CN110597095A - Controller based on IGBT - Google Patents
Controller based on IGBT Download PDFInfo
- Publication number
- CN110597095A CN110597095A CN201910908262.0A CN201910908262A CN110597095A CN 110597095 A CN110597095 A CN 110597095A CN 201910908262 A CN201910908262 A CN 201910908262A CN 110597095 A CN110597095 A CN 110597095A
- Authority
- CN
- China
- Prior art keywords
- igbt
- alarm
- signal
- module
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B19/00—Programme-control systems
- G05B19/02—Programme-control systems electric
- G05B19/04—Programme control other than numerical control, i.e. in sequence controllers or logic controllers
-
- G—PHYSICS
- G08—SIGNALLING
- G08B—SIGNALLING OR CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
- G08B21/00—Alarms responsive to a single specified undesired or abnormal condition and not otherwise provided for
- G08B21/18—Status alarms
- G08B21/185—Electrical failure alarms
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Automation & Control Theory (AREA)
- Business, Economics & Management (AREA)
- Emergency Management (AREA)
- Power Conversion In General (AREA)
Abstract
The invention provides an IGBT-based controller, which comprises an IGBT detection element, a control module, an alarm execution module and an alarm module; the IGBT detection element is used for detecting whether a channel is formed by adding forward grid voltage to the switch of the IGBT and providing base current for the PNP transistor; simultaneously, whether a reverse gate voltage is added to eliminate a channel is detected, and a reverse base current flows through the reverse gate voltage to turn off the IGBT; the control module is coupled on the IGBT detection element and used for receiving the detection signal of the IGBT detection element and controlling the signal; the alarm execution module is coupled to the control module and used for receiving the signal sent by the alarm control module and then sending an alarm signal; the alarm module sends a signal to the control module; the control module sends a signal to the alarm execution module after receiving the signal, and the alarm execution module sends an indication signal after receiving the alarm signal. The damage of the internal elements of the IGBT module and the fire hazard caused between the internal power supplies are avoided.
Description
Technical Field
The invention relates to the technical field of electronic circuits, in particular to a controller based on an IGBT.
Background
The IGBT module is a modularized semiconductor product formed by bridge packaging of an IGBT (insulated gate bipolar transistor chip) and an FWD (freewheeling diode chip) through a specific circuit; the packaged IGBT module is directly applied to equipment such as a frequency converter, a UPS (uninterrupted power supply) and the like;
the IGBT module has the characteristics of energy conservation, convenience in installation and maintenance, stable heat dissipation and the like; most of the current market products are such modular products, generally, the IGBT is also referred to as IGBT module; with the promotion of concepts of energy conservation, environmental protection and the like, the products are more and more seen in the market.
The IGBT module forms a channel by adding forward grid voltage, provides base electrode electricity for the PNP transistor, adds reverse gate voltage to eliminate the channel, and flows through reverse base current to turn off the IGBT, but the existing IGBT controller can not detect whether an internal switch forms the channel by adding the forward grid voltage or whether the reverse gate voltage is added to eliminate the channel in advance, so that the internal element is damaged and cannot be maintained and replaced in time, the internal element and a circuit are ignited, and a fire disaster is caused.
Disclosure of Invention
The invention provides an IGBT-based controller, and the existing IGBT controller can not detect whether an internal switch forms a channel by applying forward gate voltage or not or whether reverse gate voltage is applied to eliminate the channel in advance, so that internal elements are damaged and cannot be maintained and replaced in time, and the internal elements and a circuit are ignited to cause a fire disaster.
The technical purpose is realized by the following technical scheme that the controller based on the IGBT comprises an IGBT detection element, a control module, an alarm execution module and an alarm module;
the IGBT detection element is used for detecting whether a switch of the IGBT forms a channel by adding forward grid voltage or not and providing base current for the PNP transistor; simultaneously, whether a reverse gate voltage is added to eliminate a channel is detected, and a reverse base current flows through the reverse gate voltage to turn off the IGBT;
the control module is coupled to the IGBT detection element and used for receiving the detection signal of the IGBT detection element and controlling the signal;
the alarm execution module is coupled to the control module and used for receiving the signal sent by the alarm control module and then sending an alarm signal;
the alarm module is coupled with the control module and sends a signal to the control module;
the control module sends a signal to the alarm execution module after receiving the signal, and the alarm execution module sends an indication signal after receiving the alarm signal.
Through the technical scheme: receiving and controlling IGBT detection element detection signals through setting up a control module, namely whether the switch of the IGBT forms a channel through adding forward grid voltage, provide base current for a PNP transistor, whether add reverse gate voltage and eliminate the channel, flow through reverse base current, make the IGBT turn-off, feed back to an alarm execution module, an alarm execution module sends an alarm module, give an alarm, and then play the role of timely learning whether the switch of the IGBT forms a channel through adding forward grid voltage and whether add reverse gate voltage and eliminate the channel, flow through reverse base current, make the IGBT turn-off, avoid causing the inside of the component to be damaged.
Further, in the above-mentioned case,
the IGBT detection element is also used for detecting whether the voltage between the grid electrode and the emitter electrode of the IGBT is too low or too high to exceed the withstand voltage between the grid electrode and the emitter electrode;
detecting the voltage between the IGBT grid and the emitter when the voltage between the IGBT grid and the emitter is too low;
the voltage between the grid electrode and the emitting electrode of the detection IGBT is higher than the withstand voltage between the grid electrode and the emitting electrode, and then the IGBT side is permanently damaged.
Through the technical scheme: whether the voltage between the grid electrode and the emitter electrode of the IGBT is too low or too high to exceed the withstand voltage between the grid electrode and the emitter electrode is detected through the IGBT detection element, and the damage to the interior of the IGBT module is avoided.
Further, in the above-mentioned case,
the control module comprises a power circuit, and the alarm module is electrically connected with the power circuit and sends an alarm signal to the alarm module.
Through the technical scheme: the information is electrically transmitted through the power circuit, so that the circuit information is smooth.
Further, in the above-mentioned case,
a conveying module is coupled in the IGBT detection element;
the detection module is used for receiving and detecting whether a signal for forming a channel by adding forward gate voltage or whether reverse gate voltage is added to eliminate the channel or not and sending a detection signal to the control module.
Through the technical scheme: and the information detected by the IGBT detection element is received by the conveying module and fed back to the control module, and the information is sent out of the control module.
Further, in the above-mentioned case,
the power circuit is coupled with the delivery module and used for providing power for the delivery module.
Through the technical scheme: the power supply circuit is coupled with the conveying module, so that the smoothness of the power supply of the conveying module is ensured.
Further, in the above-mentioned case,
the alarm module comprises a singlechip;
the input ends of the two ends of the single chip microcomputer are respectively coupled with the conveying module and the alarm module, and the input ends of the two ends of the single chip microcomputer are connected in parallel and then connected in series with a first alarm indicator lamp and a second alarm indicator lamp.
Further, in the above-mentioned case,
the first alarm indicator lamp is connected with the second alarm indicator lamp in parallel.
Through the technical scheme: the first alarm indicator lamp and the second alarm indicator lamp send out indication information, and the problem of faults in the IGBT module can be prompted.
Further, in the above-mentioned case,
the first alarm indicator lamp is used for receiving the alarm signal sent by the alarm execution module and then sending an indication signal and then sending an alarm indication.
Through the technical scheme: whether a switch of an IGBT in the IGBT module forms a channel by adding forward grid voltage is known through an indicating signal of the first alarm indicating lamp, and base current is provided for the PNP transistor; whether a reverse gate voltage is applied eliminates the channel.
Further, in the above-mentioned case,
and the second alarm indicator lamp is used for receiving a signal which is sent by the alarm execution module and used for detecting whether the voltage between the grid electrode and the emitter electrode of the IGBT is too low or too high to exceed the withstand voltage between the grid electrode and the emitter electrode and then sending an alarm indication.
Through the technical scheme: the second alarm indication can indicate that the IGBT detection element inside the IGBT module is also used for detecting whether the voltage between the grid electrode and the emitter electrode of the IGBT is too low or too high to exceed the withstand voltage between the grid electrode and the emitter electrode.
The invention has the beneficial effects that: by arranging the alarm execution module and the alarm module, whether the switch of the IGBT in the IGBT module forms a channel by adding forward grid voltage or not can be judged, base current is provided for the PNP transistor or whether reverse gate voltage is added to eliminate the channel or not, and the reverse base current flows through the PNP transistor to turn off the IGBT; and whether the voltage between the IGBT grid and the emitter is too low or too high to exceed the withstand voltage between the grid and the emitter is detected, and an alarm module can be used for alarming, so that damage to internal elements of the IGBT module and fire caused by fire among internal power supplies are avoided.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an IGBT-based controller according to this embodiment.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the case of the example 1, the following examples are given,
as shown in fig. 1: a controller based on IGBT comprises an IGBT detection element, a control module, an alarm execution module and an alarm module;
the IGBT detection element is used for detecting whether a channel is formed by adding forward grid voltage to the switch of the IGBT and providing base current for the PNP transistor; simultaneously, whether a reverse gate voltage is added to eliminate a channel is detected, and a reverse base current flows through the reverse gate voltage to turn off the IGBT;
the control module is coupled on the IGBT detection element and used for receiving the detection signal of the IGBT detection element and controlling the signal;
the alarm execution module is coupled to the control module and used for receiving the signal sent by the alarm control module and then sending an alarm signal;
the alarm module is coupled with the control module and sends a signal to the control module;
the control module sends a signal to the alarm execution module after receiving the signal, and the alarm execution module sends an indication signal after receiving the alarm signal.
In this embodiment, the control module receives whether the switch of the IGBT detected by the IGBT detection element forms a channel by applying a forward gate voltage, provides a base current to the PNP transistor, and applies a reverse gate voltage to eliminate the channel, and the reverse base current flows through the PNP transistor, so that the IGBT is turned off and controls a signal thereof, and after sending the signal to the alarm execution module, the alarm execution module sends an alarm signal, and the alarm execution module sends an indication signal after receiving the alarm signal.
In the present embodiment, the relationship between the drain current and the drain-source voltage, when the IGBT is in the on state, since its PNP transistor is a wide base region transistor, its B value is extremely low;
the current flowing through the MOSFET becomes the main part of the total current of the IGBT;
the on-state voltage uds (on) can be represented by the following formula:
Uds(on)＝Uj1+Udr+IdRoh
in the formula, Uj1 is the forward voltage of JI junction, and the value is 0.7-1V; udr-voltage drop across spreading resistor Rdr; roh-channel resistance.
In the case of the example 2, the following examples are given,
as shown in fig. 1: a controller based on IGBT comprises an IGBT detection element, a control module, an alarm execution module and an alarm module;
the IGBT detection element is also used to detect whether the voltage between the gate and emitter of the IGBT (i.e., the drive voltage) is too low or too high to exceed the withstand voltage between the gate and emitter;
detecting that the voltage (namely the driving voltage) between the IGBT grid and the emitter is too low, and detecting the voltage (namely the driving voltage) between the IGBT grid and the emitter;
the IGBT side is permanently damaged by detecting that the voltage between the gate and emitter of the IGBT (i.e., the driving voltage) is higher than the withstand voltage between the gate and emitter.
The control module is coupled on the IGBT detection element and used for receiving the detection signal of the IGBT detection element and controlling the signal;
the alarm execution module is coupled to the control module and used for receiving the signal sent by the alarm control module and then sending an alarm signal;
the alarm module is coupled with the control module and sends a signal to the control module;
the control module sends a signal to the alarm execution module after receiving the signal, and the alarm execution module sends an indication signal after receiving the alarm signal.
In this embodiment, the IGBT detection element generally determines whether the field effect transistor is good or bad by a resistance measurement method.
The resistance measuring method is to use a universal meter to measure whether the resistance values between the source and the drain of the field effect transistor, between the grid and the source, between the grid and the drain, between the grid G1 and the grid G2 are consistent with the resistance value marked by the field effect transistor manual so as to judge whether the transistor is good or bad. The specific method comprises the following steps: firstly, a universal meter is placed in an R multiplied by 10 or R multiplied by 100 gear, the resistance between a source electrode S and a drain electrode D is measured, generally ranging from dozens of ohms to thousands of ohms (the resistance value of tubes of different types is different as can be known in a manual), and if the measured resistance value is larger than a normal value, the internal contact is possibly poor; if the measured resistance is infinite, an internal pole break is possible. Then, placing the multimeter at R multiplied by 10k, and measuring resistance values between the grid electrodes G1 and G2, between the grid electrode and the source electrode, and between the grid electrode and the drain electrode, wherein when the resistance values are all infinite, the tube is normal; if the resistance values are measured to be too small or a path, the tube is bad.
Note that if both gates are disconnected in the tube, the detection can be performed by device replacement.
Meanwhile, a resistance measuring method is used for judging a field effect transistor without a mark, an induction signal input method is used for estimating the amplification capacity of the field effect transistor, a resistance measuring method is used for judging an electrode of a junction type field effect transistor, and the like.
Wherein, the field effect tube without mark is judged by a resistance measuring method;
firstly, finding out two pins with resistance values, namely a source electrode S and a drain electrode D, wherein the rest two pins are a first grid electrode G1 and a second grid electrode G2 by using a resistance measuring method, recording the resistance value between the source electrode S and the drain electrode D measured by using two meter pens, measuring the meter pens again, recording the measured resistance value, measuring the resistance value once with larger resistance value twice, and using an electrode connected with a black meter pen as the drain electrode D; the red pen is connected with the source S. The S, D pole determined by the method can be verified by a method for estimating the amplification capacity of the tube, namely, the black list pen with high amplification capacity is connected with the D pole; the grounding of the red meter pen is 8 poles;
the detection results of the two methods are the same, after the positions of the drain electrode D and the source electrode S are determined, the circuit is installed according to the corresponding position of D, S, generally, G1 and G2 are aligned to the positions in sequence, the positions of two grid electrodes G1 and G2 are determined, and therefore the sequence of pins D, S, G1 and G2 is determined.
Wherein, the amplifying capacity of the field effect tube is estimated by an induction signal input method;
using the R x 100 grade of a universal meter resistor, connecting a red meter pen with a source S, connecting a black meter pen with a drain D, adding 1.5V power supply voltage to a field effect tube, indicating the resistance value between a drain and a source by a meter needle, then pinching a grid G of the junction field effect tube by hand, and adding an induced voltage signal of a human body to the grid, wherein the drain-source voltage VDS and the drain current Ib are changed due to the amplification effect of the tube, namely the resistance between the drain and the source is changed, so that the meter needle can be observed to swing to a larger extent, and if the grid meter needle swings to a smaller extent by hand, the amplification capability of the tube is relatively poor; the pointer swings greatly, and the amplification capacity of the indicator tube is high; if the needle is not moving, the tube is bad.
Wherein, the electrode of the junction field effect transistor is judged by a resistance measuring method;
according to the phenomenon that the PN junction positive resistance value and the PN junction negative resistance value of the field effect transistor are different, three electrodes of the junction type field effect transistor can be distinguished. The specific method comprises the following steps: dialing a multimeter on an R multiplied by 1k gear, selecting two electrodes optionally, and measuring the positive resistance value and the reverse resistance value of the electrodes respectively, wherein when the positive resistance value and the reverse resistance value of a certain two electrodes are equal and are thousands of ohms, the two electrodes are respectively a drain electrode D and a source electrode S. Because the drain electrode and the source electrode can be interchanged for the JFET, the rest electrode is the grid electrode G, a black pen (a red pen is also used for the purpose) of the multimeter can be contacted with one electrode randomly, the other pen is contacted with the rest two electrodes in sequence to measure the resistance value of the electrode, when the two measured resistance values are approximately equal, the electrode contacted by the black pen is the grid electrode, and the rest two electrodes are the drain electrode and the source electrode respectively. If the resistance values measured twice are large, the resistance values are reverse of PN junctions, namely reverse resistance, the N-channel field effect transistor can be judged, and the black pen is connected with the grid; if the resistance values measured twice are small, the resistance values are forward PN junctions, namely forward resistors, and are judged to be P-channel field effect transistors, and black list pens are connected with the grid electrodes. If the above situation does not occur, the black and red pens can be exchanged to perform the test according to the above method until the grid is determined.
In this embodiment, the control module receives whether the voltage (i.e., the driving voltage) between the gate and the emitter of the IGBT is too low or too high to exceed the withstand voltage between the gate and the emitter, and sends a signal to the alarm execution module, and then the alarm execution module sends an alarm signal, and then the alarm execution module sends an indication signal after receiving the alarm signal.
In the present embodiment, the relationship between the drain current and the drain-source voltage, when the IGBT is in the on state, since its PNP transistor is a wide base region transistor, its B value is extremely low;
the current flowing through the MOSFET becomes the main part of the total current of the IGBT;
the on-state voltage uds (on) can be represented by the following formula:
Uds(on)＝Uj1+Udr+IdRoh
in the formula, Uj1 is the forward voltage of JI junction, and the value is 0.7-1V; udr-voltage drop across spreading resistor Rdr; roh-channel resistance.
In the present embodiment, the on-state current Ids can be represented by the following formula:
Ids＝(1+Bpnp)Imos
imos-current flowing through the MOSFET;
bpnp- -represents the on-state voltage;
because the N + region has a conductance modulation effect, the on-state voltage drop of the IGBT is small, and the on-state voltage drop of the IGBT with the withstand voltage of 1000V is 2-3V;
when the IGBT is in the off state, only a small leakage current exists.
In the case of the example 3, the following examples are given,
as shown in fig. 1: a controller based on IGBT comprises an IGBT detection element, a control module, an alarm execution module and an alarm module;
the IGBT detection element is used for detecting whether a channel is formed by adding forward grid voltage to the switch of the IGBT and providing base current for the PNP transistor; simultaneously, whether a reverse gate voltage is added to eliminate a channel is detected, and a reverse base current flows through the reverse gate voltage to turn off the IGBT;
the control module is coupled on the IGBT detection element and used for receiving the detection signal of the IGBT detection element and controlling the signal;
the alarm execution module is coupled to the control module and used for receiving the signal sent by the alarm control module and then sending an alarm signal;
the alarm module is coupled with the control module and sends a signal to the control module;
the control module sends a signal to the alarm execution module after receiving the signal, and the alarm execution module sends an indication signal after receiving the alarm signal.
The control module comprises a power circuit, and the alarm module is electrically connected with the power circuit and sends an alarm signal to the alarm module.
A conveying module is coupled in the IGBT detection element;
the detection module is used for receiving and detecting whether a signal for forming a channel by adding forward gate voltage or whether reverse gate voltage is added to eliminate the channel or not and sending a detection signal to the control module.
The power circuit is coupled with the delivery module and used for providing power for the delivery module.
The alarm module comprises a singlechip;
the input ends at two ends of the single chip are respectively coupled with the conveying module and the alarm module, and the input ends at two ends of the single chip are connected in parallel and then connected in series with a first alarm indicator lamp and a second alarm indicator lamp.
The first alarm indicator lamp is connected with the second alarm indicator lamp in parallel.
The first alarm indicator lamp is used for receiving the alarm signal sent by the alarm execution module and then sending an indication signal and then sending an alarm indication.
In the case of the example 4, the following examples are given,
as shown in fig. 1: a controller based on IGBT comprises an IGBT detection element, a control module, an alarm execution module and an alarm module;
the IGBT detection element is also used to detect whether the voltage between the gate and emitter of the IGBT (i.e., the drive voltage) is too low or too high to exceed the withstand voltage between the gate and emitter;
detecting that the voltage (namely the driving voltage) between the IGBT grid and the emitter is too low, and detecting the voltage (namely the driving voltage) between the IGBT grid and the emitter;
the IGBT side is permanently damaged by detecting that the voltage between the gate and emitter of the IGBT (i.e., the driving voltage) is higher than the withstand voltage between the gate and emitter.
The relation between the drain current and the drain-source voltage, when the IGBT is in the on state, the B value is extremely low because the PNP transistor is a wide base region transistor;
the current flowing through the MOSFET becomes the main part of the total current of the IGBT;
the on-state voltage uds (on) can be represented by the following formula:
Uds(on)＝Uj1+Udr+IdRoh
in the formula, Uj1 is the forward voltage of JI junction, and the value is 0.7-1V; udr-voltage drop across spreading resistor Rdr; roh-channel resistance.
The control module is coupled on the IGBT detection element and used for receiving the detection signal of the IGBT detection element and controlling the signal;
the alarm execution module is coupled to the control module and used for receiving the signal sent by the alarm control module and then sending an alarm signal;
the alarm module is coupled with the control module and sends a signal to the control module;
the control module sends a signal to the alarm execution module after receiving the signal, and the alarm execution module sends an indication signal after receiving the alarm signal.
A conveying module is coupled in the IGBT detection element;
the detection module is used for receiving and detecting whether a signal for forming a channel by adding forward gate voltage or whether reverse gate voltage is added to eliminate the channel or not and sending a detection signal to the control module.
The power circuit is coupled with the delivery module and used for providing power for the delivery module.
The alarm module comprises a singlechip;
the input ends at two ends of the single chip are respectively coupled with the conveying module and the alarm module, and the input ends at two ends of the single chip are connected in parallel and then connected in series with a first alarm indicator lamp and a second alarm indicator lamp.
The first alarm indicator lamp is connected with the second alarm indicator lamp in parallel.
The second alarm indicator lamp is used for receiving a signal which is sent by the alarm execution module and used for detecting whether the voltage (namely the driving voltage) between the grid electrode and the emitter electrode of the IGBT is too low or too high to exceed the withstand voltage between the grid electrode and the emitter electrode, and then sending an alarm indication.
In the case of the example 5, the following examples were conducted,
as shown in fig. 1: a controller based on IGBT comprises an IGBT detection element, a control module, an alarm execution module and an alarm module;
the IGBT detection element is used for detecting whether a channel is formed by adding forward grid voltage to the switch of the IGBT and providing base current for the PNP transistor; simultaneously, whether a reverse gate voltage is added to eliminate a channel is detected, and a reverse base current flows through the reverse gate voltage to turn off the IGBT;
the control module is coupled on the IGBT detection element and used for receiving the detection signal of the IGBT detection element and controlling the signal;
the alarm execution module is coupled to the control module and used for receiving the signal sent by the alarm control module and then sending an alarm signal;
the alarm module is coupled with the control module and sends a signal to the control module;
the control module sends a signal to the alarm execution module after receiving the signal, and the alarm execution module sends an indication signal after receiving the alarm signal.
As shown in fig. 1: a controller based on IGBT comprises an IGBT detection element, a control module, an alarm execution module and an alarm module;
the IGBT detection element is also used to detect whether the voltage between the gate and emitter of the IGBT (i.e., the drive voltage) is too low or too high to exceed the withstand voltage between the gate and emitter;
detecting that the voltage (namely the driving voltage) between the IGBT grid and the emitter is too low, and detecting the voltage (namely the driving voltage) between the IGBT grid and the emitter;
the IGBT side is permanently damaged by detecting that the voltage between the gate and emitter of the IGBT (i.e., the driving voltage) is higher than the withstand voltage between the gate and emitter.
The control module is coupled on the IGBT detection element and used for receiving the detection signal of the IGBT detection element and controlling the signal;
the alarm execution module is coupled to the control module and used for receiving the signal sent by the alarm control module and then sending an alarm signal;
the alarm module is coupled with the control module and sends a signal to the control module;
the control module sends a signal to the alarm execution module after receiving the signal, and the alarm execution module sends an indication signal after receiving the alarm signal.
The control module is coupled on the IGBT detection element and used for receiving the detection signal of the IGBT detection element and controlling the signal;
the alarm execution module is coupled to the control module and used for receiving the signal sent by the alarm control module and then sending an alarm signal;
the alarm module is coupled with the control module and sends a signal to the control module;
the control module sends a signal to the alarm execution module after receiving the signal, and the alarm execution module sends an indication signal after receiving the alarm signal.
A conveying module is coupled in the IGBT detection element;
the detection module is used for receiving and detecting whether a signal for forming a channel by adding forward gate voltage or whether reverse gate voltage is added to eliminate the channel or not and sending a detection signal to the control module.
The power circuit is coupled with the delivery module and used for providing power for the delivery module.
The alarm module comprises a singlechip;
the input ends at two ends of the single chip are respectively coupled with the conveying module and the alarm module, and the input ends at two ends of the single chip are connected in parallel and then connected in series with a first alarm indicator lamp and a second alarm indicator lamp.
The first alarm indicator lamp is connected with the second alarm indicator lamp in parallel.
The first alarm indicator lamp is used for receiving the alarm signal sent by the alarm execution module and then sending an indication signal and then sending an alarm indication.
The second alarm indicator lamp is used for receiving a signal which is sent by the alarm execution module and used for detecting whether the voltage (namely the driving voltage) between the grid electrode and the emitter electrode of the IGBT is too low or too high to exceed the withstand voltage between the grid electrode and the emitter electrode, and then sending an alarm indication.
In the present embodiment, the relationship between the drain current and the drain-source voltage, when the IGBT is in the on state, since its PNP transistor is a wide base region transistor, its B value is extremely low;
the current flowing through the MOSFET becomes the main part of the total current of the IGBT;
the on-state voltage uds (on) can be represented by the following formula:
Uds(on)＝Uj1+Udr+IdRoh
in the formula, Uj1 is the forward voltage of JI junction, and the value is 0.7-1V; udr-voltage drop across spreading resistor Rdr; roh-channel resistance.
In the present embodiment, the on-state current Ids can be represented by the following formula:
Ids＝(1+Bpnp)Imos
imos-current flowing through the MOSFET;
bpnp- -represents the on-state voltage;
because the N + region has a conductance modulation effect, the on-state voltage drop of the IGBT is small, and the on-state voltage drop of the IGBT with the withstand voltage of 1000V is 2-3V;
when the IGBT is in the off state, only a small leakage current exists.
In summary, by arranging the IGBT detection element, the control module, the alarm execution module, and the alarm module, whether the IGBT switch forms a channel by applying the forward gate voltage is detected by the IGBT detection element, and the base current is supplied to the PNP transistor; if the reverse gate voltage is added to eliminate the channel, the current flows through the reverse base electrode to turn off the IGBT; and whether the voltage (namely the driving voltage) between the IGBT grid and the emitter is too low or too high to exceed the withstand voltage between the grid and the emitter is detected, so that the damage of internal elements of the IGBT module and the fire caused by the fire between internal power supplies are avoided.
In addition, the IGBT-based controller provided by the embodiment of the present invention is described in detail above, and the principle and the embodiment of the present invention are explained in the present document by applying specific examples, and the description of the above embodiments is only used to help understanding the method of the present invention and the core idea thereof; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (9)
1. An IGBT-based controller, characterized in that: the device comprises an IGBT detection element, a control module, an alarm execution module and an alarm module;
the IGBT detection element is used for detecting whether a switch of the IGBT forms a channel by adding forward grid voltage or not and providing base current for the PNP transistor; simultaneously, whether a reverse gate voltage is added to eliminate a channel is detected, and a reverse base current flows through the reverse gate voltage to turn off the IGBT;
the control module is coupled to the IGBT detection element and used for receiving the detection signal of the IGBT detection element and controlling the signal;
the alarm execution module is coupled to the control module and used for receiving the signal sent by the alarm control module and then sending an alarm signal;
the alarm module is coupled with the control module and sends a signal to the control module;
the control module sends a signal to the alarm execution module after receiving the signal, and the alarm execution module sends an indication signal after receiving the alarm signal.
2. The IGBT-based controller of claim 1, wherein:
the IGBT detection element is also used for detecting whether the voltage between the grid electrode and the emitter electrode of the IGBT is too low or too high to exceed the withstand voltage between the grid electrode and the emitter electrode;
detecting the voltage between the IGBT grid and the emitter when the voltage between the IGBT grid and the emitter is too low;
the voltage between the grid electrode and the emitting electrode of the detection IGBT is higher than the withstand voltage between the grid electrode and the emitting electrode, and then the IGBT side is permanently damaged.
3. The IGBT-based controller of claim 1, wherein:
the control module comprises a power circuit, and the alarm module is electrically connected with the power circuit and sends an alarm signal to the alarm module.
4. An IGBT-based controller according to claim 3, wherein:
a conveying module is coupled in the IGBT detection element;
the detection module is used for receiving and detecting whether a signal for forming a channel by adding forward gate voltage or whether reverse gate voltage is added to eliminate the channel or not and sending a detection signal to the control module.
5. The IGBT-based controller of claim 4, wherein:
the power circuit is coupled with the delivery module and used for providing power for the delivery module.
6. The IGBT-based controller of claim 4, wherein:
the alarm module comprises a singlechip;
the input ends of the two ends of the single chip microcomputer are respectively coupled with the conveying module and the alarm module, and the input ends of the two ends of the single chip microcomputer are connected in parallel and then connected in series with a first alarm indicator lamp and a second alarm indicator lamp.
7. The IGBT-based controller of claim 6, wherein:
the first alarm indicator lamp is connected with the second alarm indicator lamp in parallel.
8. The IGBT-based controller of claim 6, wherein:
the first alarm indicator lamp is used for receiving the alarm signal sent by the alarm execution module and then sending an indication signal and then sending an alarm indication.
9. The IGBT-based controller of claim 6, wherein:
and the second alarm indicator lamp is used for receiving a signal which is sent by the alarm execution module and used for detecting whether the voltage between the grid electrode and the emitter electrode of the IGBT is too low or too high to exceed the withstand voltage between the grid electrode and the emitter electrode and then sending an alarm indication.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910908262.0A CN110597095A (en) | 2019-09-24 | 2019-09-24 | Controller based on IGBT |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910908262.0A CN110597095A (en) | 2019-09-24 | 2019-09-24 | Controller based on IGBT |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110597095A true CN110597095A (en) | 2019-12-20 |
Family
ID=68863036
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910908262.0A Pending CN110597095A (en) | 2019-09-24 | 2019-09-24 | Controller based on IGBT |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110597095A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7570101B1 (en) * | 2008-02-27 | 2009-08-04 | The United States Of America As Represented By The United States Department Of Energy | Advanced insulated gate bipolar transistor gate drive |
| CN101764595A (en) * | 2009-11-23 | 2010-06-30 | 宁波德斯科电子科技有限公司 | IGBT drive and protection circuit |
| CN201708690U (en) * | 2010-05-07 | 2011-01-12 | 北京乐普四方方圆科技股份有限公司 | IGBT direct serial protective device |
| CN102136720A (en) * | 2011-04-26 | 2011-07-27 | 广东明阳龙源电力电子有限公司 | Method for detecting short circuit and open circuit faults of IGBT device and controller in online manner |
| CN105790553A (en) * | 2016-03-14 | 2016-07-20 | 上海电机学院 | IGBT intelligent drive unit |
| CN206362839U (en) * | 2017-01-16 | 2017-07-28 | 南京三倍速机电有限公司 | A kind of high speed transducer drive plate detects circuit |
| CN107835002A (en) * | 2017-09-20 | 2018-03-23 | 同方威视技术股份有限公司 | Protection circuit, vibration compensation circuit and power supply circuit in solid state pulse modulator |
| CN108880515A (en) * | 2018-06-06 | 2018-11-23 | 广州汽车集团股份有限公司 | The control method and device of IGBT ON-OFF control circuit |
-
2019
- 2019-09-24 CN CN201910908262.0A patent/CN110597095A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7570101B1 (en) * | 2008-02-27 | 2009-08-04 | The United States Of America As Represented By The United States Department Of Energy | Advanced insulated gate bipolar transistor gate drive |
| CN101764595A (en) * | 2009-11-23 | 2010-06-30 | 宁波德斯科电子科技有限公司 | IGBT drive and protection circuit |
| CN201708690U (en) * | 2010-05-07 | 2011-01-12 | 北京乐普四方方圆科技股份有限公司 | IGBT direct serial protective device |
| CN102136720A (en) * | 2011-04-26 | 2011-07-27 | 广东明阳龙源电力电子有限公司 | Method for detecting short circuit and open circuit faults of IGBT device and controller in online manner |
| CN105790553A (en) * | 2016-03-14 | 2016-07-20 | 上海电机学院 | IGBT intelligent drive unit |
| CN206362839U (en) * | 2017-01-16 | 2017-07-28 | 南京三倍速机电有限公司 | A kind of high speed transducer drive plate detects circuit |
| CN107835002A (en) * | 2017-09-20 | 2018-03-23 | 同方威视技术股份有限公司 | Protection circuit, vibration compensation circuit and power supply circuit in solid state pulse modulator |
| CN108880515A (en) * | 2018-06-06 | 2018-11-23 | 广州汽车集团股份有限公司 | The control method and device of IGBT ON-OFF control circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111337808B (en) | On-line measuring circuit and system for conduction voltage drop of power semiconductor device | |
| US7629775B2 (en) | Battery connection detection circuit | |
| CN106168647A (en) | IGBT ageing state detecting system | |
| CN108318797A (en) | System and method for desaturation detection | |
| US11320481B2 (en) | High voltage interlock circuit and detection method | |
| CN103576043A (en) | Electric leakage detecting appratus | |
| US20110292556A1 (en) | Protection circuit and method for electronic devices | |
| CN103558495A (en) | Multi-channel circuit on-off detection device | |
| CN105445635A (en) | Metal oxide semiconductor field effect transistor on-resistance measuring method | |
| CN110824325A (en) | UIS test circuit and MOSFET avalanche energy compensation method thereof | |
| CN201589815U (en) | Resistance test device | |
| US11489331B2 (en) | Leakage current detection and protection device, and power connector and electrical appliance employing the same | |
| CN110597095A (en) | Controller based on IGBT | |
| CN116609629A (en) | Power semiconductor device health monitoring circuit and method | |
| CN205749797U (en) | Audion reverse characteristic tester | |
| US11476687B2 (en) | Power indication circuit and power indication method | |
| CN104111398A (en) | Short-circuit detection device | |
| CN212391534U (en) | Current detection circuit | |
| JPH11275769A (en) | Automatic power supply turn-on circuit | |
| CN103439640A (en) | High-potential state detection device of anti-parallel thyristors | |
| CN203929854U (en) | Voltage magnitude testing circuit | |
| JP2012255784A (en) | Protection circuit and insulation resistance measurement device including the same | |
| CN205986807U (en) | A switch circuit and test system for voltage stress test | |
| TWI656349B (en) | Component power-on test method and power-on test system | |
| CN217504817U (en) | Sensor circuit and sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20191220 |