CN203722474U - Quasi-Z-source DC-DC boost converter circuit - Google Patents

Quasi-Z-source DC-DC boost converter circuit Download PDF

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Publication number
CN203722474U
CN203722474U CN201420078873.XU CN201420078873U CN203722474U CN 203722474 U CN203722474 U CN 203722474U CN 201420078873 U CN201420078873 U CN 201420078873U CN 203722474 U CN203722474 U CN 203722474U
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China
Prior art keywords
inductance
source
circuit
voltage
accurate
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Expired - Fee Related
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CN201420078873.XU
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Chinese (zh)
Inventor
丘东元
杨立强
张波
张桂东
黄子田
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South China University of Technology SCUT
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South China University of Technology SCUT
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Abstract

The utility model provides a quasi-Z-source DC-DC boost converter circuit including a voltage source, a quasi-Z-source impedance network composed of a first inductor, a second inductor, a first capacitor, a second capacitor and a diode, an MOS tube, a third inductor, an output capacitor and a load. According to the utility model, the voltage source, the quasi-Z-source impedance network and the MOS tube are connected in series to form a boost circuit; and the third inductor, the output capacitor and the load constitutes an output circuit. The entire circuit is simple in structure; only one MOS tube is provided, and the input and output are connected to the common ground; the quasi-Z-source DC-DC boost converter circuit has higher output voltage gain; the quasi-Z-source impedance network has low capacitor voltage stress; no start impact problem occurs to the circuit; and the output capacitor has no transient current impact on the MOS tube at the moment when the MOS tube is opened.

Description

A kind of accurate Z source DC-DC voltage boosting converter circuit
Technical field
The utility model relates to Power Electronic Circuit technical field, is specifically related to a kind of accurate Z source DC-DC voltage boosting converter circuit.
Background technology
In fuel cell power generation, photovoltaic generation, the direct voltage providing due to single solar cell or single fuel cell is lower, cannot meet the need for electricity of existing power consumption equipment, can not meet the demand of grid-connected voltage, often need multiple batteries to be together in series and to reach required voltage.This method greatly reduces the reliability of whole system on the one hand, also needs on the other hand to solve series average-voltage problem.For this reason, needing to be high-tension high-gain DC-DC converter low voltage transition.The accurate Z source DC-DC converter proposing is in recent years a kind of high-gain DC-DC converter, but this circuit input and output are not altogether, thereby be unfavorable for control circuit design, and there is higher accurate Z source impedance network capacitance voltage stress, when circuit start, also there is larger inrush current and voltage, limited the application in practice of this circuit.
Utility model content
The purpose of this utility model is to overcome above-mentioned the deficiencies in the prior art, and a kind of accurate Z source DC-DC voltage boosting converter circuit is provided.
A kind of accurate Z source DC-DC voltage boosting converter circuit, comprises voltage source, accurate Z source impedance network, metal-oxide-semiconductor, the 3rd inductance, output capacitance and load.Described accurate Z source impedance network is made up of the first inductance, the second inductance, the first electric capacity, the second electric capacity and diode; Described voltage source, accurate Z source impedance network and metal-oxide-semiconductor are followed in series to form booster circuit; The 3rd inductance, output capacitance and load form output circuit.
Further, the concrete connected mode of above-mentioned accurate Z source DC-DC voltage boosting converter circuit is: the positive pole of described voltage source is connected with one end of the first inductance and the negative pole of the first electric capacity respectively; The anode of described diode is connected with the other end of the first inductance and the negative pole of the second electric capacity respectively; The negative electrode of described diode is connected with the positive pole of the first electric capacity and one end of the second inductance respectively; The drain electrode of described metal-oxide-semiconductor is connected with positive pole, the other end of the second inductance and one end of the 3rd inductance of the second electric capacity respectively; The other end of described the 3rd inductance is connected with the positive pole of output capacitance and one end of load respectively; The negative pole of described voltage source is connected with negative pole, the other end of load and the source electrode of metal-oxide-semiconductor of output capacitance respectively.
Compared with prior art, the utility model circuit tool has the following advantages and technique effect: voltage gain is higher, input and output altogether, the capacitance voltage stress of accurate Z source impedance network is low, inrush current and voltage are had to good inhibitory action, and metal-oxide-semiconductor is opened moment, output capacitance can not cause transient current to impact to metal-oxide-semiconductor.The utility model circuit is applicable to input voltage and changes wide occasion, as the generation of electricity by new energy such as fuel cell power generation and photovoltaic generation technical field.
Brief description of the drawings
Fig. 1 is the accurate Z of the one in the utility model embodiment source DC-DC voltage boosting converter circuit.
Fig. 2 a, Fig. 2 b are respectively the equivalent circuit diagrams that the source of a kind of accurate Z shown in Fig. 1 DC-DC voltage boosting converter circuit obtains from voltage relationship angle in the time of its metal-oxide-semiconductor S turn-on and turn-off, in figure, solid line represents the part that has electric current to flow through in converter, and dotted line represents the part that in converter, no current flows through.
Fig. 3 a is the gain curve of the utility model circuit and the comparison diagram of the gain curve of basic booster circuit, and in figure, solid line represents the gain curve of the utility model circuit, and dotted line represents the gain curve of basic booster circuit;
Fig. 3 b is that the gain curve of the utility model circuit in Fig. 3 a is less than the comparison diagram in 0.4 with the gain curve of basic booster circuit at duty ratio d.
Fig. 4 is the working waveform figure of the utility model circuit.
Embodiment
Below in conjunction with accompanying drawing, concrete enforcement of the present utility model is further described.
With reference to figure 1, the accurate Z of one described in the utility model source DC-DC voltage boosting converter circuit, it comprises voltage source V i, by the first inductance L 1, the second inductance L 2, the first capacitor C 1, the second capacitor C 2with the accurate Z source impedance network (as shown in dotted line frame in Fig. 1) that diode D forms, metal-oxide-semiconductor S, the 3rd inductance L 3, output capacitance C owith load R l.The accurate Z of one described in the utility model source DC-DC voltage boosting converter circuit, described voltage source V i, accurate Z source impedance network and metal-oxide-semiconductor S are followed in series to form booster circuit; Described the 3rd inductance L 3, output capacitance C owith load R lform output circuit.When metal-oxide-semiconductor S conducting, described voltage source V iwith the first capacitor C 1series connection is to the second inductance L 2charging energy-storing; Voltage source V iwith the second capacitor C 2series connection is to the first inductance L 1charging energy-storing; Meanwhile, voltage source V iwith the first capacitor C 1, the second capacitor C 2, the 3rd inductance L 3give together output capacitance C owith load R lpower supply; When metal-oxide-semiconductor S turn-offs, described voltage source V iwith the first inductance L 1, the second inductance L 2together to the 3rd inductance L 3, output capacitance C owith load R lpower supply.Whole circuit structure is simple, only has a metal-oxide-semiconductor, input and output common ground, have higher output voltage gain, the capacitance voltage stress in accurate Z source impedance network is low, and circuit does not exist startup shock problem, and metal-oxide-semiconductor is opened moment, output capacitance can not cause transient current to impact to metal-oxide-semiconductor.
The concrete connection of the utility model circuit is as follows: described voltage source V ipositive pole respectively with the first inductance L 1one end and the first capacitor C 1negative pole connect; The anode of described diode D respectively with the first inductance L 1the other end and the second capacitor C 2negative pole connect; The negative electrode of described diode D respectively with the first capacitor C 1positive pole and the second inductance L 2one end connect; The drain electrode of described metal-oxide-semiconductor S respectively with the second capacitor C 2positive pole, the second inductance L 2the other end and the 3rd inductance L 3one end connect; Described the 3rd inductance L 3the other end respectively with output capacitance C opositive pole and load R lone end connect; Described voltage source V inegative pole respectively with output capacitance C onegative pole, load R lthe other end be connected with the source electrode of metal-oxide-semiconductor S.
Fig. 2 a, Fig. 2 b have provided the process chart of the utility model circuit.The equivalent circuit diagram that Fig. 2 a, Fig. 2 b obtain from voltage relationship angle while being respectively metal-oxide-semiconductor S turn-on and turn-off.
The course of work of the present utility model is as follows:
In the stage 1, as Fig. 2 a:MOS pipe S conducting, now diode D is in off state.Circuit has formed three loops, respectively: voltage source V iwith the second capacitor C 2together to the first inductance L 1carry out charging energy-storing, form loop; Voltage source V iwith the first capacitor C 1together to the second inductance L 2carry out charging energy-storing, form loop; Voltage source V iwith the first capacitor C 1, the second capacitor C 2, the 3rd inductance L 3together to output capacitance C owith load R lpower supply, forms loop.
In the stage 2, as Fig. 2 b:MOS pipe, S turn-offs, now diode D conducting, and circuit has formed three loops, respectively: voltage source V iwith the first inductance L 1, the second inductance L 2together to the 3rd inductance L 3, output capacitance C owith load R lpower supply, forms loop; The first inductance L 1with the first capacitor C 1parallel connection, forms loop; The second inductance L 2with the second capacitor C 2parallel connection, forms loop.
To sum up situation, the duty ratio of establishing metal-oxide-semiconductor S is d, switch periods is T s.Due to the symmetry of accurate Z source impedance network, i.e. the first inductance L 1with the second inductance L 2inductance value equate, the first capacitor C 1with the second capacitor C 2capacitance equate.Therefore, there is v l1=v l2=v l, V c1=V c2=V c.V l1, v l2, V c1and V c2it is respectively the first inductance L 1, the second inductance L 2, the first capacitor C 1with the second capacitor C 2voltage, therefore set v land V cbe as the criterion respectively Z source impedance network inductive drop and capacitance voltage, v l3it is the 3rd inductance L 3voltage, V sfor the voltage between metal-oxide-semiconductor S drain electrode and source electrode.At a switch periods T sin, making output voltage is V o.When converter enters after steady operation, draw following voltage relationship derivation.
Metal-oxide-semiconductor S conduction period, the operative scenario described in the corresponding stage 1, therefore has following formula:
v L1=v L=V i+V C2=V i+V C (1)
v L2=v L=V i+V C1=V i+V C (2)
v L3=-V o (3)
Metal-oxide-semiconductor S ON time is dT s.
Metal-oxide-semiconductor S blocking interval, the operative scenario described in the corresponding stage 2, therefore has following formula:
v L1=v L=-V C1=-V C (4)
v L2=v L=-V C2=-V C (5)
V S=V i+v L+V C=V i+2V C (6)
v L3=V S-V o=V i+2V C-V o (7)
The metal-oxide-semiconductor S turn-off time is (1-d) T s.
By analyzing above, count conservation principle according to the symmetry of accurate Z source impedance network and inductance weber, simultaneous formula (1), (2), (4) and (5), can obtain:
(V i+V C)dT s+(-V C)(1-d)T s=0 (6)
Therefore, can obtain the capacitance voltage V of accurate Z source impedance network cwith voltage source V irelational expression be:
V C = d 1 - 2 d V i - - - ( 7 )
By formula (3) and (7), and to the 3rd inductance L 3inductance weber is counted conservation principle in application, can obtain:
(-V o)dT s+(V i+2V C-V o)(1-d)T s=0 (8)
Again by formula (7), gain expressions that can this utility model circuit is:
G = V o V i = 1 - d 1 - 2 d - - - ( 9 )
Be the comparison diagram of the gain curve of the utility model circuit and the gain curve of basic booster circuit as shown in Figure 3 a; Fig. 3 b is that in Fig. 3 a, the utility model circuit gain curve is less than the comparison diagram in 0.4 with the gain curve of basic booster circuit at duty ratio d, and in figure, solid line represents the gain curve of the utility model circuit, and dotted line represents the gain curve of basic booster circuit.As seen from the figure, the utility model circuit is in the situation that duty ratio d is no more than 0.5, and it is very large that gain G just can reach, and the utility model circuit can not exceed 0.5 in metal-oxide-semiconductor duty ratio, thereby by contrast, the gain of the utility model circuit is very high.
Can be obtained the capacitance voltage V of the accurate Z source impedance network of the utility model circuit by formula (7) and formula (9) cwith voltage source V iand output voltage V orelational expression be:
V C=V o-V i (10)
Can be found out the capacitance voltage V of the accurate Z source impedance network of the utility model circuit by formula (10) cmaximum be no more than output voltage V owith voltage source V idifference, thereby make the capacitance voltage stress step-down of the accurate Z source impedance network of the utility model circuit.Main oscillogram while being illustrated in figure 4 the utility model circuit working, V in figure gfor the driving of metal-oxide-semiconductor, i l1, i l2and i l3be respectively the first inductance L 1, the second inductance L 2with the 3rd inductance L 3electric current.
In addition, due to the topological structure of the utility model circuit own, in the time that it starts, the first inductance L in accurate Z source impedance network 1with the second inductance L 2inrush current is had to inhibitory action, be conducive to the soft start of converter, reduced the impact damage to device; In like manner, due to the 3rd inductance L 3existence, so open moment when metal-oxide-semiconductor, output capacitance can not cause transient current to impact to metal-oxide-semiconductor.
In sum, the utility model circuit not only has higher voltage gain, and input and output altogether, and accurate Z source impedance network capacitance voltage stress is low, do not have startup impulse circuit, and metal-oxide-semiconductor opens moment, output capacitance can not cause transient current to impact to metal-oxide-semiconductor.
Above-described embodiment is preferably execution mode of the utility model; but execution mode of the present utility model is not limited by the examples; other any do not deviate from change, the modification done under Spirit Essence of the present utility model and principle, substitutes, combination, simplify; all should be equivalent substitute mode, within being included in protection range of the present utility model.

Claims (2)

1. an accurate Z source DC-DC voltage boosting converter circuit, is characterized in that comprising voltage source (V i), accurate Z source impedance network, metal-oxide-semiconductor (S), the 3rd inductance (L 3), output capacitance (C o) and load (R l); Described accurate Z source impedance network is by the first inductance (L 1), the second inductance (L 2), the first electric capacity (C 1), the second electric capacity (C 2) and diode (D) formation; Described voltage source (V i), accurate Z source impedance network and metal-oxide-semiconductor (S) be followed in series to form booster circuit; Described the 3rd inductance (L 3), output capacitance (C o) and load (R l) formation output circuit.
2. the accurate Z of one according to claim 1 source DC-DC voltage boosting converter circuit, is characterized in that described voltage source (V i) positive pole respectively with the first inductance (L 1) one end and the first electric capacity (C 1) negative pole connect; The anode of described diode (D) respectively with the first inductance (L 1) the other end and the second electric capacity (C 2) negative pole connect; The negative electrode of described diode (D) respectively with the first electric capacity (C 1) positive pole and the second inductance (L 2) one end connect; The drain electrode of described metal-oxide-semiconductor (S) respectively with the second electric capacity (C 2) positive pole, the second inductance (L 2) the other end and the 3rd inductance (L 3) one end connect; Described the 3rd inductance (L 3) the other end respectively with output capacitance (C o) positive pole and load (R l) one end connect; Described voltage source (V i) negative pole respectively with output capacitance (C o) negative pole, load (R l) the other end be connected with the source electrode of metal-oxide-semiconductor (S).
CN201420078873.XU 2014-02-24 2014-02-24 Quasi-Z-source DC-DC boost converter circuit Expired - Fee Related CN203722474U (en)

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Application Number Priority Date Filing Date Title
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103825457A (en) * 2014-02-24 2014-05-28 华南理工大学 Quasi-Z-source DC-DC boost converter circuit
CN106972751A (en) * 2017-04-11 2017-07-21 华南理工大学 A kind of two-tube Z sources DC voltage converter
CN109639168A (en) * 2018-12-30 2019-04-16 盐城工学院 A kind of DC communication electric power conversion apparatus
CN109687744A (en) * 2018-12-30 2019-04-26 盐城工学院 A kind of DC communication electric power conversion apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103825457A (en) * 2014-02-24 2014-05-28 华南理工大学 Quasi-Z-source DC-DC boost converter circuit
CN106972751A (en) * 2017-04-11 2017-07-21 华南理工大学 A kind of two-tube Z sources DC voltage converter
CN106972751B (en) * 2017-04-11 2019-12-10 华南理工大学 Double-tube Z-source direct-current voltage converter
CN109639168A (en) * 2018-12-30 2019-04-16 盐城工学院 A kind of DC communication electric power conversion apparatus
CN109687744A (en) * 2018-12-30 2019-04-26 盐城工学院 A kind of DC communication electric power conversion apparatus

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CF01 Termination of patent right due to non-payment of annual fee
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Granted publication date: 20140716

Termination date: 20210224