CN101741362B - Insulated gate device control method and circuit thereof - Google Patents
Insulated gate device control method and circuit thereof Download PDFInfo
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Abstract
The invention discloses an insulated gate device control method and a circuit thereof used for controlling a semiconductor device with an insulated gate structure to serve as an amplifier with the amplification factor of k, wherein k is a natural number greater than 1. The circuit is composed of an attenuation circuit and a first subtractor circuit, wherein the attenuation factor of the attenuation circuit is k, the input end of the attenuation circuit is coupled with a collector of the isolated gate device, the output end thereof is coupled with the normal phase input end of the first subtractor circuit, the inverted input end of the first subtractor circuit is coupled with a reference voltage needing to be amplified, and the output end of the first subtractor circuit is coupled with the grid of the isolated gate device to lead the isolated gate device to work in an active area in a specific time and cause the voltage and current values of the isolated gate device in a working state to be different from the voltage and the current values in the traditional isolated gate device switching mode so as to amplify signals input randomly by a specific factor. The invention broadens the application occasions of the isolated gate device and enables the isolated gate device to be used as a high-voltage and large-current amplifier with a certain amplification factor.
Description
Technical field
The present invention relates to method and circuit thereof that a kind of control has the large power semiconductor device of insulated gate structure.
Background technology
Igbt (Insulated Gate Bipolar Transistor; Abbreviate IGBT as) the present power semiconductor that has become a kind of main flow; Be by bipolar junction transistor (Bipolar JunctionTransistor; Be abbreviated as BJT; Be called transistor again) and the compound full-control type voltage driven type power semiconductor formed of metal oxide semiconductor field effect tube (MetalOxide Semicoductor Field Effect Transistor is abbreviated as MOSFET), have concurrently MOSFET high speed, high input impedance, be prone to drive and the big electric current of BJT, the characteristics of high withstand voltage, low on-state pressure drop.
For this reason; A series of good characteristics such as the voltage-type driving that IGBT had, high input impedance, switching speed is fast, the switch power loss is little, on-state voltage drop is little make it become the ideal power switching device that middle and high power switch power supply, frequency converter, inverter, induction heating, active filter, household electrical appliance etc. need the transformation of electrical energy occasion.
Generally, IGBT has in the circuit of power electronics or system and turns on and off two kinds of stable states.In turning on and off the transfer process of two states, transient state can occur opening and turn-off transient state.For opening, turn-off two kinds of stable states, its voltage, current value confirm do not have uncertainty by external circuit; Yet for opening, turn-off two kinds of transient state situation, the track of its voltage and current has uncertainty, and this not only also has much relations with the relating to parameters of external circuit and the parameter of IGBT self.Usually the use of IGBT is confined to as switching device, rather than high-voltage amplifier spare.
The subject matter that high-voltage amplifier of the prior art exists is: after output voltage surpassed kilovolt, output current is milliampere level often, makes its power very low, can't work in the occasion that needs high pressure, big electric current.
Summary of the invention
Technical problem to be solved by this invention is exactly in order to overcome above deficiency, proposes a kind of insulated gate device control method and circuit thereof, and the semiconductor device with insulated gate structure is used as high power amplifier.
Technical problem of the present invention solves through following technical scheme:
The present invention proposes a kind of insulated gate device control method, and being used to control the semiconductor device with insulated gate structure is the amplifying device of k as multiplication factor, and wherein, k is the natural number greater than 1, may further comprise the steps:
A) attenuation step: the collector emitter voltage of insulated gate device is obtained feedback voltage after decaying, feedback voltage and collector emitter voltage relation satisfy:
B) introduce the reference voltage step: introducing needs the reference voltage of amplification;
C) comparison step: comparison reference voltage and feedback voltage, export both difference, obtain first difference voltage;
D) the output result does processing and amplifying amplification procedure: with step C), obtains amplifying voltage, and processing and amplifying makes the magnitude of voltage of amplifying voltage between negative-grid puncture voltage and postivie grid puncture voltage;
E) closed loop input step: amplifying voltage is input between the grid and emitter of insulated gate device; Make the collector electrode of insulated gate device constitute closed loop to grid; Final control insulated gate device works in the stable state of " active area ", and the collector emitter voltage of insulated gate device is the reference voltage that amplifies after k times.
In the optimized technical scheme,
Said step B) reference voltage range in is Vmin/k＜Vi＜Vmax/k, and wherein Vmin is the minimum value of insulated gate device active area collector emitter voltage, and Vmax is the maximum of insulated gate device active area collector emitter voltage.
Said steps A) decay in realizes through attenuator circuit; Said attenuator circuit comprises that at least one falls L shaped bleeder circuit by what two resistance were formed, and the resistance proportionate relationship of said two resistance satisfies that to make said bleeder circuit output voltage values be
condition doubly of bleeder circuit input voltage value.
In the further optimized technical scheme,
Said step B) also comprise step B1 in) the introducing grid voltage; Said step C) is comparison reference voltage and feedback voltage, exports both differences, obtain first difference voltage, first difference voltage and grid voltage are compared, export both differences, obtain second difference voltage.
Said step B) also comprise step B1 in) introducing collector emitter voltage rate of change; Said step C) is comparison reference voltage and feedback voltage, exports both differences, obtain first difference voltage, first difference voltage and collector emitter voltage rate of change are superposeed, obtain first superimposed voltage.
Said step B) also comprise step B2 in) introducing collector emitter voltage rate of change; Said step C) is comparison reference voltage and feedback voltage; Export both differences, obtain first difference voltage, first difference voltage and grid voltage are compared; Export both differences; Obtain second difference voltage, said second difference voltage and collector emitter voltage rate of change are superposeed, obtain second superimposed voltage.
The present invention proposes a kind of insulated gate device control circuit, and being used to control the semiconductor device with insulated gate structure is the amplifying device of k as multiplication factor, wherein; K is the natural number greater than 1; Comprise the attenuator circuit and first subtractor circuit, said attenuator circuit receives the collector emitter voltage of insulated gate device, its decay k is outputed to the normal phase input end of first subtractor circuit after doubly; The reference voltage that need amplify is input to the inverting input of first subtractor circuit; First subtractor circuit is done subtraction and processing and amplifying simultaneously to two input terminal voltages, obtains first difference voltage, and it satisfies the condition between negative-grid puncture voltage and postivie grid puncture voltage; Said first difference voltage is input between the grid and emitter of insulated gate device; The collector electrode that makes insulated gate device constitutes closed loop to grid, finally controls in the stable state that insulated gate device works in " active area ", and the collector emitter voltage of insulated gate device is and amplifies the reference voltage of k after doubly.
In the optimized technical scheme,
Said attenuator circuit comprises that at least one falls L shaped bleeder circuit by what two resistance were formed; The resistance proportionate relationship of said two resistance satisfies that to make said bleeder circuit output voltage values be
condition doubly of bleeder circuit input voltage value, the said also shunt capacitance of each resistance two ends that falls in the L shaped bleeder circuit.
In the further optimized technical scheme,
Also comprise grid feedback comparison circuit; Said grid feedback comparison circuit first termination is received the grid voltage of insulated gate device; Second termination is received first difference voltage that said first difference produces circuit; Relatively export the difference of two input terminal voltages, obtain second difference voltage, be input to the next stage processing of circuit.
Comprise that also voltage change ratio produces circuit; It is differential circuit that said voltage change ratio produces circuit; The collector emitter voltage rate of change of its output and said first difference produce first difference voltage stack of circuit, obtain first superimposed voltage, are input to the next stage processing of circuit.
Comprise that also voltage change ratio produces circuit; It is differential circuit that said voltage change ratio produces circuit; Second difference voltage stack of the collector emitter voltage rate of change of its output and the output of said grid feedback comparison circuit obtains second superimposed voltage, is input to the next stage processing of circuit.
The device that also comprises the branch compression functions; The device of said minute compression functions is resistance or slide rheostat; First end coupling of the device of the collector electrode of said insulated gate device and said minute compression functions; Emitter is through the second end coupling of DC power supply with the device that divides compression functions, and the amplitude of said direct voltage source is higher than the ceiling voltage of insulated gate device as the amplifier needs.
The beneficial effect of the present invention and prior art contrast is:
The present invention proposes a kind of insulated gate device control method and circuit thereof; Make insulated gate device be operated in " active area " at special time; Pass through close-loop feedback control; Make voltage, the current value of its operating state different, and then the amplification of specific factor is carried out in arbitrary input with traditional insulated gate device switching mode.The present invention has promptly expanded the application scenario of insulated gate device, makes insulated gate device can be used as the amplifier use of the high pressure of specific multiplication factor, big electric current.
Description of drawings
Fig. 1 is first kind of control idea schematic flow sheet of the present invention;
Fig. 2 is second kind of control idea schematic flow sheet of the present invention;
Fig. 3 is the third control idea schematic flow sheet of the present invention;
Fig. 4 is the specific embodiment of the invention one a control circuit structure chart;
Fig. 5 is the application circuit structure chart of circuit shown in Figure 4;
Fig. 6 is the input and output voltage waveform sketch map of circuit shown in Figure 5;
Fig. 7 is the specific embodiment of the invention two control circuit structure charts;
Fig. 8 is the specific embodiment of the invention three control circuit structure charts;
Fig. 9 is the specific embodiment of the invention four control circuit structure charts;
Figure 10 is the specific embodiment of the invention five control circuit structure charts;
Embodiment
Below in conjunction with concrete execution mode and contrast accompanying drawing the present invention is explained further details.
As shown in Figure 1, be a kind of control idea schematic flow sheet of the present invention.Insulated gate device is IGBT in this embodiment.Reach the purpose that control IGBT uses as the high pressure of specific factor k times (k is the natural number greater than 1), big current amplifier; At first; The collector emitter voltage Vce of IGBT is drawn the back obtain feedback voltage V k, so feedback voltage is satisfied with the collector emitter voltage relation through k times of attenuation processing:
With the voltage of waiting to amplify random waveform---reference voltage Vi and feedback voltage V k obtain both differences through comparison process; Be defined as the first difference voltage Vs1; It is made processing and amplifying, be amplified to the amplifying voltage Vd that makes after the output and opening between state gate voltage values and the off status gate voltage values; This amplifying voltage Vd is input to the grid G of insulated gate device, makes the collector electrode of IGBT constitute closed loop to grid, then the collector emitter voltage Vce of IGBT is k reference voltage doubly, thereby has realized the purpose that the k to reference voltage Vi doubly amplifies.
As shown in Figure 2, be second kind of control idea schematic flow sheet of the present invention.Be with first kind of control idea schematic flow sheet difference: introduced a feedback voltage V k1 more, made system more stable.When this feedback voltage is grid voltage Vge; The first difference voltage Vs1 and grid voltage Vge that reference voltage Vi and feedback voltage V k comparison process obtain proceed comparison; Export both differences, obtain second difference voltage, this second difference voltage is input to next stage does processing and amplifying.When this feedback voltage is collector emitter voltage rate of change voltage dVce/dt; First difference voltage Vs1 that reference voltage Vi and feedback voltage V k comparison process obtain and collector emitter voltage rate of change voltage dVce/dt stack; Obtain first superimposed voltage, this first superimposed voltage is input to next stage does processing and amplifying.Stack here can improve the stability of a system.When Vce increased or reduces, voltage change ratio produced circuit, promptly can flow through an electric current on the electric capacity in the differential circuit, and the size of electric current equals amassing of electric capacity and dVce/dt in the differential circuit.The direction that electric current flows through electric capacity is: when Vce increased, electric current was to flow to from collector electrode; If Vce reduces, then electric current is to flow out to collector electrode.When the Vce rate of change was big, this current value was also corresponding bigger.This electric current gets in the closed feedback loop after flowing through the resistance in the differential circuit; Meeting produces a pressure drop on the latter linked resistance of the first difference voltage Vs1 of former closed feedback loop; Be input to the IGBT grid after this pressure drop and the first difference voltage Vs1 are superimposed, form negative feedback thus.Its principle is, when Vce increases when too fast, also be dVce/df be one bigger on the occasion of, be added in the corresponding increase of voltage of IGBT grid after the stack, then the speed that increases of Vce can slow down; When Vce reduces when too fast, also be that dVce/df is a bigger negative value, be added in corresponding the reducing of voltage of IGBT grid after the stack, then the speed that reduces of Vce can slow down.Therefore the feedback of introducing collector emitter voltage rate of change voltage makes that dVce/df can be not excessive, improves the stability of a system.
IGBT is operated in active area, mainly is to lean on the Vce feedback, and Vge feeds back with dVce/df and plays booster action, makes that Vce can better follow reference voltage in the control procedure.
As shown in Figure 3, be the third control idea schematic flow sheet of the present invention.With second in control idea schematic flow sheet difference be: introduce grid voltage Vge and collector emitter voltage rate of change voltage dVce/dt simultaneously, further increase the stability of a system.When introducing grid voltage Vge and collector emitter voltage rate of change voltage dVce/dt simultaneously; The first difference voltage Vs1 that reference voltage Vi and feedback voltage V k comparison process obtain compares with grid voltage Vge earlier; Obtain the second difference voltage Vs2; The second difference voltage Vs2 superposes with collector emitter voltage rate of change voltage dVce/dt again, obtains the second superimposed voltage Vx2, this second superimposed voltage Vx2 is input to next stage does processing and amplifying.
More than 3 kinds of control idea be equally applicable to MOSFET.
Embodiment one
As shown in Figure 4, be this embodiment control circuit structure chart.Said insulated gate device is IGBT, in this embodiment, the voltage that is applied to the IGBT grid-15V and+15V between.Control circuit comprises bleeder circuit, subtractor circuit U1 and buffering amplifying circuit U2.Wherein, bleeder circuit comprises first resistance R 1 and second resistance R 2.Subtractor circuit U1 comprises resistance R _ f 1, Rf2, Rf3, Rf4 and operational amplifier a1.Wherein, resistance satisfies
The output voltage of subtractor circuit
Wherein
After the substitution resistance relation, following formula can be reduced to:
Vs1 is input to buffer amplifier circuit U2, and buffer amplifier circuit is handled the back output voltage
Electric current to input IGBT amplifies simultaneously.This output voltage V d and output current are input to grid control IGBT work.When the value of the expression formula of above-mentioned Vd＞15, grid voltage is got 15V, and IGBT is operated in opening state; When the value of the expression formula of above-mentioned Vd＜-15, grid voltage is got-15V, and IGBT is operated in off state; When the value of above-mentioned Vd expression formula be positioned at ± 15V between the time, grid voltage is got the value of expression formula.At this moment; As
during greater than Vi; Grid voltage is a positive voltage; IGBT just moves to opening state; Vce is reduced, then
also reduce to Vi near, until reaching Vi; As
during less than Vi; Grid voltage is a negative voltage; IGBT is just to turn-offing operation; Vce is raise; Then
also raise to Vi near, until reaching Vi.Therefore,
can follow Vi all the time and reach stable state until equaling Vi.When final control IGBT works in the stable state of " active area ";
equals Vi; Vce is
thereby has realized that promptly IGBT is controlled as amplifying device work to the amplification of input voltage Vi specific factor
.When IGBT was stable at magnifying state, the grid voltage of IGBT was a value between threshold voltage of the grid and the postivie grid puncture voltage.
As shown in Figure 5, be the application circuit structure chart of control circuit shown in Figure 4.Comprise divider resistance R in the application circuit.Wherein divider resistance R also can be replaced by slide rheostat.DC power supply DC output voltage supplies control circuit to come work after divider resistance R dividing potential drop.Load is parallelly connected with the collector and emitter two ends of IGBT, also is Vo=Vce.Its operation principle is: circuit is connected moment, and for input voltage Vi, control circuit output voltage V o also is not equal to k*Vi, and this moment, output voltage V o was unsettled.When circuit debugging moment Vo was not k*Vi, the collector emitter voltage Vce of IGBT was through close-loop feedback, and the grid G of output voltage control IGBT finally makes Vo reach k*Vi, gets into stable state.At this moment, the operating current Ic of IGBT confirms by circuit and load, and the electric current that flows through load comes from DC power supply DC, can reach the comparatively high amts level.Therefore, the IGBT of this moment promptly can be applied to the occasion of high voltage, big electric current.
As shown in Figure 6, be the waveform sketch map of input voltage Vi and output voltage V ce, wherein
Adopt this embodiment control circuit, can realize the amplification of input voltage through the IGBT that is operated in active area.Simultaneously the IGBT device has bigger voltage, current class, and single tube is withstand voltage can to reach 6.5kV, and electric current reaches 5kA, so it is during as amplifier, and power is also just very big, can be applied to the occasion of high voltage, high electric current.Under the more high-tension situation of needs, can further improve electric pressure through many IGBT series connection.
Embodiment two
As shown in Figure 7, be the control circuit structure chart of this embodiment.Its difference with embodiment one is: the parallelly connected electric capacity in each resistance two ends in the bleeder circuit.Control circuit in the present embodiment owing to include electric capacity in the bleeder circuit, makes the bleeder circuit response speed increase, and then improves precision.
In this embodiment, control circuit comprises bleeder circuit, subtractor circuit U1 and buffering amplifying circuit U2.Wherein, first resistance R 1, second resistance R 2, first capacitor C 1 and second capacitor C 2 are formed bleeder circuits.Input voltage Vi, output voltage
Embodiment three
As shown in Figure 8, be the control circuit structure chart of this embodiment.The difference of itself and embodiment two is: introduced a feedback signal grid voltage Vge, optimized circuit control.
When the feedback voltage of introducing was grid voltage Vge, wherein, control circuit comprised that bleeder circuit, subtractor circuit Uc1, grid feedback ratio are than circuit U c2 and buffering amplifying circuit U2.Wherein, first resistance R 1, second resistance R 2, first capacitor C 1 and second capacitor C 2 are formed bleeder circuits.The grid feedback ratio receives the grid voltage Vge of IGBT and the difference voltage of subtractor circuit Uc1 output than circuit U c2, relatively exports the difference of two input terminal voltages, this difference is input among the buffer amplifier circuit U2 does processing and amplifying.Be that input voltage is Vi, output voltage
Thereby realize amplification to input voltage Vi.
Embodiment four
As shown in Figure 9, be the control circuit structure chart of this embodiment.The difference of itself and embodiment two is: introduced a feedback voltage collector emitter voltage rate of change voltage dVce/dt, optimized circuit control.
When the feedback voltage of introducing was collector emitter voltage rate of change voltage dVce/dt, wherein, control circuit comprised bleeder circuit, subtractor circuit Uc1, resistance R and buffering amplifying circuit U2.Wherein, the feedback voltage of bleeder circuit output and reference voltage are input to subtractor circuit and obtain both difference voltage, are input to after difference voltage and the collector emitter voltage rate of change voltage dVce/dt stack again and carry out processing and amplifying in the buffer amplifier circuit.Buffer amplifier circuit output is connected to the IGBT grid through closed feedback loop resistance.The collector emitter voltage rate of change voltage dVce/dt that here superposes can improve the stability of a system.In the dynamic process, when Vce increased or reduces, voltage change ratio produced circuit, promptly can flow through a current i on the electric capacity in the differential circuit, and the size of i equals amassing of electric capacity and dVce/dt in the differential circuit.The direction that electric current flows through electric capacity is: when Vce increased, electric current was to flow to from collector electrode; If Vce reduces, then electric current is to flow out to collector electrode.When the Vce rate of change was big, this current value was also corresponding bigger.This electric current gets in the closed feedback loop after flowing through the resistance in the differential circuit, can in closed feedback loop, produce a pressure drop on the resistance R, is input to the IGBT grid after this pressure drop and the first difference voltage Vs1 are superimposed, forms negative feedback thus.Its principle is, when Vce increases when too fast, also be dVce/df be one bigger on the occasion of, be added in the corresponding increase of voltage of IGBT grid after the stack, then the speed that increases of Vce can slow down; When Vce reduces when too fast, also be that dVce/df is a bigger negative value, be added in corresponding the reducing of voltage of IGBT grid after the stack, then the speed that reduces of Vce can slow down.Therefore the feedback of introducing collector emitter voltage rate of change voltage makes that dVce/df can be not excessive, improves the stability of a system.
IGBT is operated in active area, mainly is to lean on the Vce feedback, and Vge feeds back with dVce/df and plays booster action, makes that Vce can better follow reference voltage in the control procedure.
Embodiment five
Shown in figure 10, be the control circuit structure chart of this embodiment.The difference of itself and embodiment three is: introduced grid feedback Vge and collector emitter voltage rate of change voltage dVce/dt simultaneously, further optimized circuit control.
Wherein, control circuit comprises that bleeder circuit, subtractor circuit Uc1, grid feedback ratio are than circuit U c2 and buffering amplifying circuit U2.Wherein, first resistance R 1, second resistance R 2, first capacitor C 1 and second capacitor C 2 are formed bleeder circuits.The grid feedback ratio receives the grid voltage Vge of IGBT and the difference voltage of subtractor circuit Uc1 output than circuit U c2; Relatively export the difference of two input terminal voltages; With this difference and collector emitter voltage rate of change voltage dVce/dt stack; Voltage after obtaining superposeing is done processing and amplifying among the back voltage input buffering amplifying circuit U2 that will superpose.Input voltage is Vi, then output voltage
More than insulated gate device in five embodiments also can be MOSFET.
Above content is to combine concrete preferred implementation to the further explain that the present invention did, and can not assert that practical implementation of the present invention is confined to these explanations.For the those of ordinary skill of technical field under the present invention, make some being equal under the prerequisite of the present invention design and substitute or obvious modification not breaking away from, and performance or purposes are identical, all should be regarded as belonging to protection scope of the present invention.
Claims (11)
1. insulated gate device control method, it is characterized in that: being used to control the semiconductor device with insulated gate structure is the amplifying device of k as multiplication factor, and wherein, k is the natural number greater than 1, may further comprise the steps:
A) attenuation step: the collector emitter voltage (Vce) of insulated gate device is obtained feedback voltage (Vk) after decaying, feedback voltage and collector emitter voltage relation satisfy:
B) introduce the reference voltage step: introducing needs the reference voltage of amplification; Said reference voltage range is Vmin/k＜Vi＜Vmax/k, and wherein Vmin is the minimum value of insulated gate device active area collector emitter voltage, and Vmax is the maximum of insulated gate device active area collector emitter voltage;
C) comparison step: comparison reference voltage (Vi) and feedback voltage (Vk), export both difference, obtain first difference voltage (Vs1);
D) the output result does processing and amplifying amplification procedure: with step C), obtains amplifying voltage (Vd), and processing and amplifying makes the magnitude of voltage of amplifying voltage (Vd) between negative-grid puncture voltage and postivie grid puncture voltage;
E) closed loop input step: amplifying voltage (Vd) is input between the grid (G) and emitter (E) of insulated gate device; Make the collector electrode of insulated gate device constitute closed loop to grid; Final control insulated gate device works in the stable state of " active area ", and the collector emitter voltage of insulated gate device (Vce) is the reference voltage that amplifies after k times.
2. insulated gate device control method according to claim 1; It is characterized in that: the decay said steps A) realizes through attenuator circuit; Said attenuator circuit comprises that at least one falls L shaped bleeder circuit by what two resistance were formed, and the resistance proportionate relationship of said two resistance satisfies that to make said bleeder circuit output voltage values be
condition doubly of bleeder circuit input voltage value.
3. insulated gate device control method according to claim 1 is characterized in that: also comprise step B1 said step B)) introducing grid voltage (Vge); Said step C) is comparison reference voltage (Vi) and feedback voltage (Vk); Export both differences, obtain first difference voltage (Vs1), first difference voltage (Vs1) and grid voltage (Vge) are compared; Export both differences, obtain second difference voltage (Vs2).
4. insulated gate device control method according to claim 1 is characterized in that: also comprise step B1 said step B)) introducing collector emitter voltage rate of change (dVce/dt); Said step C) is comparison reference voltage (Vi) and feedback voltage (Vk); Export both differences; Obtain first difference voltage (Vs1), first difference voltage (Vs1) and collector emitter voltage rate of change (dVce/dt) are superposeed, obtain first superimposed voltage.
5. insulated gate device control method according to claim 4 is characterized in that: also comprise step B2 said step B)) introducing collector emitter voltage rate of change (dVce/dt); Said step C) is comparison reference voltage (Vi) and feedback voltage (Vk); Export both differences, obtain first difference voltage (Vs1), first difference voltage (Vs1) and grid voltage (Vge) are compared; Export both differences; Obtain second difference voltage (Vs2), said second difference voltage (Vs2) and collector emitter voltage rate of change (dVce/dt) are superposeed, obtain second superimposed voltage (Vx2).
6. insulated gate device control circuit; It is characterized in that: being used to control the semiconductor device with insulated gate structure is the amplifying device of k as multiplication factor; Wherein, k is the natural number greater than 1, comprises the attenuator circuit and first subtractor circuit; Said attenuator circuit receives the collector emitter voltage (Vce) of insulated gate device; Its decay k is outputed to the normal phase input end of first subtractor circuit after doubly, and the reference voltage that needs to amplify is input to the inverting input of first subtractor circuit, and first subtractor circuit is done subtraction and processing and amplifying simultaneously to two input terminal voltages; Obtain first difference voltage (Vs1); It satisfies the condition between negative-grid puncture voltage and postivie grid puncture voltage, and said first difference voltage (Vs1) is input between the grid (G) and emitter (E) of insulated gate device, makes the collector electrode of insulated gate device constitute closed loop to grid; Final control insulated gate device works in the stable state of " active area ", and the collector emitter voltage of insulated gate device (Vce) is the reference voltage that amplifies after k times; Said reference voltage representes that with Vi scope is Vmin/k＜Vi＜Vmax/k, and wherein Vmin is the minimum value of insulated gate device active area collector emitter voltage, and Vmax is the maximum of insulated gate device active area collector emitter voltage.
7. control circuit according to claim 6; It is characterized in that: said attenuator circuit comprises that at least one falls L shaped bleeder circuit by what two resistance were formed; The resistance proportionate relationship of said two resistance satisfies that to make said bleeder circuit output voltage values be
condition doubly of bleeder circuit input voltage value, the said also shunt capacitance of each resistance two ends that falls in the L shaped bleeder circuit.
8. according to claim 6 or 7 described control circuits; It is characterized in that: also comprise grid feedback comparison circuit; Said grid feedback comparison circuit first termination is received the grid voltage (Vge) of insulated gate device, and second termination is received first difference voltage of said first subtractor circuit, relatively exports the difference of two input terminal voltages; Obtain second difference voltage, be input to the next stage processing of circuit.
9. according to claim 6 or 7 described control circuits; It is characterized in that: comprise that also voltage change ratio produces circuit; It is differential circuit that said voltage change ratio produces circuit; The collector emitter voltage rate of change (dVce/dt) of its output and the stack of first difference voltage of said first subtractor circuit obtain first superimposed voltage, are input to the next stage processing of circuit.
10. control circuit according to claim 8; It is characterized in that: comprise that also voltage change ratio produces circuit; It is differential circuit that said voltage change ratio produces circuit; The collector emitter voltage rate of change (dVce/dt) of its output superposes with second difference voltage of said grid feedback comparison circuit output, obtains second superimposed voltage, is input to the next stage processing of circuit.
11. according to claim 6 or 7 described control circuits; It is characterized in that: the device that also comprises the branch compression functions; The device of said minute compression functions is resistance or slide rheostat; First end coupling of the device of the collector electrode of said insulated gate device and said minute compression functions, emitter is through the second end coupling of DC power supply with the device that divides compression functions, and the amplitude of said direct voltage source is higher than the ceiling voltage of insulated gate device as the amplifier needs.
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|---|---|---|---|---|
| CN102098033B (en) * | 2010-11-26 | 2012-09-26 | 深圳青铜剑电力电子科技有限公司 | Method for controlling turn-on transient process of insulated gate device |
| CN102075076B (en) * | 2010-11-26 | 2012-12-19 | 深圳青铜剑电力电子科技有限公司 | Method for controlling turn-off transient process of insulated gate device |
| CN106357252A (en) * | 2016-09-05 | 2017-01-25 | 安徽中研电气有限责任公司 | Fully digitalized IGBT (insulated gate bipolar transistor) driving controller |
| CN110058089A (en) * | 2019-05-22 | 2019-07-26 | 南华大学 | A kind of probe measuring transient electromagnetic field |
-
2009
- 2009-12-04 CN CN2009102586153A patent/CN101741362B/en active Active
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| CN101741362A (en) | 2010-06-16 |
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