CN100405738C - Driving protective circuit for inverse resistance type insulated gate bipolar transistor - Google Patents
Driving protective circuit for inverse resistance type insulated gate bipolar transistor Download PDFInfo
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- CN100405738C CN100405738C CNB2004100688412A CN200410068841A CN100405738C CN 100405738 C CN100405738 C CN 100405738C CN B2004100688412 A CNB2004100688412 A CN B2004100688412A CN 200410068841 A CN200410068841 A CN 200410068841A CN 100405738 C CN100405738 C CN 100405738C
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Abstract
The present invention relates to a driving protective circuit of an inverse impedance type insulated-gate bipolar transistor, which is characterized in that the driving protective circuit comprises a controller, a three-section type driving circuit and a detecting circuit, wherein the three-section type driving circuit comprises a dynamic charge current source, a dynamic discharge current source and a push-pull amplifier circuit connected with the dynamic charge current source and the dynamic discharge current source in series; when a driven inverse impedance type insulated-gate bipolar transistor is respectively switched on and off, the detecting circuit is used for detecting the reducing time and the increasing time of a collecting electrode voltage of the driven inverse impedance type insulated-gate bipolar transistor. The driving protective circuit can implement the rapid on-off of devices, and simultaneously, the increasing rate of a collecting electrode current in an on process and the increasing rate of the collecting electrode voltage in an off process are controlled; simultaneously, the collecting electrode of the inverse impedance type insulated-gate bipolar transistor is connected to an RB-IGBT over current protective circuit based on V<ce> detection. The driving protective circuit comprises two V<ce> detecting solutions.
Description
Technical field
The invention belongs to the Drive Protecting Circuit of inverse resistance type insulated gate bipolar transistor, belong to the control technology field of RB-IGBT.
Background technology
Inverse resistance type insulated gate bipolar transistor (Reverse Blocking Insulated Gate Bipolar Transistor) is called for short RB-IGBT, is a kind of novel power semiconductor device.With respect to common IGBT device, it has forward and reverse blocking ability of voltage.RB-IGBT can be used to form bidirectional switch, realizes the two-way flow of energy, is mainly used in the matrix converter at present.Fig. 1 has provided the bi-directional switch structure that adopts RB-IGBT and common IGBT.As can be seen, adopt the required power device of the bidirectional switch of RB-IGBT minimum.Simultaneously, adopt the bidirectional switch of the RB-IGBT drop of pressure that powers on to be significantly smaller than the bidirectional switch of common IGBT during stable state, so power loss also significantly reduce.
Each link title of RB-IGBT as shown in Figure 2.Because RB-IGBT is the voltage-type device, can pass through grid-emitter voltage V
GeControl realize the turn-on and turn-off of device.
The conducting of RB-IGBT and the essence of turn off process are the charge and discharge process of driving power to its grid.Apply constant charging or leakage current as grid, then grid in its switching process-emitter voltage V to RB-IGBT
Ge, collector current i
cAnd collector emitter voltage V
CeOscillogram as shown in Figure 3, Figure 4.
RB-IGBT opening process shown in Figure 3 can be divided into three phases:
(1) drive and to open after instruction sends, driving power is to gate capacitance charges, grid voltage V
GeRise its rate of rise direct ratio and drive current.Rising to threshold voltage (t
1) before, IGBT still is in off state, collector electrode only flows through minimum forward leakage current;
(2) V
GeAfter surpassing threshold voltage, collector current i
cBegin rapidly to rise, and at t
2Constantly reach maximum (follow the overshoot spike of some electric currents, can reduce this spike by suppressing collector current climbing di/dt), at this moment, IGBT enters the Miller effect district, grid equivalent input capacitance infinity, and an of short duration platform appears in GE voltage.Voltage V between collection, the emitter-base bandgap grading in this process
CeChange little;
(3) after the Miller effect began, collection-radio pressed off beginning decline, up to V
CeReach the on state voltage value, IGBT enters conducting state.Grid voltage V
GeAlso because the continuation of electric capacity charging and slowly rise to final drive level.
RB-IGBT turn off process shown in Figure 4 can be divided into three phases equally:
(1) after driving shutoff instruction was sent, grid capacitance was discharged by driving power, V
GeDescend, the slope of decline is proportional to the leakage current that driving power provides.Be similar to and open characteristic, at t
5Constantly enter the Miller effect district;
(2) in the Miller effect district, V
CeBegin to rise.At t
6Constantly, V
CeWhen reaching peak value (spike that has voltage equally reduces the climbing dv/dt of CE voltage, can effectively suppress this spike), the Miller effect finishes.Collector current i in this process
cSubstantially remain unchanged;
(3) t
6Constantly, V
GeContinue to descend, cause collector current i
cReduce.V
GeBe reduced to after the turn-on threshold voltage, the inside equivalence MOSFET of IGBT turn-offs rapidly.Owing to do not have the existence of inverse parallel diode, the i of RB-IGBT
cThere is reversely restoring process.Subsequently, the PNP transistor of inner equivalence does not have bleed-off circuit, and turn-off speed is slower, thereby forms shutoff hangover electric current.This hangover is to be subjected to IGBT grid-controlled, generally about the us level.
From the process of switch as can be seen, the size of charging and discharging currents has determined RB-IGBT to open to turn-off required total time of transient process.Simultaneously, the also size of direct ratio and charging and discharging currents almost of opening process collector current climbing di/dt and turn off process collector voltage climbing dv/dt.The di/dt of devices switch process and the increase of dv/dt can cause rolling up of electromagnetic interference EMI, may cause the latching effect of RB-IGBT simultaneously.Therefore, the design philosophy of drive circuit is: when realizing the quick break-make of device, suppress the size of di/dt and dv/dt.
Present integrated IGBT chip for driving is (as the EXB841 of Japanese fuji company, the MC33153 of U.S. Motorola Inc. etc.) adopt light-coupled isolation usually, recommend the structure of output, chip for driving ground (0V potential point) directly linked to each other with the IGBT emitter, thereby and output voltage signal is connected to the IGBT grid and controls its conducting and shutoff.Its fundamental diagram as shown in Figure 5.This drive circuit only depends on driving resistor R104, the size of the size decision drive current of R105, can't in the switch transient process, control in real time charging and discharging currents, therefore be difficult to realize simultaneously that quick break-make and inhibition open the di/dt and the dv/dt of turn off process, in most cases can only be simply compromise.
The integrated overcurrent protection logic of device in the common IGBT drive circuit.V is generally adopted in overcurrent protection
CeThe way that detects.Saturation voltage drop during the IGBT conducting is linear substantially with the electric current that flows through IGBT.When particularly short circuit occurred, IGBT withdrawed from saturated, V
CeTo sharply rise.Therefore only need to detect V
Ce, when it surpasses certain threshold value, and and gate drive signal do logical, can judge whether overcurrent of device.With MC33153 is example, and its overcurrent protection principle as shown in Figure 6.Under the IGBT shutoff situation, the Q103 conducting, comparator is output as " low ", the shielding protection action; When IGBT had Continuity signal, Q103 turn-offed.Under the operate as normal, its collector potential is saturated tube voltage drop, the D101 conducting, and comparator normal phase input end current potential is output as " low " less than the reverse input end current potential, does not protect; If IGBT has Continuity signal, and overcurrent, then collector potential raises rapidly, and after certain potentials, comparator in-phase input end current potential surpasses reverse input end, output " height ", then protective circuit is started working.
Because the fast recovery and protection diode of the common inverse parallel of common IGBT D, so V
CeScope only may be from the high pressure of forward to negative diode tube pressuring drop, also, when common IGBT bears reverse voltage, form path, its V by the inverse parallel diode
CeCan not be operated in the high pressure of negative sense.Therefore, by diode D101 forceful electric power and driving loop are isolated during the forward high pressure, make the drive circuit trouble free service.
Yet RB-IGBT does not have inverse parallel diode, V
CePositive negative sense working limit is suitable, can see that if adopt the connection of present integrated drive chips protective circuit, D101 can directly introduce the damage that drive circuit causes driving power with the high pressure of negative sense, even burns device.Therefore, overcurrent protection function all is not suitable for RB-IGBT in the present ripe IGBT chip for driving.
Summary of the invention
The present invention is directed to the weak point of traditional push-pull driver circuit, propose a kind of syllogic drive circuit, by introducing two dynamic current sources, when improving devices switch speed, the di/dt of restriction opening process and the dv/dt of turn off process.At the operating characteristic of RB-IGBT, a kind of new V has been proposed simultaneously
CeDetection method is simultaneously according to V
CeMagnitude range has designed two kinds of different overcurrent protection strategies.
As can be seen, collector current uphill process and collection-radio presses the process of liter when turn-offing time can be controlled by the speed that grid discharges and recharges when opening on the dynamic characteristic that turns on and off from RB-IGBT.Therefore, can consider to control dynamically grid charging and discharging currents size, when needs suppress di/dt and dv/dt, reduce charging and discharging currents, and strengthen charging and discharging currents, then be expected in the quick break-make that realizes device, di/dt and dv/dt be limited in allowed limits in other period.
The invention is characterized in:
(1) controller;
(2) syllogic drive circuit comprises:
Dynamic charging current source, contain:
The first N-channel MOS FET, its drain electrode meets positive supply 15V, and the diode D3 of source electrode through just connecing links to each other with grid, series resistor R1 between grid and positive supply, the negative electrode of diode D3 is connected to the negative electrode of voltage stabilizing didoe D1, and the control signal of this charging current source is connected to the anode of voltage stabilizing didoe D1;
The one P channel mosfet, its source electrode meets positive supply 15V, and grid links to each other with the source electrode of the first N-channel MOS FET after resistance R 3;
Dynamic leakage current source, contain:
The 2nd P channel mosfet, its drain electrode meets negative supply-5V, link to each other with its drain electrode behind the diode D4 of grid through just connecing, grid is connected to negative supply-5V by resistance R 2 again simultaneously, the anode of diode D4 is connected to the anode of voltage stabilizing didoe D2, and the control signal in this dynamic leakage current source is connected to the negative electrode of voltage stabilizing didoe D2;
The second N-channel MOS FET, its source electrode is connected to negative supply-5V, and grid links to each other through the source electrode of resistance R 4 with the 2nd P channel mosfet;
Push-pull circuit, contain:
First branch road that is composed in series by NPN transistor Q1 and resistance R 7 that is connected in series successively with positive supply 15V;
Second branch road that is composed in series by PNP transistor Q2 and resistance R 8 that is connected in series successively with negative supply-5V;
The tie point of described first branch road and second branch road links to each other with the drain electrode of a P channel mosfet and the second N-channel MOS FET through resistance R 5, resistance R 6 respectively again with when driven inverse resistance type insulated gate bipolar transistor grid links to each other;
(3) when turn-on and turn-off, its collection-radio is pressed V to driven inverse resistance type insulated gate bipolar transistor respectively
CeDecline constantly and the testing circuit constantly that rises, contain:
V
CeDecline testing circuit constantly, comprising:
The 3rd P channel mosfet, its source electrode meets positive supply 15V, and the series arm that grid constitutes via resistance R 10 and capacitor C 1 obtains the collection-radio of inverse resistance type insulated gate bipolar transistor and presses signal V
Ce, drain electrode is connected to 0V through resistance R 11; A voltage stabilizing didoe D5 in parallel and a resistance R 9 between the grid of the 3rd P channel mosfet and source electrode;
Article one, by the branch road of diode D6 and resistance R 13 parallel connections, the anode of diode D6 links to each other through the drain electrode of resistance R 12 with second channel mosfet;
Article one, by the branch road of voltage stabilizing didoe D7 and capacitor C 2 parallel connections, the anode of diode D7 is connected to zero volt power supply, and negative electrode links to each other with the negative electrode of diode D6, generation use V
Gc2The V of expression
CeThe moment detection signal that descends is sent into controller;
V
CeRising is testing circuit constantly, comprising:
The 3rd N-channel MOS FET, its drain electrode is connected to power supply+15V through resistance R 16, source electrode connecting to neutral volt power supply, parallel voltage-stabilizing diode D8 and resistance R 14 between grid and zero volt power supply, this grid is connected to a branch road that is made of capacitor C 3 and resistance R 15 series connection simultaneously again, and the collection-radio that is obtained inverse resistance type insulated gate bipolar transistor by this series arm is pressed information V
Ce
The collector electrode of inverse resistance type insulated gate bipolar transistor connects a current foldback circuit, and this current foldback circuit contains:
A resistance R 17, the collector electrode of the described inverse resistance type insulated gate bipolar transistor of one termination, and be connected to an amplitude limiter circuit between the other end and the ground, this amplitude limiter circuit is made of voltage stabilizing didoe D9 and the diode D10 series connection that two negative electrodes link together;
An operational amplifier, its positive input terminal is connected to the other end of resistance R 17 through resistance R 18, and negative input end is connected to ground through resistance R 19, and negative input end also is connected to the output of operational amplifier through resistance R 20 simultaneously;
General current foldback circuit and short circuit overcurrent protective circuit, its input links to each other with the output of operational amplifier respectively.
The collector electrode of inverse resistance type insulated gate bipolar transistor connects a current foldback circuit, and this current foldback circuit contains:
A resistance R 21, the collector electrode of the described inverse resistance type insulated gate bipolar transistor of one termination, and the other end is connected to the anode of diode D11 and the negative electrode of diode D12 respectively, and the negative electrode of diode D11 is connected to the 5V positive supply, and the anode of diode D12 is connected to negative supply;
An operational amplifier, its positive input terminal is connected to the other end of resistance R 21 through resistance R 22, and negative input end is connected to ground through resistance R 23, and negative input end also is connected to the output of operational amplifier through resistance R 24 simultaneously;
General current foldback circuit and short circuit overcurrent protective circuit, its input links to each other with the output of operational amplifier respectively.
Experiment showed, the present invention when realizing the quick break-make of device, control and suppressed the climbing of collector current of opening process and the climbing of turn off process collector voltage.
Description of drawings
Fig. 1. the structure of bidirectional switch.
Each link title of Fig. 2 .RB-IGBT.
Transient process when Fig. 3 .RB-IGBT opens.
Transient process when Fig. 4 .RB-IGBT turn-offs.
Fig. 5. traditional push-pull driver circuit.
Fig. 6. common IGBT current foldback circuit schematic diagram (MC33153).
The syllogic drive circuit of Fig. 7 .RB-IGBT.
Fig. 8. charging current source control procedure schematic diagram when opening.
Fig. 9 .V
CeTesting circuit constantly descends.
Figure 10. leakage current source control procedure schematic diagram during shutoff.
Figure 11 .V
CeTesting circuit constantly rises.
Figure 12. based on V
CeThe RB-IGBT overcurrent protection principle schematic that detects:
Embodiment
The syllogic drive circuit schematic circuit that the present invention proposes as shown in Figure 7.
On traditional push-pull configuration (Q1, Q2, R7, R8), add two dynamic charging and discharging currents sources (M1 wherein, M2, D1, D3, R1, R3, R5 constitutes the charging current source of opening process; M3, M4, D2, D4, R2, R4, R6 constitutes the discharging current source of turn off process).Control circuit is realized by programmable digital logic chip GAL and testing circuit.
On device was selected: M1 used N-channel MOS FET 2N7000, and the typical case opens turn-off time 10ns; M2 uses P channel mosfet IRFR5505.Conducting time-delay+rise time 40ns, turn off delay time+fall time 36ns.M3 uses P channel fet VP0300.The typical case opens turn-off time 30ns; M4 uses N-channel MOS FET IRFR220.Conducting time-delay+rise time 30ns, turn off delay time+fall time 32ns.The current source control logic is used GAL16v8D-25LP, typical case's time-delay 25ns.
Fig. 8 has provided the control logic of charging current source in the RB-IGBT opening process.Each time point of its time shaft is corresponding one by one with Fig. 3.Its driving process also can be divided into three phases:
(1) when sending, drive circuit opens signal t
0After, the conducting charging current source strengthens the gate charges electric current at once.Since the increase of drive current, t
0To t
1Time can shorten greatly.
(2) when detecting V
GeSurpass threshold voltage V
Ge (th)Back (t
1Constantly), collector current i
cBegin to occur.This moment is the cut-off current source at once, guarantees t
1To t
2The drive current of time period is suitable with the drive current of traditional push-pull configuration, so i
cClimbing di/dt also just basic identical with the di/dt of push-pull configuration.
(3) i
cAfter rising to maximum, V
CeBegin (the t that descends
2Constantly).At this moment conducting current source again again is until V
GeSurpass 13V (t
3Fail constantly).V like this
GeThe Miller effect time and V
CeThe voltage hangover time is shortened, and the opening process loss of RB-IGBT is also just reduced.
V
CeDecline constantly can adopt circuit as shown in Figure 9 to realize.Among Fig. 9, V in the steady-state process
CeConstant, there is not electric current to flow through among the R9, not conducting of P channel mosfet M5; V
CeDuring decline, electric current flows through R9, the pressure drop conducting M5 on it, thus the output control signal is sent to logic processing circuit, the conducting charging current source.
Each time point of its time shaft of control logic that Figure 10 has provided leakage current source in the IGBT turn off process is corresponding one by one with Fig. 4.Equally, turn-off the driving process and also roughly be divided into three sections:
(1) sends cut-off signals (t when drive circuit
4Constantly), the grid leakage current is strengthened in conducting leakage current source at once, to reduce t
4To t
5This section time of delay.
(2) work as V
CeBegin (the t that rises
5In the time of constantly), turn-off the leakage current source at once.Can guarantee V like this
CeThe climbing dv/dt and the dv/dt of traditional push-pull configuration basic identical.
(3) when detecting V
CeBack (t no longer rises
6Constantly), conducting leakage current source reduces the turn off process loss to shorten the turn-off time again.
With opening process V
CeDescend moment detection type seemingly, V
CeRising constantly can adopt as the circuit of Figure 11 and realize.Among Figure 11, V in the steady-state process
CeConstant, there is not electric current to flow through among the R14, not conducting of N-channel MOS FET M6; V
CeDuring rising, electric current flows through R14, the pressure drop conducting M6 on it, thus the output control signal is sent to logic processing circuit, turn-offs the leakage current source.
The present invention proposes two kinds of V at RB-IGBT
CeDetection method, and be used in the current foldback circuit.Its schematic diagram as shown in figure 12.
By the bigger resistance of resistance with V
CeBe incorporated into and drive the loop, and with its amplitude limit to the driving power scope.Carry out the isolation of signal amplifies to improve accuracy of detection by operational amplifier.The selection of amplifier must select that bias current is less for use, speed device (as LF353, maximum bias electric current 8nA) faster.Signal after amplifying is carried out simple capacitance-resistance filter, eliminate and disturb the noise that brings, with the foundation of this signal as the overcurrent protection action.
In addition, because long term device is operated in heating easily under the situation of big electric current, therefore, if device longly also wished can cut off the device operation and report to the police in big electric current (as rated current of devices 100A, thinking that then 70A is general overcurrent) the following operating time of situation.So according to the saturation characteristics of inverse resistance type IGBT, will protect action to be divided into two parts: (1) is as break-over of device and 2.5V＜V
CeDuring＜3.0V, be judged as general overcurrent, time-delay 100us is not if over-current phenomenon avoidance disappears and then falls the soft shutoff inverse resistance type of grid voltage IGBT device slowly; (2) as break-over of device and V
CeDuring＞3.0V, be judged as short circuit overcurrent, grid voltage is reduced to 10V to improve the ability that device bears short circuit current, after the time-delay 10us, do not disappear then soft shutoff IGBT as if short circuit current.The logic of protection uses the GAL device to control.
Simultaneously, in case after judging real overcurrent, to the control loop output alarm signal, control loop adopts necessary strategy to carry out the system protection action to drive circuit by the light-coupled isolation chip.
Claims (3)
1. the Drive Protecting Circuit of inverse resistance type insulated gate bipolar transistor is characterized in that, it contains:
(1) controller;
(2) syllogic drive circuit comprises:
Dynamic charging current source, contain:
The first N-channel MOS FET (M1), its drain electrode meets positive supply 15V, and the diode D3 of source electrode through just connecing links to each other with grid, series resistor R1 between grid and positive supply, the negative electrode of diode D3 is connected to the negative electrode of voltage stabilizing didoe D1, and the control signal of this charging current source is connected to the anode of voltage stabilizing didoe D1;
The one P channel mosfet (M2), its source electrode meets positive supply 15V, and grid links to each other with the source electrode of the first N-channel MOS FET (M1) after resistance R 3;
Dynamic leakage current source, contain:
The 2nd P channel mosfet (M3), its drain electrode meets negative supply-5V, link to each other with its drain electrode behind the diode D4 of grid through just connecing, grid is connected to negative supply-5V by resistance R 2 again simultaneously, the anode of diode D4 is connected to the anode of voltage stabilizing didoe D2, and the control signal in this dynamic leakage current source is connected to the negative electrode of voltage stabilizing didoe D2;
The second N-channel MOS FET (M4), its source electrode is connected to negative supply-5V, and grid links to each other through the source electrode of resistance R 4 with the 2nd P channel mosfet (M3);
Push-pull circuit, contain:
First branch road that is composed in series by NPN transistor Q1 and resistance R 7 that is connected in series successively with positive supply 15V;
Second branch road that is composed in series by PNP transistor Q2 and resistance R 8 that is connected in series successively with negative supply-5V;
The tie point of described first branch road and second branch road links to each other with the drain electrode of a P channel mosfet (M2) and the second N-channel MOS FET (M4) through resistance R 5, resistance R 6 respectively again with when driven inverse resistance type insulated gate bipolar transistor grid links to each other;
(3) when turn-on and turn-off, its collection-radio is pressed V to driven inverse resistance type insulated gate bipolar transistor respectively
CeDecline constantly and the testing circuit constantly that rises, contain:
V
CeDecline testing circuit constantly, comprising:
The 3rd P channel mosfet (M5), its source electrode meets positive supply 15V, and the series arm that grid constitutes via resistance R 10 and capacitor C 1 obtains the collection-radio of inverse resistance type insulated gate bipolar transistor and presses signal V
Ce, drain electrode is connected to 0V through resistance R 11; A voltage stabilizing didoe D5 in parallel and a resistance R 9 between the grid of the 3rd P channel mosfet (M5) and source electrode;
Article one, by the branch road of diode D6 and resistance R 13 parallel connections, the anode of diode D6 links to each other through the drain electrode of resistance R 12 with the 3rd P channel mosfet (M5);
Article one, by the branch road of voltage stabilizing didoe D7 and capacitor C 2 parallel connections, the anode of diode D7 is connected to zero volt power supply, and negative electrode links to each other with the negative electrode of diode D6, generation use V
Gc2The V of expression
CeThe moment detection signal that descends is sent into controller;
V
CeRising is testing circuit constantly, comprising:
The 3rd N-channel MOS FET (M6), its drain electrode is connected to power supply+15V through resistance R 16, source electrode connecting to neutral volt power supply, parallel voltage-stabilizing diode D8 and resistance R 14 between grid and zero volt power supply, this grid is connected to a branch road that is made of capacitor C 3 and resistance R 15 series connection simultaneously again, and the collection-radio that is obtained inverse resistance type insulated gate bipolar transistor by this series arm is pressed information V
Ce
2. the Drive Protecting Circuit of inverse resistance type insulated gate bipolar transistor according to claim 1, it is characterized in that: the collector electrode of described inverse resistance type insulated gate bipolar transistor connects a current foldback circuit, and this current foldback circuit contains:
A resistance R 17, the collector electrode of the described inverse resistance type insulated gate bipolar transistor of one termination, and be connected to an amplitude limiter circuit between the other end and the ground, this amplitude limiter circuit is made of voltage stabilizing didoe D9 and the diode D10 series connection that two negative electrodes link together;
An operational amplifier, its positive input terminal is connected to the other end of resistance R 17 through resistance R 18, and negative input end is connected to ground through resistance R 19, and negative input end also is connected to the output of operational amplifier through resistance R 20 simultaneously;
General current foldback circuit and short circuit overcurrent protective circuit, its input links to each other with the output of operational amplifier respectively.
3. the Drive Protecting Circuit of inverse resistance type insulated gate bipolar transistor according to claim 1, it is characterized in that: the collector electrode of described inverse resistance type insulated gate bipolar transistor connects a current foldback circuit, and this current foldback circuit contains:
A resistance R 21, the collector electrode of the described inverse resistance type insulated gate bipolar transistor of one termination, and the other end is connected to the anode of diode D11 and the negative electrode of diode D12 respectively, and the negative electrode of diode D11 is connected to the 5V positive supply, and the anode of diode D12 is connected to negative supply;
An operational amplifier, its positive input terminal is connected to the other end of resistance R 21 through resistance R 22, and negative input end is connected to ground through resistance R 23, and negative input end also is connected to the output of operational amplifier through resistance R 24 simultaneously;
General current foldback circuit and short circuit overcurrent protective circuit, its input links to each other with the output of operational amplifier respectively.
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|---|---|---|---|
| CNB2004100688412A CN100405738C (en) | 2004-07-09 | 2004-07-09 | Driving protective circuit for inverse resistance type insulated gate bipolar transistor |
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|---|---|---|---|
| CNB2004100688412A CN100405738C (en) | 2004-07-09 | 2004-07-09 | Driving protective circuit for inverse resistance type insulated gate bipolar transistor |
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| CN100405738C true CN100405738C (en) | 2008-07-23 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5144514A (en) * | 1989-06-26 | 1992-09-01 | Kabushiki Kaisha Toyoda Jidoshokki Seisakusho | Transistor device drive circuit |
| JP2002076017A (en) * | 2000-08-28 | 2002-03-15 | Fuji Electric Co Ltd | Semiconductor device |
| JP2003283314A (en) * | 2002-03-25 | 2003-10-03 | Denso Corp | Load driving circuit with overcurrent detecting function |
-
2004
- 2004-07-09 CN CNB2004100688412A patent/CN100405738C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5144514A (en) * | 1989-06-26 | 1992-09-01 | Kabushiki Kaisha Toyoda Jidoshokki Seisakusho | Transistor device drive circuit |
| JP2002076017A (en) * | 2000-08-28 | 2002-03-15 | Fuji Electric Co Ltd | Semiconductor device |
| JP2003283314A (en) * | 2002-03-25 | 2003-10-03 | Denso Corp | Load driving circuit with overcurrent detecting function |
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| CN1588799A (en) | 2005-03-02 |
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