CN105048783B - It is a kind of based on burst pulse demodulation from energy storage IGBT drive circuit - Google Patents
It is a kind of based on burst pulse demodulation from energy storage IGBT drive circuit Download PDFInfo
- Publication number
- CN105048783B CN105048783B CN201510501799.7A CN201510501799A CN105048783B CN 105048783 B CN105048783 B CN 105048783B CN 201510501799 A CN201510501799 A CN 201510501799A CN 105048783 B CN105048783 B CN 105048783B
- Authority
- CN
- China
- Prior art keywords
- circuit
- signal
- pulse
- igbt
- connect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The present invention relates to a kind of driving circuit, it is more particularly to a kind of based on burst pulse demodulation from energy storage IGBT drive circuit.The output signal of signal generating circuit is two-way narrow pulse signal; the signal output end of signal generating circuit, power amplification circuit, high_voltage isolation circuit, stretch circuit and IGBT grid be sequentially connected; the output terminal of comparator circuit and the input terminal of current foldback circuit connect, and the output terminal of current foldback circuit and the input terminal of signal generating circuit connect.The technical program is compared with prior art; the present invention proposes a kind of using High-voltage Isolated Pulse Transformer transmission burst pulse; then the IGBT drive circuit of broad pulse drive signal is realized using stretch circuit; without high_voltage isolation auxiliary DC power supply; and with signal generating circuit and current foldback circuit Coupling Design; when IGBT normal turn-offs and overcurrent protection turn off the characteristics of the biasing of grid back-pressure, the shutdown reliability when collector current is larger is improved.
Description
Technical field
It is more particularly to a kind of that electricity is driven from energy storage IGBT based on burst pulse demodulation the present invention relates to a kind of driving circuit
Road.
Background technology
Igbt (IGBT) drives with voltage, and input impedance is high, and saturation voltage is low, high pressure and electric current
The advantages that big, can work in higher switching frequency, in field of power electronics extensive use.To ensure the job stability of IGBT
And output performance, IGBT drive circuit of good performance are vital.Driving circuit is connected to the control in low potential
Circuit and the IGBT grids in high potential, the design of high-voltage isolating link are to influence entire driving circuit design philosophy
One of an important factor for；In addition, the reverse bias grid voltage in drive waveforms is to ensure the important measures of IGBT reliable turn-offs, in height
It is even more important under pressure high current working condition.
Existing technical solution generally use pulse transformer realizes high-voltage isolating, and pulse transformer can transmit positive electricity
Pulse and negative voltage pulse are pressed, is easy to its grid be made to be in back-pressure bias state when IGBT is turned off, and in transmission pulse signal
While transmit energy, and have the characteristics that isolation voltage is high, transmission delay is small, scalability is good, but its transmittability
It is driven the limitation of signal pulse width and pulse duty factor.An other technical solution is generally made using impulse modulation mode
Pulse transformer only transmits narrow pulse signal, generates broad pulse IGBT drivings using pulse demodulation mode in transformer secondary later
Signal, but also need to be additionally provided high_voltage isolation auxiliary DC power supply in pulse demodulation link and provide energy for IGBT drivings.Have
Document proposes that a kind of narrow pulse signal by pulse transformer transmission is demodulated into broad pulse IGBT drive signals, and do not need to high pressure
Be isolated auxiliary DC power supply IGBT drive circuit mentality of designing, but its be not given at IGBT shutdown when make grid generate back-pressure
The measure of biasing causes IGBT turn-off speeds slower, and drive waveforms control is inaccurate, is turned off when collector current is larger reliable
Property reduce.
General IGBT drive circuit at present, generally there are pulse transformer volume is larger, transmission pulse duty ratio is limited,
Need high_voltage isolation auxiliary DC power supply and without one or more in the problems such as reverse bias grid voltage.
Invention content
The technical problem to be solved in the present invention：There is provided a kind of shutdown reliability high IGBT drive circuit.
Technical scheme of the present invention：The circuit includes signal generating circuit 1, power amplification circuit 2, high_voltage isolation electricity
Road 3, stretch circuit 4, current foldback circuit 5 and comparator circuit 6, the output signal of signal generating circuit 1 are narrow for two-way
Pulse signal, the signal output end of signal generating circuit 1, power amplification circuit 2, high_voltage isolation circuit 3, stretch circuit 4,
And the grid of IGBT is sequentially connected, the output terminal of comparator circuit 6 is connect with the input terminal of current foldback circuit 5, and overcurrent is protected
The output terminal of protection circuit 5 is connect with the input terminal of signal generating circuit 1.
As a kind of improvement of the technical program, power amplification circuit 2 is using bridge push pull circuit.
As a kind of improvement of the technical program, the bridge push pull circuit includes two groups of NPN types and PNP type triode
It combines, the base stage of NPN type triode and emitter are connect respectively with the base stage of PNP type triode and emitter in every group, three poles
The base stage of pipe combination is connect as input terminal with signal generating circuit, the emitter that triode combines as output terminal and high pressure every
It is connected from circuit.
As a kind of improvement of the technical program, high_voltage isolation circuit 3 employs pulse transformer mode.
As a kind of improvement of the technical program, stretch circuit includes full bridge rectifier, capacitance, resistance and P ditches
Road field-effect tube, the input terminal of full bridge rectifier is connect with the first secondary of high_voltage isolation circuit 3, full bridge rectifier it is negative
End is connected to ground, and anode is connect by resistance with capacitance C11；The negative terminal of capacitance C11 is connected to ground, and anode is imitated by P-channel field
It should manage and be connected with the grid of IGBT；Stretch circuit is connect with the second secondary of high_voltage isolation circuit.
Beneficial effects of the present invention：Compared with prior art, the present invention proposes a kind of using high_voltage isolation the technical program
Pulse transformer transmits burst pulse, and the IGBT drive circuit of broad pulse drive signal, nothing are then realized using stretch circuit
High_voltage isolation auxiliary DC power supply is needed, and with signal generating circuit and current foldback circuit Coupling Design, IGBT normal turn-offs
The characteristics of grid back-pressure biases when being turned off with overcurrent protection, improves the shutdown reliability when collector current is larger.
Description of the drawings
Fig. 1 is driving circuit structure schematic diagram；
Fig. 2 is driving circuit impulse waveform schematic diagram；
Fig. 3 is pulse Turn-on and Turn-off generation circuit figure；
Fig. 4 is stretch circuit figure；
Fig. 5 is stretch circuit working condition；
Fig. 6 is stretch circuit oscillogram.
Specific embodiment
The technical program is described in further details below in conjunction with the accompanying drawings.
As shown in Figure 1, it is a kind of based on burst pulse demodulation from energy storage IGBT drive circuit, it include signal generating circuit 1,
Power amplification circuit 2, high_voltage isolation circuit 3, stretch circuit 4, current foldback circuit 5 and comparator circuit 6, such as Fig. 1 institutes
Show.First signal output end of signal generating circuit 1 is connected with the first signal input part of power amplification circuit 2, and signal occurs
The second signal output terminal of circuit 1 is connected with the second signal input terminal of power amplification circuit 2, and the first of power amplification circuit 2
Signal output end is connected with the first signal input part of high_voltage isolation circuit 3, the second signal output terminal of power amplification circuit 2 and
The second signal input terminal connection of high_voltage isolation circuit 3, signal output end and the stretch circuit 4 of high_voltage isolation circuit 3
Signal input part connects, and the output terminal of stretch circuit 4 and the grid of IGBT connect.The output terminal and mistake of comparator circuit 6
The input terminal connection of stream protection circuit 5, the output terminal of current foldback circuit 5 are connect with the input terminal of signal generating circuit 1.
The waveform diagram that driving circuit generates is as shown in Fig. 2, wherein PONAnd POFFIt is two that signal generating circuit 1 generates
Road pulse signal, PTFor 3 input terminal of high_voltage isolation circuit or the pulse signal of output terminal, PGTo be applied to the driving of IGBT grids
Signal, POCFor the pulse signal of the electric 5 tunnels output of overcurrent protection, when overcurrent happens, in POCUnder the action of signal, POFF、PT
And PGCertain variation can all occur for the phase of pulse in signal, so as to rapidly switch off IGBT in short circuit generation moment, avoid it
Damage.Signal generating circuit 1 generates the two-way narrow pulse signal with control signal same frequency, respectively signal PON and signal
POFF；Power amplification circuit 2 is used to signal PON and signal POFF realizing bridge power amplification, output signal PT to high pressure every
From circuit 3, stretch circuit 4 is used to the output signal of high_voltage isolation circuit 3 being converted to drive signal PG；Overcurrent condition is sent out
After life, to current foldback circuit 5, current foldback circuit 5 outputs signal to signal and electricity occurs 6 output signal POC of comparator circuit
Road 1 makes it additionally export a burst pulse on signal POFF, in figure shown in dotted line, so as to the upper additional generations one of signal PT
Pulse, final signal PG additionally export a negative pulse.
Fig. 3 show the electricity of signal generating circuit 1, power amplification circuit 2, high_voltage isolation circuit 3 and current foldback circuit 5
Lu Tu.Wherein signal generating circuit 1 mainly includes integrated circuit CD4098 and partial ohmic capacity cell；Power amplification circuit 2
Mainly it is made of triode；High_voltage isolation circuit 3 employs pulse transformer mode, and is voltage-source type pulse transformer；It crosses
Stream protection circuit 5 is mainly made of triode and partition capacitance resistance.
Fig. 4 show stretch circuit figure, by resistance, capacitance, diode, triode, voltage-stabiliser tube and field-effect tube etc.
Passive element forms.Stretch circuit 4 is in PONIGBT is quickly opened during arrival, in POFFPulse rapidly switches off IGBT when arriving,
And it has the function of to store input pulse energy, in PONPulse and POFFEnergy is stored during pulse, in PONPulse and POFF
It powers between pulse to IGBT grids, in POFFStop charge and discharge process after end-of-pulsing.
Fig. 5 show stretch circuit 4 in Turn-on stage pulses, pulse broadening stage, Turn-off stage pulses
With the circuit flow graph after Turn-off pulses during four working stages.
Fig. 6 is the voltage waveform of capacitance C11 and to be output in the stretch circuit 4 obtained using PSpice software emulations
The voltage waveform of IGBT grids.As it can be seen that after the rising edge of Turn-on pulses arrives in pulse transformer output signal, IGBT
Grid voltage waveform rapidly rises to positive voltage by no-voltage, and IGBT is connected, and capacitance C11 is in charged state, in Turn-on
After end-of-pulsing, capacitance C11 is in discharge condition, and grid voltage waveform maintains high voltage, and IGBT also maintains to be connected.Turn-
After off pulses arrive, capacitance C11 is in charged state again, but IGBT grid voltages are rapidly by just becoming negative, reliable turn-off IGBT.
After Turn-off end-of-pulsings, capacitance C11 terminates charged state, at this point, IGBT grids are slowly varying to zero by negative voltage, effectively
Voltage oscillation caused by inhibiting magnetic core of pulse transformer Reverse recovery.
Signal generating circuit 1 generates the two-way narrow pulse signal with control signal same frequency, respectively signal PON and signal
POFF；Power amplification circuit 2 is used to signal PON and signal POFF realizing bridge power amplification, output signal PT to high pressure every
From circuit 3, stretch circuit 4 is used to the output signal of high_voltage isolation circuit 3 being converted to drive signal PG；Overcurrent condition is sent out
After life, to current foldback circuit 5, current foldback circuit 5 outputs signal to signal and electricity occurs 6 output signal POC of comparator circuit
Road 1 makes it additionally export a burst pulse on signal POFF, in figure shown in dotted line, so as to the upper additional generations one of signal PT
Pulse, final signal PG additionally export a negative pulse.
Illustrate present embodiment with reference to Fig. 3, its signal generating circuit 1 include chip CD4098-1, chip CD4098-2,
Chip CD4098-3, resistance R1, resistance R2, resistance R3, resistance R4, resistance R5, resistance R6, resistance R7, capacitance C1, capacitance C2,
Capacitance C3, NPN type triode Q5, NPN type triode Q6, diode D1, DC power supply VCC1 and DC power supply VCC2；
- Tr the ends and Reset ends of CD4098-1 is connect with power supply VCC1, and one end of capacitance C1 and the Cx ends of CD4098-1 connect
It connects, the other end of capacitance C1 and the RxCx ends of CD4098-1 and one end of resistance R1 connect, and the other end and the VCC1 of resistance R1 connect
It connects；The Q ends of CD4098-1 and the+Tr ends of CD4098-2 and one end of resistance R5 connect ,+Tr ends and the control signal of CD4098-1
Connection；
- Tr the ends and Reset ends of CD4098-2 is connect with VCC1, and one end of capacitance C2 and the Cx ends of CD4098-2 connect,
The other end of capacitance C2 and the RxCx ends of CD4098-2 and one end of resistance R2 connect, and the other end and the power supply VCC of resistance R2 connect
It connecing, the Q ends of CD4098-2 are connect with one end of diode D1, one end of resistance R5 and the Q ends of CD4098-1 and CD4098-2+
Tr ends connect, the other end of resistance R5 as signal generating circuit 1 the first signal input part and current foldback circuit 5 first
Signal output end connects, while also serves as the first signal output end of signal generating circuit 1 and the first letter of power amplification circuit 2
The connection of number input terminal；
+ Tr ends the ground connection of CD4098-3, the Reset ends of CD4098-3 are connect with VCC2, one end of capacitance C3 and CD4098-
3 Cx ends connection, the other end of capacitance C3 and the RxCx ends of CD4098-3 and one end of resistance R3 connect, one end of resistance R3 with
The RxCx ends of CD4098-3 and one end connection of capacitance C3, the other end of resistance R3 are connect with VCC2, Q ends and the electricity of CD4098-3
One end connection of R4 is hindered, one end of resistance R4 and the Q ends of CD4098-3 connect, and the other end of resistance R4 is as signal generating circuit
1 second signal output terminal is connect with the second signal input terminal of power amplification circuit 2；- Tr the ends of CD4098-3 are as signal
The second signal input terminal that circuit 1 occurs is connect with the anode of the second signal output terminal of overcurrent protection electric current 5 and diode D1；
Control signal is input to the+Tr ends of chip CD4098-1, and the Q ends of chip CD4098-1 is made to export and with controlling signal
The pulse signal of same frequency and rising edge synch, pulse width are determined by resistance R1 and capacitance C1；The Q ends of chip CD4098-1
+ Tr the ends of chip CD4098-2 are connected to, the Q ends of chip CD4098-2 is made to export and control signal same frequency and rising edge synch
Pulse signal, pulse width determines by resistance R2 and capacitance C2；The Q ends of chip CD4098-2 are connected to by diode D1
- Tr the ends of chip CD4098-3 when not having over-current signal, make the Q ends of chip CD4098-3 export and control signal same frequency
And the synchronouss pulse signal of Q ends output pulse falling edge of rising edge and chip CD4098-2, pulse width by resistance R3 with
Capacitance C3 is determined；The Q ends output pulse signal of the Q ends output pulse signal PON of chip CD4098-1, chip CD4098-3
POFF。
Illustrate present embodiment with reference to Fig. 3, its current foldback circuit 5 includes resistance R6, resistance R7, NPN type triode
Q5, NPN type triode Q6 and DC power supply VCC2；1 Coupling Design of current foldback circuit 5 and signal generating circuit, overcurrent hair
When raw, 5 direct trigger signal of current foldback circuit occurs circuit 1 and generates shutdown pulse to rapidly switch off IGBT；
One end of resistance R6 is connect with the base stage of NPN type triode Q5 and the base stage of NPN type triode Q6, and resistance R6's is another
One end is connect as the input terminal of current foldback circuit 5 with over-current signal；The emitter ground connection of NPN type triode Q5, collector
The first signal output end as current foldback circuit 5 is connect with the first signal input part of signal generating circuit 1；NPN type three
The emitter ground connection of pole pipe Q6, one end of resistance R7 are connect with VCC2, and the other end is defeated as the second signal of current foldback circuit 5
Outlet is connect with the second signal input terminal of signal generating circuit 1 and the collector of NPN type triode Q6；
When overcurrent happens, comparator circuit output pulse signal to current foldback circuit 5, NPN type triode Q5
Conducting, collector are in low level, and the first output terminal for making signal generating circuit 1 is low level；Meanwhile NPN type triode
Q6 is connected, and collector sports low level by high level, makes-Tr the ends of 1 chips CD4098-3 of signal generating circuit by height
Level becomes low level, and the Q ends of chip CD4098-3 is finally made additionally to export a rising edge and over-current signal rising edge synch
Pulse.
Its power amplification circuit 2 has faster rising edge under using bridge push pull circuit, the pulse of output
Edge drops.Power amplification circuit 2 includes NPN type triode Q1, PNP type triode Q2, NPN type triode Q3, PNP type triode
Q4, DC power supply VCC1 and DC power supply VCC2；
The collector of NPN type triode Q1 is connect with power supply VCC1, the grounded collector of PNP type triode Q2, NPN type three
The base stage of pole pipe Q1 is connect with the base stage of PNP type triode Q2, and the first input end as power amplification circuit is sent out with signal
The first signal output end connection of raw circuit 1, the emitter of NPN type triode Q1 are connect with the emitter of PNP type triode Q2,
And the first output terminal as power amplification circuit 2 is connect with the first signal input part of high_voltage isolation circuit 3；
The collector of NPN type triode Q3 is connect with power supply VCC2, the grounded collector of PNP type triode Q4, NPN type three
The base stage of pole pipe Q3 is connect with the base stage of PNP type triode Q4, and the second signal input terminal as power amplification circuit 2 and letter
The second signal output terminal connection of circuit 1, the emitter of NPN type triode Q3 and the emitter of PNP type triode Q4 number occurs
Connection, and the first signal output end as power amplification circuit 2 is connect with the first signal input part of high_voltage isolation circuit 3；
When pulse signal PON is high potential, NPN type triode Q1 and PNP type triode Q4 are in the conduction state, NPN
Type triode Q3 and PNP type triode Q2 is in cut-off state, and the first signal output end of power amplification circuit 2 is high level,
Second signal output terminal is low level；When pulse signal POFF is high potential, NPN type triode Q3 and PNP type triode Q2
In the conduction state, NPN type triode Q1 and PNP type triode Q4 are in cut-off state, the first signal of power amplification circuit 2
Output terminal is low level, and second signal output terminal is high level；
Illustrate present embodiment with reference to Fig. 3, its high_voltage isolation circuit 3 is pulse transformer mode, and is voltage-type arteries and veins
Transformer is rushed, is driven, and can ensure that each IGBT is open-minded while can realizing more IGBT by increasing the quantity of pulse transformer
With the synchronism of shutdown；
High_voltage isolation circuit 3 is opposite with its second signal output terminal institute by the first signal output end of power amplification circuit 2
The pulse signal PT of generation carries out high_voltage isolation transmission, and using pulse transformer mode, the primary and secondary side of transformer uses
Flexible high pressure line, it is easy to accomplish high-voltage isolating realizes the transmission of energy while signal is transmitted, do not need to additional high pressure
Auxiliary DC power supply is isolated, and due to being narrowed in the pulse signal PT of transmission comprising positive voltage burst pulse Turn-on and negative electricity
The combination of transmitted of pulse Turn-off, positive voltage pulse and negative voltage pulse can effectively reduce the volume of high voltage isolating transformer
And weight；The pulse transformer includes a primary side and two secondary, mutually electrical isolation between each winding.
Illustrate present embodiment with reference to Fig. 4, its stretch circuit 5 includes resistance R11, resistance R12, resistance R13, electricity
Hinder R14, resistance R15, resistance R16, resistance R17, resistance R18, resistance R19, resistance R20, capacitance C11, NPN type triode Q11,
NPN type triode Q12, PNP type triode Q13, diode D11, diode D12, diode D13, diode D14, diode
D15, diode D17, diode D18, diode D16, diode D16, voltage-stabiliser tube D16, voltage-stabiliser tube D19, voltage-stabiliser tube D20, P ditch
Road field-effect tube FET1 and P-channel field-effect transistor (PEFT) pipe FET2；
The input terminal of the full bridge rectifier of diode D11, D12, D13 and D14 composition and the first of high_voltage isolation circuit 3
Secondary connects, the negative terminal of full bridge rectifier is connected to ground, and anode is charged by R11 to storage capacitor C11；Capacitance C11's is negative
End is connected to ground, and anode is connected by FET2, FET1, R18, D18 with the grid of IGBT；One end of resistance R16, triode Q12
Emitter, diode D19 cathode connect with one end (4 end) of the second secondary of high_voltage isolation circuit 3, ground and the second secondary
The other end (5 end) connection；One end of resistance R20 is connect with the anode of capacitance C11 and the source electrode of FET2, the other end and resistance
One end of R12 and the gate pole connection of FET2, the other end of R12 are connected to ground；One end of resistance R13 drains with FET2 and FET1
Source electrode connects, and the other end is connect with one end of resistance R14 and the gate pole of FET1；The collector of triode Q11 and the other end of R14
The cathode of connection, emitter and D16 connect, the other end connection of the cathode and R16 of base stage and D15；The anode of D16 connects with ground
It connects, the anode of D15 and one end of R15 connect；The drain electrode connection of one end of R18 and the other end of R15 and FET1, R18's is another
End is connect with the base stage of the anode of diode D17, the anode of diode D18 and triode Q13；The cathode of diode D17 and three
The collector connection of pole pipe Q12, one end of resistance R17 are connect with the base stage of triode Q12, and the other end is connected to ground；Triode
The emitter of Q13 is connect with the cathode of diode D18 and the grid of IGBT, and collector is connect with the anode of diode D19；Voltage stabilizing
Pipe D20 is connected with D21 anti-series, later the grid and emitter in parallel with IGBT, the grid and emitter of resistance R19 and IGBT
It is in parallel；
Turn-on pulses and Turn-off pulses in signal PG are input to pulse broadening electricity by high_voltage isolation circuit 3
Road 4；With reference to Fig. 5 illustrate stretch circuit 4 during Turn-on pulses, pulse broadening during (Turn-on pulse falling edges
Between Turn-off rising edge of a pulses), during Turn-off pulses, after Turn-off end-of-pulsings altogether four-stage when
Working condition；
To avoid IGBT gate drive voltage values relatively low, stretch circuit 4 devises the precharge ring of storage capacitor C11
Section；Only when threshold value of the voltage of C11 higher than setting, FET2 can just be connected, and such C11 can just be supplied to IGBT grids
Electricity, it is ensured that IGBT will not work in linear condition；
After pre-charge process, stretch circuit 4 enters the Turn-on pulsed operation stages, as shown in Figure 5 a；High pressure
First secondary of isolation circuit 3 is charged by full bridge rectifier and resistance R11 to capacitance C11, while the second secondary passes through electricity
Triode Q11 is connected in resistance R16, at this point, capacitance C11 makes field-effect tube by FET2, R13, R14, Q11 and voltage-stabiliser tube D16
The gate pole of FET1 bears negative voltage relative to source electrode, turns it on；FET1 conducting after, capacitance C11 just by field-effect tube FET2,
Field-effect tube FET1, resistance R18, diode D8 are applied to the grid of IGBT, and IGBT is connected.The conducting speed of IGBT can pass through
Resistance R18 is adjusted；
After Turn-on end-of-pulsings, stretch circuit 4 enters pulse and is widened the stage, as shown in Figure 5 b；At this time high pressure every
4 ends of the second secondary from circuit 3 become zero potential from high potential, but the base stage of triode Q11 remains as positive voltage bias,
Q11 still maintains to be connected, and FET1 also maintains to be connected, and capacitance C11 continues as IGBT drivings and provides energy, maintains IGBT conductings；
When Turn-off pulses arrive, stretch circuit 4 enters the Turn-off pulsed operation stages, such as Fig. 5 c institutes
Show；4 ends of the second secondary of high_voltage isolation circuit 3 become negative potential from zero potential at this time, the base voltage of triode Q11 also under
It moves negative potential to, ends Q11, and then FET1 ends, capacitance C4 no longer powers to IGBT grids；Simultaneously in Turn-off pulses
Under the action of, triode Q12 and Q13 conducting, the grid of IGBT discharges rapidly, and realizes reverse charging, generates negative sense grid voltage,
Make the fast and reliable shutdowns of IGBT, IGBT turn-off speeds are controlled by the conducting speed of triode Q12；
The current direction in stage is as fig 5d after Turn-off end-of-pulsings；After Turn-off end-of-pulsings, high pressure
4 ends of the second secondary of isolation circuit 3 become zero potential from low potential, triode Q12 and Q13 cut-off, IGBT grids it is reversed
Charging process terminates, into back discharge process；At this point, the back discharge process of grid capacitance can only be realized by resistance R19,
And it will not be influenced by generated oscillation during magnetic core of pulse transformer Reverse recovery, it is suppressed that IGBT misleads again
Possibility, the speed of back discharge process can be adjusted by resistance R19；
When overcurrent condition occurs, signal PT additionally one Turn-off pulse of output makes rapidly IGBT realize grid back-pressure
Biasing, ensures the fast and reliable shutdown of IGBT, current direction is identical with the Turn-off pulsed operation stages；
Fig. 6 show the driving voltage wave of the capacitance C11 voltage waveforms and IGBT grids using PSpice emulation acquisitions
Shape；The pulse width of Turn on and Turn off burst pulses used is 2 μ s, it can be seen that in Turn on and Turn off
During pulse, capacitance C11 is in charged state, is widened the stage in pulse, and capacitance C11 is in discharge condition, IGBT grid voltages
IGBT is connected between Turn on rising edges and Turn off rising edges in waveform, broad pulse driving force is obtained, in Turn
It is biased during off pulses in back-pressure, ensures the fast and reliable shutdown of IGBT, after Turn off, IGBT grids are by anti-
Pressure biasing is gradually restored to zero potential, avoids the concussion of grid voltage；
Although the present invention is described by above example, the present invention is not limited to, is not departing from the present invention's
In the case of spirit and scope, those of ordinary skill in the art can make various modifications and variations to the present invention.Therefore, originally
Invention is intended to cover the improvement and variation fallen within the scope of the appended claims and its equivalent.
Claims (5)
1. it is a kind of based on burst pulse demodulation from energy storage IGBT drive circuit, it is characterized in that：The circuit includes signal
Circuit (1), power amplification circuit (2), high_voltage isolation circuit (3), stretch circuit (4), current foldback circuit (5) and compare
Device circuit (6), the output signal of signal generating circuit (1) is two-way narrow pulse signal, and the signal of signal generating circuit (1) exports
The grid at end, power amplification circuit (2), high_voltage isolation circuit (3), stretch circuit (4) and IGBT is sequentially connected, than
Output terminal compared with device circuit (6) is connect with the input terminal of current foldback circuit (5), the output terminal and letter of current foldback circuit (5)
Number occur circuit (1) input terminal connection；
Two independent power supply VCC1 and VCC2 are connected in signal generating circuit (1)；
Signal generating circuit (1) generates two-way pulse width and the independently adjustable narrow arteries and veins of phase difference according to the frequency of control signal
Rush signal PONAnd POFF, narrow pulse signal PONAnd POFFAfter power amplification circuit (2) amplification, become positive inverted burst signal all the way,
Stretch circuit (4) is transmitted to by high_voltage isolation circuit (3), stretch circuit (4) is according to PONAnd POFFRising edge it is true
That determines IGBT drive waveforms opens moment and shutdown moment；Current foldback circuit (5) and signal generating circuit (1) Coupling Design,
In POFFRising edge time IGBT grid generate negative voltage pulse.
2. it is according to claim 1 it is a kind of based on burst pulse demodulation from energy storage IGBT drive circuit, it is characterized in that：Power
Amplifying circuit (2) is using bridge push pull circuit, and there are two input terminal, input and two-way narrow pulse signal P for toolONAnd POFF
It is corresponding, and two bridge arms connect VCC1 and VCC2 respectively.
3. it is according to claim 2 it is a kind of based on burst pulse demodulation from energy storage IGBT drive circuit, it is characterized in that：It is described
Bridge push pull circuit include two groups of NPN types and PNP type triode and combine, the base stage and emitter of NPN type triode in every group
It is connect respectively with the base stage of PNP type triode and emitter, the base stage of triode combination is as input terminal and signal generating circuit
Connection, the emitter of triode combination are connect as output terminal with high_voltage isolation circuit.
4. it is according to claim 1 it is a kind of based on burst pulse demodulation from energy storage IGBT drive circuit, it is characterized in that：High pressure
Isolation circuit (3) employs pulse transformer mode, and secondary number is 2 integral multiple, at least 2.
5. it is according to claim 1 it is a kind of based on burst pulse demodulation from energy storage IGBT drive circuit, it is characterized in that：Pulse
Widening circuit includes full bridge rectifier, capacitance, resistance and P-channel field-effect transistor (PEFT) pipe, the input terminal and high pressure of full bridge rectifier
The first secondary connection of isolation circuit (3), the negative terminal of full bridge rectifier are connected to ground, and anode is connected by resistance and capacitance C11
It connects；The negative terminal of capacitance C11 is connected to ground, and anode is connected by P-channel field-effect transistor (PEFT) pipe with the grid of IGBT；Stretch circuit exists
PONAnd POFFEnergy storage is realized by capacitance C11 for the high level moment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510501799.7A CN105048783B (en) | 2015-08-14 | 2015-08-14 | It is a kind of based on burst pulse demodulation from energy storage IGBT drive circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510501799.7A CN105048783B (en) | 2015-08-14 | 2015-08-14 | It is a kind of based on burst pulse demodulation from energy storage IGBT drive circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105048783A CN105048783A (en) | 2015-11-11 |
| CN105048783B true CN105048783B (en) | 2018-07-10 |
Family
ID=54455070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510501799.7A Active CN105048783B (en) | 2015-08-14 | 2015-08-14 | It is a kind of based on burst pulse demodulation from energy storage IGBT drive circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105048783B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107425837A (en) * | 2017-07-27 | 2017-12-01 | 北京航空航天大学 | A kind of high_voltage isolation type MOSFET drive circuits |
| CN107843890A (en) * | 2017-10-31 | 2018-03-27 | 海鹰企业集团有限责任公司 | Sonar transmission circuit |
| CN210578247U (en) * | 2019-07-26 | 2020-05-19 | 深圳驭龙电焰科技有限公司 | Protection circuit and device |
| CN110601509B (en) * | 2019-10-12 | 2021-09-03 | 阳光电源股份有限公司 | IGBT drive protection circuit and fault protection method thereof |
| CN110850201B (en) * | 2019-10-31 | 2021-09-03 | 苏州浪潮智能科技有限公司 | High-frequency narrow pulse detection locking circuit and method |
| CN111276952B (en) * | 2020-01-19 | 2022-03-08 | 上海华虹宏力半导体制造有限公司 | ESD protection circuit |
| CN113114110B (en) * | 2021-04-23 | 2023-05-05 | 长城电源技术有限公司 | Power supply driving module and power supply equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101640527A (en) * | 2009-08-19 | 2010-02-03 | 广州金升阳科技有限公司 | IGBT driving circuit capable of realizing signal transmission by pulse modulation demodulation system |
| CN101640526A (en) * | 2009-08-19 | 2010-02-03 | 广州金升阳科技有限公司 | IGBT driving circuit embedded with isolating source |
| CN102832917A (en) * | 2012-08-21 | 2012-12-19 | 台达电子工业股份有限公司 | Switch drive circuit |
| CN103280948A (en) * | 2013-06-05 | 2013-09-04 | 广州金升阳科技有限公司 | Impulse modulation magnetic separation drive circuit |
-
2015
- 2015-08-14 CN CN201510501799.7A patent/CN105048783B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101640527A (en) * | 2009-08-19 | 2010-02-03 | 广州金升阳科技有限公司 | IGBT driving circuit capable of realizing signal transmission by pulse modulation demodulation system |
| CN101640526A (en) * | 2009-08-19 | 2010-02-03 | 广州金升阳科技有限公司 | IGBT driving circuit embedded with isolating source |
| CN102832917A (en) * | 2012-08-21 | 2012-12-19 | 台达电子工业股份有限公司 | Switch drive circuit |
| CN103280948A (en) * | 2013-06-05 | 2013-09-04 | 广州金升阳科技有限公司 | Impulse modulation magnetic separation drive circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105048783A (en) | 2015-11-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105048783B (en) | It is a kind of based on burst pulse demodulation from energy storage IGBT drive circuit | |
| CN111404529A (en) | Segmented direct gate driving circuit of depletion type GaN power device | |
| CN110048699A (en) | A kind of gate driving circuit inhibiting the bridge arm crosstalk of GaN half-bridge module | |
| CN101267156B (en) | Separation driving circuit with discharging channel | |
| CN110311572A (en) | A kind of transformer isolation drive control method and its isolated drive circuit | |
| CN104682763A (en) | Method and device for high-speed off of energy-feedback constant-voltage clamp | |
| CN106024497B (en) | Auxiliary circuit for high-short-circuit turn-off direct-current circuit breaker and control method thereof | |
| CN102064047B (en) | Relay and switching tube parallel circuit suitable for high-pressure direct current occasion | |
| CN201656951U (en) | Insulated gate bipolar translator drive circuit | |
| CN104035026B (en) | Mixing chopper no-voltage change of current characteristic test apparatus and test method | |
| CN105871230B (en) | A kind of driving circuit of SiC MOSFET pipes | |
| CN201804798U (en) | A relay | |
| CN101741362B (en) | Insulated gate device control method and circuit thereof | |
| Liu et al. | Design and comparison of passive gate driver solution for series-connected power devices in DC circuit breaker applications | |
| CN104201562A (en) | Semiconductor laser driving source with temperature compensation | |
| CN109462386B (en) | SiC MOSFET drive circuit applied to high-temperature environment | |
| Hou et al. | An ultrafast discrete protection circuit utilizing multi-functional dual-gate pads of gan hemts | |
| CN108429435A (en) | A kind of MOSFET isolated drive circuits | |
| CN111555596B (en) | SiC MOSFET grid crosstalk suppression driving circuit with adjustable negative pressure | |
| CN205584154U (en) | RSD trigger circuit based on pulse step up transformer and magnetic switch | |
| CN106936416A (en) | A kind of reverse switch transistor triggers circuit | |
| CN109150139B (en) | Narrow pulse width pulse output circuit | |
| CN208353210U (en) | A kind of MOSFET isolated drive circuit | |
| CN114552968A (en) | Self-adaptive bootstrap charging circuit suitable for GaN driving chip | |
| CN208299680U (en) | A kind of driving circuit for high voltage charging power supply inversion circuit main switch IGBT |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |