CN2221267Y - Device for protecting power semiconductor device - Google Patents
Device for protecting power semiconductor device Download PDFInfo
- Publication number
- CN2221267Y CN2221267Y CN94222512U CN94222512U CN2221267Y CN 2221267 Y CN2221267 Y CN 2221267Y CN 94222512 U CN94222512 U CN 94222512U CN 94222512 U CN94222512 U CN 94222512U CN 2221267 Y CN2221267 Y CN 2221267Y
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- China
- Prior art keywords
- power semiconductor
- comparator
- overcurrent
- transducer
- utility
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
The utility model relates to a device which is used for protecting a power semiconductor device 1 (IGBT, MOSFET, VMOS, SIT, SITH, MCT, etc.). The utility model is composed of a comparator 2, a thermal resistor 10, a driver 13 and a diode 14. Operating values which protect the over currents of the power semiconductor device 1 are matched with tolerance values. Applied currents and availability are improved at normal temperature. The utility model can accurately detect over currents through monitoring the on-state voltage drop of IGBT1, and simultaneously can protect the over currents and the over heat of the power semiconductor device 1. The utility model has the advantages of simple structure, low cost and easy installation, and is suitable for motor speed-regulating controllers, inverters, high-frequency heating power supplies, uninterrupted power supplies, reversed welding machines, switch power supplies, quick chargers, induction cookers, etc.
Description
The present invention relates to protect power semiconductor 1 (as IGBT, MOSFET, VMOS, SIT, SITH, MCT) not by the device of overload (as overcurrent) damage.
The device of existing protection power semiconductor 1 overcurrent; device described in 93 years 5 phases of " electric automatization " magazine " with the single tube GTR direct current chopping regulating speed system of a UAA4002 driving " literary composition; by to the detection of power semiconductor 1 overcurrent, relatively realize overcurrent protection, its overcurrent protection operating value is temperature independent.Because the amplitude that the tolerance value of 1 pair of overcurrent of power semiconductor changes with its variations in temperature very greatly, always there are big gap in the operating value of protection power semiconductor 1 overcurrent and its tolerance value to overcurrent.Especially when the on-state voltage drop by monitoring power semiconductor 1 comes detection of excessive current; not obvious with the variation of overcurrent because of the on-state voltage drop of power semiconductor 1 (as IGBT), the operating value of protection power semiconductor 1 overcurrent is just more difficult to coincide with its tolerance value to overcurrent.
The objective of the invention is to release a kind of overcurrent operating value of power semiconductor 1 of protecting can coincide with temperature variant overcurrent tolerance value, also can accurately protect the device of power semiconductor 1 overcurrent by the on-state voltage drop of monitoring power semiconductor 1 (as IGBT).
The present invention protects the device of power semiconductor 1; include the device 3 of comparator 2, detection power semiconductor device 1 overcurrent, the transducer 4 of detection power semiconductor device 1 temperature; the output of comparator 2 is direct or pass through the control utmost point that controller 5 connects power semiconductors 1, and device 3 is connected with the input of transducer 4 with comparator 2.The signal interaction of reflection overcurrent on the signal of reflection temperature and the device 3 on the transducer 4; the variation that the operating value of comparator 2 protection power semiconductors 1 overcurrent is followed with the overcurrent tolerance value of power semiconductor 1 variations in temperature changes; power semiconductor 1 is under all temps; comparator 2 all moves when the overcurrent of power semiconductor 1 surpasses it in the tolerant overcurrent value of following of this temperature, and directly or by controller 5 protects power semiconductors 1.Device 3 among the present invention can directly or by electronic component (as resistance 6) be connected with the same input of comparator 2 or be connected with two inputs of comparator 2 respectively with transducer 4.Device 3 can be connected with transducer 4 series connection or by electronic component (as resistance 7).Device 3 can be current sensor (as resistance 8 or a hall device 9).Transducer 4 can be temperature-sensitive element (as thermistor 10 or a PTC element 11).Device 3 or transducer 4 can be assembling device (as thermistor 10 and 11 combinations of PTC element).Controller 5 can be electronic component (as resistance 12) or driver 13 or comprise resistance 12.Comparator 2 can be produced in controller 5 or the driver 13.
The present invention protects the transducer 4 in the device of power semiconductor 1 can be connected between the end (as collector electrode or drain electrode) and device 3 of power semiconductor 1, and the other end of device 3 can be directly or connected the input of comparator 2 by electronic component (as resistance 6).Device 3 can be diode 14 or resistance.Comparator 2 comes detection of excessive current by the on-state voltage drop of diode 14 or resistance and transducer 4 monitoring power semiconductors 1; the signal of reflection power semiconductor 1 temperature and stack of on-state voltage drop signal or effect on the transducer 4, the variation that makes comparator 2 protect the operating value of power semiconductors 1 overcurrent to follow with the overcurrent tolerance value of power semiconductor 1 variations in temperature changes.Because the temperature of power semiconductor 1 rises with the increase of electric current; the signal of reflection power semiconductor 1 temperature and the signal of its on-state voltage drop stack change more obvious with overcurrent, the operating value of comparator 2 protection power semiconductors 1 overcurrent can be set accurately.Power semiconductor 1 at various temperatures, comparator 2 can both move when the overcurrent of power semiconductor 1 surpasses it in the tolerant overcurrent value of following of this temperature, directly or by controller 5 protects power semiconductors 1.Transducer ground in the said apparatus can be connected another input of comparator 2, has above-mentioned effect equally.
Select transducer 4 for use, can make device of the present invention can protect the overcurrent of power semiconductor 1 and overheated simultaneously.Device of the present invention also can be produced in the integrated circuit.
Compare with existing apparatus, the beneficial effect of apparatus of the present invention is: the operating value of protection power semiconductor 1 overcurrent coincide with the overcurrent tolerance value with its variations in temperature, but power semiconductor 1 running current value is at normal temperatures greatly increased, and the utilance of power semiconductor 1 is improved; On-state voltage drop by monitoring power semiconductor 1 (as IGBT) comes the operating value of detection of excessive current can set accurately.Device of the present invention is simple structure not only, and is cheap, can also protect the overcurrent of power semiconductor 1 and overheated simultaneously.
Fig. 1 is a kind of block diagram of apparatus of the present invention, and Fig. 2 is another block diagram of contrive equipment, and Fig. 3,4,5,6 is respectively four kinds of embodiment circuit diagrams of apparatus of the present invention.
In apparatus of the present invention of Fig. 1, the transducer 4 direct (A line) of the device 3 of detection power semiconductor device 1 overcurrent and detection power semiconductor device 1 temperature or be connected (C line) with the same input of comparator 2 or be connected (D line) with two inputs of comparator 2 respectively by electronic component (resistance 6) (B line), the output of comparator 2 be (E line) or be connected with the control utmost point of power semiconductor 1 by controller 5 (F line) directly.
In apparatus of the present invention of Fig. 2, transducer 4 is connected between the end (as collector electrode or drain electrode) and device 3 of power semiconductor 1, the other end of device 3 is (A line) or connect the input of comparator 3 by electronic component (resistance 6) (B line) directly, and all the other are same Fig. 1 partly.
In apparatus of the present invention of Fig. 3, transducer 4 by thermistor 10 and 11 combinations of PTC element is connected between the end (collector electrode) and device 3 (diode 14) of power semiconductor 1 (IGBT), the other end of diode 14 connects the input of comparator 2 by electronic component (resistance 6), the output of comparator 2 passes through the control utmost point that controller 5 (resistance 12 and driver 13 " integrated circuit IR2125 ") is connected IGBT1, and comparator 2 is produced among the IR2125.Comparator 2 comes detection of excessive current by the on-state voltage drop of diode 14, PTC element 11, thermistor 10 monitoring IGBT1; the voltage signal of reflection IGBT1 temperature and the stack of its on-state voltage drop signal on thermistor 10 and the PTC element 11, the variation that makes comparator 2 protect the operating value of IGBT1 overcurrent to follow with the overcurrent tolerance value of IGBT1 variations in temperature changes.Because the temperature of IGBT1 significantly rises when the IGBT1 overcurrent, and comparator 2 can be moved when the IGBT1 overcurrent exactly, by IR212S and resistance 12 protection IGBT1.The characteristic of PTC element 11 marked change when IG8T1 is overheated also makes comparator 2 actions, and IGBT1 is overheated in protection.Thermistor 10 is connected the ICBT1 collector electrode with PTC element 11 and is easy to detect its temperature.
In apparatus of the present invention of Fig. 4, PTC element 11 is connected between the end (collector electrode) and diode 14 of power semiconductor 1 (GTR), the other end of diode 14 connects the input of comparator 2, thermistor 10 is connected between the emitter of another input of comparator 2 and GTR1, the output of comparator 2 is by the base stage of driver 13 (integrated circuit UAA4002) connection GTR1, and comparator 2 is produced among the UAA4002.Its principle is identical with effect and Fig. 3.
In apparatus of the present invention of Fig. 5, device 3 (resistance 8) connects transducer 4 (thermistor 10) by electronic component (resistance 7), resistance 7 is connected the input M of comparator 2 with the tie point of thermistor 10, another input N connecting moves setting voltage of comparator 2, the output of comparator 2 are connected the control utmost point of power semiconductor 1 (MOSFET) by controller 5 (driver 13:IR2110 and resistance 12).The signal of reflection MOSFET1 overcurrent is by the signal effect of reflection MOSFET1 temperature on resistance 7 and the thermistor 10 on the resistance 8; the operating value that makes comparator 2 protection MOSFET1 overcurrent rises with the temperature of MOSFET1 and descends; the temperature of MOSFET1 or overcurrent surpass its tolerance value, and comparator 2 is all by IR2110 and resistance 12 protection MOSFET1.But MOSFET1 applied current and availability at normal temperatures is greatly improved.
In apparatus of the present invention of Fig. 6, except that power semiconductor 1 is that VMOS and device 3 are the hall device 9, all the other are partly all identical with Fig. 5, and effect is also identical with Fig. 5.
Claims (5)
1, the device of protection power semiconductor 1; include the device 3 of comparator 2, detection power semiconductor device 1 overcurrent, the transducer 4 of detection power semiconductor device 1 temperature; the output of comparator 2 is by the control utmost point of controller 5 connection power semiconductors 1, and it is characterized in that: device 3 is connected with the input of transducer 4 with comparator 2.
2, device as claimed in claim 1 is characterized in that: the output of comparator 2 directly connects the control utmost point of power semiconductor 1.
3, device as claimed in claim 1 is characterized in that: device 3 is connected with transducer 4.
4, device as claimed in claim 1 is characterized in that: transducer 4 is connected between the end and device 3 of power semiconductor 1, and the other end of device 3 directly or connect the input of comparator 2 by electronic component.
5, device as claimed in claim 4 is characterized in that: transducer 4 is connected another input of comparator 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN94222512U CN2221267Y (en) | 1994-09-24 | 1994-09-24 | Device for protecting power semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN94222512U CN2221267Y (en) | 1994-09-24 | 1994-09-24 | Device for protecting power semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2221267Y true CN2221267Y (en) | 1996-02-28 |
Family
ID=33836517
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN94222512U Expired - Fee Related CN2221267Y (en) | 1994-09-24 | 1994-09-24 | Device for protecting power semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2221267Y (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100581011C (en) * | 2004-08-09 | 2010-01-13 | 迪亚光公司 | Intelligent drive circuit for light emitting diode (LED) light engine |
| CN102447459A (en) * | 2010-10-06 | 2012-05-09 | 陈江群 | Intelligent inductive switch of wash room |
| CN102447464A (en) * | 2010-10-11 | 2012-05-09 | 重庆工商大学 | Serial port TXD (transmit data) line management check indicator type 24N/2 group household electronic wire holder |
| CN101371621B (en) * | 2006-01-24 | 2012-07-18 | 欧司朗股份有限公司 | A protection device for electronic converters, related converter and method |
| CN102723935A (en) * | 2012-05-22 | 2012-10-10 | 柏德胜 | Self-turnoff component driving protection circuit |
| CN101686043B (en) * | 2008-09-28 | 2012-12-05 | 四川虹欧显示器件有限公司 | Circuit structure for protecting driving tube |
| CN103029650A (en) * | 2011-08-30 | 2013-04-10 | 通用汽车环球科技运作有限责任公司 | Prediction of transistor temperature in inverter power module of vehicle, and related operating method |
| CN102104372B (en) * | 2009-12-21 | 2013-06-12 | 台达电子工业股份有限公司 | Cycling switch control circuit and control method thereof |
| CN103715874A (en) * | 2012-10-09 | 2014-04-09 | 富士电机株式会社 | Gate driving circuit having a fault detecting circuit for a semiconductor switching device |
-
1994
- 1994-09-24 CN CN94222512U patent/CN2221267Y/en not_active Expired - Fee Related
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100581011C (en) * | 2004-08-09 | 2010-01-13 | 迪亚光公司 | Intelligent drive circuit for light emitting diode (LED) light engine |
| CN101371621B (en) * | 2006-01-24 | 2012-07-18 | 欧司朗股份有限公司 | A protection device for electronic converters, related converter and method |
| CN101686043B (en) * | 2008-09-28 | 2012-12-05 | 四川虹欧显示器件有限公司 | Circuit structure for protecting driving tube |
| CN102104372B (en) * | 2009-12-21 | 2013-06-12 | 台达电子工业股份有限公司 | Cycling switch control circuit and control method thereof |
| CN102447459B (en) * | 2010-10-06 | 2013-09-25 | 陈江群 | Intelligent inductive switch of wash room |
| CN102447459A (en) * | 2010-10-06 | 2012-05-09 | 陈江群 | Intelligent inductive switch of wash room |
| CN102447464A (en) * | 2010-10-11 | 2012-05-09 | 重庆工商大学 | Serial port TXD (transmit data) line management check indicator type 24N/2 group household electronic wire holder |
| CN102447464B (en) * | 2010-10-11 | 2013-07-10 | 重庆工商大学 | Serial port TXD (transmit data) line management check indicator type 24N/2 group household electronic wire holder |
| CN103029650A (en) * | 2011-08-30 | 2013-04-10 | 通用汽车环球科技运作有限责任公司 | Prediction of transistor temperature in inverter power module of vehicle, and related operating method |
| US8847427B2 (en) | 2011-08-30 | 2014-09-30 | GM Global Technology Operations LLC | Prediction of transistor temperature in an inverter power module of a vehicle, and related operating methods |
| CN103029650B (en) * | 2011-08-30 | 2015-05-20 | 通用汽车环球科技运作有限责任公司 | Prediction of transistor temperature in inverter power module of vehicle, and related operating method |
| CN102723935A (en) * | 2012-05-22 | 2012-10-10 | 柏德胜 | Self-turnoff component driving protection circuit |
| CN103715874A (en) * | 2012-10-09 | 2014-04-09 | 富士电机株式会社 | Gate driving circuit having a fault detecting circuit for a semiconductor switching device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |