CN105245091B - The gate driving circuit of power MOS pipe in a kind of power inverter - Google Patents
The gate driving circuit of power MOS pipe in a kind of power inverter Download PDFInfo
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- CN105245091B CN105245091B CN201510703629.7A CN201510703629A CN105245091B CN 105245091 B CN105245091 B CN 105245091B CN 201510703629 A CN201510703629 A CN 201510703629A CN 105245091 B CN105245091 B CN 105245091B
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Abstract
The gate driving circuit of power MOS pipe in a kind of power inverter, including direct voltage source V, metal-oxide-semiconductor Q1, storage capacitor C, energy storage inductor L, metal-oxide-semiconductor Q2With metal-oxide-semiconductor Q3, direct voltage source V positive pole connection metal-oxide-semiconductor Q1Drain electrode, metal-oxide-semiconductor Q1Grid connect external control signal I, metal-oxide-semiconductor Q1Source electrode connection storage capacitor C one end and energy storage inductor L one end, storage capacitor C other end ground connection, energy storage inductor L other end connection metal-oxide-semiconductor Q2Drain electrode and metal-oxide-semiconductor Q3Source electrode, metal-oxide-semiconductor Q2Grid connect external control signal II, metal-oxide-semiconductor Q2Source electrode connection direct voltage source V negative pole and ground connection, metal-oxide-semiconductor Q3Grid connect external control signal III, metal-oxide-semiconductor Q3Drain electrode connection power inverter in power MOS pipe Q4Grid；External control signal I, external control signal II and external control signal III are provided by the adjustable waveform generator of dutycycle.
Description
Technical field
The present invention relates to a kind of gate driving circuit of power MOS pipe in switch converters, more particularly to power inverter.
Background technology
In recent years, the work(of power inverter is improved in power inverter in order to further reduce the volume of passive device
Rate density, the converter switches frequency more and more higher of people's design.Generally, with the increase of switching frequency, converter
In the switching loss of power MOS pipe and the loss of gate driving circuit can all increase therewith, cause the efficiency of whole system
Reduce.So, in frequency applications occasion, in the case of underloading, because switching loss and gate driving circuit are lost
Increase, the reliability of system can not ensure.If these losses can not be effectively reduced, it is possible to cause related device
Failure, the reliability of system reduce, and result even in whole system cisco unity malfunction.
Power MOS pipe especially in converter, it is ensured that there is energy to be delivered to output end, power from input in circuit
The reliability of metal-oxide-semiconductor must be guaranteed.And the loss main source for metal-oxide-semiconductor includes two：Switching loss and conducting are damaged
Consumption.The conduction loss of metal-oxide-semiconductor is determined by the conducting resistance and the electric current that flows through of metal-oxide-semiconductor itself, due to the electric conduction of metal-oxide-semiconductor
Resistance is determined by the performance of metal-oxide-semiconductor itself, and is essentially in several ohm of ranks of zero point or so.Therefore normal condition
Under, the conduction loss of metal-oxide-semiconductor is acceptable.But the switching loss of metal-oxide-semiconductor depends greatly on metal-oxide-semiconductor
Gate driving circuit.If the gate driving circuit design of metal-oxide-semiconductor is unreasonable, then the switch damage of the metal-oxide-semiconductor thereby resulted in
Consumption is very likely to the failure for causing metal-oxide-semiconductor.
At present, it is most of that string is passed through using voltage source for the design of traditional power MOS transistor grid drive circuit
A raster data model resistance is connect, discharge and recharge then is carried out to the grid of power MOS pipe.Although the design of this drive circuit
Simply and readily realize, but driving current has also flowed through raster data model electricity while the grid to metal-oxide-semiconductor carries out discharge and recharge
Resistance, thus can inevitably increase the loss of gate driving circuit.Moreover, the design of conventional MOS tube grid drive circuit,
When metal-oxide-semiconductor needs shut-off, drive circuit is that the electric charge of metal-oxide-semiconductor gate electrodes is released by ground wire, hence it is evident that adds grid
The loss of pole drive circuit, it is unfavorable for the raising of power inverter whole efficiency.
In addition, loss of the someone for reducing gate driving circuit also propose according to the different of load output situation and
The switching frequency of power MOS pipe is adjusted, although so from a cycle on the whole, helping to reduce the loss of drive circuit,
But not only circuit realiration is complex for this scheme, and also results in output voltage and have larger ripple and more serious
EMI.Therefore, design is a kind of simple in construction, has efficient metal-oxide-semiconductor gate driving circuit again, is the big problem of to be solved one.
The content of the invention
Present invention aims at the gate driving circuit for providing power MOS pipe in a kind of power inverter, to reduce metal-oxide-semiconductor
Loss, especially reduce the switching loss of metal-oxide-semiconductor, further improve the efficiency of converter, increase the reliability of system.
The present invention to achieve the above object, adopts the following technical scheme that：The grid of power MOS pipe in a kind of power inverter
Drive circuit, it is characterised in that：Including direct voltage source V, metal-oxide-semiconductor Q1, storage capacitor C, energy storage inductor L, metal-oxide-semiconductor Q2And metal-oxide-semiconductor
Q3, direct voltage source V positive pole connection metal-oxide-semiconductor Q1Drain electrode, metal-oxide-semiconductor Q1Grid connect external control signal I, metal-oxide-semiconductor Q1's
Source electrode connection storage capacitor C one end and energy storage inductor L one end, storage capacitor C other end ground connection, energy storage inductor L's is another
One end connection metal-oxide-semiconductor Q2Drain electrode and metal-oxide-semiconductor Q3Source electrode, metal-oxide-semiconductor Q2Grid connect external control signal II, metal-oxide-semiconductor Q2's
Source electrode connection direct voltage source V negative pole and ground connection, metal-oxide-semiconductor Q3Grid connect external control signal III, metal-oxide-semiconductor Q3Drain electrode
As the output of drive circuit, power MOS pipe Q in power inverter is connected4Grid；External control signal I, external control letter
Number II and external control signal III is provided by the adjustable waveform generator of dutycycle；
Above-mentioned drive circuit power MOS pipe Q in Switching Power Supply4A switch periods in, metal-oxide-semiconductor Q1Only switch once,
In power MOS pipe Q4In opening process, the energy in storage capacitor C passes through by storage capacitor C, energy storage inductor L, metal-oxide-semiconductor Q2With
Metal-oxide-semiconductor Q3The equivalent Boost circuit of composition is delivered to power MOS pipe Q4Grid, in power MOS pipe Q4In turn off process, power
Metal-oxide-semiconductor Q4Energy on grid passes through by metal-oxide-semiconductor Q3, metal-oxide-semiconductor Q2, energy storage inductor L and storage capacitor C composition equivalent Buck electricity
Road is returned in storage capacitor C.
The direct voltage source V is output 0.7V constant pressure source, and it functions as a charge pump.
The metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2With metal-oxide-semiconductor Q3It is N-channel type MOSFET, model uses IRF120, metal-oxide-semiconductor Q4For
N-channel type MOSFET, it is 10 μ F that model, which uses SPW20N60S5, storage capacitor C, and energy storage inductor L is 1 μ H.
The invention has the advantages that：
1st, power MOS pipe Q is made in drive circuit4During shut-off, conventional drive scheme is often by metal-oxide-semiconductor Q4Gate charge passes through
The earth is released completely, or by grid source bleeder resistance and metal-oxide-semiconductor Q4Grid source dead resistance consume, which not only adds
The loss of drive circuit, and also reduce power MOS pipe Q4Reliability.Drive scheme of the present invention, it is by work(
Rate metal-oxide-semiconductor Q4The electric charge of gate electrodes is in metal-oxide-semiconductor Q4During shut-off, feed back to again in the storage capacitor of drive circuit.For driving
Metal-oxide-semiconductor Q4Next cycle it is open-minded, greatly reduce the loss of drive circuit.
2nd, power MOS pipe Q is made in drive circuit4When opening, compared with traditional drive scheme, the present invention is due to eliminating
Raster data model resistance, thus in the absence of the loss above raster data model resistance, the loss of drive circuit is reduced, improve and be
The efficiency of system.
3rd, drive scheme proposed by the present invention, when driving current, which flows through inductance, needs afterflow, using the side of synchronous rectification
Method instead of " fly-wheel diode " of traditional sense, further reduce the loss of drive circuit.
4th, drive scheme proposed by the present invention, it is by basic Buck, Boost circuit topology deformation, increase only
The two passive device energy storage inductor L and storage capacitor C for playing energy storage, structure and control method are simple, easily realize.
Brief description of the drawings
Fig. 1 is circuit theory diagrams of the present invention；
Fig. 2 is key node schematic diagram in Fig. 1；
Fig. 3 is Fig. 1 embodiment schematic diagrams；
Fig. 4 is the oscillogram of associated control signal and key node in Fig. 2；
Fig. 5 is that efficiency comparative of the present invention from tradition concatenation raster data model resistor proposal under different switching frequencies schemes；
Embodiment
The technology of invention is described in detail below in conjunction with the accompanying drawings.
It is concrete principle figure proposed by the present invention such as Fig. 1.Direct voltage source V is a perseverance that can export 0.7V sizes
Potential source, it functions as a charge pump.
Metal-oxide-semiconductor Q1For N-channel type MOSFET, the external control signal I of grid, control metal-oxide-semiconductor Q1Open suitable at the time of and
Shut-off.Control signal I is provided by an adjustable waveform generator of dutycycle.
Storage capacitor C is in powered metal-oxide-semiconductor Q4Before opening, the energy in direct voltage source V is stored.
Energy storage inductor L is in powered metal-oxide-semiconductor Q4Energy of the storage in storage capacitor C, is Boost liters before opening
The unlatching of volt circuit is prepared.
Metal-oxide-semiconductor Q2For N-channel type MOSFET, the external control signal II of grid, control metal-oxide-semiconductor Q2It is open-minded suitable at the time of
And shut-off.Control signal II source is similar with control signal I, and is carried by an adjustable waveform generator of dutycycle
For.In power MOS pipe Q4Opening process, metal-oxide-semiconductor Q2The switching tube functioned as in basic Boost circuit, pass through metal-oxide-semiconductor
Q2Charge to energy storage inductor L, by the energy transfer in storage capacitor C into energy storage inductor, done for the unlatching of Boost circuit
Prepare.
Metal-oxide-semiconductor Q3For N-channel type MOSFET, the external control signal III of grid, control metal-oxide-semiconductor Q3It is open-minded suitable at the time of
And shut-off.Control signal III is equally provided by an adjustable waveform generator of dutycycle.In power MOS pipe Q4Opened
Journey, metal-oxide-semiconductor Q3" fly-wheel diode " that functions as in basic Boost circuit, pass through metal-oxide-semiconductor Q3Continue for energy storage inductor L
Stream, realize the function of Boost.In power MOS pipe Q4Turn off process, metal-oxide-semiconductor Q2With metal-oxide-semiconductor Q3Effect just exchange,
In turn off process, metal-oxide-semiconductor Q3The switching tube functioned as in basic Buck circuits, metal-oxide-semiconductor Q2Function as it is basic
" fly-wheel diode " in Buck circuits, it is energy storage inductor L afterflows, so as to realize the function of Buck converters.
Power MOS pipe Q4For N-channel type power MOSFET, powered MOSFET is needed in representation switch converter.
It is that Fig. 1 shows key node A, B, C in schematic diagram, the signal waveform at this 3 point is with regard to that can reflect the electricity such as Fig. 2
Road whether being capable of normal work.
It is embodiment circuit theory diagrams such as Fig. 3.The present invention component parameter and device model in specific implementation process
It is as shown in Figure 3.
Such as Fig. 4, timing waveform when being drive circuit normal work proposed by the present invention, finally in the pass shown in Fig. 2
At key node C, the switching signal of low and high level checker is obtained, reaches driving power metal-oxide-semiconductor Q4Purpose.
It is using tradition concatenation raster data model resistor proposal and using drive scheme proposed by the present invention, in difference such as Fig. 5
Switching frequency under, the comparison diagram of drive circuit efficiency.From fig. 5, it is seen that with the raising of switching frequency, drive circuit
Efficiency all declined.But drive scheme proposed by the present invention is used, under higher switching frequency, efficiency is above passing
The efficiency of the grid concatenation driving resistor proposal of system.
Direct voltage source V concatenation metal-oxide-semiconductors Q1Drain electrode, metal-oxide-semiconductor Q1Grid external control signal I, metal-oxide-semiconductor Q1Source electrode
One end with storage capacitor C, energy storage inductor L is connected respectively, storage capacitor C other end ground connection, the energy storage inductor L other end
Concatenate metal-oxide-semiconductor Q3Source electrode, metal-oxide-semiconductor Q3Grid external control signal III, metal-oxide-semiconductor Q2Drain electrode and converter in power MOS
Pipe Q4Grid be connected, power MOS pipe Q4Source ground, energy storage inductor and metal-oxide-semiconductor Q2Common port and metal-oxide-semiconductor Q2Drain electrode
Connect, metal-oxide-semiconductor Q2Grid external control signal II, metal-oxide-semiconductor Q2Source ground.
The present invention is in metal-oxide-semiconductor Q4When opening, circuit can turn into basic Boost circuit with equivalent, now metal-oxide-semiconductor Q2Quite
" fly-wheel diode " in Boost circuit；In metal-oxide-semiconductor Q4During shut-off, circuit can with the equivalent circuit as basic Buck,
Now metal-oxide-semiconductor Q2Equivalent to " fly-wheel diode " in Buck circuits.Moreover, in metal-oxide-semiconductor Q4During shut-off, metal-oxide-semiconductor Q4Grid electricity
Lotus, do not fallen by external grid source bleeder resistance or metal-oxide-semiconductor endophyte grid source resistance consumption, but by equivalent
Buck circuits feed back to energy storage inductor, finally return back in storage capacitor, reduce the Q of metal-oxide-semiconductor4Switching loss, while also drop
The gate driving circuit loss of low metal-oxide-semiconductor, it is favorably improved the efficiency and reliability of system.
The course of work of the present invention is as follows：
As shown in figure 4, system electrification moment, control signal I is provided, and control signal I is changed into high level, metal-oxide-semiconductor Q1It is real
Now open-minded, direct voltage source starts to charge to storage capacitor.By 0~t1Time, control signal I are changed into low level, by metal-oxide-semiconductor
Q1Shut-off.Now energy is obtained in storage capacitor.
By t1~t2After time, control signal II is provided, and control signal II is changed into high level, metal-oxide-semiconductor Q2Realization is opened
It is logical, electric current is begun with by energy storage inductor, and energy storage inductor starts energy storage, and energy starts to be delivered to energy storage inductor in storage capacitor
In.
By t2~t3After time, control signal II is changed into low level, metal-oxide-semiconductor Q2Shut-off.Because inductive current can not dash forward
Become, will be in metal-oxide-semiconductor Q2Drain electrode produce one rising voltage.Then t is passed through3~t4Dead time, in t4Moment, control
Signal III is provided, and control signal III is changed into high level, metal-oxide-semiconductor Q3Realize open-minded.Now circuit equivalent turn into one it is basic
Boost circuit, the energy in inductance start to give metal-oxide-semiconductor Q4Gate-source capacitance charging, metal-oxide-semiconductor Q4Begin to turn on, by t4~t5When
Between, control signal III is changed into low level, metal-oxide-semiconductor Q2Turn off, afterwards metal-oxide-semiconductor Q4Gate source voltage it is stable in 14.2V, metal-oxide-semiconductor
Q4Realize open-minded.Now, metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2, metal-oxide-semiconductor Q3Off state is in, and due to metal-oxide-semiconductor Q3Access in circuit
Mode, be that drain electrode connects powered power MOS pipe Q4Grid, avoid in metal-oxide-semiconductor Q3Turn off device, power MOS pipe Q4
Electric charge above gate-source capacitance passes through metal-oxide-semiconductor Q3Body diode released, so ensure that power MOS pipe Q4In t5
~t6Period reliably turns on.
In t6At the moment, control signal III is provided, control signal III is become high level, metal-oxide-semiconductor Q3Realize open-minded.Now
Due to metal-oxide-semiconductor Q2State is off, then power MOS pipe Q4Gate-source capacitance above electric charge just pass through energy storage inductor again feedback
Into storage capacitor, rising somewhat occurs in this period in the voltage on electric capacity, now circuit equivalent turn into one it is basic
Buck circuits.By t6~t7Time, control signal III are changed into low level, by metal-oxide-semiconductor Q3Shut-off.Now, metal-oxide-semiconductor Q4Grid source
Voltage has been stablized in 0.7V or so, makes metal-oxide-semiconductor Q4Reliably end.
By t7~t3Dead time, in t8Moment, control signal II was provided so that control signal II becomes high level, MOS
Pipe Q2Realize open-minded, function as " fly-wheel diode " in basic Buck circuits, so as to be energy storage inductor afterflow.By t8
~t9Time, control signal II become low level, metal-oxide-semiconductor Q2Shut-off, until T moment, the working condition knot of circuit a cycle
Beam.Next according to above-mentioned sequential, work to circuit period property.Height will be produced at the C points shown in Fig. 2 alternately to open
OFF signal so that power MOS pipe Q4Periodically turn on and off, realize power MOS pipe Q in driving switch converter4Mesh
's.And it can also realize in power MOS pipe Q4When shut-off, by the energy feedback in its gate-source capacitance to storage capacitor
In, reduce metal-oxide-semiconductor Q4Switching loss, further improve the efficiency of whole switch converters.
Claims (3)
- A kind of 1. gate driving circuit of power MOS pipe in power inverter, it is characterised in that：Including direct voltage source V, MOS Pipe Q1, storage capacitor C, energy storage inductor L, metal-oxide-semiconductor Q2With metal-oxide-semiconductor Q3, direct voltage source V positive pole connection metal-oxide-semiconductor Q1Drain electrode, Metal-oxide-semiconductor Q1Grid connect external control signal I, metal-oxide-semiconductor Q1Source electrode connection storage capacitor C one end and energy storage inductor L one End, storage capacitor C other end ground connection, energy storage inductor L other end connection metal-oxide-semiconductor Q2Drain electrode and metal-oxide-semiconductor Q3Source electrode, MOS Pipe Q2Grid connect external control signal II, metal-oxide-semiconductor Q2Source electrode connection direct voltage source V negative pole and ground connection, metal-oxide-semiconductor Q3 Grid connect external control signal III, metal-oxide-semiconductor Q3Output of the drain electrode as drive circuit, work(in connection power inverter Rate metal-oxide-semiconductor Q4Grid；External control signal I, external control signal II and external control signal III are adjustable by dutycycle Waveform generator provided；Above-mentioned drive circuit power MOS pipe Q in Switching Power Supply4A switch periods in, metal-oxide-semiconductor Q1Only switch once, in work( Rate metal-oxide-semiconductor Q4In opening process, the energy in storage capacitor C passes through by storage capacitor C, energy storage inductor L, metal-oxide-semiconductor Q2And metal-oxide-semiconductor Q3The equivalent Boost circuit of composition is delivered to power MOS pipe Q4Grid, in power MOS pipe Q4In turn off process, power MOS pipe Q4Energy on grid passes through by metal-oxide-semiconductor Q3, metal-oxide-semiconductor Q2, energy storage inductor L and storage capacitor C composition equivalent Buck circuits return Into storage capacitor C.
- 2. the gate driving circuit of power MOS pipe in power inverter according to claim 1, it is characterised in that：It is described Direct voltage source V is output 0.7V constant pressure source, and it functions as a charge pump.
- 3. the gate driving circuit of power MOS pipe in power inverter according to claim 1 or 2, it is characterised in that：Institute State metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2With metal-oxide-semiconductor Q3It is N-channel type MOSFET, model uses IRF120, metal-oxide-semiconductor Q4For N-channel type MOSFET, it is 10 μ F that model, which uses SPW20N60S5, storage capacitor C, and energy storage inductor L is 1 μ H.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510703629.7A CN105245091B (en) | 2015-10-27 | 2015-10-27 | The gate driving circuit of power MOS pipe in a kind of power inverter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510703629.7A CN105245091B (en) | 2015-10-27 | 2015-10-27 | The gate driving circuit of power MOS pipe in a kind of power inverter |
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| CN105245091A CN105245091A (en) | 2016-01-13 |
| CN105245091B true CN105245091B (en) | 2018-04-06 |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109639118B (en) * | 2019-01-23 | 2024-01-26 | 上海芯飞半导体技术有限公司 | Self-powered circuit of switching power supply, control chip, switching power supply and electric device |
| CN113346720B (en) * | 2021-06-21 | 2022-12-23 | 东莞市凌风科技有限公司 | High-frequency driving amplifier, high-frequency power conversion circuit and radio frequency beauty instrument |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1561576A (en) * | 2001-10-01 | 2005-01-05 | 皇家飞利浦电子股份有限公司 | Gate driver apparatus having an energy recovering circuit |
| CN103580475A (en) * | 2012-07-19 | 2014-02-12 | 英飞凌科技奥地利有限公司 | Charge recovery in power converter driver stages |
| CN103715870A (en) * | 2013-12-26 | 2014-04-09 | 华为技术有限公司 | Voltage regulator and resonance gate driver thereof |
| KR101519850B1 (en) * | 2014-07-09 | 2015-05-14 | 중앙대학교 산학협력단 | Resonant gate driver for driving mosfet |
-
2015
- 2015-10-27 CN CN201510703629.7A patent/CN105245091B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1561576A (en) * | 2001-10-01 | 2005-01-05 | 皇家飞利浦电子股份有限公司 | Gate driver apparatus having an energy recovering circuit |
| CN103580475A (en) * | 2012-07-19 | 2014-02-12 | 英飞凌科技奥地利有限公司 | Charge recovery in power converter driver stages |
| CN103715870A (en) * | 2013-12-26 | 2014-04-09 | 华为技术有限公司 | Voltage regulator and resonance gate driver thereof |
| KR101519850B1 (en) * | 2014-07-09 | 2015-05-14 | 중앙대학교 산학협력단 | Resonant gate driver for driving mosfet |
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