.If such as digit order number selects the binary number table of signal
When showing that metric 10 feedbacks come into force, 10 current units of control are turned on and off.
In embodiments of the present invention, above-described modules all select in technology library the short and narrow transistor of raceway groove with
Realize the low delay (technology library is provided) in overall feedback loop by chip foundries, make the delays time to control of backfeed loop 20ns with
Under, to realize realizing closed-loop control within the IGBT of short duration turn-off times.
Reduce the IGBT device drive circuit of switching loss in order to further description is provided in an embodiment of the present invention, under
Specific embodiment in the face of the present invention is described further：
Fig. 1 is the theory diagram of the present invention, including：Detection module, comparison module, Logic control module and electric current drive mould
Block；The voltage change of detection module real-time detection IGBT device obtains voltage derivative value, and be inputted in comparison module with pre-
If reference value be compared.When the device is switched off, due to factors such as stray inductances, the voltage at IGBT two ends can rise rapidly,
Now voltage derivative value also can rise accordingly, when the voltage derivative value for detecting is more than the preset reference value of comparison module,
Comparison module will activate backfeed loop, and Logic control module be according to digit order number to Logic control module output control signal
Signal and the control signal control electric current of comparison module is selected to drive reduction gate discharge current.And the voltage derivative value of working as device is little
When reference value, then backfeed loop is not turned on.
Physical circuit figures of the Fig. 2 for the detection module of embodiment of the present invention body, detection module include：Resistance R and electric capacity
One end of C, electric capacity C is connected to the drain electrode of IGBT device as the input of detection module, and the other end of electric capacity C is used as detection mould
The output end of block, one end of resistance R are connected to the other end of electric capacity C, the other end ground connection of resistance R.Voltage value on resistance R
The voltage derivative value of as IGBT device.
The electric current drive module structure chart that Fig. 3 is provided for first embodiment of the invention (scheme one), electric current drive module point
For n positive charge current driver unit and m back discharge current driver unit, receive the control of Logic control module.?
First stage, only opening back discharge current driver unit carries out heavy-current discharge.Second stage, when voltage derivative value is more than pre-
If during reference value, Logic control module will receive enable (enable) signal of comparator output, now Logic control module
Positive charge current driver unit will be opened and reduce gate discharge current, and be slowed down the trend of device both end voltage rising, reduce electricity
Press through punching.If voltage rises quickly, or even need to carry out short time charging to grid, therefore positive charge current driver unit
Number n should be more than the number m of back discharge current driver unit.Phase III, when voltage derivative value is again less than comparing mould
During the preset reference value of block, backfeed loop is closed, and now forward drive current module is also accordingly turned off, and device is continuing with big electricity
Electricity is banished, realizes rapidly switching off.
Fig. 4 is the electric current drive module structure chart that provides of second embodiment of the invention (scheme two), different from scheme one it
Place is that it eliminates positive charge current driver unit, only electric by closing part back discharge in the second stage of turn off process
Stream driver element slows down the voltage at device two ends when device is turned off and rises.Compared with scheme one, the structure of scheme two is more simplified, control
System is also simpler, but scheme two cannot be by suppressing overshoot to gate charges when voltage overshoot is very big, and therefore scheme two is suitable for
Property be not so good as scheme one.
Fig. 5 is the comparison module structure chart of the present invention, defeated when the voltage derivative value of input is more than predeterminated voltage reference value
Go out to enable (enable) signal to Logic control module, otherwise output disabling (disable) signal.
Logic control module schematic diagrames of the Fig. 6 for the present invention program one, has n+m output of 3 groups of inputs, each output end
Mouth all connects a current driver unit, realizes the precise control of grid current.
Logic control module schematic diagrames of the Fig. 7 for the present invention program two, has n output of 3 groups of inputs.
Fig. 8 is the theoretical work oscillogram of the present invention, as the first stage adopts heavy-current discharge, therefore device two ends
The conventional drive scheme of voltage ratio rises faster, and opens forward current driver element in second stage and reduce discharge current, can
Voltage overshoot is made to be not more than traditional drive scheme.Continue to adopt heavy-current discharge in the phase III, device is turned off rapidly.Can
To see, the IGBT device driven using this programme reduces turn-off time and loss in the case where overshoot voltage does not increase,
Solve the problems, such as that the two can not be while take into account in the past.
As it will be easily appreciated by one skilled in the art that the foregoing is only presently preferred embodiments of the present invention, not in order to
The present invention, all any modification, equivalent and improvement that is made within the spirit and principles in the present invention etc. is limited, all should be included
Within protection scope of the present invention.
Claims (10)
1. a kind of reduce switching loss IGBT device drive circuit, it is characterised in that include：Detection module, electric current drive mould
Block, comparison module and Logic control module；
The input of the Logic control module is used for connecting the pulse-width signal of outside and digit order number selects signal, the logic
The feedback end of control module connects the output end of the comparison module, and the input of the electric current drive module is connected to described patrolling
The output end of control module is collected, the output end of the electric current drive module is used for the control end for connecting IGBT device, the detection
The input of module is used for the output end for being connected to IGBT device, and the output end of the detection module is connected to the comparison module
Input.
2. IGBT device drive circuit as claimed in claim 1, it is characterised in that during work, Logic control module is from outside
The switch of pulse-width signal control electric current drive module is accessed, and then controls being switched on and off for IGBT device；By detection
Voltage derivative value in module real-time sampling IGBT turn off process, will be electric to the voltage for gathering and default reference by comparison module
Pressure is compared, and outputs control signals to Logic control module；Digit order number can be input into selects signal to Logic control module simultaneously, and two
The working condition of individual signal co- controlling electric current drive module after Logic control module process；Electric current drive module is according to logic
The output of control module provides size controllable driving current in IGBT turn off process.
3. IGBT device drive circuit as claimed in claim 1 or 2, it is characterised in that the detection module includes：Resistance R
With electric capacity C；
Input of the one end of the electric capacity C as the detection module, the other end of the electric capacity C is used as the detection module
Output end, one end of the resistance R is connected to the other end of the electric capacity C, the other end ground connection of the resistance R.
4. the IGBT device drive circuit as described in any one of claim 1-3, it is characterised in that when the input electricity of comparison module
When pressure differential value is more than default voltage reference value, comparison module outputs enable signal to Logic control module triggering feedback, by
Logic control module is controlled to the output current that electric current drives, and reduces the size of reverse drive electric current reaching control voltage
The purpose of overshoot.
5. IGBT device drive circuit as claimed in claim 4, it is characterised in that default voltage reference value 0～Vdd it
Between, usually Vdd/2, Vdd is supply voltage.
6. the IGBT device drive circuit as described in any one of claim 1-5, it is characterised in that the electric current drive module bag
Include：N positive charge current unit and m back discharge current unit, positive charge current unit are used for carrying for IGBT grids
For positive charge electric current；Back discharge current unit is used for providing back discharge electric current for IGBT grids；M, n are positive integer,
And m is less than n.
7. the IGBT device drive circuit as described in any one of claim 1-5, it is characterised in that the electric current drive module bag
Include：N back discharge current driver unit, for providing back discharge electric current for IGBT grids；N is positive integer.
8. a kind of reduce switching loss IGBT device driving method, it is characterised in that comprise the steps：
(1) the voltage derivative value in Real-time Collection IGBT turn off process；
(2) the voltage derivative value of collection and default reference voltage are compared, and comparative result is exported；
(3) signal is selected to carry out the working condition of control electric current drive module after logical operation comparative result and digit order number, and
There is provided size controllable driving current in IGBT turn off process.
9. IGBT device driving method as claimed in claim 8, it is characterised in that when voltage derivative value is more than preset reference value
When, the enable signal of comparator output causes Logic control module to open positive charge current driver unit to reduce IGBT device
The discharge current of grid, slows down the trend of IGBT device both end voltage rising, reduces voltage overshoot；When voltage derivative value little again
When preset reference value, backfeed loop is closed, and now forward drive current module is also accordingly turned off, and device is continuing with high current
Electric discharge, realizes rapidly switching off.
10. IGBT device driving method as claimed in claim 8, it is characterised in that default voltage reference value is in 0～Vdd
Between, usually Vdd/2, Vdd is supply voltage.
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| CN201611004739.5A CN106505839A (en) | 2016-11-15 | 2016-11-15 | A kind of IGBT device drive circuit and method for reducing closing loss |
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| CN201611004739.5A CN106505839A (en) | 2016-11-15 | 2016-11-15 | A kind of IGBT device drive circuit and method for reducing closing loss |
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| CN113497440A (en) * | 2020-03-19 | 2021-10-12 | 广州汽车集团股份有限公司 | IGBT drive circuit and motor controller |
| CN116647219A (en) * | 2023-04-27 | 2023-08-25 | 北京芯可鉴科技有限公司 | IGBT driving circuit, method for driving IGBT and chip |
| CN116865536A (en) * | 2023-09-05 | 2023-10-10 | 深圳市力生美半导体股份有限公司 | Rate control method, rate control system, and computer-readable storage medium |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013138219A1 (en) * | 2012-03-12 | 2013-09-19 | Board Of Trustees Of Michigan State University | High efficiency gate drive circuit for power transistors |
| US20140015571A1 (en) * | 2012-07-13 | 2014-01-16 | General Electric Company | Systems and methods for regulating semiconductor devices |
| CN104378097A (en) * | 2014-09-29 | 2015-02-25 | 株洲变流技术国家工程研究中心有限公司 | Drive system and method of insulated gate bipolar transistor |
| CN105429441A (en) * | 2015-12-31 | 2016-03-23 | 童乔凌 | IGBT (Insulated Gate Bipolar Transistor) closed loop active driving circuit and driving method thereof |
| CN105429440A (en) * | 2015-12-23 | 2016-03-23 | 西安理工大学 | High-power IGBT driving circuit capable of automatically tracking and controlling switching process |
-
2016
- 2016-11-15 CN CN201611004739.5A patent/CN106505839A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013138219A1 (en) * | 2012-03-12 | 2013-09-19 | Board Of Trustees Of Michigan State University | High efficiency gate drive circuit for power transistors |
| US20140015571A1 (en) * | 2012-07-13 | 2014-01-16 | General Electric Company | Systems and methods for regulating semiconductor devices |
| CN104378097A (en) * | 2014-09-29 | 2015-02-25 | 株洲变流技术国家工程研究中心有限公司 | Drive system and method of insulated gate bipolar transistor |
| CN105429440A (en) * | 2015-12-23 | 2016-03-23 | 西安理工大学 | High-power IGBT driving circuit capable of automatically tracking and controlling switching process |
| CN105429441A (en) * | 2015-12-31 | 2016-03-23 | 童乔凌 | IGBT (Insulated Gate Bipolar Transistor) closed loop active driving circuit and driving method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 宁红英 等: ""一种基于dic/dt反馈控制的大功率IGBT驱动保护方法"", 《电工技术学报》 * |
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| CN107453593A (en) * | 2017-08-18 | 2017-12-08 | 杰华特微电子（杭州）有限公司 | A kind of switch tube driving circuit and its driving method |
| CN109951058A (en) * | 2017-12-21 | 2019-06-28 | 维谛公司 | A kind of method and device for the switching loss reducing switching tube |
| CN108322200B (en) * | 2018-02-26 | 2021-09-14 | 武汉英弗耐斯电子科技有限公司 | Drive circuit for driving power switch device |
| CN108322200A (en) * | 2018-02-26 | 2018-07-24 | 武汉英弗耐斯电子科技有限公司 | A kind of driving circuit for driving power switching device |
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| CN112702045A (en) * | 2019-10-23 | 2021-04-23 | 北京比特大陆科技有限公司 | Switching circuit and control method thereof |
| CN113497440A (en) * | 2020-03-19 | 2021-10-12 | 广州汽车集团股份有限公司 | IGBT drive circuit and motor controller |
| CN111404526B (en) * | 2020-03-19 | 2021-12-03 | 华中科技大学 | Programmable high-precision dynamic GaN driving circuit and application thereof |
| CN111404526A (en) * | 2020-03-19 | 2020-07-10 | 华中科技大学 | Programmable high-precision dynamic GaN driving circuit and application thereof |
| CN116647219A (en) * | 2023-04-27 | 2023-08-25 | 北京芯可鉴科技有限公司 | IGBT driving circuit, method for driving IGBT and chip |
| CN116865536A (en) * | 2023-09-05 | 2023-10-10 | 深圳市力生美半导体股份有限公司 | Rate control method, rate control system, and computer-readable storage medium |
| CN116865536B (en) * | 2023-09-05 | 2023-12-15 | 深圳市力生美半导体股份有限公司 | Rate control method, rate control system, and computer-readable storage medium |
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