CN105449997A - A power switch tube isolated gate drive circuit for a power converter - Google Patents

A power switch tube isolated gate drive circuit for a power converter Download PDF

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Publication number
CN105449997A
CN105449997A CN201610039064.1A CN201610039064A CN105449997A CN 105449997 A CN105449997 A CN 105449997A CN 201610039064 A CN201610039064 A CN 201610039064A CN 105449997 A CN105449997 A CN 105449997A
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CN
China
Prior art keywords
resistance
capacitance
electric capacity
switch pipe
diode
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Pending
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CN201610039064.1A
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Chinese (zh)
Inventor
孙伟锋
朱俊杰
俞居正
钱钦松
卜爱国
陆生礼
时龙兴
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Southeast University
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Southeast University
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Priority to CN201610039064.1A priority Critical patent/CN105449997A/en
Publication of CN105449997A publication Critical patent/CN105449997A/en
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/0048Circuits or arrangements for reducing losses
    • H02M1/0054Transistor switching losses
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

A power switch tube isolated gate drive circuit for a power converter comprises a pulse width modulation driver, an isolation driving transformer T, a blocking capacitor Cb, a capacitor C1, a diode D and a driven switch tube Q which constitute an isolated gate drive circuit in the prior art. According to the invention, on the basis of the above circuit, a resistor R1 in parallel with the capacitor C1 is additionally installed; a capacitor C2 is additionally installed to be in parallel connection with a resistor R2 and connected to a cathode of the diode D; after the capacitor C2 and the resistor R2 are in parallel connection, the other end of the capacitor C2 is connected between the capacitor C1 and a grid electrode of the driven switch tube Q. The capacitor C2, the resistor R2 and the diode D form a negative voltage source to provide a stable negative voltage in turn-off of the switch tube Q. Accidental switch-on of the switch tube in the switch-off process because of various crosstalks is prevented, and the reliability of the system is raised.

Description

A kind of power switch pipe isolated gate drive circuit of power inverter
Technical field
The present invention relates to the power inverter in switching circuit technology, particularly a kind of power switch pipe isolated gate drive circuit of power inverter.
Background technology
Modern electronic equipment proposes the requirement of the aspects such as light and high efficiency to its electric supply installation (power inverter), the power density of power inverter and switching frequency are improved constantly, and more excellent new device such as the isolated gate FET (IGBT) etc. of the bridge type topology that power capacity is larger, performance is widely used.Due to material restriction, traditional silicon-based power devices has approached the intrinsic limit even reaching its material in many aspects, and broad stopband device is given birth to as the application such as carborundum (SiC), gallium nitride (GaN).These propose more all to the drive circuit of power inverter, more efficiently, the higher requirement such as more reliable.In bridge type topology, produce great dv/dt when upper pipe closes section, this may cause opening by mistake of lower pipe to open, and cause pipe to be up and down short-circuited straight-through, therefore be necessary at power tube blocking interval as it provides reverse grid voltage; And IGBT blocking interval, high-frequency oscillation signal can be produced in grid circuit, these signals gently then can make IGBT be in micro-logical state, increase the reverse grid voltage power consumption of power tube, heavy then upper and lower tube short circuit will be made to lead directly to, therefore be necessary for the grid voltage that IGBT provides reverse, accelerate the turn off process of IGBT; And the turn-on characteristics under the intrinsic normality of broad stopband device, determine that its grid needs certain negative pressure, make switching tube keep turning off.
Fig. 1 is existing a kind of isolated drive circuit, comprises pulse-width-modulation driver, former limit capacitance C b, isolating transformer T, diode D, secondary capacitance C 1, the voltage direction on all components and parts as shown in Figure 1.During the steady operation of drive circuit shown in Fig. 1, the voltage waveform of each point is see Fig. 2, and wherein Vi is the output voltage waveforms of pulse-width-modulation driver, and when supposing stable state, duty ratio is d, and amplitude is M; V 1and V 2electric capacity C respectively bwith electric capacity C 1the voltage waveform at two ends, amplitude is dM; Vp and Vs is the former limit of transformer T and secondary voltage waveform respectively, and Vg is the voltage waveform of isolated drive circuit output, and supposes that the former limit winding of isolating transformer T and the turn ratio of vice-side winding are 1:1.The advantage of this isolated drive circuit is that output level and duty ratio d have nothing to do, and duty ratio can be greater than 0.5.But this magnetic isolation drive circuit also has shortcoming clearly, isolation drive transformer T can produce certain leakage inductance due to the impact of technique for coiling, this leakage inductance can produce resonance with capacitance turning on and off instantaneously, finally cause the output level of drive circuit superposes certain due to voltage spikes, due to voltage spikes may cause the misoperation of power switch pipe, and control was lost efficacy.Moreover, the excessive grid of power tube that also can cause of the resonance potential spike that leakage inductance causes is breakdown, for more easily breakdown broad stopband device, especially needs the grid when device ends to there is a negative pressure.
Summary of the invention
The invention reside in the deficiency overcoming prior art, a kind of power switch pipe isolated gate drive circuit of power inverter is provided, a negative pressure can be produced when driven power switch pipe turns off, prevent by opening by mistake of driving power switching tube logical, thus improve the reliability of system.
For achieving the above object, the technical solution used in the present invention is as follows: a kind of power switch pipe isolated gate drive circuit of power inverter, comprises the pulse-width-modulation driver, the former limit capacitance C that produce control signal b, isolating transformer T, secondary capacitance C 1, diode D and driven switching tube Q, the output plus terminal of pulse-width-modulation driver is by capacitance C bconnect the Same Name of Ends of the former avris of isolating transformer T, the non-same polarity of the former avris of isolating transformer T connects the output negative terminal of pulse-width-modulation driver, and the Same Name of Ends of isolating transformer T secondary side connects capacitance C 1one end, capacitance C 1the other end connect diode D negative electrode and by the grid of driving switch pipe Q, linked together by the source electrode of driving switch pipe Q and the anode of diode D and the non-same polarity of isolating transformer T secondary side, it is characterized in that:
At capacitance C 1two ends set up parallel resistance R 1, and set up electric capacity C 2with resistance R 2parallel connection, electric capacity C 2with resistance R 2one end after parallel connection connects the negative electrode of diode D, electric capacity C 2with resistance R 2the other end after parallel connection and above-mentioned capacitance C 1the other end and linked together by the grid of driving switch pipe Q; When driven switching tube Q turns off, diode D, electric capacity C 2with resistance R 2form negative voltage generating circuit and pass through resistance R 1with resistance R 2dividing potential drop adjustment negative pressure size, to avoid misleading of driven switching tube Q.
Described electric capacity C 1and electric capacity C 2numerical value much larger than by the grid capacitance of driving switch pipe Q, be required to be by more than 20 times of driving switch pipe Q grid capacitance, resistance R 1and resistance R 2numerical value is all adopted to be the large resistance of hundreds of ohm.。
Advantage of the present invention and remarkable result:
1, when driven metal-oxide-semiconductor turns off, metal-oxide-semiconductor gate charge is often released by the earth by conventional drive scheme completely, or consumed by the grid source dead resistance of grid source bleeder resistance and metal-oxide-semiconductor, which not only adds the loss of drive circuit, and also reduce the reliability of power MOS pipe.The present invention on the basis of existing technology, adds an electric capacity C by the negative electrode series connection at diode D 2with resistance R 2parallel-connection structure, constitute stable negative pressure source, simultaneously realize isolation and negative pressure grid drive, prevent by opening by mistake of driving element logical, thus raising system reliability, meet the driving requirement of broad stopband device simultaneously.
2, structure of the present invention is simple, does not need to introduce new power supply or drive control signal, and the isolated gate that can realize producing fixing negative pressure drives.
3, the present invention can adapt to the fixing drive circuit of various duty ratio.
4, the present invention is in whole driving process, electric capacity C 1with electric capacity C 2on voltage change hardly, driving switch pipe Q open and turn off electric current directly by electric capacity C 1and C 2there is provided, do not need through resistance of overdriving, reduce the driving loss of switching tube.
Accompanying drawing explanation
Fig. 1 is existing a kind of isolated drive circuit figure;
Fig. 2 is the key operation waveforms of existing a kind of isolated drive circuit;
Fig. 3 is a kind of isolated drive circuit figure producing fixing negative pressure of the present invention;
Fig. 4 is the key operation waveforms of the isolated drive circuit that the present invention proposes.
Embodiment
Below in conjunction with accompanying drawing, technology of the present invention is described in detail.
Referring to Fig. 3, the present invention includes the pulse-width-modulation driver of the generation control signal identical with prior art Fig. 1, isolation drive transformer T, former limit capacitance C b, secondary capacitance C 1, diode D and driven switching tube Q, the voltage direction on each components and parts is as shown in Figure 1,3.The output plus terminal of pulse-width-modulation driver is by capacitance C bconnect the Same Name of Ends of the former avris of isolating transformer T, the non-same polarity of the former avris of isolating transformer T connects the output negative terminal of pulse-width-modulation driver, and the Same Name of Ends of isolating transformer T secondary side connects capacitance C 1one end, capacitance C 1the other end connect diode D negative electrode and by the grid of driving switch pipe Q, linked together by the source electrode of driving switch pipe Q and the anode of diode D and the non-same polarity of isolating transformer T secondary side.Pulse-width-modulation driver for generation of an initial drive singal (duty ratio of its control signal produced immobilizes), capacitance C bfor the DC component in this drive singal of filtering, isolating transformer T be used for by the signal transmission of transformer primary side to secondary, realize simultaneously isolate, electric capacity C 1for keeping resistance R 1on voltage stable in switching process.It is d that pulse-width-modulation driver produces a duty ratio, and amplitude is the square wave driving signal of M.Capacitance C bthe DC component of this drive singal that pulse modulation driver is produced to filtering, and makes capacitance C bon voltage be always dM.The turn ratio due to the former secondary of isolating transformer T is 1:1, by isolating transformer T, duty ratio can be similarly d afterwards, and forward amplitude is (1-d) M, and negative sense amplitude is the square-wave signal of dM is delivered to transformer secondary from transformer primary side.
The present invention on the basis of Fig. 1, at secondary side capacitance C 1two ends set up parallel resistance R 1, and set up electric capacity C 2with resistance R 2parallel connection, electric capacity C 2with resistance R 2one end after parallel connection connects the negative electrode of diode D, electric capacity C 2with resistance R 2the other end after parallel connection and above-mentioned capacitance C 1the other end and linked together by the grid of driving switch pipe Q.When driven switching tube Q turns off, diode D, electric capacity C 2with resistance R 2form negative voltage generating circuit and pass through resistance R 1with resistance R 2dividing potential drop adjustment negative pressure size, misleading of driven switching tube Q can be avoided.Electric capacity C 1and electric capacity C 2much larger than by the grid capacitance of driving switch pipe Q (being generally more than 20 times of the grid capacitance of switching tube Q).Simultaneously for the resistance R of dividing potential drop 1and resistance R 2all relatively large (being generally hundreds of ohm), the electric current flowing through these two resistance is less.Therefore electric capacity C in the course of the work 1and electric capacity C 2the voltage at two ends changes all hardly.
As transformer secondary voltage V sbe negative, time amplitude is dM, now Vg is negative, diode D conducting, now resistance R 1with resistance R 2series connection carries out dividing potential drop, resistance R 1voltage swing is above R 1* dM/ (R 1+ R 2), resistance R 2voltage is above R 2* dM/ (R 1+ R 2).Therefore now the voltage of Vg is negative, and its amplitude is R 2* dM/ (R 1+ R 2).When transformer secondary voltage is just, time amplitude is (1-d) M, just be by the voltage Vg between driving switch pipe grid source, now diode D ends, and the voltage being isolating transformer transformer T secondary by the voltage Vg between driving switch pipe Q grid source adds electric capacity C 1on voltage.
Due to electric capacity C 1with electric capacity C 2the gate-source parasitic capacitance of phase switch tube is comparatively large, electric capacity C 1with electric capacity C 2on voltage can not due to give switching tube gate-source parasitic capacitance discharge and recharge and there is obvious change.Simultaneously for the resistance R of dividing potential drop 1with resistance R 2also comparatively large, electric capacity C 1and electric capacity C 2can not due to resistance R 1with resistance R 2form self discharge loop and produce obvious change in voltage.Therefore can think, in the process of whole switch drive, electric capacity C 1and electric capacity C 2on voltage all remain unchanged.Therefore electric capacity C 1on voltage V 2be always R 1* dM/ (R 1+ R 2), namely when transformer secondary voltage is resistance R time negative 1dividing potential drop.
As the voltage V of isolating transformer T secondary sfor just, time amplitude is (1-d) M, the voltage at Vg two ends is just being, diode D ends.Now the voltage of Vg is that the voltage of isolating transformer T secondary adds electric capacity C 1the voltage at two ends, its amplitude is (1-d) M+R 1* dM/ (R 1+ R 2).
So just can be supplied to by driving switch pipe Q duty ratio is d, and forward amplitude is (1-d) M+R 1* dM/ (R 1+ R 2), negative sense amplitude is R 2* dM/ (R 1+ R 2) square wave driving signal, the initial control signal that its phase place and pulse modulation driver produce is identical.
Under the condition of given drive singal duty ratio d, isolated gate drive circuit of the present invention can pass through regulating resistance R 1and resistance R 2size, produce the drive singal needed for.The amplitude size of this drive singal malleation and negative pressure is all adjustable.As long as the duty ratio d of drive singal fixes in the course of the work, the malleation of the drive singal produced and negative pressure also can keep stable.
The key operation waveforms of each node of isolated gate drive circuit of the present invention as shown in Figure 4.Wherein Vi is the square-wave signal that pulse-width-modulation driver exports, and its cycle is T, and duty ratio is d, and amplitude is M; V 1sized by voltage for capacitance Cb two ends, sized by be the direct current signal of dM; Vp and Vs is respectively the voltage of the former limit of isolating transformer T and secondary, and they are the square-wave signal that duty ratio is d, and forward amplitude is (1-d) M, and negative sense amplitude is dM; V 2for electric capacity C1 both end voltage, sized by be R 1* dM/ (R 1+ R 2) direct current signal; Vg be by the grid source of driving switch pipe Q between voltage, for duty ratio is the square-wave signal of d, its forward amplitude is forward amplitude is (1-d) M+R 1* dM/ (R 1+ R 2), negative sense amplitude is R 2* dM/ (R 1+ R 2).Waveform in comparison diagram 2 can find, finally creating at Vg two ends just has negative signal, but not in Fig. 2 anon-normal that is zero signal, simultaneously in Fig. 4, the forward amplitude of Vg two end signal and negative sense amplitude all can pass through R 1and R 2regulate.

Claims (2)

1. a power switch pipe isolated gate drive circuit for power inverter, comprises the pulse-width-modulation driver, the former limit capacitance C that produce control signal b, isolating transformer T, secondary capacitance C 1, diode D and driven switching tube Q, the output plus terminal of pulse-width-modulation driver is by capacitance C bconnect the Same Name of Ends of the former avris of isolating transformer T, the non-same polarity of the former avris of isolating transformer T connects the output negative terminal of pulse-width-modulation driver, and the Same Name of Ends of isolating transformer T secondary side connects capacitance C 1one end, capacitance C 1the other end connect diode D negative electrode and by the grid of driving switch pipe Q, linked together by the source electrode of driving switch pipe Q and the anode of diode D and the non-same polarity of isolating transformer T secondary side, it is characterized in that:
At capacitance C 1two ends set up parallel resistance R 1, and set up electric capacity C 2with resistance R 2parallel connection, electric capacity C 2with resistance R 2one end after parallel connection connects the negative electrode of diode D, electric capacity C 2with resistance R 2the other end after parallel connection and above-mentioned capacitance C 1the other end and linked together by the grid of driving switch pipe Q; When driven switching tube Q turns off, diode D, electric capacity C 2with resistance R 2form negative pressure produce source and pass through resistance R 1with resistance R 2dividing potential drop adjustment negative pressure size, avoid misleading of driven switching tube Q.
2. the power switch pipe isolated gate drive circuit of power inverter according to claim 1, is characterized in that: electric capacity C 1and electric capacity C 2numerical value much larger than by the grid capacitance of driving switch pipe Q, be required to be by more than 20 times of driving switch pipe Q grid capacitance, resistance R 1and resistance R 2numerical value is all adopted to be the large resistance of hundreds of ohm.
CN201610039064.1A 2016-01-20 2016-01-20 A power switch tube isolated gate drive circuit for a power converter Pending CN105449997A (en)

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106026721A (en) * 2016-07-19 2016-10-12 东南大学 Grid drive circuit of ZCS full bridge converter employing SiC power tubes
CN106208711A (en) * 2016-07-19 2016-12-07 东南大学 A kind of grid drive circuit of the bridge power transducer using SiC power tube
CN106787633A (en) * 2016-12-16 2017-05-31 广州金升阳科技有限公司 Isolated drive circuit and isolation drive system
CN107800293A (en) * 2016-08-29 2018-03-13 丰郅(上海)新能源科技有限公司 A kind of drive circuit and the photovoltaic power optimization system using the drive circuit
CN107809177A (en) * 2017-09-25 2018-03-16 南京航空航天大学 A kind of adjustable drive circuit of isolated form output voltage
CN109450264A (en) * 2018-10-29 2019-03-08 南京航空航天大学 One kind recommending mode of resonance silicon carbide power tube drive circuit and its control method
CN109980905A (en) * 2019-04-15 2019-07-05 湖南德雅坤创科技有限公司 Clutter reduction circuit, driving circuit and the bridge converter of sic filed effect pipe
CN112394228A (en) * 2020-11-17 2021-02-23 青岛聚能创芯微电子有限公司 Gallium nitride power device on-resistance test circuit

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202268797U (en) * 2011-09-16 2012-06-06 天水七四九电子有限公司 Circuit for improving performance of isolated driving circuit
CN103095108A (en) * 2013-02-25 2013-05-08 南京航空航天大学 Magnet isolation drive circuit
CN103414354A (en) * 2013-07-16 2013-11-27 燕山大学 Power switch device pulse transformer isolation driving circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202268797U (en) * 2011-09-16 2012-06-06 天水七四九电子有限公司 Circuit for improving performance of isolated driving circuit
CN103095108A (en) * 2013-02-25 2013-05-08 南京航空航天大学 Magnet isolation drive circuit
CN103414354A (en) * 2013-07-16 2013-11-27 燕山大学 Power switch device pulse transformer isolation driving circuit

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106026721A (en) * 2016-07-19 2016-10-12 东南大学 Grid drive circuit of ZCS full bridge converter employing SiC power tubes
CN106208711A (en) * 2016-07-19 2016-12-07 东南大学 A kind of grid drive circuit of the bridge power transducer using SiC power tube
CN106026721B (en) * 2016-07-19 2019-06-18 东南大学 A kind of gate drive circuit of the ZCS full-bridge converter using SiC power tube
CN107800293B (en) * 2016-08-29 2020-09-08 丰郅(上海)新能源科技有限公司 Drive circuit and photovoltaic power optimization system adopting same
CN107800293A (en) * 2016-08-29 2018-03-13 丰郅(上海)新能源科技有限公司 A kind of drive circuit and the photovoltaic power optimization system using the drive circuit
CN106787633A (en) * 2016-12-16 2017-05-31 广州金升阳科技有限公司 Isolated drive circuit and isolation drive system
CN107809177A (en) * 2017-09-25 2018-03-16 南京航空航天大学 A kind of adjustable drive circuit of isolated form output voltage
CN109450264A (en) * 2018-10-29 2019-03-08 南京航空航天大学 One kind recommending mode of resonance silicon carbide power tube drive circuit and its control method
CN109980905A (en) * 2019-04-15 2019-07-05 湖南德雅坤创科技有限公司 Clutter reduction circuit, driving circuit and the bridge converter of sic filed effect pipe
CN112394228A (en) * 2020-11-17 2021-02-23 青岛聚能创芯微电子有限公司 Gallium nitride power device on-resistance test circuit

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Application publication date: 20160330