CN105048783A - Narrow-pulse demodulation-based self-energy-storage IGBT drive circuit - Google Patents
Narrow-pulse demodulation-based self-energy-storage IGBT drive circuit Download PDFInfo
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Abstract
The invention relates to a drive circuit, especially to a narrow-pulse demodulation-based self-energy-storage IGBT drive circuit. Output signals of a signal generating circuit are two paths of narrow-pulse signals; and a signal output terminal of the signal generating circuit, a power amplifier circuit, a high-voltage isolating circuit, a pulse widening circuit, and a grid electrode of an IGBT are successively connected. An output terminal of a comparator circuit is connected with an input terminal of an over-current protection circuit; and an output terminal of the over-current protection circuit is connected with an input terminal of the signal generating circuit. According to the technical scheme, compared with the prior art, the invention provides an IGBT drive circuit that uses a high-voltage isolated pulse transformer to transmit a narrow pulse and uses the pulse widening circuit to realize a wide pulse drive signal without a high-voltage isolated auxiliary direct-current power supply. On the basis of the coupling design of the signal generating circuit and the over-current protection circuit, the grid electrode is in a back-voltage biasing mode when the IGBT is turned off normally and is turned off for over-current protection; and the turning off reliability is improved when the collector current is heavy.
Description
Technical field
The present invention relates to a kind of drive circuit, particularly a kind of based on burst pulse demodulation from energy storage IGBT drive circuit.
Background technology
Igbt (IGBT) has voltage driven, and input impedance is high, and saturation voltage is low, and withstand voltage height and the advantage such as electric current is large, can work in higher switching frequency, in field of power electronics extensive use.For ensureing job stability and the output performance of IGBT, IGBT drive circuit of good performance is vital.Drive circuit is connected to the control circuit being in electronegative potential and the IGBT grid being in high potential, and the design of its high-voltage isolating link is one of key factor having influence on whole drive circuit design philosophy; In addition, the reverse bias grid voltage in drive waveforms is the important measures ensureing IGBT reliable turn-off, is even more important under high-voltage great-current working condition.
Existing technical scheme adopts pulse transformer to realize high-voltage isolating usually, pulse transformer can transmit positive voltage pulse and negative voltage pulse, be easy to make its grid be in back-pressure bias state when IGBT turns off, and while transmission pulse signal transmitting energy, and have the advantages that isolation voltage is high, transmission delay is little, extensibility is good, but its transmittability is also subject to the restriction of drive signal impulse width and pulse duty factor.An other technical scheme generally adopts pulse modulation mode to make pulse transformer only transmit narrow pulse signal, adopt pulse demodulation mode to produce broad pulse IGBT drive singal at transformer secondary afterwards, but also need additionally to provide high_voltage isolation auxiliary DC power supply to provide energy for IGBT drives in pulse demodulation link.There is document to propose a kind of narrow pulse signal by pulse transformer transmission and be demodulated into broad pulse IGBT drive singal, and do not need the IGBT drive circuit mentality of designing of high_voltage isolation auxiliary DC power supply, but it is not given in when IGBT turns off and makes grid produce the biased measure of back-pressure, cause IGBT turn-off speed slower, drive waveforms controls inaccuracy, turns off reliability reduce when collector current is larger.
IGBT drive circuit general at present, generally have that pulse transformer volume is comparatively large, transmission pulse duty ratio is limited, need high_voltage isolation auxiliary DC power supply and without in the problems such as reverse bias grid voltage one or more.
Summary of the invention
The technical problem to be solved in the present invention: provide a kind of and turn off the high IGBT drive circuit of reliability.
Technical scheme of the present invention: described circuit comprises signal generating circuit 1, power amplification circuit 2, high_voltage isolation circuit 3, stretch circuit 4, current foldback circuit 5 and comparator circuit 6, the output signal of signal generating circuit 1 is two-way narrow pulse signal, the signal output part of signal generating circuit 1, power amplification circuit 2, high_voltage isolation circuit 3, stretch circuit 4, and the grid of IGBT connects successively, the output of comparator circuit 6 is connected with the input of current foldback circuit 5, the output of current foldback circuit 5 is connected with the input of signal generating circuit 1.
One as the technical program is improved, and what power amplification circuit 2 adopted is bridge push pull circuit.
One as the technical program is improved, described bridge push pull circuit comprises two groups of NPN type and PNP type triode combination, often in group, base stage and the emitter of NPN type triode are connected with the base stage of PNP type triode and emitter respectively, the base stage of triode combination is connected with signal generating circuit as input, and the emitter of triode combination is connected with high_voltage isolation circuit as output.
One as the technical program is improved, and high_voltage isolation circuit 3 have employed pulse transformer mode.
One as the technical program is improved, stretch circuit comprises full bridge rectifier, electric capacity, resistance and P-channel field-effect transistor (PEFT) pipe, the input of full bridge rectifier is connected with the first secondary of high_voltage isolation circuit 3, the negative terminal of full bridge rectifier is connected to ground, and anode is connected with electric capacity C11 by resistance; The negative terminal of electric capacity C11 is connected to ground, and anode is connected with the grid of IGBT by P-channel field-effect transistor (PEFT) pipe; Stretch circuit is connected with the second secondary of high_voltage isolation circuit.
Beneficial effect of the present invention: the technical program compared with prior art; the present invention proposes a kind of High-voltage Isolated Pulse Transformer that adopts and transmits burst pulse; then stretch circuit is adopted to realize the IGBT drive circuit of broad pulse drive singal; without the need to high_voltage isolation auxiliary DC power supply; and there is signal generating circuit and current foldback circuit Coupling Design; the feature that when IGBT normal turn-off and overcurrent protection turn off, grid back-pressure is biased, improves the shutoff reliability when collector current is larger.
Accompanying drawing explanation
Fig. 1 is driving circuit structure schematic diagram;
Fig. 2 is drive circuit impulse waveform schematic diagram;
Fig. 3 is that pulse Turn-on and Turn-off produces circuit diagram;
Fig. 4 is stretch circuit figure;
Fig. 5 is stretch circuit operating state;
Fig. 6 is stretch circuit oscillogram.
Embodiment
Below in conjunction with accompanying drawing, the technical program is described in further details.
As shown in Figure 1, a kind of based on burst pulse demodulation from energy storage IGBT drive circuit, it comprises signal generating circuit 1, power amplification circuit 2, high_voltage isolation circuit 3, stretch circuit 4, current foldback circuit 5 and comparator circuit 6, as shown in Figure 1.First signal output part of signal generating circuit 1 is connected with the first signal input part of power amplification circuit 2, the secondary signal output of signal generating circuit 1 is connected with the secondary signal input of power amplification circuit 2, first signal output part of power amplification circuit 2 is connected with the first signal input part of high_voltage isolation circuit 3, the secondary signal output of power amplification circuit 2 is connected with the secondary signal input of high_voltage isolation circuit 3, the signal output part of high_voltage isolation circuit 3 is connected with the signal input part of stretch circuit 4, the output of stretch circuit 4 is connected with the grid of IGBT.The output of comparator circuit 6 is connected with the input of current foldback circuit 5, and the output of current foldback circuit 5 is connected with the input of signal generating circuit 1.
Drive circuit produce waveform schematic diagram as shown in Figure 2, wherein P
oNand P
oFFthe two pulse signals that signal generating circuit 1 produces, P
tfor the pulse signal of high_voltage isolation circuit 3 input or output, P
gfor being applied to the drive singal of IGBT grid, P
oCfor the pulse signal that overcurrent protection electricity 5 tunnel exports, when overcurrent condition occurs, at P
oCunder the effect of signal, P
oFF, P
tand P
gin signal all can there is certain change in the phase place of pulse, thus occur to turn off IGBT fast instantaneously in short circuit, avoids it to damage.Signal generating circuit 1 produces the two-way narrow pulse signal with control signal same frequency, is respectively signal PON and signal POFF; Power amplification circuit 2 amplifies for signal PON and signal POFF being realized bridge power, and PT is to high_voltage isolation circuit 3 for output signal, and stretch circuit 4 is for being converted to drive singal PG by the output signal of high_voltage isolation circuit 3; After overcurrent condition occurs; comparator circuit 6 outputs signal POC to current foldback circuit 5; current foldback circuit 5 outputs signal to signal generating circuit 1; make its extra output burst pulse on signal POFF; in figure shown in dotted line; thus an extra generation pulse on signal PT, final signal PG additionally exports a negative pulse.
Figure 3 shows that the circuit diagram of signal generating circuit 1, power amplification circuit 2, high_voltage isolation circuit 3 and current foldback circuit 5.Wherein signal generating circuit 1 mainly comprises integrated circuit CD4098 and partial ohmic capacity cell; Power amplification circuit 2 forms primarily of triode; High_voltage isolation circuit 3 have employed pulse transformer mode, and is voltage-source type pulse transformer; Current foldback circuit 5 is primarily of triode and partition capacitance resistance composition.
Figure 4 shows that stretch circuit figure, be made up of passive components such as resistance, electric capacity, diode, triode, voltage-stabiliser tube and field effect transistor.Stretch circuit 4 is at P
oNiGBT is opened fast, at P during arrival
oFFpulse turns off IGBT when arriving fast, and it has the function storing input pulse energy, at P
oNpulse and P
oFFimpulse duration storage power, at P
oNpulse and P
oFFpower, at P to IGBT grid between pulse
oFFcharge and discharge process is stopped after end-of-pulsing.
Figure 5 shows that the circuit flow graph of stretch circuit 4 after Turn-on stage pulse, pulse stretching stage, Turn-off stage pulse and Turn-off pulse during four working stages.
Fig. 6 is the voltage waveform of electric capacity C11 in the stretch circuit 4 adopting PSpice software emulation to obtain and outputs to the voltage waveform of IGBT grid.Visible, after in pulse transformer output signal, the rising edge of Turn-on pulse arrives, IGBT grid voltage waveform rises to positive voltage rapidly by no-voltage, make IGBT conducting, electric capacity C11 is in charged state, and after Turn-on end-of-pulsing, electric capacity C11 is in discharge condition, grid voltage waveform maintains high voltage, and IGBT also maintains conducting.After Turn-off pulse arrives, electric capacity C11 is in charged state again, but IGBT grid voltage is rapidly by just becoming negative, reliable turn-off IGBT.After Turn-off end-of-pulsing, electric capacity C11 complete charge state, now, IGBT grid slowly changes to zero by negative voltage, effectively inhibits the voltage oscillation that magnetic core of pulse transformer Reverse recovery causes.
Signal generating circuit 1 produces the two-way narrow pulse signal with control signal same frequency, is respectively signal PON and signal POFF; Power amplification circuit 2 amplifies for signal PON and signal POFF being realized bridge power, and PT is to high_voltage isolation circuit 3 for output signal, and stretch circuit 4 is for being converted to drive singal PG by the output signal of high_voltage isolation circuit 3; After overcurrent condition occurs; comparator circuit 6 outputs signal POC to current foldback circuit 5; current foldback circuit 5 outputs signal to signal generating circuit 1; make its extra output burst pulse on signal POFF; in figure shown in dotted line; thus an extra generation pulse on signal PT, final signal PG additionally exports a negative pulse.
Composition graphs 3 illustrates present embodiment, and its signal generating circuit 1 comprises chip CD4098-1, chip CD4098-2, chip CD4098-3, resistance R1, resistance R2, resistance R3, resistance R4, resistance R5, resistance R6, resistance R7, electric capacity C1, electric capacity C2, electric capacity C3, NPN type triode Q5, NPN type triode Q6, diode D1, DC power supply VCC1 and DC power supply VCC2;
-Tr end and the Reset end of CD4098-1 are connected with power supply VCC1, and one end of electric capacity C1 is held with the Cx of CD4098-1 and is connected, and the other end of electric capacity C1 holds with the RxCx of CD4098-1 and one end of resistance R1 is connected, and the other end of resistance R1 is connected with VCC1; The Q end of CD4098-1 holds with+the Tr of CD4098-2 and one end of resistance R5 is connected, and+Tr the end of CD4098-1 is connected with control signal;
-Tr end and the Reset end of CD4098-2 are connected with VCC1, one end of electric capacity C2 is held with the Cx of CD4098-2 and is connected, the other end of electric capacity C2 holds with the RxCx of CD4098-2 and one end of resistance R2 is connected, the other end of resistance R2 is connected with power supply VCC, the Q end of CD4098-2 is connected with one end of diode D1, one end of resistance R5 is held with the Q of CD4098-1 and the+Tr of CD4098-2 holds and is connected, the other end of resistance R5 is connected with the first signal output part of current foldback circuit 5 as the first signal input part of signal generating circuit 1, also be connected with the first signal input part of power amplification circuit 2 as the first signal output part of signal generating circuit 1 simultaneously,
+ the Tr of CD4098-3 holds ground connection, the Reset end of CD4098-3 is connected with VCC2, one end of electric capacity C3 is held with the Cx of CD4098-3 and is connected, the other end of electric capacity C3 holds with the RxCx of CD4098-3 and one end of resistance R3 is connected, one end of resistance R3 is held with the RxCx of CD4098-3 and one end of electric capacity C3 is connected, the other end of resistance R3 is connected with VCC2, the Q end of CD4098-3 is connected with one end of resistance R4, one end of resistance R4 is held with the Q of CD4098-3 and is connected, the other end of resistance R4 is connected with the secondary signal input of power amplification circuit 2 as the secondary signal output of signal generating circuit 1,-Tr the end of CD4098-3 is connected as the positive pole of the secondary signal input of signal generating circuit 1 with the secondary signal output of overcurrent protection electric current 5 and diode D1,
Control signal is input to the+Tr end of chip CD4098-1, make the Q end of chip CD4098-1 export with control signal same frequency and the pulse signal of rising edge synch, its pulse duration is determined by resistance R1 and electric capacity C1; The Q end of chip CD4098-1 is connected to the+Tr end of chip CD4098-2, and the Q end of chip CD4098-2 is exported with control signal same frequency and the pulse signal of rising edge synch, and its pulse duration is determined by resistance R2 and electric capacity C2; The Q end of chip CD4098-2 is connected to the-Tr end of chip CD4098-3 by diode D1, when there is no over-current signal, the Q of chip CD4098-3 is held export with control signal same frequency and the Q of rising edge and chip CD4098-2 holds and exports the synchronous pulse signal of pulse falling edge, its pulse duration is determined by resistance R3 and electric capacity C3; The Q of chip CD4098-1 holds output pulse signal PON, and the Q of chip CD4098-3 holds output pulse signal POFF.
Composition graphs 3 illustrates present embodiment, and its current foldback circuit 5 comprises resistance R6, resistance R7, NPN type triode Q5, NPN type triode Q6 and DC power supply VCC2; Current foldback circuit 5 and signal generating circuit 1 Coupling Design, when overcurrent occurs, current foldback circuit 5 directly triggering signal circuit for generating 1 produces shutoff pulse to turn off IGBT fast;
One end of resistance R6 is connected with the base stage of the base stage of NPN type triode Q5 and NPN type triode Q6, and the other end of resistance R6 is connected with over-current signal as the input of current foldback circuit 5; The grounded emitter of NPN type triode Q5, collector electrode is connected with the first signal input part of signal generating circuit 1 as the first signal output part of current foldback circuit 5; The grounded emitter of NPN type triode Q6, one end of resistance R7 is connected with VCC2, and the other end is connected as the collector electrode of the secondary signal output of current foldback circuit 5 with the secondary signal input of signal generating circuit 1 and NPN type triode Q6;
When overcurrent condition occurs, comparator circuit output pulse signal to current foldback circuit 5, NPN type triode Q5 conducting, its collector electrode is in low level, makes the first output of signal generating circuit 1 be low level; Simultaneously, NPN type triode Q6 conducting, its collector electrode sports low level by high level ,-the Tr of signal generating circuit 1 chips CD4098-3 is held and becomes low level from high level, finally makes the extra pulse exporting a rising edge and over-current signal rising edge synch of Q end of chip CD4098-3.
What its power amplification circuit 2 adopted is bridge push pull circuit, and the pulse of output has rising edge and trailing edge faster.Power amplification circuit 2 comprises NPN type triode Q1, PNP type triode Q2, NPN type triode Q3, PNP type triode Q4, DC power supply VCC1 and DC power supply VCC2;
The collector electrode of NPN type triode Q1 is connected with power supply VCC1, the grounded collector of PNP type triode Q2, the base stage of NPN type triode Q1 is connected with the base stage of PNP type triode Q2, and be connected with the first signal output part of signal generating circuit 1 as the first input end of power amplification circuit, the emitter of NPN type triode Q1 is connected with the emitter of PNP type triode Q2, and is connected with the first signal input part of high_voltage isolation circuit 3 as the first output of power amplification circuit 2;
The collector electrode of NPN type triode Q3 is connected with power supply VCC2, the grounded collector of PNP type triode Q4, the base stage of NPN type triode Q3 is connected with the base stage of PNP type triode Q4, and be connected with the secondary signal output of signal generating circuit 1 as the secondary signal input of power amplification circuit 2, the emitter of NPN type triode Q3 is connected with the emitter of PNP type triode Q4, and is connected with the first signal input part of high_voltage isolation circuit 3 as the first signal output part of power amplification circuit 2;
When pulse signal PON is high potential, NPN type triode Q1 and PNP type triode Q4 is in conducting state, NPN type triode Q3 and PNP type triode Q2 is in cut-off state, and the first signal output part of power amplification circuit 2 is high level, and secondary signal output is low level; When pulse signal POFF is high potential, NPN type triode Q3 and PNP type triode Q2 is in conducting state, NPN type triode Q1 and PNP type triode Q4 is in cut-off state, and the first signal output part of power amplification circuit 2 is low level, and secondary signal output is high level;
Composition graphs 3 illustrates present embodiment, its high_voltage isolation circuit 3 is pulse transformer mode, and be voltage-type pulse transformer, drive while the quantity by increasing pulse transformer realizes many IGBT, and the synchronism that each IGBT turns on and off can be ensured;
High_voltage isolation circuit 3 by the first signal output part of power amplification circuit 2 relatively and the pulse signal PT that produces of its secondary signal output carry out high_voltage isolation transmission, adopt pulse transformer mode, the former limit of transformer and secondary all adopt flexible high pressure line, be easy to realize high-voltage isolating, the transmission of energy is realized while signal transmission, do not need extra high_voltage isolation auxiliary DC power supply, and comprise positive voltage burst pulse Turn-on and negative voltage burst pulse Turn-off in the pulse signal PT due to transmission, the combination of transmitted of positive voltage pulse and negative voltage pulse can effectively reduce the volume and weight of high voltage isolating transformer, this pulse transformer comprises a former limit and two secondary, electrical isolation mutually between each winding.
Composition graphs 4 illustrates present embodiment, its stretch circuit 5 comprises resistance R11, resistance R12, resistance R13, resistance R14, resistance R15, resistance R16, resistance R17, resistance R18, resistance R19, resistance R20, electric capacity C11, NPN type triode Q11, NPN type triode Q12, PNP type triode Q13, diode D11, diode D12, diode D13, diode D14, diode D15, diode D17, diode D18, diode D16, diode D16, voltage-stabiliser tube D16, voltage-stabiliser tube D19, voltage-stabiliser tube D20, P-channel field-effect transistor (PEFT) pipe FET1 and P-channel field-effect transistor (PEFT) pipe FET2,
The input of the full bridge rectifier that diode D11, D12, D13 form with D14 is connected with the first secondary of high_voltage isolation circuit 3, the negative terminal of full bridge rectifier is connected to ground, and anode is charged to storage capacitor C11 by R11; The negative terminal of electric capacity C11 is connected to ground, and anode is connected with the grid of IGBT by FET2, FET1, R18, D18; One end of resistance R16, the emitter of triode Q12, the negative pole of diode D19 are connected with one end (4 end) of the second secondary of high_voltage isolation circuit 3, and ground is connected with the other end (5 end) of the second secondary; One end of resistance R20 is connected with the positive pole of electric capacity C11 and the source electrode of FET2, and the other end is connected with one end of resistance R12 and the gate pole of FET2, and the other end of R12 is connected to ground; One end of resistance R13 drains with FET2 and the source electrode of FET1 is connected, and the other end is connected with one end of resistance R14 and the gate pole of FET1; The collector electrode of triode Q11 is connected with the other end of R14, and emitter is connected with the negative pole of D16, and base stage is connected with the negative pole of D15 and the other end of R16; The positive pole of D16 is connected to ground, and the positive pole of D15 is connected with one end of R15; One end of R18 is connected with the drain electrode of the other end of R15 and FET1, and the other end of R18 is connected with the positive pole of the positive pole of diode D17, diode D18 and the base stage of triode Q13; The negative pole of diode D17 is connected with the collector electrode of triode Q12, and one end of resistance R17 is connected with the base stage of triode Q12, and the other end is connected to ground; The emitter of triode Q13 is connected with the negative pole of diode D18 and the grid of IGBT, and collector electrode is connected with the positive pole of diode D19; Voltage-stabiliser tube D20 is connected with D21 anti-series, afterwards grid with IGBT in parallel and emitter, the grid of resistance R19 and IGBT and emitter parallel connection;
Turn-on pulse in signal PG and Turn-off pulse are input to stretch circuit 4 through high_voltage isolation circuit 3; Composition graphs 5 illustrates the operating state of stretch circuit 4 during Turn-on impulse duration, pulse stretching after (between Turn-on pulse falling edge and Turn-off rising edge of a pulse), Turn-off impulse duration, Turn-off end-of-pulsing during common four-stage;
For avoiding IGBT gate drive voltage value lower, stretch circuit 4 devises the precharge link of storage capacitor C11; Only have when the voltage of C11 is higher than the threshold value set, FET2 just meeting conducting, such C11 just can power to IGBT grid, guarantees that IGBT can not work in linear condition;
After pre-charge process terminates, stretch circuit 4 enters the Turn-on pulsed operation stage, as shown in Figure 5 a; First secondary of high_voltage isolation circuit 3 is charged to electric capacity C11 by full bridge rectifier and resistance R11, second secondary makes triode Q11 conducting by resistance R16 simultaneously, now, electric capacity C11 makes the gate pole of field effect transistor FET1 bear negative voltage relative to source electrode by FET2, R13, R14, Q11 and voltage-stabiliser tube D16, makes its conducting; After FET1 conducting, electric capacity C11 is just applied to the grid of IGBT by field effect transistor FET2, field effect transistor FET1, resistance R18, diode D8, make IGBT conducting.The conducting speed of IGBT regulates by resistance R18;
After Turn-on end-of-pulsing, stretch circuit 4 enters the pulse stretching stage, as shown in Figure 5 b; Now 4 ends of the second secondary of high_voltage isolation circuit 3 are by high potential vanishing current potential, but the base stage of triode Q11 is still positive voltage bias, and Q11 still maintains conducting, and FET1 also maintains conducting, electric capacity C11 continues as IGBT driving and provides energy, maintains IGBT conducting;
When Turn-off pulse arrives, stretch circuit 4 enters the Turn-off pulsed operation stage, as shown in Figure 5 c; Now 4 ends of the second secondary of high_voltage isolation circuit 3 become negative potential from zero potential, and the base voltage of triode Q11 also pulls down to negative potential, and Q11 is ended, and then FET1 cut-off, and electric capacity C4 no longer powers to IGBT grid; Simultaneously under the effect of Turn-off pulse, triode Q12 and Q13 conducting, the grid of IGBT discharges rapidly, and realizes reverse charging, and produce negative sense grid voltage, IGBT fast and reliable is turned off, and IGBT turn-off speed is controlled by the conducting speed of triode Q12;
The current direction of the after-stage of Turn-off end-of-pulsing as fig 5d; After Turn-off end-of-pulsing, 4 ends of the second secondary of high_voltage isolation circuit 3 are by electronegative potential vanishing current potential, and triode Q12 and Q13 ends, and the reverse charging process of IGBT grid terminates, and enters back discharge process; Now, the back discharge process of grid capacitance can only be realized by resistance R19, and the impact of the oscillation produced when can not be subject to magnetic core of pulse transformer Reverse recovery, inhibit the possibility that IGBT misleads again, the speed of back discharge process regulates by resistance R19;
When overcurrent condition occurs, signal PT additionally exports a Turn-off pulse, makes rapidly IGBT realize grid back-pressure and is biased, and ensure that the fast and reliable of IGBT turns off, current direction is identical with the Turn-off pulsed operation stage;
Figure 6 shows that the driving voltage waveform of electric capacity C11 voltage waveform and the IGBT grid adopting PSpice emulation to obtain, the pulse duration of Turnon and the Turnoff burst pulse adopted is 2 μ s, can find out, at Turnon and Turnoff impulse duration, electric capacity C11 is in charged state, in the pulse stretching stage, electric capacity C11 is in discharge condition, IGBT grid voltage waveform is in the chien shih IGBT conducting of Turnon rising edge and Turnoff rising edge, obtain broad pulse driving force, be in back-pressure at Turnoff impulse duration to be biased, ensure that the fast and reliable of IGBT turns off, after Turnoff terminates, IGBT grid is biased by back-pressure and returns to zero potential gradually, avoid the concussion of grid voltage,
Although the present invention is described by above embodiment, and be not used to limit the present invention, without departing from the spirit and scope of the present invention, those of ordinary skill in the art can make various modifications and variations to the present invention.Therefore, the invention is intended to cover the improvement within all scopes falling into appended claims and equivalent thereof and change.
Claims (5)
1. one kind based on burst pulse demodulation from energy storage IGBT drive circuit, it is characterized by: described circuit comprises signal generating circuit (1), power amplification circuit (2), high_voltage isolation circuit (3), stretch circuit (4), current foldback circuit (5) and comparator circuit (6), the output signal of signal generating circuit (1) is two-way narrow pulse signal, the signal output part of signal generating circuit (1), power amplification circuit (2), high_voltage isolation circuit (3), stretch circuit (4), and the grid of IGBT connects successively, the output of comparator circuit (6) is connected with the input of current foldback circuit (5), the output of current foldback circuit (5) is connected with the input of signal generating circuit (1).
2. according to claim 1 a kind of based on burst pulse demodulation from energy storage IGBT drive circuit, it is characterized by: what power amplification circuit (2) adopted is bridge push pull circuit.
3. according to claim 2 a kind of based on burst pulse demodulation from energy storage IGBT drive circuit, it is characterized by: described bridge push pull circuit comprises two groups of NPN type and PNP type triode combination, often in group, base stage and the emitter of NPN type triode are connected with the base stage of PNP type triode and emitter respectively, the base stage of triode combination is connected with signal generating circuit as input, and the emitter of triode combination is connected with high_voltage isolation circuit as output.
4. according to claim 1 a kind of based on burst pulse demodulation from energy storage IGBT drive circuit, it is characterized by: high_voltage isolation circuit (3) have employed pulse transformer mode.
5. according to claim 1 a kind of based on burst pulse demodulation from energy storage IGBT drive circuit, it is characterized by: stretch circuit comprises full bridge rectifier, electric capacity, resistance and P-channel field-effect transistor (PEFT) pipe, the input of full bridge rectifier is connected with the first secondary of high_voltage isolation circuit (3), the negative terminal of full bridge rectifier is connected to ground, and anode is connected with electric capacity C11 by resistance; The negative terminal of electric capacity C11 is connected to ground, and anode is connected with the grid of IGBT by P-channel field-effect transistor (PEFT) pipe;
Stretch circuit is connected with the second secondary of high_voltage isolation circuit.
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| CN101640526A (en) * | 2009-08-19 | 2010-02-03 | 广州金升阳科技有限公司 | IGBT driving circuit embedded with isolating source |
| CN102832917A (en) * | 2012-08-21 | 2012-12-19 | 台达电子工业股份有限公司 | Switch drive circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107425837A (en) * | 2017-07-27 | 2017-12-01 | 北京航空航天大学 | A kind of high_voltage isolation type MOSFET drive circuits |
| CN107843890A (en) * | 2017-10-31 | 2018-03-27 | 海鹰企业集团有限责任公司 | Sonar transmission circuit |
| WO2021017862A1 (en) * | 2019-07-26 | 2021-02-04 | 卢驭龙 | Protection circuit and device |
| CN110601509A (en) * | 2019-10-12 | 2019-12-20 | 阳光电源股份有限公司 | IGBT drive protection circuit and fault protection method thereof |
| CN110601509B (en) * | 2019-10-12 | 2021-09-03 | 阳光电源股份有限公司 | IGBT drive protection circuit and fault protection method thereof |
| CN110850201A (en) * | 2019-10-31 | 2020-02-28 | 苏州浪潮智能科技有限公司 | High-frequency narrow pulse detection locking circuit and method |
| CN110850201B (en) * | 2019-10-31 | 2021-09-03 | 苏州浪潮智能科技有限公司 | High-frequency narrow pulse detection locking circuit and method |
| CN111276952A (en) * | 2020-01-19 | 2020-06-12 | 上海华虹宏力半导体制造有限公司 | ESD protection circuit |
| CN111276952B (en) * | 2020-01-19 | 2022-03-08 | 上海华虹宏力半导体制造有限公司 | ESD protection circuit |
| CN113114110A (en) * | 2021-04-23 | 2021-07-13 | 长城电源技术有限公司 | Power supply driving module and power supply equipment |
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