CN107911010A - A kind of drive system of GaN power devices - Google Patents
A kind of drive system of GaN power devices Download PDFInfo
- Publication number
- CN107911010A CN107911010A CN201711438936.2A CN201711438936A CN107911010A CN 107911010 A CN107911010 A CN 107911010A CN 201711438936 A CN201711438936 A CN 201711438936A CN 107911010 A CN107911010 A CN 107911010A
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- Prior art keywords
- circuit
- resonance
- power devices
- auxiliary switch
- inductance
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/083—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the ignition at the zero crossing of the voltage or the current
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
- H02M1/0058—Transistor switching losses by employing soft switching techniques, i.e. commutation of transistors when applied voltage is zero or when current flow is zero
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
Abstract
The present invention relates to a kind of drive system of GaN power devices, mainly include control circuit 1, resonance circuit and lossless buffer circuit 3, resonance circuit, which further includes, opens resonance circuit 2 and shut-off resonance circuit 4, pass through upper and lower two different charging and discharging circuits so that this drive circuit, which has, provides asymmetric fan-out capability.Using resonance principle in switching tube turn off process by L by the energy back being stored in C into power supply; enabled amount is utilized effectively; lossless buffer circuit is added to slow down the rate of climb of voltage at the same time; GaN power devices are protected to a certain extent, solve the problems, such as the high loss of GaN power device drive circuits.
Description
Technical field
The present invention relates to the application field of GaN power devices, more particularly to a kind of drive system of GaN power devices.
Background technology
Wide bandgap semiconductor GaN is the ideal material of third generation power device, is the major part of power inverter, makes work(
The volume direction of rate converter towards high frequency, high power density and smaller is developed.While faster switching speed is possessed, by
To frequency it is proportional increased in power attenuation, therefore in high frequency, power attenuation is most important problem, in switching frequency
When higher, switching loss is the principal element of power attenuation.When GaN MOSFET are applied to high frequency, traditional gate-drive electricity
Road cannot meet the requirement of low-power consumption, and power attenuation can proportional increase with frequency.The gate pole threshold voltage of GaN MOSFET
It is very low, in the range of 1.4-1.7V, it is easy to which the vibration spike produced by the stray inductance in circuit makes it mislead.
In order to adapt to the growth requirement in future, converter has to improve efficiency and power density, meets low-loss spy
Point, but the power attenuation of GaN drive circuits is still higher at present, therefore the present invention proposes a kind of GaN work(of low-power consumption
The drive system of rate device.
The content of the invention
The present invention provides a kind of drive system of GaN power devices, for solving the high power of current GaN drive circuits
Loss problem, while also reduce due to voltage spikes and current spike of the GaN power devices in switching process.
The present invention provides a kind of drive system of GaN power devices, including control circuit 1, resonance circuit 2 is opened, is closed
Disconnected resonance circuit 4, lossless buffer circuit 3, the control circuit 1 are used to produce two-way pwm signal, auxiliary switch Q1 and Q2
Conducting；The resonance circuit 2 of opening is made of D1, L1 and R1, for realizing that main switch T1 is open-minded；The shut-off resonance
Circuit 4 is made of D2, L2 and R2, for realizing that main switch T1 is turned off；The lossless buffer circuit 3 is used for slowing down main switch
The rate of climb of pipe T1 drain voltages, plays a protective role main switch T1.
Control circuit is exported including upper and lower two-way PWM, can control the gate drive voltage of auxiliary switch, can basis
The model of gallium nitride main switch T1 determines the size of the driving voltage of G poles.
The drive circuit of GaN power devices includes resonance circuit, and resonance is determined according to the parameter of selected GaN power devices
The parameter of device used in circuit, resonance circuit are used for realization the zero voltage switch of auxiliary switch, reduce opening for auxiliary switch
Close loss.
Further, it is asymmetric to possess offer using independent circuit is charged and discharged for resonance circuit 2 and resonance circuit 4
The ability of output, the resonance circuit 2 forms for D1, L1, R1, when auxiliary switch Q1 is cut-off, resonant inductance L1
LCR resonance circuits, resonant inductance L1 and external input capacitance are formed with the external input capacitance Ci and resistance R1 of gallium nitride T1
Resonance occurs for Ci；The resonance circuit 4 forms for D2, L2, R2, when auxiliary switch Q2 is cut-off, resonant inductance L2
LCR resonance circuits, resonant inductance L2 and external input capacitance are formed with the external input capacitance Ci and resistance R2 of gallium nitride T1
Resonance occurs for Ci.
The drive circuit of GaN power devices further includes lossless buffer circuit, and lossless buffer circuit is used to slow down GaN power devices
Part opens the rate of climb of rear drain voltage, has the function that a kind of buffering, while lossless buffer circuit is different from traditional delay
Rush circuit is not having a resistive element in circuit, but with inductance and diode in place resistance, so avoid the damage of energy
Consumption.
The present invention is a kind of drive system of GaN power devices, is with simple circuit and electronic component, passes through module
Change is combined into a kind of drive circuit of new and effective GaN power devices.It is compared to traditional drive circuit, energy of the present invention
It is easier to meet performance requirement of the GaN power devices under high frequency condition, during it cut-offs, when the rise time is with declining
Between all smaller, only tens nanoseconds.As long as the accurately control signal of control auxiliary switch Q1, Q2, will realize Sofe Switch,
After adding lossless buffer circuit, the voltage and current waveform of gate pole is obviously improved, and the rate of climb of voltage and current becomes
It is slow, reduce current spike.Drive circuit is protected to a certain extent, the high damage for solving GaN power device drive circuits
Consumption problem.
Brief description of the drawings
Fig. 1 is the overall structure block diagram of drive system
Fig. 2 is the module connection figure of drive system
Fig. 3 is the circuit diagram of drive system
Fig. 4 is the test waveform figure of drive system
Fig. 5 is each several part loss numerical value of drive system
Fig. 6 is to apply measured waveform with reference to GaN drive systems in embodiment
Wherein：
1 is control circuit
2 be to open resonance circuit
3 be lossless buffer circuit
4 are off resonance circuit
Embodiment
The present invention is made by the method for combination embodiment and attached drawing now and is explained further and illustrates.
Fig. 1 is the overall structure block diagram of drive system.From figure 1 it appears that the present invention is suitable for GaN power devices
Drive system includes control circuit 1, opens resonance circuit 2, shut-off resonance circuit 4 and lossless buffer circuit 3, and control circuit is used for
Produce two-way pwm signal, driving auxiliary switch conducting；Resonance circuit is used for realizing turning on and off for gallium nitride T1；It is lossless
Buffer circuit is used for slowing down the rate of climb of main switch T1 drain voltages, plays a protective role to main switch T1.
In the above-described embodiments, control circuit is exported including upper and lower two-way PWM, and the gate pole of auxiliary switch can be controlled to drive
Dynamic voltage, can determine the size of the driving voltage of gate pole according to the model of gallium nitride main switch.
In the above-described embodiments, the drive system of GaN power devices includes resonance circuit, according to selected GaN power devices
Parameter determine the parameter of device used in resonance circuit, resonance circuit is used for realization the zero voltage switch of auxiliary switch, subtracts
The switching loss of small auxiliary switch.
In the above-described embodiments, resonance circuit, which further includes, opens resonance circuit and shut-off resonance circuit, passes through upper and lower two
Different charging and discharging circuit so that this drive circuit, which has, provides asymmetric fan-out capability.Resonance circuit 2 is D1, L1, R1 group
Into, when auxiliary switch Q1 is cut-off, the external input capacitance Ci and resistance R1 groups of resonant inductance L1 and gallium nitride T1
Into LCR resonance circuits, resonance occurs for resonant inductance L1 and external input capacitance Ci；Resonance circuit 4 forms for D2, L2, R2, when auxiliary
When helping the switching tube Q2 to cut-off, external input capacitance Ci and resistance R2 the composition LCR of resonant inductance L2 and gallium nitride T1 is humorous
Shake circuit, and resonance occurs for resonant inductance L2 and external input capacitance Ci.
Fig. 2 is the module connection figure of drive circuit.Modules in above-described embodiment can be by way of shown in Fig. 2
It is attached, two resonance circuits form the nucleus module of drive system, and control circuit provides two-way pwm signal output up and down,
By the way that auxiliary switch Q1, the accurate control of Q2, charge circuit are successively occurred resonance phenomena with discharge loop, are realized tested
The zero voltage switch of GaN power devices.Then lossless buffer circuit is added at the hourglass source electrode both ends of tested GaN power devices,
For slowing down the rate of climb of drain voltage, ensure the stable operation of system.
In the above-described embodiments, lossless buffer circuit includes capacitance C1, diode D3, D4 and inductance L4, when GaN is turned on
When, the energy that is stored in C1 will be converted to magnetic field energy existing in the form of inductive current, wherein one end of inductance L4 with
GaN source electrodes are commonly connected to ground.Lossless buffer circuit is used to slow down the rate of climb that GaN power devices open rear drain voltage, reaches
A kind of effect of buffering, while lossless buffer circuit is not having resistive element different from traditional buffer circuit in circuit, and
It is to use inductance and diode in place resistance, so avoids the loss of energy.When on the moment that main switch is opened, capacitance C1
Voltage be zero, diode D3 bears backward voltage VCC, then VCC to capacitance C1 charge, capacitance C1 both end voltages rise,
Inductance L4 both end voltages decline at the same time, since inductance L4 electric currents cannot be mutated, it will continue to charge to capacitance C1.When capacitance C1 electricity
Press as VCC, diode D3 voltages are zero, and when inductance L4 electric currents are zero, due to the presence of diode D4, capacitance C1 is not put
Electrical circuit；When main switch gallium nitride T1 is turned off, diode D3 conductings, capacitance C1 starts to discharge, the DS of gallium nitride T1
Pole tension starts to be raised slowly to VCC, and zero voltage turn-off, no turn-off power loss are realized in this process.
Fig. 3 is the circuit diagram of drive circuit.In the above-described embodiments, according to circuit is built shown in Fig. 3, GaN is introduced
Power device.
Wide bandgap semiconductor GaN is the ideal material of third generation power device, is the major part of power inverter, makes work(
The volume direction of rate converter towards high frequency, high power density and smaller is developed.While faster switching speed is possessed, by
To frequency it is proportional increased in power attenuation, therefore in high frequency, power attenuation is most important problem, in switching frequency
When higher, switching loss is the principal element of power attenuation.Under the pattern of high frequency, the parasitic parameter of GaN, which becomes, can not ignore
Influence factor, it is contemplated that this point, it is possible to using the principle of LC resonance, during GaN MOSFET are turned off, pass through electricity
Feel L by among the energy back in input capacitance Ci to voltage source, efficiently using for energy is realized with this, reduces loss.
As shown in Figure 4, the drive circuit of the GaN power devices of the present application can reduce the spike of drain current, together
When also slow down the rate of climb of drain voltage, as long as the accurately control signal of control auxiliary switch Q1, Q2, in opening process
In, with gate pole input capacitance resonance will occur for inductance, but driving current is zero-based, causes actuating speed slower.
After adding lossless buffer circuit, the voltage and current waveform of gate pole is obviously improved, and the rate of climb of voltage and current becomes
It is slow, current spike is reduced, realizes zero voltage switch.Meanwhile buffer circuit also reduces the average loss of gallium nitride T1, electricity
Pressure and current spike are also within its safety value 7V and 10A, it is therefore prevented that second breakdown.
Fig. 5 is each several part loss numerical value of present invention driver circuit, by calculating and emulating the data obtained jointly：Tradition
The total losses of gate-drive are 0.64W, and the total losses of drive system of the present invention are 0.2844W, compared to traditional GaN
MOSFET drive circuits, the gate pole loss of drive system of the invention reduce 55.56%.
Specifically, the drive system of the present invention can be used in DC/DC converters.Fig. 6 is to combine GaN in embodiment to drive
The system application measured waveform of dynamic circuit.Under actual condition, it can be seen that GaN gate drive voltages are 6V, and frequency is
494.8kHz, parasitic parameter is influenced in by circuit, has slight oscillatory in opening process, driving voltage spike is 7.6V, defeated
It is 77V to go out due to voltage spikes.In turn off process, waveform is ideal, but turn-off speed is slower than opening speed, passes through calculating
It is 0.0217W, total losses 0.3015W to obtain drive loss.
In summary described, the present invention is a kind of drive system of GaN power devices, is with simple circuit and electronics member
Device, becomes a kind of drive circuit of new and effective GaN power devices by modular combination.It is compared to traditional driving
Circuit, the present invention can be easier to meet performance requirement of the GaN power devices under high frequency condition, during it cut-offs, on
Rise the time and fall time is all smaller, only tens nanoseconds.As long as the accurately control signal of control auxiliary switch Q1, Q2,
It is easy to realize Sofe Switch, after adding lossless buffer circuit, the voltage and current waveforms of GaN power device gate poles has obtained bright
Aobvious to improve, the rate of climb of voltage and current slows down, and reduces current spike.Drive circuit is protected to a certain extent, is solved
The high loss problem for GaN power device drive circuits of having determined.
Claims (5)
1. a kind of drive system of GaN power devices, it is characterised in that including control circuit 1, open resonance circuit 2, shut-off is humorous
Shake circuit 4, lossless buffer circuit 3, and the control circuit 1 is used to produce two-way pwm signal, and auxiliary switch Q1 and Q2 are led
It is logical；The resonance circuit 2 of opening is made of D1, L1 and R1, for realizing that main switch T1 is open-minded；The shut-off resonance electricity
Road 4 is made of D2, L2 and R2, for realizing that main switch T1 is turned off；The lossless buffer circuit 3 is used for slowing down main switch
The rate of climb of T1 drain voltages, plays a protective role main switch T1.
A kind of 2. drive system of GaN power devices according to claim 1, it is characterised in that the resonance circuit 2
With resonance circuit 4 using independent circuit is charged and discharged, possess the ability that asymmetric output is provided, the resonance circuit 2
Formed for D1, L1, R1, when auxiliary switch Q1 is cut-off, the external input capacitance Ci of resonant inductance L1 and gallium nitride T1
And resonance occurs for resistance R1 composition LCR resonance circuits, resonant inductance L1 and external input capacitance Ci；The resonance circuit 4
Formed for D2, L2, R2, when auxiliary switch Q2 is cut-off, the external input capacitance Ci of resonant inductance L2 and gallium nitride T1
And resonance occurs for resistance R2 composition LCR resonance circuits, resonant inductance L2 and external input capacitance Ci.
3. the drive system of a kind of GaN power devices according to claim 1 and claim 3, it is characterised in that described
Charge circuit for auxiliary switch Q1 conducting, auxiliary switch Q2 shut-off when, external input capacitance Ci voltages are gradually increasing, nitrogen
Change gallium T1 conductings, the resonance circuit that L1, Ci and R1 are formed, when electric current rises to peak value, diode D1 voltages are reverse-biased, prevent electricity
Stream continues to increase, and external input capacitance Ci voltage clampings are led in maximum, the discharge loop for auxiliary switch Q2
Circuit when logical, auxiliary switch Q1 is turned off, the total voltage of discharge loop is zero.
A kind of 4. drive system of GaN power devices according to claim 1, it is characterised in that the control circuit 1
Using " push-pull type " structure output, in charging process, the output terminal of auxiliary switch Q1 is connected to the G of gallium nitride T1 through inductance L1
Pole, in discharge process, the input terminal of auxiliary switch Q2 is connected to the G poles of gallium nitride T1 through inductance L2.
A kind of 5. drive system of GaN power devices according to claim 1, it is characterised in that the nondestructive buffering
Circuit 3 includes capacitance C1, diode D3, D4 and inductance L4, and when gallium nitride T1 is turned on, the energy being stored in capacitance C1 will
It can be converted to and be commonly connected to ground with gallium nitride S poles with magnetic field energy existing for inductance L4 current forms, wherein one end of inductance L4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711438936.2A CN107911010A (en) | 2017-12-25 | 2017-12-25 | A kind of drive system of GaN power devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711438936.2A CN107911010A (en) | 2017-12-25 | 2017-12-25 | A kind of drive system of GaN power devices |
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| Publication Number | Publication Date |
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| CN107911010A true CN107911010A (en) | 2018-04-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201711438936.2A Pending CN107911010A (en) | 2017-12-25 | 2017-12-25 | A kind of drive system of GaN power devices |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109067228A (en) * | 2018-08-06 | 2018-12-21 | 西北工业大学 | A kind of driver and printed circuit layout based on gallium nitride power device |
| CN110138195A (en) * | 2019-05-24 | 2019-08-16 | 哈尔滨工业大学 | Inhibit the lossless buffer circuit and its test circuit of GaN half-bridge module due to voltage spikes and current resonance |
| CN112491403A (en) * | 2020-12-15 | 2021-03-12 | 南京工业职业技术大学 | Capture effect eliminating method for GaN HEMT device applied to high-frequency circuit |
-
2017
- 2017-12-25 CN CN201711438936.2A patent/CN107911010A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109067228A (en) * | 2018-08-06 | 2018-12-21 | 西北工业大学 | A kind of driver and printed circuit layout based on gallium nitride power device |
| CN110138195A (en) * | 2019-05-24 | 2019-08-16 | 哈尔滨工业大学 | Inhibit the lossless buffer circuit and its test circuit of GaN half-bridge module due to voltage spikes and current resonance |
| CN110138195B (en) * | 2019-05-24 | 2020-10-27 | 哈尔滨工业大学 | Nondestructive buffer circuit for restraining voltage spike and current resonance of GaN half-bridge module and test circuit thereof |
| CN112491403A (en) * | 2020-12-15 | 2021-03-12 | 南京工业职业技术大学 | Capture effect eliminating method for GaN HEMT device applied to high-frequency circuit |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180413 |
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| WD01 | Invention patent application deemed withdrawn after publication |