CN201656951U - Insulated gate bipolar translator drive circuit - Google Patents
Insulated gate bipolar translator drive circuit Download PDFInfo
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- CN201656951U CN201656951U CN2009201358437U CN200920135843U CN201656951U CN 201656951 U CN201656951 U CN 201656951U CN 2009201358437 U CN2009201358437 U CN 2009201358437U CN 200920135843 U CN200920135843 U CN 200920135843U CN 201656951 U CN201656951 U CN 201656951U
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- brachium pontis
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- 230000003287 optical effect Effects 0.000 claims abstract description 22
- 238000009413 insulation Methods 0.000 claims description 14
- 238000002955 isolation Methods 0.000 claims description 13
- 230000003321 amplification Effects 0.000 claims description 7
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 7
- 238000012360 testing method Methods 0.000 claims description 4
- 238000013461 design Methods 0.000 description 6
- 230000001105 regulatory effect Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 210000000481 breast Anatomy 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000007600 charging Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
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Abstract
The utility model relates to an insulated gate bipolar translator drive circuit which includes a drive isolated circuit, and an amplifier output circuit. The drive isolated circuit implements driving and isolating by adopting a PC929 gate pole drive optical coupler which receives a signal outputted by a pulse width modulation signal input circuit and is electrically connected with the amplifier output circuit. As the PC929 gate pole drive optical coupler is adopted to implement driving and isolating, the insulated gate bipolar translator drive circuit has high input and output isolated voltages. Undervoltage locking protection, failure memory circuit, dead zone setting circuit, turn-off delay, fuctuation bridge interlock circuit, drive amplifier circuit, and switching power supply circuit are implemented by designing simple circuits. The utility model is a drive circuit with low cost and high reliability.
Description
Technical field
The utility model relates to a kind of insulation gate pole bipolar transistor driving circuit, relates in particular to a kind of insulation gate pole bipolar transistor driving circuit that has protective circuit and switch voltage-stabilizing.
Background technology
The drive condition of insulation gate pole bipolar transistor (Isolated Gate Bipolar Transistor is called for short IGBT) is related to his static characteristic and dynamic characteristic nearly, simultaneously, the size of the positive bias+Ugs of gate pole circuit, back bias voltage-Ugs and gate electrode resistance RG is on state voltage, switch, the switching loss of IGBT, bear parameters such as short-circuit capacity and electric current in various degree influence is arranged.Wherein the variation of gate pole positive voltage+Ugs is to the characteristic of opening of IGBT, and load short circuits ability and dUgs/dt electric current have bigger influence, and the gate pole back bias voltage is bigger to the influence of turn-off characteristic.
In the technology, be the reliable insulated gate device that drives, existing at present a lot of ripe circuit now.When drive signal and power device did not need to isolate, the design of drive circuit was fairly simple.When input that needs driver and output electrical isolation, two kinds of approach are arranged generally: adopt photoelectrical coupler or utilize pulse transformer that electrical isolation is provided.In the prior art, the input of driver and output electrical isolation, its open and close are short disconnected time of delay, and the input and output isolation voltage is also lower, and simultaneously, the circuit protection reliability is low, and relevant auxiliary circuit design is complicated, cost is high.
The utility model content
The technical problem that the utility model solves is: the input and the output electrical isolation that overcome driver in the prior art; its open and close are short disconnected time of delay; the input and output isolation voltage is also lower; simultaneously; the circuit protection reliability is low, the technical problem that relevant auxiliary circuit design is complicated, cost is high.
The technical scheme that the utility model is taked is: make up a kind of IGBT drive circuit, drive buffer circuit, amplification output circuit, described driving buffer circuit drives isolation by PC929 gate-drive optical coupler, described PC929 gate-drive optical coupler receives the signal of described pulse width modulating signal input circuit output, and described PC929 gate-drive optical coupler is connected with amplification output circuit.
The further technical scheme of the utility model technical solution problem is: also comprise the first brachium pontis drive circuit, the second brachium pontis drive circuit, the described first brachium pontis drive circuit is connected with PC929 gate-drive optical coupler respectively with the described second brachium pontis drive circuit, when the described first brachium pontis drive circuit is high level work, the described second brachium pontis drive circuit is a low level, when the described second brachium pontis drive circuit is high level work, the described first brachium pontis drive circuit is a low level, forms interlocking.
The further technical scheme of the utility model technical solution problem is: also comprise under-voltage protecting circuit, described under-voltage protecting circuit comprises the triode of two 2N5551.
The further technical scheme of the utility model technical solution problem is: also comprise the fault memory circuit, described fault memory circuit comprises NAND gate, optocoupler, double D trigger, described NAND gate input be connected with described PC929 gate-drive optical coupler by optocoupler, the NAND gate output is connected with double D trigger and exports digital signal processor to by optocoupler.
The further technical scheme of the utility model technical solution problem is: described NAND gate is CD4023, and described optocoupler is TLP251, and described double D trigger is CD4013.
The further technical scheme of the utility model technical solution problem is: also comprise the The dead time circuit, described The dead time circuit comprises and door, resistance and electric capacity that described and door two inputs are connected on the resistance two ends respectively.
The further technical scheme of the utility model technical solution problem is: also comprise switch off delay circuit, described turn-off time delay circuit comprises triode, resistance, electric capacity.
The further technical scheme of the utility model technical solution problem is: also comprise the driving amplifying circuit, described driving amplifying circuit comprises speed-sensitive switch triode, electric capacity, diode, two diodes of described transistor collector testing circuit series connection.
The further technical scheme of the utility model technical solution problem is: also comprise switching power circuit, described switching power circuit comprises chip for driving, optocoupler, the accurate source of stable pressure of three end groups, described Switching Power Supply drives with chip for driving, and optocoupler, the accurate source of stable pressure of three end groups carry out isolated feedback.
The further technical scheme of the utility model technical solution problem is: described chip for driving is 3844, and described optocoupler is PC817, and the accurate source of stable pressure of described three end groups is TL431.
The technique effect of technical solutions of the utility model technical solution problem is: drive isolation by adopting PC929 gate-drive optical coupler, its open and close are short disconnected time of delay, input and output isolation voltage height.The practical under-voltage locking protection of circuit by simplicity of design, fault memory circuit, The dead time circuit, switch off delay circuit, bridge interlock circuit, driving amplifying circuit, switching power circuit up and down provide the drive circuit that cost is low, system is simple, reliability is high.
Description of drawings
Fig. 1 is a connection diagram of the present utility model.
Fig. 2 is the interior view of the utility model PC929 gate-drive optical coupler.
Fig. 3 is a bridge arm circuit on the utility model.
Fig. 4 is the utility model under-voltage protecting circuit.
Fig. 5 is the utility model fault memory circuit.
Fig. 6 is the utility model The dead time circuit.
Fig. 7 is the utility model switch off delay circuit.
Fig. 8 drives amplifying circuit for the utility model.
Fig. 9 is the utility model switching power circuit.
The connection diagram of Figure 10 the utility model and auxiliary circuit thereof.
Embodiment
Below in conjunction with specific embodiment technical solutions of the utility model are further specified:
As Fig. 1, shown in Figure 10, the utility model makes up a kind of IGBT drive circuit, drive buffer circuit, amplification output circuit, described driving buffer circuit drives isolation by PC929 gate-drive optical coupler, described PC929 gate-drive optical coupler receives the signal of described pulse width modulating signal input circuit output, and described PC929 gate-drive optical coupler is connected with amplification output circuit.Described pwm signal input circuit is transferred to the driving buffer circuit with its pwm signal, and promptly PC929 gate-drive optical coupler is exported through amplification output circuit again.
As shown in Figure 2; described PC929 gate-drive optical coupler inside is provided with over-current detection; when its 9 pin detects the IGBT over-current signal; then its 8 pin collector electrode is exported fault-signal; 11 pin output low levels; and turn-off IGBT, and can regulate overcurrent protection voltage by regulating R18, R90, the turn-off time of PC929 is set by adjusting R18, C5 size.The opening of described PC929 gate-drive optical coupler, the maximum 500nS of turn-off delay time, the input and output isolation voltage is AC4000V.
As shown in Figure 3, the utility model also comprises the first brachium pontis drive circuit, the second brachium pontis drive circuit, the described first brachium pontis drive circuit is connected with PC929 gate-drive optical coupler respectively with the described second brachium pontis drive circuit, when the described first brachium pontis drive circuit is high level work, the described second brachium pontis drive circuit is a low level, when the described second brachium pontis drive circuit was high level work, the described first brachium pontis drive circuit was a low level, formed interlocking.This circuit has been avoided the straight-through of first brachium pontis and second brachium pontis, has protected IGBT, and simultaneously, this circuit performance is stable, cost is low.
As shown in Figure 4, the utility model also adopts under-voltage protecting circuit, and described under-voltage protecting circuit comprises the triode of two 2N5551, the triode of 2N5551, the maximum 0.2V of the saturation conduction pressure drop of its C, the E utmost point, during this circuit working, when voltage during greater than 12.7V, then Z3 punctures, the Q7 conducting, Q8 turn-offs, and this end is a high level, and driver is open-minded; When voltage during less than 12V, Q8 conducting, this end is a low level, and driver turn-offs; Simultaneously, this circuit also has electrification reset function, simplicity of design, practicality.
As shown in Figure 5, the utility model also comprises the fault memory circuit, described fault memory circuit comprises NAND gate, optocoupler, double D trigger, described NAND gate input be connected with described PC929 gate-drive optical coupler by optocoupler (high speed photo coupling), the NAND gate output is connected with double D trigger and exports digital signal processor to by optocoupler.Described NAND gate is CD4023, and described optocoupler is TLP251, and described double D trigger is CD4013.When operation, as long as being CD4023 any a road, NAND gate detects faulty circuit just to double D trigger CD4013, the metal-oxide-semiconductor conducting, with the input of door CD4081 be low level, then 1 of PC929,3 pin conductings, 11 pin of PC929 are low level, make IGBT be in off state all the time, and fault-signal exports digital signal processor (Digital Signal Processing to by optocoupler TLP251, be called for short DSP), turn-off PWM, arrive up to reset signal RESET, could allow the PC929 operate as normal, guarantee the reliability that IGBT turn-offs like this.
As shown in Figure 6, the utility model also adopts the The dead time circuit, and described The dead time circuit comprises and door, resistance and electric capacity that described and door two inputs are connected on the resistance two ends respectively.This circuit can the regulated at will Dead Time by resistance sizes or capacitance size, and when input PWM, when being high level, by τ=RC time constant, when with 6 pin voltage chargings of door 4081 during greater than 5V, 4081 just export high level; When being low level, with 5 pin of door 4081 be low, output also is low level, this circuit is convenient and simple, dependable performance.
As shown in Figure 7, the utility model also adopts switch off delay circuit, and described circuit comprises triode, resistance and electric capacity, and this circuit can the regulated at will turn-off delay time by regulating resistance sizes or capacitance size, dependable performance.
As shown in Figure 8, the utility model also adopts the driving amplifying circuit, and described driving amplifying circuit comprises speed-sensitive switch triode, electric capacity, diode, two diodes of described transistor collector testing circuit series connection.Described triode is D44VH and D45VH, and the rising of described triode and fall delay time are 90nS to the maximum.Over-current detection circuit is received the PC929 pin by R18, and when the saturation voltage drop that detects IGBT during to 7V, PC929 exports fault-signal, and PC929 turn-offs pwm signal, and synchronous signal is passed to the fault memory circuit, passes to DSP then, turn-offs PWM fully; The use of capacitor C 5 and diode Z7, help to suppress to disturb, connect with two diodes at the collector electrode testing circuit, can improve overall oppositely withstand voltage, thereby can improve drive voltage level, but the reverse recovery time of diode is very little, and each reverse voltage withstand class to be 1000V, the general BYV261E that adopts, reflection 75ns recovery time; Gate driving resistance can be determined size according to the capacity of IGBT.
As shown in Figure 9, the utility model also adopts switching power circuit, and described switching power circuit comprises chip for driving, optocoupler, the accurate source of stable pressure of three end groups, and described Switching Power Supply drives with chip for driving, and optocoupler, the accurate source of stable pressure of three end groups carry out isolated feedback.Described chip for driving is 3844, and described optocoupler is PC817, and the accurate source of stable pressure of described three end groups is TL431.The lasting accuracy height of this circuit stabilized voltage power supply, reliable operation has realized the electrical isolation of control circuit and main circuit fully.
Above content be in conjunction with concrete preferred implementation to further describing that the utility model is done, can not assert that concrete enforcement of the present utility model is confined to these explanations.For the utility model person of an ordinary skill in the technical field, under the prerequisite that does not break away from the utility model design, can also make some simple deduction or replace, all should be considered as belonging to protection range of the present utility model.
Claims (10)
1. insulation gate pole bipolar transistor driving circuit, comprise and drive buffer circuit, amplification output circuit, it is characterized in that, described driving buffer circuit drives isolation by PC929 gate-drive optical coupler, described PC929 gate-drive optical coupler receives the signal of described pulse width modulating signal input circuit output, and described PC929 gate-drive optical coupler is connected with amplification output circuit.
2. insulation gate pole bipolar transistor driving circuit according to claim 1, it is characterized in that, also comprise the first brachium pontis drive circuit, the second brachium pontis drive circuit, the described first brachium pontis drive circuit is connected with PC929 gate-drive optical coupler respectively with the described second brachium pontis drive circuit, when the described first brachium pontis drive circuit is high level work, the described second brachium pontis drive circuit is a low level, when the described second brachium pontis drive circuit is high level work, the described first brachium pontis drive circuit is a low level, forms interlocking.
3. insulation gate pole bipolar transistor driving circuit according to claim 1 is characterized in that also comprise under-voltage protecting circuit, described under-voltage protecting circuit comprises the triode of two 2N5551.
4. insulation gate pole bipolar transistor driving circuit according to claim 1, it is characterized in that, also comprise the fault memory circuit, described fault memory circuit comprises NAND gate, optocoupler, double D trigger, described NAND gate input be connected with described PC929 gate-drive optical coupler by optocoupler, the NAND gate output is connected with double D trigger and exports digital signal processor to by optocoupler.
5. insulation gate pole bipolar transistor driving circuit according to claim 4 is characterized in that described NAND gate is CD4023, and described optocoupler is TLP251, and described double D trigger is CD4013.
6. insulation gate pole bipolar transistor driving circuit according to claim 1 is characterized in that, also comprises the The dead time circuit, and described The dead time circuit comprises and door, resistance and electric capacity that described and door two inputs are connected on the resistance two ends respectively.
7. according to the described described insulation gate pole bipolar transistor driving circuit of claim 1, it is characterized in that also comprise switch off delay circuit, described time delay is provided with circuit and comprises triode, resistance, electric capacity.
8. insulation gate pole bipolar transistor driving circuit according to claim 1, it is characterized in that, also comprise the driving amplifying circuit, described driving amplifying circuit comprises speed-sensitive switch triode, electric capacity, diode, and described transistor collector testing circuit is connected with two diodes.
9. insulation gate pole bipolar transistor driving circuit according to claim 1, it is characterized in that, also comprise switching power circuit, described switching power circuit comprises chip for driving, optocoupler, the accurate source of stable pressure of three end groups, described Switching Power Supply drives with chip for driving, and optocoupler, the accurate source of stable pressure of three end groups carry out isolated feedback.
10. insulation gate pole bipolar transistor driving circuit according to claim 9 is characterized in that described chip for driving is 3844, and described optocoupler is PC817, and the accurate source of stable pressure of described three end groups is TL431.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201358437U CN201656951U (en) | 2009-03-24 | 2009-03-24 | Insulated gate bipolar translator drive circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201358437U CN201656951U (en) | 2009-03-24 | 2009-03-24 | Insulated gate bipolar translator drive circuit |
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| CN201656951U true CN201656951U (en) | 2010-11-24 |
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| CN2009201358437U Expired - Fee Related CN201656951U (en) | 2009-03-24 | 2009-03-24 | Insulated gate bipolar translator drive circuit |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102324918A (en) * | 2011-06-09 | 2012-01-18 | 深圳市英威腾电气股份有限公司 | A kind of bipolar transistor driving circuit of insulated gate |
| CN103441750A (en) * | 2013-07-30 | 2013-12-11 | 深圳市天微电子有限公司 | High-low voltage area signal transmission system |
| CN103490602A (en) * | 2013-08-22 | 2014-01-01 | 深圳市伟创电气有限公司 | Restraining circuit for VCE oscillating voltage in IGBT bridge arm short circuit |
| CN104660245A (en) * | 2015-02-05 | 2015-05-27 | 昆明理工大学 | Ultra-high driving module circuit as well as constructive method and design method thereof |
| CN105591638A (en) * | 2016-03-16 | 2016-05-18 | 阳光电源股份有限公司 | Switching tube driving circuit |
| CN107733409A (en) * | 2017-10-27 | 2018-02-23 | 南京轨道交通系统工程有限公司 | A kind of high-power IGBT drive circuit |
| CN109450230A (en) * | 2018-10-24 | 2019-03-08 | 南京轨道交通系统工程有限公司 | A kind of IGBT gate drivers based on analog circuit |
-
2009
- 2009-03-24 CN CN2009201358437U patent/CN201656951U/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102324918A (en) * | 2011-06-09 | 2012-01-18 | 深圳市英威腾电气股份有限公司 | A kind of bipolar transistor driving circuit of insulated gate |
| CN103441750A (en) * | 2013-07-30 | 2013-12-11 | 深圳市天微电子有限公司 | High-low voltage area signal transmission system |
| CN103441750B (en) * | 2013-07-30 | 2016-09-28 | 深圳市天微电子股份有限公司 | High-low voltage area signal transmission system |
| CN103490602A (en) * | 2013-08-22 | 2014-01-01 | 深圳市伟创电气有限公司 | Restraining circuit for VCE oscillating voltage in IGBT bridge arm short circuit |
| CN103490602B (en) * | 2013-08-22 | 2016-03-30 | 深圳市伟创电气有限公司 | The suppression circuit of VCE oscillating voltage during IGBT bridgc arm short |
| CN104660245A (en) * | 2015-02-05 | 2015-05-27 | 昆明理工大学 | Ultra-high driving module circuit as well as constructive method and design method thereof |
| CN104660245B (en) * | 2015-02-05 | 2017-09-22 | 昆明理工大学 | A kind of ultrahigh speed drive module circuit and its constructive method |
| CN105591638A (en) * | 2016-03-16 | 2016-05-18 | 阳光电源股份有限公司 | Switching tube driving circuit |
| CN105591638B (en) * | 2016-03-16 | 2018-04-10 | 阳光电源股份有限公司 | A kind of switch tube driving circuit |
| CN107733409A (en) * | 2017-10-27 | 2018-02-23 | 南京轨道交通系统工程有限公司 | A kind of high-power IGBT drive circuit |
| CN107733409B (en) * | 2017-10-27 | 2020-11-10 | 南京轨道交通系统工程有限公司 | High-voltage high-power IGBT drive circuit |
| CN109450230A (en) * | 2018-10-24 | 2019-03-08 | 南京轨道交通系统工程有限公司 | A kind of IGBT gate drivers based on analog circuit |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101124 Termination date: 20130324 |