CN114499475B - Multi-stage GaN HEMT drive circuit and working method thereof - Google Patents
Multi-stage GaN HEMT drive circuit and working method thereof Download PDFInfo
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- CN114499475B CN114499475B CN202210152039.XA CN202210152039A CN114499475B CN 114499475 B CN114499475 B CN 114499475B CN 202210152039 A CN202210152039 A CN 202210152039A CN 114499475 B CN114499475 B CN 114499475B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
- H03K17/04206—Modifications for accelerating switching by feedback from the output circuit to the control circuit in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention discloses a multistage GaN HEMT drive circuit and a working method thereof, relating to the technical field of GaN device drive and comprising the following steps: driving power supply Vcc1 N-type MOSFET Q1 And P-type MOSFET Q2 Push-pull circuit and resistor formed in series R3 And diode D1 A charge-discharge loop formed by series connection; wherein the power supply Vcc2 Resistance, and a method for manufacturing the same R6 A pull-up circuit of a triode in series connection to form a two-stage current supplement circuit and a comparator Z1 A comparator circuit for forming an expansion circuit; the charge-discharge loop is used for providing reliable turn-off and conventional current, so that the turn-on and turn-off speed of the gallium nitride device can be ensured, the generation of voltage spikes is avoided, and the voltage oscillation during turn-off is inhibited; the comparator circuit leaves more possibilities for circuit expansion, the number of the secondary current supplement circuits can be adjusted according to requirements by combining the digital control circuit, the driving capability of the circuit is changed, stable driving voltage is provided, and reliable operation of the GaN HEMT device is guaranteed.
Description
Technical Field
The invention relates to the technical field of GaN device driving, in particular to a multi-stage GaN HEMT driving circuit and a working method thereof.
Background
The GaN device has smaller on-resistance and grid charge under the same withstand voltage, and has high switching speed and high power density; however, because the GaN HEMT has a high fast turn-off speed and the stray inductance and parasitic capacitance of the line exist, a high voltage spike is generated at the moment when the device is turned on and off, and the safety of the device and the circuit topology is affected; the commonly used method for restraining the voltage spike during the on-off process comprises the following steps: 1. the capacitance value of a grid source electrode is increased, namely, a capacitor is connected in parallel with the grid source electrode of the device to inhibit voltage spikes, but the turn-on time and the turn-off time are increased, and the grid source driving voltage is reduced; 2. reducing the gate resistance reduces the crosstalk voltage disturbance by reducing the resistance, but induces oscillations when the device is turned off.
For example: the resonant driving circuit can provide stable voltage for the GaN HEMT device, meanwhile, energy feedback is realized, loss is reduced, but the defect is obvious, the value of the adopted resonant inductance reaches nH level, the influence of other stray parameters such as plate distribution, parasitic inductance of the device and the like can be caused in practical application, and the design difficulty is high; the driving mode obviously reduces the loss only at ultrahigh frequency and cannot be generally applied; the independent driving circuit with the separated charging and discharging loop has long rising time, can greatly influence the switching speed of the gallium nitride device, has weak driving capability, cannot obtain expected driving voltage on the grid, has large ringing during turn-off, and is easy to cause misconduction of the GaN HEMT device.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art. Therefore, the invention provides the multistage GaN HEMT driving circuit and the working method thereof, which not only can ensure the on-off speed of a gallium nitride device, but also can avoid the generation of voltage spikes and inhibit the voltage oscillation during the off process.
To achieve the above object, an embodiment according to a first aspect of the present invention proposes a multi-stage GaN HEMT driving circuit including a driving power supply V cc1 N-type MOSFET Q 1 And P-type MOSFET Q 2 Push-pull circuit and resistor R formed by series connection 3 And a diode D 1 Charge-discharge loop and resistor R formed by series connection 4 And a capacitor C 1 ；
Wherein the resistance R 4 For current-limiting resistors in charge-discharge circuits, power supply V cc3 Triode B 1 And a resistance R 5 In series, wherein the power supply V cc2 Resistance R 6 A triode pull-up circuit connected in series to form a two-stage current supplement circuit, and a comparator Z 1 A comparator circuit for forming an expansion circuit; capacitor C 1 One end of the grid is connected with the grid of the GAN HEMT, and the other end of the grid is connected with the source of the GAN HEMT.
Further, the push-pull circuit: n-type MOSFET Q 1 Drain electrode and driving power supply V cc1 Connected with source electrode of P-type MOSFET Q 2 Drain connected to the input resistor R, and gate connected to the input resistor R 1 Connecting; p-type MOSFET Q 2 Drain and N-type MOSFET Q 1 Source connected to the input resistor R, gate connected to the input resistor R 2 Connected and the source is grounded.
Further, an input resistor R 1 And an input resistor R 2 Connected in parallel and input a resistance R 1 One end connected with external PWM input signal and the other end connected with N-type MOSFET Q 1 The grid electrodes are connected; input resistance R 2 One end and an input resistor R 1 Connected in parallel with the other end of the P-type MOSFET Q 2 The gates are connected.
Further, the secondary current supplement circuit comprises a triode B 1 Connected to the triode B 1 Resistance R between emitter and GaN HEMT source 5 Connected to the triode B 1 Base and source V CC2 R between 6 And is connected to the triode B 1 Collector power supply V CC3 (ii) a Wherein, the triode B 1 Collector and power supply V cc3 Connected to an emitter electrode and a resistor R 5 Connected to a base electrode and a resistor R 6 Connecting; resistance R 5 One end of the transistor is connected with a triode B 1 The emitter is connected, and the other end of the emitter is connected with the grid of the GAN HEMT; resistance R 6 One end of the transistor is connected with a triode B 1 Base electrode connected to power supply V cc2 Are connected.
Further, a resistor R 4 One terminal and resistor R 3 The other end of the grid is connected with the grid of the GAN HEMT; resistance R 3 One terminal and Q 1 、Q 2 The other end is connected with a diode D 1 Connecting the cathodes; diode D 1 The anode is connected with the grid of the GAN HEMT.
Further, the comparator circuit comprises a comparator Z 1 And a resistance R 6 (ii) a Wherein the comparator Z 1 Negative input terminal and resistor R 1 、R 2 Connected in parallel with an external PWM input signal, and having a positive input terminal connected with a reference voltage V ref Connected with output terminal connected with resistor R 6 One end is connected with a power supply V cc2 Are connected.
Further, the working method of the multi-stage GaN HEMT driving circuit is applied to the multi-stage GaN HEMT driving circuit, wherein the working mode of the secondary current supplement circuit is as follows: given comparator Z 1 A reference voltage V ref In the on-phase of the device, when the voltage of the negative input end is higher than the reference voltage V ref The comparator outputs a high impedance state, at which time the power supply V cc2 And a resistance R 6 Providing a pull-up current to enable transistor B 1 Power-on, power supply V cc3 Via a triode B 1 And a resistance R 5 To the capacitor C 1 、C gs Charging when the capacitor C is charged 1 、C gs The voltage at two ends approaches to a power supply V cc2 At voltage, the transistor B is clamped by the voltage of the transistor 1 And turning off the secondary current supplement circuit and quitting the working state.
Further, the comparator circuit operates in a manner that: the number of the secondary current supplement circuits is selected according to the actual condition of the switching device, and when the required driving energy is large, the comparator Z is given in a digital control mode 1 The positive input terminal of the comparator is at a low level, so that the driving signal of the negative input terminal is constantly greater than the voltage of the positive input terminal, and the comparator Z 1 Continuously output high impedance state, thereby the triode B 1 Under normal operation, the secondary current supplement circuit is switched to C when the device is switched on 1 、C gs Charging to increase the driving capability of the circuit; when the required drive energy is small, comparator Z is given 1 The positive input terminal is at high level to make the drive signal of the negative input terminal constantly less than the voltage of the positive input terminal, and a comparator Z 1 Output low level, supply V cc2 Pulled to ground to make the triode B 1 The secondary current supplement circuit is disconnected from the drive circuit when the secondary current supplement circuit cannot be switched on.
Compared with the prior art, the invention has the beneficial effects that:
1. the invention can avoid voltage spike when in starting and reduce voltage oscillation when in cutting off, and simulation results show that the invention can avoid voltage spike when in starting, increase speed when in starting and increase driving voltage.
2. The invention introduces two sections of driving circuits, and solves the problems of reduced turn-on speed and insufficient driving voltage caused by the fact that voltage spikes are restrained on the grid-source parallel capacitor.
3. The comparator circuit introduced by the invention leaves more possibilities for the expansion of the circuit, and the number of the driving circuits can be adjusted according to the requirements by combining the digital control circuit, so that the driving capability of the circuit is changed.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the prior art descriptions will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic diagram of a GaN HEMT driving circuit structure applied to a flyback circuit of the present invention.
FIG. 2 is a diagram of the voltage waveform and the switching waveform during the initial period of the present invention.
FIG. 3 is a waveform diagram of the driving circuit according to the present invention.
FIG. 4 is a simulation waveform diagram of the opening process of the GaN HEMT device of the invention.
Fig. 5 is a simulation waveform diagram of a driving circuit when a secondary current supplement circuit is not adopted.
FIG. 6 is a simulated waveform diagram of the GaN HEMT device during the turn-on process without the secondary current compensation circuit.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the following embodiments, and it should be understood that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in FIGS. 1 to 6, the multi-stage GaN HEMT driving circuit includes a driving power supply V cc1 N-type MOSFET Q 1 And P-type MOSFET Q 2 Push-pull circuit formed by series connection and resistor R 3 And a diode D 1 A charge-discharge loop formed by series connection; wherein the resistance R 4 For current-limiting resistors in charge-discharge circuits, power supply V cc3 Triode B 1 And a resistance R 5 In series, wherein the power supply V cc2 Resistance R 6 A triode pull-up circuit connected in series to form a two-stage current supplement circuit, and a comparator Z 1 A comparator circuit for forming an expansion circuit; capacitor C 1 One end of the grid is connected with the grid of the GAN HEMT, and the other end of the grid is connected with the source of the GAN HEMT;
input resistance R 1 And an input resistor R 2 Connected in parallel and input a resistance R 1 One end connected with external PWM input signal, and the other end connected with N-type MOSFET Q 1 The grid electrodes are connected; input resistance R 2 One terminal and input resistor R 1 Connected in parallel, and the other end is connected with a P-type MOSFET Q 2 The grids are connected;
resistance R 4 One terminal and a resistor R 3 The other end of the grid is connected with the grid of the GAN HEMT; resistance R 3 One terminal and Q 1 、Q 2 The other end is connected with a diode D 1 Connecting the cathodes; diode D 1 The anode is connected with the grid of the GAN HEMT;
a push-pull circuit: n-type MOSFET Q 1 Drain electrode and driving power supply V cc1 Connected with source electrode of P-type MOSFET Q 2 Drain connected to the input resistor R, and gate connected to the input resistor R 1 Connecting; p-type MOSFET Q 2 Drain and N-type MOSFET Q 1 Source connected to the input resistor R, gate connected to the input resistor R 2 The source electrodes are grounded;
the secondary current supplement circuit comprises a triode B 1 And is connected to the triode B 1 Resistance R between emitter and GaN HEMT source 5 And is connected to the triode B 1 Base and source V CC2 R between 6 And is connected to the triode B 1 Collector power supply V CC3 (ii) a Wherein, the triode B 1 Collector and power supply V cc3 Connected to an emitter electrode and a resistor R 5 Connected to a base electrode and a resistor R 6 Connecting; resistance R 5 One end of the transistor is connected with a triode B 1 The emitter is connected, and the other end of the emitter is connected with the grid of the GAN HEMT; resistance R 6 One end of the transistor is connected with a triode B 1 Base electrode connected to power supply V cc2 Connecting;
comparator circuit for an expander circuit, comprising a comparator Z 1 And a resistance R 6 (ii) a Wherein the comparator Z 1 Negative input terminal and resistor R 1 、R 2 Connected in parallel with an external PWM input signal, and having a positive input terminal connected with a reference voltage V ref Connected with the output end of the resistor R 6 One end is connected with the power supply V cc2 Connecting;
the working principle of the secondary current supplement circuit is as follows: given comparator Z 1 A reference voltage V ref When the voltage of the negative input end is higher than the reference voltage V in the turn-on stage of the device ref The comparator outputs a high impedance state, at which time the power supply V cc2 And a resistance R 6 Providing a pull-up current to enable transistor B 1 Power-on, power supply V cc3 By means of a triode B 1 And a resistance R 5 To the capacitor C 1 、C g Charging when the capacitor C is charged 1 、C gs The voltage at two ends approaches to a power supply V cc2 Time of voltage (V) cc2 -V gs About 0.7V), transistor B due to the voltage clamping effect of the transistor 1 Turning off the secondary current supplement circuit, and stopping the working state of the secondary current supplement circuit;
the use principle of the comparator circuit for the expansion circuit is as follows: the number of the secondary current supplement circuits is selected according to the actual condition of the switching device, and when the required driving energy is large, the comparator Z can be given in a digital control mode 1 The positive input terminal of the comparator is at a low level, so that the driving signal of the negative input terminal is constantly greater than the voltage of the positive input terminal, and the comparator Z 1 Continuously output high impedance state, thereby the triode B 1 Under normal operation, the secondary current supplement circuit is switched to C when the device is switched on 1 、C gs And charging is carried out, so that the circuit driving capacity is increased. When the required drive energy is small, comparator Z is given 1 The positive input terminal is at high level to make the drive signal of the negative input terminal constantly less than the voltage of the positive input terminal, and a comparator Z 1 Output low electricityFlat, general power supply V cc2 Pulled to ground to make the triode B 1 The secondary current supplement circuit is disconnected from the drive circuit when the secondary current supplement circuit cannot be switched on;
FIG. 2 shows the drive voltage waveform and the switching waveform of the present invention during one cycle, where S 1 For the upper bridge arm drive signal of the push-pull circuit, S 2 For the lower arm drive signal of the push-pull circuit, V gs Is a gate-source voltage waveform, i.e., a drive voltage waveform.
At t 0 -t 1 Period of time, S 1 Opening, S 2 Turn off, current through Q 1 -R 4 Respectively to the capacitor C 1 、C gs The charging raises the driving voltage to the rated voltage.
At t 1 -t 2 Period of time, S 1 、S 2 And meanwhile, the device is turned off, and the voltage at the two ends of the grid source of the device is maintained at the rated driving voltage.
At t 3 Time of day, S 1 Off, S 2 On and current flows through D 1 -R 5 -Q 2 And R 3 -Q 2 Two road pairs C 1 、C gs Discharge, large capacitance C 1 The function of restraining voltage oscillation during turn-off is achieved.
At t 3 -t 4 Period of time, S 2 Is completely opened, S 1 Complete cut-off of C 1 、C gs Discharging until the voltage is 0V, and keeping.
At t 4 -t 5 Period of time, S 1 、S 2 Are all turned off, and the gate-source voltage continues to be kept at 0V.
At t 5 -t 6 Period of time, S 1 Opening, S 2 Completely off and current through Q 1 -R 3 And V cc3 -B 1 -R 4 Respectively to C 1 、C gs Charging until the gate-source voltage rises to approach V cc2 。
At t 6 At any moment, the current branch V is supplemented due to the clamping of the triode cc3 -B 1 -R 4 And (5) disconnecting.
At t 6 -t 7 Time period, current passing through Q 1 -R 3 To C 1 、C gs And charging until the gate-source voltage rises to the rated voltage.
In this embodiment, the secondary current supplement circuit may be expanded in number, and may be adjusted to increase or decrease the number of the secondary current supplement circuit according to the actual current required for driving the switching device through the selection of the comparator expansion circuit and the selection of the digital control system.
In this embodiment, the comparator circuit may be used as an interface for feeding back a signal, and predict the operating condition of the switching device by collecting the real-time state of the switching device, such as temperature, and use the fed-back signal as a signal for controlling the on/off of the secondary current compensation circuit.
The working principle of the invention is as follows:
when the multi-stage GaN HEMT driving circuit works, the number of the secondary current supplement circuits is selected according to the actual condition of the switching device, and when the required driving energy is large, the comparator Z can be given in a digital control mode 1 The positive input terminal of the comparator Z is at a low level, so that the driving signal at the negative input terminal is constantly greater than the voltage at the positive input terminal 1 Continuously output high impedance state, thereby the triode B 1 Normally working, the secondary current supplement circuit is switched on to C 1 、C gs And charging is carried out, so that the circuit driving capacity is increased. When the required driving energy is small, the comparator Z is given 1 The positive input terminal is at high level, so that the drive signal at the negative input terminal is constantly less than the voltage at the positive input terminal, and a comparator Z 1 Output low level, supply V cc2 Pulled to ground to make the triode B 1 The secondary current supplement circuit is disconnected from the drive circuit when the secondary current supplement circuit cannot be switched on.
In the description herein, references to the description of "one embodiment," "an example," "a specific example" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The preferred embodiments of the invention disclosed above are intended to be illustrative only. The preferred embodiments are not intended to be exhaustive or to limit the invention to the precise forms disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention. The invention is limited only by the claims and their full scope and equivalents.
Claims (6)
1. The multistage GaNHEMT drive circuit is characterized by comprising a drive power supply V cc1 N-type MOSFET Q 1 And P-type MOSFET Q 2 Push-pull circuit and resistor R formed by series connection 3 And a diode D 1 A charge-discharge loop and a resistor R connected in series 4 And a capacitor C 1 ；
Wherein the resistance R 4 For current-limiting resistors of charge-discharge circuits, power supply V cc3 Triode B 1 And a resistance R 5 In series, wherein the power supply V cc2 And a resistor R 6 A triode pull-up circuit is connected in series to form a secondary current supplement circuit; comparator Z 1 A comparator circuit for forming an expansion circuit; capacitor C 1 One end of the grid is connected with the grid of the GAN HEMT, and the other end of the grid is connected with the source of the GAN HEMT;
wherein the secondary current supplement circuit comprises a triode B 1 And is connected to the triode B 1 Resistance R between emitter and GaN HEMT source 5 Connected to the triode B 1 Base and source V CC2 Resistance R between 6 And is connected to the triode B 1 Collector source V CC3 (ii) a Wherein, the triode B 1 Collector and power supply V cc3 Connected to an emitter electrode and a resistor R 5 Connected to a base electrode and a resistor R 6 Connecting; resistance R 5 One end of the transistor is connected with the triodeB 1 The emitter is connected, and the other end of the emitter is connected with the grid of the GAN HEMT; resistance R 6 One end of the transistor is connected with a triode B 1 Base electrode connected to power supply V cc2 Connecting;
the comparator circuit comprises a comparator Z 1 And a resistance R 6 (ii) a Wherein the comparator Z 1 Negative input terminal and resistor R 1 、R 2 Connected in parallel with an external PWM input signal, and having a positive input terminal connected with a reference voltage V ref Connected with the output end of the resistor R 6 One end is connected with the power supply V cc2 Are connected.
2. The multi-stage GaN HEMT drive circuit of claim 1, wherein said push-pull circuit: n-type MOSFET Q 1 Drain electrode and driving power supply V cc1 Connected with source electrode of P-type MOSFET Q 2 Drain connected to the input resistor R, and gate connected to the input resistor R 1 Connecting; p-type MOSFET Q 2 Drain and N-type MOSFET Q 1 Source connected to the input resistor R, gate connected to the input resistor R 2 Connected and the source is grounded.
3. The multi-stage GaN HEMT drive circuit of claim 2, wherein an input resistor R 1 And an input resistor R 2 Connected in parallel and input a resistance R 1 One end connected with external PWM input signal and the other end connected with N-type MOSFET Q 1 The grid electrodes are connected; input resistance R 2 One terminal and input resistor R 1 Connected in parallel, and the other end is connected with a P-type MOSFET Q 2 The gates are connected.
4. The multi-stage GaN HEMT drive circuit of claim 1, wherein a resistance R 4 One terminal and a resistor R 3 Parallel connection, the other end is connected with a GANHEMT grid; resistance R 3 One terminal and Q 1 、Q 2 The other end is connected with a diode D 1 Connecting the cathodes; diode D 1 The anode is connected to the gate of the GAN HEMT.
5. A working method of a multi-stage GaN HEMT driving circuit,the multi-stage GaN HEMT driving circuit applied to any one of claims 1-4, wherein the two-stage current supplement circuit works in a way that: given comparator Z 1 A reference voltage V ref When the voltage of the negative input end is higher than the reference voltage V in the turn-on stage of the device ref The comparator outputs a high impedance state, at which time the power supply V cc2 And a resistance R 6 Providing a pull-up current to enable transistor B 1 Power-on, power supply V cc3 Via a triode B 1 And a resistance R 5 To the capacitor C 1 、C gs Charging; when the capacitance C 1 、C gs The voltage at two ends approaches to a power supply V cc2 At voltage, the transistor B is clamped by the voltage of the transistor 1 And turning off the secondary current supplement circuit and quitting the working state.
6. The operating method of the multi-stage GaN HEMT drive circuit of claim 5, wherein the comparator circuit operates by: the number of the secondary current supplement circuits is selected according to the actual condition of the switching device, and when the required driving energy is large, the comparator Z is given in a digital control mode 1 The positive input terminal of the comparator is at a low level, so that the driving signal of the negative input terminal is constantly greater than the voltage of the positive input terminal, and the comparator Z 1 Continuously output high impedance state, thereby the triode B 1 Under normal operation, the secondary current supplement circuit is switched to C when the device is switched on 1 、C gs Charging to increase the circuit driving capacity; when the required driving energy is small, the comparator Z is given 1 The positive input terminal is at high level, so that the drive signal at the negative input terminal is constantly less than the voltage at the positive input terminal, and a comparator Z 1 Output low level, supply V cc2 Pulled to ground to make the triode B 1 The secondary current supplement circuit is disconnected from the drive circuit when the secondary current supplement circuit cannot be switched on.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003116264A (en) * | 2001-10-05 | 2003-04-18 | Matsushita Electric Ind Co Ltd | Drive circuit of semiconductor switching device |
| CN109004813A (en) * | 2018-07-27 | 2018-12-14 | 深圳英飞源技术有限公司 | A kind of metal-oxide-semiconductor driving circuit inhibiting driving voltage spike |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5444118B2 (en) * | 2010-05-18 | 2014-03-19 | 株式会社東芝 | Switching element drive circuit |
| JP5354044B2 (en) * | 2012-03-12 | 2013-11-27 | 日産自動車株式会社 | Driving circuit for driving a voltage driven element |
| JP6299416B2 (en) * | 2014-05-19 | 2018-03-28 | 日産自動車株式会社 | Drive circuit system |
| JP6229604B2 (en) * | 2014-06-30 | 2017-11-15 | 株式会社デンソー | Semiconductor switching element control circuit |
| CN105529909B (en) * | 2014-09-30 | 2018-06-29 | 华润矽威科技（上海）有限公司 | Power tube gate drive circuit and drive part by part method |
| US10404251B2 (en) * | 2016-05-04 | 2019-09-03 | The Hong Kong University Of Science And Technology | Power device with integrated gate driver |
| CN110190838A (en) * | 2018-12-05 | 2019-08-30 | 徐州中矿大传动与自动化有限公司 | A kind of SiC MOSFET short-circuit protection circuit and method based on short circuit current inhibition |
| US11088680B2 (en) * | 2019-07-19 | 2021-08-10 | University Of Florida Research Foundation, Incorporated | Method and apparatus for eliminating crosstalk effects in high switching-speed power modules |
| CN110868073B (en) * | 2019-08-26 | 2021-04-13 | 哈尔滨工业大学 | Series connection SiC MOSFET drive circuit based on multi-winding transformer coupling |
| CN111181362B (en) * | 2020-01-19 | 2021-07-13 | 山东大学 | High-interference-resistance SiC MOSFET (Metal-oxide-semiconductor field Effect transistor) driving circuit and working method |
| CN113315353B (en) * | 2021-06-24 | 2022-04-01 | 南通大学 | SiC MOSFET parallel driving circuit with gate-source impedance dynamically adjusted and active current sharing |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003116264A (en) * | 2001-10-05 | 2003-04-18 | Matsushita Electric Ind Co Ltd | Drive circuit of semiconductor switching device |
| CN109004813A (en) * | 2018-07-27 | 2018-12-14 | 深圳英飞源技术有限公司 | A kind of metal-oxide-semiconductor driving circuit inhibiting driving voltage spike |
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| CN114499475A (en) | 2022-05-13 |
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