CN203788130U - Enhancement-depletion-type device combination synchronization switch circuit - Google Patents
Enhancement-depletion-type device combination synchronization switch circuit Download PDFInfo
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- CN203788130U CN203788130U CN201420208118.9U CN201420208118U CN203788130U CN 203788130 U CN203788130 U CN 203788130U CN 201420208118 U CN201420208118 U CN 201420208118U CN 203788130 U CN203788130 U CN 203788130U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The utility model discloses an enhancement-depletion-type device combination synchronization switch circuit. The enhancement-depletion-type device combination synchronization comprises a N-channel depletion-type gallium nitride switch device Q1, a N-channel enhancement-type switch device Q2, a resistor R1, a polar capacitor C1 and a diode D1. The source electrode of the depletion-type gallium nitride switch device Q1 is connected with the drain electrode of the enhancement-type switch device Q2 and the negative electrode of the diode D1. The drain electrode of the depletion-type gallium nitride switch device Q1 is the output end of the switch circuit. The grid electrode of the depletion-type gallium nitride switch device Q1 is connected with one end of the resistor R1, the negative electrode of the polar capacitor C1 and the positive electrode of the diode D1. The grid electrode of the enhancement-type switch device Q2 is connected with an external PWM drive circuit, and is connected with the other end of the resistor R1 and the positive electrode of the polar capacitor C1. The source electrode of the enhancement-type switch device Q2 is connected with the reference ground in the switch circuit. The enhancement-depletion-type device combination synchronization switch circuit is simple in structure, the implementation cost is low, and the rapidity, the reliability and the practicality of turn-off of the depletion-type switch device are raised.
Description
Technical field
The utility model belongs to switching circuit technical field, specifically relates to a kind of enhancing-depletion device combination simultaneous switching circuit.
Background technology
In recent years, because semiconductor gallium nitride switching device has the performance characteristics of many excellences, as switching speed is fast, conducting internal resistance is low, withstand voltage high, thereby be subject to industry extensive concern.But be limited to current manufacturing process, gallium nitride switching device can only be made depletion type switching element.The feature of depletion type switching element is just energy conducting when its grid, voltage between source electrodes approach zero, only have when negative voltage reaches certain value between its grid, source electrode and could turn-off, this has just brought difficulty to control, if directly applied in existing Switching Power Supply or switching power converter, situation about can not turn-off will be there will be.Want the depletion type gallium nitride switching device of function admirable to be applied to existing Switching Power Supply or switching power converter, first should solve the open and close control problem of depletion type switching element.
Application number is that 201020116685.3 Chinese patent discloses a kind of enhancing-depletion device combinational that can reliable turn-off, has solved preferably the open and close control problem of depletion type switching element, and can reliable turn-off depletion type gallium nitride switching device; But depletion type switching element Q1 and N channel enhancement switching device Q2 can not turn-off simultaneously, the shutoff of depletion type switching element Q1 relies on N channel enhancement switching device Q2, thereby depletion type switching element Q1 can not be turn-offed fast; And, because the turn-off speed of this unit switch device depends on the size that flows through depletion type switching element electric current, and the size of this electric current depends on the size of Switching Power Supply load, when load is lighter, when turn-offing, just there will be the less situation of electric current that flows through depletion type switching element, make to the charging current of equivalent capacity between the leakage of enhancement mode switching device, source electrode less, thereby cause the turn-off speed of depletion type switching element slow, make the fast feature of gallium nitride device switching speed be difficult to performance.In order to address this problem, application number is that 201020130489.1 Chinese patent discloses again a kind of drive circuit that can quickly switching off depletion type switching element, not only inherited the reliability driving, and solved preferably the quick shutoff problem of depletion type gallium nitride device, but, drive circuit needs an additional power supply VCC, and need three switching devices, thereby increased the complexity of circuit, also increased the cost of circuit, and switching speed is slow, the conducting of depletion type switching element Q3 depends on P-channel enhancement type switching device Q1, the shutoff of depletion type switching element Q3 depends on N channel enhancement switching device Q2, open-minded when not accomplishing depletion type switching element Q3 and P-channel enhancement type switching device Q1, when accomplishing depletion type switching element Q3 and N channel enhancement switching device Q2, do not turn-off yet.
Utility model content
Technical problem to be solved in the utility model is for above-mentioned deficiency of the prior art, a kind of enhancing-depletion device combination simultaneous switching circuit is provided, its circuit structure is simple, realization is convenient and cost is low, rapidity, reliability and practicality that depletion type switching element turn-offs have been strengthened, practical, result of use is good, is convenient to promote the use of.
For solving the problems of the technologies described above, the technical solution adopted in the utility model is: a kind of enhancing-depletion device combination simultaneous switching circuit, it is characterized in that: comprise N channel depletion type gallium nitride switching device Q1, N channel enhancement switching device Q2, resistance R 1, polar capacitor C1 and diode D1, the source electrode of described N channel depletion type gallium nitride switching device Q1 joins with the drain electrode of N channel enhancement switching device Q2 and the negative electrode of diode D1, the output OUT that the drain electrode of described N channel depletion type gallium nitride switching device Q1 is described switching circuit, the grid of described N channel depletion type gallium nitride switching device Q1 and one end of resistance R 1, the anode of the negative pole of polar capacitor C1 and diode D1 joins, the grid of described N channel enhancement switching device Q2 and the output of outside PWM drive circuit join, and join with the other end of resistance R 1 and the positive pole of polar capacitor C1, the source electrode of described N channel enhancement switching device Q2 connects the reference ground in described switching circuit.
Above-mentioned enhancing-depletion device combination simultaneous switching circuit, it is characterized in that: comprise resistance R 2 and resistance R 3, one end of one end of described resistance R 2 and resistance R 3 all joins with the link of source electrode, the drain electrode of N channel enhancement switching device Q2 and the negative electrode of diode D1 of described N channel depletion type gallium nitride switching device Q1, the drain electrode of the other end of described resistance R 2 and described N channel depletion type gallium nitride switching device Q1 is joined, the reference ground described in another termination of described resistance R 3 in switching circuit.
Above-mentioned enhancing-depletion device combination simultaneous switching circuit, is characterized in that: the source electrode of described N channel enhancement switching device Q2 and the other end of resistance R 3 all connect the reference ground in described switching circuit by current sampling resistor Rs.
The utility model compared with prior art has the following advantages:
1, conducting simultaneously or shutoff under the control of the utility model N channel depletion type gallium nitride switching device Q1 and the N channel enhancement switching device Q2 pwm pulse signal that externally PWM drive circuit provides, wherein N channel enhancement switching device Q2 is directly controlled by pwm pulse signal and on off state, N channel depletion type gallium nitride switching device Q1 by pwm pulse signal via resistance R 1, the formed positive negative pulse stuffing voltage of RCD network that polar capacitor C1 and diode D1 form drives, the pwm pulse signal that this positive negative pulse stuffing voltage provides with outside PWM drive circuit keeps strictly synchronizeing in phase place, thereby guaranteed that N channel depletion type gallium nitride switching device Q1 and N channel enhancement switching device Q2 are in synchro switch state, due to the grid of the utility model N channel depletion type gallium nitride switching device Q1, the generation of the positive negative pulse stuffing voltage of voltage between source electrodes is that the principle of utilizing the voltage on polar capacitor C1 not suddenly change produces, therefore without additional any accessory power supply, fully simplified circuit design, circuit structure is simple, and realization is convenient and cost is low.
2, the utility model not only can solve depletion type switching element for the controllability of existing Switching Power Supply or switching power converter and turn-off fast problem, has also strengthened rapidity, reliability and practicality that depletion type switching element turn-offs simultaneously.
3, the utility model is used in combination N channel depletion type gallium nitride switching device Q1 and N channel enhancement switching device Q2, at high frequency, on high pressure resistant and low on-resistance, than single enhancement mode switching device, be better, can be applied in better in Switching Power Supply or switching power converter, practicality is stronger, result of use is better, is convenient to promote the use of.
In sum, the utility model circuit structure is simple, and realization is convenient and cost is low, has strengthened rapidity, reliability and practicality that depletion type switching element turn-offs, and practical, result of use is good, is convenient to promote the use of.
Below by drawings and Examples, the technical solution of the utility model is described in further detail.
Accompanying drawing explanation
Fig. 1 is the circuit theory diagrams of the utility model embodiment 1.
Fig. 2 is the circuit theory diagrams of the utility model embodiment 2.
Fig. 3 is the circuit theory diagrams of the utility model embodiment 3.
Fig. 4 is the circuit theory diagrams that the utility model embodiment 3 is applied to step-up DC-DC Switching Power Supply.
Description of reference numerals:
1-outside PWM drive circuit.
Embodiment
Embodiment 1
As shown in Figure 1, enhancing of the present utility model-depletion device combination simultaneous switching circuit, comprise N channel depletion type gallium nitride switching device Q1, N channel enhancement switching device Q2, resistance R 1, polar capacitor C1 and diode D1, the source electrode of described N channel depletion type gallium nitride switching device Q1 joins with the drain electrode of N channel enhancement switching device Q2 and the negative electrode of diode D1, formed connecting of N channel depletion type gallium nitride switching device Q1 and N channel enhancement switching device Q2, the output OUT that the drain electrode of described N channel depletion type gallium nitride switching device Q1 is described switching circuit, the grid of described N channel depletion type gallium nitride switching device Q1 and one end of resistance R 1, the anode of the negative pole of polar capacitor C1 and diode D1 joins, the grid of described N channel enhancement switching device Q2 and the output of outside PWM drive circuit 1 join, and join with the other end of resistance R 1 and the positive pole of polar capacitor C1, the source electrode of described N channel enhancement switching device Q2 connects the reference ground in described switching circuit.Wherein, resistance R 1, polar capacitor C1 and diode D1 have formed RCD network.During concrete enforcement, the resistance of resistance R 1 is got 500 Ω; The resistance of resistance R 1 is larger, can make the voltage on polar capacitor C1 remain stable, has played jamproof effect.
In the present embodiment, operation principle of the present utility model is: when outside PWM drive circuit 1 output high level, N channel enhancement switching device Q2 because of its grid, voltage between source electrodes be positive voltage conducting, simultaneously, the grid, voltage between source electrodes clamper that make N channel depletion type gallium nitride switching device Q1 due to the clamping action of diode D1 approximately etc. with the conduction voltage drop of diode D1 on, thereby make N channel depletion type gallium nitride switching device Q1 in conducting state; When outside PWM drive circuit 1 output low level, N channel enhancement switching device Q2 turn-offs because its grid, voltage between source electrodes are about 0, now because the voltage on polar capacitor C1 can not suddenly change, and because the value of resistance R 1 is very large, therefore electric discharge is very little in the short time that polar capacitor C1 turn-offs at pwm pulse, almost remain unchanged, thereby make grid, voltage between source electrodes moment of N channel depletion type gallium nitride switching device Q1 become negative voltage, and make that N channel depletion type gallium nitride switching device Q1 is reliable to be turn-offed fast.
By above-mentioned operation principle, can find out, the generation of the grid of N channel depletion type gallium nitride switching device Q1, the positive negative pulse stuffing voltage of voltage between source electrodes is that the principle of utilizing the voltage on polar capacitor C1 not suddenly change produces, therefore without additional any accessory power supply; And, opening of N channel depletion type gallium nitride switching device Q1 do not rely on opening and turn-offing of N channel enhancement switching device Q2 with turn-offing, N channel depletion type gallium nitride switching device Q1 can open and turn-off with N channel enhancement switching device Q2 fast, described switching circuit has not only fully been simplified circuit design, and has greatly strengthened the dependable with function of circuit.
Embodiment 2
As shown in Figure 2, the present embodiment is as different from Example 1: enhancing of the present utility model-depletion device combination simultaneous switching circuit also comprises resistance R 2 and resistance R 3, one end of one end of described resistance R 2 and resistance R 3 all joins with the link of source electrode, the drain electrode of N channel enhancement switching device Q2 and the negative electrode of diode D1 of described N channel depletion type gallium nitride switching device Q1, the drain electrode of the other end of described resistance R 2 and described N channel depletion type gallium nitride switching device Q1 is joined, the reference ground described in another termination of described resistance R 3 in switching circuit.All the other structures are all identical with embodiment 1.
In the present embodiment, the method for designing of enhancing of the present utility model-depletion device combination simultaneous switching circuit is: polar capacitor C1 and resistance R 1, resistance R 2 and the resistance R 3 of step 1, selection suitable parameters, and its detailed process is as follows:
Step 101, according to formula
choose the capacitance of polar capacitor C1, according to the capacitance of polar capacitor C1, be greater than C
q1and C
q2the principle of 2 times of the capacitance after series connection is chosen the capacitance of polar capacitor C1, in the time of can guaranteeing that so externally PWM drive circuit 1 is exported high level, and described N channel depletion type gallium nitride switching device Q1 fast conducting; Wherein, C
q1for the parasitic capacitance between described N channel depletion type gallium nitride switching device Q1 grid source electrode, C
q2parasitic capacitance for described N channel enhancement switching device Q2 drain-source interpolar; Due to C
q1and C
q2common span is 10pF～900pF, and therefore, in the present embodiment, the capacitance of the polar capacitor C1 choosing in step 101 is 1000pF.
Step 102, according to formula R1 < (1-d
max) T/3C1 chooses the resistance of resistance R 1, wherein, d
maxfor the maximum duty cycle of the pwm signal of outside PWM drive circuit 1 output, T is the cycle of the pwm signal of outside PWM drive circuit 1 output; When outside PWM drive circuit 1 output low level, resistance R 1, for polar capacitor C1 provides discharge loop, therefore requires resistance R 1 to meet formula R1C1 < (1-d
max) T/3, i.e. R1 < (1-d
max) T/3C1; And because the effect of resistance R 1 is current-limiting protection, and the supplementary load loss of resistance R 1 are the smaller the better, therefore, in the present embodiment, in step 102 according to formula R1 < (1-d
max) T/3C1 is while choosing the resistance of resistance R 1, larger its metering function of resistance of resistance R 1 is better; In the present embodiment, d
max=0.8, T=10 μ s, according to formula R1 < (1-d
max) T/3C1 calculates R1 < 667 Ω, therefore, the resistance of the resistance R 1 of choosing in step 102 is 500 Ω.
Step 103, according to formula
, formula I
r3> > I
dSSwith formula R2=R3 (V
i, max-V
r3)/V
r3choose the resistance of resistance R 2 and the resistance of resistance R 3, wherein, V
i, maxfor the maximum voltage that described switching circuit can bear, V
r3for the pressure drop in resistance R 3 and V
r3be less than the voltage of the high level of outside PWM drive circuit 1 output, I
r3for flowing through the electric current of resistance R 3, I
dSSdrain-source current for described N channel enhancement switching device Q2; In order to ensure the trouble free service of described N channel depletion type gallium nitride switching device Q1 and N channel enhancement switching device Q2, the pressure drop V in resistance R 3
r3should be less than the drain source breakdown voltage of described N channel enhancement switching device Q2, and be less than the grid source puncture voltage of described N channel depletion type gallium nitride switching device Q1; Meanwhile, when externally PWM drive circuit 1 is output as high level, open-minded in the time of described N channel depletion type gallium nitride switching device Q1 and N channel enhancement switching device Q2, the pressure drop V in resistance R 3
r3should be less than the voltage of the high level of outside PWM drive circuit 1 output, because the drain source breakdown voltage of described N channel enhancement switching device Q2 and the grid source puncture voltage of described N channel depletion type gallium nitride switching device Q1 are generally all greater than the high level of outside PWM drive circuit 1 output, as long as therefore make the pressure drop V in resistance R 3
r3be less than the voltage of the high level of outside PWM drive circuit 1 output; In the present embodiment, the voltage of the high level of step 103 peripheral PWM drive circuit 1 output is 12V, V in step 103
r3value be 8V, I in step 103
dSSvalue be 50 μ A, I in step 103
rSvalue be 500 μ A, V in step 103
i, maxvalue be 24V, the resistance of the resistance R 2 of choosing in step 103 is 32K Ω, the resistance of the resistance R 3 of choosing in step 103 is 16K Ω.
Step 2, connect described N channel depletion type gallium nitride switching device Q1, N channel enhancement switching device Q2, resistance R 1, polar capacitor C1, diode D1, resistance R 2 and resistance R 3, its detailed process is as follows:
Step 201, the source electrode that connects described N channel depletion type gallium nitride switching device Q1, the drain electrode of N channel enhancement switching device Q2, the negative electrode of diode D1 are, one end of one end of resistance R 2 and resistance R 3;
Step 202, the grid that connects described N channel depletion type gallium nitride switching device Q1 and one end of resistance R 1 are, the anode of the negative pole of polar capacitor C1 and diode D1;
Step 203, after being connected, the grid of described N channel enhancement switching device Q2, the other end of resistance R 1 and the positive pole of polar capacitor C1 be connected to the output of outside PWM drive circuit 1;
Step 204, connect the drain electrode of the other end and the described N channel depletion type gallium nitride switching device Q1 of described resistance R 2;
Step 205, the other end of the source electrode of described N channel enhancement switching device Q2 and described resistance R 3 is connected to the reference ground in described switching circuit.
In the present embodiment, operation principle of the present utility model as different from Example 1: resistance R 2 and the resistance R 3 of series connection have formed bleeder circuit, the pressure drop V in resistance R 3
r3be less than the voltage of the high level of outside PWM drive circuit 1 output, in the time of can guaranteeing that externally PWM drive circuit 1 is output as high level, open-minded in the time of described N channel depletion type gallium nitride switching device Q1 and N channel enhancement switching device Q2, and by resistance R 2 and resistance R 3, carry out dividing potential drop, guaranteed the trouble free service of described N channel depletion type gallium nitride switching device Q1 and N channel enhancement switching device Q2.All the other operation principles are all identical with embodiment 1.
Embodiment 3
As shown in Figure 3, the present embodiment as different from Example 2: the source electrode of described N channel enhancement switching device Q2 and the other end of resistance R 3 all connect the reference ground in described switching circuit by current sampling resistor Rs.All the other structures are all identical with embodiment 2.
In the present embodiment, operation principle of the present utility model is as different from Example 2: by current sampling resistor Rs, can sample to flowing through the electric current of N channel depletion type gallium nitride switching device Q1 and N channel enhancement switching device Q2, and the current signal sampling is exported to external control circuit, by external control circuit, N channel depletion type gallium nitride switching device Q1 and N channel enhancement switching device Q2 are implemented to protection, or control flowing through the electric current of N channel depletion type gallium nitride switching device Q1 and N channel enhancement switching device Q2, N channel depletion type gallium nitride switching device Q1 and N channel enhancement switching device Q2 are operated under safe current.All the other operation principles are all identical with embodiment 2.
In order to verify result of use of the present utility model, this switching circuit in the present embodiment is applied to step-up DC-DC Switching Power Supply, as shown in Figure 4, this step-up DC-DC Switching Power Supply comprises diode D2, inductance L 1, nonpolar capacitor C 2 and C5, and polar capacitor C3 and C4, one end of described nonpolar capacitor C 2, one end of the positive pole of polar capacitor C3 and inductance L 1 all joins with the positive pole of input voltage Vi, the negative pole of the other end of described nonpolar capacitor C 2 and polar capacitor C3 all connects the reference ground in described switching circuit, the anode of the other end of described inductance L 1 and diode D2 all joins with the output OUT of this switching circuit, one end of the positive pole of the negative electrode of described diode D2 and polar capacitor C4 and nonpolar capacitor C 5 joins and is the cathode output end of output voltage V o, the other end of the negative pole of described polar capacitor C4 and nonpolar capacitor C 5 all connects the reference ground in described switching circuit and is the cathode output end of output voltage V o, between the cathode output end of output voltage V o and cathode output end, be connected to load R
l.
The operation principle of this step-up DC-DC Switching Power Supply is: when outside PWM drive circuit 1 output high level, N channel enhancement switching device Q2 because of its grid, voltage between source electrodes be positive voltage conducting, simultaneously, the grid, voltage between source electrodes clamper that make N channel depletion type gallium nitride switching device Q1 due to the clamping action of diode D1 approximately etc. with the conduction voltage drop of diode D1 on, thereby make N channel depletion type gallium nitride switching device Q1 in conducting state, the pressure drop V in resistance R 3
r3be less than the voltage of the high level of outside PWM drive circuit 1 output, in the time of can guaranteeing that externally PWM drive circuit 1 is output as high level, open-minded in the time of described N channel depletion type gallium nitride switching device Q1 and N channel enhancement switching device Q2, now, diode D2 turn-offs because bearing reverse voltage, and electric current flows through inductance L 1, electric current is linear to be increased, electric energy is stored in inductance L 1 with magnetic energy form, and polar capacitor C4 electric discharge, to load R
lpower supply, when outside PWM drive circuit 1 output low level, N channel enhancement switching device Q2 is because of its grid, voltage between source electrodes is about 0 and turn-off, now because the voltage on polar capacitor C1 can not suddenly change, and because the value of resistance R 1 is very large, therefore electric discharge is very little in the short time that polar capacitor C1 turn-offs at pwm pulse, almost remain unchanged, thereby make the grid of N channel depletion type gallium nitride switching device Q1, voltage between source electrodes moment becomes negative voltage, and N channel depletion type gallium nitride switching device Q1 is reliably turn-offed fast, now, electric current in inductance L 1 can not suddenly change, force diode D2 conducting afterflow, inductance L and input voltage Vi are simultaneously to polar capacitor C4 and load R like this
lcharging, by resistance R 2 and resistance R 3, carry out dividing potential drop, guaranteed the trouble free service of described N channel depletion type gallium nitride switching device Q1 and N channel enhancement switching device Q2.In addition, the nonpolar capacitor C 2 in circuit and polar capacitor C3, for input voltage Vi is carried out to filtering, make input voltage Vi more stable, and nonpolar capacitor C 5 is for carrying out filtering to output voltage V o.
Above confirmatory experiment shows, the N channel depletion type gallium nitride switching device Q1 in the utility model can open simultaneously and turn-off with N channel enhancement switching device Q2, has realized opening fast and quick shutoff of N channel depletion type gallium nitride switching device Q1; The utility model not only can make step-up DC-DC Switching Power Supply normally work, and switch performance is superior, and functional reliability is high, and the utility model has strengthened the practicality of N channel depletion type gallium nitride switching device greatly.
The above; it is only preferred embodiment of the present utility model; not the utility model is imposed any restrictions; every any simple modification of above embodiment being done according to the utility model technical spirit, change and equivalent structure change, and all still belong in the protection range of technical solutions of the utility model.
Claims (3)
1. an enhancing-depletion device combines simultaneous switching circuit, it is characterized in that: comprise N channel depletion type gallium nitride switching device Q1, N channel enhancement switching device Q2, resistance R 1, polar capacitor C1 and diode D1, the source electrode of described N channel depletion type gallium nitride switching device Q1 joins with the drain electrode of N channel enhancement switching device Q2 and the negative electrode of diode D1, the output OUT that the drain electrode of described N channel depletion type gallium nitride switching device Q1 is described switching circuit, the grid of described N channel depletion type gallium nitride switching device Q1 and one end of resistance R 1, the anode of the negative pole of polar capacitor C1 and diode D1 joins, the grid of described N channel enhancement switching device Q2 and the output of outside PWM drive circuit (1) join, and join with the other end of resistance R 1 and the positive pole of polar capacitor C1, the source electrode of described N channel enhancement switching device Q2 connects the reference ground in described switching circuit.
2. according to enhancing claimed in claim 1-depletion device combination simultaneous switching circuit, it is characterized in that: comprise resistance R 2 and resistance R 3, one end of one end of described resistance R 2 and resistance R 3 all joins with the link of source electrode, the drain electrode of N channel enhancement switching device Q2 and the negative electrode of diode D1 of described N channel depletion type gallium nitride switching device Q1, the drain electrode of the other end of described resistance R 2 and described N channel depletion type gallium nitride switching device Q1 is joined, the reference ground described in another termination of described resistance R 3 in switching circuit.
3. according to enhancing claimed in claim 2-depletion device combination simultaneous switching circuit, it is characterized in that: the source electrode of described N channel enhancement switching device Q2 and the other end of resistance R 3 all connect the reference ground in described switching circuit by current sampling resistor Rs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420208118.9U CN203788130U (en) | 2014-04-25 | 2014-04-25 | Enhancement-depletion-type device combination synchronization switch circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420208118.9U CN203788130U (en) | 2014-04-25 | 2014-04-25 | Enhancement-depletion-type device combination synchronization switch circuit |
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| CN203788130U true CN203788130U (en) | 2014-08-20 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103915991A (en) * | 2014-04-25 | 2014-07-09 | 西安科技大学 | Switching circuit of depletion type component with RCD network and design method thereof |
| CN104616939A (en) * | 2015-02-06 | 2015-05-13 | 孙毅彪 | Non-arc intelligent bridge strong-controlled type high-voltage circuit breaker |
| CN112466242A (en) * | 2019-09-06 | 2021-03-09 | 深圳芯能半导体技术有限公司 | Grid driving device based on single output channel driving IC |
| CN113054969A (en) * | 2021-03-09 | 2021-06-29 | 南京大学 | Gallium nitride triode grid driving circuit and control method thereof |
-
2014
- 2014-04-25 CN CN201420208118.9U patent/CN203788130U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103915991A (en) * | 2014-04-25 | 2014-07-09 | 西安科技大学 | Switching circuit of depletion type component with RCD network and design method thereof |
| CN103915991B (en) * | 2014-04-25 | 2017-02-01 | 西安科技大学 | Design method of switching circuit of depletion type component with RCD network |
| CN104616939A (en) * | 2015-02-06 | 2015-05-13 | 孙毅彪 | Non-arc intelligent bridge strong-controlled type high-voltage circuit breaker |
| CN112466242A (en) * | 2019-09-06 | 2021-03-09 | 深圳芯能半导体技术有限公司 | Grid driving device based on single output channel driving IC |
| CN113054969A (en) * | 2021-03-09 | 2021-06-29 | 南京大学 | Gallium nitride triode grid driving circuit and control method thereof |
| CN113054969B (en) * | 2021-03-09 | 2023-11-17 | 南京大学 | Gate driving circuit of gallium nitride triode and control method thereof |
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