CN205584154U - RSD trigger circuit based on pulse step up transformer and magnetic switch - Google Patents
RSD trigger circuit based on pulse step up transformer and magnetic switch Download PDFInfo
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- CN205584154U CN205584154U CN201620058328.3U CN201620058328U CN205584154U CN 205584154 U CN205584154 U CN 205584154U CN 201620058328 U CN201620058328 U CN 201620058328U CN 205584154 U CN205584154 U CN 205584154U
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Abstract
The utility model discloses a RSD trigger circuit based on pulse step up transformer and magnetic switch, including charging circuit, the main circuit that discharges, RSD trigger circuit and control circuit. Main circuit series connection RSD trigger circuit discharges, charging circuit connects in parallel in main circuit, RSD trigger circuit both ends, control circuit connects in parallel in charging circuit and RSD trigger circuit both ends, the main circuit that discharges includes RSD switch, magnetic ring L, main capacitance C0 and load Z0, RSD trigger circuit includes the low pressure pulse power, impulse transformer T, semiconductor switch K21, K22, magnetic switch LC, magnetic switch L21, L22 and trigger electric capacity cc. The utility model discloses having the advantage of direct preliminary filling and resonance preliminary filling, having increased the parameter matching scope of component, the reliability is high, has reduced the bulk volume of magnetic core, has improved the utilization ratio of preliminary filling electric charge.
Description
Technical field
The present invention relates to semiconductor switch technical field, relate in particular to a kind of RSD based on pulse booster transformer and magnetic switch and trigger circuit.
Background technology
The eighties in 20th century, it is open-minded that the reverse switch transistor (RSD) of former Soviet Union academician I.V.Grekhov invention can realize high di/dt big electric current microsecond.RSD device is a kind of by tens thousand of IGCTs and the alternate device being arranged in parallel of transistor cellular, there is no the control pole of triode thyristor, use confined plasma layer triggering mode, inverse injection trigger current, whole chip area achieves synchronization uniform conducting, eliminate the existence of triode thyristor device from device principle opens the Localization Phenomenon, thus it is open-minded to realize high di/dt microsecond, the most at short notice by the biggest electric current.The typical case of RSD switch triggers (preliminary filling) circuit direct preliminary filling, resonance preliminary filling, transformer boost preliminary filling etc. three kinds.The triggering mode of single RSD device has direct triggering, resonant trigger two kinds, uses directly triggering to open mode and opens efficiency height, is lost little, and charging circuit configuration is more complicated, is applied to single pulse electric discharge more.The energy loss of resonant trigger is relatively big, but relatively directly triggers and be more easily implemented control, is more suitable for repetitive frequency pulsed electric discharge.The triggering of the RSD switch of many RSD devices in series compositions can be to use the modes such as directly triggering, resonant trigger and transformer boost triggering.According to the needs of different actual application, different RSD is used to trigger circuit.Patent of invention " the triggering circuit of a kind of reverse switch transistor " (numbering CN201310109983.8) uses H bridge type to trigger the circuit triggering for low-voltage, high-current RSD device, the charging and discharging of pre-charging capacitor is respectively by two groups of diagonal thyristor switch or the IGBT on-off control of H bridge, compared with tradition precharging circuit, this circuit combines and directly triggers and the advantage of resonant trigger circuit, improves the preliminary filling efficiency of RSD.But compared with tradition precharging circuit, this circuit adds three quasiconductor preliminary filling switches, and the control system of precharging circuit is more complicated, significantly increases the cost of preliminary filling switch, and is only applicable to the triggering of low pressure RSD switch, reduces the practicality of improved circuit.
Summary of the invention
For solving the problems referred to above, the invention provides a kind of reverse switch transistor based on pulse booster transformer and magnetic switch and trigger circuit.
The concrete technical scheme used is as follows:
A kind of RSD based on pulse booster transformer and magnetic switch triggers circuit, and including charging circuit, discharge main circuit, and RSD triggers circuit and control circuit.Described electric discharge main circuit series connection RSD triggers circuit, and described charging circuit is parallel to main circuit, RSD triggers circuit two ends；Described control circuit is parallel to charging circuit and RSD triggers circuit two ends；Described electric discharge main circuit includes RSD switch, magnet ring L, main capacitance C0 and the load Z0 sequentially connected；Described RSD triggers circuit and includes action of low-voltage pulse power supply, pulse transformer T, semiconductor switch K21, semiconductor switch K22, magnetic switch LC, magnetic switch L21, magnetic switch L22 and triggering electric capacity Cc；Described pulse transformer T, semiconductor switch K21, magnetic switch LC, magnet ring L, main capacitance C0, load Z0, semiconductor switch K22 and triggering electric capacity Cc sequentially connect, constitute preliminary filling current loop；Described magnetic switch L21 one end be connected to semiconductor switch K21 and magnetic switch LC be connected in series end, the other end is connected to semiconductor switch K22 and triggering electric capacity Cc is connected in series end；Described magnetic switch L22 one end be connected to load Z0 and semiconductor switch K22 be connected in series end, the other end is connected to trigger electric capacity Cc and pulse transformer T is connected in series end.
By using this circuit structure, its work process is as follows:
Action of low-voltage pulse power supply is exported to high-pressure side by pulse transformer T > voltage of 2V0, form the preliminary filling electric current i1 of minor diameter semiconductor switch K21, K22, i1 is high di/dt short duration current, its trend is the reverse preliminary filling electric current of K21, K22 for T-K21-Lc-L-C0-Z0-K22-Cc-T, i1, after transformator T is saturated, i1 drops to 0, the voltage triggering electric capacity Cc is applied on K21, K22, K21, K22 forward conduction, RSD reverse-conducting.After T is saturated, triggering electric capacity Cc and discharged by K21, K22, form the reverse preliminary filling electric current of RSD, current path is CC-K22-RSD-Lc-K21-T-CC.After L is saturated, main capacitance C0 is discharged by RSD, forms required pulse current i3 on load Z0, and current trend is C0-L-RSD-Z0-C0.After L21 and L22 is saturated, the discharge path triggering electric capacity Cc is Cc-K21-L21-Cc, and Cc-K22-L22-Cc.
Preferably, described magnetic switch L21, L22 are wound around some circles by wire and constitute on the magnetic core of ferrite or annular micro-crystal ferrite thin film.
It is further preferred that described action of low-voltage pulse power supply can use any repetitive frequency pulsed power supply of all kinds meeting circuit requirement, the switch of the pulse power can use RSD or IGCT or IGBT or the pulse power of power MOSFET or IGCT or GTO.When using the pulse power based on IGCT, this pulse power is divided into charging circuit and discharge circuit two parts.Wherein, discharge circuit includes discharge capacity C0, magnetic switch L, semiconductor power switch K, the trigger current of output K21, K22.Semiconductor power switch K may be used without based on IGBT or the semiconductor power switch of power MOSFET or IGCT or GTO.
Compared with prior art, the present invention has direct preliminary filling and the advantage of resonance preliminary filling, reduces the complexity of circuit, improves reliability, adds the parameter matching range of element, reduces the cumulative volume of magnetic core, improves the utilization rate of pre-charge.
Accompanying drawing explanation
Fig. 1 is the population structure block diagram of the present invention；
Fig. 2 is the circuit structure diagram of the present invention；
Fig. 3 is the circuit structure diagram of the embodiment of the present invention 1；
Fig. 4 is the circuit structure of action of low-voltage pulse power supply；
Fig. 5 is the circuit structure diagram of a kind of double-thyristor synchronous drive circuit.
Detailed description of the invention
In order to be illustrated more clearly that technical scheme, below the work process of the present invention is further described.
Embodiment 1: a kind of RSD based on pulse booster transformer and magnetic switch triggers circuit: include action of low-voltage pulse power supply, pulse booster transformer T, semiconductor switch K21, semiconductor switch K22, magnetic switch L21, magnetic switch L22, branch impedance Lc1, branch impedance Lc2, trigger circuit impedance Lc.
The work process of its circuit is as follows: action of low-voltage pulse power supply is exported to high-pressure side by pulse transformer T > 2V0 voltage, form the high di/dt burst pulse preliminary filling electric current of minor diameter semiconductor switch K21, K22, current path is T-K21-Lc-L-C0-Z0-K22-Cc-T.The path of preliminary filling electric current is CC-K22-RSD-Lc-K21-T-Cc.After T is saturated, the forward voltage of Cc is applied on K21, K22, K21, K22 forward conduction, and Cc is discharged by K21, K22, forms the reverse preliminary filling electric current of RSD, and current path is Cc-K22-RSD-Lc-K21-T-Cc.
Action of low-voltage pulse power supply as shown in Figure 4 is a kind of pulse power based on RSD switch, triggers circuit including charging circuit, discharge circuit, RSD.Wherein, C0 is discharge capacity, and Cc is the triggering electric capacity of RSD, and Kc is for triggering switch, and L, Lc are magnetic switch, and R0, R1, R3, Rc are branch resistance, and L0, L2, L3 are shunt inductance, and MRC is the degaussing circuit of magnetic switch.
Its work process is summarized as follows: in circuit, two electric capacity C0 and CC are charged to same voltage U0, after charging terminates, preliminary filling switch KC Guan Bi, preliminary filling switch KC can be IGCT or IGBT, power MOSFET, it is used herein as IGCT, electric capacity CC starts to discharge through L2, is transferred in inductance LC by the energy of electric capacity.When CC tension discharge to zero, the electric current in inductance reaches maximum, the voltage reversal that RSD bears, and LC carries out reverse preliminary filling to RSD.After magnetic switch L is saturated, pulse booster transformer T is discharged by C0 through L and RSD, the trigger current needed for high-pressure side output K21, K22 of T.
A kind of double-thyristor synchronous drive circuit as shown in Figure 5:
TLP521 is light coupling device part, for transmitting switch signal, isolated drive circuit and low-voltage control circuit；IR2110 is IGBT driving chip, and it is maximum pressure for 500V, and through-current capability is 2A, and outputting drive voltage is 10～20V, and service time, turn-off time and delay time are respectively 120ns, 94ns, 10ns.On same annular ferrite core, one former limit of coiling, two secondary coil compositions trigger transformator T, can realize the synchronization conducting of series thyristor.The high level of IR2110 output is input to IGBT grid, IGBT turns on, DC source produces a zooming current impulse on the former limit of pulse transforming coil, this current impulse produces two zooming amplitude gate drive current at the secondary of T, trigger by force IGCT, strengthen the high di/dt electric current through-current capability of IGCT.Due to IGBT turn-off speed quickly, so when IGBT turns off, due to the di/dt effect of cut-off current, and making the voltage that the inductance generation at IGBT two ends in T former limit is the biggest, thus puncture IGBT.Therefore IGBT triggers in circuit and adds the buffer circuit being made up of electric capacity, resistance and diode D, and a Zener diode in parallel on IGBT emitter and collector.When IGBT turns off, T primary current is gradually reduced under the effect of inductance, and the current potential of IGBT colelctor electrode raises; diode D turns on; the energy of T primary coil inductance storage is discharged by buffer loop, makes the collector junction current potential of IGBT will not rise to breakdown voltage, thus realizes the shutoff protection of IGBT.
Above-described invention example circuit is presently preferred embodiments of the present invention and oneself, but the present invention should not be limited to this embodiment and accompanying drawing disclosure of that.So every without departing from the equivalence completed under spirit disclosed in this invention or amendment, both fall within the scope of protection of the invention.
Claims (4)
1. a RSD based on pulse booster transformer and magnetic switch triggers circuit, it is characterised in that: including charging circuit, discharge main circuit, and RSD triggers circuit and control circuit；
Described electric discharge main circuit series connection RSD triggers circuit, and described charging circuit is parallel to main circuit, RSD triggers circuit two ends；Described control circuit is parallel to charging circuit and RSD triggers circuit two ends；Described electric discharge main circuit includes RSD switch, magnet ring L, main capacitance C0 and the load Z0 sequentially connected；
Described RSD triggers circuit and includes action of low-voltage pulse power supply, pulse transformer T, semiconductor switch K21, semiconductor switch K22, magnetic switch LC, magnetic switch L21, magnetic switch L22 and triggering electric capacity Cc；
Described pulse transformer T, semiconductor switch K21, magnetic switch LC, magnet ring L, main capacitance C0, load Z0, semiconductor switch K22 and triggering electric capacity Cc sequentially connect, constitute preliminary filling current loop；
Described magnetic switch L21 one end be connected to semiconductor switch K21 and magnetic switch LC be connected in series end, the other end is connected to semiconductor switch K22 and triggering electric capacity Cc is connected in series end；
Described magnetic switch L22 one end be connected to load Z0 and semiconductor switch K22 be connected in series end, the other end is connected to trigger electric capacity Cc and pulse transformer T is connected in series end.
A kind of RSD based on pulse booster transformer and magnetic switch triggers circuit, it is characterised in that: described magnetic switch L21, L22 are wound around some circles by wire on the magnetic core of ferrite or annular micro-crystal ferrite thin film and constitute.
A kind of RSD based on pulse booster transformer and magnetic switch triggers circuit, it is characterized in that: the described pulse power uses based on RSD or IGCT or IGBT or the pulse power of power MOSFET or IGCT or GTO, including charging circuit and discharge circuit two parts, described discharge circuit includes discharge capacity C0, magnetic switch L, semiconductor power switch K, output semiconductor switch K21, the trigger current of semiconductor switch K22.
A kind of RSD based on pulse booster transformer and magnetic switch triggers circuit, it is characterised in that: described semiconductor power switch K uses based on IGBT or the semiconductor power switch of power MOSFET or IGCT or GTO.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620058328.3U CN205584154U (en) | 2016-01-21 | 2016-01-21 | RSD trigger circuit based on pulse step up transformer and magnetic switch |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620058328.3U CN205584154U (en) | 2016-01-21 | 2016-01-21 | RSD trigger circuit based on pulse step up transformer and magnetic switch |
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| CN205584154U true CN205584154U (en) | 2016-09-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620058328.3U Withdrawn - After Issue CN205584154U (en) | 2016-01-21 | 2016-01-21 | RSD trigger circuit based on pulse step up transformer and magnetic switch |
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| CN (1) | CN205584154U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105720952A (en) * | 2016-01-21 | 2016-06-29 | 湖北科技学院 | RSD trigger circuit based on pulse boosting transformer and magnetic switch |
| CN108322988A (en) * | 2018-04-12 | 2018-07-24 | 西安交通大学 | A kind of commutation switch device suitable for flexible DC power transmission dc circuit breaker |
-
2016
- 2016-01-21 CN CN201620058328.3U patent/CN205584154U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105720952A (en) * | 2016-01-21 | 2016-06-29 | 湖北科技学院 | RSD trigger circuit based on pulse boosting transformer and magnetic switch |
| CN105720952B (en) * | 2016-01-21 | 2019-04-12 | 湖北科技学院 | RSD trigger circuit based on pulse booster transformer and magnetic switch |
| CN108322988A (en) * | 2018-04-12 | 2018-07-24 | 西安交通大学 | A kind of commutation switch device suitable for flexible DC power transmission dc circuit breaker |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20160914 Effective date of abandoning: 20190412 |