CN114499475A - Multi-stage GaN HEMT drive circuit and working method thereof - Google Patents
Multi-stage GaN HEMT drive circuit and working method thereof Download PDFInfo
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- CN114499475A CN114499475A CN202210152039.XA CN202210152039A CN114499475A CN 114499475 A CN114499475 A CN 114499475A CN 202210152039 A CN202210152039 A CN 202210152039A CN 114499475 A CN114499475 A CN 114499475A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
- H03K17/04206—Modifications for accelerating switching by feedback from the output circuit to the control circuit in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention discloses a multistage GaN HEMT drive circuit and a working method thereof, relating to the technical field of GaN device drive and comprising the following steps: driving power supplyVcc1N-type MOSFETQ1And P-type MOSFETQ2Push-pull circuit and resistor formed in seriesR3And diodeD1A charge-discharge loop formed by series connection; wherein the power supplyVcc2Resistance, and a method for manufacturing the sameR6A pull-up circuit of a triode in series connection to form a two-stage current supplement circuit and a comparatorZ1A comparator circuit for forming an expansion circuit; the charge-discharge loop is used for providing reliable turn-off and conventional current, so that the turn-on and turn-off speed of the gallium nitride device can be ensured, the generation of voltage spikes is avoided, and the voltage oscillation during turn-off is inhibited; the comparator circuit leaves more possibilities for circuit expansion, the number of the secondary current supplement circuits can be adjusted according to requirements by combining the digital control circuit, and then the driving capability of the circuit is changed to provide stabilityAnd the driving voltage is fixed, so that the reliable operation of the GaN HEMT device is ensured.
Description
Technical Field
The invention relates to the technical field of GaN device driving, in particular to a multi-stage GaN HEMT driving circuit and a working method thereof.
Background
The GaN device has smaller on-resistance and grid charge under the same withstand voltage, and has high switching speed and high power density; however, because the GaN HEMT has a high fast turn-off speed and the stray inductance and parasitic capacitance of the line exist, a high voltage spike is generated at the moment when the device is turned on and off, and the safety of the device and the circuit topology is affected; the commonly used method for restraining the voltage spike during the on-off process comprises the following steps: 1. the capacitance value of a grid source electrode is increased, namely, a capacitor is connected in parallel with the grid source electrode of the device to inhibit voltage spikes, but the turn-on time and the turn-off time are increased, and the grid source driving voltage is reduced; 2. reducing the gate resistance reduces the crosstalk voltage disturbance by reducing the resistance, but induces oscillations when the device is turned off.
For example: the resonant driving circuit can provide stable voltage for the GaN HEMT device, meanwhile, energy feedback is realized, loss is reduced, but the defect is obvious, the value of the adopted resonant inductance reaches nH level, the influence of other stray parameters such as plate distribution, parasitic inductance of the device and the like can be caused in practical application, and the design difficulty is high; the driving mode obviously reduces the loss only at ultrahigh frequency and cannot be generally applied; the independent driving circuit with the separated charging and discharging loop has long rising time, can greatly influence the switching speed of the gallium nitride device, has weak driving capability, cannot obtain expected driving voltage on the grid, has large ringing during turn-off, and is easy to cause misconduction of the GaN HEMT device.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art. Therefore, the invention provides the multistage GaN HEMT driving circuit and the working method thereof, which not only can ensure the on-off speed of a gallium nitride device, but also can avoid the generation of voltage spikes and inhibit the voltage oscillation during the off-state.
To achieve the above object, an embodiment according to a first aspect of the present invention proposes a multi-stage GaN HEMT driving circuit including a driving power supply Vcc1N-type MOSFET Q1And P-type MOSFET Q2Formed by connecting in seriesPush-pull circuit and resistor R3And a diode D1Charge-discharge loop and resistor R formed by series connection4And a capacitor C1；
Wherein the resistance R4For current-limiting resistors in charge-discharge circuits, power supply Vcc3Triode B1And a resistance R5In series, wherein the power supply Vcc2Resistance R6A triode pull-up circuit connected in series to form a two-stage current supplement circuit, and a comparator Z1A comparator circuit for forming an expansion circuit; capacitor C1One end of the grid is connected with the grid of the GAN HEMT, and the other end of the grid is connected with the source of the GAN HEMT.
Further, the push-pull circuit: n-type MOSFET Q1Drain electrode and driving power supply Vcc1Connected with source electrode of P-type MOSFET Q2Drain connected to the input resistor R, and gate connected to the input resistor R1Connecting; p-type MOSFET Q2Drain and N-type MOSFET Q1Source connected to the input resistor R, gate connected to the input resistor R2Connected and the source is grounded.
Further, an input resistor R1And an input resistor R2Connected in parallel and input a resistance R1One end connected with external PWM input signal and the other end connected with N-type MOSFET Q1The grid electrodes are connected; input resistance R2One terminal and input resistor R1Connected in parallel, and the other end is connected with a P-type MOSFET Q2The gates are connected.
Further, the secondary current supplement circuit comprises a triode B1Connected to the triode B1Resistance R between emitter and GaN HEMT source5Connected to the triode B1Base and source VCC2Resistance R between6And is connected to the triode B1Collector source VCC3(ii) a Wherein, the triode B1Collector and power supply Vcc3Connected to an emitter electrode and a resistor R5Connected to a base electrode and a resistor R6Connecting; resistance R5One end of the transistor is connected with a triode B1The emitter is connected, and the other end of the emitter is connected with the grid of the GAN HEMT; resistance R6One end of the transistor is connected with a triode B1Base electrode connected to power supply Vcc2Are connected.
Further, a resistor R4One terminal and resistor R3The other end of the grid is connected with the grid of the GAN HEMT; resistance R3One terminal and Q1、Q2The other end is connected with a diode D1Connecting the cathodes; diode D1The anode is connected with the grid of the GAN HEMT.
Further, the comparator circuit comprises a comparator Z1And a resistance R6(ii) a Wherein the comparator Z1Negative input terminal and resistor R1、R2Connected in parallel with an external PWM input signal, and having a positive input terminal connected with a reference voltage VrefConnected with the output end of the resistor R6One end is connected with a power supply Vcc2Are connected.
Further, the working method of the multi-stage GaN HEMT driving circuit is applied to the multi-stage GaN HEMT driving circuit, wherein the working mode of the secondary current supplement circuit is as follows: given comparator Z1A reference voltage VrefIn the on-phase of the device, when the voltage of the negative input end is higher than the reference voltage VrefThe comparator outputs a high impedance state, at which time the power supply Vcc2And a resistance R6Providing a pull-up current to enable transistor B1Power-on, power supply Vcc3Via a triode B1And a resistance R5To the capacitor C1、CgsCharging when the capacitor C is charged1、CgsThe voltage at two ends approaches to a power supply Vcc2At voltage, the transistor B is clamped by the voltage of the transistor1And turning off the secondary current supplement circuit and quitting the working state.
Further, the comparator circuit operates in a manner that: the number of the secondary current supplement circuits is selected according to the actual condition of the switching device, and when the required driving energy is large, the comparator Z is given in a digital control mode1The positive input terminal of the comparator is at a low level, so that the driving signal of the negative input terminal is constantly greater than the voltage of the positive input terminal, and the comparator Z1Continuously output high impedance state, thereby the triode B1Under normal operation, the secondary current supplement circuit is switched to C when the device is switched on1、CgsCharging to increase the circuit driving capacity; when the required drive energy is small, comparator Z is given1The positive input terminal is at high level to make the drive signal of the negative input terminal constantly less than the voltage of the positive input terminal, and a comparator Z1Output low level, supply Vcc2Pulled to the ground to make the triode B1The secondary current supplement circuit is disconnected from the drive circuit when the secondary current supplement circuit cannot be switched on.
Compared with the prior art, the invention has the beneficial effects that:
1. the invention can avoid voltage spike when in starting and reduce voltage oscillation when in cutting off, and simulation results show that the invention can avoid voltage spike when in starting, increase speed when in starting and increase driving voltage.
2. The invention introduces two sections of driving circuits, and makes up the problems of reduced turn-on speed and insufficient driving voltage caused by the fact that voltage spikes are restrained in the grid-source electrode parallel capacitor.
3. The comparator circuit introduced by the invention leaves more possibilities for circuit expansion, and the number of the driving circuits can be adjusted according to requirements by combining a digital control circuit, so that the driving capability of the circuit is changed.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic diagram of a GaN HEMT driving circuit structure applied to a flyback circuit of the present invention.
FIG. 2 is a diagram of the voltage waveform and the switching waveform during the initial period of the present invention.
FIG. 3 is a waveform diagram of the driving circuit according to the present invention.
FIG. 4 is a simulation waveform diagram of the opening process of the GaN HEMT device of the invention.
FIG. 5 is a waveform diagram of a simulation of a driving circuit without a secondary current compensation circuit.
FIG. 6 is a simulated waveform diagram of the GaN HEMT device during the turn-on process without the secondary current compensation circuit.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the following embodiments, and it should be understood that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
As shown in FIGS. 1 to 6, the multi-stage GaN HEMT driving circuit includes a driving power supply Vcc1N-type MOSFET Q1And P-type MOSFET Q2Push-pull circuit formed by series connection and resistor R3And a diode D1A charge-discharge loop formed by series connection; wherein the resistance R4For current-limiting resistors in charge-discharge circuits, power supply Vcc3Triode B1And a resistance R5In series, wherein the power supply Vcc2Resistance R6A triode pull-up circuit connected in series to form a two-stage current supplement circuit, and a comparator Z1A comparator circuit for forming an expansion circuit; capacitor C1One end of the grid is connected with the grid of the GAN HEMT, and the other end of the grid is connected with the source of the GAN HEMT;
input resistance R1And an input resistor R2Connected in parallel and input a resistance R1One end connected with external PWM input signal and the other end connected with N-type MOSFET Q1The grid electrodes are connected; input resistance R2One terminal and input resistor R1Connected in parallel, and the other end is connected with a P-type MOSFET Q2The grid electrodes are connected;
resistance R4One terminal and resistor R3The other end of the grid is connected with the grid of the GAN HEMT; resistance R3One terminal and Q1、Q2The other end is connected with a diode D1Connecting the cathodes; diode D1The anode is connected with the grid of the GAN HEMT;
a push-pull circuit: n-type MOSFET Q1Drain electrode and driving power supply Vcc1Connected with source electrode of P-type MOSFET Q2Drain connected to the input resistor R, and gate connected to the input resistor R1Connecting;p-type MOSFET Q2Drain and N-type MOSFET Q1Source connected to the input resistor R, gate connected to the input resistor R2The source electrodes are connected with the ground;
the secondary current supplement circuit comprises a triode B1Connected to the triode B1Resistance R between emitter and GaN HEMT source5Connected to the triode B1Base and source VCC2Resistance R between6And is connected to the triode B1Collector source VCC3(ii) a Wherein, the triode B1Collector and power supply Vcc3Connected to an emitter electrode and a resistor R5Connected to a base electrode and a resistor R6Connecting; resistance R5One end of the transistor is connected with a triode B1The emitter is connected, and the other end of the emitter is connected with the grid of the GAN HEMT; resistance R6One end of the transistor is connected with a triode B1Base electrode connected to power supply Vcc2Connecting;
comparator circuit for an expander circuit, comprising a comparator Z1And a resistance R6(ii) a Wherein the comparator Z1Negative input terminal and resistor R1、R2Connected in parallel with an external PWM input signal, and having a positive input terminal connected with a reference voltage VrefConnected with the output end of the resistor R6One end is connected with a power supply Vcc2Connecting;
the working principle of the secondary current supplement circuit is as follows: given comparator Z1A reference voltage VrefIn the on-phase of the device, when the voltage of the negative input end is higher than the reference voltage VrefThe comparator outputs a high impedance state, at which time the power supply Vcc2And a resistance R6Providing a pull-up current to enable transistor B1Power-on, power supply Vcc3Via a triode B1And a resistance R5To the capacitor C1、CgCharging when the capacitor C is charged1、CgsThe voltage at two ends approaches to a power supply Vcc2Time of voltage (V)cc2-VgsAbout 0.7V), transistor B due to the voltage clamping effect of the transistor1Turning off the secondary current supplement circuit, and enabling the secondary current supplement circuit to exit the working state;
the use principle of the comparator circuit for the expansion circuit is as follows: according to the actual conditions of the switching devicesThe number of the secondary current supplement circuits is selected, and when the required driving energy is large, the comparator Z can be given in a digital control mode1The positive input terminal of the comparator is at a low level, so that the driving signal of the negative input terminal is constantly greater than the voltage of the positive input terminal, and the comparator Z1Continuously output high impedance state, thereby the triode B1Under normal operation, the secondary current supplement circuit is switched to C when the device is switched on1、CgsAnd charging is carried out, so that the circuit driving capacity is increased. When the required drive energy is small, comparator Z is given1The positive input terminal is at high level to make the drive signal of the negative input terminal constantly less than the voltage of the positive input terminal, and a comparator Z1Output low level, supply Vcc2Pulled to the ground to make the triode B1The secondary current supplement circuit is disconnected from the drive circuit when the secondary current supplement circuit cannot be switched on;
FIG. 2 shows the drive voltage waveform and the switching waveform of the present invention during one cycle, where S1For the upper bridge arm drive signal of the push-pull circuit, S2For the lower arm drive signal of the push-pull circuit, VgsIs a gate-source voltage waveform, i.e., a drive voltage waveform.
At t0-t1Period of time, S1Opening, S2Turn off, current through Q1-R4Respectively to the capacitor C1、CgsThe charging raises the driving voltage to the rated voltage.
At t1-t2Period of time, S1、S2And meanwhile, the power is turned off, and the voltage at the two ends of the grid source of the device is maintained at the rated driving voltage.
At t3Time of day, S1Off, S2On and current flows through D1-R5-Q2And R3-Q2Two road pairs C1、CgsDischarge, large capacitance C1The function of restraining voltage oscillation during turn-off is achieved.
At t3-t4Period of time, S2Is completely opened, S1Complete shut off of C1、CgsDischarging until the voltage is 0V, and keeping.
At t4-t5Period of time, S1、S2Are all turned off, and the gate-source voltage continues to be kept at 0V.
At t5-t6Period of time, S1Opening, S2Completely off and current through Q1-R3And Vcc3-B1-R4Respectively to C1、CgsCharging until the gate-source voltage rises to approach Vcc2。
At t6At any moment, the current branch V is supplemented due to the clamping of the triodecc3-B1-R4And (5) disconnecting.
At t6-t7Time period, current passing through Q1-R3To C1、CgsAnd charging until the gate-source voltage rises to the rated voltage.
In this embodiment, the secondary current supplement circuit may be expanded in number, and may be adjusted to increase or decrease the number of the secondary current supplement circuit according to the actual current required for driving the switching device through the selection of the comparator expansion circuit and the selection of the digital control system.
In this embodiment, the comparator circuit may be used as an interface for feeding back a signal, and predict the operating condition of the switching device by collecting the real-time state of the switching device, such as temperature, and use the fed-back signal as a signal for controlling the on/off of the secondary current compensation circuit.
The working principle of the invention is as follows:
when the multi-stage GaN HEMT driving circuit works, the number of the secondary current supplement circuits is selected according to the actual condition of the switching device, and when the required driving energy is large, the comparator Z can be given in a digital control mode1The positive input terminal of the comparator is at a low level, so that the driving signal of the negative input terminal is constantly greater than the voltage of the positive input terminal, and the comparator Z1Continuously output high impedance state, thereby the triode B1Under normal operation, the secondary current supplement circuit is switched to C when the device is switched on1、CgsAnd charging is carried out, so that the circuit driving capacity is increased. When the required drive energy is small, comparator Z is given1The positive input terminal is at high level, so that the driving signal at the negative input terminalA comparator Z with constant number less than positive input terminal voltage1Output low level, supply Vcc2Pulled to the ground to make the triode B1The secondary current supplement circuit is disconnected from the drive circuit when the secondary current supplement circuit cannot be switched on.
In the description herein, references to the description of "one embodiment," "an example," "a specific example" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The preferred embodiments of the invention disclosed above are intended to be illustrative only. The preferred embodiments are not intended to be exhaustive or to limit the invention to the precise forms disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention. The invention is limited only by the claims and their full scope and equivalents.
Claims (8)
1. The multi-stage GaN HEMT drive circuit is characterized by comprising a drive power supply Vcc1N-type MOSFET Q1And P-type MOSFET Q2Push-pull circuit and resistor R formed by series connection3And a diode D1Charge-discharge loop and resistor R formed by series connection4And a capacitor C1；
Wherein the resistance R4For current-limiting resistors in charge-discharge circuits, power supply Vcc3Triode B1And a resistance R5In series, wherein the power supply Vcc2Resistance R6A triode pull-up circuit connected in series to form a two-stage current supplement circuit, and a comparator Z1A comparator circuit for forming an expansion circuit; capacitor C1One end ofAnd the other end of the grid is connected with a source electrode of the GAN HEMT.
2. The multi-stage GaN HEMT drive circuit of claim 1, wherein said push-pull circuit: n-type MOSFET Q1Drain electrode and driving power supply Vcc1Connected with source electrode of P-type MOSFET Q2Drain connected to the input resistor R, and gate connected to the input resistor R1Connecting; p-type MOSFET Q2Drain and N-type MOSFET Q1Source connected to the input resistor R, gate connected to the input resistor R2Connected and the source is grounded.
3. The multi-stage GaN HEMT drive circuit of claim 2, wherein an input resistor R1And an input resistor R2Connected in parallel and input a resistance R1One end connected with external PWM input signal and the other end connected with N-type MOSFET Q1The grid electrodes are connected; input resistance R2One terminal and input resistor R1Connected in parallel, and the other end is connected with a P-type MOSFET Q2The gates are connected.
4. The multi-stage GaN HEMT drive circuit of claim 1, wherein the two-stage current supplement circuit comprises a triode B1Connected to the triode B1Resistance R between emitter and GaN HEMT source5Connected to the triode B1Base and source VCC2Resistance R between6And is connected to the triode B1Collector source VCC3(ii) a Wherein, the triode B1Collector and power supply Vcc3Connected to an emitter electrode and a resistor R5Connected to a base electrode and a resistor R6Connecting; resistance R5One end of the transistor is connected with a triode B1The emitter is connected, and the other end of the emitter is connected with a GANHEMT grid; resistance R6One end of the transistor is connected with a triode B1Base electrode connected to power supply Vcc2Are connected.
5. The multi-stage GaN HEMT drive circuit of claim 1, wherein a resistance R4One terminal and resistor R3The other end of the grid is connected with the grid of the GAN HEMT; resistance R3One end and Q1、Q2The other end is connected with a diode D1Connecting the cathodes; diode D1The anode is connected with the grid of the GAN HEMT.
6. The multi-stage GaN HEMT drive circuit of claim 1, wherein the comparator circuit comprises a comparator Z1And a resistance R6(ii) a Wherein the comparator Z1Negative input terminal and resistor R1、R2Connected in parallel with an external PWM input signal, and having a positive input terminal connected with a reference voltage VrefConnected with the output end of the resistor R6One end is connected with a power supply Vcc2Are connected.
7. The operation method of the multi-stage GaN HEMT drive circuit is applied to the multi-stage GaN HEMT drive circuit as claimed in claims 1-6, wherein the two-stage current supplement circuit operates in the following way: given comparator Z1A reference voltage VrefIn the on-phase of the device, when the voltage of the negative input end is higher than the reference voltage VrefThe comparator outputs a high impedance state, at which time the power supply Vcc2And a resistance R6Providing a pull-up current to enable transistor B1Power-on, power supply Vcc3Via a triode B1And a resistance R5To the capacitor C1、CgsCharging; when the capacitance C1、CgsThe voltage at two ends approaches to a power supply Vcc2At voltage, the transistor B is clamped by the voltage of the transistor1And turning off the secondary current supplement circuit and quitting the working state.
8. The operating method of the multi-stage GaN HEMT drive circuit of claim 7, wherein the comparator circuit operates by: the number of the secondary current supplement circuits is selected according to the actual condition of the switching device, and when the required driving energy is large, the comparator Z is given in a digital control mode1The positive input terminal of the amplifier is at a low level, so that the driving signal at the negative input terminal is constantly greater than the positive outputInput terminal voltage, comparator Z1Continuously output high impedance state, thereby the triode B1Under normal operation, the secondary current supplement circuit is switched to C when the device is switched on1、CgsCharging to increase the circuit driving capacity; when the required drive energy is small, comparator Z is given1The positive input terminal is at high level to make the drive signal of the negative input terminal constantly less than the voltage of the positive input terminal, and a comparator Z1Output low level, supply Vcc2Pulled to the ground to make the triode B1The secondary current supplement circuit is disconnected from the drive circuit when the secondary current supplement circuit cannot be switched on.
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| CN114499475B (en) | 2022-11-08 |
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