CN110224688A - A kind of gallium nitride power device drive system - Google Patents
A kind of gallium nitride power device drive system Download PDFInfo
- Publication number
- CN110224688A CN110224688A CN201910378095.3A CN201910378095A CN110224688A CN 110224688 A CN110224688 A CN 110224688A CN 201910378095 A CN201910378095 A CN 201910378095A CN 110224688 A CN110224688 A CN 110224688A
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- China
- Prior art keywords
- gallium nitride
- power device
- nitride power
- resistance
- grid
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/011—Modifications of generator to compensate for variations in physical values, e.g. voltage, temperature
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/017—Adjustment of width or dutycycle of pulses
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/53—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
- H03K3/57—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback the switching device being a semiconductor device
Abstract
The present invention relates to a kind of gallium nitride power device drive system, the trigger signal of the pwm control circuit of the system loads the input terminal in push-pull type driving chip；The drain electrode of the upper tube of push-pull type driving chip connects positive voltage, one end of source electrode stable connection resistance and limitation peak resistance, the grid of the other end connection gallium nitride power device of steady resistance, the source electrode that the other end of peak resistance connects the down tube of push-pull type driving chip by turning off resistance is limited, while passing through the grid that speed-up capacitor connects gallium nitride power device；The down tube of push-pull type driving chip and the source electrode of gallium nitride power device connect power ground；Pull down resistor is connected between the grid and source electrode of gallium nitride power device.
Description
Technical field
The present invention relates to a kind of drive systems of gallium nitride power device.
Background technique
Gallium nitride device (GaN-Tr) has high electron mobility, pole as wide band gap semiconductor device of new generation
Low on state resistance, and gate charge is far smaller than the same as voltage class silicon device.As technology graduallys mature in recent years, yields
Constantly rise, gallium nitride power device progresses into the golden period of application, regarded in the transformation of electrical energy occasion of many middle low-voltages
For the substitute of traditional silicon device.Gallium nitride device gate charge is smaller, it is meant that can quickly fill to it under high frequency
Stream takes out stream, ensure that its high switching speed, while drive loss is smaller；Parasitic capacitance is small, inducts on it under high frequency
Peak voltage is smaller, can effectively reduce electromagnetic interference, significant for the operation is stable of integrated circuit, and reduces rear class filter
The workload of wave.Since the threshold voltage of the grid of GaN-Tr is very low, representative value is between 1.2V-1.6V.When GaN-Tr is applied to
When high frequency, it is logical that the oscillation spike that the easy parasitic inductance by circuit generates opens by mistake it.Gallium nitride device is being applied to entirely
When bridge or half-bridge topology, threshold voltage of the grid is too low, same bridge arm device be easy to be disturbed and generate open by mistake it is logical to make
Device is burnt at short circuit.
Can the quality of driving circuit design, which be largely fixed device and work normally and reach expected performance, refers to
Mark.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of gallium nitride power device drive system, which be can be avoided
Gallium nitride is generated vulnerable to disturbance in full-bridge or half-bridge topology opens by mistake logical situation.
In order to solve the above-mentioned technical problem, gallium nitride power device drive system of the invention includes pwm control circuit, pushes away
Pull driving chip, it is characterised in that further include limitation peak resistance Rgon, steady resistance Rig, speed-up capacitor Cs, shutdown resistance
Rgoff, pull down resistor Rpd；Input terminal of the trigger signal load of the pwm control circuit in push-pull type driving chip；It recommends
The drain electrode of the upper tube M1 of formula driving chip connects positive voltage VCD, source electrode stable connection resistance RigWith limitation peak resistance RgonOne
End, steady resistance RigThe other end connection gallium nitride power device (GaN-Tr) grid, limit peak resistance RgonThe other end
By turning off resistance RgoffThe source electrode of the down tube M2 of push-pull type driving chip is connected, while passing through speed-up capacitor CsConnect gallium nitride
The grid of power device；The down tube M2 of push-pull type driving chip and the source electrode of gallium nitride power device connect power ground；Drop-down electricity
Hinder RpdIt is connected between the grid and source electrode of gallium nitride power device.
The speed-up capacitor CsCapacitance csIt is determined according to formula (4)；
Wherein VnegTo load the reverse bias voltage in gallium nitride power device grids when trigger signal decline, VCC is to push away
The positive voltage of the upper tube M1 drain electrode connection of pull driving chip, VGSFFor the crest voltage of gallium nitride power device, cg=cgd+cgs,
cgdFor grid drain parasitic capacitance, cgsFor grid source electrode parasitic capacitance；If the peak value of gallium nitride power device disturbance voltage is Vgs, Vneg
Contrary and absolute value is greater than V with gallium nitride power device disturbance voltagegs；
Wherein K is the rate of rise of gallium nitride power device grids disturbance voltage, and T is when opening of gallium nitride power device
Between,LdsFor the parasitic inductance empirical value of gallium nitride power device.
Wherein limit peak resistance RgonIt is responsible for adjusting peak value when gallium nitride power device grids electric current is opened.Steady resistance
RigIt can determine grid current stationary value.Speed-up capacitor CsPlay the role of charge pump, provides the electricity of high current in switching time
Hold.Turn off resistance RgoffTurn-off speed is adjusted for gallium nitride power device.Pull down resistor RpdThere is no the case where driving signal
Under, when DC bus-bar voltage is applied to drain electrode, for preventing gallium nitride power device grids voltage from rising.
The present invention provides the PWM trigger pulse of two-way up and down by pwm control circuit and push-pull type driving chip, provides simultaneously
Accurately Power MOSFET.Pwm control circuit, push-pull type driving chip, limitation peak resistance Rgon, steady resistance Rig, accelerate
Capacitor CsWith shutdown resistance RgoffResonance circuit is formed, so that driving circuit has the fan-out capability of reverse bias voltage.
Requirement of the gallium nitride power device for gate driving circuit mainly has: trigger pulse must have sufficiently fast rising
And decrease speed；With low resistance to gate capacitance charges when opening, low resistance discharge loop is provided for gate charge when shutdown, with
Improve switching speed.The present invention is turning on and off the moment, provides quick perfusion and takes out stream, to support in converter high frequency
Working frequency, and in order to avoid opening by mistake logical caused shoot through, the gallium nitride power device on same bridge arm wherein one
When opening, application reverse bias is prevaricated to another, is opened by mistake to avoid it logical.
The present invention is compared to traditional driving circuit, and gallium nitride driving element can be more easily satisfied under high frequency condition
Performance requirement, during it cut-offs, rise time and fall time are all smaller, only more than ten nanoseconds.For gallium nitride
For device when being applied to full-bridge or half-bridge topology, threshold voltage of the grid is too low, and same bridge arm device is easy to be disturbed and produce
It is raw to open by mistake logical so that the case where causing short circuit to burn device, provides reverse bias voltage in its shutdown, protect to a certain extent
Gallium nitride power device, solves its safety problem, is able to maintain that normal work of the gallium nitride device under HF switch.
Detailed description of the invention
Invention is further described in detail with reference to the accompanying drawings and detailed description.
Fig. 1 is structural schematic diagram of the invention.
Fig. 2 is that gallium nitride power device opens stage drive waveforms schematic diagram.
Fig. 3 is gallium nitride power device off-phases drive waveforms schematic diagram.
Fig. 4 is the GaN-Tr structural schematic diagram with parasitic components.
Fig. 5 is actual measurement gallium nitride power device drain-source voltage and gate source voltage waveform diagram of the invention.
Specific embodiment
As shown in Figure 1, gallium nitride power device drive system of the invention includes pwm control circuit, push-pull type driving core
Piece, limitation peak resistance Rgon, steady resistance Rig, speed-up capacitor Cs, shutdown resistance Rgoff, pull down resistor Rpd；Pwm control circuit
Trigger signal load push-pull type driving chip input terminal；The drain electrode of the upper tube M1 of push-pull type driving chip connects positive voltage
VCC, source electrode stable connection resistance RigWith limitation peak resistance RgonOne end, steady resistance RigThe other end connect gallium nitride function
The grid of rate device (GaN-Tr) limits peak resistance RgonThe other end by shutdown resistance RgoffIt connects push-pull type and drives core
The source electrode of the down tube M2 of piece, while passing through speed-up capacitor CsConnect the grid of gallium nitride power device；Push-pull type driving chip
The source electrode of down tube M2 and gallium nitride power device connects power ground；Pull down resistor RpdBe connected to the grid of gallium nitride power device with
Between source electrode.
Limit peak resistance RgonFor limiting grid current peak value when gallium nitride power device is opened, avoid opening moment
Grid current is excessive to lead to gallium nitride power device breakdown.
Steady resistance RigFor by the grid current of gallium nitride power device stablize a setting value (setting value it is big
The small intrinsic relating to parameters with device, generally provides detailed numerical value in the tables of data of device).
Speed-up capacitor CsIt is provided for the shutdown moment in gallium nitride power device for gallium nitride power device reverse bias
One high current, the peak voltage for preventing gallium nitride power device from being opened generation by same bridge arm switching tube are interfered and then are opened by mistake
It is logical, damage device.
The speed-up capacitor CsCapacitance csIt is determined according to formula (4)；
Wherein VnegTo load the reverse bias voltage in gallium nitride power device grids when trigger signal decline, VCC is to push away
The positive voltage of the upper tube M1 drain electrode connection of pull driving chip, VGSFFor the crest voltage of gallium nitride power device, cg=cgd+cgs,
cgdFor grid drain parasitic capacitance, cgsFor grid source electrode parasitic capacitance；If gallium nitride power device is by parasitic components (grid drain parasitic
Capacitor cgd, grid source electrode parasitic capacitance cgs) peak value of disturbance voltage that generates is Vgs, VnegElectricity is disturbed with gallium nitride power device
Contrary and absolute value is pressed to be greater than Vgs；
Wherein K is the rate of rise of gallium nitride power device grids disturbance voltage, and T is when opening of gallium nitride power device
Between,LdsFor the parasitic inductance empirical value of gallium nitride power device.
Turn off resistance RgoffFor adjusting the turn-off speed of gallium nitride power device.
Pull down resistor RpdFor preventing DC bus-bar voltage to be applied to gallium nitride power device before the arriving of no driving signal
Its grid voltage rises when part drains.
As shown in Fig. 2, trigger signal is high level when gallium nitride power device is opened, gate-source voltage variation is as follows:
t0-t1Stage: gate-source voltage VgsPass through speed-up capacitor CsRapidly rise to Miller platform voltage Vm, it is GaN-Tr
Grid source electrode parasitic capacitance CgsCharging；Meanwhile the gate source current I of GaN-TrgsIt is climbed to peak Igp；
t1-t2Stage: VgsRise to Miller platform voltage VmAfterwards, the grid source electrode parasitic capacitance C of GaN-TrgsCharging, grid source
Pole tension VgsContinue rising up to crest voltage VGSF；The gate source current I of GaN-Tr simultaneouslygsRapid decrease；
Electric current flows through steady resistance R in the above processigWith limitation peak resistance RgonFor grid source electrode parasitic capacitance CgsAnd grid
Drain parasitic capacitance CgdCharging, wherein for grid drain parasitic capacitance CgdThe process of charging shows as the Miller effect, between hourglass source electrode
There is electric current to start to flow, grid source current IgsPeak IgpIt can calculate as follows:
It needs to consider peak I when designgpLess than the maximum value that GaN-Tr grid can bear electric current.
t2-t3Stage: gate-source voltage VgsIt is maintained at crest voltage VGSF, while grid source current IgsIt is slowly drop down to quiet
State electric current I0。
t3-t4Stage: grid source electrode parasitic diode DpIt is open-minded, quiescent current I0Flow through grid source electrode parasitic diode Dp.At this point,
Gate-source voltage VgsIt is clamped at crest voltage VGSF.In this stage, due to speed-up capacitor CsCharging also completed, finally
GaN-Tr grid current IrgEqual to inflow grid source electrode parasitic diode DpCurrent value.
Irg=(VCC-VGSF)/Rig (3)
As shown in figure 3, trigger signal is low level when gallium nitride power device turns off, gate-source voltage variation is as follows:
t4-t5Stage: this stage main task is for speed-up capacitor CsElectric discharge, push-pull type driving chip provide incoming current, take out
Take speed-up capacitor CsIn charge.Gallium nitride power device is opened the spike of generation by the switching tube of same bridge arm in order to prevent
Voltage opens by mistake logical, damage device in turn, needs to apply a reverse bias voltage for the grid of gallium nitride power device, this is reversed
Bias voltage is open-minded by the down tube M2 of push-pull type driving chip, upper tube M1 by when provide.By the way that speed-up capacitor C is arrangedsSize
Change apply reverse bias voltage size, can avoid the switching tube on same bridge arm because voltage disturbance simultaneously unlatching caused by
Under the premise of straight-through, minimal losses are realized.
t5Later: speed-up capacitor Cs, grid drain parasitic capacitance CgdAnd grid source electrode parasitic capacitance CgsBy limiting peak resistance
RgonWith steady resistance RigElectric discharge, gate-source voltage VgsIt is reduced to zero.
Present invention could apply in high frequency DC/DC converter.Fig. 5 is the system application actual measurement in conjunction with GaN driving circuit
Waveform.Push-pull type driving chip uses TIUCC25711.Under actual condition, it can be seen that GaN gate drive voltage VgsFor
7V, frequency 200kHz, are influenced by parasitic parameter in circuit, there is slight concussion in opening process, and possess inhibition open by mistake it is logical
Reverse bias voltage be -2V.During the work time, waveform is ideal, and drive loss is obtained by calculation and is
0.0217W。
It is compared to traditional driving circuit, property of the GaN driving element under high frequency condition can be more easily satisfied in the present invention
It can require, during it cut-offs, rise time and fall time are all smaller, only more than ten nanoseconds.And it provides reversed
Bias voltage prevents the disturbance introduced due to parasitic parameter from open by mistake the gallium nitride device of low threshold voltage logical.To a certain degree
On protect gallium nitride device costly, it is logical to solve the problems, such as that GaN power device is easy to open by mistake.
Claims (2)
1. a kind of gallium nitride power device drive system, including pwm control circuit, push-pull type driving chip, it is characterised in that also
Including limiting peak resistance (Rgon), steady resistance (Rig), speed-up capacitor (Cs), shutdown resistance (Rgoff), pull down resistor (Rpd)；
Input terminal of the trigger signal load of the pwm control circuit in push-pull type driving chip；The upper tube of push-pull type driving chip
(M1) drain electrode connects positive voltage VCD, source electrode stable connection resistance (Rig) and limitation peak resistance (Rgon) one end, stablize electricity
Hinder (Rig) the other end connection gallium nitride power device grid, limit peak resistance (Rgon) the other end by shutdown resistance
(Rgoff) connection push-pull type driving chip down tube (M2) source electrode, while pass through speed-up capacitor (Cs) connection gallium nitride power device
The grid of part；The down tube (M2) of push-pull type driving chip and the source electrode of gallium nitride power device connect power ground；Pull down resistor
(Rpd) be connected between the grid and source electrode of gallium nitride power device.
2. gallium nitride power device drive system according to claim 1, it is characterised in that the speed-up capacitor (Cs)
Capacitance csIt is determined by formula (4)；
Wherein VCC is the positive voltage of upper tube (M1) the drain electrode connection of push-pull type driving chip, CGSFFor the peak of gallium nitride power device
Threshold voltage, cg=cgd+cgs, cgdFor grid drain parasitic capacitance, cgsFor grid source electrode parasitic capacitance；VgsFor gallium nitride power device
Disturbance voltage peak value, VnegTo load the reverse bias voltage in gallium nitride power device grids, V when trigger signal declinenegWith
Gallium nitride power device disturbance voltage is contrary and absolute value is greater than Vgs；
Wherein K is the rate of rise of gallium nitride power device grids disturbance voltage, and T is the service time of gallium nitride power device,LdsFor the parasitic inductance empirical value of gallium nitride power device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201910378095.3A CN110224688A (en) | 2019-05-08 | 2019-05-08 | A kind of gallium nitride power device drive system |
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| CN201910378095.3A CN110224688A (en) | 2019-05-08 | 2019-05-08 | A kind of gallium nitride power device drive system |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113098240A (en) * | 2021-03-31 | 2021-07-09 | 西北工业大学 | Drive circuit of Cascode type GaN power device |
| CN114128117A (en) * | 2021-04-16 | 2022-03-01 | 英诺赛科(苏州)科技有限公司 | Controller for controlling GaN-based device and method for implementing the same |
| WO2023193561A1 (en) * | 2022-04-07 | 2023-10-12 | 安徽威灵汽车部件有限公司 | Parameter determining method and device for gate drive resistor of switching transistor, and circuit |
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| CN113098240A (en) * | 2021-03-31 | 2021-07-09 | 西北工业大学 | Drive circuit of Cascode type GaN power device |
| CN113098240B (en) * | 2021-03-31 | 2024-01-16 | 西北工业大学 | Driving circuit of Casode type GaN power device |
| CN114128117A (en) * | 2021-04-16 | 2022-03-01 | 英诺赛科(苏州)科技有限公司 | Controller for controlling GaN-based device and method for implementing the same |
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| WO2023193561A1 (en) * | 2022-04-07 | 2023-10-12 | 安徽威灵汽车部件有限公司 | Parameter determining method and device for gate drive resistor of switching transistor, and circuit |
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Application publication date: 20190910 |
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