GB201420038D0 - Gate boost - Google Patents
Gate boostInfo
- Publication number
- GB201420038D0 GB201420038D0 GBGB1420038.0A GB201420038A GB201420038D0 GB 201420038 D0 GB201420038 D0 GB 201420038D0 GB 201420038 A GB201420038 A GB 201420038A GB 201420038 D0 GB201420038 D0 GB 201420038D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- gate boost
- boost
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/0406—Modifications for accelerating switching in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1420038.0A GB2532215A (en) | 2014-11-11 | 2014-11-11 | Gate boost |
US15/515,982 US10199916B2 (en) | 2014-11-11 | 2015-11-09 | Resistor emulation and gate boost |
CN201580061190.0A CN107112887B (en) | 2014-11-11 | 2015-11-09 | Resistor emulation and gate boost |
KR1020177015887A KR102404605B1 (en) | 2014-11-11 | 2015-11-09 | Resistor emulation and gate boost |
PCT/EP2015/076003 WO2016075056A1 (en) | 2014-11-11 | 2015-11-09 | Resistor emulation and gate boost |
JP2017525372A JP2017534237A (en) | 2014-11-11 | 2015-11-09 | Resistor emulation and gate boost |
EP15790971.4A EP3219010B1 (en) | 2014-11-11 | 2015-11-09 | Resistor emulation and gate boost |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1420038.0A GB2532215A (en) | 2014-11-11 | 2014-11-11 | Gate boost |
Publications (2)
Publication Number | Publication Date |
---|---|
GB201420038D0 true GB201420038D0 (en) | 2014-12-24 |
GB2532215A GB2532215A (en) | 2016-05-18 |
Family
ID=52118309
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1420038.0A Withdrawn GB2532215A (en) | 2014-11-11 | 2014-11-11 | Gate boost |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2532215A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109565272A (en) * | 2016-06-16 | 2019-04-02 | 法雷奥西门子新能源汽车(德国)有限公司 | Power semiconductor circuits |
CN110350769A (en) * | 2018-04-05 | 2019-10-18 | 株式会社电装 | Driving circuit for switch |
CN111313874A (en) * | 2020-03-18 | 2020-06-19 | 上海海事大学 | Current detection device for SiC MOSFET and short-circuit protection method |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB201609907D0 (en) | 2016-06-07 | 2016-07-20 | Rolls Royce Plc | Method for estimating power system health |
WO2018225083A1 (en) * | 2017-06-08 | 2018-12-13 | INDIAN INSTITUTE OF TECHNOLOGY MADRAS (IIT Madras) | Digitally controlled switched current source active gate driver for silicon carbide mosfet with line current sensing |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112007002874T5 (en) * | 2006-11-29 | 2010-02-18 | Continental Automotive Systems US, Inc., Auburn Hills | Operation and control of insulated gate bipolar transistors in high speed failure mode situations |
FI120812B (en) * | 2007-04-30 | 2010-03-15 | Vacon Oyj | Control of a power semiconductor coupler |
GB2497967B (en) * | 2011-12-23 | 2018-02-21 | Reinhausen Maschf Scheubeck | Fault-tolerant control systems |
JP5761215B2 (en) * | 2013-01-21 | 2015-08-12 | 株式会社デンソー | Gate drive circuit |
CN103973277B (en) * | 2013-02-05 | 2017-06-09 | 通用电气公司 | The short-circuit protection circuit and method of insulated gate bipolar transistor |
-
2014
- 2014-11-11 GB GB1420038.0A patent/GB2532215A/en not_active Withdrawn
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109565272A (en) * | 2016-06-16 | 2019-04-02 | 法雷奥西门子新能源汽车(德国)有限公司 | Power semiconductor circuits |
CN110350769A (en) * | 2018-04-05 | 2019-10-18 | 株式会社电装 | Driving circuit for switch |
CN110350769B (en) * | 2018-04-05 | 2024-03-26 | 株式会社电装 | Driving circuit for switch |
CN111313874A (en) * | 2020-03-18 | 2020-06-19 | 上海海事大学 | Current detection device for SiC MOSFET and short-circuit protection method |
Also Published As
Publication number | Publication date |
---|---|
GB2532215A (en) | 2016-05-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
COOA | Change in applicant's name or ownership of the application |
Owner name: MASCHINENFABRIK REINHAUSEN GMBH Free format text: FORMER OWNER: AMANTYS LTD |
|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |