CN102098033B - Method for controlling turn-on transient process of insulated gate device - Google Patents
Method for controlling turn-on transient process of insulated gate device Download PDFInfo
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Abstract
The invention discloses a method for controlling a turn-on transient process of an insulated gate device. A drive circuit which is used for receiving a reference signal and driving the reference signal with the collector-emitter voltage or drain-source voltage being k times during the turn-on transience and the turn-off transience of the insulated gate device is provided in the method; and the process of controlling the reference signal change comprises two stages: in the first stage: controlling the reference signal to drop to a set value from an upper limit value, then keeping the set value within a time slot, or controlling the reference signal to linearly drop to the set value from the upper limit value in a slope, or controlling the reference signal to directly drop a transitional value from the upper limit value and then dropping to the set value from the transitional value in a slope; and in the second stage: controlling the reference signal to drop to a lower limit value of the reference signal from the set value in at least one slope. Through the control method disclosed by the invention, the effective control can be carried out on the turn-on transient process of the insulated gate device.
Description
Technical field
The present invention relates to control the method for insulated gate device, particularly relate to a kind of method that insulated gate device is opened transient process of controlling.
Background technology
Insulated gate device; Like igbt (Insulated Gate Bipolar Transistor; Initialism is IGBT) and metal oxide semiconductor field effect tube (Metal Oxide Semiconductor Field Effect Transistor; Initialism is MOSFET); Have a series of good characteristics such as voltage-type driving, high input impedance, switching speed are fast, the switch power loss is little, on-state voltage drop is little, become the ideal power switching device that Switching Power Supply, frequency converter, inverter, chopper, induction heating equipment, active filter, reactive-load compensator, household electrical appliance etc. need the transformation of electrical energy occasion.
With IGBT is example, normally after receiving external control signal, directly apply fixing high voltage (as+15V) or low-voltage (like-15V perhaps-8V) in the grid of IGBT, with the basic function that realizes that IGBT opens or turn-offs as switching tube.In the prior art, the drive circuit that proposes the IGBT device is arranged also, may command IGBT device steady operation is the amplifying device use of k in active area as multiplication factor.Concrete drive circuit can be referring to number of patent application before the applicant: CN200910258615.3, name be called "
A kind of insulated gate device control method and circuit thereof " in the structure of disclosed insulated gate device control circuit.But in the above-mentioned technology, all can only to IGBT open the back or close have no progeny and the active area steady operation under control, can't opening transient state and turn-offing transient state and control effectively to IGBT.This be because; Parameters such as IGBT device collector emitter voltage Vce and collector emitter voltage rate of change dVce/dt are usually by parameter determining such as characteristic, circuit load and the stray inductance of IGBT device itself, electric capacity; Open transient state or turn-off transient state when its operating state is in; Then above-mentioned parameter can't be effectively controlled, and especially in opening transient state, collector emitter voltage Vce is changed to low state from higher state; Thereby the insulated gate device electric current changes and comparatively fast causes device itself or connected components from being damaged, and then causes the fault of complete equipment., be the problem of guaranteeing that the insulated gate device fail safe need solve when using how to the opening transient state and turn-off transient state and control effectively of insulated gate device.
Summary of the invention
Technical problem to be solved by this invention is: remedy the deficiency of above-mentioned prior art, propose a kind of method that insulated gate device is opened transient process of controlling, can control effectively the transient process of opening of insulated gate device.
Technical problem of the present invention solves through following technical scheme:
A kind ofly control the method that insulated gate device is opened; Comprise drive circuit; Said drive circuit receives reference signal; Collector emitter voltage or drain electrode-source voltage when driving said insulated gate device and opening transient state and turn-off transient state are k said reference signal doubly; Controlling the process that said reference signal changes is: the phase I: control said reference signal and directly drop to set point from the reference signal higher limit and keep said set point then in a period of time; Or control said reference signal and in the said time period, drop to said set point with a slope straight line, or control said reference signal and directly drop to transition value from the reference signal higher limit and in the said time period, drop to said set point with a slope straight line then from said transition value from said reference signal higher limit; The 1/k that said reference signal higher limit is a clamping voltage doubly; The value of said set point satisfies: when said reference signal was got said set point, corresponding said insulated gate device worked in active area under the collector emitter voltage of said insulated gate device or the value of drain electrode-source voltage; The length of said time period is longer than the time of delay of said insulated gate device at least; Said transition value is less than the value of said reference signal higher limit greater than said set point; Second stage: control said reference signal and drop to the reference signal lower limit with at least one slope from said set point; The 1/k value doubly of said reference signal lower limit collector emitter voltage or drain electrode-source voltage when opening stable state smaller or equal to said insulated gate device.
In the optimized technical scheme,
The value of said transition value satisfies: when said reference signal was got said transition value, corresponding said insulated gate device worked in active area under the collector emitter voltage of said insulated gate device or the value of drain electrode-source voltage.
The 1/k of the collector emitter voltage that the value of said set point is lower than said insulated gate device when turn-offing stable state or the value of drain electrode-source voltage doubly.
Be collector electrode-emitter or the drain electrode-source voltage of the said insulated gate device time with respect to said reference signal response lag said time of delay.
Said insulated gate device is a plurality of insulated gate devices that are connected in series; Said each insulated gate device is by a said driving circuit drives; The reference signal that said each drive circuit receives is all identical; The length of said time period is longer than the time of delay of the longest insulated gate device time of delay at least; The value of said set point satisfies: when said reference signal was got said set point, corresponding said each insulated gate device all worked in active area under the collector emitter voltage of said each insulated gate device or the value of drain electrode-source voltage
Control said reference signal and drop to said reference signal lower limit with first slope from said set point.
Said first slope requires to set to the service time requirement and the turn-on consumption of said insulated gate device according to the user.
Control said reference signal and from said set point descends a period of time with the transition slope straight line after, drop to said reference signal lower limit with the first slope straight line, the absolute value of said transition slope is less than the absolute value of said first slope.
Said transition slope and said first slope require to set to the service time requirement and the turn-on consumption of said insulated gate device according to the user.
Said drive circuit comprises comparison amplifying circuit and feedback circuit, and the said relatively reference voltage input terminal of amplifying circuit receives said reference signal; The input of said feedback circuit links to each other with the collector electrode of said insulated gate device or drain electrode, and output links to each other with the said relatively comparison signal input of amplifying circuit; The said relatively output of amplifying circuit links to each other with the grid of said insulated gate device.
The beneficial effect of the present invention and prior art contrast is:
The method that control insulated gate device of the present invention is opened; The control insulated gate device is when opening, and the control reference signal is stand-by period section of experience earlier, when collector emitter voltage or the drain electrode-source voltage of treating insulated gate device can be followed reference signal in above-mentioned stand-by period section; Get into second stage again; Guiding is followed the stage, and collector emitter voltage or drain electrode-source voltage follower reference signal is changed synchronously, the value when opening accordingly with the slope arrival that configures; Can the transient state of opening of insulated gate device be control effectively; Reduce to open the loss of transient state, control IGBT electric current situation about changing simultaneously indirectly, the damage that device itself or other device of being connected with device cause because of too fast electric current variation in the time of can preventing to open.
Description of drawings
Fig. 1 be control method of the present invention based on the circuit diagram of drive circuit;
Fig. 2 is the reference signal of the specific embodiment of the invention one and the oscillogram of the collector emitter voltage Vce of the IGBT that follows;
Fig. 3 is the oscillogram of the collector emitter voltage Vce of reference signal and the IGBT that follows in the specific embodiment of the invention two;
Fig. 4 is the oscillogram of the collector emitter voltage Vce of reference signal and the IGBT that follows in the specific embodiment of the invention three;
Fig. 5 is the oscillogram of the collector emitter voltage Vce of reference signal and the IGBT that follows in the specific embodiment of the invention four;
Fig. 6 is the oscillogram of reference signal in the specific embodiment of the invention five;
Fig. 7 is the oscillogram of reference signal in the specific embodiment of the invention six.
Embodiment
Below in conjunction with embodiment and contrast accompanying drawing the present invention is explained further details.
The method that control insulated gate device of the present invention is opened; The patent No. based on before the applicant is ZL200920261174.8, and name is called the drive circuit of the insulated gate device of bulletin in " a kind of drive circuits of single or a plurality of insulated gate devices that are connected in series ".Drive circuit in this patent document, as shown in Figure 1, comprise Vce feedback circuit, comparison amplifying circuit, buffer amplifier circuit and resistance Rg, relatively the reference voltage input terminal of amplifying circuit receives reference signal Vref.The input of feedback circuit links to each other with the collector electrode of insulated gate device, and output links to each other with the comparison signal input that compares amplifying circuit, the feedback voltage Vfb of output and IGBT collector emitter voltage Vce proportion relation.Relatively the output of amplifying circuit links to each other with the grid of insulated gate device (being IGBT shown in the figure) with resistance Rg through buffer amplifier circuit.This drive circuit receives reference signal Vref, through feedback in the drive circuit and relatively amplification control, makes the collector emitter voltage Vce of IGBT follow reference signal, is the reference signal Vref that amplifies certain multiple.If amplification multiple is k times.Drive circuit is opened or when opening to the transient state of shutoff from turn-offing to driving insulated gate device; Can control make the collector emitter voltage Vce of IGBT follow reference signal, but be not that all reference signals are input to drive circuit and can both make the collector emitter voltage Vce of IGBT closely follow reference signal and play good effect.Control insulated gate device of the present invention is opened in the method for transient process; It promptly is the scheme that proposes several kinds of appropriate control reference signals; Thereby it is better to make insulated gate device collector electrode-emitter or drain electrode-source voltage when opening transient state follow the effect of reference signal; The effectively rate of change of control sets electrode-emitter or drain electrode-source voltage, collector electrode-emitter or drain electrode-source voltage and the total time length of opening transient process; And the loss that reduces to open transient state as far as possible, can control the situation that the IGBT electric current changes simultaneously indirectly, thereby prevent that insulated gate device from damaging.Under the situation of insulated gate device series connection, can also realize all pressures of opening of device.
Following execution mode is the example explanation with IGBT, equally also is applicable to the control of opening of MOSFET.When control IGBT opened transient process in the following execution mode, the scheme of the control reference signal of proposition all is to carry out in two stages of branch: the phase I: the collector emitter voltage of waiting for IGBT can be followed reference signal synchronously; Second stage: the control reference signal drops to the reference signal lower limit, and then the collector emitter voltage of IGBT drops to the value when opening synchronously, thereby opening of IGBT control effectively.Phase I comprises three kinds of control modes: first kind of control mode: the control reference signal directly drops to set point from the reference signal higher limit and keeps set point then in a period of time; Second kind of control mode: the control reference signal directly drops to set point from the reference signal higher limit with a slope straight line in the time period; The third control mode: the control reference signal directly drops to transition value from the reference signal higher limit and in the time period, drops to set point from transition value with a slope straight line then.Second stage comprises two kinds of control modes: first kind of control mode: the control reference signal drops to the reference signal lower limit from set point with the first slope straight line; Second kind of control mode: the control reference signal drops to the reference signal lower limit with the first slope straight line with transition slope after decline a period of time earlier again from set point, and the absolute value of transition slope is less than the absolute value of first slope.
Embodiment one
Control mode in this embodiment is made up of first kind of control mode of above-mentioned phase I and first kind of control mode of second stage.As shown in Figure 2, solid line part s1 is the oscillogram of reference signal in this embodiment.T0 constantly before, IGBT is in off state, the value of reference signal is reference signal higher limit Vmax, for the 1/k of clamping voltage doubly.The setting of clamping voltage is in order to prevent that collector emitter voltage Vce is too high and the fault that causes.Under the situation that does not adopt voltage clamp, IGBT might cause that collector emitter voltage Vce is too high owing to stray parameter or the system failure turn-offing transient state, causes the damage of IGBT.Through clamping voltage is set, the clamping voltage that collector emitter voltage Vce can be set up limits, and can not surpass the clamping voltage value that is provided with.Therefore the common value of setting of clamping voltage is turn-offed the collector emitter voltage Vce under the stable state greater than IGBT, less than the withstand voltage of IGBT device self.At t0 constantly; Begin IGBT is carried out the control of opening from turn-offing to; The process that the control reference signal changes is: the phase I: the control reference signal constantly directly drops to set point V0 from reference signal higher limit Vmax at t0, keeps set point V0 constant in the time period at t0 to t1 then; Second stage: t1 back control constantly reference signal descends with the first slope straight line from set point V0, to t2 constantly the time, and reference signal arrival reference signal lower limit Vmin.
The value of above-mentioned set point V0 satisfies: when reference signal was got set point V0, corresponding IGBT worked in active area under the value of the collector emitter voltage Vce of IGBT.And when a plurality of IGBT connected, when reference signal was got set point, corresponding each insulated gate device all should work in active area under the collector emitter voltage of each insulated gate device or the value of drain electrode-source voltage.
The value of reference signal lower limit Vmin is the 1/k value doubly smaller or equal to IGBT collector emitter voltage Vce, is included as the situation of negative value.
The value of first slope; Can require with turn-on consumption requirement set to service time of IGBT according to the user: if customer requirements service time is short as far as possible; Turn-on consumption is low as far as possible, and absolute value that then can first slope is set to a bigger value in the scope that IGBT device itself allows; If the rate of change of collector emitter voltage Vce was more slow as far as possible when customer requirements IGBT opened, absolute value that then can first slope is set to a less value.
In the control method, t0 to the time of delay that t1 time span constantly is longer than IGBT at least, is generally μ s level constantly.When IGBT of a driving circuit drives control only is set, be the time of the collector emitter voltage Vce of this IGBT above-mentioned time of delay with respect to the reference signal response lag; When a plurality of drive circuits being set respectively during a plurality of IGBT series connection of drive controlling, be the longest corresponding lag time of IGBT of response lag time among a plurality of IGBT above-mentioned time of delay.The setting of the t0 moment to the t1 time period constantly is collector emitter voltage Vce and the reference signal sync response that is used for waiting for IGBT; Thereby when guaranteeing that t1 moment back reference signal descends with first slope; The collector emitter voltage Vce of IGBT can follow reference signal synchronously, thereby effectively controls the variation of the collector emitter voltage Vce of IGBT.
Among Fig. 2, the collector emitter voltage Vce that also shows IGBT follows the oscillogram that reference signal changes, shown in dotted line u1 among the figure.After the moment, control IGBT device is open-minded at t0, and reference signal keeps a constant value, waits for the sync response of the collector emitter voltage Vce of IGBT; T1 is during the moment, and both can reach synchronous variation; Reference signal descends with the first slope straight line afterwards, and collector emitter voltage Vce also follows decline, until the magnitude of voltage that reaches when opening, thus open-minded.After the moment, IGBT is by open-minded at t2, and the collector emitter voltage Vce of IGBT is higher than reference signal under the stable state.This is because opening under the stable situation; The size of the collector emitter voltage Vce of IGBT is determined with the electric current that flows through IGBT by the I-V characteristic of IGBT itself jointly; After so stable state is opened in entering; Reference signal is got the reference signal lower limit, and the 1/k of collector emitter voltage Vce doubly when opening smaller or equal to IGBT.After getting into stable state, the value of reference signal makes that the Vce voltage of IGBT is low as much as possible like this, on the one hand can be so that IGBT is stabilized in opening state, thus improve the reliability of IGBT work, on the other hand can be so that the on-state loss of IGBT is less.IGBT gets into and opens stable state afterwards.
In the control method of this embodiment; When opening, be accompanied by the variation of reference signal, the collector emitter voltage Vce of IGBT carries out " preparation " of following in the t0-t1 time period earlier; Following reference signal then descends with the first slope straight line; When reference signal arrived lower limit, this moment, the collector emitter voltage Vce of IGBT promptly arrived the steady state voltage when opening, promptly by open-minded.Whole opening process; The collector emitter voltage Vce of IGBT is in effectively controlling; Can control parameters such as IGBT collector emitter voltage Vce and collector emitter voltage rate of change dVce/dt according to user's request flexibly, and it is too fast and be compromised to prevent that voltage change ratio current changing rate too fast and corresponding generation from appearring in IGBT when opening.
Embodiment two
Control mode in this embodiment is made up of second kind of control mode of phase I and first kind of control mode of second stage.As shown in Figure 3, solid line part s2 is the oscillogram of reference signal in this embodiment.In this embodiment in reference signal and the embodiment one difference of reference signal be: reference signal is in the phase I of the collector emitter voltage Vce sync response of waiting for IGBT in this embodiment; Directly drop to set point with a slope straight line, and no longer keep set point constant from the reference signal higher limit.
As shown in Figure 3; At t3 constantly; Begin IGBT is carried out the control of opening from turn-offing to, the process that the control reference signal changes is: the phase I: the control reference signal drops to set point V0 from reference signal higher limit Vmax with a slope straight line in t3 to the t4 time period; Second stage: t4 back control constantly reference signal descends with the first slope straight line from set point V0, to t5 constantly the time, and reference signal arrival reference signal lower limit Vmin.
The value principle of set point V0 in this embodiment, the value of reference signal lower limit Vmin and the value principle of first slope all with execution mode one in identical.And the length of time period t 3 to t4 is also identical with the length of time period t 0 to t1 in the execution mode one.
Among Fig. 3, the collector emitter voltage Vce that also shows IGBT follows the oscillogram that reference signal changes, shown in dotted line u2 among the figure.During the moment, control IGBT device is open-minded at t3, and reference signal drops to set point V0 from reference signal higher limit Vmax, and this stage is waited for the sync response of the collector emitter voltage Vce of IGBT; T4 is during the moment, and both can change synchronously; Control reference signal afterwards and descend, collector emitter voltage Vce also follows decline, until the magnitude of voltage that reaches when opening, thus open-minded.
In the control method of this embodiment; At loitering phase; Reference signal drops to set point V0 from reference signal higher limit Vmax and changes, can be not influential to the wait of the sync response of the collector emitter voltage Vce of IGBT, wait to reach set point V0 after; The control reference signal drops to reference signal lower limit Vmin with the first slope straight line, and then whole control process can control effectively to opening of IGBT equally.Because the control method in this embodiment; Reference signal at loitering phase with a slope variation to set point; Rather than directly drop to set point; Therefore the collector emitter voltage Vce rate of change of the IGBT of phase I is less relatively, can reduce the possibility that concussion appears in Vce like this, and then improves the reliability of IGBT work.Especially under the situation of IGBT series connection, the Vce voltage of each IGBT might shake together, and then the Vce voltage of some of them IGBT might surpass the withstand voltage of device, causes the IGBT components from being damaged, and then causes the fault of complete equipment.
Embodiment three
Control mode in this embodiment is made up of the third control mode of phase I and first kind of control mode of second stage.As shown in Figure 4, solid line part s3 is the oscillogram of reference signal in this embodiment.
As shown in Figure 4; At t6 constantly; Begin IGBT is carried out the control of opening from turn-offing to; The process that the control reference signal changes is: the phase I: the control reference signal constantly directly drops to transition value V ' from reference signal higher limit Vmax at t6, drops to set point V0 from transition value V ' with a slope straight line in t6 to the t7 time period then; Second stage: t7 back control constantly reference signal descends with the first slope straight line from set point V0, to t8 constantly the time, and reference signal arrival reference signal lower limit Vmin.
Above-mentioned transition value V ' is less than the value of reference signal higher limit Vmax greater than set point V0.Preferably, the value of transition value V ' also satisfies: when reference signal was got transition value V ', corresponding IGBT worked in active area under the value of the collector emitter voltage Vce of IGBT.Like this, the IGBT that transition value V ' is corresponding with set point V0 all works in active area, and both values are more approaching, and the slope that drops to set point V0 from transition value V ' is more level and smooth, and is better to the control of the collector emitter voltage Vce of IGBT.Simultaneously; Owing to have only the IGBT operating state after getting into active area, could control effectively to IGBT; Therefore drop to an intermediate form in initial stage phase I control reference signal fast from the reference signal higher limit; And then the guiding drop to set point, can shorten the stand-by period of phase I with respect to embodiment two.
The value principle of set point V0 in this embodiment, the value of reference signal lower limit Vmin and the value principle of first slope all with execution mode one in identical.And the length of time period t 6 to t7 is also identical with the length of time period t 0 to t1 in the execution mode one.
Among Fig. 4, the collector emitter voltage Vce that also shows IGBT follows the oscillogram that reference signal changes, shown in dotted line u3 among the figure.During the moment, control IGBT device is open-minded at t6, and reference signal directly drops to transition value V ' from reference signal higher limit Vmax, drops to set point V0 from transition value V ' then, and this stage is waited for the sync response of the collector emitter voltage Vce of IGBT; T7 is during the moment, and both can change synchronously; Control reference signal afterwards and descend, collector emitter voltage Vce also follows decline, until the magnitude of voltage that reaches when opening, thus open-minded.
In the control method of this embodiment; At loitering phase; Reference signal drops to an intermediate form V ' earlier, drops to set point V0 from transition value V ' with a slope straight line then and changes, and has the reliable advantage of the quick and embodiment two of embodiment one concurrently.Wait to reach both can sync response after, the control reference signal drops to the lower limit Vmin of reference signal with the first slope straight line, then whole control process can control effectively to the transient state of opening of IGBT too.
Embodiment four
Control mode in this embodiment is made up of first kind of control mode of phase I and second kind of control mode of second stage.As shown in Figure 5, solid line part s4 is the oscillogram of reference signal in this embodiment.In this embodiment in reference signal and the embodiment one difference of reference signal be: in this embodiment during second stage; Reference signal drops to the reference signal lower limit with the first slope straight line with the transition slope straight line after decline a period of time earlier again, and the absolute value of transition slope is less than the absolute value of first slope.
Among Fig. 5; At t0 constantly; IGBT is opened control, and the process that the control reference signal changes is: the phase I, identical with the phase I of execution mode one; For: the control reference signal constantly directly drops to set point V0 from reference signal higher limit Vmax at t0, keeps set point V0 constant in the time period at t0 to t1 then; Second stage; Promptly the second stage with execution mode one is different; The control of second stage is shown in dotted line s1 among the figure in the execution mode one; Be that reference signal directly drops to reference signal lower limit Vmin from set point V0 with the first slope straight line, and the second stage in this embodiment is in figure shown in the solid line s4, for: t1 back control constantly reference signal from set point V0 earlier with the transition slope straight line descend a period of time to t9 ' constantly; Descend according to first slope then, to t9 constantly the time reference signal drop to reference signal lower limit Vmin.The absolute value of transition slope is less than the absolute value of first slope, and promptly t9 ' descends with slow speed constantly.In the control method; About t9 ' optimal way constantly; If t9 ' corresponding reference signal voltage constantly is V1; When the collector emitter voltage Vce of IGBT drops to k times of reference signal voltage V1, in the system therewith IGBT do the process that diode that the change of current uses has been accomplished shutoff, can reduce the loss that this makees the diode that the change of current uses like this.
The value principle of set point V0 in this embodiment, the length of the value of reference signal lower limit Vmin, the value principle of first slope and time period t 0 to t1 is all identical with execution mode one.
In this embodiment; In the time period that the collector emitter voltage Vce of guiding IGBT descends (t1-t9); Descend with a slower speed (transition slope) earlier; The back with one faster speed (first slope) descend, to be longer than opening in the execution mode one total time (t0-t9) of control and control total time (t0-t2), slower transition slope though cause like this opening; Make that IGBT can be not excessive at the starting stage collector emitter voltage rate of change dVce/dt that opens, play the effect of protection IGBT device.On the other hand, in this IGBT opening process, the diode that IGBT is corresponding therewith in the system is in turn off process, adopts slower transition slope, and corresponding diode losses also can reduce.Among Fig. 5, the collector emitter voltage Vce that also shows IGBT follows the oscillogram that reference signal changes, shown in dotted line u4 among the figure.From figure, can know, the collector emitter voltage Vce of IGBT after there is delay at the control initial stage slightly promptly with the reference signal sync response, afterwards all can fine variation of following reference signal.
Embodiment five
Control mode in this embodiment is made up of second kind of control mode of phase I and second kind of control mode of second stage.As shown in Figure 6, solid line part s5 is the oscillogram of reference signal in this embodiment.In this embodiment in reference signal and the embodiment two difference of reference signal be: in this embodiment during second stage; Reference signal drops to the reference signal lower limit with the first slope straight line with the transition slope straight line after decline a period of time earlier again, and the absolute value of transition slope is less than the absolute value of first slope.
As shown in Figure 6; At t3 constantly; Begin IGBT is carried out the control of opening from turn-offing to; The process that the control reference signal changes is: the phase I, and identical with the phase I of execution mode one, for: the control reference signal drops to set point V0 from reference signal higher limit Vmax with a slope straight line in t3 to the t4 time period; Second stage; Promptly the second stage with execution mode two is different; The control of second stage is shown in dotted line s2 among the figure in the execution mode two; Be that reference signal directly drops to reference signal lower limit Vmin from set point V0 with the first slope straight line, and the second stage in this embodiment is in figure shown in the solid line s5, for: t4 back control constantly reference signal from set point V0 earlier with transition slope descend a period of time to t10 ' constantly; Descend according to first slope then, to t10 constantly the time reference signal arrive reference signal lower limit Vmin.The absolute value of transition slope is less than the absolute value of first slope, and promptly t10 ' descends with slow speed constantly.
The value principle of set point V0 in this embodiment; The length of the value of reference signal lower limit Vmin, the value principle of first slope and time period t 3 to t4 is also identical with execution mode two, and the selection of t10 ' constantly is identical with the selection of t9 ' constantly in the embodiment four.
The control method of this embodiment descends with gradual manner at loitering phase; In section fall time; Descend with slow slope earlier; The back descends with a very fast slope; To be longer than opening control total time (t3-t5) in the execution mode one total time (t3-t10) of control though cause like this opening, can play the effect of protection IGBT device and the loss that reduces the corresponding diode of IGBT device, have the advantage of embodiment two and embodiment four concurrently.Whole control process, the collector emitter voltage Vce of IGBT follows reference signal and changes, and can control opening effectively of IGBT, thereby prevent that IGBT is by the influence infringement of too fast voltage change ratio and too fast current changing rate.
Embodiment six
Control mode in this embodiment is made up of the third control mode of phase I and second kind of control mode of second stage.As shown in Figure 7, solid line part s6 is the oscillogram of reference signal in this embodiment.In this embodiment in reference signal and the embodiment three difference of reference signal be: in this embodiment during second stage; Reference signal drops to the reference signal lower limit with the first slope straight line with the transition slope straight line after decline a period of time earlier again, and the absolute value of transition slope is less than the absolute value of first slope.
As shown in Figure 7; At t6 constantly; Begin IGBT is carried out the control of opening from turn-offing to, the process that the control reference signal changes is: the phase I, identical with the phase I of execution mode one; For: the control reference signal directly drops to transition value V ' from reference signal higher limit Vmax, drops to set point V0 from transition value V ' with a slope straight line in t6 to the t7 time period then; Second stage; Promptly the second stage with execution mode three is different; The control of second stage is shown in dotted line s3 among the figure in the execution mode three; Be that reference signal directly drops to reference signal lower limit Vmin from set point V0 with the first slope straight line, and the second stage in this embodiment is in figure shown in the solid line s6, for: t7 back control constantly reference signal from set point V0 earlier with the transition slope straight line descend a period of time to t11 ' constantly; Descend according to first slope then, to t11 constantly the time reference signal arrive reference signal lower limit Vmin.The absolute value of transition slope is less than the absolute value of first slope, and promptly t11 ' descends with slow speed constantly.
The value principle of set point V0 in this embodiment; The length of the value of reference signal lower limit Vmin, the value principle of first slope and time period t 6 to t7 is also identical with execution mode three, and the selection of t11 ' constantly is identical with the selection of t9 ' constantly in the embodiment four.
The control method of this embodiment drops to a transition value earlier at loitering phase, descends with gradual manner then; In section fall time; Descend with slow slope earlier; The back descends with a very fast slope; To be longer than opening control total time (t6-t8) in the execution mode one total time (t6-t11) of control though cause like this opening, can play the effect of protection IGBT device and the loss that reduces the corresponding diode of IGBT device, have the advantage of embodiment three and embodiment four concurrently.Whole control process, the collector emitter voltage Vce of IGBT follows reference signal and changes, and can control opening effectively of IGBT, thereby prevent that IGBT is by the influence infringement of too fast voltage change ratio and too fast current changing rate.
Above content is to combine concrete preferred implementation to the further explain that the present invention did, and can not assert that practical implementation of the present invention is confined to these explanations.For the those of ordinary skill of technical field under the present invention, make some substituting or obvious modification under the prerequisite of the present invention design not breaking away from, and performance or purposes are identical, all should be regarded as belonging to protection scope of the present invention.
Claims (5)
1. control the method that insulated gate device is opened transient process for one kind; Drive circuit receives reference signal; Collector emitter voltage or drain electrode-source voltage when driving said insulated gate device and opening transient state and turn-off transient state are k said reference signal doubly; Said insulated gate device is independently an insulated gate device or an a plurality of insulated gate device that is connected in series, and when being one independently during insulated gate device, said insulated gate device is by a said driving circuit drives; When for a plurality of insulated gate device that is connected in series, said each insulated gate device is by a said driving circuit drives, and the reference signal that said each drive circuit receives is all identical;
Said drive circuit comprises comparison amplifying circuit and feedback circuit, and the said relatively reference voltage input terminal of amplifying circuit receives said reference signal; The input of said feedback circuit links to each other with the collector electrode of said insulated gate device or drain electrode, and output links to each other with the said relatively comparison signal input of amplifying circuit; The said relatively output of amplifying circuit links to each other with the grid of said insulated gate device;
It is characterized in that: the process of controlling said reference signal variation is:
Phase I: control said reference signal and directly drop to set point from the reference signal higher limit and keep said set point then in a period of time; Or control said reference signal and in the said time period, drop to said set point with a slope straight line, or control said reference signal and directly drop to transition value from the reference signal higher limit and in the said time period, drop to said set point with a slope straight line then from said transition value from said reference signal higher limit; The 1/k that said reference signal higher limit is a clamping voltage doubly; The value of said set point satisfies: when being one independently during insulated gate device; When said reference signal is got said set point; Corresponding said insulated gate device works in active area under the collector emitter voltage of said insulated gate device or the value of drain electrode-source voltage; When for a plurality of insulated gate device that is connected in series; When said reference signal was got said set point, corresponding said each insulated gate device all worked in active area under the collector emitter voltage of said each insulated gate device or the value of drain electrode-source voltage; The value of said time period satisfies: when being one independently during insulated gate device; The length of said time period is longer than the time of delay of said insulated gate device at least; When for a plurality of insulated gate device that is connected in series, the length of said time period is longer than the time of delay of the longest insulated gate device time of delay at least; Said transition value is less than the value of said reference signal higher limit greater than said set point;
Second stage: control said reference signal and drop to the reference signal lower limit with at least one slope from said set point; The 1/k value doubly of said reference signal lower limit collector emitter voltage or drain electrode-source voltage when opening stable state smaller or equal to said insulated gate device.
2. control insulated gate device according to claim 1 is opened the method for transient process; It is characterized in that: the value of said transition value satisfies: when said reference signal was got said transition value, the collector emitter voltage of said insulated gate device or the value of drain electrode-source voltage made said insulated gate device work in active area.
3. control insulated gate device according to claim 1 is opened the method for transient process, it is characterized in that: be collector electrode-emitter or the drain electrode-source voltage of the said insulated gate device time with respect to said reference signal response lag said time of delay.
4. the method that control insulated gate device according to claim 1 is opened is characterized in that: a kind of concrete control mode of said second stage is: control said reference signal and drop to said reference signal lower limit from said set point with the first slope straight line; Said first slope requires to set to the service time requirement and the turn-on consumption of said insulated gate device according to the user.
5. control insulated gate device according to claim 1 is opened the method for transient process; It is characterized in that: the another kind of concrete control mode of said second stage is: control said reference signal and from said set point descends a period of time with the transition slope straight line after, drop to said reference signal lower limit with the first slope straight line, the absolute value of said transition slope is less than the absolute value of said first slope; Said transition slope and said first slope require to set to the service time requirement and the turn-on consumption of said insulated gate device according to the user.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010560028A CN102098033B (en) | 2010-11-26 | 2010-11-26 | Method for controlling turn-on transient process of insulated gate device |
| HK11113533.4A HK1159340A1 (en) | 2010-11-26 | 2011-12-14 | A method of controlling turning-on transient state process of an insulated- gate transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010560028A CN102098033B (en) | 2010-11-26 | 2010-11-26 | Method for controlling turn-on transient process of insulated gate device |
Publications (2)
| Publication Number | Publication Date |
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| CN102098033A CN102098033A (en) | 2011-06-15 |
| CN102098033B true CN102098033B (en) | 2012-09-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010560028A Active CN102098033B (en) | 2010-11-26 | 2010-11-26 | Method for controlling turn-on transient process of insulated gate device |
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| CN (1) | CN102098033B (en) |
| HK (1) | HK1159340A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103166435B (en) * | 2011-12-19 | 2014-12-03 | 中国电力科学研究院 | Voltage self-adaptive control method based on insulated gate bipolar translator (IGBT) series connection loss optimization |
| JP6524020B2 (en) * | 2016-05-19 | 2019-06-05 | 三菱電機株式会社 | Delay time correction circuit, semiconductor device drive circuit and semiconductor device |
| CN112290920B (en) * | 2020-09-23 | 2021-12-28 | 上海儒竞智控技术有限公司 | Driving system and method for dynamically adjusting gate voltage |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030164721A1 (en) * | 2002-03-01 | 2003-09-04 | Reichard Jeffrey A. | Gate drive circuitry |
| US20090085542A1 (en) * | 2007-09-27 | 2009-04-02 | Kabushiki Kaisha Toshiba | Drive system for power semiconductor device |
| CN101741362B (en) * | 2009-12-04 | 2012-01-04 | 深圳青铜剑电力电子科技有限公司 | Insulated gate device control method and circuit thereof |
| CN201533296U (en) * | 2009-12-04 | 2010-07-21 | 深圳青铜剑电力电子科技有限公司 | Drive circuit of a single or multiple series-connected insulated gate members |
-
2010
- 2010-11-26 CN CN201010560028A patent/CN102098033B/en active Active
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Also Published As
| Publication number | Publication date |
|---|---|
| CN102098033A (en) | 2011-06-15 |
| HK1159340A1 (en) | 2012-07-27 |
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