CN112491403A - Capture effect eliminating method for GaN HEMT device applied to high-frequency circuit - Google Patents
Capture effect eliminating method for GaN HEMT device applied to high-frequency circuit Download PDFInfo
- Publication number
- CN112491403A CN112491403A CN202011470986.0A CN202011470986A CN112491403A CN 112491403 A CN112491403 A CN 112491403A CN 202011470986 A CN202011470986 A CN 202011470986A CN 112491403 A CN112491403 A CN 112491403A
- Authority
- CN
- China
- Prior art keywords
- frequency division
- time
- turn
- gan hemt
- ton
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 44
- 230000000694 effects Effects 0.000 title claims abstract description 35
- 230000008030 elimination Effects 0.000 claims abstract description 12
- 238000003379 elimination reaction Methods 0.000 claims abstract description 12
- 239000003574 free electron Substances 0.000 claims description 10
- 230000001360 synchronised effect Effects 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 6
- 229910002601 GaN Inorganic materials 0.000 abstract description 35
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract description 33
- 238000005516 engineering process Methods 0.000 abstract description 5
- 238000000407 epitaxy Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000010893 electron trap Methods 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000005264 electron capture Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000010485 coping Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K7/00—Modulating pulses with a continuously-variable modulating signal
- H03K7/08—Duration or width modulation ; Duty cycle modulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The invention discloses a method for eliminating a trapping effect of a GaN HEMT device applied to a high-frequency circuit, relates to the field of gallium nitride-based third-generation wide bandgap semiconductors, is firstly put forward to be realized in the application of a back-end high-frequency circuit, and solves the problem that the trapping effect cannot be eliminated in front-end epitaxy and device design at present. The method adopts a novel topological circuit control mode, and the core of the control mode is to adopt a frequency division working mode and an average output control technology. The control mode fully utilizes the high-frequency working advantage of the GaN HEMT device, and achieves the elimination of the trapping effect of the device by reducing the single turn-off time of the device to be less than the time required by electron trapping in the device.
Description
Technical Field
The invention relates to the field of gallium nitride-based third-generation wide bandgap semiconductors, in particular to a method for eliminating a capture effect of a GaN HEMT device applied to a high-frequency circuit.
Background
GaN (gallium nitride) as a typical representative of the third generation semiconductor has the advantages of wide forbidden band width, high electron drift velocity, high breakdown field strength, stable chemical properties and the like, but due to strong polarization and lattice mismatch between heterojunction materials in the interior of a GaN HEMT device and immature epitaxial technology, the internal material of the device generates up to 5x106/cm3The defect density of (2). When the GaN HEMT device works under the condition of high drain voltage, the electric field intensity of 3-5 MV/cm can be generated inside the device. The strong electric field can activate the device bodyDefects of materials, GaN/AlGaN heterojunction interfaces and AlGaN surfaces cause the defects to trap free electrons of 2DEG in channels, so that serious reliability problems of current collapse, increased dynamic resistance, threshold drift and the like occur in devices, and the process and the influence are called trapping effect. When the GaN HEMT device works in a high-voltage and high-frequency Pulse Width Modulation (PWM) state at the same time, no current passes through the device when the device is turned off, the drain voltage of the device is very high, defect trapping can occur in the period of time, when the device is turned on, large current passes through the device, the drain voltage of the device is very low, generally below 5V, defect de-trapping can occur at the moment, namely after the high voltage is removed, trapped free electrons can escape and return to a channel. A large number of researches prove that the time constant of trapping is a plurality of nanoseconds, the time constant of de-trapping is tens of microseconds or even hundreds of microseconds, and the time of de-trapping is very slow, so that the high-frequency operation is very unfavorable.
At present, research on solving the trapping effect of the GaN HEMT device is completely focused on front-end epitaxy and device stages, and a great number of coping methods are proposed, such as optimizing electric field distribution inside the device by using a field plate, reducing a local peak electric field, improving epitaxial growth quality by using a patterned substrate, reducing leakage current by using an insertion layer, and the like. These front-end epitaxy or device based approaches improve trapping effects only to some extent and do not eliminate them.
Disclosure of Invention
The invention aims to provide a method for eliminating the trapping effect of a GaN HEMT device applied to a high-frequency circuit, which adopts a novel PWM control mode to further perform high-frequency chopping on a wave to be cut off on the basis of the traditional PWM control mode, and the single-time cut-off time of the device is short. I.e. the on-time of the conventional PWM mode is shortened and the off-time is further divided. When the single turn-off time is less than the time required for the trapping of electrons by the trapping effect, the trapping effect does not occur. The core of the control mode is to adopt a frequency division working mode and an average output control technology, fully utilize the high-frequency working advantage of the GaN HEMT device, reduce the single turn-off time of the device to be less than the time required by electron capture in the device, and realize the elimination of the capture effect of the device.
A GaN HEMT device is applied to a capture effect elimination method in a high-frequency circuit, and comprises a power circuit and a feedback link, wherein a time sequence drive control link and the GaN HEMT device are connected between the power circuit and the feedback link, and the time sequence drive control link comprises a turn-on control device and a turn-off frequency division control device;
the method for eliminating the trapping effect comprises the following steps,
the method comprises the following steps: dividing one working cycle of the GaN HEMT device into 2 parts, wherein the 1 st part is an on-stage, and the 2 nd part is an off-frequency division stage;
step two: setting the turn-on time Ton _ c and the duty ratio Do of the turn-off frequency division stage, controlling the single turn-off time between 0.1 ns and 5ns, and realizing output by adjusting the number of PWM cycles of the turn-off frequency division stage;
step three: and calculating the overall duty ratio D according to the input and output conditions and the transformer turn ratio, and determining the on-time Ton and the work period T required by the GaN HEMT device according to Ton = Ton _ c + (T-Ton _ c) = Do: (T + Ton _ c) = DT.
Preferably, the turn-on control device and the turn-off frequency division control device perform synchronous processing on a time sequence, and the turn-on stage is followed by the turn-off frequency division stage.
Preferably, the duty ratio Do of the turn-off frequency division stage in the second step can be arbitrarily set from 30% to 100%, and the single turn-off time is less than the trapping time constant of free electrons in the GaN HEMT device.
Preferably, the timing driving control link can further include an on control device, an off frequency division control device, and an off control device.
Preferably, the method for eliminating the trapping effect comprises the following steps,
the method comprises the following steps: dividing one working cycle of the GaN HEMT device into 3 parts, wherein the 1 st part is an on-stage, the 2 nd part is an off-frequency division stage, and the 3 rd part is an optional off-stage;
step two: setting an on-time Ton _ c, an off-time Toff _ c and a duty ratio Do of an off frequency division stage, controlling the single off-time to be between 0.1 and 5ns, and realizing output by adjusting the number of PWM cycles of the off frequency division stage;
step three: and calculating the overall duty ratio D according to the input and output conditions and the transformer turn ratio, and determining the required on-time Ton and the working period T of the GaN HEMT device according to Ton = Ton _ c + (T-Ton _ c-Toff _ c) = Do = (T + Ton _ c-Toff _ c) = DT.
Preferably, the turn-on control device, the turn-off frequency division control device and the turn-off control device perform synchronous processing on a time sequence, the turn-on stage enters the turn-off frequency division stage after the turn-on stage is completed, and the turn-off frequency division stage enters the turn-off stage after the turn-off frequency division stage.
Preferably, the duty ratio Do of the turn-off frequency division stage in the second step can be arbitrarily set from 30% to 100%, and the single turn-off time is less than the trapping time constant of free electrons in the GaN HEMT device.
The invention has the advantages that: the novel PWM control mode is adopted, on the basis of the traditional PWM control mode, the cut-off wave is further subjected to high-frequency chopping, and the single cut-off time of the device is short. I.e. the on-time of the conventional PWM mode is shortened and the off-time is further divided. When the single turn-off time is less than the time required for the trapping of electrons by the trapping effect, the trapping effect does not occur. The core of the control mode is to adopt a frequency division working mode and an average output control technology, fully utilize the high-frequency working advantage of the GaN HEMT device, reduce the single turn-off time of the device to be less than the time required by electron capture in the device, and realize the elimination of the capture effect of the device.
Drawings
FIG. 1 is a schematic diagram of the structure of the present invention;
FIG. 2 is a schematic diagram illustrating a comparison between the present invention and a conventional PWM control method;
FIG. 3 is a schematic structural diagram of a mode of dividing a duty cycle into 2 parts according to the present invention;
FIG. 4 is a graph of the voltage waveform of a pattern of the present invention in which the duty cycle is divided into 2 portions;
FIG. 5 is a schematic structural diagram of a mode in which the duty cycle is divided into 3 parts according to the present invention;
FIG. 6 is a graph of the voltage waveform of a pattern of the present invention in which the duty cycle is divided into 3 portions;
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the invention easy to understand, the invention is further described with the specific embodiments.
As shown in fig. 1 to 6, a method for eliminating a capture effect of a GaN HEMT device applied to a high-frequency circuit includes a power circuit and a feedback link, wherein a time sequence driving control link and the GaN HEMT device are connected between the power circuit and the feedback link, and the time sequence driving control link includes a turn-on control device and a turn-off frequency division control device; an on control device is used to achieve the conduction of the device within a set fixed time. A turn-off frequency division control device is adopted to realize the operation of the device in a high-frequency range from hundreds of MHz to several GHz.
The method for eliminating the trapping effect comprises the following steps,
the method comprises the following steps: dividing one working cycle of the GaN HEMT device into 2 parts, wherein the 1 st part is an on-stage, and the 2 nd part is an off-frequency division stage;
step two: setting the turn-on time Ton _ c and the duty ratio Do of the turn-off frequency division stage, controlling the single turn-off time between 0.1 ns and 5ns, and realizing output by adjusting the number of PWM cycles of the turn-off frequency division stage;
step three: and calculating the overall duty ratio D according to the input and output conditions and the transformer turn ratio, and determining the on-time Ton and the work period T required by the GaN HEMT device according to Ton = Ton _ c + (T-Ton _ c) = Do: (T + Ton _ c) = DT.
As shown in fig. 2, the conventional PWM control method is shown in fig. 2 (a) and 2 (b), where (a) is a drive voltage waveform and (b) is a corresponding drain voltage waveform. In a traditional PWM control mode, the single turn-off time of a device is long;
the PWM control method implemented by the present invention is shown in fig. 2 (c) and 2 (d), where (c) is a drive voltage waveform and (d) is a corresponding drain voltage waveform. The single turn-off time of the device is short.
The on-time (Ton _ c) of the on-phase is fixed and is set in relation to the circuit topology and parameters such as output power, inductance of the magnetic element, etc.
The on-control device and the off-frequency division control device perform synchronous processing on a time sequence, and the on-phase is completed and then the off-frequency division phase is entered. The 2 devices need to be synchronously processed in time sequence, and the on-phase is completed and then the frequency division off phase is started. One conducting phase and one turn-off frequency division phase form a working period together.
And in the second step, the duty ratio Do of the turn-off frequency division stage can be set from 30% to 100% at will, and the single turn-off time is less than the capture time constant of free electrons in the GaN HEMT device.
The sequential driving control link can also comprise a switching-on control device, a switching-off frequency division control device and a switching-off control device.
The method for eliminating the trapping effect is characterized by comprising the following steps,
the method comprises the following steps: dividing one working cycle of the GaN HEMT device into 3 parts, wherein the 1 st part is an on-stage, the 2 nd part is an off-frequency division stage, and the 3 rd part is an optional off-stage;
step two: setting an on-time Ton _ c, an off-time Toff _ c and a duty ratio Do of an off frequency division stage, controlling the single off-time to be between 0.1 and 5ns, and realizing output by adjusting the number of PWM cycles of the off frequency division stage;
step three: and calculating the overall duty ratio D according to the input and output conditions and the transformer turn ratio, and determining the required on-time Ton and the working period T of the GaN HEMT device according to Ton = Ton _ c + (T-Ton _ c-Toff _ c) = Do = (T + Ton _ c-Toff _ c) = DT.
The on-control device, the off-frequency division control device and the off-control device perform synchronous processing on a time sequence, the on-phase is completed and then enters the off-frequency division phase, and the off-frequency division phase is completed and then enters the off-phase. 3 devices need to be synchronously processed in time sequence, and the on-phase is completed and then enters the off-frequency division phase, and then enters the optional off-phase. An on-phase and an off-dividing phase, and possibly an off-phase, together form a duty cycle. The time of the turn-off stage can be fixed or variable according to the circuit requirements, and can be used for flexibly adjusting the working state of the magnetic element to be in a continuous mode or an intermittent mode.
And in the second step, the duty ratio Do of the turn-off frequency division stage can be set from 30% to 100% at will, and the single turn-off time is less than the capture time constant of free electrons in the GaN HEMT device.
The output is realized by adjusting the number of PWM cycles of the turn-off frequency division stage and the optional turn-off stage time, the total turn-on time and turn-off time in the whole cycle are changed, and the frequency is also changed.
The specific implementation mode and principle are as follows:
the first embodiment is as follows: as shown in fig. 3, the control of the GaN HEMT device is split into 2 parts. Part 1 controls the on-stage of the device, and adopts an on-control device to realize the conduction of the device in a set fixed time; in the other part 1, the turn-off frequency division stage of the device is controlled, and a turn-off frequency division control device is adopted to realize that the device works in a high-frequency range from hundreds of MHz to several GHz. The two devices need to be synchronized in time sequence, and the on-phase is completed and then the off-frequency division phase is entered. One on stage and one off frequency division stage form a working period;
the on-time (Ton _ c) of the on-phase is fixed and is set in relation to the circuit topology and parameters such as output power, inductance of the magnetic element, etc. The duty ratio of the turn-off frequency division stage is fixed, the fixed duty ratio can be set from 30% -100%, the single turn-off time is controlled between 0.1 ns and 5ns according to different device structures, the time is smaller than a capture time constant of free electrons in the device, the output is realized by adjusting the number of PWM cycles of the turn-off frequency division stage, the total turn-on time and the turn-off time in the whole cycle are changed, and the frequency is also changed;
as shown in fig. 4 (a) and (b), the overall duty ratio D is calculated according to the input and output conditions and the transformer turn ratio, and the on-time Ton and the duty cycle T required by the device are designed. Assuming that the duty cycle in a certain input/output case is T, the overall duty cycle is D, the duty cycle in the frequency division stage is set to Do of 0.5, and the on-stage time is Ton _ c, there is an on-time Ton = Ton _ c + (T-Ton _ c) × 0.5= (T + Ton _ c) = DT.
Example two: as shown in fig. 5, the control of the GaN HEMT device is split into 3 parts. The part 1 controls the on-stage of the device, and adopts an on-control device to realize the conduction of the device within a set fixed time; in the turn-off frequency division stage of the part 2 control device, a turn-off frequency division control device is adopted to realize that the device works in a high-frequency range from hundreds of MHz to several GHz; and in the 3 rd part, a turn-off control device is adopted to realize turn-off of the device in the turn-off stage of the device. The three devices need to be synchronously processed in time sequence, and the on-phase is completed and then enters the off-frequency division phase, and then enters the off-phase. One on stage, one off frequency division stage and one off stage form one working cycle;
the on-time (Ton _ c) of the on-phase is fixed and is set in relation to the circuit topology and parameters such as output power, inductance of the magnetic element, etc. The duty ratio of the turn-off frequency division stage is fixed, the fixed duty ratio can be set from 30% -100%, the single turn-off time is controlled between 0.1 ns and 5ns according to different device structures, and the time is smaller than the capture time constant of free electrons in the device. The time of the turn-off stage can be fixed or variable according to the circuit requirement, the working state of the magnetic element can be flexibly adjusted to be a continuous mode or an intermittent mode, the output is realized by adjusting the number of PWM cycles of the turn-off frequency division stage and the time of the turn-off stage, the total turn-on time and the turn-off time in the whole cycle are variable, and the frequency is also variable;
as shown in fig. 6 (a) and (b), the overall duty ratio D is calculated according to the input and output conditions and the transformer turn ratio, and the on-time Ton and the duty cycle T required by the device are designed. Assuming that the duty cycle in a certain input/output case is T, the overall duty cycle is D, the duty cycle in the frequency division stage is set to Do of 0.5, the on-stage time is Ton _ c, and the off-stage time is Toff _ c, there is an on-time Ton = Ton _ c + (T-Ton _ c-Toff _ c) =0.5 (T + Ton _ c-Toff _ c) = DT.
Based on the above, the novel PWM control mode is adopted in the invention, on the basis of the traditional PWM control mode, the high-frequency chopping is further carried out on the cut-off wave, and the single-time cut-off time of the device is short. I.e. the on-time of the conventional PWM mode is shortened and the off-time is further divided. When the single turn-off time is less than the time required for the trapping of electrons by the trapping effect, the trapping effect does not occur. The core of the control mode is to adopt a frequency division working mode and an average output control technology, fully utilize the high-frequency working advantage of the GaN HEMT device, reduce the single turn-off time of the device to be less than the time required by electron capture in the device, and realize the elimination of the capture effect of the device.
It will be appreciated by those skilled in the art that the invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The embodiments disclosed above are therefore to be considered in all respects as illustrative and not restrictive. All changes which come within the scope of or equivalence to the invention are intended to be embraced therein.
Claims (7)
1. A GaN HEMT device is applied to a capture effect elimination method in a high-frequency circuit, and comprises a power circuit and a feedback link, and is characterized in that a time sequence drive control link and the GaN HEMT device are connected between the power circuit and the feedback link, and the time sequence drive control link comprises a turn-on control device and a turn-off frequency division control device;
the method for eliminating the trapping effect is characterized by comprising the following steps,
the method comprises the following steps: dividing one working cycle of the GaN HEMT device into 2 parts, wherein the 1 st part is an on-stage, and the 2 nd part is an off-frequency division stage;
step two: setting the turn-on time Ton _ c and the duty ratio Do of the turn-off frequency division stage, controlling the single turn-off time between 0.1 ns and 5ns, and realizing output by adjusting the number of PWM cycles of the turn-off frequency division stage;
step three: and calculating the overall duty ratio D according to the input and output conditions and the transformer turn ratio, and determining the on-time Ton and the work period T required by the GaN HEMT device according to Ton = Ton _ c + (T-Ton _ c) = Do: (T + Ton _ c) = DT.
2. The method according to claim 1, wherein the GaN HEMT device is applied to a trap effect elimination method in a high-frequency circuit, and the method comprises the following steps: the on-control device and the off-frequency division control device perform synchronous processing on a time sequence, and the on-phase is completed and then the off-frequency division phase is entered.
3. The method according to claim 1, wherein the GaN HEMT device is applied to a trap effect elimination method in a high-frequency circuit, and the method comprises the following steps: and in the second step, the duty ratio Do of the turn-off frequency division stage can be set from 30% to 100% at will, and the single turn-off time is less than the capture time constant of free electrons in the GaN HEMT device.
4. The method according to claim 1, wherein the GaN HEMT device is applied to a trap effect elimination method in a high-frequency circuit, and the method comprises the following steps: the sequential driving control link can also comprise a switching-on control device, a switching-off frequency division control device and a switching-off control device.
5. The method according to claim 4, wherein the GaN HEMT device is applied to a trap effect elimination method in a high-frequency circuit, and the method comprises the following steps: the method for eliminating the trapping effect is characterized by comprising the following steps,
the method comprises the following steps: dividing one working cycle of the GaN HEMT device into 3 parts, wherein the 1 st part is an on-stage, the 2 nd part is an off-frequency division stage, and the 3 rd part is an optional off-stage;
step two: setting an on-time Ton _ c, an off-time Toff _ c and a duty ratio Do of an off frequency division stage, controlling the single off-time to be between 0.1 and 5ns, and realizing output by adjusting the number of PWM cycles of the off frequency division stage;
step three: and calculating the overall duty ratio D according to the input and output conditions and the transformer turn ratio, and determining the required on-time Ton and the working period T of the GaN HEMT device according to Ton = Ton _ c + (T-Ton _ c-Toff _ c) = Do = (T + Ton _ c-Toff _ c) = DT.
6. The method according to claim 5, wherein the GaN HEMT device is applied to a trap effect elimination method in a high-frequency circuit, and the method comprises the following steps: the on-control device, the off-frequency division control device and the off-control device perform synchronous processing on a time sequence, the on-phase is completed and then enters the off-frequency division phase, and the off-frequency division phase is completed and then enters the off-phase.
7. The method according to claim 5, wherein the GaN HEMT device is applied to a trap effect elimination method in a high-frequency circuit, and the method comprises the following steps: and in the second step, the duty ratio Do of the turn-off frequency division stage can be set from 30% to 100% at will, and the single turn-off time is less than the capture time constant of free electrons in the GaN HEMT device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011470986.0A CN112491403B (en) | 2020-12-15 | 2020-12-15 | Capture effect eliminating method for GaN HEMT device applied to high-frequency circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011470986.0A CN112491403B (en) | 2020-12-15 | 2020-12-15 | Capture effect eliminating method for GaN HEMT device applied to high-frequency circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112491403A true CN112491403A (en) | 2021-03-12 |
| CN112491403B CN112491403B (en) | 2021-11-09 |
Family
ID=74917045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011470986.0A Active CN112491403B (en) | 2020-12-15 | 2020-12-15 | Capture effect eliminating method for GaN HEMT device applied to high-frequency circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112491403B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140063862A1 (en) * | 2011-07-28 | 2014-03-06 | Power Integrations, Inc. | Varying switching frequency and period of a power supply controller |
| CN107911010A (en) * | 2017-12-25 | 2018-04-13 | 天津工业大学 | A kind of drive system of GaN power devices |
| CN109067181A (en) * | 2018-07-18 | 2018-12-21 | 东南大学 | The adaptive synchronous commutating control system and control method of active clamp flyback converter |
| CN109918857A (en) * | 2019-04-19 | 2019-06-21 | 南京大学 | The non-linear piecewise temporal model method for building up of GaNHEMT device high frequency dynamic loss |
| CN110112893A (en) * | 2019-05-24 | 2019-08-09 | 华中科技大学 | A kind of driving circuit of manufacturing silicon carbide semiconductor field-effect tube |
-
2020
- 2020-12-15 CN CN202011470986.0A patent/CN112491403B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140063862A1 (en) * | 2011-07-28 | 2014-03-06 | Power Integrations, Inc. | Varying switching frequency and period of a power supply controller |
| CN107911010A (en) * | 2017-12-25 | 2018-04-13 | 天津工业大学 | A kind of drive system of GaN power devices |
| CN109067181A (en) * | 2018-07-18 | 2018-12-21 | 东南大学 | The adaptive synchronous commutating control system and control method of active clamp flyback converter |
| CN109918857A (en) * | 2019-04-19 | 2019-06-21 | 南京大学 | The non-linear piecewise temporal model method for building up of GaNHEMT device high frequency dynamic loss |
| CN110112893A (en) * | 2019-05-24 | 2019-08-09 | 华中科技大学 | A kind of driving circuit of manufacturing silicon carbide semiconductor field-effect tube |
Non-Patent Citations (2)
| Title |
|---|
| A. DELIAS等: ""Low consumption and High Frequency GaN based Gate Driver Circuit with Integrated PWM"", 《ELECTRONICS LETTERS》 * |
| M.A.GONZÁLEZ-SENTÍS等: ""Degradation indicators of power-GaN-HEMT under switching power-cycling"", 《MICROELECTRONICS RELIABILITY》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112491403B (en) | 2021-11-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Musumeci et al. | Switching-behavior improvement of insulated gate-controlled devices | |
| Dymond et al. | Multi-level active gate driver for SiC MOSFETs | |
| EP3503365B1 (en) | Method and device for controlling mosfet switching modules | |
| Le Gallou et al. | Over 10MHz bandwidth envelope-tracking DC/DC converter for flexible high power GaN amplifiers | |
| Sakata et al. | An 80MHz modulation bandwidth high efficiency multi-band envelope-tracking power amplifier using GaN single-phase buck-converter | |
| Kuring et al. | Novel monolithically integrated bidirectional GaN HEMT | |
| Ma | Driving GaN power transistors | |
| Ferrara et al. | Evolution of reverse recovery in trench MOSFETs | |
| CN112491403B (en) | Capture effect eliminating method for GaN HEMT device applied to high-frequency circuit | |
| Zhu et al. | 33.2 A 600V GaN Active Gate Driver with Dynamic Feedback Delay Compensation Technique Achieving 22.5% Turn-On Energy Saving | |
| CN111130514B (en) | Control method and control device for switching device | |
| CN114888373B (en) | Three-level BUCK pulse power supply for electric spark machining | |
| CN113131723B (en) | Half-bridge circuit dead zone optimization setting method suitable for enhanced gallium nitride device | |
| Abuishmais et al. | On understanding and driving SiC power JFETs | |
| Duffy et al. | Discrete supply modulation of a three-stage K-band PA | |
| Chen et al. | Impact of Parasitic Elements on Power Loss in GaN-based Low-voltage and High-current DC-DC Buck Converter | |
| Liu et al. | Comparative evaluation of WBG and Si power devices for the flyback converter | |
| DE19528604C2 (en) | Field effect semiconductor device | |
| Li et al. | Active gate current control for non-insulating-gate WBG devices | |
| Silard et al. | A double-interdigitated GTO switch | |
| DE202016106881U1 (en) | Multi-stage converter with unipolar and bipolar controllable switching elements | |
| Macellari et al. | Dead time generator for synchronous boost converters with GaN transistors | |
| Beye et al. | Analysis and Assessment of temperature effect on an Open Loop Active Gate Voltage Control of GaN Transistor during Turn-ON and Turn-OFF | |
| Zhou et al. | A gate driver with a negative turn off bias voltage for GaN HEMTs | |
| Almpanis et al. | 10kV+ Rated SiC n-IGBTs: Novel Collector-Side Design Approach Breaking the Trade-Off between dV/dt and Device Efficiency |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |