CN102723935A - Self-turnoff component driving protection circuit - Google Patents
Self-turnoff component driving protection circuit Download PDFInfo
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- CN102723935A CN102723935A CN2012101584735A CN201210158473A CN102723935A CN 102723935 A CN102723935 A CN 102723935A CN 2012101584735 A CN2012101584735 A CN 2012101584735A CN 201210158473 A CN201210158473 A CN 201210158473A CN 102723935 A CN102723935 A CN 102723935A
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Abstract
The invention relates to a self-turnoff component driving protection circuit which particularly comprises positive and negative power supplies, an optical coupler isolating circuit, a control circuit, an anti-saturation circuit, a high power transistor and a composite buffer circuit, wherein a control signal current is subjected to resistance-capacitance filtering and is subsequently input into the anode of a primary light emitting diode of the optical coupler component; an emitter electrode of a secondary phototriode of the optical coupler component is directly connected with the input end of a chip UAA4002 in the control circuit; the positive power supply is connected with the collector electrode of the phototriode through a switch; the positive and negative power supplies are respectively connected with positive and negative power supply pins of the chip UAA4002 and are respectively connected with the collector electrodes of subsequent upper and lower pair tubes, the control circuit is connected with the anti-saturation circuit through a current-limiting resistor; the anti-saturation circuit is connected in parallel between the base electrode and the collector electrode of the high power transistor; and the composite buffer circuit is directly connected in parallel between the collector electrode and the emitter electrode of the high power transistor; thereby a self-turnoff component driving protection circuit which is simple in circuit structure, complete in function, high in reliability, small in switch consumption and rapid in protection response is provided.
Description
Technical field
The invention belongs to electric and electronic technical field, be specifically related to a kind of self-turn-off device Drive Protecting Circuit.
Background technology
The effect of self-turn-off device Drive Protecting Circuit such as high power transistor is the control signal electric current that control circuit is exported to be amplified to be enough to guarantee that self-turn-off device can reliably turn on and off.The base drive mode of high power transistor directly influences its working condition; Can make some characterisitic parameter improve or come to harm; Drive Protecting Circuit should be mated with main circuit each other; Guarantee that high power transistor is in the quasi saturation state at any time in conduction period, can add enough big reversed bias voltage rapidly during shutoff, and enough defencive functions are arranged.At present, high power transistor adopts the base drive circuit of band reverse bias perhaps to be with the base drive circuit topological structure of overload, short-circuit protection more.Clamp diode and potential compensation diode can make high power transistor when conducting, be in critical saturation condition all the time in the former circuit; Voltage-stabiliser tube and back biased diode can make high power transistor when ending, quicken to turn-off; Confirm but the voltage stabilizing value of voltage-stabiliser tube is difficult; Cross low anti-DeGrain partially, too highly then can damage power component, and possibly produce the high parasitic vibration.The thermal capacity of self-turn-off devices such as high power transistor is generally all smaller; Overcurrent capability is very low; When it runs on inversion system; Because self longer turn-off time, causes the brachium pontis short trouble easily, and the sensitivity that latter's circuit adopts the state recognition protection to monitor down at slight overload situations is lower.Above discrete component Drive Protecting Circuit exists all that element is many, complicated circuit, the not good enough and awkward shortcoming of stability.
Summary of the invention
To the problems referred to above, the present invention proposes a kind of self-turn-off device Drive Protecting Circuit, provides that a kind of circuit structure is simple, the Drive Protecting Circuit of perfect in shape and function, reliability is high, switching loss is little, response speed is fast self-turn-off devices such as high power transistor.
The objective of the invention is to realize through following technical scheme:
A kind of self-turn-off device Drive Protecting Circuit, its improvements are that said Drive Protecting Circuit comprises positive-negative power, optical coupling isolation circuit, control circuit, anti saturation circuit, high power transistor, composite buffering circuit; The circuit control signal is imported the positive pole of the former side's light-emitting diode of optocoupler behind capacitance-resistance filter; The negative pole resistance grounded of light-emitting diode; The emitter of optocoupler pair side phototriode directly connects the input of control circuit chips UAA4002; And connect negative supply through resistance and switch; Positive supply connects the collector electrode of phototriode through switch, and positive-negative power connects the positive-negative power pin of chip UAA4002 respectively, and connects follow-up two-way up and down respectively to the collector electrode of pipe; Two-way connects anti saturation circuit through current-limiting resistance respectively again to pipe behind capacitance-resistance filter up and down; Anti saturation circuit is connected in parallel between the base stage and collector electrode of high power transistor, and control circuit chips UAA4002 passes through to connect the base stage of two-way to managing up and down respectively behind resistance and the follow-up capacitance-resistance filter, adjusts and hold the emitter common ground through peripheral circuit and high power transistor in its each inside; Negative supply is connected with the emitter of high power transistor with resistance through switch, and the composite buffering circuit is directly parallel between the collector and emitter of high power transistor.
Second optimized technical scheme provided by the invention is: said optical coupling isolation circuit comprises capacitance-resistance filter link, optocoupler, resistance; The capacitance-resistance filter link adopts the resistance capacitance parallel-connection structure; The positive pole that connects the former side's light-emitting diode of optocoupler then, the negative pole of light-emitting diode are through grounding through resistance, and the collector electrode of optocoupler pair side phototriode connects positive supply through switch; Emitter is connected negative supply through resistance with switch, and directly connects the subsequent control circuit.
The 3rd optimized technical scheme provided by the invention is: said control circuit mainly comprises chip UAA4002 and peripheral circuit thereof, two-way is to pipe and adjunct circuit thereof up and down; Chip UAA4002 connects the base stage of two-way to managing up and down respectively through resistance and capacitance-resistance filter link; Its positive-negative power pin directly connects positive-negative power respectively; Input directly connects the emitter of aforementioned optocoupler pair side phototriode; End is adjusted respectively through the emitter common ground of chip periphery circuit and high power transistor in each inside; And two-way connects positive-negative power respectively to the emitter of managing up and down, and collector electrode connects follow-up anti saturation circuit through current-limiting resistance through the capacitance-resistance filter link respectively again.
The 4th optimized technical scheme provided by the invention is: said anti saturation circuit adopts Bake clamp circuit topological structure; Be directly parallel between the base stage and collector electrode of high power transistor; Be connected through current-limiting resistance between the aforementioned control circuit, it comprises three branch roads, article one branch road comprises a clamp diode; This diode adopts fast recovery diode, connects the collector electrode of aforementioned current-limiting resistance and high power transistor; The second branch road comprises the potential compensation diode of two series connection, and this diode all adopts fast diode, connects the base stage of aforementioned current-limiting resistance and high power transistor; Article three, branch road comprises an antiparallel diode, and is directly parallelly connected with aforementioned second branch road.
The 5th optimized technical scheme provided by the invention is: said composite buffering circuit adopts to open and absorbs circuit and turn-off the composite construction that absorbs circuit; Be directly parallel between the collector and emitter of high power transistor; It comprises inductance, resistance, electric capacity, diode; Inductance is connected on the collector electrode of high power transistor, is attempted by after resistance, the capacitances in series on the branch road that high power transistor and inductance form, and diode is connected across between the branch road of branch road that high power transistor and inductance form and resistance capacitance composition; Open the absorption circuit with inductance, resistance composition, form with resistance, electric capacity again simultaneously and turn-off the absorption circuit.
The present invention is owing to adopt technique scheme, thereby possesses following beneficial effect:
1, the present invention is because the control signal electric current is imported control chip again behind optical coupling isolation circuit; Carry out capacitance-resistance filter in advance, the current waveform signal stable ideal can realize that optimization drives; Can be subsequent conditioning circuit simultaneously resistance-capacitance protection is provided; Effectively suppress overvoltage and vibration, and optocoupler makes the isolation on electric of Drive Protecting Circuit and logical circuit, control circuit, improved the coefficient of safety of integrated circuit.2, the present invention is owing to adopt positive-negative power supply and the bridge architecture of follow-up two-way up and down to managing; But two-way is to pipe about the output signal stabilized driving of chip UAA4002; Thereby recommend the electric current that output provides the high power transistor base stage to open and turn-off; This drive current is enough big and more stable, and two-way is connected to speed-up capacitor to pipe up and down, thereby can provide the big electric current of instant shut-in significantly to improve switching speed to high power transistor.3, the present invention is owing to adopt chip UAA4002 in the control circuit; This chip possesses input interface, output interface, protection three big functions, and input interface can adopt level input mode or pulse input mode, and output interface forward maximum output current can be regulated to guarantee that high power transistor always is in the quasi saturation state automatically; Reverse maximum output current can guarantee that high power transistor turn-offs fast; In addition, chip UAA4002 realizes overcurrent protection through the restriction emitter current, realizes the desaturation protection through the detected set electrode potential; Fixed delay with prevent to lead directly to, short circuit or misoperation; After chip temperature surpasses regulation numerical value, can cut off the output pulse automatically, recover output when chip temperature drops to limiting value automatically when following, in a word; The defencive function of chip UAA4002 is complete; Comprise collector current restriction, prevent that desaturation, ON time from controlling at interval, supply voltage monitoring, time delay, heat protection etc., it uses the structure of having simplified Drive Protecting Circuit greatly, has improved stability, flexibility and the integrated level of system.4, the present invention can be used as the base current sampling resistor, easy to detect, real-time response, and the fail safe that has improved circuit simultaneously owing to be connected to current-limiting resistance between control circuit and the anti saturation circuit.5, among the present invention anti saturation circuit owing to adopt Bake clamp circuit structure; This circuit is equipped with fixing negative base current or fixing Base-Emitter-reverse biased; Can obtain comparatively desirable driving effect, both can provide enough big base current to make high power transistor be in saturated or the quasi saturation state, thereby reduce the safety that on-state loss guarantees high power transistor; Improved simultaneously the efficient of system again; And that adopts in this circuit is fast recovery diode and fast diode, has further improved the switching frequency of high power transistor, in addition; Clamp diode is equivalent to the effect of overflow valve; Can make excessive base drive electric current not flow into base stage, the number adjustment of series connection potential compensation diode can prevent that high power transistor from getting into degree of depth saturation condition, and the reverse parallel connection diode then provides path for the biasing of high power transistor turn-off reversal.6, composite buffering circuit system opens the combination that absorbs circuit and turn-off the absorption circuit among the present invention; Simplified circuit structure, inductance has delayed the growth rate of collector current on it, and when electric current sharply increases, can produce big pressure drop and descend rapidly when making the collection emitter voltage in conducting; Resistance can make high power transistor shutoff subsequent flows electric current decay rapidly; And capacitance discharges electric current can limit conducting the time, but diode then isolation resistance to the bypass effect of inductance, electric capacity, and electric capacity rate of climb of voltage between the collection emitter-base bandgap grading can delay to turn-off the time; Thereby improved the fail safe of circuit greatly, reduced power loss.7, self-turn-off device Drive Protecting Circuit provided by the invention is simple in structure, is easy to realize, reliability is high, drives satisfactory for resultly, and system effectiveness is high, and response speed is fast, regulates flexibly, and defencive function is complete, has broad application prospects and market potential.
Description of drawings
Fig. 1 is an overall structure sketch map of the present invention;
Fig. 2 is that self-turn-off device Drive Protecting Circuit of the present invention realizes sketch map;
Fig. 3 is an optical coupling isolation circuit structural representation of the present invention;
Fig. 4 is an anti saturation circuit structural representation of the present invention;
Fig. 5 is a composite buffering electrical block diagram of the present invention.
Embodiment
Do further detailed description below in conjunction with the accompanying drawing specific embodiments of the invention.
Like Fig. 1, shown in Figure 2, the present invention includes positive-negative power, optical coupling isolation circuit, control circuit, anti saturation circuit, high power transistor, composite buffering circuit.
The circuit control signal is imported the positive pole of the former side's light-emitting diode of optocoupler O1 behind R1, C1 capacitance-resistance filter; The negative pole of light-emitting diode is through resistance R 2 ground connection; The emitter of optocoupler O1 pair side phototriode directly connects the input of control circuit chips UAA4002; And meet negative supply-Vcc through resistance R 3 and switch S 2; Positive supply Vcc connects the collector electrode of phototriode through switch S 1, and positive-negative power connects the positive-negative power pin of chip UAA4002 respectively, and connects the collector electrode of follow-up two-way up and down to pipe VT1, VT2 respectively; Two-way is to managing VT1, VT2 respectively through capacitance-resistance filter (R13, C8 up and down; R14, C9) after connect anti saturation circuit (VD1, VD2, VD3, VD4) through current-limiting resistance R15 again, anti saturation circuit is connected in parallel between the base stage and collector electrode of high power transistor GTR, control circuit chips UAA4002 is through resistance R 9, R10 and follow-up capacitance-resistance filter (R8, C6; R11, C7) after connect up and down two-way respectively to the base stage of pipe VT1, VT2; End is adjusted respectively through the emitter common ground of chip periphery circuit and high power transistor GTR in its each inside, and negative supply-Vcc is connected with the emitter of high power transistor with resistance R 16 through switch S 2, and composite buffering circuit (Ls, Rs, VDs, Cs) is directly parallel between the collector and emitter of high power transistor GTR.
In the foregoing description; Like Fig. 2, shown in Figure 3, the circuit control signal code is imported the positive pole of the former side's light-emitting diode of optocoupler O1 again behind R1, C1 capacitance-resistance filter, and R1, the C1 characteristic of utilizing the electric capacity voltage not suddenly change can effectively suppress overvoltage here; Resistance R 1 can consume part overvoltage energy; Subsequent conditioning circuit is played the effect of resistance-capacitance protection, suppress vibration simultaneously, and guarantee that optocoupler O1 is operated in the range of linearity.Optocoupler O1 isolates Drive Protecting Circuit and logical circuit, control circuit on electric; The negative pole of former side's light-emitting diode is through resistance R 2 ground connection; The emitter of pair side's phototriode meets negative supply-Vcc through resistance R 3 and switch S 2, has improved the coefficient of safety of integrated circuit.
Among above-mentioned each embodiment; Like Fig. 2, shown in Figure 3; The emitter of the optocoupler O1 pair side phototriode in the optical coupling isolation circuit directly connects the input of control circuit chips UAA4002; Positive-negative power Vcc ,-Vcc connects the positive-negative power pin of chip UAA4002 respectively, and connects the collector electrode of follow-up two-way up and down to pipe VT1, VT2 respectively, thereby be chip UAA4002 with two-way up and down to manage VT1, VT2 supplies power.Chip UAA4002 is the core devices of entire circuit; Possess functions such as input interface, output interface, protection; Its input interface can carry out necessary coupling with aforementioned control signal and the inner logic processor of chip UAA4002, and it is the level input mode that the termination high level is selected in input, and connecing low level is the pulse input mode; The effect of output interface provides drive current; The forward maximum output current can be regulated to guarantee that high power transistor GTR always is in the quasi saturation state automatically, and reverse maximum output current can guarantee that high power transistor GTR turn-offs fast, and positive and negative two output currents all can be expanded through external transistor; Above characteristic has been simplified the structure of Drive Protecting Circuit greatly, has improved stability, flexibility and the integrated level of system.Chip UAA4002 possesses abundant defencive function, wherein have collector current restriction, prevent that desaturation, ON time from controlling at interval, supply voltage monitoring, time delay, heat protection etc.Chip UAA4002 utilizes the method for restriction emitter current to realize overcurrent protection, and when shunt detected electric current above setting, the comparator state changed, and logic processor sends the signal that blocks base stage.There is resistance in the output end voltage forward position of chip UAA4002 with respect to the termination of adjusting of input terminal voltage forward position time of delay, thus can make before and after the control voltage along between can keep the set time of 1～20 μ s to postpone, prevent straight-through, short circuit or misoperation.After the temperature of chip UAA4002 surpasses regulation numerical value, can cut off the output pulse automatically, and when chip temperature drop to limiting value when following automatically recovery export.In addition, chip UAA4002 adjusts each inside end respectively through the emitter common ground of chip periphery circuit and high power transistor, has improved the stability of system, and can realize the desaturation protection through the detected set electrode potential.In a word, chip UAA4002 and peripheral circuit thereof have constituted the core of large scale integration base drive circuit, and defencive function is complete, and technical performance is superior.
Among above-mentioned each embodiment; Like Fig. 2, shown in Figure 3; Control circuit chips UAA4002 is through resistance R 9, R10 and follow-up capacitance-resistance filter (R8, C6; R11, C7) after connect up and down two-way respectively to the base stage of pipe VT1, VT2, consistent with aforementioned capacitance-resistance link, the resistance here, electric capacity and up and down two-way all have filtering, resistance-capacitance protection to managing VT1, R13 that VT2 connects, C8, R14, C9, prevent the function of vibrating.Two-way respectively by positive-negative power supply, is recommended the electric current that output provides high power transistor to open and turn-off to pipe VT1, VT2 up and down, and wherein C8, C9 are speed-up capacitor, can provide instant shut-in big electric current, thereby improve switching speed.
Among above-mentioned each embodiment; Like Fig. 2, shown in Figure 4, control circuit connects anti saturation circuit (VD1, VD2, VD3, VD4) through current-limiting resistance R15, and this resistance can be simultaneously as the base current sampling resistor; Easy to detect, real-time response have improved the security performance of circuit.This anti saturation circuit is connected in parallel between the base stage and collector electrode of high power transistor GTR; Adopt Bake clamp circuit structure; This circuit topology is equipped with fixing negative base current or fixing Base-Emitter-reverse biased, can obtain comparatively desirable driving effect, both can provide enough big base current to make high power transistor GTR be in saturated or the quasi saturation state; Thereby reduce the safety that on-state loss guarantees high power transistor GTR; Simultaneously improved the efficient of system again, and adopt in this circuit be fast recovery diode and fast diode, further improved the switching frequency of high power transistor GTR.Wherein clamp diode VD1 is equivalent to the effect of overflow valve, can make excessive base drive electric current not flow into base stage.The number that changes the potential compensation diode (VD2, VD3) of connecting in the VD2 branch road can improve the performance of circuit.When very big,, can suitably increase the number of diodes of VD2 branch road in the case like collector current because the pressure drop increase of collector electrode internal resistance two ends can make high power transistor GTR be in degree of depth saturation condition.Required reverse when turn-offing by biasing for satisfying high power transistor GTR, in the anti saturation circuit inverse parallel diode VD4, thereby make reverse bias that path arranged.
Among above-mentioned each embodiment, like Fig. 2, shown in Figure 5, the composite buffering circuit is directly parallel between the collector and emitter of high power transistor GTR.This composite buffering circuit belongs to opens the combination that absorbs circuit and turn-off the absorption circuit, and wherein Ls, Rs, VDs composition are opened the absorption circuit, and Rs, VDs, Cs form shutoff and absorb circuit, have simplified circuit structure.In opening the absorption circuit; The inductance L s that connects with high power transistor can delay the growth rate of collector current; And when electric current sharply increases, can produce big pressure drop and descend rapidly when making the collection emitter voltage in conducting; And resistance R s can make high power transistor GTR turn-off the subsequent flows electric current to decay rapidly, but diode VDs then isolation resistance Rs to the bypass effect of inductance L s.In turn-offing the absorption circuit; Capacitor C s voltage can not be suddenlyd change; The rate of climb of voltage between the collection emitter-base bandgap grading in the time of can delaying to turn-off makes between the collection emitter-base bandgap grading voltage reach that collector current diminishes before the peak value, and resistance R s capacitance discharges electric current can limit conducting the time; But diode VDs then isolation resistance Rs to the bypass effect of capacitor C s, to make full use of the pressure stabilization function of electric capacity.The composite buffering circuit topological structure has improved the fail safe of integrated circuit greatly, has reduced power loss.
Should be noted that at last: above embodiment is only in order to technical scheme of the present invention to be described but not to the restriction of its protection range; Although the present invention has been carried out detailed explanation with reference to the foregoing description; The those of ordinary skill in affiliated field is to be understood that: those skilled in the art still can carry out all changes, revise or be equal to replacement to its embodiment after reading the present invention; These changes, modification perhaps are equal to replacement, and it is all within the claim scope that its invention is awaited the reply.
Claims (5)
1. a self-turn-off device Drive Protecting Circuit is characterized in that, said Drive Protecting Circuit comprises positive-negative power, optical coupling isolation circuit, control circuit, anti saturation circuit, high power transistor, composite buffering circuit; The circuit control signal is imported the positive pole of the former side's light-emitting diode of optocoupler behind capacitance-resistance filter; The negative pole resistance grounded of light-emitting diode; The emitter of optocoupler pair side phototriode directly connects the input of control circuit chips UAA4002; And connect negative supply through resistance and switch; Positive supply connects the collector electrode of phototriode through switch, and positive-negative power connects the positive-negative power pin of chip UAA4002 respectively, and connects follow-up two-way up and down respectively to the collector electrode of pipe; Two-way connects anti saturation circuit through current-limiting resistance respectively again to pipe behind capacitance-resistance filter up and down; Anti saturation circuit is connected in parallel between the base stage and collector electrode of high power transistor, and control circuit chips UAA4002 passes through to connect the base stage of two-way to managing up and down respectively behind resistance and the follow-up capacitance-resistance filter, adjusts and hold the emitter common ground through peripheral circuit and high power transistor in its each inside; Negative supply is connected with the emitter of high power transistor with resistance through switch, and the composite buffering circuit is directly parallel between the collector and emitter of high power transistor.
2. a kind of self-turn-off device Drive Protecting Circuit as claimed in claim 1; It is characterized in that; Said optical coupling isolation circuit comprises capacitance-resistance filter link, optocoupler, resistance, and the capacitance-resistance filter link adopts the resistance capacitance parallel-connection structure, connects the positive pole of the former side's light-emitting diode of optocoupler then; The negative pole of light-emitting diode passes through grounding through resistance; The collector electrode of optocoupler pair side phototriode connects positive supply through switch, and emitter is connected negative supply through resistance with switch, and directly connects the subsequent control circuit.
3. a kind of self-turn-off device Drive Protecting Circuit as claimed in claim 1; It is characterized in that; Said control circuit mainly comprises chip UAA4002 and peripheral circuit thereof, two-way is to pipe and adjunct circuit thereof up and down; Chip UAA4002 connects the base stage of two-way to managing up and down respectively through resistance and capacitance-resistance filter link; Its positive-negative power pin directly connects positive-negative power respectively, and input directly connects the emitter of aforementioned optocoupler pair side phototriode, adjusts and hold respectively the emitter common ground through chip periphery circuit and high power transistor in each inside; And two-way connects positive-negative power respectively to the emitter of managing up and down, and collector electrode connects follow-up anti saturation circuit through current-limiting resistance through the capacitance-resistance filter link respectively again.
4. a kind of self-turn-off device Drive Protecting Circuit as claimed in claim 1 is characterized in that, said anti saturation circuit adopts Bake clamp circuit topological structure; Be directly parallel between the base stage and collector electrode of high power transistor; Be connected through current-limiting resistance between the aforementioned control circuit, it comprises three branch roads, article one branch road comprises a clamp diode; This diode adopts fast recovery diode, connects the collector electrode of aforementioned current-limiting resistance and high power transistor; The second branch road comprises the potential compensation diode of two series connection, and this diode all adopts fast diode, connects the base stage of aforementioned current-limiting resistance and high power transistor; Article three, branch road comprises an antiparallel diode, and is directly parallelly connected with aforementioned second branch road.
5. a kind of self-turn-off device Drive Protecting Circuit as claimed in claim 1; It is characterized in that; Said composite buffering circuit adopts to open and absorbs circuit and turn-off the composite construction that absorbs circuit; Be directly parallel between the collector and emitter of high power transistor, it comprises inductance, resistance, electric capacity, diode, and inductance is connected on the collector electrode of high power transistor; Be attempted by after resistance, the capacitances in series on the branch road of high power transistor and inductance composition; Diode is connected across between the branch road that branch road that high power transistor and inductance form and resistance capacitance form, and forms with inductance, resistance and opens the absorption circuit, forms to turn-off with resistance, electric capacity again simultaneously to absorb circuit.
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Cited By (9)
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| CN103872909A (en) * | 2014-03-28 | 2014-06-18 | 珠海万力达电气股份有限公司 | Optical fiber drive circuit |
| CN104699317A (en) * | 2015-04-01 | 2015-06-10 | 上海中航光电子有限公司 | Array substrate, display panel and display device |
| CN104753512A (en) * | 2015-01-09 | 2015-07-01 | 中国科学院合肥物质科学研究院 | High-speed switch modulating system used for counting photomultiplier |
| CN106996586A (en) * | 2017-05-18 | 2017-08-01 | 浙江帅康电气股份有限公司 | Fresh air linkage controller and the range hood using the linkage controller |
| CN107979362A (en) * | 2016-10-25 | 2018-05-01 | 中惠创智（深圳）无线供电技术有限公司 | A kind of circuit system and power device Drive Protecting Circuit |
| CN109564264A (en) * | 2018-10-31 | 2019-04-02 | 深圳市汇顶科技股份有限公司 | Test macro |
| CN109936349A (en) * | 2019-03-29 | 2019-06-25 | 吕建华 | A kind of design and application improving electronic power switch devices switch speed |
| CN111431519A (en) * | 2020-04-17 | 2020-07-17 | 贵州振华群英电器有限公司（国营第八九一厂） | Small-packaged high-power solid relay |
| CN112327985A (en) * | 2020-11-06 | 2021-02-05 | 中国电子科技集团公司第二十四研究所 | Low dropout linear voltage stabilizing circuit, low dropout linear voltage stabilizer and electronic chip |
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| CN103872909A (en) * | 2014-03-28 | 2014-06-18 | 珠海万力达电气股份有限公司 | Optical fiber drive circuit |
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| CN107979362A (en) * | 2016-10-25 | 2018-05-01 | 中惠创智（深圳）无线供电技术有限公司 | A kind of circuit system and power device Drive Protecting Circuit |
| CN106996586A (en) * | 2017-05-18 | 2017-08-01 | 浙江帅康电气股份有限公司 | Fresh air linkage controller and the range hood using the linkage controller |
| CN106996586B (en) * | 2017-05-18 | 2023-07-28 | 浙江帅康电气股份有限公司 | Fresh air linkage controller and range hood using same |
| CN109564264A (en) * | 2018-10-31 | 2019-04-02 | 深圳市汇顶科技股份有限公司 | Test macro |
| US11486955B2 (en) | 2018-10-31 | 2022-11-01 | Shenzhen GOODIX Technology Co., Ltd. | Test system |
| CN109936349A (en) * | 2019-03-29 | 2019-06-25 | 吕建华 | A kind of design and application improving electronic power switch devices switch speed |
| CN111431519A (en) * | 2020-04-17 | 2020-07-17 | 贵州振华群英电器有限公司（国营第八九一厂） | Small-packaged high-power solid relay |
| CN112327985A (en) * | 2020-11-06 | 2021-02-05 | 中国电子科技集团公司第二十四研究所 | Low dropout linear voltage stabilizing circuit, low dropout linear voltage stabilizer and electronic chip |
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Application publication date: 20121010 |