CN101764595B - A kind of IGBT drive and protection circuit - Google Patents
A kind of IGBT drive and protection circuit Download PDFInfo
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- CN101764595B CN101764595B CN200910225997.XA CN200910225997A CN101764595B CN 101764595 B CN101764595 B CN 101764595B CN 200910225997 A CN200910225997 A CN 200910225997A CN 101764595 B CN101764595 B CN 101764595B
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Abstract
The invention belongs to electric and electronic technical field, provide one effectively to realize power down protection, can not logical IGBT drive and protection circuit be opened by mistake; Comprise total radio amplifier, push-pull driver circuit and IGBT, the former is provided with pwm signal input, for being amplified by described pwm signal; The latter is provided with VDD power input, for accepting VDD Power supply; Between total radio amplifier and pwm signal input, be connected with a NPN triode, pwm signal input is drawn from its emitter, and its base stage, after resistance, is provided with VCC power input, for accepting VCC Power supply; Its collector electrode, after resistance, is connected to VDD power input; Having power down protection, gate protection, collector overvoltage defencive function, is a kind of reliable and stable IGBT drive circuit.
Description
Technical field
The invention belongs to electric and electronic technical field, relate to the drive and protection circuit of insulated gate bipolar transistor IGBT.
Background technology
Insulated gate bipolar transistor IGBT integrates the advantage of power transistor and power field effect pipe MOSFET; have and be easy to driving, large, shutoff, switching frequency high (10-50kHz) certainly the feature of peak current capacity; be widely used in the middle of small size, high efficiency variable frequency power supply, electric machine speed regulation, UPS and inverter type welder, the driving of IGBT and protection are the key technologies in its application.
The general IGBT drive circuit of prior art is as Fig. 1, perfect not in power down protection; When the situation of power down appears in pwm signal end, IGBT can be opened by mistake logical; And lack gate protection, collector overvoltage protection.
Summary of the invention
The technical problem to be solved in the present invention provides one effectively to realize power down protection for above-mentioned prior art present situation, and IGBT can not be opened by mistake the technical scheme of logical IGBT drive and protection circuit.
The present invention solves the problems of the technologies described above by the following technical solutions:
A kind of IGBT drive and protection circuit, comprise total radio amplifier, push-pull driver circuit and IGBT, described total radio amplifier is provided with pwm signal input, for being amplified by described pwm signal, described push-pull driver circuit is provided with VDD power input, for accepting VDD Power supply, it is characterized in that: between described total radio amplifier and pwm signal input, be connected with a NPN triode Q1, described pwm signal input is drawn from the emitter of NPN triode Q1, its base stage, after resistance R1, is provided with VCC power input, for accepting VCC Power supply, its collector electrode is after resistance R2, be connected to described VDD power input, and total radio amplifier is connected to form by a NPN triode Q2 and resistance R3, and the base stage of NPN triode Q2 is connected to the described collector electrode of NPN triode Q1 and the tie point of resistance R2, the emitter of NPN triode Q2 is connected to described VDD power supply through resistance R3, above-mentioned push-pull driver circuit comprises NPN triode Q3, PNP triode Q4, wherein the base stage of NPN triode Q3 connects one end of the 4th resistance R4, one end of the emitter contact resistance R6 of NPN triode Q3, one end of the base stage contact resistance R5 of PNP triode Q4, the tie point of the other end of resistance R4 and the equal contact resistance R3 of the other end of resistance R5 and NPN triode Q2 collector electrode, one end of the emitter contact resistance R7 of PNP triode Q4, between the grid that resistance R8 is connected in parallel on described IGBT and emitter.
As priority scheme, between the grid and emitter of described IGBT, be connected with resistance R8 and voltage-stabiliser tube D1 with parallel way.
As further priority scheme, between the emitter and collector of described IGBT, be connected with electric capacity C1 with parallel way.
A kind of chip, for IGBT drive and protection, its inside comprises above-mentioned IGBT drive and protection circuit.
IGBT has that input impedance is high, operating rate is fast, Heat stability is good drive circuit is simple, on state voltage is low, withstand voltage height and bear the advantages such as electric current is large; But, prior art exist IGBT gate driver circuit design on unreasonable, affect the performance of IGBT superperformance, govern popularization and the application of IGBT.Compared with prior art, because the present invention is connected with a NPN triode Q1 between described total radio amplifier and pwm signal input, described pwm signal input is drawn from its emitter, and its base stage is after resistance R1, be provided with VCC power input, for receiving VCC Power supply; Its collector electrode, after resistance R2, is connected to described VDD power input; There is power down protection, gate protection, collector overvoltage defencive function.A kind of reliable, stable IGBT drive circuit.
Fig. 2 gives one of the present invention preferred IGBT drive circuit, this circuit solves the problem that general discrete component drive circuit causes IGBT to mislead after pwm signal makes a clean sweep of electricity, realized the conversion of level by NPN triode Ql, frequency response is high, can meet the requirement of the speed-sensitive switch of IGBT; There is power-down protection; Increase voltage-stabiliser tube D1, electric capacity C1 on this basis, form the drive circuit with gate protection and over-voltage protection function of Fig. 3; More comprehensively, make drive circuit more stable, IGBT in use failure rate reduces greatly in protection.
Accompanying drawing explanation
Fig. 1 is prior art IGBT drive circuit.
Fig. 2 is the embodiment of the present invention one IGBT drive circuit.
Fig. 3 is the embodiment of the present invention two IGBT drive circuit.
Fig. 4 is IGBT drive signal waveform figure of the present invention.
Fig. 5 is IGBT turn off process VCE oscillogram of the present invention.
Embodiment
Describe performance of the present invention in detail below in conjunction with accompanying drawing, but they do not form limitation of the invention, only for example.Simultaneously by illustrating that advantage of the present invention will become clearly and easy understand.
Embodiment one: as shown in Figure 2, IGBT drive circuit comprises the amplification of drive singal, push-pull drive and protection three parts.In figure, Q0 is IGBT, is the target needing to drive.Q1, Q2, Q3 is NPN triode, and Q4 is PNP triode.The emitter of pwm signal access triode Q1, the base stage of triode Q1 is pulled upward to power supply VCC by resistance R1; The collector electrode of triode Q1 is pulled upward to power vd D by resistance R2, and is connected with the base stage of triode Q2; Triode Q2 and resistance R3 forms typical common emitter amplifying circuit, is the preamplifying circuit of pwm signal, and has the function of level conversion; Triode Q3, triode Q4 are push-pull drive, are powered by VDD, resistance R4, and resistance R5 is connected on triode Q3 respectively, the base stage of triode Q4, the electric current of restriction base stage; Resistance R6, resistance R7 is connected on triode Q3 respectively, the emitter of triode Q4, and effect is adjustment the opening of IGBT, turn-off time.Between the grid that resistance R8, voltage-stabiliser tube Dl are connected in parallel on IGBT Q0 and emitter, the grid of protection IGBT does not damage by overvoltage; Electric capacity C1 is connected in parallel between the emitter and collector of Q0, suppresses the peak voltage of collector electrode during the opening of IGBT.
Pwm signal is generally single-chip microcomputer or DSP sends, for the break-make of control IGBT; Because the power supply (VCC in figure) of single-chip microcomputer is generally 5V, 3.3V or lower, the high level of pwm signal cannot Direct driver IGBT, so need to carry out level conversion, by the circuit of triode Q1, the high level of pwm signal can be transformed into VDD, the size of VDD is chosen according to the gate drive level of IGBT, is generally 15V.Concrete oscillogram is shown in Fig. 4.Pwm signal, after the reverse amplification of Ql, Q2, becomes signal V2 high level and becomes VDD.Signal V2 is through recommending Q3, and the push-pull circuit of Q4 composition, electric current amplifies further, and voltage waveform is as shown in VG.
Triode Q2 forms common emitter amplifying circuit, and can amplify the electric current of pwm signal, multiplication factor is A=R2/R3.Q3, Q4 are push-pull drive, the Q3 conducting when Q2 turns off, Q4 turn off, electric current flows to E level from the C level of Q3, through resistance R6 to the gate capacitance charges of IGBT, when VG reach IGBT open threshold values Vth time, IGBT starts conducting, VG continues charge, until VDD-V
cEsatenvelope.Due to the saturation voltage drop V of triode
cEsatlevel off to zero, can think VG=VDD.When Q2 opens, Q4 conducting, Q3 turn off, and electric current flows to C level through resistance R7 from the E level of Q4, and the grid capacitance electric discharge of IGBT, VG is decreased to V gradually
cEsat, can think now VG=0.
Generally, the guarantee value of the gate-emitter driving voltage VG of IGBT is scholar 20V, if overtension between IGBT gate-emitter, exceedes the withstand voltage then IGBT possibility permanent damage between gate-emitter; Equally, if be added in voltage that IGBT collector electrode and emitter allow to exceed withstand voltage between collector electrode-emitter, also can permanent destruction IGBT.Because the existence of distributed inductance in circuit, the switching speed of IGBT is higher in addition, when IGBT turns off and with it and the reverse recovery diodes backward recovery connect time, very large surge voltage Ldi/dt will be produced, threaten the safety of IGBT.The above is the weak point of embodiment one; Certainly, if reach instructions for use, its cost is lower.
Embodiment two: for the above-mentioned weak point of embodiment one, the basis of embodiment one is improved to embodiment two.As Fig. 3: on the basis of the embodiment one shown in Fig. 2.Increasing voltage-stabiliser tube D1 is connected in parallel between gate-emitter, increases electric capacity C1 and is connected in parallel between the collector and emitter of IGBT.Also diode D1 can be adopted to be connected in parallel on separately scheme between the collector and emitter of IGBT, or to adopt electric capacity C1 to be connected in parallel on separately scheme between the collector and emitter of IGBT; Just corresponding function is short of to some extent.
As Fig. 3: diode Dl is a voltage-stabiliser tube, and value H is higher than VDD in its voltage stabilizing, lower than the maximum of the permission of VG.If the spike exceeding gate withstand voltage appears in VG, VG clamper protects grid not damaged at voltage stabilizing value VZ by diode D1.
Fig. 5 is IGBT turn off process VCE oscillogram of the present invention.When IGBT turns off, the voltage VCE of the collector electrode of IGBT has obvious peak voltage to occur at shutdown moment, uses electric capacity C1 Absorbable rod peak voltage, carries out overvoltage protection to IGBT.As shown in Figure 5, before end uses electric capacity C1, VCE peak voltage higher (thick line waveform), may destroy IGBT, and after using electric capacity C1, the peak voltage of VCE obviously reduces (fine rule waveform).After peak voltage is absorbed, not only can ensureing that IGBT is not by excessive pressure damages, also can reducing the EMI radiation of IGBT when turning off.Electric capacity C1 should use the thin-film capacitor that withstand voltage height, dielectric loss are little.
Certainly, when instructions for use can be reached, diode D1 also can be adopted to be connected in parallel on separately scheme between the collector and emitter of IGBT, or adopt electric capacity C1 to be connected in parallel on separately scheme between the collector and emitter of IGBT, to save cost.
Above two embodiments all have power-down protection, and when after power supply VCC power down, the circuit that triode Q2, triode Q3, triode Q4 are formed can ensure that IGBT can not mislead.When after power vd D power down, the grid of IGBT is shorted to emitter by resistance R8, and IGBT can not conducting.
In sum, the present invention has following functions:
1, realized the conversion of level by NPN triode Q1, frequency response is high, can meet the requirement of the speed-sensitive switch of IGBT.
2, the grid that push-pull drive can meet IGBT needs the requirement of large driven current density.
3, by configuring resistance R6, the resistance R7 of different numerical value, adjustment the opening of IGBT, turn-off time.
4, gate protection is carried out by voltage-stabiliser tube Dl.
5, carried out the peak absorbing of collector electrode by electric capacity C1, carry out overvoltage protection.
6, circuit has power-down protection.
The present invention, by simple discrete component, can carry out reliable and stable driving to IGBT, realizes power down simultaneously and protects protection, collector overvoltage defencive function; Circuit is simple, and cost is low, can replace the driving chip that cost is higher.
Certainly, also according to technology ten thousand case of the present invention, internal circuit can be made simple, the chip of advantage of lower cost.
Claims (6)
1. an IGBT drive and protection circuit, comprises total radio amplifier, push-pull driver circuit and IGBT, and described total radio amplifier is provided with pwm signal input, for being amplified by described pwm signal, described push-pull driver circuit is provided with VDD power input, for accepting VDD Power supply, it is characterized in that: between described total radio amplifier and pwm signal input, be connected with a NPN triode Q1, described pwm signal input is drawn from the emitter of NPN triode Q1, its base stage, after resistance R1, is provided with VCC power input, for accepting VCC Power supply, its collector electrode is after resistance R2, be connected to described VDD power input, and total radio amplifier is connected to form by a NPN triode Q2 and resistance R3, and the base stage of NPN triode Q2 is connected to the described collector electrode of NPN triode Q1 and the tie point of resistance R2, the emitter of NPN triode Q2 is connected to VDD power supply through resistance R3, above-mentioned push-pull driver circuit comprises NPN triode Q3, PNP triode Q4, wherein the base stage of NPN triode Q3 connects one end of the 4th resistance R4, one end of the emitter contact resistance R6 of NPN triode Q3, one end of the base stage contact resistance R5 of PNP triode Q4, the tie point of the other end of resistance R4 and the equal contact resistance R3 of the other end of resistance R5 and NPN triode Q2 collector electrode, one end of the emitter contact resistance R7 of PNP triode Q4, between the grid that resistance R8 is connected in parallel on described IGBT and emitter.
2. IGBT drive and protection circuit as claimed in claim 1, is characterized in that: between the grid and emitter of described IGBT, be connected with resistance R8 and voltage-stabiliser tube D1 with parallel way.
3. IGBT drive and protection circuit as claimed in claim 2, is characterized in that: between the emitter and collector of described IGBT, be connected with electric capacity C1 with parallel way.
4. a chip, for IGBT drive and protection, is characterized in that: its inside comprises IGBT drive and protection circuit as claimed in claim 1.
5. chip as claimed in claim 4, is characterized in that: between the grid and emitter of described IGBT, be connected with resistance R8 and voltage-stabiliser tube D1 with parallel way.
6. chip as claimed in claim 5, is characterized in that: between the emitter and collector of described IGBT, be connected with electric capacity C1 with parallel way.
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| Application Number | Priority Date | Filing Date | Title |
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| CN200910225997.XA CN101764595B (en) | 2009-11-23 | 2009-11-23 | A kind of IGBT drive and protection circuit |
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| CN200910225997.XA CN101764595B (en) | 2009-11-23 | 2009-11-23 | A kind of IGBT drive and protection circuit |
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| CN101764595A CN101764595A (en) | 2010-06-30 |
| CN101764595B true CN101764595B (en) | 2015-09-02 |
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| CN102082429A (en) * | 2010-12-24 | 2011-06-01 | 奇瑞汽车股份有限公司 | IGBT (Insulated Gate Bipolar Translator) shut-off surge voltage clamp and suppression circuit |
| CN102801287B (en) * | 2011-05-25 | 2016-01-20 | 深圳市科陆驱动技术有限公司 | A kind of power device drives pressure limiting circuit |
| CN102843049B (en) * | 2011-06-20 | 2015-07-22 | 上海渝癸德信息技术服务中心 | Rectifier voltage regulator for motorcycles |
| CN102739211A (en) * | 2012-06-26 | 2012-10-17 | 中国科学院电工研究所 | Insulated gate bipolar transistor (IGBT) driving push-pull circuit |
| CN102868284B (en) * | 2012-09-13 | 2014-09-03 | 中国科学院电工研究所 | IGBT (Insulated Gate Bipolar Transistor) drive circuit |
| CN103701456A (en) * | 2013-12-30 | 2014-04-02 | 京信通信系统（中国）有限公司 | Power amplifier external interface circuit |
| CN105024581B (en) * | 2015-08-07 | 2018-03-09 | 上海沪工焊接集团股份有限公司 | IGBT full bridge inverters |
| CN106130520A (en) * | 2016-06-17 | 2016-11-16 | 珠海格力电器股份有限公司 | IGBT short-circuit protection circuit and method, IGBT driver and IGBT circuit |
| CN106685196B (en) * | 2016-12-29 | 2019-08-13 | 大禹电气科技股份有限公司 | IGBT parallel drive and Drive Protecting Circuit in a kind of high-power high voltage frequency converter |
| CN106856371B (en) * | 2017-02-28 | 2023-06-20 | 重庆西山科技股份有限公司 | Push-pull driving device and method with protection |
| CN107395178B (en) * | 2017-07-04 | 2020-07-07 | 苏州捷芯威半导体有限公司 | Semiconductor power switching device and electronic apparatus |
| CN107493095B (en) * | 2017-08-09 | 2020-06-16 | 东南大学 | Silicon-based IGBT (insulated Gate Bipolar transistor) and silicon carbide Schottky diode mixed gate driving system |
| CN107395175B (en) * | 2017-09-04 | 2023-09-22 | 云南电网有限责任公司电力科学研究院 | MOS tube overcurrent protection circuit |
| CN109495092B (en) * | 2018-11-19 | 2024-06-04 | 深圳市格瑞普智能电子有限公司 | Power switch tube driving circuit and driving method |
| CN110597095A (en) * | 2019-09-24 | 2019-12-20 | 广州华工科技开发有限公司 | Controller based on IGBT |
| CN111130532A (en) * | 2019-12-31 | 2020-05-08 | 苏州伟创电气科技股份有限公司 | IGBT gate push-pull driving circuit and method and IGBT driving circuit |
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Address after: 315806 Zhejiang city of Ningbo province Beilun Daqi Yongjiang Road No. 26 (Ningbo Deye Inverter Technology Co. Ltd.) Patentee after: Ningbo Deye Inverter Technology Co., Ltd. Address before: 315806 Zhejiang Province, Ningbo city Beilun District Yongjiang Road No. 26 (Ningbo Deye frequency technology Limited by Share Ltd) Patentee before: Ningbo De Ye converter technique incorporated company |