CN111740570A - Efficient isolation driving circuit and driving method - Google Patents
Efficient isolation driving circuit and driving method Download PDFInfo
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- CN111740570A CN111740570A CN202010680356.XA CN202010680356A CN111740570A CN 111740570 A CN111740570 A CN 111740570A CN 202010680356 A CN202010680356 A CN 202010680356A CN 111740570 A CN111740570 A CN 111740570A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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Abstract
A high-efficiency isolation driving circuit comprises a switching power supply module, a control chip and an isolation driving module, wherein the switching power supply module comprises a power supply end, the switching power supply module supplies power to the control chip and the isolation driving module through the power supply end, and the isolation driving module comprises a low-power MOS tube Q1, a low-power MOS tube Q2, a capacitor C5 and a transformer T1; the control chip enables the capacitor C5 to charge the low-voltage winding of the transformer T1 by controlling the MOS tube Q1, the control chip enables the capacitor C5 to discharge the low-voltage winding of the transformer T1 by controlling the MOS tube Q2, and the high-voltage winding of the transformer T1 is connected with the high-power MOS tube Q3. By adopting the technical scheme, only one level is used, and the two paths of TTL levels are directly used for controlling the two paths of MOS tubes by using the low-power MOS tubes, so that the isolation transformer is controlled. The transformer adopts the turn ratio of boosting to realize the conversion of the level, thereby achieving the purpose of driving the high-power MOS tube. The invention also provides a corresponding driving method.
Description
Technical Field
The invention relates to the technical field of isolation driving circuits, in particular to a high-efficiency isolation driving circuit and a driving method.
Background
In the prior art, two driving levels are usually required for driving a high-power MOS transistor, one is a signal control level +5V, and the other is +15V, which requires level conversion, which causes signal delay and circuit complexity. Improvements are therefore needed.
Disclosure of Invention
The invention provides a high-efficiency isolation driving circuit, which can realize the purpose of driving a high-power MOS tube only by one level. In order to achieve the purpose, the invention adopts the following technical scheme:
a high-efficiency isolation driving circuit comprises a switching power supply module, a control chip and an isolation driving module, wherein the switching power supply module comprises a power supply end, the switching power supply module supplies power to the control chip and the isolation driving module through the power supply end, and the isolation driving module comprises a low-power MOS tube Q1, a low-power MOS tube Q2, a capacitor C5 and a transformer T1; the control chip enables the capacitor C5 to charge the low-voltage winding of the transformer T1 by controlling the MOS tube Q1, the control chip enables the capacitor C5 to discharge the low-voltage winding of the transformer T1 by controlling the MOS tube Q2, and the high-voltage winding of the transformer T1 is connected with the high-power MOS tube Q3.
Further, the power supply end is a 5V power supply end.
Further, the type of the MOS transistor Q1 is AO3400, the type of the MOS transistor Q2 is AO3401, and the type of the MOS transistor Q3 is 9N 150.
Further, the isolation driving module comprises a first driving unit and a second driving unit, and the control chip controls the capacitor C5 to charge and discharge the low-voltage winding of the transformer T1 through the first driving unit and the second driving unit, respectively.
Further, the input end of the first driving unit is connected with the control chip, the first driving unit includes a resistor R18, a resistor R19 and a MOS transistor Q1, a pin RA5 of the control chip is connected with a gate of the MOS transistor Q1 through a resistor R19, a power supply end of the switching power supply module is connected with a gate of the MOS transistor Q1 through a resistor R18, a power supply end of the switching power supply module is connected with a drain of the MOS transistor Q1, a source of the MOS transistor Q1 is connected with an input end of a capacitor C5, and an output end of the capacitor C5 is connected with an input end of the low-voltage winding.
Further, the first driving unit further comprises a resistor R6, and the source of the MOS transistor Q1 is connected to the input terminal of the capacitor C5 through a resistor R6.
Further, the second driving unit includes a resistor R17, a resistor R1, and a MOS transistor Q2, the pin RA1 of the control chip is connected to the gate of the MOS transistor Q2 through the resistor R17, the gate of the MOS transistor Q2 is grounded through the resistor R1, the drain of the MOS transistor Q2 is grounded, and the source of the MOS transistor Q2 is connected to the input terminal of the capacitor C5.
Further, the second driving unit further comprises a resistor R11, and the source of the MOS transistor Q2 is connected to the input terminal of the capacitor C5 through a resistor R11.
In addition, the invention also provides a driving method adopting the high-efficiency isolation driving circuit, the control chip respectively controls the charging and discharging of the capacitor C5 to the low-voltage winding of the transformer T1 through two paths of low-power MOS tubes Q1 and Q2, and the driving and the control of the high-voltage winding of the transformer T1 to the high-power MOS tube Q3 are realized.
Further, the driving method specifically includes the steps of:
(1) the control chip controls the conduction of the MOS tube Q1, the input end of the low-voltage winding of the transformer T1 is charged through the capacitor C5, and the other end of the low-voltage winding of the transformer T1 is grounded;
(2) the control chip controls the MOS tube Q1 to be cut off, and the charging is finished;
(3) the control chip controls the conduction of the MOS tube Q2, the capacitor C5 discharges the input end of the low-voltage winding of the transformer T1, and the S pole of the MOS tube Q2 is grounded;
(4) the control chip controls the MOS tube Q2 to cut off, and the discharge is finished.
By adopting the technical scheme, only one level is used, and the two paths of TTL levels are directly used for controlling the two paths of MOS tubes by using the low-power MOS tubes, so that the isolation transformer is controlled. The transformer adopts the turn ratio of boosting to realize the conversion of the level, thereby achieving the purpose of driving the high-power MOS tube.
Drawings
Fig. 1 is a circuit diagram of an LC quasi-resonant circuit.
Fig. 2 is a circuit diagram of an isolated driver module.
Detailed Description
The invention is described below with reference to the accompanying drawings and specific embodiments.
The application of the high-efficiency isolation driving circuit in the invention is not limited to the LC quasi-resonant circuit, and the LC quasi-resonant circuit is taken as an example for description.
As shown in fig. 1, a novel LC quasi-resonant circuit includes an isolation driving circuit, an LC series resonant module, and a comparison circuit module, where the isolation driving circuit includes a switching power supply module, a control chip, and an isolation driving module, and in this embodiment, the control chip employs a single chip microcomputer.
The comparison circuit module collects signals of the LC series resonance module and feeds the signals back to the control chip, and the control chip acquires the signals of the comparison circuit module and controls the isolation driving module to control the LC series resonance module.
And the switching power supply module outputs alternating mains supply as direct-current voltage and outputs two groups, one group of the direct-current voltage is used for supplying power to the coil L in the LC series resonance module, and the other group of the direct-current voltage +5V is used for supplying power to the control chip, the comparison circuit module and the isolation driving module.
The specific structure of each module of the circuit is as follows:
the LC series resonance module comprises a coil L, MOS tube Q3, a diode D1 and a capacitor C1, one end of the coil L is connected with a pin VOT of the switching power supply module, the other end of the coil L forms an output end A of the LC quasi-resonance circuit, the output end A is connected with a drain electrode of an MOS tube Q3, a grid electrode of the MOS tube Q3 is connected with an output end of the isolation driving module, a source electrode of the MOS tube Q3 is connected with an anode of the diode D1, and a cathode of the diode D1 is connected with a current comparison end DL of the comparison circuit module; the output end A is grounded through a capacitor C1, and the output end A is connected with a voltage comparison end DY of the comparison circuit module.
Specifically, the method comprises the following steps:
the output end A is connected with the voltage comparison end DY through a voltage division module, the voltage division module comprises a resistor R3 and a resistor R4 which are sequentially connected in series, and one end, opposite to the resistor R3, of the resistor R4 is grounded through the resistor R5. The cathode of the diode D1 is grounded through a resistor R7 and a resistor R10 which are arranged in parallel; the cathode of the diode D1 is connected to the current comparison terminal DL through a resistor R2, and the resistor R2 is grounded through a capacitor C2 with respect to one end of the diode D1.
The comparison circuit module comprises a current comparison unit and a voltage comparison unit, wherein the input end of the current comparison unit is a current comparison end DL, the input end of the voltage comparison unit is a voltage comparison end DY, and the units of the voltage comparison end and the units of the current comparison end are connected with the control chip.
Specifically, the voltage comparison unit includes a comparator Z2B, an inverting input terminal of the comparator Z2B is a voltage comparison terminal DY, an output terminal of the comparator Z2B is connected with a pin RA2 of the control chip, and a 5V power supply terminal of the switching power supply module is connected with an output terminal of the comparator Z2B through a resistor R15; the current comparison unit comprises a comparator Z2A, the reverse input end of the comparator Z2A is a current comparison end DL, the output end of the comparator Z2A is connected with a pin RA3 of the control chip, and the 5V power supply end of the switching power supply module is connected with the output end of the comparator Z2A through a resistor R16; the comparison circuit module further comprises a diode D2, a capacitor C3, a capacitor C4, a resistor R12, a resistor R13 and a resistor R14; the 5V power supply end of the switching power supply module is connected with the non-inverting input end of a comparator Z2B through a resistor R12, the negative pole of a diode D2 is connected with the non-inverting input end of the comparator Z2B, the positive pole of a diode D2 is grounded, one end of a capacitor C3 is connected with the non-inverting input end of a comparator Z2B, the other end of the capacitor C3 is grounded, one end of the resistor R14 is connected with the non-inverting input end of a comparator Z2B, and the other end of the resistor R14 is grounded through a resistor R13 and a capacitor C4 which are arranged in parallel; the positive power end of the comparator Z2A is connected with the 5V power supply end of the switching power supply module, and the non-inverting input end of the comparator Z2A is grounded through a resistor R13 and a capacitor C4 which are arranged in parallel.
As shown in fig. 1 and 2, the isolation driving module includes a first driving unit, a second driving unit, and a transformer T1, an input end of the first driving unit is connected to the control chip, an output end of the first driving unit is connected to an input end of the low-voltage winding of the transformer through a capacitor C5, an input end of the second driving unit is connected to the control chip, and an output end of the second driving unit is connected to an input end of the low-voltage winding of the transformer through a capacitor C5.
Specifically, the first driving unit comprises resistors R6, R18, a resistor R19 and a MOS transistor Q1, a pin RA5 of the control chip is connected with a gate of the MOS transistor Q1 through a resistor R19, a 5V power supply end of the switching power supply module is connected with a gate of the MOS transistor Q1 through a resistor R18, the 5V power supply end of the switching power supply module is connected with a drain of the MOS transistor Q1, a source of the MOS transistor Q1 is connected with an input end of a capacitor C5 through a resistor R6, and an output end of the capacitor C5 is connected with an input end of the low-voltage winding; the second driving unit comprises a resistor R17, a resistor R1, a resistor R11 and a MOS tube Q2, wherein a pin RA1 of the control chip is connected with a grid electrode of the MOS tube Q2 through a resistor R17, a grid electrode of the MOS tube Q2 is grounded through the resistor R1, a drain electrode of the MOS tube Q2 is grounded, and a source electrode of the MOS tube Q2 is connected with an input end of a capacitor C5 through a resistor R11. One end of the high-voltage winding of the transformer T1 is connected with the grid of the MOS tube Q3 through a resistor R8 and a resistor R9 which are arranged in parallel, and the other end of the high-voltage winding of the transformer T1 is connected with the source of the MOS tube Q3.
In the isolation driving module, the MOS transistor Q1 and the MOS transistor Q2 are low-power MOS transistors, the MOS transistor Q3 is a high-power MOS transistor, the MOS transistor Q1 is AO3400, the MOS transistor Q2 is AO3401, and the MOS transistor Q3 is 9N 150. The control chip enables the capacitor C5 to charge the low-voltage winding of the transformer T1 by controlling the MOS tube Q1, the control chip enables the capacitor C5 to discharge the low-voltage winding of the transformer T1 by controlling the MOS tube Q2, and the high-voltage winding of the transformer T1 is connected with the high-power MOS tube Q3. The charging and discharging time represents the time width of the pulse, the output secondary of the transformer T1 is boosted to obtain the pulse level of the MOS tube Q3 driving high power, if the grounding end of the low-voltage winding of the transformer T1 is connected to +5V, the purpose of output phase inversion can be achieved, and R6 and R11 are arranged to prevent the Q1 and Q2 from generating a critical state when the states are mutually converted to form a simultaneous conduction short circuit.
In addition, the LC quasi-resonant circuit also comprises a plurality of auxiliary circuit modules, such as an indicating circuit module and a control chip auxiliary circuit module.
The indicating circuit comprises a Light Emitting Diode (LED) and a resistor R20, the 5V power supply end of the switching power supply module is connected with the anode of the LED, and the cathode of the LED is connected with a pin RA0 of the control chip through a resistor R20. The control chip controls the on and off of the indicator light according to the detection of the output voltage. If the circuit works normally, the indicator light flashes, and if the circuit does not work normally, the indicator light is on or off.
The control chip auxiliary circuit module comprises a capacitor C7, one end of the capacitor C7 is respectively connected with the 5V power supply end of the switch power supply module and the pin VDD of the control chip, the other end of the capacitor C7 is grounded, and the pin VSS of the control chip is grounded.
In addition, the invention also provides a working method adopting the novel LC quasi-resonant circuit, which is characterized in that: the method comprises the following steps:
(1) the control chip controls the conduction or the cut-off of the MOS tube Q3 through the isolation driving module, further controls the charging of the coil L and the discharging of the coil L to the capacitor C1, and the voltage at the output point A is changed from a zero value to a positive voltage value and then to a zero value;
(2) the isolation by diode D1 causes the voltage at output point a to change from a zero value to a negative voltage value and back to a zero value.
Specifically, the comparison circuit module comprises a comparator Z2A and a comparator Z2B, the comparison circuit module detects the voltage value of the output point A and generates a '0' or '1' signal through the comparator Z2B to be fed back to the control chip, and the control chip controls the charging time of the coil L through the received signal; the current value of the cathode of the diode D1 is detected by the comparison circuit module, a0 or 1 signal is generated by the comparator Z2A and fed back to the control chip, and the control chip judges whether the current exceeds the standard or not through the received signal control.
The invention also provides a driving method adopting the high-efficiency isolation driving circuit, the control chip respectively controls the charging and discharging of the capacitor C5 to the low-voltage winding of the transformer T1 through two paths of low-power MOS tubes Q1 and Q2, and the driving and the control of the high-voltage winding of the transformer T1 to the high-power MOS tube Q3 are realized.
Specifically, the driving method specifically includes the steps of:
(1) the control chip controls the conduction of the MOS tube Q1, the input end of the low-voltage winding of the transformer T1 is charged through the capacitor C5, and the other end of the low-voltage winding of the transformer T1 is grounded;
(2) the control chip controls the MOS tube Q1 to be cut off, and the charging is finished;
(3) the control chip controls the conduction of the MOS tube Q2, the capacitor C5 discharges the input end of the low-voltage winding of the transformer T1, and the S pole of the MOS tube Q2 is grounded;
(4) the control chip controls the MOS tube Q2 to cut off, and the discharge is finished.
In conclusion, the invention has the following beneficial effects: a
(1) Utilize comparison circuit module real-time collection LC quasi-resonant circuit's output voltage value and current value, control chip control MOS pipe Q3 switch on and end, realize the little closed-loop control management that coil L voltage and electric current are big, avoid under the condition that the load becomes light, output voltage grow suddenly, and then lead to burning out resonant circuit.
(2) The diode D1 for isolating the negative voltage is connected in series on the S electrode of the MOS tube Q3, so that the problem of Miller capacitance discharge of the MOS tube is solved.
(3) Only one level is used, and the two paths of TTL levels are directly used for controlling the two paths of MOS tubes by using the low-power MOS tubes, so that the isolation transformer is controlled. The transformer adopts the turn ratio of boosting to realize the conversion of the level, thereby achieving the purpose of driving the high-power MOS tube.
Finally, it is pointed out that the high-efficiency isolation driving circuit of the invention is applied to a novel LC quasi-resonant circuit, the voltage and current of the novel LC quasi-resonant circuit are controllable, the importance of the controllable voltage is also reflected on the electromagnetic ring, the electromagnetic ring is controlled by the resonance circuit to generate magnetic flux, the magnetic flux of the electromagnetic ring is determined by the current led into the magnetic ring coil, the electromagnetic ring can magnetize water to form magnetized water, the magnetized water has the functions of rust prevention, rust removal, scale prevention, scale removal, sterilization, algae removal, and the like, and is particularly applied to the field of pipelines, the descaling treatment of the water pipe needs to separate water molecule groups flowing through the water pipe, the water molecule groups have the same polarity direction with the water pipe, and the water molecule groups can be effective only by the action of controllable voltage, the physical method is used for descaling and removing rust, the defects of environmental pollution and the like caused by a chemical method are avoided, and the cost is obviously reduced.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications, combinations and variations may be made by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (10)
1. An efficient isolation drive circuit, comprising: the power supply system comprises a switching power supply module, a control chip and an isolation driving module, wherein the switching power supply module comprises a power supply end, the switching power supply module supplies power to the control chip and the isolation driving module through the power supply end, and the isolation driving module comprises a low-power MOS tube Q1, a low-power MOS tube Q2, a capacitor C5 and a transformer T1;
the control chip enables the capacitor C5 to charge the low-voltage winding of the transformer T1 by controlling the MOS tube Q1, the control chip enables the capacitor C5 to discharge the low-voltage winding of the transformer T1 by controlling the MOS tube Q2, and the high-voltage winding of the transformer T1 is connected with the high-power MOS tube Q3.
2. The high efficiency isolated driver circuit of claim 1, wherein: the power supply end is a 5V power supply end.
3. The high efficiency isolated driver circuit of claim 1, wherein: the MOS tube Q1 is AO3400, the MOS tube Q2 is AO3401, and the MOS tube Q3 is 9N 150.
4. The high efficiency isolated driver circuit of claim 1, wherein: the isolation driving module comprises a first driving unit and a second driving unit, and the control chip controls the charging and discharging of the capacitor C5 to the low-voltage winding of the transformer T1 through the first driving unit and the second driving unit respectively.
5. The high efficiency isolated driver circuit of claim 4, wherein: the input and the control chip of first drive unit are connected, first drive unit includes resistance R18, resistance R19 and MOS pipe Q1, control chip's pin RA5 passes through resistance R19 and is connected with MOS pipe Q1's grid, and switching power supply module's feed end passes through resistance R18 and is connected with MOS pipe Q1's grid, and switching power supply module's feed end is connected with MOS pipe Q1's drain electrode, and MOS pipe Q1's source is connected with electric capacity C5's input, and electric capacity C5's output is connected with the input of low voltage winding.
6. The high efficiency isolated driver circuit of claim 5, wherein: the first driving unit further comprises a resistor R6, and the source of the MOS transistor Q1 is connected with the input end of a capacitor C5 through a resistor R6.
7. The high efficiency isolated driver circuit of claim 4, wherein: the second driving unit comprises a resistor R17, a resistor R1 and a MOS transistor Q2, a pin RA1 of the control chip is connected with a grid electrode of the MOS transistor Q2 through a resistor R17, a grid electrode of the MOS transistor Q2 is grounded through a resistor R1, a drain electrode of the MOS transistor Q2 is grounded, and a source electrode of the MOS transistor Q2 is connected with an input end of a capacitor C5.
8. The high efficiency isolated driver circuit of claim 7, wherein: the second driving unit further comprises a resistor R11, and the source of the MOS transistor Q2 is connected with the input end of the capacitor C5 through a resistor R11.
9. A driving method using the high efficiency isolated driver circuit of claim 1, wherein: the control chip respectively controls the charging and discharging of the capacitor C5 to the low-voltage winding of the transformer T1 through two paths of low-power MOS transistors Q1 and Q2, and the driving and the control of the high-voltage winding of the transformer T1 to the high-power MOS transistor Q3 are achieved.
10. The driving method according to claim 9, characterized in that: the method comprises the following steps:
(1) the control chip controls the conduction of the MOS tube Q1, the input end of the low-voltage winding of the transformer T1 is charged through the capacitor C5, and the other end of the low-voltage winding of the transformer T1 is grounded;
(2) the control chip controls the MOS tube Q1 to be cut off, and the charging is finished;
(3) the control chip controls the conduction of the MOS tube Q2, the capacitor C5 discharges the input end of the low-voltage winding of the transformer T1, and the S pole of the MOS tube Q2 is grounded;
(4) the control chip controls the MOS tube Q2 to cut off, and the discharge is finished.
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| CN202010680356.XA CN111740570A (en) | 2020-07-15 | 2020-07-15 | Efficient isolation driving circuit and driving method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010680356.XA CN111740570A (en) | 2020-07-15 | 2020-07-15 | Efficient isolation driving circuit and driving method |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010193649A (en) * | 2009-02-19 | 2010-09-02 | Fuji Electric Systems Co Ltd | Semiconductor switching element driving circuit |
| CN108063542A (en) * | 2018-01-12 | 2018-05-22 | 湖南工程学院 | A kind of simple and reliable inexpensive silicon carbide power switching device driving circuit |
| CN207995054U (en) * | 2018-01-22 | 2018-10-19 | 许继电源有限公司 | A kind of silicon carbide mos pipe Drive Protecting Circuit |
| CN208299680U (en) * | 2018-06-29 | 2018-12-28 | 深圳盛方科技有限公司 | A kind of driving circuit for high voltage charging power supply inversion circuit main switch IGBT |
| CN110445391A (en) * | 2019-07-29 | 2019-11-12 | 深圳开沃汽车有限公司 | A kind of novel electric automobile motor controller IGBT driving power circuit |
| CN110943499A (en) * | 2018-09-25 | 2020-03-31 | 胡春生 | Novel energy storage circuit |
-
2020
- 2020-07-15 CN CN202010680356.XA patent/CN111740570A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010193649A (en) * | 2009-02-19 | 2010-09-02 | Fuji Electric Systems Co Ltd | Semiconductor switching element driving circuit |
| CN108063542A (en) * | 2018-01-12 | 2018-05-22 | 湖南工程学院 | A kind of simple and reliable inexpensive silicon carbide power switching device driving circuit |
| CN207995054U (en) * | 2018-01-22 | 2018-10-19 | 许继电源有限公司 | A kind of silicon carbide mos pipe Drive Protecting Circuit |
| CN208299680U (en) * | 2018-06-29 | 2018-12-28 | 深圳盛方科技有限公司 | A kind of driving circuit for high voltage charging power supply inversion circuit main switch IGBT |
| CN110943499A (en) * | 2018-09-25 | 2020-03-31 | 胡春生 | Novel energy storage circuit |
| CN110445391A (en) * | 2019-07-29 | 2019-11-12 | 深圳开沃汽车有限公司 | A kind of novel electric automobile motor controller IGBT driving power circuit |
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