CN105720952B - RSD trigger circuit based on pulse booster transformer and magnetic switch - Google Patents
RSD trigger circuit based on pulse booster transformer and magnetic switch Download PDFInfo
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- CN105720952B CN105720952B CN201610039824.9A CN201610039824A CN105720952B CN 105720952 B CN105720952 B CN 105720952B CN 201610039824 A CN201610039824 A CN 201610039824A CN 105720952 B CN105720952 B CN 105720952B
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- switch
- rsd
- circuit
- magnetic switch
- trigger circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/53—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
- H03K3/57—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback the switching device being a semiconductor device
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- Generation Of Surge Voltage And Current (AREA)
- Magnetic Treatment Devices (AREA)
Abstract
The RSD trigger circuit based on pulse booster transformer and magnetic switch that the invention discloses a kind of, including charging circuit, discharge main circuit, RSD trigger circuit and control circuit.The electric discharge main circuit series connection RSD trigger circuit, the charging circuit are parallel to main circuit, RSD trigger circuit both ends；The control circuit is parallel to charging circuit and RSD trigger circuit both ends；The electric discharge main circuit includes RSD switch, magnet ring L, main capacitance C0 and load Z0；The RSD trigger circuit includes action of low-voltage pulse power supply, pulse transformer T, RSD switch K21, K22, magnetic switch LC, magnetic switch L21, L22 and triggering capacitor Cc.The present invention has the advantage of direct preliminary filling and resonance preliminary filling, increases the parameter matching range of element, high reliablity reduces the total volume of magnetic core, improves the utilization rate of pre-charge.
Description
Technical field
The present invention relates to semiconductor switch technical fields, relate in particular to one kind and are opened based on pulse booster transformer and magnetic
The RSD trigger circuit of pass.
Background technique
In the 1980s, height may be implemented in the reverse switch transistor (RSD) of former Soviet Union academician I.V.Grekhov invention
Di/dt high current microsecond is open-minded.RSD device is a kind of by tens of thousands of a thyristors device being arranged in parallel alternate with transistor cellular
Part, the not no control electrode of triode thyristor, using confined plasma layer triggering mode, inverse injection trigger current, entire
Synchronous uniform conducting is realized on chip area, is eliminated from device principle and is opened localization existing for triode thyristor device
Phenomenon to realize that high di/dt microsecond is open-minded, while passing through very big electric current in a short time.The typical triggering of RSD switch
(preliminary filling) circuit has three kinds of direct preliminary filling, resonance preliminary filling, transformer boosting preliminary filling etc..The triggering mode of single RSD device has directly
Contact hair, two kinds of resonant trigger open mode using direct triggering and open high-efficient, be lost small, and charging circuit configuration is more complex,
It is applied to single pulse to discharge more.The energy loss of resonant trigger is larger, but relatively directly triggering is more easily implemented control, more applicable
In repetitive frequency pulsed electric discharge.The triggering of the RSD switch of more RSD devices in series compositions can be using directly triggering, resonance touching
The modes such as hair and transformer step-up trigger.According to the needs of different practical applications, using different RSD trigger circuits.Invention is special
Sharp " a kind of trigger circuit of reverse switch transistor " (number CN201310109983.8) is using H bridge type trigger circuit for low
Press the triggering of high current RSD device, the charging and discharging of pre-charging capacitor respectively by two groups of diagonal line thyristor switch of H bridge or
IGBT switch control, compared with traditional precharging circuit, which combines the advantages of directly triggering with resonance trigger circuit, improves
The preliminary filling efficiency of RSD.But compared with traditional precharging circuit, which increases three semiconductor preliminary filling switchs, precharge
The control system on road is more complicated, significantly increases the cost of preliminary filling switchs, and is only applicable to the triggering of low pressure RSD switch, drop
The low practicability of improved circuit.
Summary of the invention
To solve the above problems, the present invention provides a kind of based on the reverser of pulse booster transformer and magnetic switch crystalline substance
Body pipe trigger circuit.
Used specific technical solution is as follows:
A kind of RSD trigger circuit based on pulse booster transformer and magnetic switch, including charging circuit, discharge main circuit,
RSD trigger circuit and control circuit.The electric discharge main circuit series connection RSD trigger circuit, the charging circuit are connected to electric discharge master
Circuit, RSD trigger circuit both ends；The control circuit is parallel to charging circuit and RSD trigger circuit both ends；The main electricity of electric discharge
Road includes sequentially concatenated RSD switch, magnetic switch L, main capacitance C0 and load Z0；The RSD trigger circuit includes action of low-voltage pulse
Power supply, pulse transformer T, semiconductor switch K21, semiconductor switch K22, magnetic switch LC, magnetic switch L21, magnetic switch L22 and touching
Cc is held in power generation；The pulse transformer T, it semiconductor switch K21, magnetic switch LC, magnetic switch L, main capacitance C0, load Z0, partly leads
Body switch K22 and triggering capacitor Cc are sequentially connected, are constituted preliminary filling current loop；The one end the magnetic switch L21 is connected to semiconductor
The series connection end of switch K21 and magnetic switch LC, the other end are connected to semiconductor switch K22 and trigger the series connection of capacitor Cc
End；The one end the magnetic switch L22 is connected to the series connection end of load Z0 and semiconductor switch K22, the other end is connected to triggering
Capacitor Cc and the series connection end for pretending to be transformer T.
By using this circuit structure, the course of work is as follows:
The operating voltage of electric discharge main circuit is V0.Action of low-voltage pulse power supply passes through pulse transformer T to high-pressure side output > 2V0
Voltage, form the preliminary filling electric current i1 of minor diameter semiconductor switch K21, K22, i1 is high di/dt short duration current, and trend is
The reversed preliminary filling electric current of T-K21-Lc-L-C0-Z0-K22-Cc-T, i1 K21, K22, after transformer T is saturated, i1 falls to 0,
The voltage of triggering capacitor Cc is applied on K21, K22, K21, K22 forward conduction, RSD reverse-conducting.After T saturation, triggering electricity
Hold Cc to discharge by K21, K22, forms the reversed preliminary filling electric current of RSD, current path is CC-K22-RSD-Lc-K21-T-CC.L
After saturation, main capacitance C0 is discharged by RSD, forms required pulse current i3, current trend C0-L-RSD- on load Z0
Z0-C0.After L21 and L22 is saturated, the discharge path of triggering capacitor Cc is Cc-K21-L21-Cc and Cc-K22-L22-Cc.
Preferably, described magnetic switch L21, L22 are by conducting wire on the magnetic core of ferrite or annular micro-crystal ferrite film
Several circles are wound to constitute.
It is further preferred that any various types repetition rate arteries and veins for meeting circuit requirement can be used in the action of low-voltage pulse power supply
Power supply is rushed, the switch of the pulse power can use RSD, thyristor, IGBT or other semiconductor power switch.When using based on crystalline substance
When the pulse power of brake tube, this pulse power is divided into charging circuit and discharge circuit two parts.Wherein, discharge power supply includes electric discharge
Capacitor C0, magnetic switch L, semiconductor power switch K export the trigger current of K21, K22.K is also possible to IGBT, power MOSFET
Or other three-terminal semiconductor power devices.
Compared with prior art, the present invention has the advantage of direct preliminary filling and resonance preliminary filling, reduces the complicated journey of circuit
Degree, improves reliability, increases the parameter matching range of element, reduce the total volume of magnetic core, improve pre-charge
Utilization rate.
Detailed description of the invention
Fig. 1 is overall structure block diagram of the invention；
Fig. 2 is circuit structure diagram of the invention；
Fig. 3 is the circuit structure diagram of the embodiment of the present invention 1；
Fig. 4 is the circuit structure of action of low-voltage pulse power supply；
Fig. 5 is a kind of circuit structure diagram of double-thyristor synchronous drive circuit.
Specific embodiment
In order to illustrate more clearly of technical solution of the present invention, the course of work of the invention is further described below.
A kind of embodiment 1: RSD trigger circuit based on pulse booster transformer and magnetic switch as shown in Figure 3: including low pressure
The pulse power, pulse booster transformer T, semiconductor switch K21, semiconductor switch K22, magnetic switch L21, magnetic switch L22, branch
Impedance Lc1, branch impedance Lc2, trigger circuit impedance Lc.
The course of work of its circuit is as follows:
Action of low-voltage pulse power supply, to high-pressure side output > 2V0 voltage, forms minor diameter semiconductor switch by pulse transformer T
The high di/dt burst pulse preliminary filling electric current of K21, K22；Current path is T-K21-Lc-L-C0-Z0-K22-Cc-T.
The path of preliminary filling electric current is CC-K22-RSD-Lc-K21-T-Cc.After T saturation, the forward voltage of Cc is applied to
On K21, K22, K21, K22 forward conduction, Cc are discharged by K21, K22, form the reversed preliminary filling electric current of RSD, current path is
Cc-K22-RSD-Lc-K21-T-Cc。
Action of low-voltage pulse power supply as shown in Figure 4 is a kind of pulse power based on RSD switch, including charging circuit, electric discharge
Circuit, RSD trigger circuit.Wherein, C0 is discharge capacity, and Cc is the triggering capacitor of RSD, and Kc is trigger switch, and L, Lc open for magnetic
It closes, R0, R1, R3, Rc are branch resistance, and L0, L2, L3 are shunt inductance, and MRC is the degaussing circuit of magnetic switch.
Its course of work is summarized as follows: two capacitors C0 and CC are charged to same voltage U0 in circuit, after charging,
Preliminary filling switchs KC closure, preliminary filling switchs KC can be thyristor or IGBT, power MOSFET, be used herein as thyristor, capacitor
CC starts to discharge through L2, by the energy transfer of capacitor into inductance LC.When CC tension discharge is to zero, the electric current in inductance reaches
Maximum value, the voltage reversal that RSD is born, LC carry out reversed preliminary filling to RSD.After magnetic switch L saturation, C0 passes through L
It discharges with RSD pulse booster transformer T, trigger current needed for high-pressure side output K21, K22 of T.
A kind of double-thyristor synchronous drive circuit as shown in Figure 5:
TLP521 is light coupling device part, is used for transmission switching signal, isolated drive circuit and low-voltage control circuit；IR2110 is
IGBT driving chip, maximum pressure resistance are 500V, and through-current capability 2A, outputting drive voltage is 10~20V, service time, pass
Disconnected time and delay time are respectively 120ns, 94ns, 10ns.One primary side, two of coiling on the same annular ferrite core
A secondary coil composition triggering transformer T is, it can be achieved that the synchronous of series thyristor is connected.The high level of IR2110 output is input to
IGBT grid, IGBT conducting, DC power supply generate a zooming current impulse, this electric current in pulse transforming coil primary side
Pulse generates two zooming amplitude gate drive currents on the secondary side of T, triggers thyristor by force, enhances the height of thyristor
Di/dt electric current through-current capability.Quickly due to IGBT turn-off speed, so in IGBT shutdown, since the di/dt of cut-off current makees
With, and the voltage for keeping T primary side inductance very big in the generation at the both ends IGBT, to puncture IGBT.Therefore add in IGBT trigger circuit
Entered the buffer circuit being made of capacitor, resistance and diode D, and on IGBT emitter and collector one in parallel it is steady
Press diode.When IGBT is turned off, T primary current is gradually reduced under the action of inductance, and the current potential of IGBT collector increases, two poles
The energy of pipe D conducting, the storage of T primary coil inductance is discharged by buffer loop, rise to the collector junction current potential of IGBT will not
Breakdown voltage, to realize the shutdown protection of IGBT.
Above-described invention example circuit is presently preferred embodiments of the present invention and oneself, but the present invention should not be limited to this
Embodiment and attached drawing disclosure of that.So all do not depart from the lower equivalent or modification completed of spirit disclosed in this invention,
Both fall within the scope of protection of the invention.
Claims (3)
1. a kind of RSD trigger circuit based on pulse booster transformer and magnetic switch, it is characterised in that: including charging circuit, put
Electric main circuit, RSD trigger circuit and control circuit；
The electric discharge main circuit series connection RSD trigger circuit, the charging circuit are connected to electric discharge main circuit, RSD trigger circuit two
End；The control circuit is parallel to charging circuit and RSD trigger circuit both ends；The electric discharge main circuit includes sequentially concatenated
RSD switch, magnetic switch L, main capacitance C0 and load Z0；
The RSD trigger circuit includes action of low-voltage pulse power supply, pulse transformer T, semiconductor switch K21, semiconductor switch K22,
Magnetic switch LC, magnetic switch L21, magnetic switch L22 and triggering capacitor Cc；
Pulse transformer T, RSD switch, magnetic switch LC, magnetic switch L, main capacitance C0, load Z0, semiconductor switch K22 and
Triggering capacitor Cc is sequentially connected, is constituted preliminary filling current loop；
The one end the magnetic switch L21 is connected to the series connection end of semiconductor switch K21 and magnetic switch LC, the other end is connected to half
The series connection end of conductor switch K22 and triggering capacitor Cc；
The one end the magnetic switch L22 is connected to the series connection end of load Z0 and semiconductor switch K22, the other end is connected to triggering
The series connection end of capacitor Cc and pulse transformer T；
Described magnetic switch L21, L22 wind several circle structures on the magnetic core of ferrite or annular micro-crystal ferrite film by conducting wire
At.
2. a kind of RSD trigger circuit based on pulse booster transformer and magnetic switch as described in claim 1, it is characterised in that:
The pulse power uses the pulse power based on RSD or thyristor or IGBT or power MOSFET or IGCT or GTO, including fills
Circuit and discharge circuit two parts, the discharge circuit include discharge capacity C0, magnetic switch L, RSD switch, output semiconductor
The trigger current of switch K21, semiconductor switch K22.
3. a kind of RSD trigger circuit based on pulse booster transformer and magnetic switch as described in claim 1, it is characterised in that:
The RSD switch uses the semiconductor power switch based on IGBT or power MOSFET or IGCT or GTO.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610039824.9A CN105720952B (en) | 2016-01-21 | 2016-01-21 | RSD trigger circuit based on pulse booster transformer and magnetic switch |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610039824.9A CN105720952B (en) | 2016-01-21 | 2016-01-21 | RSD trigger circuit based on pulse booster transformer and magnetic switch |
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| Publication Number | Publication Date |
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| CN105720952A CN105720952A (en) | 2016-06-29 |
| CN105720952B true CN105720952B (en) | 2019-04-12 |
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| CN201610039824.9A Expired - Fee Related CN105720952B (en) | 2016-01-21 | 2016-01-21 | RSD trigger circuit based on pulse booster transformer and magnetic switch |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107122543A (en) * | 2017-04-26 | 2017-09-01 | 湖北科技学院 | A kind of RSD chip currents Density Distribution computational methods |
| CN108650757B (en) * | 2018-03-28 | 2019-08-20 | 深圳可思美科技有限公司 | A kind of depilatory apparatus |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103248338A (en) * | 2013-04-01 | 2013-08-14 | 华中科技大学 | Triggering circuit of reverse switching transistor |
| CN205584154U (en) * | 2016-01-21 | 2016-09-14 | 湖北科技学院 | RSD trigger circuit based on pulse step up transformer and magnetic switch |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US8522181B2 (en) * | 2012-01-24 | 2013-08-27 | Synopsys, Inc. | Capacitance extraction for advanced device technologies |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103248338A (en) * | 2013-04-01 | 2013-08-14 | 华中科技大学 | Triggering circuit of reverse switching transistor |
| CN205584154U (en) * | 2016-01-21 | 2016-09-14 | 湖北科技学院 | RSD trigger circuit based on pulse step up transformer and magnetic switch |
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| CN105720952A (en) | 2016-06-29 |
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