CN108134514B - Discharge protection circuit of power MOS tube in inverter circuit - Google Patents
Discharge protection circuit of power MOS tube in inverter circuit Download PDFInfo
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- CN108134514B CN108134514B CN201711419515.5A CN201711419515A CN108134514B CN 108134514 B CN108134514 B CN 108134514B CN 201711419515 A CN201711419515 A CN 201711419515A CN 108134514 B CN108134514 B CN 108134514B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
Abstract
The invention relates to a discharge protection circuit of a power MOS (metal oxide semiconductor) tube in an inverter circuit, which comprises a voltage regulation comparison circuit, an isolation discharge driving circuit, a discharge circuit and an absorption circuit, wherein the voltage regulation comparison circuit is connected with the isolation discharge driving circuit; when the bus voltage fluctuates, the absorption circuit stabilizes the bus voltage; when the bus voltage exceeds a set threshold value, the voltage regulating comparison circuit controls the isolation and discharge driving circuit to be started; after the isolation bleeder drive circuit is started, the bleeder circuit is controlled to be started, and the electric energy of the bus is consumed. The invention realizes the protection of the power MOS tube in the inverter circuit, improves the safety performance of the inverter circuit, has simple and reliable circuit construction, and saves the research and development cost and research and development time. The voltage regulating comparison circuit is adopted, so that the voltage comparison value is effectively regulated, the comparison threshold value can be regulated according to the protection voltage, and the controllability of the inverter circuit is improved. The isolation and discharge driving circuit is adopted, so that the isolation of strong current signals and weak current signals is realized, and the safety, the anti-interference capability and the driving capability of the whole circuit are improved.
Description
Technical Field
The invention relates to a discharge protection circuit of a power MOS (metal oxide semiconductor) tube in an inverter circuit, belonging to the technical field of electronic circuits.
Background
A MOSFET (metal Oxide Semiconductor Field Effect transistor) is a metal Oxide Semiconductor Field Effect transistor. With the development of electronic power technology, power MOSFETs have good high-frequency performance, low switching loss, high input impedance, low driving power, simple driving circuits, and the like. The inverter circuit is more and more widely applied to a plurality of inverter circuits. However, the MOS tube has no protection function because of small volume. When the phenomena of feedback charging or spike pulse and the like exist, the main circuit generates large current and large voltage, if the protection is not in time, or the voltage and the current are not released and absorbed, the bus voltage exceeds the bearing voltage and the current of the MOS tube, the MOS tube can be burnt, and the research and development cost is greatly improved; even if some inverter circuits have protection circuits, the protected voltage value cannot be adjusted, the protection circuits are simple and inaccurate, and strong current signals and weak current signals cannot be separated, so that continuity of the circuits and safety performance of the circuits are not facilitated.
How to protect MOS pipe in inverter circuit prevents to puncture MOS pipe when big current and big voltage appear in the main circuit.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a discharge protection circuit of a power MOS tube in an inverter circuit, which discharges voltage and current to protect the MOS tube when the inverter circuit works and overvoltage and overcurrent occur, thereby avoiding the damage of the MOS tube and saving the research and development cost.
The purpose of the invention is realized by the following technical scheme:
the leakage protection circuit of the power MOS tube in the inverter circuit comprises a voltage regulation comparison circuit, an isolation leakage driving circuit, a leakage circuit and an absorption circuit;
the absorption circuit is connected between the positive end of the bus of the inverter circuit and the bus ground, and when the bus voltage fluctuates, the bus voltage is stabilized;
when the bus voltage exceeds a set threshold value, the voltage regulating comparison circuit controls the isolation and discharge driving circuit to be started;
after the isolation bleeder drive circuit is started, the bleeder circuit is controlled to be started, the electric energy of the bus is consumed, and the input end signal and the output end signal are isolated.
Preferably, the set threshold is 120% U, and U is a rated voltage of the bus.
Preferably, the absorption circuit comprises one or more parallel first capacitors connected between a bus voltage of the inverter circuit and a bus ground.
Preferably, the absorption circuit further comprises a drain and source protection circuit, and the drain and source protection circuit comprises a first resistor, a second capacitor, and the first resistor and the second capacitor are connected in series between the drain and the source of the power MOS transistor.
Preferably, the absorption circuit further includes a gate and a source protection circuit, the drain and source protection circuit includes a second resistor, a third resistor, and a third capacitor, one end of the third resistor is connected to the source of the power MOS transistor after being connected in parallel with the third capacitor, the other end of the third resistor is connected to one end of the second resistor, and the other end of the second resistor is connected to the gate of the power MOS transistor.
Preferably, the bleeder circuit comprises a bleeder control MOS transistor, a fourth resistor, a fifth resistor, a fourth capacitor and a zener diode; one end of the fifth resistor receives a control signal output by the isolation and discharge driving circuit; one end of the fifth resistor is connected to the bus ground through the fourth capacitor; the other end of the fifth resistor is connected with a grid electrode of the discharge control MOS tube, the voltage stabilizing diode is connected between the grid electrode and a source electrode of the discharge control MOS tube, and the source electrode of the MOS tube is connected to the bus ground; and the drain electrode of the MOS tube is connected to the positive end of the bus bar through a fourth resistor.
Preferably, the voltage regulation comparison circuit comprises a voltage division circuit and a comparison circuit, the voltage division circuit provides a threshold voltage of the comparison circuit, and when the collected bus voltage is greater than the threshold voltage, the comparison circuit outputs a control signal to control the isolation and discharge driving circuit to be started.
Preferably, the isolation and discharge driving circuit comprises a photoelectric coupler and a driving circuit thereof, and when the comparison circuit outputs a control signal at a low level, the photoelectric coupler is turned on and outputs the control signal to the discharge circuit.
Preferably, the photoelectric coupler is a nanosecond photoelectric coupler and is used for isolating strong and weak signals.
Preferably, the first capacitor and the second capacitor are parasitic inductance-free capacitors, and the power MOS tube is close to the protection power MOS tube on the PCB.
Compared with the prior art, the invention has the following advantages:
(1) the invention adopts the discharge protection circuit of the power MOS tube in the inverter circuit, realizes the protection of the power MOS tube in the inverter circuit, improves the safety performance of the inverter circuit, has simple and reliable circuit construction, and saves the research and development cost and the research and development time.
(2) The invention adopts the voltage regulating comparison circuit, realizes effective regulation of the voltage comparison value, can regulate the comparison threshold value according to the protection voltage, and improves the controllability of the inverter circuit.
(3) The invention adopts the isolation and discharge driving circuit, realizes the isolation of strong current signals and weak current signals, improves the safety and anti-interference capability of the whole circuit and improves the driving capability.
(4) The invention adopts the bleeder circuit, realizes the effective absorption of the medium and high voltage of the inverter circuit, improves the protection performance of the inverter circuit, reduces the damage quantity of MOS and lowers the research and development cost.
(5) The invention adopts the bleeder circuit, realizes the timely bleeder of the inverter circuit to the over-high feedback voltage, reduces the probability of MOS breakdown and improves the protection performance of the inverter circuit.
(6) The inverter circuit adopts the absorption circuit, realizes the independent protection function of the power MOS tube in the inverter circuit, improves the safety level of the MOS tube in use, and realizes another protection of the MOS tube in the inverter circuit.
(7) The invention adopts the discharge protection circuit of the power MOS tube in the inverter circuit, realizes triple protection of the power MOS tube in the inverter through the discharge circuit and the absorption circuit, prolongs the service life of the MOS tube, and increases the protection stability.
Drawings
Fig. 1 is a schematic diagram of the bleed protection circuit of the present invention.
Detailed Description
As shown in fig. 1, power MOS transistors Q3 and Q4 in the inverter circuit are MOS transistors to be protected by leakage.
The technical solution of the invention is as follows: a leakage protection circuit of a power MOS tube in an inverter circuit comprises a voltage regulation comparison circuit, an isolation leakage driving circuit, a leakage circuit and an absorption circuit.
In the above bleeder protection circuit of a power MOS transistor in an inverter circuit, the voltage regulation comparator circuit includes resistors R1, R2, R3, R4, and a comparator U1B; the isolation and leakage driving circuit comprises resistors R5, R6, R7, 8 and R9, a diode D1, a triode Q1 and a photoelectric coupling chip U2; the bleeder circuit comprises a capacitor C1, resistors R10, R11 and a voltage regulator tube D2; the absorption circuit comprises resistors R12, R13, R14, R15, R16 and R17, capacitors C2, C3, C4, C5 and C6, and power MOS transistors Q2, Q3 and Q4.
In the above-mentioned bleeder protection circuit of power MOS transistor in inverter circuit, the pressure regulating comparison circuit mainly be used for adjusting the comparative threshold value of busbar voltage according to the demand of oneself and the parameter of MOS transistor, accomplish the accurate control of voltage comparison, make simultaneously with the comparison of busbar voltage and the output of comparison signal, when sampling voltage DCU is greater than threshold voltage, U1B outputs the low level, when sampling voltage DCU is less than threshold voltage, U1B outputs the high level. The resistors R1 and R2 in the circuit are high-precision resistors, so that the error range is reduced. Resistors R3 and R4 in the circuit are used for more accurate comparison control of the comparator.
In the above-mentioned discharge protection circuit of the power MOS transistor in the inverter circuit, the isolation discharge driving circuit is mainly used for making a corresponding response to a comparison signal in the voltage-regulating comparison circuit, and simultaneously performing isolation protection on a strong current signal and a weak current signal through the photoelectric coupler. When the voltage regulating comparison circuit outputs a high level, the triode Q1 is not switched on, the photoelectric coupling chip U2 is not lighted and switched on, and the U2 outputs a low level, which indicates that the bus voltage is not higher than the protection voltage; when the voltage regulating comparison circuit outputs a low level, the triode Q1 is switched on, the photoelectric coupling chip U2 emits light and is switched on, and the U2 outputs a high level, which indicates that the bus voltage is higher than the protection voltage; in the circuit, a diode D1 is a quick recovery diode, the on-resistance is small, resistors R6 and R7 are high-precision resistors, a photoelectric coupler is a quick optical coupler and has certain amplification capacity, and resistors R8 and R9 are current-limiting resistors and are selected according to own parameter requirements.
In the above leakage protection circuit for a power MOS transistor in an inverter circuit, the leakage protection circuit is mainly used for discharging and absorbing a bus voltage when overvoltage is caused by feedback charging or spike pulse, and the like, and protects the MOS transistor in the power circuit, wherein a capacitor C1 is used for absorbing burrs of an output signal of an isolation leakage driving circuit, a resistor R10 is used for driving current limiting, and a voltage regulator D2 is mainly used for protecting the driving signal of the MOS transistor Q2 from overvoltage. The MOS transistor Q2 is used for switching on and off, the transistor should be selected to have extremely small on-resistance and reduced on-loss, and the resistor R11 should be selected to have high power resistance.
The capacitor C2, the resistor R11 and the MOS tube in the absorption circuit form double protection, when overvoltage is small, the capacitor C2 absorbs the overvoltage to protect the overvoltage, and when the overvoltage is large, the MOS tube Q2 is switched on, so that the discharge circuit is started, excessive voltage is discharged, and the MOS tube is subjected to double protection.
In the above leakage protection circuit of the power MOS transistor in the inverter circuit, the absorption circuit is mainly used for voltage inversion and absorption of peak voltage, thereby playing a role in protection. When spike pulse is generated due to the switching-on and switching-off of the MOS transistor, the resistor R14 and the capacitor C5, the resistor R17 and the capacitor C6 respectively form an absorption network, excessive voltage is absorbed, and the power MOS transistors Q3 and Q4 are protected, so that the power MOS transistor is further protected.
In the absorption circuit, the MOS transistors Q3 and Q4 should select devices with small on-resistance, and the resistor R14 and the capacitor C5, and the resistor R17 and the capacitor C6 should select devices with appropriate parameters, so that spike pulses can be better absorbed.
In the discharge protection circuit of the power MOS tube in the inverter circuit, the power MOS tube of the inverter circuit is subjected to triple protection through the discharge circuit and the absorption circuit part, so that the integrity of protection and the reliability of the circuit are improved.
Fig. 1 shows a protection circuit of the present invention, in which power MOS transistors are half-bridge arms, if the protection circuit is an inverter circuit of a full-bridge arm, each bridge arm is connected with one protection circuit of the present invention, and three protection circuits are connected in total to realize protection of all power MOS transistors of three bridge arms.
The above description is only for the best mode of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention.
Those skilled in the art will appreciate that the invention may be practiced without these specific details.
Claims (1)
1. A bleeder protection circuit of a power MOS tube in an inverter circuit is characterized by comprising a voltage regulation comparison circuit, an isolation bleeder driving circuit, a bleeder circuit and an absorption circuit;
the absorption circuit is connected between the positive end of the bus of the inverter circuit and the bus ground (GND2), and stabilizes the bus voltage when the bus voltage fluctuates;
when the bus voltage exceeds a set threshold value, the voltage regulating comparison circuit controls the isolation and discharge driving circuit to be started;
after the isolation bleeder drive circuit is started, the bleeder circuit is controlled to be started, the electric energy of the bus is consumed, and the input end signal and the output end signal are isolated;
the set threshold value is 120% U, and U is the rated voltage of the bus;
the absorption circuit comprises one or more parallel first capacitors (C2) connected between the positive bus terminal of the inverter circuit and the bus ground (GND 2);
the absorption circuit further comprises a drain and source protection circuit, the drain and source protection circuit comprises a first resistor (R14, R17) and a second capacitor (C5, C6) which are connected in series, and the first resistor (R14, R17) and the second capacitor (C5, C6) are connected between the drain and the source of the power MOS tube in series;
the voltage regulation comparison circuit comprises a voltage division circuit and a comparison circuit, the voltage division circuit provides a threshold voltage of the comparison circuit, and when the acquired bus voltage is greater than the threshold voltage, the comparison circuit outputs a control signal to control the isolation and discharge driving circuit to be started;
the bleeder circuit comprises a bleeder control MOS (metal oxide semiconductor) tube (Q2), a fourth resistor (R11), a fifth resistor (R10), a fourth capacitor (C1) and a voltage stabilizing diode (D2); one end of the fifth resistor (R10) receives a control signal output by the isolation and leakage driving circuit; one end of a fifth resistor (R10) is connected to the bus ground (GND2) through a fourth capacitor (C1); the other end of the fifth resistor (R10) is connected with the grid electrode of the leakage control MOS tube (Q2), the voltage stabilizing diode (D2) is connected between the grid electrode and the source electrode of the leakage control MOS tube (Q2), and the source electrode of the leakage control MOS tube (Q2) is connected to the bus ground (GND 2); the drain electrode of the bleeder control MOS tube (Q2) is connected to the positive end of the bus through a fourth resistor (R11);
the absorption circuit further comprises a gate and source protection circuit, the drain and source protection circuit comprises a second resistor (R13, R16), a third resistor (R12, R15) and a third capacitor (C3, C4), one end of the third resistor (R12, R15) is connected with the source of the power MOS tube after being connected with the third capacitor (C3, C4) in parallel, the other end of the third resistor is connected with one end of the second resistor (R13, R16), and the other end of the second resistor (R13, R16) is connected with the gate of the power MOS tube;
the isolation and discharge driving circuit comprises a photoelectric coupler (U2) and a driving circuit thereof, when the comparison circuit outputs a control signal at a low level, the photoelectric coupler (U2) is conducted, and the control signal is output to the discharge circuit; the driving circuit comprises resistors R5, R6, R7, R8, R9, a diode D1, a triode Q1, one ends of resistors R5, R6, R7 and R9 are simultaneously connected with a driving power supply, the other end of a resistor R5 is simultaneously connected with the output end of the voltage regulation comparison circuit and the cathode of the diode D1, the other end of a resistor R6 is simultaneously connected with one end of a resistor R8, the base of the triode Q1 and the anode of the diode D1, the other end of a resistor R7 is connected with the emitter of the triode Q1, the collector of the triode Q1 and the other end of the resistor R8 are simultaneously connected with the input end of a photocoupler (U2), and the common end of the resistor R9, a fifth resistor (R10) and a fourth capacitor (C1) is simultaneously connected with the output end of the photocoupler (U2);
the photoelectric coupler (U2) is a nanosecond photoelectric coupler (U2) and is used for isolating strong and weak signals;
the first capacitor (C2) and the second capacitor (C5, C6) adopt capacitors without parasitic inductances, and are positioned on the PCB close to the power MOS tube to be protected.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711419515.5A CN108134514B (en) | 2017-12-25 | 2017-12-25 | Discharge protection circuit of power MOS tube in inverter circuit |
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| CN201711419515.5A CN108134514B (en) | 2017-12-25 | 2017-12-25 | Discharge protection circuit of power MOS tube in inverter circuit |
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| CN108134514A CN108134514A (en) | 2018-06-08 |
| CN108134514B true CN108134514B (en) | 2020-07-14 |
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| CN109149917A (en) * | 2018-09-05 | 2019-01-04 | 上海华通企业集团有限公司 | A kind of high-voltage capacitance battery alert and automatic discharge circuit |
| CN109347314B (en) * | 2018-10-29 | 2020-12-18 | 陕西航空电气有限责任公司 | High-voltage AC/DC residual current discharge circuit with protection function |
| CN112055936B (en) * | 2020-01-14 | 2022-05-27 | 深圳欣锐科技股份有限公司 | Control discharge circuit, switching power supply and control discharge equipment |
| CN113839369B (en) * | 2021-10-28 | 2024-01-30 | 山东新一代信息产业技术研究院有限公司 | Driver MOS tube parallel protection circuit of robot |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104849644A (en) * | 2014-12-10 | 2015-08-19 | 北汽福田汽车股份有限公司 | IGBT state detecting circuit and IGBT state detecting method |
| CN206283410U (en) * | 2016-11-23 | 2017-06-27 | 湖南继善高科技有限公司 | High-power transmitter based on phase shifting control |
| CN107370344A (en) * | 2017-07-26 | 2017-11-21 | 阳光电源股份有限公司 | The chopper self checking method and controller of a kind of fan converter |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2886894Y (en) * | 2006-04-19 | 2007-04-04 | 山东新风光电子科技发展有限公司 | A protection device for automatic bus voltage deviation regulation |
| CN103414348B (en) * | 2013-07-11 | 2015-09-23 | 杭州可靠性仪器厂 | High frequency PWM technique two-way DC/DC energy exchange circuit |
| CN104868708A (en) * | 2015-06-05 | 2015-08-26 | 卢雪明 | Power-on buffering and bus discharge circuit for frequency converter |
| CN106787657A (en) * | 2016-12-29 | 2017-05-31 | 上海新时达电气股份有限公司 | Vehicle-mounted drive control device capacitor discharging circuit |
-
2017
- 2017-12-25 CN CN201711419515.5A patent/CN108134514B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104849644A (en) * | 2014-12-10 | 2015-08-19 | 北汽福田汽车股份有限公司 | IGBT state detecting circuit and IGBT state detecting method |
| CN206283410U (en) * | 2016-11-23 | 2017-06-27 | 湖南继善高科技有限公司 | High-power transmitter based on phase shifting control |
| CN107370344A (en) * | 2017-07-26 | 2017-11-21 | 阳光电源股份有限公司 | The chopper self checking method and controller of a kind of fan converter |
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