CN109698611B - Multi-stage grid voltage reduction type SiC-MOSFET drive circuit - Google Patents

Multi-stage grid voltage reduction type SiC-MOSFET drive circuit Download PDF

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CN109698611B
CN109698611B CN201910062815.5A CN201910062815A CN109698611B CN 109698611 B CN109698611 B CN 109698611B CN 201910062815 A CN201910062815 A CN 201910062815A CN 109698611 B CN109698611 B CN 109698611B
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CN109698611A (en
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肖华锋
吴立亮
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Southeast University
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/02—Details
    • H02H3/06—Details with automatic reconnection
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Power Engineering (AREA)
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  • Power Conversion In General (AREA)

Abstract

The invention discloses a multi-stage grid voltage reduction type SiC-MOSFET (silicon carbide-metal oxide semiconductor field effect transistor) driving circuit, which comprises a short circuit detection circuit, a turn-off logic control circuit, a totem-pole circuit, a first-stage grid voltage reduction circuit and a second grid voltage reduction soft turn-off circuit; the short-circuit detection circuit judges that the short-circuit peak current detection short-circuit fault really occurs, and the first-stage grid-voltage reduction circuit reduces and maintains the voltage of the SiC-MOSFET gate to the maximum short-circuit tolerance time, so that the short-circuit ride-through capability of the device is improved; the gate voltage is further reduced through the second-stage grid voltage reduction circuit to realize soft turn-off, so that the turn-off voltage spike is suppressed. The invention ensures that the SiC-MOSFET is safely turned off under the short-circuit working condition, effectively increases the short-circuit tolerance time of the SiC-MOSFET and improves the fault ride-through capability.

Description

Multi-stage grid voltage reduction type SiC-MOSFET drive circuit
Technical Field
The invention belongs to the field of power semiconductor devices, and particularly relates to a multistage grid voltage reduction type SiC-MOSFET driving circuit.
Background
With the increasing market demand for high efficiency and high power density converters, such as new energy and the rise of electric vehicles, the wide bandgap device SiC-MOSFET (silicon carbide-metal oxide semiconductor field effect transistor) is gradually applied. Compared with the traditional Si-based power device, the SiC-MOSFET has weak short-circuit tolerance and is greatly influenced by working conditions, and when the SiC-MOSFET works under the conditions of high direct-current bus voltage, high environmental temperature and the like, the short-circuit tolerance is greatly weakened. Meanwhile, in order to realize rapid on/off to reduce switching loss and reduce on resistance to reduce on loss, the positive driving voltage of the SiC-MOSFET is usually maintained between +18V and +22V, but the high positive driving voltage causes the short-circuit current flowing through the SiC-MOSFET to be rapidly increased during short-circuit fault, so that the junction temperature of the device is rapidly increased, and the short-circuit tolerance capability of the SiC-MOSFET is weakened.
When short-circuit fault occurs, the short-circuit current flowing through the SiC-MOSFET can reach 5-8 times of rated current, and meanwhile, because the junction capacitance of the SiC-MOSFET is small, the switching speed is high and parasitic inductance exists in a main circuit, if hard turn-off is adopted, voltage spike can be caused at two ends of a drain-source electrode of the SiC-MOSFET, so that the SiC-MOSFET is damaged by overvoltage.
The patent CN106027011A aims at the problem of weak short circuit tolerance caused by high driving positive voltage, and realizes quick detection and protection of short circuit fault by detecting voltage signals at two ends of a source parasitic inductor, but this method cannot determine the true occurrence of short circuit fault, and is prone to false triggering (complete turn-off within 200 ns); meanwhile, the soft turn-off resistor is directly adopted to turn off regardless of the magnitude of the short-circuit current, so that a certain effect of restraining the turn-off peak voltage is achieved, and the possibility of causing the turn-off voltage peak to break down the SiC-MOSFET is still existed.
The document Short-circuit protection of 1200V SiC MOSFET T-type module in PV inverter application (Y.Shi et al.2016IEEE Energy Conversion consistency and exposure, Milwaukee, WI,2016, pp.1-5.) reduces the Short-circuit current by reducing the gate voltage immediately after the Short-circuit fault is detected, and soft turn-off is realized. The method prolongs the short-circuit tolerance time, but the short-circuit tolerance capability of the device is not fully utilized, and short-circuit fault ride-through cannot be realized.
Disclosure of Invention
The purpose of the invention is as follows: in order to solve the problems, the invention provides a multi-stage grid-voltage-reducing type SiC-MOSFET driving circuit.
The technical scheme is as follows: in order to realize the purpose of the invention, the technical scheme adopted by the invention is as follows: a multi-stage grid voltage reduction type SiC-MOSFET drive circuit is characterized by comprising a short circuit detection circuit turn-off logic control circuit, a totem-pole circuit, a first-stage grid voltage reduction circuit and a second-stage grid voltage reduction soft turn-off circuit;
the short-circuit detection circuit comprises a first comparator, a buffer resistor, a buffer capacitor and a second comparator; the non-inverting input end of the first comparator and the detection voltage vdesatConnected with the inverting input terminal and the threshold voltage VrefAre connected with the connection pointThe time delay circuit is connected with the inverting input end of the second comparator; the output pin of the first comparator is connected with one end of the buffer resistor, and the connection point is simultaneously connected with the gate of a third switching tube of the first-stage grid voltage reduction circuit; the other end of the buffer resistor is connected with one end of the buffer capacitor, the connection point is simultaneously connected with a pin at the non-inverting input end of the second comparator, and the other end of the buffer capacitor is grounded; the output of the second comparator is connected with an input pin 1 of the turn-off logic control circuit;
an input pin 2 of the turn-off logic control circuit is connected with a PWM (pulse-width modulation) driving signal, an input pin 3 of the turn-off logic control circuit is connected with the output of the first comparator, an output pin 4 of the turn-off logic control circuit is connected with a gate electrode of a fourth switching tube of the second-stage grid voltage reduction soft turn-off circuit, and an output pin 5 of the turn-off logic control circuit is connected with an EN (enable;
the totem-pole circuit comprises an upper end P-MOSFET switch tube and a lower end N-MOSFET switch tube; the upper end P-MOSFET switching tube gate pole is connected with the lower end N-MOSFET switching tube gate pole, and the connecting point is connected with the output of the level conditioning circuit; upper end P-MOSFET switch tube source and driving positive voltage VCCConnected, drain connected to the drive on-resistance RonLower end N-MOSFET switch tube source and driving negative pressure VEEConnected and drain connected with a drive turn-off resistor Roff；
The first-stage grid voltage reduction circuit comprises a first diode, a second resistor and a third switching tube; one end of the first diode is connected with one end of the second resistor, the other end of the second resistor is connected with the drain electrode of the third switching tube, and the source electrode of the third switching tube is grounded;
the second-stage grid-voltage-reducing soft turn-off circuit comprises a second diode, a third resistor and a fourth switching tube; one end of the second diode is connected with one end of the third resistor, the other end of the third resistor is connected with the drain electrode of the fourth switching tube, and the source electrode of the fourth switching tube is grounded;
drive on-resistance RonThe other end is connected with a gate pole of the SiC-MOSFET to drive a turn-off resistor RoffThe other end is connected with a SiC-MOSFET gate pole; the other end of the first diode is connected with the SiC-MOSFET gate electrode, and the other end of the second diode is connected with the SiC-MOSFET gate electrode.
Further, the third switching tube and the fourth switching tube are N-MOSFET switching tubes.
Further, when the SiC-MOSFET has a short-circuit fault, when the short-circuit current rises to the short-circuit peak current, the first comparator outputs a high level, the third switching tube in the first-stage buck voltage circuit is turned on, the second resistor and the driving on-resistor form a series circuit, and the gate voltage of the SiC-MOSFET falls to VG1。
Further, the detection voltage vdesatLapse of the blank time tblankRises to a threshold voltage VrefBlank time tblankThe time from the rise of the short-circuit current to the short-circuit peak current is given.
Further, when the high level time of the driving signal is lower than the short circuit tolerance time, the output pin 4 of the turn-off logic control circuit outputs high level when the driving signal is changed from high to low, the fourth switching tube of the second-stage gate-voltage reduction soft turn-off circuit is controlled to be switched on, the second resistor and the third resistor form a parallel branch and are connected with the driving switch-on resistor in series, the voltage of the gate electrode of the SiC-MOSFET is reduced to VG2(ii) a When the short-circuit current is reduced to the rated current, the output pin 5 of the turn-off logic control circuit is lowered, and soft turn-off and short-circuit protection are realized; when the high level time of the driving signal is higher than the short-circuit tolerance time, the second comparator outputs high level when the short-circuit tolerance time is reached, the output pin 4 of the logic control circuit is controlled to be turned off and output high level, the fourth switch tube of the second-stage gate-voltage reduction soft turn-off circuit is turned on, and the gate voltage of the SiC-MOSFET is reduced to VG2(ii) a When the short-circuit current is reduced to the rated current, the output pin 5 of the turn-off logic control circuit is lowered, and soft turn-off and short-circuit protection are realized.
Further, the output of the first comparator charges the buffer capacitor through the buffer resistor, the voltage of the in-phase input end of the second comparator is capacitor voltage, and the voltage of the in-phase input end of the second comparator is increased to a threshold voltage V by setting the buffer resistor and the buffer capacitorrefThe time of (a) is a short circuit withstand time.
Has the advantages that: the invention can ensure that the SiC-MOSFET is safely turned off under the short-circuit working condition, effectively increase the short-circuit tolerance time and improve the fault ride-through capability; the two-stage grid voltage reduction circuit can obviously reduce short-circuit current and realize soft turn-off, thereby inhibiting the turn-off voltage peak of the SiC-MOSFET.
Drawings
FIG. 1 is a schematic diagram of a multi-level buck SiC-MOSFET driver circuit;
FIG. 2 is a logic diagram of the short-circuit protection and each switching tube when the conducting time of the driving signal is shorter than the short-circuit endurance time;
FIG. 3 is a logic diagram of the short-circuit protection and each switching tube when the conduction time of the driving signal is longer than the short-circuit endurance time;
FIG. 4 is a schematic circuit diagram of the driver short circuit test platform;
FIG. 5 shows the result of the short-circuit protection experiment when the on-time of the driving signal is shorter than the short-circuit endurance time;
fig. 6 shows the result of the short-circuit protection experiment when the on-time of the driving signal is longer than the short-circuit endurance time.
Detailed Description
The technical solution of the present invention is further described below with reference to the accompanying drawings and examples.
As shown in fig. 1, the multi-stage gate-down type SiC-MOSFET driving circuit according to the present invention includes a short circuit detection circuit 1, a turn-off logic control circuit 2, a totem pole circuit 3, a first-stage gate-down voltage circuit 4, and a second gate-down voltage soft turn-off circuit 5.
The short-circuit detection circuit 1 comprises a first comparator CMP1Buffer resistor R1Buffer capacitor C1And a second comparator CMP2(ii) a The totem-pole circuit 3 comprises an upper end P-MOSFET switching tube S1And a lower end N-MOSFET switch tube S2(ii) a The first stage of the grid voltage reducing circuit 4 is composed of a first diode D1A second resistor R2And N-MOSFET third switch tube S3Forming; the second stage of the grid voltage reduction soft turn-off circuit 5 consists of a second diode D2A third resistor R3And N-MOSFET fourth switch tube S4And (4) forming.
First comparator CMP in short-circuit detection circuit 11Non-inverting input terminal and detection voltage vdesatConnected with the inverting input terminal and the threshold voltage VrefIs connected with the connecting pointSecond comparator CMP2Is connected to the inverting input terminal. First comparator CMP1Output pin and buffer resistor R1One end of the first-stage grid voltage reduction circuit is connected with a third switching tube S of the first-stage grid voltage reduction circuit3A gate connection. Buffer resistor R1The other end of the capacitor and a buffer capacitor C1Is connected with one end of the second comparator CMP2The pin of the non-inverting input end is connected with the buffer capacitor C1The other end is connected to ground, a second comparator CMP2Is connected to the input pin 1 of the shutdown logic control circuit 2.
Input pin 1 of off logic control circuit 2 and second comparator CMP2An output pin connected to the first comparator CMP, an input pin 2 connected to the PWM drive signal, and an input pin 3 connected to the first comparator CMP1The output of the turn-off logic control circuit is connected, and the output pin 4 of the turn-off logic control circuit is connected with a fourth switching tube S of the second-stage grid-voltage-reduction soft turn-off circuit4The gate pole is connected, and the output pin 5 of the logic control circuit is connected with the EN enabling end.
Upper end P-MOSFET switch tube S of totem-pole circuit 31Gate and lower end N-MOSFET switch tube S2A gate pole connected with the output of the level conditioning circuit and an upper P-MOSFET switching tube S1Source and driving positive voltage VCCConnected, upper end P-MOSFET switching tube S1The drain electrode is connected with one end of a drive on-resistance Ron of the gate electrode of the SiC-MOSFET, and the lower end of the drive on-resistance Ron is provided with an N-MOSFET switching tube S2Source and driving negative voltage VEEConnected, lower end N-MOSFET switch tube S2Drive turn-off resistance R of drain electrode and gate electrode of SiC-MOSFEToffAre connected at one end.
First diode D in first stage gate voltage reducing circuit 41One end of the first diode D is connected with a gate electrode of the SiC-MOSFET1The other end and a second resistor R2Is connected to one end of a second resistor R2And the other end of the third switching tube S3Is connected with the drain of the third switching tube S3Is connected with the ground, and a third switch tube S3Gate and first comparator CMP1The outputs are connected.
Second diode D in second-stage grid voltage reduction soft turn-off circuit 52One end ofA second diode D connected to the gate of the SiC-MOSFET2The other end of the resistor and a third resistor R3Is connected to a third resistor R3And the other end of the first switch tube S and the fourth switch tube S4Is connected with the drain electrode of the fourth switching tube S4Is connected with the ground, and a fourth switching tube S4Is connected to the output pin 4 of the off logic control circuit.
FIG. 2 and FIG. 3 are timing diagrams of short-circuit protection in the event of short-circuit failure, when a SiC-MOSFET has short-circuit failure, the detection voltage vdesatLapse of the blank time tblankRises to a threshold voltage VrefBlank time tblankThe time from the rise of the short-circuit current to the short-circuit peak current is given.
When the short-circuit current rises to the short-circuit peak current, the first comparator CMP of the short-circuit detection circuit1Third switch tube S in first stage grid voltage reducing circuit for outputting high level3Is turned on through the second resistor R2And gate drive on-resistance RonForming a series loop, and the gate voltage of SiC-MOSFET is reduced to VG1：
Figure BDA0001954709000000041
According to the invention, the first-stage grid voltage reduction branch is introduced, and the grid voltage is reduced when a short-circuit fault is detected, so that the short-circuit current is reduced, and the short-circuit tolerance time is increased.
First comparator CMP1The output is passed through a buffer resistor R1Buffer capacitor C1Charging, second comparator CMP2The same-phase input end voltage of the buffer resistor R is set to be a capacitor voltage1And a buffer capacitor C1Make the second comparator CMP2Voltage rise to threshold voltage V at in-phase input terminalrefThe time of (a) is a short circuit withstand time.
When the high level time of the driving signal is shorter than the short circuit tolerant time, as shown in fig. 2, the output pin 4 of the turn-off logic control circuit outputs high level when the driving signal changes from high to low, and controls the fourth switching tube S of the second stage gate-down voltage soft turn-off circuit4Conducting; a second resistor R2Third resistor R3Form a parallel branch circuit, and drive the on-resistance R with the gateonGate voltage drop to V of series SiC-MOSFETG2：
Figure BDA0001954709000000042
When the short-circuit current is reduced to the rated current, the output pin 5 of the turn-off logic control circuit is lowered, and soft turn-off and short-circuit protection are realized.
When the high time of the driving signal is higher than the short-circuit endurance time, as shown in FIG. 3, the second comparator CMP2Outputting high level after short circuit endurance time, controlling an output pin 4 of a turn-off logic control circuit to output high level, and a fourth switching tube S of a second-stage grid voltage reduction soft turn-off circuit4On, gate voltage of SiC-MOSFET is reduced to VG2(ii) a When the short-circuit current is reduced to the rated current, the output pin 5 of the turn-off logic control circuit is lowered, and soft turn-off and short-circuit protection are realized.
CMP when short circuit fault is cleared within short circuit withstand time1Third switching tube S of first-stage grid voltage reduction circuit for outputting low level3Turn off, and the gate drive voltage of SiC-MOSFET is restored to VCCThe short-circuit fault ride-through is realized, and the robustness and the reliability of the driving circuit are improved.
The turn-off logic control circuit turns on a second gate voltage reduction branch when the control circuit gives a turn-off signal or the short-circuit time reaches the short-circuit tolerance time, R2→S3→ GND and R3→S4→ GND parallel connection, and the gate voltage of SiC-MOSFET is reduced to VG2. Due to R3The design can be flexible, and the short-circuit current after the second-stage grid voltage reduction can be effectively controlled, so that the turn-off voltage spike of the SiC-MOSFET is inhibited.
FIG. 4 is a short circuit test platform, V, for testing the driving protection circuitDCIs a DC power supply, CDCSupporting capacitors, Q, for DC buses1Is a SiC-MOSFET and the drive is the drive protection circuit of the invention.
Fig. 5 is a short-circuit waveform diagram of a SiC-MOSFET corresponding to the driving protection method of the present invention, where the time of high level of the corresponding driving signal is lower than the short-circuit endurance time, the experimental result is consistent with the theoretical analysis described above, and the second-stage gate voltage drop is performed when the driving signal changes from high level to low level, so as to achieve the suppression of short-circuit soft turn-off and turn-off voltage spikes.
Fig. 6 is a short-circuit waveform diagram of a SiC-MOSFET corresponding to the driving protection method of the present invention, where the high level time of the corresponding driving signal is higher than the short-circuit endurance time, the experimental result is consistent with the theoretical analysis described above, and the second-stage gate voltage drop is performed when the device reaches the short-circuit endurance time, so as to achieve short-circuit protection and suppression of turn-off voltage spike.

Claims (6)

1. A multi-stage grid voltage reduction type SiC-MOSFET drive circuit is characterized by comprising a short circuit detection circuit (1), a turn-off logic control circuit (2), a totem-pole circuit (3), a first-stage grid voltage reduction circuit (4) and a second-stage grid voltage reduction soft turn-off circuit (5);
the short-circuit detection circuit (1) comprises a first Comparator (CMP)1) Buffer resistor (R)1) Buffer capacitor (C)1) And a second Comparator (CMP)2) (ii) a The non-inverting input end of the first comparator and the detection voltage vdesatConnected with the inverting input terminal and the threshold voltage VrefThe connection point is simultaneously connected with the inverting input end of the second comparator; the output pin of the first comparator is connected with one end of the buffer resistor, and the connection point is simultaneously connected with a third switching tube (S) of the first-stage grid-voltage-reducing circuit (4)3) A gate connection; the other end of the buffer resistor is connected with one end of the buffer capacitor, the connection point is simultaneously connected with a pin at the non-inverting input end of the second comparator, and the other end of the buffer capacitor is grounded; the output of the second comparator is connected with an input pin 1 of a turn-off logic control circuit (2);
an input pin 2 of the turn-off logic control circuit (2) is connected with a PWM (pulse-width modulation) driving signal, an input pin 3 is connected with the output of the first comparator, and an output pin 4 is connected with a fourth switching tube (S) of the second-stage grid-voltage-reduction soft turn-off circuit (5)4) The gate pole is connected, and the output pin 5 is connected with the EN enabling end;
the totem-pole circuit (3) comprises an upper end P-MOSFET switching tube (S)1) And a lower end N-MOSFET switch tube (S)2) (ii) a The upper end P-MOSFET switching tube gate pole is connected with the lower end N-MOSFET switching tube gate pole, and the connecting point is connected with the output of the level conditioning circuit; upper end P-MOSFET switch tube source and driving positive voltage VCCConnected, drain connected to the drive on-resistance (R)on) Lower end N-MOSFET switch tube source and driving negative pressure VEEConnected, the drain is connected with a drive turn-off resistor (R)off)；
The first stage of the gate voltage reduction circuit (4) comprises a first diode (D)1) A second resistor (R)2) And a third switching tube (S)3) (ii) a One end of the first diode is connected with one end of the second resistor, the other end of the second resistor is connected with the drain electrode of the third switching tube, and the source electrode of the third switching tube is grounded;
the second-stage grid voltage reduction soft turn-off circuit (5) comprises a second diode (D)2) A third resistor (R)3) And a fourth switching tube (S)4) (ii) a One end of the second diode is connected with one end of the third resistor, the other end of the third resistor is connected with the drain electrode of the fourth switching tube, and the source electrode of the fourth switching tube is grounded;
drive on resistance (R)on) The other end is connected with a gate pole of the SiC-MOSFET to drive a turn-off resistor (R)off) The other end is connected with a SiC-MOSFET gate pole; the other end of the first diode is connected with the SiC-MOSFET gate electrode, and the other end of the second diode is connected with the SiC-MOSFET gate electrode.
2. The multi-stage buck-gate SiC-MOSFET drive circuit according to claim 1, wherein the third switching tube (S)3) And a fourth switching tube (S)4) Is an N-MOSFET switching tube.
3. The multi-stage buck-gate SiC-MOSFET driver circuit according to claim 1, wherein the first Comparator (CMP) is configured to generate a short-circuit peak current after a short-circuit current rises to a short-circuit peak current in the event of a short-circuit fault in the SiC-MOSFET1) A third switching tube (S) in the first stage of grid voltage reduction circuit (4) for outputting high level3) Guide tubeOn, the second resistance (R)2) And drive on-resistance (R)on) Forming a series loop, and the gate voltage of SiC-MOSFET is reduced to VG1。
4. The multi-level buck SiC-MOSFET driver circuit of claim 3, wherein the detection voltage v isdesatLapse of the blank time tblankRises to a threshold voltage VrefBlank time tblankThe time from the rise of the short-circuit current to the short-circuit peak current is given.
5. The multi-stage gate-down type SiC-MOSFET driving circuit of claim 1, wherein when the high level time of the driving signal is lower than the short circuit endurance time, the output pin 4 of the turn-off logic control circuit outputs a high level when the driving signal goes from high to low, and controls the fourth switching tube of the second stage gate-down soft turn-off circuit to be turned on, the second resistor and the third resistor form a parallel branch and are connected in series with the driving on-resistor, and the gate voltage of the SiC-MOSFET is dropped to VG2(ii) a When the short-circuit current is reduced to the rated current, the output pin 5 of the turn-off logic control circuit is lowered, and soft turn-off and short-circuit protection are realized; wherein the buffer resistance (R) is adjusted1) And a buffer capacitor (C)1) Make the second Comparator (CMP)2) Voltage rise to threshold voltage (V) at in-phase inputref) The time of (a) is a short circuit withstand time;
when the high level time of the driving signal is higher than the short-circuit tolerance time, the second comparator outputs high level when the short-circuit tolerance time is reached, the output pin 4 of the logic control circuit is controlled to be turned off and output high level, the fourth switch tube of the second-stage gate-voltage reduction soft turn-off circuit is turned on, and the gate voltage of the SiC-MOSFET is reduced to VG2(ii) a When the short-circuit current is reduced to the rated current, the output pin 5 of the turn-off logic control circuit is lowered, and soft turn-off and short-circuit protection are realized.
6. The multi-stage buck-gate SiC-MOSFET driver circuit according to claim 5, wherein the first comparator output charges a buffer capacitor through a buffer resistor,the voltage of the same-phase input end of the second comparator is capacitor voltage, and the voltage of the same-phase input end of the second comparator is increased to a threshold voltage V by setting the buffer resistor and the buffer capacitorrefThe time of (a) is a short circuit withstand time.
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CN111030654A (en) * 2019-11-29 2020-04-17 山东航天电子技术研究所 Solid-state power controller
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