CN209250609U - A kind of bis- class short circuit current suppression circuit of SiC MOSFET - Google Patents
A kind of bis- class short circuit current suppression circuit of SiC MOSFET Download PDFInfo
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- CN209250609U CN209250609U CN201822039694.6U CN201822039694U CN209250609U CN 209250609 U CN209250609 U CN 209250609U CN 201822039694 U CN201822039694 U CN 201822039694U CN 209250609 U CN209250609 U CN 209250609U
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Abstract
The utility model provides a kind of bis- class short circuit current suppression circuit of SiC MOSFET and method, comprising: logic circuit, push-pull amplifier, grid voltage switching circuit and grid voltage detection circuit.When two class short circuits occurs, grid voltage will mutate, form higher due to voltage spikes, the utility model is by detecting grid voltage, and when grid voltage rises to certain threshold value, gate drive voltage is switched to lower value, it is in positive relationship characteristic according to grid voltage and short circuit current, its short circuit current will reduce, to reduce impact of the short circuit to SiC MOSFET, improve the short-circuit tolerance of device.
Description
Technical field
The present invention relates to a kind of bis- class short circuit current suppression circuits of SiC MOSFET, belong to power electronics field.
Background technique
SiC MOSFET has many advantages, such as that switching speed is fast as third generation power semiconductor, and switching loss is small,
It is considered as the switching device that Si IGBT can be replaced ideal in the future.But it is in short-circuit process, especially on state
The two classes short circuit of lower generation, grid voltage is inherently relatively high when due to normally, and the short circuit current rapid increase stage can lead to
Miller capacitance is crossed to gate charges, causes grid higher grid voltage spike occur, short circuit current can be higher than rated current
Several times, and there is current spike, much higher than the Si IGBT of ad eundem, short-circuit withstanding time will be greatly shortened, thus to it
The requirement of short-circuit protection circuit is more stringent in mating driving plate.Current short-circuit protection method is all from the fireballing angle of detection
Degree sets out, and foreshortens to short circuit duration even shorter within the short-circuit withstanding time that SiC MOSFET can bear, but be limited to
Delay, fault-signal delay of feedback and cut-off signals delay of detection circuit etc. influence, short usually when implementing protection shutdown
Road electric current has risen to high value, causes short circuit loss very big, and the junction temperature fluctuation of generation will cause SiC MOSFET
Certain impact.Furthermore short-circuit protection needs the method using soft switching, excessively high due to voltage spikes is prevented, due to excessive
Short circuit current, so that soft switching process is more slow, turn-off power loss also can be very high.
This just needs a kind of method for being able to suppress two class short circuit currents, and common method is limitation grid voltage spike,
The setting grid clamping circuit i.e. in driving, the grid voltage that grid voltage clamper as much as possible is opened in SiC MOSFET,
But only only reduce short circuit current spike, can not further decrease the short circuit current in entire short-circuit process, soft switching process according to
So slowly.Therefore, a kind of new scheme of urgent need solves the technical problem.
Summary of the invention
The present invention is directed to overcome the shortcomings of in the prior art, a kind of bis- class short circuit current suppression circuit of SiC MOSFET is proposed
And method.The circuit can further decrease two class short circuit currents, reduce impact of the short circuit current to SiC MOSFET, improve
The short-circuit withstanding time of SiC MOSFET.
To achieve the goals above, technical scheme is as follows: a kind of bis- class short circuit current of SiC MOSFET inhibition
Circuit and method, comprising: logic circuit, push-pull amplifier, grid voltage switching circuit and grid voltage detection circuit, in which:
The logic circuit controls gate drive voltage for realizing the logical combination of switching signal and feedback signal
The on-off of circuit；
The push-pull amplifier, for providing the driving voltage normally turned on and off to device under test grid；
The grid voltage switching circuit is smaller for switching to gate drive voltage in two class short-circuit process occur
Value, to inhibit short circuit current；
The grid voltage control circuit generates switching grid for detecting grid voltage spike when two class short troubles
The logical signal of driving voltage.
As an improvement of the present invention, the logic circuit, which is used, builds analog circuit with, NOT gate and realizes logic control,
Including the first NAND gate GNAND1, the second NAND gate GNAND2, the first NOT gate GINV1With the second NOT gate GINV2；Wherein, driving switch is believed
Number PWM and GINV1Input terminal, GNAND1First input end, GNAND2First input end be connected, GNAND1Output end and GNAND2
The second input terminal be connected.
As an improvement of the present invention, the push-pull amplifier includes grid resistance RGON1, grid resistance RGOFF, p-type
MOSFET M1, N-type MOSFET M2；Wherein, M1Drain electrode and RGON1One end be connected, M1Source electrode and positive supply VCC1It is connected, M1
Grid and GNAND2Output end be connected, M2Drain electrode and RGOFFOne end be connected, M2Source electrode be connected with negative supply VEE, M2's
Grid and GINV1Output end be connected.
As an improvement of the present invention, the grid voltage switching circuit includes diode D1, grid resistance RGON2, N-type
MOSFET M3；Wherein, D1Cathode and RGON2One end be connected, RGON2The other end and M3Drain electrode be connected, M3Source electrode with just
Power supply VCC2It is connected, M3Grid and GNAND1The second input terminal, GINV2Output end be connected.
As an improvement of the present invention, the positive supply V in the grid voltage switching circuitCC2Lower than in push-pull amplifier
Positive supply VCC1, while positive supply VCC2It is higher than SiC MOSFET threshold voltage of the grid V to be measuredth。
As an improvement of the present invention, the grid voltage detection circuit uses hysteresis comparator, which can make
The working condition for keeping short circuit current to inhibit in short-circuit process occurs in device under test for driving plate, until driving turns off device to be measured
Part.
As an improvement of the present invention, the grid voltage detection circuit includes: resistance R1, resistance R2, resistance R3, resistance R4
And amplifier U1, wherein R1One end and D1Anode, RGON1The other end, RGON2The other end, SiC MOSFET to be measured grid
Extremely it is connected, R1The other end and R2One end, U1Negative input end be connected, R2The other end ground connection, R3One end and R4One end,
U1Positive input terminal be connected, R3The other end and reference voltage VREFIt is connected, R4The other end and U1Output end, GINV2Input
End is connected.
As an improvement of the present invention, in the grid voltage detection circuit, the positive supply voltage of amplifier U1 is V+, bear power supply
Voltage is V-, reference voltage VREFFor positive value, and:
A kind of bis- class short circuit current suppression circuit of SiC MOSFET and the electric current suppressing method of method short circuit are as follows: grid voltage inspection
Slowdown monitoring circuit real-time detection grid voltage, when two class short circuits occurs, grid will will appear due to voltage spikes, when grid voltage is more than one
When determining threshold value, the positive driving voltage of push-pull amplifier is disconnected by logic circuit, and opened by grid voltage detection circuit output control signal
Pass gate press switching circuit, reduce gate drive voltage, according to the output characteristics of device, short circuit current with the reduction of grid voltage and
It reduces, to reach short circuit current inhibitory effect；When driving receives cut-off signals again, logic circuit bears push-pull amplifier
Driving voltage is open-minded, and device under test is turned off.
Compared with prior art, the invention has the following advantages that the present invention can be when occurring two class short circuits, by grid electricity
Grid voltage when pressure is pulled low to less than normally, so that short circuit current is reduced, when improving the short circuit tolerance of SiC MOSFET
Between, help to reduce short-circuit protection circuit design requirement.The decline of short circuit current helps to subtract so that short circuit loss greatly reduces
Turn-off time, over-voltage spike and turn-off power loss when small soft switching alleviate the junction temperature generated by loss and fluctuate to SiC
The impact of MOSFET.
Detailed description of the invention
Below with reference to attached drawing, the invention will be further described:
Fig. 1 is structural block diagram of the invention；
Fig. 2 is circuit diagram of the invention；
Fig. 3 is SiC MOSFET output characteristic curve schematic diagram；
Fig. 4 is two traditional class simulated short waveform diagrams；
Fig. 5 is two class simulated short waveform diagrams of the invention.
Specific embodiment:
In order to be more clearly understood that the content of present invention, with reference to the accompanying drawing and specific embodiment carries out the present invention
Explanation.
Each unit circuit connecting relation of the present invention is shown referring to Fig.1.A kind of bis- class short circuit current of SiC MOSFET inhibition electricity
Road and method, comprising: logic circuit, push-pull amplifier, grid voltage switching circuit and grid voltage detection circuit, in which: logic circuit
First input end is connected with driving switch signal, and the second input terminal of logic circuit is connected with the first output end of grid voltage detection circuit,
First output end of logic circuit, second output terminal are connected with push-pull amplifier first input end, the second input terminal respectively, institute
It states logic circuit third output end to be connected with the grid voltage switching circuit first input end, SiCMOSFET T1 grid to be measured and institute
The first output end of push-pull amplifier, first output end of grid voltage switching circuit, grid voltage detection circuit first input end is stated to be connected.
The specific device principle figure of each unit provided in this embodiment is as shown in Figure 2.
The logic circuit controls grid drive voltage circuit for realizing the logical combination of switching signal and feedback signal
On-off, realize logic control, including the first NAND gate G using analog circuit is built with, NOT gateNAND1, the second NAND gate
GNAND2, the first NOT gate GINV1With the second NOT gate GINV2；Wherein, driving switch signal PWM and GINV1Input terminal, GNAND1First
Input terminal, GNAND2First input end be connected, GNAND1Output end and GNAND2The second input terminal be connected.
The push-pull amplifier is used to provide the driving voltage normally turned on and off, including grid to device under test grid
Resistance RGON1, grid resistance RGOFF, p-type MOSFET M1, N-type MOSFET M2；Wherein, M1Drain electrode and RGON1One end be connected,
M1Source electrode and positive supply VCC1It is connected, M1Grid and GNAND2Output end be connected, M2Drain electrode and RGOFFOne end be connected, M2
Source electrode be connected with negative supply VEE, M2Grid and GINV1Output end be connected.
Positive supply V is set to reduce conduction voltage drop when normally according to the switching characteristic of SiC MOSFETCC1=
Negative supply V is arranged in 20V, cross talk effects when to prevent shutdownEE=-5V,
The grid voltage switching circuit is used to that gate drive voltage to be switched to smaller value in two class short-circuit process occur, from
And inhibit short circuit current, including diode D1, grid resistance RGON2, N-type MOSFET M3；Wherein, D1Cathode and RGON2One end
It is connected, RGON2The other end and M3Drain electrode be connected, M3Source electrode and positive supply VCC2It is connected, M3Grid and GNAND1It is second defeated
Enter end, GINV2Output end be connected.
Positive supply V in the grid voltage switching circuitCC2Lower than the positive supply V in push-pull amplifierCC1, while positive supply
VCC2It is higher than SiC MOSFET threshold voltage of the grid V to be measuredth, positive supply V is setCC2=15V.
The grid voltage detection circuit is used to detect grid voltage spike when two class short troubles, generates switching gate driving
The logical signal of voltage, using hysteresis comparator, comprising: resistance R1, resistance R2, resistance R3, resistance R4And amplifier U1, wherein
R1One end and D1Anode, RGON1The other end, RGON2The other end, SiC MOSFET to be measured grid be connected, R1It is another
End and R2One end, U1Negative input end be connected, R2The other end ground connection, R3One end and R4One end, U1Positive input terminal phase
Even, R3The other end and reference voltage VREFIt is connected, R4The other end and U1Output end, GINV2Input terminal be connected.
In the grid voltage detection circuit, the positive supply voltage of amplifier U1 is V+, negative supply voltage is V-, reference voltage VREFFor
Positive value, and:
In order to reduce the power supply in driving plate, positive supply voltage V is set+=VCC2, negative supply voltage V- ground connection, then refer to
Voltage VREFValue range are as follows:
Illustrate the relationship of grid voltage and short circuit current referring to SiC MOSFET output characteristics schematic diagram shown in Fig. 3.It is horizontal
Coordinate is the drain-source voltage V of SiC MOSFETDS, ordinate is the drain current I of SiC MOSFETD.It can be seen that SiC
Work is in linear zone when MOSFET normally, and when two class short circuits occurs, SiC MOSFET works in saturation region, with VG's
Increase, IDAlso increasing.Thus two class short circuit currents can be reduced by reducing the method for grid voltage.
Short circuit current process of inhibition of the invention are as follows: during SiC MOSFET T1 normal turn-off, grid voltage is negative
Driving voltage VEE, the negative input end voltage of amplifier U1 isLess than positive input terminal voltage, thus the output of amplifier U1
End voltage is VCC1, pass through the G in logic circuitINV2Make M3For off state；In SiC MOSFETT1During normally, grid
Pole tension is positive driving voltage VCC1, amplifier U1Negative input end voltage beAmplifier U1 positive input terminal voltage isBy formula (2) it is found that amplifier U1 positive input terminal voltage is greater than negative input end voltage, thus amplifier U1's is defeated
Outlet remains VCC1, M3It is still off state；The foregoing circuit course of work illustrates the M in normal switch state3It remains
Off state, grid voltage switching circuit do not work.
When two class short circuits occurs, grid voltage is by VCC1Moment rises, when grid voltage is more than that certain threshold value makes amplifier
U1Negative input end voltage is greater thanWhen, the output voltage of amplifier U1 is reversed to 0V, passes through the G in logic circuitINV2
Keep M3 open-minded, while passing through the G in logic circuitNAND1And GNAND2By M1Shutdown, grid voltage are dropped rapidly to VCC2, to press down
Short circuit current is made, at this time amplifier U1Positive input voltage becomesWhen driving receives cut-off signals PWM again, M2
Open so that grid voltage is dropped rapidly to VEE, so that amplifier U1Negative input voltage be less thanAmplifier U1Output electricity
Pressure is reversed to VCC1, M3 turns off again；Foregoing circuit course of work explanation switches electricity in grid voltage during haveing suffered of two classes short circuit
Road is always on state, until by T1Shutdown.
Two class short circuits are emulated using LTspice software, Fig. 4 is the waveform for not carrying out short circuit current inhibition,
When 11 μ s, the short circuit of two classes, drain short circuit electric current I occursDMaximum value is 1.2kA, in shutdown transient state VDSOver-voltage be 290V；Fig. 5
For using the waveform of two class short circuit current suppression circuits of the invention, when two class short circuits occurs, grid voltage is switched to 15V, leakage
Pole short circuit current IDMaximum value is suppressed to 460A, in shutdown transient state VDSOver-voltage be 190V；As can be seen from Figure 4 and Figure 5, it adopts
With two class short circuit current suppression circuits of the invention, short circuit current can be effectively inhibited, and reduce shutdown over-voltage.
It should be noted that above-described embodiment is only presently preferred embodiments of the present invention, there is no for the purpose of limiting the invention
Protection scope, the equivalent substitution or substitution made based on the above technical solution all belong to the scope of protection of the present invention.
Claims (8)
1. a kind of bis- class short circuit current suppression circuit of SiC MOSFET characterized by comprising logic circuit, push-pull amplifier,
Grid voltage switching circuit and grid voltage detection circuit, in which:
The logic circuit controls grid drive voltage circuit for realizing the logical combination of switching signal and feedback signal
On-off；
The push-pull amplifier, for providing the driving voltage normally turned on and off to device under test grid；
The grid voltage switching circuit, for gate drive voltage to be switched to smaller value in two class short-circuit process occur, thus
Inhibit short circuit current；
The grid voltage detection circuit generates switching gate driving electricity for detecting grid voltage spike when two class short troubles
The logical signal of pressure.
2. bis- class short circuit current suppression circuit of a kind of SiC MOSFET according to claim 1, which is characterized in that described to patrol
Volume circuit is used to be built analog circuit and realizes logic control, including the first NAND gate G with, NOT gateNAND1, the second NAND gate GNAND2,
First NOT gate GINV1With the second NOT gate GINV2；Wherein, driving switch signal PWM and GINV1Input terminal, GNAND1First input
End, GNAND2First input end be connected, GNAND1Output end and GNAND2The second input terminal be connected.
3. bis- class short circuit current suppression circuit of a kind of SiC MOSFET according to claim 1, which is characterized in that described to push away
Drawing amplifier includes grid resistance RGON1, grid resistance RGOFF, p-type MOSFET M1, N-type MOSFET M2；Wherein, M1Drain electrode with
RGON1One end be connected, M1Source electrode and positive supply VCC1It is connected, M1Grid and GNAND2Output end be connected, M2Drain electrode with
RGOFFOne end be connected, M2Source electrode be connected with negative supply VEE, M2Grid and GINV1Output end be connected.
4. bis- class short circuit current suppression circuit of a kind of SiC MOSFET according to claim 1, which is characterized in that the grid
Pressing switching circuit includes diode D1, grid resistance RGON2, N-type MOSFET M3；Wherein, D1Cathode and RGON2One end be connected,
RGON2The other end and M3Drain electrode be connected, M3Source electrode and positive supply VCC2It is connected, M3Grid and GNAND1The second input terminal,
GINV2Output end be connected.
5. bis- class short circuit current suppression circuit of a kind of SiC MOSFET according to claim 1, which is characterized in that the grid
Press the positive supply V in switching circuitCC2Lower than the positive supply V in push-pull amplifierCC1, while positive supply VCC2It is higher than SiC to be measured
MOSFET threshold voltage of the grid Vth。
6. bis- class short circuit current suppression circuit of a kind of SiC MOSFET according to claim 1, which is characterized in that the grid
Detection circuit is pressed to use hysteresis comparator.
7. bis- class short circuit current suppression circuit of a kind of SiC MOSFET according to claim 1, which is characterized in that the grid
Pressing detection circuit includes: resistance R1, resistance R2, resistance R3, resistance R4And amplifier U1, wherein R1One end and D1Anode,
RGON1The other end, RGON2The other end, SiC MOSFET to be measured grid be connected, R1The other end and R2One end, U1It is negative
Input terminal is connected, R2The other end ground connection, R3One end and R4One end, U1Positive input terminal be connected, R3The other end and reference
Voltage VREFIt is connected, R4The other end and U1Output end, GINV2Input terminal be connected.
8. bis- class short circuit current suppression circuit of a kind of SiC MOSFET according to claim 1, which is characterized in that the grid
It presses in detection circuit, the positive supply voltage of amplifier U1 is V+, negative supply voltage is V-, reference voltage VREFFor positive value, and:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822039694.6U CN209250609U (en) | 2018-12-05 | 2018-12-05 | A kind of bis- class short circuit current suppression circuit of SiC MOSFET |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822039694.6U CN209250609U (en) | 2018-12-05 | 2018-12-05 | A kind of bis- class short circuit current suppression circuit of SiC MOSFET |
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| CN209250609U true CN209250609U (en) | 2019-08-13 |
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| CN201822039694.6U Withdrawn - After Issue CN209250609U (en) | 2018-12-05 | 2018-12-05 | A kind of bis- class short circuit current suppression circuit of SiC MOSFET |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109743054A (en) * | 2018-12-05 | 2019-05-10 | 徐州中矿大传动与自动化有限公司 | A kind of bis- class short circuit current suppression circuit of SiC MOSFET and method |
| CN114094865A (en) * | 2021-11-12 | 2022-02-25 | 金琥新能源汽车(成都)有限公司 | Bridge arm crosstalk processing method and device, electronic equipment and storage medium |
-
2018
- 2018-12-05 CN CN201822039694.6U patent/CN209250609U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109743054A (en) * | 2018-12-05 | 2019-05-10 | 徐州中矿大传动与自动化有限公司 | A kind of bis- class short circuit current suppression circuit of SiC MOSFET and method |
| CN109743054B (en) * | 2018-12-05 | 2024-03-19 | 江苏国传电气有限公司 | SiC MOSFET class II short-circuit current suppression circuit and method |
| CN114094865A (en) * | 2021-11-12 | 2022-02-25 | 金琥新能源汽车(成都)有限公司 | Bridge arm crosstalk processing method and device, electronic equipment and storage medium |
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Address after: 221116 No. second Zhujianglu Road Industrial Park, Xuzhou high tech Zone, Jiangsu 7 Patentee after: Jiangsu Guochuan Electric Co.,Ltd. Address before: 221116 No. second Zhujianglu Road Industrial Park, Xuzhou high tech Zone, Jiangsu 7 Patentee before: CHINA MINING DRIVES & AUTOMATION Co.,Ltd. |
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| AV01 | Patent right actively abandoned |
Granted publication date: 20190813 Effective date of abandoning: 20240319 |
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| AV01 | Patent right actively abandoned |
Granted publication date: 20190813 Effective date of abandoning: 20240319 |
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