CN205847212U - A kind of IGBT drive circuit of high reliability - Google Patents
A kind of IGBT drive circuit of high reliability Download PDFInfo
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- CN205847212U CN205847212U CN201620719419.7U CN201620719419U CN205847212U CN 205847212 U CN205847212 U CN 205847212U CN 201620719419 U CN201620719419 U CN 201620719419U CN 205847212 U CN205847212 U CN 205847212U
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Abstract
The utility model discloses the IGBT drive circuit of a kind of high reliability; IGBT drive circuit includes control circuit and is driven IGBT; control circuit includes power supply circuits, voltage amplifier circuit, impulse circuit; the driving transistor base input of control circuit adds electric capacity; i.e. drive transistor base shunt capacitance; slow fall grid voltage technology is used to control the fall off rate of fault current, thus the peak value of dv/dt and uce of suppression device, reach the purpose of short-circuit protection；Being driven IGBT gate series resistance, reduce the climbing speed of gate drive voltage, the peak value of suppression electric current, the impedance making grid circuit is of a sufficiently low, to reduce the infringement of unexpected due to voltage spikes as far as possible, eliminates negative effect.Solve in prior art IGBT drive circuit, the grid emission interpolar of IGBT also exists bigger parasitic capacitance, produce and be unfavorable for the factor that IGBT turns on and off, and the Miller effect of grid-collector capacitance Cgc, cause the problem that unexpected due to voltage spikes damages.
Description
Technical field
This utility model relates to IGBT technical field, particularly relates to the IGBT drive circuit of a kind of high reliability.
Background technology
IGBT is the multiple device of MOSFET and bipolar transistor.The feature that its existing MOSFET easily drives, has again merit
The advantages such as rate transistor voltage, current capacity are big.Its frequency characteristic, between MOSFET and power transistor, can normally work
In tens kHz frequency ranges, therefore occupy leading position in the big or middle power of upper frequency is applied.
IGBT is voltage-controlled device, applies the DC voltage of tens V, only μ A level between its gate-emitter
Leakage current flow through, the most not power consumption.But it is (thousand of to there is bigger parasitic capacitance between the gate-emitter of IGBT
To pF up to ten thousand), rising and trailing edge at driving pulse voltage need to provide the charging and discharging currents of number A, could meet open with
The dynamic requirements turned off, this makes its drive circuit also must export certain peak point current.
IGBT as a kind of powerful multiple device, also existed stream time it may happen that locking phenomena and cause damage
Problem.When crossing stream, the speed as used blocks grid voltage, and too high current changing rate can cause overvoltage, needs for this
Soft switching technology to be used, thus grasp the driving of IGBT and protection feature is the most necessary.
The grid of IGBT realizes electric isolution by layer oxide film with emitter stage.Owing to this oxide-film is the thinnest, its breakdown potential
Pressure typically can only achieve 20～30V, and therefore gate breakdown is one of common cause of IGBT inefficacy.Although the most sometimes protecting
Demonstrate,prove gate drive voltage and be not above the maximum rated voltage of grid, but the stray inductance of gate trace and grid-inter-collector
Capacitance Coupled, also can produce the oscillating voltage making oxide layer damage.Small resistor of generally connecting in gate trace for this is permissible
Suppression oscillating voltage.
As shown in Figure 1, 2, in existing IGBT drive circuit, due to gate-emitter and the grid-colelctor electrode of IGBT
Between also exist distribution capacity Cge and Cgc, and emitter stage drive circuit there are distributed inductance Le, these distributed constants
Impact so that the actual drive waveforms of IGBT is incomplete same with preferable drive waveforms, and create be unfavorable for IGBT open with
The factor turned off.As it is shown on figure 3, in the t0 moment, gate drive voltage begins to ramp up, now affect grid voltage uge and rise tiltedly
The principal element of rate only has Rg and Cge, and grid voltage rises very fast.The grid threshold value of IGBT, colelctor electrode is reached in the t1 moment
Electric current begins to ramp up.2 reasons are had to cause uge waveform to deviate original track from now on.First, in emitter circuit
Induced voltage on distributed inductance Le strengthens along with the increase of collector current ic, thus weakens gate drive voltage, and
And reduce the climbing of uge between gate-emitter, slow down the growth of collector current.
Secondly, another factor affecting gate driver circuit voltage is the Miller effect of grid-collector capacitance Cgc.
In the t2 moment, collector current reaches maximum, and then grid-inter-collector electric capacity Cgc starts electric discharge, increases in the driving circuit
Add the capacity current of Cgc so that the pressure drop in drive circuit internal impedance increases, and also weakens gate drive voltage.Obviously,
The impedance of gate driver circuit is the lowest, and this effect is the most weak, and this effect is maintained to the t3 moment, till uce drops to zero.It
Impact slow down the opening process of IGBT equally.After the t3 moment, ic reaches steady-state value, and the factor affecting grid voltage uge disappears
After mistake, uge reaches maximum with climbing faster.
Be can be seen that by Fig. 3 waveform, due to the existence of Le and Cgc, in the actual motion of IGBT, the climbing speed of uge slows down
Many, the effect that this obstruction driving voltage rises, show as collector current is risen and the obstruction of opening process.In order to
Slowing down this effect, the internal resistance that should make Le and Cgc of IGBT module and gate driver circuit is the least, opens speed faster to obtain
Degree.
Waveform when IGBT turns off is as shown in Figure 4.T0 moment gate drive voltage begins to decline, and reaches firm energy in the t1 moment
Maintaining the level of colelctor electrode running current, IGBT enters linear work district, and uce begins to ramp up, now, and grid-colelctor electrode
Between the Miller effect of electric capacity Cgc dominate the rising of uce, because Cgc couples charging effect, uge is basically unchanged during t1-t2,
The speed that intrinsic impedance is determined between t2 moment uge and ic starts with gate-emitter declines, and when t3, uge and ic is equal
Reducing to zero, shutoff terminates.As seen from Figure 4, due to the existence of electric capacity Cgc so that the turn off process of IGBT also extends many.
In order to reduce this impact, on the one hand IGBT device less for Cgc should be selected；On the other hand the internal impedance of drive circuit should be reduced,
The charging current making inflow Cgc increases, and accelerates the rate of climb of uce.
In actual applications, the uge amplitude of IGBT also contributes to saturation conduction pressure drop: uge to be increased, and saturation conduction voltage will
Reduce.Owing to saturation conduction voltage is the one of the main reasons of IGBT heating, it is therefore necessary to reduce as far as possible.Generally uge be 15～
18V, if too high, easily causes gate breakdown.Typically take 15V.Add certain negative bias to when IGBT turns off its gate-emitter
It is pressed with the anti-harassing and wrecking ability beneficially improving IGBT, generally takes 5～10V.
Utility model content
This utility model is to solve traditional IGBT drive circuit, also exists bigger between the gate-emitter of IGBT
Parasitic capacitance, create the factor being unfavorable for that IGBT turns on and off, and the Miller effect of grid-collector capacitance Cgc,
Causing the problem that unexpected due to voltage spikes damages, it is provided that one can realize short-circuit protection, cut-off current is little, protects device, IGBT
When opening, the impedance of grid circuit is of a sufficiently low, to eliminate the IGBT drive circuit of a kind of high reliability of its negative effect as far as possible.
The IGBT drive circuit of a kind of high reliability that this utility model provides, IGBT drive circuit includes control circuit
With by driving IGBT, control circuit includes power supply circuits, voltage amplifier circuit, impulse circuit, and the outfan of power supply circuits connects
The input of described voltage amplifier circuit, the outfan of voltage amplifier circuit connects the input of impulse circuit, impulse circuit
Outfan connects the input being driven IGBT；
The driving transistor base input of control circuit adds electric capacity, i.e. drives transistor base shunt capacitance, adopts
The fall off rate of fault current is controlled by slow fall grid voltage technology, thus the peak value of dv/dt and uce of suppression device, reach short
The purpose of road protection；
Driven IGBT gate series resistance, reduce the climbing speed of gate drive voltage, the peak value of suppression electric current, make grid
The impedance of polar circuit is of a sufficiently low, to reduce the infringement of unexpected due to voltage spikes as far as possible, eliminates negative effect.
Further, the resistance value of gate series resistance reduces along with the increase of IGBT current capacity.
Further, power supply circuits use the automotive grade photoelectrical coupler ACPL-38JT being used as Phototube Coupling, it is achieved control
Circuit and the electric isolution by driving IGBT grid.
Compared with prior art, the beneficial effects of the utility model are:
Drive transistor base shunt capacitance, use slow fall grid voltage technology to control the fall off rate of fault current, thus
The peak value of dv/dt and uce of suppression device, short-circuit protection, cut-off current is little, protects device；Driven IGBT gate series electricity
Resistance, reduces the climbing speed of gate drive voltage, the peak value of suppression electric current, and the impedance making grid circuit is of a sufficiently low, with fall as far as possible
Low unexpected due to voltage spikes damages, and eliminates the impact of negative Miller effect.
Accompanying drawing explanation
In order to be illustrated more clearly that the technical scheme in this utility model embodiment, required in embodiment being described below
Accompanying drawing to be used is briefly described, it should be apparent that, the accompanying drawing in describing below is only realities more of the present utility model
Execute example, for those of ordinary skill in the art, on the premise of not paying creative work, it is also possible to attached according to these
Figure obtains other accompanying drawing.
Fig. 1 is IGBT drive circuit figure in prior art；
Fig. 2 is the equivalent circuit diagram containing parasitic capacitance in Fig. 1 in IGBT；
Oscillogram when Fig. 3 is that in Fig. 1, IGBT opens；
Oscillogram when Fig. 4 is that in Fig. 1, IGBT turns off；
Fig. 5 is the circuit diagram of the IGBT drive circuit of high reliability in this utility model specific embodiment.
Detailed description of the invention
Below in conjunction with the accompanying drawings and embodiment, detailed description of the invention of the present utility model is further described.Hereinafter implement
Example is only used for clearly illustrating the technical solution of the utility model, and can not limit protection model of the present utility model with this
Enclose.
The IGBT drive circuit of of the present utility model a kind of high reliability as shown in Figure 5, IGBT drive circuit includes
Control circuit and driven IGBT, control circuit includes power supply circuits, voltage amplifier circuit, impulse circuit, power supply circuits defeated
Going out end and connect the input of described voltage amplifier circuit, the outfan of voltage amplifier circuit connects the input of impulse circuit, arteries and veins
The outfan rushing circuit connects the input being driven IGBT.
The drive circuit of IGBT must possess 2 functions: one be realize control circuit with driven the electricity of IGBT grid every
From；Two are to provide suitable gate driving pulse.Realize electric isolution and can use pulse transformer, differential transformer and photoelectric coupling
Device.Use the IGBT drive circuit that the discrete components such as photo-coupler are constituted.When inputting control signal, optocoupler 10 foot turns on,
Transistor V12 ends, V11 conducting output+15V driving voltage.When inputting control signal optocoupler 10 foot and being zero, V11 ends,
V12 turns on, and exports-10V voltage.+ 15V and-10V power supply need near drive circuit, and drive circuit is directly installed on IGBT.
The driving transistor base input of control circuit adds electric capacity C92, i.e. drives transistor base shunt capacitance,
Slow fall grid voltage technology is used to control the fall off rate of fault current, thus the peak value of dv/dt and uce of suppression device, reach
The purpose of short-circuit protection: IGBT can bear the short circuit current of very short time, can bear the time of short circuit current and leading of this IGBT
Logical saturation voltage drop is relevant, extends along with the increase of saturation conduction pressure drop.As allowed to bear less than the IGBT of 2V in saturation voltage drop
Short circuit duration is less than 5 μ s, and the IGBT short circuit duration allowed to bear of saturation voltage drop 3V is up to 15 μ s, up to 30 μ s when 4～5V
Above.There is relation above is owing to along with the reduction of saturation conduction pressure drop, the impedance of IGBT also reduces, and short circuit current increases simultaneously
Greatly, power consumption during short circuit, along with square increasing of electric current, causes the time bearing short circuit to reduce rapidly.The protection being usually taken is arranged
Soft switching and fall grid voltage two kinds are executed.Soft switching refers to, when crossing stream and short circuit, directly turn off IGBT.But, the anti-harassing and wrecking of soft switching
Ability, once detect that over-current signal just turns off, it is easy to misoperation occurs.For increasing the anti-harassing and wrecking ability of protection circuit,
A time delay can be added between fault-signal and starting protection circuit, but fault current can steeply rise, greatly in this time delay
Adding greatly power attenuation, the di/dt simultaneously also resulting in device increases.So protection circuit starts often, device is still
So it is broken.Fall grid voltage is intended to detect when stream crossed by device, reduces grid voltage at once, but device still maintains conducting.It is provided with after fall grid voltage
Constant time lag, fault current is limited in a smaller value in this time delay, then the power consumption of device when reducing fault, extends
Time of device resistance to shorting, and di/dt when device turns off can be reduced, highly beneficial to device protection.If after time delay
Fault-signal still exists, then turn off device, if fault-signal disappears, drive circuit can recover normal duty automatically,
Thus greatly strengthen anti-harassing and wrecking ability.
10 feet of ACPL-38JT immediately turn off when a failure occurs it, and electric capacity C92 voltage is slowly discharged by R69 and R134,
Will not drop immediately.When voltage falling goes out the amplification region to Q11 audion, the saturation region of Q11 audion, the emitter current of Q11
Slow fall, the fault current of IGBT is limited in a smaller value in this time delay, it is achieved that fall grid voltage protection turns off.
Additionally increase electric capacity at transistor base input and can also prevent from disturbing the misoperation caused, and restricted software mistake
The superelevation switching frequency caused etc. advantage.
Driven IGBT gate series resistance R78, reduced the climbing speed of gate drive voltage, suppressed the peak value of electric current,
The impedance making grid circuit is of a sufficiently low, to reduce the infringement of unexpected due to voltage spikes as far as possible, eliminates negative effect: when turning off IGBT,
The rate of descent of its collector current is higher, the most in case of short-circuit faults, if do not taked soft switching measure, and facing of it
Boundary's current reduction ratio is up to several kA/ μ s.High current reduction ratio will induce higher on the distributed inductance of main circuit
Overvoltage, the running orbit of its current/voltage will be made when causing IGBT to turn off to damage beyond its safety operation area.Institute
With from the point of view of turning off, it is desirable to inductance and the current reduction ratio of main circuit are the smaller the better.But for IGBT opens,
The inductance of collector circuit is conducive to the peak electricity suppressing the reverse recovery current of fly-wheel diode and capacitor charging/discharging to cause
Stream, can reduce turn-on consumption, bears and higher opens current-rising-rate.Generally the colelctor electrode of IGBT on-off circuit is not required to
Wanting series inductance, its turn-on consumption can be controlled by by improving raster data model condition.
The rising of gate drive voltage, IGBT is opened turn off process by fall off rate large effect.The MOS of IGBT
Raceway groove directly controlling by grid voltage, and the drain current of MOSFET part controls the grid current of bipolar portion so that
The turn-on characteristics of IGBT depends mainly on its MOSFET part, so opening of IGBT is affected relatively by gate drive waveform
Greatly.The turn-off characteristic of IGBT depends primarily on the recombination rate of internal few son, and the compound of few son is affected by the shutoff of MOSFET, institute
With raster data model, the shutoff of IGBT is also had an impact.
When frequency applications, the rising of driving voltage, fall off rate should soon, to improve IGBT switching rate reduction damage
Consumption.
IGBT opens the fastest in normal state, is lost the least.But reverse if any fly-wheel diode in opening process
Restoring current and the discharge current of Absorption Capacitance, then open the fastest, and the peak point current that IGBT bears is the biggest, is more easily caused IGBT
Infringement.Now should reduce the climbing speed of gate drive voltage, i.e. increase the resistance of gate series resistance, suppress the peak of this electric current
Value.Its cost is bigger turn-on consumption.Utilizing this technology, the current peak of opening process can control at arbitrary value.
Being analyzed from above, the opening process of IGBT is affected relatively big by gate series resistance and drive circuit internal impedance,
And smaller on turn off process impact, series resistance is little is conducive to accelerating to turn off speed, reduces turn-off power loss, but too small meeting causes
Di/dt is excessive, produces bigger collector voltage spike.Therefore to require to combine according to specific design to series resistance comprehensively
The consideration closed.
The waveform of driving pulse is also had an impact by resistance.Impulse hunting, excessive seasonal pulse can be caused when resistance value is too small
Before and after rushing waveform, edge can occur to postpone and slow down.Grid input capacitance Cge of IGBT is along with the increase of its rated current capacity
And increase.In order to keep before and after identical driving pulse along speed, for the IGBT device that current capacity is big, should provide bigger
Front and back along charging current.To this end, the resistance value of gate series resistance should reduce along with the increase of IGBT current capacity.
Power supply circuits use Avago company to be used as the automotive grade photoelectrical coupler ACPL-38JT of Phototube Coupling, it is achieved control
Circuit is with the electric isolution by driving IGBT grid: the ACPL-38JT of Avago company is automobile IGBT raster data model optical coupler,
Output electric current 2.5A, is integrated with desaturation (VCE) detection and malfunction is fed back, and meets automotive electronics AEC-Q100Grade 1
Standard-required, can drive the IGBT of IC=150A, VCE=1200V, maximum switching speed 500ns, 15kV/ when VCM=1,500V
μ s common mode inhibition (CMR) ability, IGBT " soft switching ", 5-30 running voltage, operating temperature-40 DEG C to+125 DEG C.ACPL-38JT
Band delayed under-voltage locking (UVLO) defencive function of photoelectrical coupler can protect IGBT from door electricity by forcing reduction output
The interference that pressure is not enough.Integrated IGBT gate driver aims at the motor-driven Performance And Reliability of increase and does not affect discrete
Design cost, size and sophistication and design.This equipment is furnished with small size 16 pin (SO-16) surface mount, meets UL
1577, IEC/EN/DIN EN 60747-5-2 and CSA industry safety standards.ACPL-38JT is mainly used in the IGBT/ that insulate
MOSFET inverter gates drives, automobile DC/DC, AC/DC transducer, and AC and brushless DC motor drive and UPS.
The foregoing is only preferred embodiment of the present utility model, not in order to limit this utility model, all at this
Within the spirit of utility model and principle, any modification, equivalent substitution and improvement etc. made, should be included in this utility model
Protection domain within.
Claims (3)
1. the IGBT drive circuit of a high reliability, it is characterised in that described IGBT drive circuit includes control circuit
With driven IGBT, described control circuit includes power supply circuits, voltage amplifier circuit, impulse circuit, described power supply circuits defeated
Going out end and connect the input of described voltage amplifier circuit, the outfan of described voltage amplifier circuit connects the defeated of described impulse circuit
Entering end, the outfan of described impulse circuit connects the described input by driving IGBT；
The driving transistor base input of described control circuit adds electric capacity, the most described driving transistor base parallel connection electricity
Hold, use slow fall grid voltage technology to control the fall off rate of fault current, thus the peak value of dv/dt and uce of suppression device, reach
Purpose to short-circuit protection；
The described IGBT gate series resistance that driven, the climbing speed of reduction gate drive voltage, the peak value of suppression electric current, make grid
The impedance of polar circuit is of a sufficiently low, to reduce the infringement of unexpected due to voltage spikes as far as possible, eliminates negative effect.
The IGBT drive circuit of a kind of high reliability the most according to claim 1, it is characterised in that gate series resistance
Resistance value reduces along with the increase of IGBT current capacity.
The IGBT drive circuit of a kind of high reliability the most according to claim 1, it is characterised in that described power supply circuits are adopted
With the automotive grade photoelectrical coupler ACPL-38JT as Phototube Coupling, it is achieved control circuit with by drive IGBT grid electricity every
From.
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| CN201620719419.7U CN205847212U (en) | 2016-07-08 | 2016-07-08 | A kind of IGBT drive circuit of high reliability |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107835002A (en) * | 2017-09-20 | 2018-03-23 | 同方威视技术股份有限公司 | Protection circuit, vibration compensation circuit and power supply circuit in solid state pulse modulator |
| WO2018138175A1 (en) * | 2017-01-25 | 2018-08-02 | Eaton Intelligent Power Limited | Low-voltage circuit breaker device |
| CN108738184A (en) * | 2017-04-24 | 2018-11-02 | 佛山市顺德区美的电热电器制造有限公司 | The control method and device of the IGBT switching tubes of electromagnetic oven |
| CN109245042A (en) * | 2018-10-31 | 2019-01-18 | 深圳市麦斯杰网络有限公司 | Electric leakage detecting and warning device |
| CN110994959A (en) * | 2019-12-06 | 2020-04-10 | 潍坊学院 | Transformer isolation IGBT drive control system, method and circuit |
| US10622991B2 (en) | 2017-11-03 | 2020-04-14 | Dialog Semiconductor (Uk) Limited | Switch driver |
| CN112260525A (en) * | 2020-10-10 | 2021-01-22 | 上海金脉电子科技有限公司 | IGBT (insulated Gate Bipolar transistor) driving topological circuit and soft switching circuit thereof |
| CN113253088A (en) * | 2021-06-25 | 2021-08-13 | 上海瞻芯电子科技有限公司 | Transistor gate oxide testing device and system |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018138175A1 (en) * | 2017-01-25 | 2018-08-02 | Eaton Intelligent Power Limited | Low-voltage circuit breaker device |
| CN108738184A (en) * | 2017-04-24 | 2018-11-02 | 佛山市顺德区美的电热电器制造有限公司 | The control method and device of the IGBT switching tubes of electromagnetic oven |
| CN108738184B (en) * | 2017-04-24 | 2021-03-19 | 佛山市顺德区美的电热电器制造有限公司 | Control method and device for IGBT (insulated Gate Bipolar transistor) switching tube of induction cooker |
| CN107835002A (en) * | 2017-09-20 | 2018-03-23 | 同方威视技术股份有限公司 | Protection circuit, vibration compensation circuit and power supply circuit in solid state pulse modulator |
| CN107835002B (en) * | 2017-09-20 | 2024-03-12 | 同方威视技术股份有限公司 | Protection circuit, oscillation compensation circuit and power supply circuit in solid-state pulse modulator |
| US10622991B2 (en) | 2017-11-03 | 2020-04-14 | Dialog Semiconductor (Uk) Limited | Switch driver |
| CN109245042A (en) * | 2018-10-31 | 2019-01-18 | 深圳市麦斯杰网络有限公司 | Electric leakage detecting and warning device |
| CN110994959A (en) * | 2019-12-06 | 2020-04-10 | 潍坊学院 | Transformer isolation IGBT drive control system, method and circuit |
| CN112260525A (en) * | 2020-10-10 | 2021-01-22 | 上海金脉电子科技有限公司 | IGBT (insulated Gate Bipolar transistor) driving topological circuit and soft switching circuit thereof |
| CN113253088A (en) * | 2021-06-25 | 2021-08-13 | 上海瞻芯电子科技有限公司 | Transistor gate oxide testing device and system |
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Effective date of registration: 20170906 Address after: 215000 workshop No. 6, Star Industrial Park, 2 Double Road, Suzhou Industrial Park, Jiangsu, China Patentee after: SUZHOU ZHONGLIANNENG INNOVATION ENERGY TECHNOLOGY CO.,LTD. Address before: 200000 Shanghai city Changning District Xianxia Road No. 350 Building No. 3 room 4806 Patentee before: SINA-NEWCHANCE NEW ENERGY TECHNOLOGY Corp.,Ltd. |
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Effective date of registration: 20230627 Address after: 3-2, Haiwan Building, No. 1, Fenghuangshan Road, Fenghuang Town, Linzi District, Zibo City, Shandong Province 255,000 Patentee after: Shandong Zhonglian nengchuang Power Technology Co.,Ltd. Address before: Plant 6, Xinghua Industrial Park, No. 2, Shuangma Road, Suzhou Industrial Park, Jiangsu Province, 215000 Patentee before: SUZHOU ZHONGLIANNENG INNOVATION ENERGY TECHNOLOGY CO.,LTD. |
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