CN203883673U - Improved Z-source boost DC-DC converter - Google Patents

Improved Z-source boost DC-DC converter Download PDF

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Publication number
CN203883673U
CN203883673U CN201320756259.XU CN201320756259U CN203883673U CN 203883673 U CN203883673 U CN 203883673U CN 201320756259 U CN201320756259 U CN 201320756259U CN 203883673 U CN203883673 U CN 203883673U
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source
inductance
capacitor
diode
voltage
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CN201320756259.XU
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丘东元
杨立强
张波
张桂东
黄子田
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South China University of Technology SCUT
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South China University of Technology SCUT
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Abstract

The utility model discloses an improved Z-source boost DC-DC converter, and the converter comprises a voltage source, a Z-source impedance network, an MOS tube, a second diode, an output filter capacitor, and a load. The Z-source impedance network consists of a first inductor, a second inductor, a first capacitor, a second capacitor, and a first diode. The voltage source Vs, the Z-source impedance network and the MOS tube form a boost circuit. The second diode, the output filter capacitor and the load form an output circuit. The converter is simple in overall circuit structure, is higher in output voltage gain, and is low in capacitor voltage stress of the Z-source impedance network. Moreover, there is no problem of starting impact.

Description

A kind of modified model Z source boost DC-DC converter
Technical field
The utility model relates to field of power electronics, is specifically related to a kind of modified model Z source boost DC-DC converter.
Background technology
In fuel cell power generation, photovoltaic generation, the direct voltage providing due to single solar cell or single fuel cell is lower, cannot meet the need for electricity of existing power consumption equipment, can not meet grid-connected demand, often need a plurality of batteries to be together in series and to reach required voltage.This method greatly reduces the reliability of whole system on the one hand, also needs on the other hand to solve series average-voltage problem.For this reason, needing to be high-tension high-gain DC-DC converter low voltage transition.The Z source boost DC-DC converter proposing is in recent years a kind of high-gain DC-DC converter, but this circuit has higher Z source impedance network capacitance voltage stress, and during circuit start, there is very large inrush current and voltage, limited the application in practice of this circuit.
Utility model content
The shortcoming and deficiency that in order to overcome prior art, exist, the utility model provides a kind of modified model Z source boost DC-DC converter.
The utility model adopts following technical scheme:
A modified model Z source boost DC-DC converter, comprises voltage source V s, Z source impedance network, metal-oxide-semiconductor S, the second diode D 2, output filter capacitor C owith load R l; Described voltage source V s, Z source impedance network and metal-oxide-semiconductor S form booster circuit, described the second diode D 2, output filter capacitor C owith load R lform output circuit.
Described Z source impedance network is by the first inductance L 1, the second inductance L 2, the first capacitor C 1, the second capacitor C 2with the first diode D 2form;
Described voltage source V spositive pole respectively with the first inductance L 1one end and the first capacitor C 1negative pole connect, described the first diode D 1anode respectively with the first inductance L 1the other end and the second capacitor C 2negative pole connect; Described the first diode D 1negative electrode respectively with the first capacitor C 1positive pole and the second inductance L 2one end connect, described the second inductance L 2the other end respectively with the second capacitor C 2positive pole, drain electrode and the second diode D of metal-oxide-semiconductor S 2anodic bonding, described the second diode D 2negative electrode respectively with output filter capacitor C opositive pole and load R lone end connect, described load R lthe other end respectively with output filter capacitor C onegative pole, source electrode and the voltage source V of metal-oxide-semiconductor S snegative pole connect.
Described the first capacitor C 1, the second capacitor C 2with output filter capacitor C obe electrochemical capacitor.
During metal-oxide-semiconductor conducting, voltage source and the first capacitances in series are to the second induction charging energy storage; Voltage source and the second capacitances in series are to the first induction charging energy storage simultaneously; Output filter capacitor is to load supplying; When metal-oxide-semiconductor turn-offs, voltage source and the first inductance to output filter capacitor and load supplying, complete boost function together with the second inductance.
The beneficial effects of the utility model:
The utility model voltage gain is higher, and the capacitance voltage stress of Z source impedance network is low, and inrush current and voltage are had to good inhibitory action;
The utility model circuit is applicable to input voltage and changes wide occasion, as generation of electricity by new energy technical fields such as fuel cell power generation and photovoltaic generations.
Accompanying drawing explanation
Fig. 1 is a kind of modified model Z of the utility model source boost DC-DC converter circuit diagram;
Fig. 2 (a)~Fig. 2 (b) is respectively the equivalent circuit diagram of circuit shown in Fig. 1 when its metal-oxide-semiconductor S turn-on and turn-off, and in figure, solid line represents the part that has electric current to flow through in converter, and dotted line represents the part that in converter, no current flows through;
Oscillogram when Fig. 3 (a)~Fig. 3 (e) is the utility model circuit working, wherein Fig. 3 (a) is the drive waveforms figure of metal-oxide-semiconductor, Fig. 3 (b) is the oscillogram of input voltage source, Fig. 3 (c) is the current waveform figure of the first inductance and the second inductance in Z source impedance network, Fig. 3 (d) is the oscillogram of output voltage, and Fig. 3 (e) is the voltage oscillogram of the first electric capacity and the second electric capacity in Z source impedance network.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the utility model is described in further detail, but execution mode of the present utility model is not limited to this.
Embodiment
As shown in Figure 1, a kind of modified model Z source boost DC-DC converter, comprises voltage source V s, Z source impedance network, metal-oxide-semiconductor S, the second diode D 2, output filter capacitor C owith load R l; Described voltage source V s, Z source impedance network and metal-oxide-semiconductor S form booster circuit, described the second diode D 2, output filter capacitor C owith load R lform output circuit.
Described Z source impedance network is by the first inductance L 1, the second inductance L 2, the first capacitor C 1, the second capacitor C 2with the first diode D 1form;
The concrete connected mode of circuit is:
Described voltage source V spositive pole respectively with the first inductance L 1one end and the first capacitor C 1negative pole connect, described the first diode D 1anode respectively with the first inductance L 1the other end and the second capacitor C 2negative pole connect; Described the first diode D 1negative electrode respectively with the first capacitor C 1positive pole and the second inductance L 2one end connect, described the second inductance L 2the other end respectively with the second capacitor C 2positive pole, drain electrode and the second diode D of metal-oxide-semiconductor S 2anodic bonding, described the second diode D 2negative electrode respectively with output filter capacitor C opositive pole and load R lone end connect, described load R lthe other end respectively with output filter capacitor C onegative pole, source electrode and the voltage source V of metal-oxide-semiconductor S snegative pole connect.
Described the first capacitor C 1, the second capacitor C 2with output filter capacitor C obe electrochemical capacitor.
During metal-oxide-semiconductor S conducting, voltage source V swith the first capacitor C 1series connection is to the second inductance L 2charging energy-storing, simultaneously voltage source V swith the second capacitor C 2series connection is to the first inductance L 1charging energy-storing; Output filter capacitor C oto load R lpower supply; When metal-oxide-semiconductor S turn-offs, voltage source V swith the first inductance L 1with the second inductance L 2together to output filter capacitor C owith load R lpower supply, completes boost function.Whole circuit structure is simple, has higher output voltage gain, and the capacitance voltage stress in Z source impedance network is low, and circuit does not exist startup shock problem.
Specific works process of the present utility model:
Stage 1, as shown in Figure 2 (a) shows: metal-oxide-semiconductor S conducting, now the first diode D 1with the second diode D 2in off state.Circuit has formed three loops, respectively: voltage source V swith the second capacitor C 2together to the first inductance L 1carry out charging energy-storing, form loop; Voltage source V swith the first capacitor C 1together to the second inductance L 2carry out charging energy-storing, form loop; Output filter capacitor C oto load R lpower supply, forms loop.
Stage 2, as shown in Fig. 2 (b): metal-oxide-semiconductor S turn-offs, now the first diode D 1with the second diode D 2all conductings.Circuit has formed three loops, respectively: voltage source V swith the first inductance L 1with the second inductance L 2together to output filter capacitor C owith load R lpower supply, forms the loop of boosting; The first inductance L 1to the first capacitor C 1charging, forms loop; The second inductance L 2to the second capacitor C 2charging, forms loop.
Situation to sum up, the duty ratio of supposing metal-oxide-semiconductor S is D, switch periods is T s.Due to the symmetry of Z source impedance network, i.e. the first inductance L 1with the second inductance L 2inductance value equate, the first capacitor C 1with the second capacitor C 2capacitance equate.Therefore, there is v l1=v l2=v l, V c1=V c2=V c.V l1, v l2, V c1and V c2it is respectively the first inductance L 1, the second inductance L 2, the first capacitor C 1with the second capacitor C 2voltage, thereby set v land V cbe respectively inductive drop and the capacitance voltage of Z source impedance network.
In a switch periods, making output voltage is V o, when converter enters after steady operation, draw following voltage relationship derivation.
Metal-oxide-semiconductor S conduction period, voltage source V swith the first inductance L 1with the second capacitor C 2series connection, due to voltage source V spolarity and the second capacitor C 2polarity of voltage be consistent, therefore have formula:
v L1=v L=V s+V C2=V s+V C (1)
Meanwhile, voltage source V swith the second inductance L 2with the first capacitor C 1series connection, equally due to voltage source V spolarity and the first capacitor C 1polarity of voltage be consistent, therefore have formula:
v L2=v L=V s+V C1=V s+V C (2)
Metal-oxide-semiconductor S is at a switch periods T sinterior ON time is DT s.
Metal-oxide-semiconductor S blocking interval, the first diode D 1conducting, the first inductance L 1with the first capacitor C 1parallel connection, therefore has formula:
v L1=v L=-V C1=-V C (3)
Meanwhile, the second inductance L 2with the second capacitor C 2parallel connection, therefore has formula:
v L2=v L=-V C2=-V C (4)
Voltage source V swith the first inductance L 1, the second inductance L 2with output circuit part series connection, therefore there is formula:
V o=V s-v L1-v L2=V s-2v L=V s+2V C (5)
Metal-oxide-semiconductor S is at a switch periods T sthe interior turn-off time is (1-D) T s.
By analyzing above, according to the symmetry of Z source impedance network and inductance weber, count conservation principle, simultaneous formula (1)~(4), can obtain:
(V s+V C)DT s+(-V C)(1-D)T s=0 (6)
Therefore, can obtain the capacitance voltage V of Z source impedance network cwith voltage source V srelational expression be:
V C = D 1 - 2 D V s - - - ( 7 )
Again by formula (5), gain factor expression formula that can this circuit is:
G = V o V s = 1 1 - 2 D - - - ( 8 )
By formula (7) and formula (8), can be obtained the capacitance voltage V of this circuit Z source impedance network cwith output voltage V orelational expression be:
V C=DV o (9)
Duty ratio D during due to the utility model circuit working is no more than 0.5, therefore by formula (9), can be found out the capacitance voltage V in the utility model circuit Z source impedance network cmaximum be no more than the output voltage V of 0.5 times ovalue, thereby the capacitance voltage stress in the utility model circuit Z source impedance network is lower.If Fig. 3 (a) is the driving V of metal-oxide-semiconductor S goscillogram; Fig. 3 (b) is voltage source V soscillogram; Fig. 3 (c) is the first inductance L in Z source impedance network 1with the second inductance L 2current i loscillogram; Fig. 3 (d) is output voltage V ooscillogram; Fig. 3 (e) is the first capacitor C in Z source impedance network 1with the second capacitor C 2voltage V coscillogram.
In addition, due to the topological structure of the utility model circuit own, when it starts, the first inductance L in Z source impedance network 1with the second inductance L 2inrush current is had to inhibitory action, be conducive to the soft start of converter, reduced the impact damage to device.
In sum, the utility model circuit not only has higher voltage gain, and in Z source impedance network, capacitance voltage stress is low, does not have startup impulse circuit.
Above-described embodiment is preferably execution mode of the utility model; but execution mode of the present utility model is not limited by the examples; other any do not deviate from change, the modification done under Spirit Essence of the present utility model and principle, substitutes, combination, simplify; all should be equivalent substitute mode, within being included in protection range of the present utility model.

Claims (3)

1. a modified model Z source boost DC-DC converter, comprises voltage source (V s), it is characterized in that, also comprise Z source impedance network, metal-oxide-semiconductor (S), the second diode (D 2), output filter capacitor (C o) and load (R l); Described Z source impedance network is by the first inductance (L 1), the second inductance (L 2), the first electric capacity (C 1), the second electric capacity (C 2) and the first diode (D 1) form;
Described voltage source (V s) positive pole respectively with the first inductance (L 1) one end and the first electric capacity (C 1) negative pole connect, described the first diode (D 1) anode respectively with the first inductance (L 1) the other end and the second electric capacity (C 2) negative pole connect; Described the first diode (D 1) negative electrode respectively with the first electric capacity (C 1) positive pole and the second inductance (L 2) one end connect, described the second inductance (L 2) the other end respectively with the second electric capacity (C 2) positive pole, drain electrode and the second diode (D of metal-oxide-semiconductor (S) 2) anodic bonding, described the second diode (D 2) negative electrode respectively with output filter capacitor (C o) positive pole and load (R l) one end connect, described load (R l) the other end respectively with output filter capacitor (C o) negative pole, source electrode and the voltage source (V of metal-oxide-semiconductor (S) s) negative pole connect.
2. a kind of modified model Z according to claim 1 source boost DC-DC converter, is characterized in that described voltage source (V s), Z source impedance network and metal-oxide-semiconductor (S) form booster circuit, the second diode (D 2), output filter capacitor (C o) and load (R l) formation output circuit.
3. a kind of modified model Z according to claim 1 source boost DC-DC converter, is characterized in that, described the first electric capacity (C 1), the second electric capacity (C 2) and output filter capacitor (C o) be electrochemical capacitor.
CN201320756259.XU 2013-11-26 2013-11-26 Improved Z-source boost DC-DC converter Active CN203883673U (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103633839A (en) * 2013-11-26 2014-03-12 华南理工大学 Improved Z-source boosting DC (direct current)-DC converter
CN106100403A (en) * 2016-08-26 2016-11-09 广东工业大学 A kind of multi output Z source half-bridge converter
CN107070212A (en) * 2017-06-19 2017-08-18 广东工业大学 A kind of back-pressure type active impedance network booster system
CN109842313A (en) * 2019-03-07 2019-06-04 广东工业大学 A kind of quasi- z source inventer of switching boost type
CN111245219A (en) * 2020-01-15 2020-06-05 广东工业大学 Novel embedded impedance network DC-DC converter with high power density and switching power supply

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103633839A (en) * 2013-11-26 2014-03-12 华南理工大学 Improved Z-source boosting DC (direct current)-DC converter
CN106100403A (en) * 2016-08-26 2016-11-09 广东工业大学 A kind of multi output Z source half-bridge converter
CN107070212A (en) * 2017-06-19 2017-08-18 广东工业大学 A kind of back-pressure type active impedance network booster system
CN109842313A (en) * 2019-03-07 2019-06-04 广东工业大学 A kind of quasi- z source inventer of switching boost type
CN111245219A (en) * 2020-01-15 2020-06-05 广东工业大学 Novel embedded impedance network DC-DC converter with high power density and switching power supply

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