CN113451995B - Short circuit and overcurrent protection device and method - Google Patents
Short circuit and overcurrent protection device and method Download PDFInfo
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- CN113451995B CN113451995B CN202111008042.6A CN202111008042A CN113451995B CN 113451995 B CN113451995 B CN 113451995B CN 202111008042 A CN202111008042 A CN 202111008042A CN 113451995 B CN113451995 B CN 113451995B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
- H02H7/205—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment for controlled semi-conductors which are not included in a specific circuit arrangement
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H1/00—Details of emergency protective circuit arrangements
- H02H1/0007—Details of emergency protective circuit arrangements concerning the detecting means
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
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- General Physics & Mathematics (AREA)
- Emergency Protection Circuit Devices (AREA)
Abstract
The application discloses short circuit and overcurrent protection device includes: a detection circuit for detecting an absolute value of the magnetic field; for N preset switching tubes in the protected circuit, if the forward currents flowing through the N switching tubes are the same, the magnetic field vectors generated by the switching tubes at the detection position of the detection circuit are the same, and N is a positive integer not less than 2; and the turn-off circuit is connected with the detection circuit and used for turning off at least one switching tube in the N switching tubes when the absolute value of the magnetic field detected by the detection circuit reaches a preset magnetic field intensity threshold value. By applying the scheme of the application, short circuit and overcurrent protection of the switching tube can be realized rapidly and accurately at low cost, and the short circuit protection device has certain predictability on the short circuit condition and can play a role in carrying out short circuit protection in advance. The application also discloses a short circuit and overcurrent protection method which has corresponding technical effects.
Description
Technical Field
The invention relates to the technical field of circuits, in particular to a short-circuit and overcurrent protection device and method.
Background
Reliable short circuit and overcurrent protection are critical to the reliability of power electronics. Particularly, compared with a Si IGBT (Silicon Insulated Gate Bipolar Transistor), a SiC MOSFET (Silicon Carbide Metal-Oxide-Semiconductor Field Effect Transistor) has a much higher short-circuit current rise rate and peak value, so that the short-circuit current can be carried for a shorter time, and a fast and accurate short-circuit protection is required. The short circuit and overcurrent protection is mainly realized by two steps, namely: and detecting the short circuit or overcurrent of the device, thereby sending out a fault signal. The second step is that: the shutdown circuit, which receives the fault signal, safely and reliably shuts down the device.
Various schemes are proposed at home and abroad aiming at the first step in short circuit and overcurrent protection of the SiC MOSFET, and one of the simplest methods is to convert current into a voltage signal by using the ohm's law. However, since a sampling resistor needs to be inserted into the power loop of the SiC MOSFET, loss and loop inductance increase, and thus, the SiC MOSFET is not suitable for use in high-voltage high-power applications. Rogowski coils are a classical current detection method based on faraday's law, and the inductive part of the loop structure may contain hundreds of turns of air coils through which a charged conductor passes to form mutual inductance. The conductor current induces a voltage in the ring structure, and the alternating component of the current can be obtained after integration. However, the offset voltage and current generally exist in the operational amplifier in the integrator, which may cause the output of the integrator to drift and even saturate, and in order to solve the problem, a high-performance operational amplifier needs to be adopted, and a correction circuit and a reset switch are added and are debugged one by one, which all increase the cost and complexity of the rogowski coil technology. Faraday's law of electromagnetic induction can also be used to measure current. A typical method is to use the RC integral circuit shown in FIG. 1 to make Kelvin inductance
Information is converted into voltage, will
The short-circuit fault can be judged by comparing with the threshold value, but for the overcurrent fault with slow change, the detection time is obviously prolonged, even the overcurrent fault cannot be detected. The SiC MOSFET chip integrated with the Sense electrode can specially use part of unit cells for current detectionBut the cost is high and the universality is not achieved.
In summary, how to implement short circuit and overcurrent protection of the switching tube quickly and accurately at low cost is a technical problem that needs to be solved urgently by those skilled in the art.
Disclosure of Invention
The invention aims to provide a short-circuit and overcurrent protection device and a short-circuit and overcurrent protection method, which can quickly and accurately realize short-circuit and overcurrent protection of a switch tube at low cost.
In order to solve the technical problems, the invention provides the following technical scheme:
a short circuit and overcurrent protection device comprising:
a detection circuit for detecting an absolute value of the magnetic field; for N preset switching tubes in a protected circuit, if forward currents flowing through the N switching tubes are the same, magnetic field vectors generated by the switching tubes at the detection position of the detection circuit are the same, and N is a positive integer not less than 2;
and the turn-off circuit is connected with the detection circuit and used for turning off at least one of the N switch tubes when the absolute value of the magnetic field detected by the detection circuit reaches a preset magnetic field intensity threshold value.
Preferably, the value of N is 2, and the preset 2 switching tubes are an upper switching tube and a lower switching tube in the same bridge arm.
Preferably, the shutdown circuit is specifically configured to:
when the absolute value of the magnetic field detected by the detection circuit reaches a preset magnetic field intensity threshold value, at least one of the N switch tubes is turned off in a two-level turn-off mode.
Preferably, the shutdown circuit includes: n shut off the unit for carrying on the on-off control of N switch tubes respectively, and each shut off in the unit all include:
the charging trigger circuit is connected with the detection circuit at the input end and used for charging the first capacitor and conducting the first switch unit when the absolute value of the magnetic field detected by the detection circuit reaches a preset magnetic field intensity threshold value;
the first end of the first resistor is connected with the control end of the driving circuit and the second end of the first capacitor respectively, and the second end of the first resistor is connected with the output end of the charging trigger circuit and the control end of the first switch unit respectively;
the first capacitor with a first end grounded;
the first switch unit is connected with the output end of the driving circuit at the first end and connected with the output end of the clamping circuit at the second end;
the clamping circuit is used for clamping the voltage at the control end of the switching tube which is controlled by the turn-off unit to be on and off into a preset intermediate voltage when the first switching unit is switched on;
the output end of the drive circuit is connected with the control end of the switch tube which is controlled by the turn-off unit to be turned on and off;
the intermediate voltage is lower than the driving voltage output by the output end of the driving circuit; when the voltage of the control end of the driving circuit does not reach the preset saturation voltage, the output end of the driving circuit outputs the driving voltage, and when the voltage of the control end of the driving circuit reaches the saturation voltage, the output end of the driving circuit is connected with the preset low level.
Preferably, the clamp circuit includes:
a second resistor having a first end connected to the positive electrode of the first power supply and the first end of the second capacitor, a second end connected to the negative electrode of the first zener diode, the second end of the second capacitor and the first end of the third capacitor, and the second end of the second resistor serving as the output end of the clamp circuit;
the second capacitor;
the third capacitor;
and the second end of the third capacitor at the anode is connected, and the connection end of the first voltage stabilizing diode is grounded.
Preferably, the method further comprises the following steps:
and the anode of the second voltage stabilizing diode is connected with the first end of the first capacitor, and the cathode of the second voltage stabilizing diode is connected with the second end of the first capacitor.
Preferably, the method further comprises the following steps:
and the anode of the first diode is connected with the output end of the driving circuit, and the cathode of the first diode is connected with the first end of the first switch unit.
Preferably, the charging trigger circuit includes:
the comparator is used for outputting a fault signal when the voltage received by the positive input end is higher than the reference voltage;
the monostable trigger is connected with the output end of the comparator at the input end and is used for prolonging the fault signal for a first time length;
the input end of the buffer is connected with the output end of the monostable trigger and used for driving the buffer of the optical coupler when receiving a fault signal output by the monostable trigger;
the input end of the optical coupler is connected with the buffer, and the output end of the optical coupler is used as the output end of the charging trigger circuit and used for charging the first capacitor and enabling the first switch unit to be conducted when the optical coupler is driven by the buffer.
Preferably, the detection circuit is a TMR detection circuit.
A short circuit and overcurrent protection method is applied to any one of the short circuit and overcurrent protection devices, and comprises the following steps:
the detection circuit detects the absolute value of the magnetic field; for N preset switching tubes in a protected circuit, if forward currents flowing through the N switching tubes are the same, magnetic field vectors generated by the switching tubes at the detection position of the detection circuit are the same, and N is a positive integer not less than 2;
when the absolute value of the magnetic field detected by the detection circuit reaches a preset magnetic field intensity threshold value, the turn-off circuit turns off at least one of the N switch tubes.
The technical solution provided by the embodiment of the present invention is applied, the absolute value of the magnetic field at the detection position is detected by the detection circuit, and the applicant considers that, if the absolute value of the magnetic field generated by a certain switch tube at the detection position is detected by the detection circuit, the switch tube is easily interfered by an adjacent magnetic field, so in the solution of the present application, a specific detection position is selected instead of detecting the absolute value of the magnetic field at the detection position by the detection circuit, and when the detection circuit is located at the specific detection position, for N preset switch tubes in the protected circuit, if forward currents flowing through the N switch tubes are the same, magnetic field vectors generated by the switch tubes at the detection position of the detection circuit are the same. Therefore, in these N switch tubes, when 1 arbitrary switch tube overflows, when the magnetic field absolute value that detection circuitry detected just can reach preset magnetic field intensity threshold value, thereby the turn-off circuit can turn off at least one switch tube in N switch tubes, and the scheme of this application can realize the overcurrent protection of these N switch tubes effectively promptly. If a short circuit occurs, for example, an upper tube and a lower tube which form the same bridge arm in the N switching tubes are simultaneously conducted to cause a short circuit, and magnetic field vectors generated by the switching tubes at the detection position of the detection circuit are the same, so that as long as the current of the two short-circuited switching tubes reaches half of an overcurrent value, the absolute value of the magnetic field detected by the detection circuit reaches a preset magnetic field intensity threshold, and therefore, short circuit protection can be realized, and a function of predicting the short circuit in advance to a certain extent is also achieved. In addition, the over-current and short-circuit conditions can be immediately reflected on the magnetic field, so that the scheme of the application can quickly realize short-circuit and over-current protection. Moreover, the absolute value of the magnetic field detected by the detection circuit of the present application is the result of the combined action of the N switching tubes, so that the above-described situation of being interfered does not occur, that is, the present application is equivalent to converting an interference signal into a useful signal. In addition, the detection circuit for detecting the absolute value of the magnetic field is non-contact detection, so that the defects of loss increase, loop inductance and the like caused by traditional detection based on sampling resistance can be avoided, the detection circuit is simple in structure, and high-performance operational amplifier is not required, so that the cost and the complexity of the scheme of the application can be reduced.
To sum up, the scheme of the application can realize short circuit and overcurrent protection of the switching tube rapidly and accurately with low cost, has certain predictability for the short circuit condition, and can play the role of short circuit protection in advance.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a conventional Kelvin inductor based short circuit detection circuit;
FIG. 2 is a schematic diagram of a short circuit and overcurrent protection apparatus according to the present invention;
FIG. 3 is a schematic diagram of a TMR detection circuit according to an embodiment of the present invention;
FIG. 4a is a schematic diagram of a conventional SiC MOSFET module after de-encasing;
FIG. 4b is a schematic diagram of the magnetic field generated by the current flowing through the upper and lower switch tubes of the same bridge arm in one embodiment of the present invention;
FIG. 4c shows the current and magnetic field distribution when the upper switch tube is over-current in one embodiment of the present invention;
FIG. 4d is a graph showing the current and magnetic field distribution during an overcurrent condition in the lower switch tube in one embodiment of the present invention;
FIG. 4e is a graph showing the distribution of current and magnetic field when a through short occurs in the same bridge arm in one embodiment of the present invention;
FIG. 5 is a schematic diagram of a short circuit and overcurrent protection apparatus according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a short circuit and overcurrent protection device in accordance with another embodiment of the present invention;
fig. 7 is a schematic diagram of a clamp circuit according to an embodiment of the invention.
Detailed Description
The core of the invention is to provide a short-circuit and overcurrent protection device, which can quickly and accurately realize short-circuit and overcurrent protection of a switch tube at low cost, has certain predictability on the short-circuit condition and can play a role in carrying out short-circuit protection in advance.
In order that those skilled in the art will better understand the disclosure, the invention will be described in further detail with reference to the accompanying drawings and specific embodiments. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 2, fig. 2 is a schematic structural diagram of a short-circuit and overcurrent protection apparatus according to the present invention, where the short-circuit and overcurrent protection apparatus may include:
a detection circuit 10 for detecting an absolute value of the magnetic field; for N preset switching tubes in the protected circuit, if the forward currents flowing through the N switching tubes are the same, the magnetic field vectors generated by the switching tubes at the detection position of the detection circuit 10 are the same, and N is a positive integer not less than 2;
and the turn-off circuit 20 is connected with the detection circuit 10 and is used for turning off at least one of the N switching tubes when the absolute value of the magnetic field detected by the detection circuit 10 reaches a preset magnetic field strength threshold value.
In the scheme of this application, can utilize detection circuitry 10 and turn-off circuit 20 to realize the short circuit and the overcurrent protection of N switching tubes of predetermineeing, the specific type of N switching tubes of predetermineeing can be set for and adjust according to actual need, because SiC MOSFET can bear the time for short-circuit current shorter, and SiC MOSFET's requirement is higher promptly, consequently, this application can be used for realizing SiC MOSFET's protection usually. Of course, for switching devices such as common Si MOSFETs and IGBTs, short-circuit and overcurrent protection can be realized by using the scheme of the present application. Hereinafter, the present application will be described by taking SiC MOSFETs as examples of the preset N switching transistors.
The accurate detection of the current flowing through the SiC MOSFET is a key to reliably and quickly perform short circuit and overcurrent protection of the SiC MOSFET, and therefore, in the scheme of the application, the detection circuit 10 detects the absolute value of the magnetic field at the detection position, and the absolute value of the magnetic field at the detection position can quickly reflect the current condition flowing through the SiC MOSFET. In addition, the detection circuit 10 for detecting the absolute value of the magnetic field has a simple structure, and does not require a high-performance operational amplifier, so that the cost and the complexity of the scheme of the application are favorably reduced.
The detection circuit 10 is used to detect the absolute value of the magnetic field, and the specific circuit configuration can be set and adjusted as necessary as long as the object of the present application can be achieved. For example, in an embodiment of the present invention, the detection circuit 10 may be a TMR (tunneling Magneto Resistance) detection circuit, which has a simple structure and is convenient to implement.
For example, fig. 3 is a schematic diagram of a TMR detection circuit 10 in an embodiment, which can detect an absolute value B of magnetic field strength at a detection position, the TMR detection circuit 10 may be integrated as a TMR chip, for example, as shown in fig. 4c to 4e, the TMR detection circuit 10 is denoted as a TMR IC. In fig. 3, the TMR detection circuit 10 includes 4 TMRs and forms a bridge structure, the voltage difference between V + and V-in fig. 3 is linear with the magnitude of the surrounding magnetic field, i.e. the difference between V + and V-reflects the magnitude of the magnetic field at the measurement position, and after the differential amplification and voltage boosting in fig. 3, it can be used as the output of the detection circuit 10 for realizing the subsequent protection.
However, it is considered that if only the TMR module is used to detect the absolute value of the magnetic field generated by a certain switch tube at the detection position, it is easily interfered by the adjacent magnetic field, and mainly the magnetic field generated by other switch tubes near the switch tube interferes, so the present application sets the detection circuit 10 at a specific detection position where the vectors of the magnetic fields generated by the switch tubes at the detection position of the detection circuit 10 are the same if the forward currents flowing through the N switch tubes are the same for the preset N switch tubes in the protected circuit, so that the absolute value of the magnetic field detected by the detection circuit 10 of the present application is the result of the common action of the N switch tubes, that is, the interference signal is converted into a useful signal.
For ease of understanding, N =2 is taken as an example for illustration, and in practical applications, a more common way is: the value of N is 2, and the 2 preset switching tubes are an upper switching tube and a lower switching tube in the same bridge arm.
In this embodiment, N =2 is provided in consideration that the interference most significant to the magnetic field generated by the upper switch tube of any bridge arm comes from the lower switch tube of that bridge arm, and similarly, the interference most significant to the magnetic field generated by the lower switch tube of that bridge arm comes from the upper switch tube of that bridge arm, and these 2 switch tubes are the upper switch tube and the lower switch tube in the same bridge arm.
Referring to fig. 4a, a schematic diagram of a conventional SiC MOSFET module after de-encasing, the module structure is general. As shown in fig. 4a, terminal 1 and terminal 3 in the module are adjacent and pass the upper and lower switch tube currents, respectively.
Referring to fig. 4b, the magnetic field generated by the current flowing through the upper switch tube and the lower switch tube of the same bridge arm in a specific case is shown schematically. When a forward current flows through the upper or lower switch tube, the magnetic field generated by the forward current flowing through the terminal 1 and the magnetic field generated by the forward current flowing through the terminal 3 are in the same direction between the terminals 1 and 3. Therefore, between the terminals 1 and 3 in fig. 4b, there is a certain position, so that when the forward currents of the same magnitude flow through the upper switch tube and the lower switch tube, the magnetic field generated by the forward current flowing through the terminal 1 and the magnetic field generated by the forward current flowing through the terminal 3 are the same in direction and magnitude at this position, that is, the magnetic field vectors generated at this position are the same.
Therefore, by placing the detection circuit 10 (taking the TMR detection circuit 10 as an example) at this specified detection position, the current flowing through the upper switching tube or the current flowing through the lower switching tube can be equally detected by the TMR detection circuit 10.
Referring to fig. 4c and 4d, fig. 4c shows the distribution of current and magnetic field when the upper switch tube is overcurrent, and fig. 4d shows the distribution of current and magnetic field when the lower switch tube is overcurrent.
It can be seen that if the upper switch tube is turned on and flowing a forward current, the lower switch tube is turned off, and at this time, the absolute value of the magnetic field intensity detected by the TMR detection circuit 10, that is, the absolute value of the magnetic field intensity generated by the current of the upper switch tube at the detection position, that is, the TMR detection circuit 10 only detects the current of the upper switch tube at this time, and if the current of the upper switch tube reaches a preset overcurrent threshold value
Then the magnetic field intensity detected by the TMR detection circuit 10 can reach the preset magnetic field intensity threshold value
。
Correspondingly, if the lower switch tube is conducted to flow forward current, the upper switch tube is turned off, at this moment, the absolute value of the magnetic field intensity detected by the TMR detection circuit 10, namely the absolute value of the magnetic field intensity generated by the current of the lower switch tube at the detection position, namely, the TMR detection circuit 10 only detects the current of the lower switch tube at this moment, and if the current of the lower switch tube reaches the preset overcurrent threshold value
Then the magnetic field intensity detected by the TMR detection circuit 10 can reach the preset magnetic field intensity threshold value
。
Referring to fig. 4e, the distribution of current and magnetic field occurs when a through short occurs in the same bridge arm.
When a through-short circuit occurs, the short-circuit,the upper switch tube and the lower switch tube of the bridge arm are all conducted, and positive currents with the same magnitude flow through the upper switch tube and the lower switch tube. Since the currents flowing through the upper and lower switch tubes generate magnetic fields with the same direction and magnitude at the detection position of the TMR detection circuit 10, the current monitored by the TMR detection circuit 10 is the sum of the upper and lower switch tube currents. Therefore, when the current of the upper switch tube and the lower switch tube reaches
When the intensity of the magnetic field detected by the TMR detection circuit 10 reaches a preset threshold value of the intensity of the magnetic field
。
This application has set up turn-off circuit 20 and has connected with detection circuitry 10, and when the magnetic field absolute value that detection circuitry 10 detected reached and predetermine the magnetic field intensity threshold value, the explanation had appeared overflowing or the condition of short circuit, and turn-off circuit 20 just can turn off at least one switch tube in N switch tubes this moment.
As can be seen from the foregoing analysis, for the condition that a single switching tube of the N switching tubes is in overcurrent, when the current of the switching tube reaches a preset overcurrent threshold, the turn-off function of the turn-off circuit 20 is triggered, so as to implement overcurrent protection. If a short circuit occurs, for example, in the above example, the currents of the upper and lower switch tubes do not need to reach the over-current threshold, but only need to reach the over-current threshold
When the intensity of the magnetic field detected by the TMR detection circuit 10 reaches a preset threshold value of the intensity of the magnetic field
Thereby triggering the shutdown function of the shutdown circuit 20, and therefore the short-circuit protection of the present application has a function of predicting in advance, so that the scheme of the present application can further improve the reliability of the protected circuit.
In the foregoing specific embodiment, N =2 is taken as an example for explanation, and in other embodiments, N may have a larger value. For example, for two arms in a full-bridge converter, there are 4 switching tubes, and if the implementation is performed according to the foregoing embodiment, two sets of short-circuit and overcurrent protection devices are provided, and each set is responsible for protecting two switching tubes in one arm. It is also possible to provide only 1 set of short-circuit and overcurrent protection devices while protecting the 4 switching tubes, i.e. N =4 at this time, and it is necessary to provide the detection circuit 10 at the respective designated detection position so that if the forward currents flowing through the 4 switching tubes are the same, the magnetic field vectors generated by the 4 switching tubes at the detection position of the detection circuit 10 are the same.
The specific configuration of the shutdown circuit 20 may be set and adjusted according to actual needs, for example, when the absolute value of the magnetic field detected by the detection circuit 10 reaches a preset magnetic field strength threshold, the shutdown circuit 20 may directly shut down at least one of the N switching tubes by controlling the corresponding driving circuit 26.
It should be noted that, at least one of the N switching tubes is turned off, so that overcurrent and short-circuit protection can be effectively performed, and in practical applications, in order to further improve safety, when the absolute value of the magnetic field detected by the detection circuit reaches the preset magnetic field strength threshold, the turn-off circuit may also select to turn off all the N switching tubes. For another example, for N switching tubes, one of the upper switching tube and the lower switching tube that form the same arm may be selected to turn off, for example, when N =4, and the 4 switching tubes form 2 arms, for example, all the upper switching tubes of 2 arms may be selected to turn off.
Further, in an embodiment of the present invention, considering that when an overcurrent or short-circuit fault occurs, the current flowing through the device is much larger than the normal operating current, and due to the existence of parasitic inductance of the main circuit, if the device is suddenly turned off, a voltage overshoot may occur across the device, and when the overshoot exceeds the withstand voltage limit of the device, the device may be broken down. The voltage overshoot is proportional to di/dt, and therefore an effective means of reducing voltage overshoot at turn-off is to reduce di/dt. Therefore, in an embodiment of the present invention, the shutdown circuit 20 is specifically configured to:
when the absolute value of the magnetic field detected by the detection circuit 10 reaches the threshold of the preset magnetic field strength, at least one of the N switching tubes is turned off in a two-level turn-off manner.
The two-level off mode refers to: when the switching tube is turned off, the driving voltage of the switching tube is reduced to an intermediate level, and then the device is completely turned off. Through two-level turn-off, compare direct turn-off, can reduce the emergence probability that the switch tube caused by overvoltage is punctured the condition effectively.
There are various specific circuit configurations of the shutdown circuit 20 adopting the two-level shutdown method, and the specific circuit configuration may be selected according to actual needs, and in a specific embodiment of the present invention, the shutdown circuit 20 may specifically include: n shut off the unit for carrying on the on-off control of N switch tubes respectively, and all include in each shut off the unit:
the charging trigger circuit 200, the input end of which is connected to the detection circuit 10, is configured to charge the first capacitor C1 and turn on the first switch unit S1 when the absolute value of the magnetic field detected by the detection circuit 10 reaches a preset magnetic field strength threshold;
a first resistor R1 having a first end connected to the control end of the driving circuit 26 and a second end of the first capacitor C1, respectively, and a second end connected to the output end of the charging trigger circuit 200 and the control end of the first switch unit S1, respectively;
a first capacitor C1 with a first terminal grounded;
a first switching unit S1 having a first terminal connected to the output terminal of the drive circuit 26 and a second terminal connected to the output terminal of the clamp circuit 21;
the clamping circuit 21 is used for clamping the control end voltage of a switching tube which is controlled by the turn-off unit to be in on-off control to be a preset intermediate voltage when the first switching unit S1 is switched on;
a drive circuit 26 having an output terminal connected to a control terminal of a switching tube on/off-controlled by the off unit;
the intermediate voltage is lower than the driving voltage output from the output terminal of the driving circuit 26; when the voltage of the control terminal of the driving circuit 26 does not reach the preset saturation voltage, the output terminal of the driving circuit 26 outputs the driving voltage, and when the voltage of the control terminal of the driving circuit 26 reaches the saturation voltage, the output terminal of the driving circuit 26 is connected to the preset low level.
The shutdown circuit 20 in this embodiment is composed of N shutdown units, and is responsible for shutdown control of 1 corresponding switching tube. Compared with the traditional circuits with two-level turn-off function, the turn-off unit in the embodiment has the advantages of less required devices, simple structure and high reliability.
In addition, because the existing switching tube usually has its driving circuit 26, and the requirement of the present application can be usually realized in function, in practical application, the driving circuit 26 in each turn-off unit can directly adopt the original driving circuit without additional arrangement, that is, in this embodiment, the present application only needs to arrange the charging trigger circuit 200, the first resistor R1, the first capacitor C1, the first switching unit S1 and the clamp circuit 21 at the periphery of the driving circuit 26, so that the required two-level turn-off function can be realized, the application range of the present application is very wide, and the modification amount to the original circuit is very small.
Specifically, the input end of the charging trigger circuit 200 is connected to the detection circuit 10, and when the absolute value of the magnetic field detected by the detection circuit 10 reaches the threshold of the preset magnetic field strength, the charging trigger circuit 200 may charge the first capacitor C1 and turn on the first switch unit S1. In practical application, the charging trigger circuit 200 and the clamping circuit 21 may be integrated in the driving circuit 26 as required, so as to improve the integration level and reduce the occupation of space. The specific circuit configuration of the charging trigger circuit 200 can be set as required, for example, in the specific embodiment of fig. 6, the charging trigger circuit 200 specifically includes:
a comparator 22 having a positive input terminal connected to the detection circuit 10 and a negative input terminal receiving a reference voltage, for outputting a fault signal when the voltage received at the positive input terminal is higher than the reference voltage;
a monostable flip-flop 23 having an input connected to the output of the comparator 22 for extending the fault signal by a first duration;
the input end of the buffer 24 is connected with the output end of the monostable trigger 23 and is used for driving the optical coupler 25 when receiving the fault signal output by the monostable trigger 23;
the optocoupler 25, having an input terminal connected to the buffer 24 and an output terminal serving as an output terminal of the charging triggering circuit 200, is configured to charge the first capacitor C1 and turn on the first switch unit S1 when receiving the driving of the buffer 24.
In the embodiment of fig. 6, when the absolute value of the magnetic field detected by the detection circuit 10 reaches the threshold of the preset magnetic field strength, the OUTPUT signal of the detection circuit 10 reaches the value of the reference voltage received by the negative input terminal of the comparator 22, that is, when an overcurrent or a short circuit occurs, the TMR IC OUTPUT in fig. 6 may reach or exceed the reference voltage
At this time, the comparator 22 can output a fault signal, which is usually high in a specific situation.
The monostable 23 functions to extend the duration of the fault signal, i.e. the monostable 23 can extend the fault signal by a preset first duration. The applicant has considered that, during the switching off of the switching tube, the fault signal is prolonged by the monostable trigger 23, so that a reliable switching off of the device can be ensured, since the current flowing through the device will drop, resulting in the fault signal disappearing.
In addition, in this embodiment, a buffer 24 and an optocoupler 25 are further provided, the optocoupler 25 can effectively isolate the detection circuit 10 from the main power circuit, that is, isolate the high voltage and the low voltage, thereby improving the reliability of the present application, the buffer 24 is used for enhancing the driving capability, and the output of the monostable flip-flop 23 usually cannot directly drive the optocoupler 25.
When the charging trigger circuit 200 outputs power, the first switch unit S1 is turned on, and meanwhile, the charging trigger circuit 200 can charge the first capacitor C1 through the RC charging circuit formed by the first resistor R1 and the first capacitor C1, and since the first resistor R1 is provided, the voltage of the first capacitor C1 is not directly pulled high, but is pulled high only by gradual charging.
If the voltage at the control terminal of the driving circuit 26 does not reach the preset saturation voltage, that is, the voltage of the first capacitor C1 does not reach the saturation voltage, the output terminal of the driving circuit 26 outputs the driving voltage, but since the first switch unit S1 is turned on, the clamping circuit 21 may clamp the voltage at the control terminal of the switch tube whose turn-off unit performs turn-on and turn-off control to the preset intermediate voltage. For example, in fig. 5, when N =2, the lower switching tube in one arm is protected, and the protected switching tube is denoted as Q2 in fig. 5, in this case, the clamp circuit 21 clamps the control terminal voltage of Q2 to a preset intermediate voltage. Generally, the clamping circuit 21 can be realized by a voltage source with adjustable output voltage, so as to conveniently realize the amplitude adjustment of the intermediate voltage.
As the voltage of the first capacitor C1 increases, when the voltage of the control terminal of the driving circuit 26 reaches the saturation voltage, the driving circuit 26 will connect its output terminal to the preset low level, that is, the driving circuit 26 can pull down the output of its own OUT port in fig. 5, so that the protected switch Q2 is completely turned off. It should be noted that the output terminal of the driving circuit 26 described in this application is connected to a preset low level, which may be the negative driving voltage VEE or the ground GND, specifically, when the negative driving voltage VEE is set in the circuit, for example, the negative driving voltage VEE is usually provided in the driving circuit 26 of the SiC MOSFET, the preset low level may be set as the negative driving voltage VEE, so as to effectively turn off the corresponding switch tube. For example, if the negative driving voltage VEE is not set in the driving circuit 26 in some cases, the output terminal of the driving circuit 26 is directly grounded, so that the corresponding switch tube can be turned off. The predetermined low level selects the negative driving voltage VEE, which has higher stability than the ground GND.
In this embodiment, the intermediate level duration can be conveniently adjusted by adjusting the parameters of C1 and R1. And it can be understood that the intermediate voltage should be lower than the driving voltage output from the output terminal of the driving circuit 26 and higher than the preset low level because of the two-level off.
The requirement of the present application for the driving circuit 26 is that the driving circuit 26 can determine whether its output terminal outputs the driving voltage normally or connects to a preset low level according to the voltage magnitude of its control terminal. When the output end outputs the driving voltage normally, the corresponding switch tube can be switched on normally, and when the output end is connected with the preset low level, the corresponding switch tube is switched off completely. In practical applications, especially, almost all the currently used driving circuits 26 for driving the IGBTs have a desaturation pin, which can be directly used as the control terminal of the present application, and the DESAT pin in fig. 5 is the desaturation pin, that is, the control terminal of the driving circuit 26 described in the present application. Of course, in other specific situations, the relevant pin of the driving circuit may be selected to be used as the control terminal of the driving circuit 26 described in this application according to practical situations, and the purpose of this application may be achieved.
In an embodiment of the present invention, referring to fig. 7, the clamping circuit 21 may specifically include:
a second resistor R2 having a first end connected to the positive electrode of the first power supply and the first end of the second capacitor C2, a second end connected to the negative electrode of the first zener diode D11, the second end of the second capacitor C2, and the first end of the third capacitor C3, respectively, and a second end of the second resistor R2 serving as the output end of the clamp circuit 21;
a second capacitance C2;
a third capacitance C3;
and the second end of the anode third capacitor C3 is connected with the first voltage-stabilizing diode D11, and the connection end of the first voltage-stabilizing diode is grounded.
In this embodiment, the voltage output of the clamp circuit 21, that is, the magnitude of the set intermediate voltage can be easily adjusted by adjusting the specification of the first zener diode D11, and the clamp circuit 21 in this embodiment has a simple structure and high reliability. In fig. 7, the first power supply positive electrode is denoted as VCC1, and a specific value may be set and adjusted as needed, and is generally consistent with VCC connected to the driving circuit 26. The ground terminal of the first zener diode D11 is labeled S, and refers to the source of Q2 in fig. 6, which is connected to GND of the driving circuit 26.
In an embodiment of the present invention, referring to fig. 6, the method may further include:
and the anode of the second zener diode D22 is connected with the first end of the first capacitor C1, and the cathode of the second zener diode D22 is connected with the second end of the first capacitor C1.
The second zener diode D22 is provided to avoid the situation that the control terminal of the driving circuit 26 has too high voltage to damage the circuit, i.e. to avoid the DESAT pin voltage in fig. 6 being too high.
In an embodiment of the present invention, referring to fig. 6, the method may further include:
a first diode D1 having an anode connected to an output terminal of the driving circuit 26 and a cathode connected to a first terminal of the first switching unit S1.
When the output end of the driving circuit 26 is pulled down, the protected switch tube is completely turned off, and in this embodiment, by setting the first diode D1, when the output end of the driving circuit 26 is pulled down, the situation that the switch tube to be protected is turned off is affected due to the current of the clamping circuit 21 flowing into the driving chip, which is further improved in reliability of the scheme of the present application.
In some cases, a push-pull circuit is provided between the output of the driving circuit 26 and the driven switching tube to improve the driving capability, for example, a push-pull circuit composed of one resistor and 2 transistors is provided in fig. 6.
The technical solution provided by the embodiment of the present invention is applied, the absolute value of the magnetic field at the detection position is detected by the detection circuit, and the applicant considers that, if the absolute value of the magnetic field generated by a certain switch tube at the detection position is detected by the detection circuit, the switch tube is easily interfered by an adjacent magnetic field, so in the solution of the present application, a specific detection position is selected instead of detecting the absolute value of the magnetic field at the detection position by the detection circuit, and when the detection circuit is located at the specific detection position, for N preset switch tubes in the protected circuit, if forward currents flowing through the N switch tubes are the same, magnetic field vectors generated by the switch tubes at the detection position of the detection circuit are the same. Therefore, in these N switch tubes, when 1 arbitrary switch tube overflows, when the magnetic field absolute value that detection circuitry detected just can reach preset magnetic field intensity threshold value, thereby the turn-off circuit can turn off at least one switch tube in N switch tubes, and the scheme of this application can realize the overcurrent protection of these N switch tubes effectively promptly. If a short circuit occurs, for example, an upper tube and a lower tube which form the same bridge arm in the N switching tubes are simultaneously conducted to cause a short circuit, and magnetic field vectors generated by the switching tubes at the detection position of the detection circuit are the same, so that as long as the current of the two short-circuited switching tubes reaches half of an overcurrent value, the absolute value of the magnetic field detected by the detection circuit reaches a preset magnetic field intensity threshold, and therefore, short circuit protection can be realized, and a function of predicting the short circuit in advance to a certain extent is also achieved. In addition, the over-current and short-circuit conditions can be immediately reflected on the magnetic field, so that the scheme of the application can quickly realize short-circuit and over-current protection. Moreover, the absolute value of the magnetic field detected by the detection circuit of the present application is the result of the combined action of the N switching tubes, so that the above-described situation of being interfered does not occur, that is, the present application is equivalent to converting an interference signal into a useful signal. In addition, the detection circuit for detecting the absolute value of the magnetic field is non-contact detection, so that the defects of loss increase, loop inductance and the like caused by traditional detection based on sampling resistance can be avoided, the detection circuit is simple in structure, and high-performance operational amplifier is not required, so that the cost and the complexity of the scheme of the application can be reduced.
To sum up, the scheme of the application can realize short circuit and overcurrent protection of the switching tube rapidly and accurately with low cost, has certain predictability for the short circuit condition, and can play the role of short circuit protection in advance.
Corresponding to the above embodiments of the short-circuit and overcurrent protection apparatus, embodiments of the present invention further provide a short-circuit and overcurrent protection method, which can be referred to in correspondence with the above, and the method can be applied to the short-circuit and overcurrent protection apparatus in any of the above embodiments, and includes:
the detection circuit detects the absolute value of the magnetic field; for N preset switching tubes in the protected circuit, if the forward currents flowing through the N switching tubes are the same, the magnetic field vectors generated by the switching tubes at the detection position of the detection circuit are the same, and N is a positive integer not less than 2;
when the absolute value of the magnetic field detected by the detection circuit reaches a preset magnetic field intensity threshold value, the turn-off circuit turns off at least one of the N switching tubes.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
Those of skill would further appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware, computer software, or combinations of both, and that the various illustrative components and steps have been described above generally in terms of their functionality in order to clearly illustrate this interchangeability of hardware and software. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the implementation. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present invention.
The principle and the implementation of the present invention are explained in the present application by using specific examples, and the above description of the embodiments is only used to help understanding the technical solution and the core idea of the present invention. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.
Claims (10)
1. A short circuit and overcurrent protection device, comprising:
a detection circuit for detecting an absolute value of the magnetic field; for preset N switching tubes in a protected circuit, if forward currents flowing through the N switching tubes are the same, magnetic field vectors generated by the switching tubes at the same detection position of the detection circuit are the same, and N is a positive integer not less than 2;
and the turn-off circuit is connected with the detection circuit and used for turning off at least one of the N switch tubes when the absolute value of the magnetic field detected by the detection circuit reaches a preset magnetic field intensity threshold value.
2. The short circuit and overcurrent protection device of claim 1, wherein N is 2, and the preset 2 switching tubes are an upper switching tube and a lower switching tube in the same bridge arm.
3. The short-circuit and overcurrent protection device according to claim 1, characterized in that the turn-off circuit is specifically configured to:
when the absolute value of the magnetic field detected by the detection circuit reaches a preset magnetic field intensity threshold value, at least one of the N switch tubes is turned off in a two-level turn-off mode.
4. The short circuit and overcurrent protection device of claim 3 wherein the shutdown circuit comprises: n shut off the unit for carrying on the on-off control of N switch tubes respectively, and each shut off in the unit all include:
the charging trigger circuit is connected with the detection circuit at the input end and used for charging the first capacitor and conducting the first switch unit when the absolute value of the magnetic field detected by the detection circuit reaches a preset magnetic field intensity threshold value;
the first end of the first resistor is connected with the control end of the driving circuit and the second end of the first capacitor respectively, and the second end of the first resistor is connected with the output end of the charging trigger circuit and the control end of the first switch unit respectively;
the first capacitor with a first end grounded;
the first switch unit is connected with the output end of the driving circuit at the first end and connected with the output end of the clamping circuit at the second end;
the clamping circuit is used for clamping the voltage at the control end of the switching tube which is controlled by the turn-off unit to be on and off into a preset intermediate voltage when the first switching unit is switched on;
the output end of the drive circuit is connected with the control end of the switch tube which is controlled by the turn-off unit to be turned on and off;
the intermediate voltage is lower than the driving voltage output by the output end of the driving circuit; when the voltage of the control end of the driving circuit does not reach the preset saturation voltage, the output end of the driving circuit outputs the driving voltage, and when the voltage of the control end of the driving circuit reaches the saturation voltage, the output end of the driving circuit is connected with the preset low level.
5. The short circuit and overcurrent protection apparatus of claim 4 wherein the clamp circuit comprises:
a second resistor having a first end connected to the positive electrode of the first power supply and the first end of the second capacitor, a second end connected to the negative electrode of the first zener diode, the second end of the second capacitor and the first end of the third capacitor, and the second end of the second resistor serving as the output end of the clamp circuit;
the second capacitor;
the third capacitor;
and the second end of the third capacitor at the anode is connected, and the connection end of the first voltage stabilizing diode is grounded.
6. The short circuit and overcurrent protection device of claim 4, further comprising:
and the anode of the second voltage stabilizing diode is connected with the first end of the first capacitor, and the cathode of the second voltage stabilizing diode is connected with the second end of the first capacitor.
7. The short circuit and overcurrent protection device of claim 4, further comprising:
and the anode of the first diode is connected with the output end of the driving circuit, and the cathode of the first diode is connected with the first end of the first switch unit.
8. The short circuit and overcurrent protection arrangement as set forth in any one of claims 4 to 7 wherein the charging trigger circuit comprises:
the comparator is used for outputting a fault signal when the voltage received by the positive input end is higher than the reference voltage;
the monostable trigger is connected with the output end of the comparator at the input end and is used for prolonging the fault signal for a first time length;
the input end of the buffer is connected with the output end of the monostable trigger and used for driving the buffer of the optical coupler when receiving a fault signal output by the monostable trigger;
the input end of the optical coupler is connected with the buffer, and the output end of the optical coupler is used as the output end of the charging trigger circuit and used for charging the first capacitor and enabling the first switch unit to be conducted when the optical coupler is driven by the buffer.
9. The short circuit and overcurrent protection device of claim 1 wherein the sense circuit is a TMR sense circuit.
10. A short-circuit and overcurrent protection method, applied to the short-circuit and overcurrent protection apparatus according to any one of claims 1 to 9, comprising:
the detection circuit detects the absolute value of the magnetic field; for preset N switching tubes in a protected circuit, if forward currents flowing through the N switching tubes are the same, magnetic field vectors generated by the switching tubes at the same detection position of the detection circuit are the same, and N is a positive integer not less than 2;
when the absolute value of the magnetic field detected by the detection circuit reaches a preset magnetic field intensity threshold value, the turn-off circuit turns off at least one of the N switch tubes.
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