CN101521459B - Resonant switched capacitor direct current voltage converter - Google Patents

Resonant switched capacitor direct current voltage converter Download PDF

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Publication number
CN101521459B
CN101521459B CN2008100823592A CN200810082359A CN101521459B CN 101521459 B CN101521459 B CN 101521459B CN 2008100823592 A CN2008100823592 A CN 2008100823592A CN 200810082359 A CN200810082359 A CN 200810082359A CN 101521459 B CN101521459 B CN 101521459B
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switch
voltage
diode
node
voltage node
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CN101521459A (en
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郑家伟
何濠辉
丁凯
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Hong Kong Polytechnic University HKPU
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Hong Kong Polytechnic University HKPU
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Abstract

The invention relates to a resonant switched capacitor direct current voltage converter which comprises a first voltage node, a second voltage node, a first switch, a second switch, a first diode, a second diode and a control circuit, wherein a first voltage exists between the first voltage node and a negative wire; a second voltage exists between the second voltage node and the negative wire; andthe control circuit provides switching gate signals for the first and the second switches. The resonant switched capacitor direct current voltage converter further comprises a center-tapped inductor and a resonant capacitor, wherein the center-tapped inductor is connected between the first switch and the second switch; and the resonant capacitor is connected between the common node of the first and the second diodes and the central node of the center-tapped inductor. Compared with the conventional switched capacitor direct current voltage converter, the invention has the advantages of reducing complexity, loss and cost, improving the speed, and avoiding the limitation.

Description

Resonant switched capacitor direct current voltage converter
Technical field
The present invention relates to resonant switched capacitor direct current voltage converter.
Background technology
In DC power supply conversion field, adopt a kind of translation circuit to come the different voltages of conversion in conjunction with switch and electric capacity.This quasi-converter is used for store electrical energy with electric capacity, be referred to as the switching capacity converter (SwitchedCapacity Converter, SCC).Because this quasi-converter do not have inductance or transformer, its volume is less than the converter of other types and be easy to make on integrated circuit.But, for the switching capacity charging and discharging time usually the high peak electric current can appear.Therefore, this quasi-converter is generally used for environment under low pressure.U.S. Patent Publication No. US20040141345A1 provides a kind of resonant switched capacitor converter (SwitchedCapacitor Resonant Converter that is called, SCRC) new switched-capacitor circuit, it can be operated under high switching frequency and the high voltage environment.
SCRC is based on to remove and comprises that the main magnetic energy memory device of controlled resonant converter designs.SCRC is operated in the Zero Current Switch environment, and is extremely low and do not have EMI (ElectromagneticInterference, an electromagnetic interference) problem as switching loss.And its efficient is also quite high, might be higher than 90%.It is simple in structure, in circuit only add a small inductor with switching capacity resonance, so the cost of magnetic part is lower.
Though SCRC has plurality of advantages, simple gate drive circuit not can be applicable to this converter, needs isolating transformer and/or half-bridge gate to drive, and has therefore improved the complexity of SCRC.And the stray inductance in the door driving transformer has limited actuating speed, causes producing in frequency applications more switching losses.Half-bridge gate drives limitation and converter cost with high-frequency operation and improves.
Summary of the invention
The object of the invention is to provide a kind of resonant switched capacitor direct current voltage converter, this DC converter will adopt simple gate drive circuit, reduced the complexity of SCRC, improved actuating speed by reducing stray inductance simultaneously, reduced the switching loss in the frequency applications, and avoided the limitation of high-frequency operation, reduced the cost of converter.
In order to reach the foregoing invention purpose, the present invention is a kind of resonant switched capacitor direct current voltage converter, comprise first voltage node, second voltage node, first switch, second switch, first diode, second diode, control circuit wherein, has first voltage between first voltage node and the negative wire, has second voltage between this second voltage node and the negative wire, control circuit provides switch gate signal for this first switch and second switch, and this resonant switched capacitor direct current voltage converter further comprises centre cap inductance and resonant capacitance, wherein, the centre cap inductance is connected between described first switch and the second switch, and resonant capacitance is connected between the Centroid of the common node of described first diode and second diode and this centre cap inductance; This first switch and this second switch are insulated gate bipolar transistor or a pair of CMOSFET pipe switch; When wherein this first switch and this second switch were a pair of CMOSFET pipe switch, this first switch was the P-channel metal-oxide-semiconductor field effect transistor, and this second switch is a N NMOS N-channel MOS N field effect transistor; And the annexation between switch, voltage node, diode, the negative wire is one of following three kinds: first kind: described first switch and second switch are connected between first voltage node and the negative wire, and this first diode and this second diode are connected between this first voltage node and this second voltage node; Second kind: described first switch and second switch are connected between this first voltage node and this second voltage node, and this first diode and this second diode are connected between this second voltage node and this negative wire; The third: described first switch and second switch are connected between this first voltage node and this negative wire, and this first diode and this second diode are connected between this second voltage node and this negative wire.
As the described DC voltage converter of the preferred specific embodiment of the present invention, wherein, described control circuit is a self-starting door Drive and Control Circuit.
As the described DC voltage converter of the preferred specific embodiment of the present invention, wherein, when described annexation was second kind, described control circuit utilized the voltage between described first node and the Section Point to offer the power supply of a driving as self-starting
As the described resonant switched capacitor direct current voltage converter of the preferred specific embodiment of the present invention, wherein, when described annexation was the third, described control circuit utilized the voltage between described first voltage node and the described negative wire to offer the power supply of a driving as self-starting.
The present invention is to use simple door a little and drives, and has reduced the complexity of SCRC, has improved actuating speed by reducing stray inductance simultaneously, has reduced the switching loss in the frequency applications, and has avoided the limitation of high-frequency operation, has reduced the cost of converter.
Description of drawings
Following with reference to accompanying drawing detailed description advantages and features of the invention, wherein
Fig. 1 is the circuit diagram according to the booster type resonant switched capacitor direct current voltage converter of the specific embodiment of the invention;
Fig. 2 and Fig. 3 are the operation principle schematic diagram of circuit shown in Figure 1;
Fig. 4 is the gate pole and the current waveform figure of circuit shown in Figure 1;
Fig. 5 is the gate pole source voltage and the capacitance current oscillogram of circuit shown in Figure 1;
Fig. 6 is the drain electrode gate voltage and the capacitance current oscillogram of circuit shown in Figure 1;
Fig. 7 is the circuit diagram according to the voltage-dropping type resonant switched capacitor direct current voltage converter of the specific embodiment of the invention; And
Fig. 8 is the circuit diagram according to the inverse type resonant switched capacitor direct current voltage converter of the specific embodiment of the invention.
Embodiment
Figure 1 shows that the circuit diagram of booster type resonant switched capacitor direct current voltage converter 13.DC voltage converter 13 comprises a pair of CMOSFET pipe (MOSFET) switch 4,5.Switch 4 is P-channel metal-oxide-semiconductor field effect transistor, and switch 5 is N NMOS N-channel MOS N field effect transistor.In other embodiments, also can adopt insulated gate bipolar transistor (IGBTs) and other semiconductor switch that is suitable for.Each switch all is furnished with the part of reverse parallel connection diode as the MOSFET encapsulation.First and second diodes 6,7 are connected between first and second voltage nodes 1,2.
DC voltage converter 13 has the first voltage V1 between first voltage node 1 and ground or negative wire 3, have the second voltage voltage V2 between second voltage node and ground or negative wire 3.Ground or negative wire 3 are positioned at the electromotive force that arbitrary voltage is lower than node 1,2.Two filter capacitors 8,11 are in parallel with the first and second voltage end V1, V2 respectively.
Centre cap inductance 10 is connected between first and second MOSFET4,5.Resonant capacitance 9 is connected between the Centroid 15 of the common node of diode 6,7 and inductance 10.In converter, electric capacity 9 provides main energy storage device.Inductance 10 can adopt by polymer-bonded magnetic core made inductance or air core inductor and electric capacity 9 generation resonance.
Self-powered door Drive and Control Circuit 12 provides switch gate signal for MOSFET4,5.Door Drive and Control Circuit 12 provides high voltage to open N-channel MOS FET5 between gate pole and source electrode and turn-offs P channel mosfet 4.Door Drive and Control Circuit 12 provides zero volt or best negative voltage to open P channel mosfet 4 and turn-off N-channel MOS FET5.Preferably, input voltage V1 should be less than or equal to MOSFET4,5 gate pole and the ceiling voltage between the source electrode.Door drives gate drive circuit 12 and can be integrated circuit or have the gate electrode drive signals that the high speed crystal oscillating circuit provides necessity.
DC voltage converter 13 is the booster type voltage changer.Voltage V1 is an input and V2 is an output.In the ideal case, voltage V2 equals the twice of voltage V1.
DC voltage converter 13 is by electric capacity 9 charging and discharging work.Thereby the electric capacity that electric capacity 9 act as with inductance 10 resonance obtains the Zero Current Switch environment for MOSFET.When the MOSFET4 unlatching, diode 7 forward bias are also opened, and electric current is by comprising the top inductance of MOSFET4, inductance 10, the series circuit of switching capacity and diode 7.At first, the electric current in the inductance always is zero; Therefore the electric current of series circuit is zero under the opening.Since the series connection electric capacity 9 and the top inductance of inductance 10, the electric current in series circuit be with
2 π L 2 C
Be the sine curve in cycle, wherein L is the inductance value of inductance 10, and C is the capacitance of electric capacity 9.Suppose at first to pass through positive current, at the end of first half period, thereby diode 7 reverse bias are offset the electric current of negative half-cycle.The zero current environment produces and MOSFET4 turn-offs.The 2nd MOSFET5 opens and diode 6 forward bias.Initial current is that the negative half-cycle of zero and resonance current flows through.At the end of negative half-cycle, diode 6 reverse bias produce the zero current environment.By being longer than the switch mosfet time of LC resonance current half period, reach the effect that produces Zero Current Switch.
Because switching capacity 9 is by resonance sinusoidal current charging and discharging, so there is not the current spike problem in circuit.
Fig. 2 and Fig. 3 show two stages in a boosted switch cycle, and runic is represented current path.Fig. 4 shows gate pole and current waveform.
With reference to Fig. 1 and Fig. 4, booster type switching capacity converter of the present invention comprises a pair of complementary P raceway groove/N-channel MOS FET4,5.Self-powered door Drive and Control Circuit 12 provides switch gate signal for MOSFET4,5.Door Drive and Control Circuit 12 provides high voltage to open N-channel MOS FET5 between gate pole and source electrode and turn-offs P channel mosfet 4.Door driving 12 provides gate pole and drain voltage to open P channel mosfet 4 and turn-offs N-channel MOS FET5.When self-powered control circuit 12 provides when being higher than 3 signal for two complementary switchs, the N channel switches of half-bridge arm is opened, and utilizes the bottom inductance and switched inductors generation resonance of centre cap inductance simultaneously.Perhaps, when the self-powered control circuit provides the signal that is lower than ground 3 for two complementary switchs, the drain electrode of top P channel switches and the voltage between the gate pole are in a high position, so the top MOSFET4 of half-bridge arm opens the top inductance and the switched inductors resonance of employing centre cap inductance.
With reference to Fig. 2 and Fig. 4, at time t 0The place, MOSFET5 opens and the MOSFET4 shutoff.Diode 6 forward bias.11 pairs of load discharges that are connected second voltage node 2 of filter capacitor.MOSFET5 and diode 6 are connected with the bottom inductance of electric capacity 9 and inductance 10.The sinusoidal current that produces with the switching capacity of the bottom inductance resonance of inductance 10 is through series circuit.At the end of first harmonic period, series current (electric capacity 9 electric currents) be zero and diode 6 reverse bias offset electric current in the negative half-cycle.Electric capacity is recharged and reaches direct voltage V1.
With reference to Fig. 3 and Fig. 4, at time t 1The place, diode 6 reverse bias and electric current are zero.MOSFET4 opens and the MOSFET5 shutoff.Diode 7 forward bias.Input voltage V1 and switching capacity 9 series connection, under the ideal state, voltage V2 is the twice of voltage V1, the negative half-cycle of resonance current produces.Filter capacitor 11 charges once more.At the end of negative half-cycle, diode 7 reverse bias and electric current stops.At time t 2Open and the MOSFET4 shutoff once more at place, MOSFET5.
Fig. 5 and Fig. 6 show the waveform of resonant switched capacitor DC converter, and under boost mode, this converter is furnished with above-mentioned parameter and device value.Input voltage V1 measured value is 12V, and output voltage V 2 measured values are 24V.Power supply (17.1W) maximal efficiency is 92.53%.Rated power supply (50W) efficient is 86.38%.The horizontal resolution of Fig. 5 and Fig. 6 figure is per unit 1 microsecond.At switching frequency is under the situation of 200kHz, and be 2.5 microseconds the switching time of each MOSFET.The resonance time of electric capacity 9 and inductance 10 is 4 microseconds.Therefore, the Semi-resonance cycle is 4 microseconds.
As seen, the invention provides resonant switched capacitor DC converter with boost function.Except needs centre cap inductance comes and switching capacity resonance, DC circuit of the present invention also comprises a pair of complementary P raceway groove/N-channel MOS FET, and therefore two complementary switchs are shared same self-powered control circuit, drives cost thereby reduce door.The drive signal of no time lag control can be directly used in complementary switch, and the electric current shoot through of half-bridge arm can be limited by the centre cap inductance.
Fig. 7 is second specific embodiment of the present invention.Adjusting and voltage-reduction switch electric capacity quasi resonant convertor 20 has the first voltage end V1 between first voltage node 1 and ground or negative wire 3, and has the second voltage end V2 between Section Point 2 and ground or negative wire 3.Ground or negative wire 3 are positioned at any electromotive force that is lower than voltage node 1 and 2.Two filter capacitors 8,11 are in parallel with the first and second voltage end V1, V2 respectively.Converter 20 comprises a pair of CMOSFET pipe (MOSFET) switch 4,5.Switch 4 is the P channel mosfet, and switch 5 is N-channel MOS FET.Switch 4 and switch 5 are connected between first node V1 and the Section Point V2, and diode 6 and diode 7 are connected between Section Point V2 and the negative wire 3, constitute the voltage-dropping type resonant switched capacitor direct current voltage converter.
Centre cap inductance 10 is connected between first and second MOSFET4,5.Resonant capacitance 9 is connected between the common node 14 of the Centroid 15 of inductance 10 and diode 6,7.Electric capacity 9 provides main energy storage device in this converter.Inductance 10 can adopt by polymer-bonded magnetic core made inductance or air core inductor and electric capacity 9 generation resonance.
Self-powered door Drive and Control Circuit 12 utilizes the voltage between node 1 and the node 2 to offer the power supply of a driving as self-starting.Self-powered door Drive and Control Circuit 12 provides switch gate signal for MOSFET4,5.DC voltage converter 20 is the step-down type dc voltage changer.Voltage V1 is an input, and V2 is at load end.Ideally, voltage V2 equals half of voltage V1.DC voltage converter is by discharging and recharging work with electric capacity 9.Thereby the electric capacity that electric capacity 9 act as with inductance 10 resonance obtains the Zero Current Switch environment for MOSFET.
Fig. 8 is the 3rd specific embodiment of the present invention.Inverse type switching capacity quasi resonant convertor 30 has the first voltage end V1 between first voltage node 1 and ground or negative wire 3, and has the second voltage end V2 between Section Point 2 and ground or negative wire 3.Ground or negative wire 3 can be any current potential that is lower than voltage node 1 and 2.Two filter capacitors 8,11 are in parallel with the first and second voltage end V1, V2 respectively.Converter 30 comprises a pair of CMOSFET pipe (MOSFET) switch 4,5.Switch 4 is the P channel mosfet, and switch 5 is N-channel MOS FET.Switch 4 and switch 5 are connected between first node 1 and the negative wire 3, and diode 6 and diode 7 are connected between Section Point V2 and the negative wire 3, constitute the inverse type resonant switched capacitor direct current voltage converter.
Centre cap inductance 10 is connected between first and second MOSFET4,5.Resonant capacitance 9 is connected between the common node 14 of the Centroid 15 of inductance 10 and diode 6,7.Electric capacity 9 provides main energy storage device in this converter.Inductance 10 can adopt by polymer-bonded magnetic core made inductance or air core inductor and electric capacity 9 generation resonance.
Self-powered door Drive and Control Circuit 12 utilizes the voltage between node 1 and the node 3 to offer the power supply of a driving as self-starting.Self-powered door Drive and Control Circuit 12 provides switch gate signal for MOSFET4,5.DC converter 30 is the inverter voltage converter.Voltage V1 is an input, and V2 is at load end.Ideally, voltage V2 equals the negative value of voltage V1.Converter is by discharging and recharging work with electric capacity 9.Thereby the electric capacity that electric capacity 9 act as with inductance 10 resonance obtains the Zero Current Switch environment for MOSFET.
More than; be for those skilled in the art understand the present invention, and to the detailed description that the present invention carried out, but can expect; in the scope that does not break away from claim of the present invention and contained, can also make other variation and modification, these variations and revising all in protection scope of the present invention.

Claims (4)

1. resonant switched capacitor direct current voltage converter, comprise first voltage node, second voltage node, first switch, second switch, first diode, second diode, control circuit, wherein, have first voltage between first voltage node and the negative wire, have second voltage between this second voltage node and the negative wire, control circuit provides switch gate signal for this first switch and second switch, it is characterized in that this resonant switched capacitor direct current voltage converter further comprises centre cap inductance and resonant capacitance, wherein, the centre cap inductance is connected between described first switch and the second switch, and resonant capacitance is connected between the Centroid of the common node of described first diode and second diode and this centre cap inductance;
This first switch and this second switch are insulated gate bipolar transistor or a pair of CMOSFET pipe switch; When wherein this first switch and this second switch were a pair of CMOSFET pipe switch, this first switch was the P-channel metal-oxide-semiconductor field effect transistor, and this second switch is a N NMOS N-channel MOS N field effect transistor;
And the annexation between switch, voltage node, diode, the negative wire is one of following three kinds:
First kind: described first switch and second switch are connected between first voltage node and the negative wire, and this first diode and this second diode are connected between this first voltage node and this second voltage node;
Second kind: described first switch and second switch are connected between this first voltage node and this second voltage node, and this first diode and this second diode are connected between this second voltage node and this negative wire;
The third: described first switch and second switch are connected between this first voltage node and this negative wire, and this first diode and this second diode are connected between this second voltage node and this negative wire.
2. DC voltage converter as claimed in claim 1 is characterized in that, described control circuit is a self-starting door Drive and Control Circuit.
3. DC voltage converter as claimed in claim 1 is characterized in that, when described annexation was second kind, described control circuit utilized the voltage between described first node and the Section Point to offer the power supply of a driving as self-starting.
4. resonant switched capacitor direct current voltage converter as claimed in claim 1, it is characterized in that, when described annexation was the third, described control circuit utilized the voltage between described first voltage node and the described negative wire to offer the power supply of a driving as self-starting.
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