CN207753293U - A kind of parallel laser driving circuit - Google Patents
A kind of parallel laser driving circuit Download PDFInfo
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- CN207753293U CN207753293U CN201721644888.8U CN201721644888U CN207753293U CN 207753293 U CN207753293 U CN 207753293U CN 201721644888 U CN201721644888 U CN 201721644888U CN 207753293 U CN207753293 U CN 207753293U
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Abstract
The utility model discloses a kind of parallel laser driving circuit, belong to semiconductor laser actuation techniques field.Its component part includes：The multichannel charging and discharging circuit that discharge switching circuit, the storage capacitor that nanosecond control pulse, adjustable high voltage power supply, avalanche transistor driving circuit, a laser diode, multiple power field effect transistors and multiple avalanche transistors are composed in series form；Nanosecond control pulsed drive avalanche transistor opens shutdown to carry out the transmitting of laser；Metal-oxide-semiconductor conducting flows each circuit by temperature characterisitic.The utility model overcomes the limitation that simple avalanche transistor parallel connection can not flow, partial pressure metering function of the discharge loop Jing Guo field-effect tube makes system discharge voltage be improved, and so that discharge current increases, to effectively raise the driving capability of noise spectra of semiconductor lasers after the discharge switching circuit parallel current-sharing of multiple field-effect tube concatenation avalanche transistors.
Description
Technical field
The utility model belongs to semiconductor laser actuation techniques field, and in particular to a kind of parallel laser driving electricity
Road.
Background technology
In recent years, impulse semiconductor laser is widely used in laser ranging field.It works in short pulse
On the one hand semiconductor laser under pattern needs very high pressure to generate big peak point current to drive laser tube to generate big hair
Luminous power, on the other hand, for this big peak point current again no more than the tolerance range of switching device, this is many conventional semiconductors
The requirement that laser driving circuit is unable to reach.
A kind of equal-current synthetic high-power constant current power supply circuit, the master of this circuit are described in CN201010270086A
It is to be flowed the temperature characterisitic of metal-oxide-semiconductor to each driving circuit to act on, and constant power supply is exported, although having used MOS
Pipe parallel current-sharing form, but only there are one metal-oxide-semiconductors to drive for each circuit, regards derailing switch without cascade triode
Part is had any different in principle.
A kind of series circuit of power switch device is introduced in CN200910046491A, its cardinal principle is to utilize metal-oxide-semiconductor
Temperature characterisitic and the constant principle of capacitance voltage the power supply of entire circuit is pressed, to improve entire power switch electricity
The voltage endurance capability on road, although it also uses the circuit structure of two switching device cascades, what it was mainly utilized is
The devices such as switching device and other capacitance resistances are pressed, and this patent is flowed using the temperature characterisitic of metal-oxide-semiconductor,
And using the circuit structure of parallel form.
Using the laser driving circuit that this switching device is parallel, on the one hand divided by field-effect tube and snowslide pipe
Pressure energy improves the threshold value of high pressure and on the other hand further through the form that circuit in parallel flows total physical efficiency of discharge loop is born
Peak point current become larger, to promote the driving capability of circuit.The circuit combined using the two characteristic has been provided simultaneously with the two
Feature is suitble to the raising of Laser Driven ability.
Utility model content
The purpose of this utility model is to provide a kind of parallel laser driving circuit.
The utility model uses avalanche transistor as high-current switch device, and use power field effect transistor as
Current equalizer part, it is the continuously adjustable conducting electric currents of 10A to 40A to provide the conducting rising edge of 1.5ns and peak value.Programmable nanosecond arteries and veins
Punching drives the same laser tube by multichannel avalanche transistor, and multichannel is realized on circuit by power field effect transistor
Flow.
A kind of parallel laser driving circuit provided by the utility model, including：Programmable nanosecond control pulse, can
Voltage source, avalanche transistor driving circuit, laser diode, discharge switching circuit, multichannel charging and discharging circuit is turned up, feature exists
In,
The avalanche transistor driving circuit is by N number of power field effect transistor, avalanche transistor, RC resistance capacitance groups
At wherein N number of power field effect transistor Q1、Q2、…、QNDrain respectively with respective avalanche transistor D1、D2、…、DN's
Emitter is connected, and source electrode connects the cathode of storage capacitor, and grid meets the driving Continuity signal Von of microcontroller generation, for making metal-oxide-semiconductor
In long logical state；
The programmable nanosecond controls pulse, the base stage of the avalanche transistor is connected to, for inputting the roads N snowslide three
Pole pipe driving circuit driving pulse；
The multichannel charging and discharging circuit by the first charging and discharging circuit (3), the second charging and discharging circuit (2) ... and roads N
Charging and discharging circuit collectively constitutes a storage capacitor；
The storage capacitor composition charge circuit and N number of discharge loop, N number of discharge loop is by C1……DNShape in parallel
Formula forms, and the value of N is >=2 natural number, the electric current for improving electric discharge；Wherein storage capacitor C1Anode connection laser two
The cathode of the anode of pole pipe, laser tube connects the collector of avalanche transistor, the charge and discharge for carrying out laser；
The discharge switching circuit is by adjustable high voltage power supply (being inputted by the external world), a laser diode DL, N number of power field
Effect transistor and avalanche transistor are composed in series, in each discharge switch circuit, metal-oxide-semiconductor and the avalanche transistor string
Connection, the charge and discharge for carrying out laser tube jointly.
RC resistance capacitances described in the avalanche transistor driving circuit with go here and there and combining form connect with circuit, jointly it is right
Discharge process carries out the control of size of current and the velocity of discharge.
The metal-oxide-semiconductor Q1 connects with the avalanche transistor D1, shines for generating instantaneous large-current driving laser tube,
It is the RC resistance capacitances between the metal-oxide-semiconductor and the avalanche transistor, the value of RC is adjusted, can completes to electric discharge
The adjusting of electric current, the metal-oxide-semiconductor Q1、Q2、…、QNThen each circuit is flowed using its thermal characteristics.
In second charging and discharging circuit (2), the base in single metal-oxide-semiconductor cascade triode form laser discharge circuit
On plinth, N number of identical laser discharge circuit can be carried out in parallel.
Adjustable metal-oxide-semiconductor gate drive signal Von described in the avalanche transistor driving circuit is generated by microcontroller,
And it is branched off into multichannel, per being coupled with all the way on the grid of N number of metal-oxide-semiconductor, output high level is in by metal-oxide-semiconductor and leads always always
Logical state.
The programmable nanosecond control pulse is generated by microcontroller, and branch is connected respectively to avalanche transistor as the roads N
Base stage, for the roads N avalanche transistor provide nanosecond turn-on time.
Technical solution advantage used in the utility model is as follows：
(1) the utility model is overcome the simple laser tube driving high pressure brought using avalanche transistor and is limited by triode
The shortcomings that processed, the partial pressure metering function after being concatenated due to power field effect transistor so that the high pressure pressure resistance of single discharge loop
Value improves, so that the storage capacitor voltage of whole system improves, the voltage of capacitance storage increases, this will make circuit discharging
Electric current increases, and improves laser tube driving capability.
(2) the utility model is applied to pulsed laser ranging system, and avalanche transistor and field-effect tube can also be made to connect
Circuit afterwards is flowed, so that the discharge resistance of entire discharge loop reduces, so that discharge current increases, is improved
The driving capability of laser tube so that the range capability of laser system is improved.
Description of the drawings
Fig. 1 is the utility model specific example circuit structure diagram.
Fig. 2 is the principles of the present invention structural schematic diagram.
Fig. 3 is the utility model circuit arrangement map.
Label in Fig. 1：Q1、Q2For power field effect transistor, D1、D2For avalanche transistor, C1For charge and discharge capacitance, DL is
Semiconductor laser diode, R1,D3,C1Form charge circuit, the DL field-effect tube Qs in parallel with two respectively1、Q2With three pole of snowslide
Pipe D1、D2Form two discharge loops.The left side is that external constant voltage dc source controls field-effect tube normal open, and bottom right is snowslide three
The pulse drive signal of pole pipe controls the glow frequency of laser tube.
Specific implementation mode
Utility model is described further with reference to legend and specific implementation mode.
Fig. 1 is two pole of laser of two-way avalanche transistor concatenation power field effect transistor discharge switching circuit parallel-connection structure
The structure diagram of tube drive circuit, Q1、Q2For power field effect transistor, D1、D2For avalanche transistor, C1For charge and discharge capacitance,
DL is semiconductor laser diode, R1,D3,C1Form charge circuit, the DL field-effect tube Qs in parallel with two respectively1、Q2And snowslide
Triode D1、D2Form two discharge loops.It (is constantly in conducting shape using using the heat generation characteristic of field-effect tube (metal-oxide-semiconductor)
The metal-oxide-semiconductor of state is easy to generate heat) and positive temperature characterisitic (conducting resistance is as temperature increases and increases), control each discharge loop
Electric current keep it is identical, realization flow.The adjustable high voltage power supply of external world's input passes through diode D3Give energy storage C1Charging, capacitance fill
The high pressure at its both ends provides required avalanche breakdown voltage for each avalanche transistor after electricity.Two-way power field effect transistor
Since grid voltage is always by the driving of DC voltage (Von), conducting state is remained in circuit, is equivalent to one
The smaller resistance of internal resistance with apparent thermal characteristics.When drive pulse signal arrives, there is snowslide first in avalanche transistor
Phenomenon, discharge loop electric current increase rapidly driving laser tube and shine, due to there is electric current to flow through, once the electric current on certain road is excessive, lead
It causes parallel branch unevenness stream, power field effect pipe fever that resistance is caused to increase, reduces so as to cause the electric current on this road, force all
Branch flows, so that two-way discharge loop really obtains parallel connection so that electric discharge all-in resistance reduces, and improves driving current.
Refering to Fig. 3, circuit board the top is can laser-driven signal input terminal (6), laser-driven signal shaping unit
(6), followed by the charge circuit of laser (1) and the symmetrical discharge loop of two-way (2), (3), two snowslides are mainly contained
Triode D1、D2With field-effect tube Q1、Q2, the circuit board left side is then driving power supply terminal (Von), and it is defeated to provide DC power supply
Enter as gate drive voltage, the lower section of circuit board is then extraneous adjustable high pressure input terminal (Vh).In circuit-board laying-out to the greatest extent
Amount ensures that the cabling of charging and discharging circuit is short as possible, and energy large area spreads copper, reduces loop length.
The utility model has been used in the new generation product of company, the work frequency of charging and discharging circuit when normal work
Rate is 100KHZ, and driving pulsewidth is 5ns, avalanche transistor model PZT2222A, and metal-oxide-semiconductor is selected as FDD86250, charge and discharge
Capacitance C1Value 50-500pF, current-limiting resistance R1It is general to take the Europe 100-500, between the value of Von generally takes 5-15V, Vh high pressure values
To be less than 150V.Under equal conditions, the electric discharge for power field effect pipe being concatenated using the avalanche transistor in the utility model is opened
Loop structure progress two-way parallel discharge is closed to improve than the original simple driving current for using avalanche transistor to discharge
About 30%.If increasing the value of input high pressure (Vh), or the other avalanche transistor concatenations of additional addition on the original basis
The parallel discharge circuit of field-effect transistor, under conditions of circuit rated value allows, driving current can be promoted further.
Above-described embodiment is only a most simple scheme of the utility model, is not limited to the essence of the utility model
Technology contents range, the substantial technological content of the utility model is broadly to be defined in the right of application, any
The technology entities or method that other people complete, it is also or a kind of if identical with defined in the right of application
Equivalent change will be considered as being covered by among the right.
Claims (6)
1. a kind of parallel laser driving circuit, including：Programmable nanosecond control pulse, adjustable high voltage power supply, snowslide three
Pole pipe driving circuit, laser diode, discharge switching circuit, multichannel charging and discharging circuit, which is characterized in that
The avalanche transistor driving circuit is made of N number of power field effect transistor, avalanche transistor, RC resistance capacitances,
In N number of power field effect transistor Q1、Q2、…、QNDrain respectively with respective avalanche transistor D1、D2、…、DNEmitter
It is connected, source electrode connects the cathode of storage capacitor, and grid meets the driving Continuity signal Von of microcontroller generation, for making metal-oxide-semiconductor be in length
Logical state；
The programmable nanosecond controls pulse, the base stage of the avalanche transistor is connected to, for inputting the roads N avalanche transistor
Driving circuit driving pulse；
The multichannel charging and discharging circuit by the first charging and discharging circuit (3), the second charging and discharging circuit (2) ... and the roads N charge and discharge
Electrical circuit collectively constitutes a storage capacitor；
The storage capacitor composition charge circuit and N number of discharge loop, N number of discharge loop is by C1……DNParallel form group
At the value of N is >=2 natural number, the electric current for improving electric discharge；Wherein storage capacitor C1Anode connection laser diode
Anode, the cathode of laser tube connects the collector of avalanche transistor, the charge and discharge for carrying out laser；
The discharge switching circuit is by adjustable high voltage power supply, the laser diode D from external world's inputL, N number of power field effect
Transistor and avalanche transistor are composed in series, and in each discharge switch circuit, metal-oxide-semiconductor and avalanche transistor series connection are used
In the charge and discharge for carrying out laser tube jointly.
2. a kind of parallel laser driving circuit according to claim 1, which is characterized in that the avalanche transistor drives
RC resistance capacitances described in dynamic circuit to go here and there and combining form connect with circuit, jointly to discharge process progress size of current with put
The control of electric speed.
3. a kind of parallel laser driving circuit according to claim 1, which is characterized in that first charge and discharge are returned
In road (3), the metal-oxide-semiconductor Q1 connects with the avalanche transistor D1, shines for generating instantaneous large-current driving laser tube,
It is the RC resistance capacitances between the metal-oxide-semiconductor and the avalanche transistor, the value of RC is adjusted, can completes to electric discharge
The adjusting of electric current, the metal-oxide-semiconductor Q1、Q2、…、QNThen each circuit is flowed using its thermal characteristics.
4. a kind of parallel laser driving circuit according to claim 1, which is characterized in that second charge and discharge are returned
It, can be by N number of identical laser on the basis of single metal-oxide-semiconductor cascade triode form laser discharge circuit in road (2)
Discharge loop carries out in parallel.
5. a kind of parallel laser driving circuit according to claim 1, which is characterized in that the avalanche transistor drives
Adjustable metal-oxide-semiconductor gate drive signal Von is generated by microcontroller described in dynamic circuit, and is branched off into multichannel, every to divide all the way
It is not connected on the grid of N number of metal-oxide-semiconductor, it is in the conduction state always by metal-oxide-semiconductor to export high level always.
6. a kind of parallel laser driving circuit according to claim 1, which is characterized in that the programmable nanosecond
Control pulse is generated by microcontroller, and branch becomes the base stage that the roads N are connected respectively to avalanche transistor, is carried for the roads N avalanche transistor
For nanosecond turn-on time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721644888.8U CN207753293U (en) | 2017-11-29 | 2017-11-29 | A kind of parallel laser driving circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721644888.8U CN207753293U (en) | 2017-11-29 | 2017-11-29 | A kind of parallel laser driving circuit |
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| CN207753293U true CN207753293U (en) | 2018-08-21 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110459955A (en) * | 2019-07-23 | 2019-11-15 | 天津大学 | A kind of semiconductor laser device driving circuit of high high-power Gao Zhongying |
| WO2020182132A1 (en) * | 2019-03-14 | 2020-09-17 | 深圳市镭神智能系统有限公司 | Laser device driving circuit and driving method, and laser radar system |
| CN112213733A (en) * | 2020-12-03 | 2021-01-12 | 深圳市海创光学有限公司 | Synchronous voltage-controlled adjustable pulse generating circuit and fiber laser |
| CN112865759A (en) * | 2021-01-19 | 2021-05-28 | 中国电子科技集团公司第二十九研究所 | Time domain high-stability ultra-wide spectrum pulse source |
| WO2021138774A1 (en) * | 2020-01-06 | 2021-07-15 | 深圳市大疆创新科技有限公司 | Multi-line laser module, laser radar, and movable platform |
| CN113162020A (en) * | 2021-04-20 | 2021-07-23 | 核工业西南物理研究院 | Current equalizing circuit structure with a large number of capacitors connected in parallel and power supply of ball-and-socket device |
-
2017
- 2017-11-29 CN CN201721644888.8U patent/CN207753293U/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020182132A1 (en) * | 2019-03-14 | 2020-09-17 | 深圳市镭神智能系统有限公司 | Laser device driving circuit and driving method, and laser radar system |
| CN110459955A (en) * | 2019-07-23 | 2019-11-15 | 天津大学 | A kind of semiconductor laser device driving circuit of high high-power Gao Zhongying |
| WO2021138774A1 (en) * | 2020-01-06 | 2021-07-15 | 深圳市大疆创新科技有限公司 | Multi-line laser module, laser radar, and movable platform |
| CN112213733A (en) * | 2020-12-03 | 2021-01-12 | 深圳市海创光学有限公司 | Synchronous voltage-controlled adjustable pulse generating circuit and fiber laser |
| CN112865759A (en) * | 2021-01-19 | 2021-05-28 | 中国电子科技集团公司第二十九研究所 | Time domain high-stability ultra-wide spectrum pulse source |
| CN112865759B (en) * | 2021-01-19 | 2022-06-07 | 中国电子科技集团公司第二十九研究所 | Time domain high-stability ultra-wide spectrum pulse source |
| CN113162020A (en) * | 2021-04-20 | 2021-07-23 | 核工业西南物理研究院 | Current equalizing circuit structure with a large number of capacitors connected in parallel and power supply of ball-and-socket device |
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