CN208299680U - A kind of driving circuit for high voltage charging power supply inversion circuit main switch IGBT - Google Patents
A kind of driving circuit for high voltage charging power supply inversion circuit main switch IGBT Download PDFInfo
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- CN208299680U CN208299680U CN201821022732.0U CN201821022732U CN208299680U CN 208299680 U CN208299680 U CN 208299680U CN 201821022732 U CN201821022732 U CN 201821022732U CN 208299680 U CN208299680 U CN 208299680U
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Abstract
The utility model discloses a kind of driving circuits for high voltage charging power supply inversion circuit main switch IGBT, it include pwm chip SG3525, reversed high-speed MOSFET driver device, by resistance R1, the clamping protective circuit of diode D1 and diode D2 composition, by resistance R2, resistance R3, resistance R4, the partial pressure triggering level of diode D3 and capacitor C1 composition forms network, by metal-oxide-semiconductor T1, resistance R5, resistance R6, resistance R7, the triggering level output circuit for the push-pull configuration that resistance R8 and metal-oxide-semiconductor T2 is formed, pulse transformer Tr1, capacitor C2, capacitor C3, interface ST1 and interface ST2.The utility model utilizes two-stage drive circuit, substantially reduces the rising and falling edges time of IGBT driving signal, improves the stability of triggering；Triggering end provides the trigger signal of pulse transformer isolation all the way simultaneously, can be used for the synchronous triggering in the circuits such as absorption.
Description
Technical field
The utility model relates to high voltage charging power supply technical fields, more particularly to one kind to return for high voltage charging power supply inversion
The driving circuit of road main switch IGBT.
Background technique
Capacitor high voltage rechargeable power generally uses the form of switch inversion, cardinal principle be first by the commercial power rectification 220V,
It recycles inversion transformation technique that the direct current after rectification is become alternating current, then boosts by high-tension transformer, finally by high pressure
It charges after rectification to high-voltage capacitance.Switching device generallys use IGBT (Insulated Gate Bipolar
Transistor), insulated gate bipolar transistor is by BJT(double pole triode) and MOS(insulating gate type field effect tube) group
At compound full-control type voltage driven type power semiconductor, have the high input impedance of MOSFET and the low conducting pressure of BJT concurrently
Advantage of both drop, therefore the inversion circuit main switch of switch inversion formula charge power supply mostly uses IGBT module.
The stabilized driving of IGBT module is the important leverage of charge power supply working performance, usually requires that the rising of driving signal
The failing edge time should be short as far as possible, and should have back bias voltage to protect IGBT and accelerate the turn-off speed of IGBT.Usual inversion is returned
Routing pwm chip SG3525 generates the switch triggering signal for meeting timing requirements, but SG3525 driving capability is on the weak side, cannot
It is directly used in driving IGBT module, so needing to add the driving circuit of triggering amplification in its back-end.
Utility model content
The utility model aim is exactly in order to make up the defect of prior art, to provide a kind of for high voltage charging power supply inversion
The driving circuit of circuit main switch IGBT.
The utility model is achieved through the following technical solutions:
A kind of driving circuit for high voltage charging power supply inversion circuit main switch IGBT, includes pwm chip
SG3525, reversed high-speed MOSFET driver device, the clamping protective circuit being made of resistance R1, diode D1 and diode D2, by
The partial pressure triggering level that resistance R2, resistance R3, resistance R4, diode D3 and capacitor C1 are formed forms network, by metal-oxide-semiconductor T1, electricity
Hinder triggering level output circuit, the pulse transformer of the push-pull configuration that R5, resistance R6, resistance R7, resistance R8 and metal-oxide-semiconductor T2 are formed
Tr1, capacitor C2, capacitor C3, the output pin connection of interface ST1 and interface ST2, the pwm chip SG3525 are reversed
The input pin of high-speed MOSFET driver device, the resistance R1 and diode D1 are in parallel, and diode D1 negative terminal connects positive supply electricity
Pressure, positive terminating diode D2 negative terminal, diode D2 positive ending grounding, one end connection that resistance R1 is connect with diode D1 anode are reversed
The output pin of high-speed MOSFET driver device, resistance R2, resistance R3, resistance R4 series connection, wherein resistance R2 mono- terminates positive supply electricity
Pressure, resistance R4 mono- terminate negative supply voltage, and capacitor C1 and diode D3 are parallel to the both ends resistance R3, capacitor C1 and diode D3's
One end of negative terminal connection is connect with the input pin of reversed high-speed MOSFET driver device, and resistance R5 connects with resistance R6, resistance R7
It connects with resistance R8, the pole S of metal-oxide-semiconductor T1 meets positive voltage, the series connection central point of the pole G connecting resistance R2 and resistance R3, resistance R5
It is connect with the pole D of metal-oxide-semiconductor T1 with resistance R7, the pole S of metal-oxide-semiconductor T2 connects negative supply voltage, and resistance R6 and resistance R8 are and MOS
The pole D of pipe T2 connects, the central point of connecting of the connection of the pole G the resistance R3 and resistance R4 of metal-oxide-semiconductor T2, the series connection of resistance R5, resistance R6
Midpoint forms and exports all the way with being connected to interface ST1 and reference；The series connection midpoint of R7, R8 first meet capacitor C2 and pulse transformer Tr1
Isolation, the output of pulse transformer are followed by through capacitor C3 isolation to ST2 forming isolation output all the way again.
The model UC3709 of the reversed high-speed MOSFET driver device.
The metal-oxide-semiconductor T1 is p-type metal-oxide-semiconductor, and metal-oxide-semiconductor T2 is N-type metal-oxide-semiconductor.
The utility model has the advantages that: the utility model utilizes two-stage drive circuit, substantially reduces IGBT driving signal
The rising and falling edges time (300ns → 50ns), improve the stability of triggering；Protection IGBT, offer -15V bias prevents
False triggering and quickening IGBT turn-off speed；Triggering end provides the trigger signal of pulse transformer isolation all the way simultaneously, can be used for inhaling
The synchronous triggering in the circuits such as receipts.
Detailed description of the invention
Fig. 1 is the circuit structure diagram of the utility model.
Fig. 2 is test waveform figure.
Specific embodiment
As shown in Figure 1, a kind of driving circuit for high voltage charging power supply inversion circuit main switch IGBT, includes PWM
Control chip SG3525, reversed high-speed MOSFET driver device are protected by the clamper that resistance R1, diode D1 and diode D2 are formed
Circuit forms network, by MOS by the partial pressure triggering level that resistance R2, resistance R3, resistance R4, diode D3 and capacitor C1 are formed
Triggering level output circuit, the arteries and veins for the push-pull configuration that pipe T1, resistance R5, resistance R6, resistance R7, resistance R8 and metal-oxide-semiconductor T2 are formed
Rush transformer Tr1, capacitor C2, capacitor C3, interface ST1 and interface ST2, the output pin of the pwm chip SG3525
The input pin of reversed high-speed MOSFET driver device is connected, the resistance R1 and diode D1 are in parallel, and diode D1 negative terminal connects
Positive voltage, positive terminating diode D2 negative terminal, diode D2 positive ending grounding, one end that resistance R1 is connect with diode D1 anode
The output pin of reversed high-speed MOSFET driver device is connected, resistance R2, resistance R3, resistance R4 series connection, wherein resistance R2 mono- is terminated
Positive voltage, resistance R4 mono- terminate negative supply voltage, and capacitor C1 and diode D3 are parallel to the both ends resistance R3, capacitor C1 and two
One end of the negative terminal connection of pole pipe D3 is connect with the input pin of reversed high-speed MOSFET driver device, and resistance R5 and resistance R6 go here and there
Connection, resistance R7 connect with resistance R8, and the pole S of metal-oxide-semiconductor T1 connects positive voltage, the series connection center of the pole G connecting resistance R2 and resistance R3
Point, resistance R5 and resistance R7 are connect with the pole D of metal-oxide-semiconductor T1, and the pole S of metal-oxide-semiconductor T2 connects negative supply voltage, resistance R6 and resistance
R8 is connect with the pole D of metal-oxide-semiconductor T2, the central point of connecting of the connection of the pole G the resistance R3 and resistance R4 of metal-oxide-semiconductor T2, resistance R5, resistance
The series connection midpoint of R6 forms and exports all the way with being connected to interface ST1 and reference；The series connection midpoint of R7, R8 first meet capacitor C2 and pulse becomes
Depressor Tr1 isolation, the output of pulse transformer are followed by through capacitor C3 isolation to ST2 forming isolation output all the way again.
The model UC3709 of the reversed high-speed MOSFET driver device.
The metal-oxide-semiconductor T1 is p-type metal-oxide-semiconductor, and metal-oxide-semiconductor T2 is N-type metal-oxide-semiconductor.
Two-stage drive circuit is designed to realize above-mentioned requirements.The output pin connection UC3709's of SG3525 chip is defeated first
Entering pin, UC3709 has certain enhancing ability to driving signal, but can't reach the requirement of high speed and low jitter, and
Output is reverse signal, is reversely described as follows with driving capability enhancing, circuit so adding push-pull circuit again below and carrying out signal:
1, R1 and D1 is in parallel, and D1 negative terminal connects positive voltage, positive to terminate D2 negative terminal, and D2 positive ending grounding forms clamper protection
Circuit carries out voltage protection to the output signal of UC3709；
2, R2, R3, R4 connect to form partial pressure triggering level formation network, and wherein R2 mono- terminates positive voltage, the one end R4
Negative supply voltage is connect, C1 and D3 are parallel to the both ends R3 and form protection and absorb；
3, T1, R5, R6, R7, R8 and T2 form the triggering level output circuit of push-pull configuration；T1 is p-type metal-oxide-semiconductor, S termination
Positive voltage；T2 is N-type metal-oxide-semiconductor, and D terminates negative supply voltage；
4, R5, the series connection midpoint of R6 forms and exports all the way with being connected to interface ST1 and reference；The series connection midpoint of R7, R8 first connect
Capacitor C2 and pulse transformer Tr1 isolation, the output of pulse transformer are followed by ST2 formation being isolated all the way defeated through C3 isolation again
Out, the triggering for the switching device to absorbing circuit etc..
Each element model and parameter are as follows in figure:
Metal-oxide-semiconductor T1 model BUZ171, VDS=- 50V, ID=- 8A, R DS (on)=0.3 Ω；
Metal-oxide-semiconductor T2 model BUZ71A, VDS=50V, ID=13A, RDS (on)=0.12 Ω；
Resistance R1=1k Ω, R2=47.5 Ω, R3=47.5k Ω, R4=10k Ω, R5=R6=Ω of R7=R8=10；
The μ of capacitor C1=0.1 μ of F, C2=C3=0.33 F；
Diode D1 and D2 model 1N4148, voltage-stabiliser tube D3 model 20V pressure stabilizing.
When circuit works normally
VUC3709-7When=15V；
VG(T1)=15V, VGS(T1)=0V, so T1 is turned off；
VG(T2)=15V- (15V+15V)/(10kΩ+47.5kΩ)×47.5kΩ=-9.78V
VGS(T2)=-9.78V-(-15) V=5.22V,
The condition of opening of T2 is VGS> 3V, so T2 is connected, ST1 output signal is 15V,
Similarly
VUC3709-7When=0V；
VG(T1)=0V, VGS(T1)It is VGS < -3V that=- 15V, T1, which open condition, so T1 is connected；
VG(T2)=-15V/ (10k Ω+47.5k Ω) × 47.5k Ω=- 12.39V,
VGS(T2)=-12.39V-(-15) V=2.61V, so T2 is turned off, ST1 output signal is -15V.
Test waveform is as shown in Fig. 2, wherein 1 blue signal of channel is SG3525 output signal, rising edge about 300ns, nothing
Method meets the needs of IGBT pipe stablizes triggering and conducting；2 green of channel is UC3709 output signal, and red channel 3 is that final ST1 is defeated
Signal out, rising edge about 50ns greatly improve the speed and stability of triggering, and there is back bias voltage to carry out shutdown auxiliary.
Claims (3)
1. a kind of driving circuit for high voltage charging power supply inversion circuit main switch IGBT, it is characterised in that: include PWM control
Coremaking piece SG3525, reversed high-speed MOSFET driver device protect electricity by the clamper that resistance R1, diode D1 and diode D2 are formed
Road forms network, by metal-oxide-semiconductor by the partial pressure triggering level that resistance R2, resistance R3, resistance R4, diode D3 and capacitor C1 are formed
The triggering level output circuit for the push-pull configuration that T1, resistance R5, resistance R6, resistance R7, resistance R8 and metal-oxide-semiconductor T2 are formed, pulse
The output pin company of transformer Tr1, capacitor C2, capacitor C3, interface ST1 and interface ST2, the pwm chip SG3525
The reversed input pin to high-speed MOSFET driver device, the resistance R1 and diode D1 are in parallel, and diode D1 negative terminal connects just
Supply voltage, positive terminating diode D2 negative terminal, diode D2 positive ending grounding, one end that resistance R1 is connect with diode D1 anode connect
The reversed output pin to high-speed MOSFET driver device, resistance R2, resistance R3, resistance R4 series connection, wherein resistance R2 mono- is terminated just
Supply voltage, resistance R4 mono- terminate negative supply voltage, and capacitor C1 and diode D3 are parallel to the both ends resistance R3, capacitor C1 and two poles
One end of the negative terminal connection of pipe D3 is connect with the input pin of reversed high-speed MOSFET driver device, and resistance R5 connects with resistance R6,
Resistance R7 connects with resistance R8, and the pole S of metal-oxide-semiconductor T1 connects positive voltage, the series connection central point of the pole G connecting resistance R2 and resistance R3,
Resistance R5 and resistance R7 is connect with the pole D of metal-oxide-semiconductor T1, and the pole S of metal-oxide-semiconductor T2 connects negative supply voltage, and resistance R6 and resistance R8 are equal
It is connect with the pole D of metal-oxide-semiconductor T2, the central point of connecting of the connection of the pole G of metal-oxide-semiconductor T2 resistance R3 and resistance R4, resistance R5, resistance R6
Series connection midpoint forms and exports all the way with being connected to interface ST1 and reference；The series connection midpoint of R7, R8 first connect capacitor C2 and pulse transformer
Tr1 isolation, the output of pulse transformer are followed by through capacitor C3 isolation to ST2 forming isolation output all the way again.
2. the driving circuit according to claim 1 for high voltage charging power supply inversion circuit main switch IGBT, feature
It is: the model UC3709 of the reversed high-speed MOSFET driver device.
3. the driving circuit according to claim 1 for high voltage charging power supply inversion circuit main switch IGBT, feature
Be: the metal-oxide-semiconductor T1 is p-type metal-oxide-semiconductor, and metal-oxide-semiconductor T2 is N-type metal-oxide-semiconductor.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821022732.0U CN208299680U (en) | 2018-06-29 | 2018-06-29 | A kind of driving circuit for high voltage charging power supply inversion circuit main switch IGBT |
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| CN201821022732.0U CN208299680U (en) | 2018-06-29 | 2018-06-29 | A kind of driving circuit for high voltage charging power supply inversion circuit main switch IGBT |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111740570A (en) * | 2020-07-15 | 2020-10-02 | 广东恒发电器科技有限公司 | Efficient isolation driving circuit and driving method |
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2018
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111740570A (en) * | 2020-07-15 | 2020-10-02 | 广东恒发电器科技有限公司 | Efficient isolation driving circuit and driving method |
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