CN103715870B - Voltage adjuster and resonant gate driver thereof - Google Patents
Voltage adjuster and resonant gate driver thereof Download PDFInfo
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- CN103715870B CN103715870B CN201310733241.2A CN201310733241A CN103715870B CN 103715870 B CN103715870 B CN 103715870B CN 201310733241 A CN201310733241 A CN 201310733241A CN 103715870 B CN103715870 B CN 103715870B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/04106—Modifications for accelerating switching without feedback from the output circuit to the control circuit in field-effect transistor switches
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
- H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0083—Converters characterised by their input or output configuration
- H02M1/009—Converters characterised by their input or output configuration having two or more independently controlled outputs
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/12—Modifications for increasing the maximum permissible switched current
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/009—Resonant driver circuits
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
Abstract
The present invention relates to a kind of voltage adjuster and resonant gate driver thereof, wherein, resonant gate driver is used for driving the first power transistor and the second power transistor, including the first control access, the second control access and inductance, wherein: the first end of described first control access is connected with the first end of described second control access；Second end of described first control access is connected via the second end of described inductance with described second control access；3rd end of described first control access is connected with described first power transistor, and the 3rd end of described second control access is connected with described second power transistor.Resonant gate driver according to embodiments of the present invention, it is possible to reduction drive cycle, improves response speed.
Description
Technical field
The present invention relates to semiconductor integrated circuit field, particularly relate to a kind of voltage adjuster and resonant gate driver thereof.
Background technology
It is a kind of technology effectively reducing power consumption that dynamic voltage frequency adjusts (Dynamicvoltageandfrequencyscaling, DVFS).Further, along with the rising of chip design area density, on response speed, sheet, integration and energy efficiency become three key properties of corresponding voltage adjuster.
In the essential structure of voltage adjuster, in the system particularly in switching frequency high on sheet, major part loss comes from the loss of the parasitic capacitance of power transistor and the conduction loss of body diode.At present, have pointed out the structure of the resonant gate driver (Resonantgatedriver) effectively reducing both the above loss, namely mainly utilize two PMOS transistor and attached diode, two nmos pass transistors and attached diode thereof and an inductance, two power transistors are carried out the control of on an off.Specifically, the opening operation of power transistor be may include that the parasitic capacitance charging process to power transistor and inductive discharge process.The shutoff operation of power transistor be may include that the parasitic capacitance discharge process to power transistor and inductive discharge process.
But, as it has been described above, integration is also the key property of voltage adjuster on response speed and sheet.Further, in general, on sheet, integration is more high, would be required to response speed more fast.Therefore, it is also desirable to improve the response speed of the driver of voltage adjuster.
Summary of the invention
In order to solve above-mentioned technical problem, according to one embodiment of the invention, provide a kind of resonant gate driver, for driving the first power transistor and the second power transistor, including the first control access, the second control access and inductance, wherein: the first end of described first control access is connected with the first end of described second control access；Second end of described first control access is connected via the second end of described inductance with described second control access；3rd end of described first control access is connected with described first power transistor, and the 3rd end of described second control access is connected with described second power transistor.
For above-mentioned resonant gate driver, in a kind of possible implementation, described first control access includes the first switch, the 3rd switch and the 5th switch, described second control access includes second switch, the 4th switch and the 6th switch, wherein: the first contact of described first switch is connected with the first contact of described second switch, the second contact of described first switch is connected with the first contact of the second contact of described 5th switch and described 3rd switch；Second contact of described second switch is connected with the first contact of the second contact of described 6th switch and described 4th switch；Second contact of described 3rd switch is connected with described first power transistor；Second contact of described 4th switch is connected with described second power transistor；First contact of described 5th switch and the first contact ground of described 6th switch；One end of described inductance is connected with the second contact of described first switch, and the other end of described inductance is connected with the second contact of described second switch.
For above-mentioned resonant gate driver, in a kind of possible implementation, also including power supply, described power supply is connected with described first contact of the first switch and the first contact of described second switch.
For above-mentioned resonant gate driver, in a kind of possible implementation, described first switch, described second switch, described 3rd switch, described 4th switch, described 5th switch and described 6th switch are semiconductor element.
For above-mentioned resonant gate driver, in a kind of possible implementation, described semiconductor element is field-effect transistor, described first switch, described second switch, described 3rd switch, described 4th switch, first contact of described 5th switch and described 6th switch is the source electrode of described field-effect transistor, described first switch, described second switch, described 3rd switch, described 4th switch, second contact of described 5th switch and described 6th switch is the drain electrode of described field-effect transistor, described first switch, described second switch, described 3rd switch, described 4th switch, the end that controls of described 5th switch and described 6th switch is the grid of described field-effect transistor.
For above-mentioned resonant gate driver, in a kind of possible implementation, described first switch, described second switch, described 3rd switch, described 4th switch are PMOS transistor, and described 5th switch, described 6th switch are nmos pass transistor.
For above-mentioned resonant gate driver, in a kind of possible implementation, also include the first noumenon diode, the second body diode, the 3rd body diode, the 4th body diode, the 5th body diode and the 6th body diode, wherein: the positive pole of described the first noumenon diode is connected with the second contact of described first switch, the negative pole of described the first noumenon diode is connected with the first contact of described first switch；The positive pole of described second body diode is connected with the second contact of described second switch, and the negative pole of described second body diode is connected with the first contact of described second switch；The positive pole of described 3rd body diode is connected with the second contact of described 3rd switch, and the negative pole of described 3rd body diode is connected with the first contact of described 3rd switch；The positive pole of described 4th body diode is connected with the second contact of described 4th switch, and the negative pole of described 4th body diode is connected with the first contact of described 4th switch；The positive pole of described 5th body diode is connected with the first contact of described 5th switch, and the negative pole of described 5th body diode is connected with the second contact of described 5th switch；The positive pole of described 6th body diode is connected with the first contact of described 6th switch, and the negative pole of described 6th body diode is connected with the second contact of described 6th switch.
In order to solve above-mentioned technical problem, according to another embodiment of the present invention, it is provided that a kind of voltage adjuster, including: the first power transistor, the first contact of described first power transistor is connected with one end of power supply；Second power transistor, the first contact of described second power transistor is connected with the other end of described power supply, and the second contact of described second power transistor is connected with the second contact of described first power transistor；And the resonant gate driver of any one structure in the employing embodiment of the present invention, it is connected with the control end controlling end and described second power transistor of described first power transistor, is used for driving described first power transistor and described second power transistor.
For above-mentioned voltage adjuster, in a kind of possible implementation, also include: feedback inductance, feedback capacity, control circuit and modulation circuit, wherein: one end of described feedback inductance is connected with the second contact of described first power transistor, the other end of described feedback inductance is connected with one end of described feedback capacity, and the other end of described feedback capacity is connected with the first contact of described first power transistor；Described control circuit is connected to the two ends of described feedback inductance, it is possible to produce control signal according to the voltage at described feedback inductance two ends；Described modulation circuit is connected with described control circuit, it is possible to produce modulation signal according to described control signal；Described resonant gate driver is connected with described modulation circuit, it is possible to drive described first power transistor and described second power transistor according to described modulation signal.
For above-mentioned voltage adjuster, in a kind of possible implementation, described first power transistor is nmos pass transistor, and described second power transistor is PMOS transistor.
For above-mentioned voltage adjuster, in a kind of possible implementation, the source electrode that first contact is described nmos pass transistor of described first power transistor, the drain electrode that second contact is described nmos pass transistor of described first power transistor, the grid that control end is described nmos pass transistor of described first power transistor, the source electrode that first contact is described PMOS transistor of described second power transistor, the drain electrode that second contact is described PMOS transistor of described second power transistor, the grid that control end is described PMOS transistor of described second power transistor.
The discharge time of twice inductance in prior art is saved by the resonant gate driver of the embodiment of the present invention, thus compared with prior art so that drive cycle reduces about 25%, improves response speed.
According to below with reference to the accompanying drawings to detailed description of illustrative embodiments, further feature and the aspect of the present invention will be clear from.
Accompanying drawing explanation
The accompanying drawing of the part comprising in the description and constituting description together illustrates the exemplary embodiment of the present invention, feature and aspect with description, and is used for explaining principles of the invention.
Fig. 1 illustrates the structural representation of voltage adjuster according to an embodiment of the invention；
Fig. 2 illustrates the structural representation of resonant gate driver according to an embodiment of the invention；
Fig. 3 illustrates the particular circuit configurations figure of resonant gate driver according to an embodiment of the invention；
Fig. 4 a to Fig. 4 c illustrates the step schematic diagram that resonant gate driver drives a power transistor to open and close according to an embodiment of the invention；
Fig. 5 a to Fig. 5 c illustrates that resonant gate driver drives another one power transistor to open and the step schematic diagram closed according to an embodiment of the invention；
Fig. 6 illustrates the contrast schematic diagram of resonant gate driver according to embodiments of the present invention and the resonant gate driver drive cycle of prior art.
Detailed description of the invention
The various exemplary embodiments of the present invention, feature and aspect is described in detail below with reference to accompanying drawing.Accompanying drawing labelling identical in accompanying drawing represents the same or analogous element of function.Although the various aspects of embodiment shown in the drawings, but unless otherwise indicated, it is not necessary to accompanying drawing drawn to scale.
Word " exemplary " special here means " as example, embodiment or illustrative ".Here should not necessarily be construed as preferred or advantageous over other embodiments as any embodiment illustrated by " exemplary ".
It addition, in order to better illustrate the present invention, detailed description of the invention below gives numerous details.It will be appreciated by those skilled in the art that there is no some detail, the equally possible enforcement of the present invention.In some instances, method, means, element and the circuit known for those skilled in the art are not described in detail, in order to highlight the purport of the present invention.
The resonant gate driver of the embodiment of the present invention, for driving the first power transistor and the second power transistor, can by controlling the time ratio that in voltage adjuster as shown in Figure 1, two power transistors turn on and off, input voltage Vi is carried out impulse modulation, so that output voltage Vo is adjustable and is able to maintain that stable, wherein, the first power transistor 110 shown in Fig. 1 is specifically as follows nmos pass transistor, and the second power transistor 120 is specifically as follows PMOS transistor.
Fig. 2 illustrates the structural representation of resonant gate driver according to an embodiment of the invention, as in figure 2 it is shown, this resonant gate driver mainly includes the 210, second control access 220, the first control access and inductance LR, wherein: the first end of the first control access 210 and the first end of the second control access 220 connect；Second end of the first control access 210 is via inductance LRIt is connected with the second end of the second control access 220；3rd end and first power transistor 110 of the first control access 210 connect, and the 3rd end and second power transistor 120 of the second control access 220 connect.
By the control circuit 150 described in Fig. 1 and modulation circuit 140, the first control access 210 of the resonant gate driver of the present invention can be controlled and current intensity that the second control access 220 is passed through, it is thus possible to control turning on and off of the first power transistor 110 and the second power transistor 120, it is achieved that the impulse modulation to the input voltage Vi shown in Fig. 1.
In a kind of possible implementation, the particular circuit configurations figure of the resonant gate driver of one embodiment of the invention can as it is shown on figure 3, the first control access 210 includes the first switch S1, the 3rd switch S3And the 5th switch S5, the second control access 220 includes second switch S2, the 4th switch S4And the 6th switch S6.Wherein: the first switch S1The first contact and second switch S2First contact connect, first switch S1The second contact with the 5th switch S5The second contact and the 3rd switch S3First contact connect；Second switch S2The second contact with the 6th switch S6The second contact and the 4th switch S4First contact connect；3rd switch S3The second contact be connected with the first power transistor 110；4th switch S4The second contact be connected with the second power transistor 120；5th switch S5The first contact and the 6th switch S6The first contact ground；Inductance LROne end with first switch S1Second contact connect, inductance LRThe other end and second switch S2Second contact connect.
In a kind of possible implementation, as it is shown on figure 3, resonant gate driver can also include power supply U according to an embodiment of the invention, power supply U and the first switch S1The first contact and second switch S2First contact connect.
In a kind of possible implementation, the first switch S1, second switch S2, the 3rd switch S3, the 4th switch S4, the 5th switch S5And the 6th switch S6It is semiconductor element.In a kind of possible specific implementation, described semiconductor element is field-effect transistor, the first switch S1, second switch S2, the 3rd switch S3, the 4th switch S4, the 5th switch S5And the 6th switch S6The first contact be the source electrode of described field-effect transistor, the first switch S1, second switch S2, the 3rd switch S3, the 4th switch S4, the 5th switch S5And the 6th switch S6The second contact be the drain electrode of described field-effect transistor, the first switch S1, second switch S2, the 3rd switch S3, the 4th switch S4, the 5th switch S5And the 6th switch S6The end that controls be the grid of described field-effect transistor, be connected with the modulation circuit 140 described in Fig. 1, it is possible to controlled by control circuit 150 by modulation circuit 140.
In a kind of possible implementation, the first switch S1, second switch S2, the 3rd switch S3, the 4th switch S4For PMOS transistor, the 5th switch S5, the 6th switch S6For nmos pass transistor.
In a kind of possible implementation, as it is shown on figure 3, resonant gate driver can also include the first noumenon diode D according to an embodiment of the invention1, the second body diode D2, the 3rd body diode D3, the 4th body diode D4, the 5th body diode D5And the 6th body diode D6, wherein: the first noumenon diode D1Positive pole and first switch S1Second contact connect, the first noumenon diode D1Negative pole and first switch S1First contact connect；Second body diode D2Positive pole and second switch S2Second contact connect, the second body diode D2Negative pole and second switch S2First contact connect；3rd body diode D3Positive pole and the 3rd switch S3Second contact connect, the 3rd body diode D3Negative pole and the 3rd switch S3First contact connect；4th body diode D4Positive pole and the 4th switch S4Second contact connect, the 4th body diode D4Negative pole and the 4th switch S4First contact connect；5th body diode D5Positive pole and the 5th switch S5First contact connect, the 5th body diode D5Negative pole and the 5th switch S5Second contact connect；6th body diode D6Positive pole and the 6th switch S6First contact connect, the 6th body diode D6Negative pole and the 6th switch S6Second contact connect.The existence of body diode can reduce the reverse loss in circuit and can play the purpose of protection switch.
Fig. 4 a to Fig. 4 c illustrates the simplification block diagram that the gate driver that shakes of the embodiment of the present invention is opened and closed the first power transistor 110, and specifically, Fig. 4 a is for opening the first power transistor 110 namely to its parasitic capacitance C1The process being charged, by controlling second switch S2Control the voltage of end so that second switch S2Conducting such that it is able to parasitic capacitance C1Charging, after a period of time, turns on when the grid voltage of the first power transistor 110 exceedes threshold voltage.Next as shown in Figure 4 b, for inductance LRDischarge process, this process is by inductance LREnergy return power supply source U, it is possible to realize the saving of energy.Fig. 4 c is process i.e. its parasitic capacitance C closing the first power transistor 1101The process of electric discharge, by controlling the 6th switch S6Control the voltage of end so that the 6th switch S6Conducting such that it is able to make parasitic capacitance C1By inductance LRDischarge.Open and close the second power transistor 120 namely to its parasitic capacitance C2The process of charging and discharging, simplifies block diagram such as shown in Fig. 5 a to 5c, and concrete steps are referred to opening and closing step of above-mentioned first power transistor 110.
It should be noted that the first switch S1, second switch S2, the 3rd switch S3, the 4th switch S4, the 5th switch S5And the 6th switch S6Turn-on and turn-off can pass through modulation circuit 140 logic control, when the control terminal voltage of above-mentioned switch is controlled as logic high, this switch conduction, when the control terminal voltage of above-mentioned switch is controlled as logic low, this switch OFF.In actual applications, it is possible to as required, in modulation circuit 140, the control end of pre-set each switch above-mentioned needs to be controlled as high level or low level moment.It addition, those skilled in the art will be understood that each switch above-mentioned can also be the switching tube with similar functions.
In a drive cycle to the voltage adjuster shown in Fig. 1, the resonant gate driver of the present embodiment needs to perform twice opening operation to power transistor and shutoff operation, namely: the first power transistor 110 is opened, first power transistor 110 is closed, second power transistor 120 is opened, and the second power transistor 120 is closed.
According to above-mentioned analysis, the driving of single power transistor can be summarized as three below step by the resonant gate driver of the present embodiment, and in a drive cycle, following step is performed twice:
Step 01, parasitic capacitance charging process；
Step 02, inductive discharge, return energy；
Step 03, parasitic capacitance discharge, inductive energy storage.
And single power transistor drives can be summarized as following four step by the structure of the existing resonant gate driver as described in background technology, in a drive cycle, following step is performed twice:
Step 11, parasitic capacitance charging process；
Step 12, inductive discharge, return energy；
Step 13, parasitic capacitance discharge, inductive energy storage；
Step 14, inductive discharge, return energy.
If the step units with the 50ns drive cycle being resonant gate driver, by the emulation experiment to power transistor drives to the resonant gate driver of prior art and the resonant gate driver of the embodiment of the present invention, it is possible to the drive cycle obtaining two kinds of structures compares schematic diagram.As shown in Figure 6, it can be seen that the discharge time of twice inductance in prior art is saved by the resonant gate driver of the embodiment of the present invention, thus compared with prior art, it is possible to make drive cycle reduce about 25%, improve response speed.It addition, the resonant gate driver of the embodiment of the present invention decreases the step to power transistor drives compared to existing technology such that it is able to reduce the complexity being responsible for controlling the logical block of resonant gate driver switch.
Although it should be noted that exemplarily describe resonant gate driver that the present invention proposes in the drive circuit of voltage adjuster as above to apply to, but those skilled in the art are it should be understood that the application scenarios of the present invention should be not limited to this.The New Resonance gate driver that the present invention proposes can also apply in other similar circuit, for instance the drive circuit etc. to device for power switching.Additionally, although above-described embodiment is for Fig. 4 a to 4c and Fig. 5 a to 5c, specifically describe a kind of possible implementation of the resonant gate driver of the present invention, but those skilled in the art it should be understood that, the concrete current direction of the resonant gate driver of the present invention should be not limited to this, the logic level values controlling end of each switch, the structure of the resonant gate driver described in all employing claim can be set completely according to application scenarios flexibly, broadly fall into the scope of the present invention.
The structure chart of voltage adjuster can be as shown in Figure 1 according to an embodiment of the invention.Voltage adjuster may include that the first power transistor the 110, second power transistor 120 and resonant gate driver 130.Wherein, the first contact of the first power transistor 110 is connected with one end of power supply E；First contact of the second power transistor 120 is connected with the other end of power supply E, and the second contact of the second power transistor 120 is connected with the second contact of the first power transistor 110；Resonant gate driver 130 adopts the circuit structure according to the above embodiment of the present invention, it is connected with the control end controlling end and the second power transistor 120 of the first power transistor 110, it is possible to drive the opening and closing of the first power transistor 110 and the second power transistor 120.
In a kind of possible implementation, described voltage adjuster also includes: feedback inductance L, feedback capacity C, control circuit 150 and modulation circuit 140, wherein: one end of feedback inductance L is connected with the second contact of the first power transistor 110, the other end of feedback inductance L is connected with one end of feedback capacity C, and the other end of feedback capacity C and the first contact of the first power transistor 110 connect；Control circuit 150 is connected to the two ends of feedback inductance L, it is possible to produce control signal according to the voltage at feedback inductance L two ends；Modulation circuit 140 is connected with control circuit 150, it is possible to produce modulation signal according to described control signal；Resonant gate driver 130 is connected with modulation circuit 140, it is possible to drive the first power transistor 110 and the second power transistor 120 according to described modulation signal.
In a kind of possible implementation, the first power transistor 110 is nmos pass transistor, and the second power transistor 120 is PMOS transistor.
In a kind of possible implementation, the source electrode that first contact is described nmos pass transistor of the first power transistor 110, the drain electrode that second contact is described nmos pass transistor of the first power transistor 110, the grid that control end is described nmos pass transistor of the first power transistor 110；The source electrode that first contact is described PMOS transistor of the second power transistor 120, the drain electrode that the second contact is described PMOS transistor of the second power transistor 120, the grid that control end is described PMOS transistor of the second power transistor 120.
The resonant gate driver 130 control to the first power transistor 110 with to the second power transistor 120 is specifically referred to described in above-described embodiment and Fig. 4 a to Fig. 4 c and Fig. 5 a to 5c, by controlling turning on and off of the first power transistor 110 and the second power transistor 120, it is achieved that the impulse modulation to the input voltage Vi shown in Fig. 1.
In addition, it is necessary to illustrate, when adopting the resonant gate driver of structure shown in Fig. 3, due to the first switch S in resonant gate driver1, second switch S2, the 3rd switch S3, the 4th switch S4, the 5th switch S5And the 6th switch S6Turn-on and turn-off can pass through modulation circuit 140 logic control, say, that when the control terminal voltage of above-mentioned switch is controlled as logic high, this switch conduction, when the control terminal voltage of above-mentioned switch is controlled as logic low, this switch OFF.In actual applications, it is possible to as required, in modulation circuit 140, the control end of pre-set each switch above-mentioned needs to be controlled as high level or low level moment.
The voltage adjuster of the present embodiment have employed the resonant gate driver described in the above embodiment of the present invention, it is possible to increase response speed, is more beneficial on the sheet of voltage adjuster integrated.It addition, the voltage adjuster of the embodiment of the present invention can reduce the complexity being responsible for controlling the logical block of switch of resonant gate driver, namely modulation circuit.
The above; being only the specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, any those familiar with the art is in the technical scope that the invention discloses; change can be readily occurred in or replace, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with described scope of the claims.
Claims (10)
1. a resonant gate driver, is used for driving the first power transistor and the second power transistor, it is characterised in that include the first control access, the second control access and inductance, wherein:
First end of described first control access is connected with the first end of described second control access；
Second end of described first control access is connected via the second end of described inductance with described second control access；
3rd end of described first control access is connected with described first power transistor, and the 3rd end of described second control access is connected with described second power transistor,
Described first control access includes the first switch, the 3rd switch and the 5th switch, and described second control access includes second switch, the 4th switch and the 6th switch, wherein:
First contact of described first switch is connected with the first contact of described second switch, and the second contact of described first switch is connected with the first contact of the second contact of described 5th switch and described 3rd switch；
Second contact of described second switch is connected with the first contact of the second contact of described 6th switch and described 4th switch；
Second contact of described 3rd switch is connected with described first power transistor；
Second contact of described 4th switch is connected with described second power transistor；
First contact of described 5th switch and the first contact ground of described 6th switch；
One end of described inductance is connected with the second contact of described first switch, and the other end of described inductance is connected with the second contact of described second switch.
2. resonant gate driver according to claim 1, it is characterised in that also including power supply, described power supply is connected with described first contact of the first switch and the first contact of described second switch.
3. resonant gate driver according to claim 1 and 2, it is characterised in that described first switch, described second switch, described 3rd switch, described 4th switch, described 5th switch and described 6th switch are semiconductor element.
4. resonant gate driver according to claim 3, it is characterized in that, described semiconductor element is field-effect transistor, described first switch, described second switch, described 3rd switch, described 4th switch, first contact of described 5th switch and described 6th switch is the source electrode of described field-effect transistor, described first switch, described second switch, described 3rd switch, described 4th switch, second contact of described 5th switch and described 6th switch is the drain electrode of described field-effect transistor, described first switch, described second switch, described 3rd switch, described 4th switch, the end that controls of described 5th switch and described 6th switch is the grid of described field-effect transistor.
5. resonant gate driver according to claim 4, it is characterised in that described first switch, described second switch, described 3rd switch, described 4th switch are PMOS transistor, described 5th switch, described 6th switch are nmos pass transistor.
6. resonant gate driver according to claim 5, it is characterised in that also include the first noumenon diode, the second body diode, the 3rd body diode, the 4th body diode, the 5th body diode and the 6th body diode, wherein:
The positive pole of described the first noumenon diode is connected with the second contact of described first switch, and the negative pole of described the first noumenon diode is connected with the first contact of described first switch；
The positive pole of described second body diode is connected with the second contact of described second switch, and the negative pole of described second body diode is connected with the first contact of described second switch；
The positive pole of described 3rd body diode is connected with the second contact of described 3rd switch, and the negative pole of described 3rd body diode is connected with the first contact of described 3rd switch；
The positive pole of described 4th body diode is connected with the second contact of described 4th switch, and the negative pole of described 4th body diode is connected with the first contact of described 4th switch；
The positive pole of described 5th body diode is connected with the first contact of described 5th switch, and the negative pole of described 5th body diode is connected with the second contact of described 5th switch；
The positive pole of described 6th body diode is connected with the first contact of described 6th switch, and the negative pole of described 6th body diode is connected with the second contact of described 6th switch.
7. a voltage adjuster, it is characterised in that including:
First power transistor, the first contact of described first power transistor is connected with one end of power supply；
Second power transistor, the first contact of described second power transistor is connected with the other end of described power supply, and the second contact of described second power transistor is connected with the second contact of described first power transistor；And
Resonant gate driver as according to any one of claim 1 to 6, is connected with the control end controlling end and described second power transistor of described first power transistor, is used for driving described first power transistor and described second power transistor.
8. voltage adjuster according to claim 7, it is characterised in that also include: feedback inductance, feedback capacity, control circuit and modulation circuit, wherein:
One end of described feedback inductance is connected with the second contact of described first power transistor, and the other end of described feedback inductance is connected with one end of described feedback capacity, and the other end of described feedback capacity is connected with the first contact of described first power transistor；
Described control circuit is connected to the two ends of described feedback inductance, it is possible to produce control signal according to the voltage at described feedback inductance two ends；
Described modulation circuit is connected with described control circuit, it is possible to produce modulation signal according to described control signal；
Described resonant gate driver is connected with described modulation circuit, it is possible to drive described first power transistor and described second power transistor according to described modulation signal.
9. the voltage adjuster according to claim 7 or 8, it is characterised in that described first power transistor is nmos pass transistor, described second power transistor is PMOS transistor.
10. voltage adjuster according to claim 9, it is characterised in that
The source electrode that first contact is described nmos pass transistor of described first power transistor, the drain electrode that the second contact is described nmos pass transistor of described first power transistor, the grid that control end is described nmos pass transistor of described first power transistor,
The source electrode that first contact is described PMOS transistor of described second power transistor, the drain electrode that the second contact is described PMOS transistor of described second power transistor, the grid that control end is described PMOS transistor of described second power transistor.
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| CN201310733241.2A CN103715870B (en) | 2013-12-26 | 2013-12-26 | Voltage adjuster and resonant gate driver thereof |
| US14/533,748 US9584109B2 (en) | 2013-12-26 | 2014-11-05 | Voltage regulator and resonant gate driver thereof |
| EP14192749.1A EP2890009B1 (en) | 2013-12-26 | 2014-11-12 | Voltage regulator and resonant gate driver thereof |
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| CN201310733241.2A CN103715870B (en) | 2013-12-26 | 2013-12-26 | Voltage adjuster and resonant gate driver thereof |
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| CN103715870B true CN103715870B (en) | 2016-06-29 |
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| CN104124870B (en) * | 2014-08-08 | 2017-09-05 | 华为技术有限公司 | Switching Power Supply |
| CN105245091B (en) * | 2015-10-27 | 2018-04-06 | 东南大学 | The gate driving circuit of power MOS pipe in a kind of power inverter |
| US10211827B2 (en) * | 2017-01-31 | 2019-02-19 | Ford Global Technologies, Llc | Resonant gate driver |
| US10500959B2 (en) | 2017-03-29 | 2019-12-10 | Ford Global Technologies, Llc | Single supply hybrid drive resonant gate driver |
| US11264985B1 (en) * | 2021-03-04 | 2022-03-01 | Aes Global Holdings Pte Ltd. | Bipolar pulsed-voltage gate driver |
| CN115133752A (en) * | 2021-03-25 | 2022-09-30 | 台达电子企业管理（上海）有限公司 | Drive device and control method thereof |
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| CN1849748A (en) * | 2003-09-08 | 2006-10-18 | 皇家飞利浦电子股份有限公司 | High frequency control of a semiconductor switch |
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| US5196995A (en) * | 1989-12-01 | 1993-03-23 | Zdzislaw Gulczynski | 3-terminal bidirectional switching power supply with AC or DC input and AC or DC output |
| WO2003041249A1 (en) * | 2001-11-05 | 2003-05-15 | Shakti Systems, Inc. | Dc-dc converter with resonant gate drive |
| US7110265B2 (en) | 2002-12-09 | 2006-09-19 | Queen's University At Kingston | Non-isolated DC-DC converters with direct primary to load current |
| US7598792B2 (en) | 2005-01-31 | 2009-10-06 | Queen's University At Kingston | Resonant gate drive circuits |
| US7612602B2 (en) * | 2005-01-31 | 2009-11-03 | Queen's University At Kingston | Resonant gate drive circuits |
| JP4496988B2 (en) * | 2005-02-21 | 2010-07-07 | 株式会社デンソー | Gate drive circuit |
| US7667371B2 (en) * | 2007-09-17 | 2010-02-23 | Motorola, Inc. | Electronic device and circuit for providing tactile feedback |
| WO2012113015A1 (en) * | 2011-02-22 | 2012-08-30 | Redarc Technologies Pty Ltd | Synchronous dc-dc conversion |
| US8847631B2 (en) | 2011-12-23 | 2014-09-30 | General Electric Company | High speed low loss gate drive circuit |
| EP2624426A1 (en) * | 2012-02-03 | 2013-08-07 | Dialog Semiconductor GmbH | Protection of an N-channel transistor |
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| CN1849748A (en) * | 2003-09-08 | 2006-10-18 | 皇家飞利浦电子股份有限公司 | High frequency control of a semiconductor switch |
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| Publication number | Publication date |
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| US20150188531A1 (en) | 2015-07-02 |
| US9584109B2 (en) | 2017-02-28 |
| EP2890009A1 (en) | 2015-07-01 |
| CN103715870A (en) | 2014-04-09 |
| EP2890009B1 (en) | 2017-06-21 |
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