CN103915991A - Switching circuit of depletion type component with RCD network and design method thereof - Google Patents
Switching circuit of depletion type component with RCD network and design method thereof Download PDFInfo
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- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The invention discloses a switching circuit of a depletion type component with an RCD network. The switching circuit comprises an N channel depletion type gallium nitride switch component Q1, an N channel enhancement type switch component Q2, a resistor R1, a polar capacitor C1 and a diode D1. A source electrode of the depletion type gallium nitride switch component Q1 is connected with a leakage electrode of the enhancement type switch component Q2 and a cathode of the diode D1, and a grid electrode of the depletion type gallium nitride switch component Q1 is connected with one end of the resistor R1, a negative electrode of the polar capacitor C1 and an anode of the diode D1. A grid electrode of the enhancement type switch component Q2 is connected with an external PWM drive circuit and connected with the other end of the resistor R1 and a positive electrode of the polar capacitor C1. A source electrode of the enhancement type switch component Q2 is connected with a reference ground in the switch circuit. The invention further discloses a design method of the switch circuit of the depletion component with the RCD network. Rapidness, reliability and practicability of turnoff of the depletion switch component are improved.
Description
Technical field
The invention belongs to switching circuit technical field, specifically relate to a kind of switching circuit and method for designing thereof of depletion device of the RCD of having network.
Background technology
In recent years, because semiconductor gallium nitride switching device has the performance characteristics of many excellences, as switching speed is fast, conducting internal resistance is low, withstand voltage high, thereby be subject to industry extensive concern.But be limited to current manufacturing process, gallium nitride switching device can only be made depletion type switching element.The feature of depletion type switching element is to approach at 1 o'clock with regard to energy conducting at its grid, voltage between source electrodes, only have in the time that negative voltage reaches certain value between its grid, source electrode and could turn-off, this has just brought difficulty to control, if directly applied in existing Switching Power Supply or switching power converter, situation about can not turn-off will be there will be.Want the depletion type gallium nitride switching device of function admirable to be applied to existing Switching Power Supply or switching power converter, first should solve the open and close control problem of depletion type switching element.
Application number is that 201020116685.3 Chinese patent discloses a kind of enhancing-depletion device combinational that can reliable turn-off, has solved preferably the open and close control problem of depletion type switching element, and can reliable turn-off depletion type gallium nitride switching device; But depletion type switching element Q1 and N channel enhancement switching device Q2 can not turn-off simultaneously, the shutoff of depletion type switching element Q1 relies on N channel enhancement switching device Q2, thereby depletion type switching element Q1 can not be turn-offed fast; And, because the turn-off speed of this unit switch device depends on the size that flows through depletion type switching element electric current, and the size of this electric current depends on the size of Switching Power Supply load, in the time that load is lighter, in the time turn-offing, just there will be the less situation of electric current that flows through depletion type switching element, make to the charging current of equivalent capacity between the leakage of enhancement mode switching device, source electrode less, thereby cause the turn-off speed of depletion type switching element slow, make the fast feature of gallium nitride device switching speed be difficult to performance.In order to address this problem, application number is that 201020130489.1 Chinese patent discloses again a kind of drive circuit that can quickly switching off depletion type switching element, not only inherit the reliability driving, and solve preferably the quick shutoff problem of depletion type gallium nitride device, but, drive circuit needs an additional power supply VCC, and need three switching devices, thereby increase the complexity of circuit, also increased the cost of circuit, and switching speed is slow, the conducting of depletion type switching element Q3 depends on P-channel enhancement type switching device Q1, the shutoff of depletion type switching element Q3 depends on N channel enhancement switching device Q2, open-minded when not accomplishing depletion type switching element Q3 and P-channel enhancement type switching device Q1, also when not accomplishing depletion type switching element Q3 and N channel enhancement switching device Q2, turn-off.
Summary of the invention
Technical problem to be solved by this invention is for above-mentioned deficiency of the prior art, a kind of switching circuit of depletion device of the RCD of having network is provided, its circuit structure is simple, realization is convenient and cost is low, rapidity, reliability and practicality that depletion type switching element turn-offs are strengthened, practical, result of use is good, is convenient to promote the use of.
For solving the problems of the technologies described above, the technical solution used in the present invention is: a kind of switching circuit of the depletion device with RCD network, it is characterized in that: comprise N channel depletion type gallium nitride switching device Q1, N channel enhancement switching device Q2, resistance R 1, polar capacitor C1 and diode D1, the source electrode of described N channel depletion type gallium nitride switching device Q1 joins with the drain electrode of N channel enhancement switching device Q2 and the negative electrode of diode D1, the output OUT that the drain electrode of described N channel depletion type gallium nitride switching device Q1 is described switching circuit, the grid of described N channel depletion type gallium nitride switching device Q1 and one end of resistance R 1, the anode of the negative pole of polar capacitor C1 and diode D1 joins, the grid of described N channel enhancement switching device Q2 and the output of outside PWM drive circuit join, and join with the other end of resistance R 1 and the positive pole of polar capacitor C1, the source electrode of described N channel enhancement switching device Q2 connects the reference ground in described switching circuit.
The switching circuit of the above-mentioned depletion device with RCD network, it is characterized in that: comprise resistance R 2 and resistance R 3, one end of one end of described resistance R 2 and resistance R 3 all joins with the link of source electrode, the drain electrode of N channel enhancement switching device Q2 and the negative electrode of diode D1 of described N channel depletion type gallium nitride switching device Q1, the drain electrode of the other end of described resistance R 2 and described N channel depletion type gallium nitride switching device Q1 is joined, the reference ground described in another termination of described resistance R 3 in switching circuit.
The switching circuit of the above-mentioned depletion device with RCD network, is characterized in that: the source electrode of described N channel enhancement switching device Q2 and the other end of resistance R 3 all connect the reference ground in described switching circuit by current sampling resistor Rs.
The present invention also provides the method for designing of the switching circuit of the depletion device with RCD network that a kind of method step is simple, reliability is high, practical, it is characterized in that the method comprises the following steps:
Polar capacitor C1 and resistance R 1, resistance R 2 and the resistance R 3 of step 1, selection proper parameter, detailed process is as follows:
Step 101, according to formula
choose the capacitance of polar capacitor C1, wherein, C
q1for the parasitic capacitance between described N channel depletion type gallium nitride switching device Q1 grid source electrode, C
q2for the parasitic capacitance of described N channel enhancement switching device Q2 drain-source interpolar;
Step 102, according to formula R1< (1-d
max) T/3C1 chooses the resistance of resistance R 1, wherein, d
maxfor the maximum duty cycle of the pwm signal of outside PWM drive circuit output, T is the cycle of the pwm signal of outside PWM drive circuit output;
Step 103, according to formula
formula I
r3>>I
dSSwith formula R2=R3 (V
i, max-V
r3)/V
r3choose the resistance of resistance R 2 and the resistance of resistance R 3, wherein, V
i, maxfor the maximum voltage that described switching circuit can bear, V
r3for the pressure drop in resistance R 3 and V
r3be less than the voltage of the high level of outside PWM drive circuit output, I
r3for flowing through the electric current of resistance R 3, I
dSSfor the drain-source current of described N channel enhancement switching device Q2;
Step 2, connect described N channel depletion type gallium nitride switching device Q1, N channel enhancement switching device Q2, resistance R 1, polar capacitor C1, diode D1, resistance R 2 and resistance R 3, detailed process is as follows:
The drain electrode of step 201, the source electrode that connects described N channel depletion type gallium nitride switching device Q1, N channel enhancement switching device Q2, negative electrode, one end of resistance R 2 and one end of resistance R 3 of diode D1;
Step 202, connect the grid of described N channel depletion type gallium nitride switching device Q1 and one end, the negative pole of polar capacitor C1 and the anode of diode D1 of resistance R 1;
Step 203, after being connected with the positive pole of polar capacitor C1, the other end of the grid of described N channel enhancement switching device Q2, resistance R 1 is connected to the output of outside PWM drive circuit;
Step 204, connect the drain electrode of the other end and the described N channel depletion type gallium nitride switching device Q1 of described resistance R 2;
Step 205, the other end of the source electrode of described N channel enhancement switching device Q2 and described resistance R 3 is connected to the reference ground in described switching circuit.
Above-mentioned method, is characterized in that: the capacitance of the polar capacitor C1 choosing in step 101 is 1000pF.
Above-mentioned method, is characterized in that: in step 102 according to formula R1< (1-d
max) T/3C1 is while choosing the resistance of resistance R 1, larger its metering function of resistance of resistance R 1 is better.
Above-mentioned method, is characterized in that: the resistance of the resistance R 1 of choosing in step 102 is 500 Ω.
Above-mentioned method, is characterized in that: the voltage of the high level of step 103 peripheral PWM drive circuit output is 12V, V in step 103
r3value be 8V, I in step 103
dSSvalue be 50 μ A, I in step 103
rSvalue be 500 μ A, V in step 103
i,
maxvalue be 24V, the resistance of the resistance R 2 of choosing in step 103 is 32K Ω, the resistance of the resistance R 3 of choosing in step 103 is 16K Ω.
The present invention compared with prior art has the following advantages:
1, conducting simultaneously or shutoff under the control of the pwm pulse signal that N channel depletion type gallium nitride switching device Q1 of the present invention and N channel enhancement switching device Q2 provide at outside PWM drive circuit, wherein N channel enhancement switching device Q2 directly by pwm pulse signal control on off state, N channel depletion type gallium nitride switching device Q1 by pwm pulse signal via resistance R 1, the positive negative pulse stuffing voltage that the RCD network that polar capacitor C1 and diode D1 form forms drives, the pwm pulse signal that this positive negative pulse stuffing voltage provides with outside PWM drive circuit keeps strictly synchronizeing in phase place, thereby guarantee that N channel depletion type gallium nitride switching device Q1 and N channel enhancement switching device Q2 are in synchro switch state, because the generation of the positive negative pulse stuffing voltage of the grid of N channel depletion type gallium nitride switching device Q1 of the present invention, voltage between source electrodes is that the principle of utilizing the voltage on polar capacitor C1 not suddenly change produces, therefore without additional any accessory power supply, fully simplify circuit design, circuit structure is simple, and realization is convenient and cost is low.
2, the present invention not only can solve depletion type switching element for the controllability of existing Switching Power Supply or switching power converter and turn-off fast problem, has also strengthened rapidity, reliability and practicality that depletion type switching element turn-offs simultaneously.
3, the present invention is used in combination N channel depletion type gallium nitride switching device Q1 and N channel enhancement switching device Q2, at high frequency, on high pressure resistant and low on-resistance, be better than single enhancement mode switching device, can be applied in better in Switching Power Supply or switching power converter, practicality is stronger, result of use is better, is convenient to promote the use of.
In sum, circuit structure of the present invention is simple, and realization is convenient and cost is low, has strengthened rapidity, reliability and practicality that depletion type switching element turn-offs, and practical, result of use is good, is convenient to promote the use of.
Below by drawings and Examples, technical scheme of the present invention is described in further detail.
Accompanying drawing explanation
Fig. 1 is the circuit theory diagrams of the embodiment of the present invention 1.
Fig. 2 is the circuit theory diagrams of the embodiment of the present invention 2.
Fig. 3 is the circuit theory diagrams of the embodiment of the present invention 3.
Fig. 4 is the circuit theory diagrams that the embodiment of the present invention 3 is applied to step-up DC-DC Switching Power Supply.
Description of reference numerals:
1-outside PWM drive circuit.
Embodiment
Embodiment 1
As shown in Figure 1, the switching circuit of the depletion device with RCD network of the present invention, comprise N channel depletion type gallium nitride switching device Q1, N channel enhancement switching device Q2, resistance R 1, polar capacitor C1 and diode D1, the source electrode of described N channel depletion type gallium nitride switching device Q1 joins with the drain electrode of N channel enhancement switching device Q2 and the negative electrode of diode D1, form connecting of N channel depletion type gallium nitride switching device Q1 and N channel enhancement switching device Q2, the output OUT that the drain electrode of described N channel depletion type gallium nitride switching device Q1 is described switching circuit, the grid of described N channel depletion type gallium nitride switching device Q1 and one end of resistance R 1, the anode of the negative pole of polar capacitor C1 and diode D1 joins, the grid of described N channel enhancement switching device Q2 and the output of outside PWM drive circuit 1 join, and join with the other end of resistance R 1 and the positive pole of polar capacitor C1, the source electrode of described N channel enhancement switching device Q2 connects the reference ground in described switching circuit.Wherein, resistance R 1, polar capacitor C1 and diode D1 have formed RCD network.When concrete enforcement, the resistance of resistance R 1 is got 500 Ω; The resistance of resistance R 1 is larger, can make the voltage on polar capacitor C1 remain stable, has played jamproof effect.
In the present embodiment, operation principle of the present invention is: in the time that outside PWM drive circuit 1 is exported high level, N channel enhancement switching device Q2 because of its grid, voltage between source electrodes be positive voltage conducting, simultaneously, the grid, voltage between source electrodes clamper that make N channel depletion type gallium nitride switching device Q1 due to the clamping action of diode D1 approximately etc. with the conduction voltage drop of diode D1 on, thereby make N channel depletion type gallium nitride switching device Q1 in conducting state; In the time of outside PWM drive circuit 1 output low level, N channel enhancement switching device Q2 turn-offs because its grid, voltage between source electrodes are about 0, now because the voltage on polar capacitor C1 can not suddenly change, and because the value of resistance R 1 is very large, therefore electric discharge is very little in the short time that polar capacitor C1 turn-offs at pwm pulse, almost remain unchanged, thereby make grid, the voltage between source electrodes moment of N channel depletion type gallium nitride switching device Q1 become negative voltage, and make the reliable shutoff fast of N channel depletion type gallium nitride switching device Q1.
Can find out by above-mentioned operation principle, the generation of the grid of N channel depletion type gallium nitride switching device Q1, the positive negative pulse stuffing voltage of voltage between source electrodes is that the principle of utilizing the voltage on polar capacitor C1 not suddenly change produces, therefore without additional any accessory power supply; And, opening of N channel depletion type gallium nitride switching device Q1 do not rely on opening and turn-offing of N channel enhancement switching device Q2 with turn-offing, N channel depletion type gallium nitride switching device Q1 can open and turn-off with N channel enhancement switching device Q2 fast, described switching circuit has not only fully been simplified circuit design, and has greatly strengthened the dependable with function of circuit.
Embodiment 2
As shown in Figure 2, the present embodiment is as different from Example 1: the switching circuit of the depletion device of the RCD of having network of the present invention also comprises resistance R 2 and resistance R 3, one end of one end of described resistance R 2 and resistance R 3 all joins with the link of source electrode, the drain electrode of N channel enhancement switching device Q2 and the negative electrode of diode D1 of described N channel depletion type gallium nitride switching device Q1, the drain electrode of the other end of described resistance R 2 and described N channel depletion type gallium nitride switching device Q1 is joined, the reference ground described in another termination of described resistance R 3 in switching circuit.All the other structures are all identical with embodiment 1.
In the present embodiment, the method for designing of the switching circuit of the depletion device of the RCD of having network of the present invention is: polar capacitor C1 and resistance R 1, resistance R 2 and the resistance R 3 of step 1, selection proper parameter, and its detailed process is as follows:
Step 101, according to formula
choose the capacitance of polar capacitor C1, be greater than C according to the capacitance of polar capacitor C1
q1and C
q2the principle of 2 times of the capacitance after series connection is chosen the capacitance of polar capacitor C1, can guarantee like this in the time that outside PWM drive circuit 1 is exported high level, described N channel depletion type gallium nitride switching device Q1 fast conducting; Wherein, C
q1for the parasitic capacitance between described N channel depletion type gallium nitride switching device Q1 grid source electrode, C
q2for the parasitic capacitance of described N channel enhancement switching device Q2 drain-source interpolar; Due to C
q1and C
q2common span is 10pF～900pF, and therefore, in the present embodiment, the capacitance of the polar capacitor C1 choosing in step 101 is 1000pF.
Step 102, according to formula R1< (1-d
max) T/3C1 chooses the resistance of resistance R 1, wherein, d
maxthe maximum duty cycle of the pwm signal of exporting for outside PWM drive circuit 1, T is the cycle of the pwm signal exported of outside PWM drive circuit 1; In the time of outside PWM drive circuit 1 output low level, resistance R 1, for polar capacitor C1 provides discharge loop, therefore requires resistance R 1 to meet formula R1C1< (1-d
max) T/3, i.e. R1< (1-d
max) T/3C1; And because the effect of resistance R 1 is current-limiting protection, and the supplementary load loss of resistance R 1 are the smaller the better, therefore, in the present embodiment, in step 102 according to formula R1< (1-d
max) T/3C1 is while choosing the resistance of resistance R 1, larger its metering function of resistance of resistance R 1 is better; In the present embodiment, d
max=0.8, T=10 μ s, according to formula R1< (1-d
max) T/3C1 calculates R1<667 Ω, therefore, the resistance of the resistance R 1 of choosing in step 102 is 500 Ω.
Step 103, according to formula
formula I
r3>>I
dSSwith formula R2=R3 (V
i, max-V
r3)/V
r3choose the resistance of resistance R 2 and the resistance of resistance R 3, wherein, V
i, maxfor the maximum voltage that described switching circuit can bear, V
r3for the pressure drop in resistance R 3 and V
r3be less than the voltage of the high level that outside PWM drive circuit 1 exports, I
r3for flowing through the electric current of resistance R 3, I
dSSfor the drain-source current of described N channel enhancement switching device Q2; In order to ensure the trouble free service of described N channel depletion type gallium nitride switching device Q1 and N channel enhancement switching device Q2, the pressure drop V in resistance R 3
r3should be less than the drain source breakdown voltage of described N channel enhancement switching device Q2, and be less than the grid source puncture voltage of described N channel depletion type gallium nitride switching device Q1; Meanwhile, in order to ensure in the time that outside PWM drive circuit 1 is output as high level, open-minded when described N channel depletion type gallium nitride switching device Q1 and N channel enhancement switching device Q2, the pressure drop V in resistance R 3
r3should be less than the voltage of the high level that outside PWM drive circuit 1 exports, because the drain source breakdown voltage of described N channel enhancement switching device Q2 and the grid source puncture voltage of described N channel depletion type gallium nitride switching device Q1 are generally all greater than the high level that outside PWM drive circuit 1 is exported, as long as therefore make the pressure drop V in resistance R 3
r3be less than the voltage of the high level that outside PWM drive circuit 1 exports; In the present embodiment, the voltage of the high level that step 103 peripheral PWM drive circuit 1 is exported is 12V, V in step 103
r3value be 8V, I in step 103
dSSvalue be 50 μ A, I in step 103
rSvalue be 500 μ A, V in step 103
i, maxvalue be 24V, the resistance of the resistance R 2 of choosing in step 103 is 32K Ω, the resistance of the resistance R 3 of choosing in step 103 is 16K Ω.
Step 2, connect described N channel depletion type gallium nitride switching device Q1, N channel enhancement switching device Q2, resistance R 1, polar capacitor C1, diode D1, resistance R 2 and resistance R 3, its detailed process is as follows:
The drain electrode of step 201, the source electrode that connects described N channel depletion type gallium nitride switching device Q1, N channel enhancement switching device Q2, negative electrode, one end of resistance R 2 and one end of resistance R 3 of diode D1;
Step 202, connect the grid of described N channel depletion type gallium nitride switching device Q1 and one end, the negative pole of polar capacitor C1 and the anode of diode D1 of resistance R 1;
Step 203, after being connected with the positive pole of polar capacitor C1, the other end of the grid of described N channel enhancement switching device Q2, resistance R 1 is connected to the output of outside PWM drive circuit 1;
Step 204, connect the drain electrode of the other end and the described N channel depletion type gallium nitride switching device Q1 of described resistance R 2;
Step 205, the other end of the source electrode of described N channel enhancement switching device Q2 and described resistance R 3 is connected to the reference ground in described switching circuit.
In the present embodiment, operation principle of the present invention as different from Example 1: resistance R 2 and the resistance R 3 of series connection have formed bleeder circuit, the pressure drop V in resistance R 3
r3be less than the voltage of the high level that outside PWM drive circuit 1 exports, can guarantee in the time that outside PWM drive circuit 1 is output as high level, open-minded when described N channel depletion type gallium nitride switching device Q1 and N channel enhancement switching device Q2, and carry out dividing potential drop by resistance R 2 and resistance R 3, guaranteed the trouble free service of described N channel depletion type gallium nitride switching device Q1 and N channel enhancement switching device Q2.All the other operation principles are all identical with embodiment 1.
Embodiment 3
As shown in Figure 3, the present embodiment as different from Example 2: the source electrode of described N channel enhancement switching device Q2 and the other end of resistance R 3 all connect the reference ground in described switching circuit by current sampling resistor Rs.All the other structures are all identical with embodiment 2.
In the present embodiment, operation principle of the present invention is as different from Example 2: can sample to the electric current that flows through N channel depletion type gallium nitride switching device Q1 and N channel enhancement switching device Q2 by current sampling resistor Rs, and the current signal sampling is exported to external control circuit, by external control circuit, N channel depletion type gallium nitride switching device Q1 and N channel enhancement switching device Q2 are implemented to protection, or the electric current that flows through N channel depletion type gallium nitride switching device Q1 and N channel enhancement switching device Q2 is controlled, N channel depletion type gallium nitride switching device Q1 and N channel enhancement switching device Q2 are operated under safe current.All the other operation principles are all identical with embodiment 2.
In order to verify result of use of the present invention, this switching circuit in the present embodiment is applied to step-up DC-DC Switching Power Supply, as shown in Figure 4, this step-up DC-DC Switching Power Supply comprises diode D2, inductance L 1, nonpolar capacitor C 2 and C5, and polar capacitor C3 and C4, one end of described nonpolar capacitor C 2, one end of the positive pole of polar capacitor C3 and inductance L 1 all joins with the positive pole of input voltage Vi, the negative pole of the other end of described nonpolar capacitor C 2 and polar capacitor C3 all connects the reference ground in described switching circuit, the anode of the other end of described inductance L 1 and diode D2 all joins with the output OUT of this switching circuit, one end of the positive pole of the negative electrode of described diode D2 and polar capacitor C4 and nonpolar capacitor C 5 joins and is the cathode output end of output voltage V o, the other end of the negative pole of described polar capacitor C4 and nonpolar capacitor C 5 all connects the reference ground in described switching circuit and is the cathode output end of output voltage V o, between the cathode output end of output voltage V o and cathode output end, be connected to load R
l.
The operation principle of this step-up DC-DC Switching Power Supply is: in the time that outside PWM drive circuit 1 is exported high level, N channel enhancement switching device Q2 because of its grid, voltage between source electrodes be positive voltage conducting, simultaneously, the grid, voltage between source electrodes clamper that make N channel depletion type gallium nitride switching device Q1 due to the clamping action of diode D1 approximately etc. with the conduction voltage drop of diode D1 on, thereby make N channel depletion type gallium nitride switching device Q1 in conducting state, the pressure drop V in resistance R 3
r3be less than the voltage of the high level that outside PWM drive circuit 1 exports, can guarantee in the time that outside PWM drive circuit 1 is output as high level, open-minded when described N channel depletion type gallium nitride switching device Q1 and N channel enhancement switching device Q2, now, diode D2 turn-offs because bearing reverse voltage, and electric current flows through inductance L 1, electric current is linear to be increased, electric energy is stored in inductance L 1 with magnetic energy form, and polar capacitor C4 electric discharge, to load R
lpower supply, in the time of outside PWM drive circuit 1 output low level, N channel enhancement switching device Q2 is because of its grid, voltage between source electrodes is about 0 and turn-off, now because the voltage on polar capacitor C1 can not suddenly change, and because the value of resistance R 1 is very large, therefore electric discharge is very little in the short time that polar capacitor C1 turn-offs at pwm pulse, almost remain unchanged, thereby make the grid of N channel depletion type gallium nitride switching device Q1, voltage between source electrodes moment becomes negative voltage, and N channel depletion type gallium nitride switching device Q1 is reliably turn-offed fast, now, electric current in inductance L 1 can not suddenly change, force diode D2 conducting afterflow, inductance L and input voltage Vi are simultaneously to polar capacitor C4 and load R like this
lcharging, carry out dividing potential drop by resistance R 2 and resistance R 3, guaranteed the trouble free service of described N channel depletion type gallium nitride switching device Q1 and N channel enhancement switching device Q2.In addition, the nonpolar capacitor C 2 in circuit and polar capacitor C3, for input voltage Vi is carried out to filtering, make input voltage Vi more stable, and nonpolar capacitor C 5 is for carrying out filtering to output voltage V o.
Above confirmatory experiment shows, the N channel depletion type gallium nitride switching device Q1 in the present invention can open simultaneously and turn-off with N channel enhancement switching device Q2, has realized opening fast and quick shutoff of N channel depletion type gallium nitride switching device Q1; The present invention not only can make step-up DC-DC Switching Power Supply normally work, and switch performance is superior, and functional reliability is high, and the present invention has strengthened the practicality of N channel depletion type gallium nitride switching device greatly.
The above; it is only preferred embodiment of the present invention; not the present invention is imposed any restrictions, every any simple modification of above embodiment being done according to the technology of the present invention essence, change and equivalent structure change, and all still belong in the protection range of technical solution of the present invention.
Claims (8)
1. one kind has the switching circuit of the depletion device of RCD network, it is characterized in that: comprise N channel depletion type gallium nitride switching device Q1, N channel enhancement switching device Q2, resistance R 1, polar capacitor C1 and diode D1, the source electrode of described N channel depletion type gallium nitride switching device Q1 joins with the drain electrode of N channel enhancement switching device Q2 and the negative electrode of diode D1, the output OUT that the drain electrode of described N channel depletion type gallium nitride switching device Q1 is described switching circuit, the grid of described N channel depletion type gallium nitride switching device Q1 and one end of resistance R 1, the anode of the negative pole of polar capacitor C1 and diode D1 joins, the grid of described N channel enhancement switching device Q2 and the output of outside PWM drive circuit (1) join, and join with the other end of resistance R 1 and the positive pole of polar capacitor C1, the source electrode of described N channel enhancement switching device Q2 connects the reference ground in described switching circuit.
2. according to the switching circuit of the depletion device with RCD network claimed in claim 1, it is characterized in that: comprise resistance R 2 and resistance R 3, one end of one end of described resistance R 2 and resistance R 3 all joins with the link of source electrode, the drain electrode of N channel enhancement switching device Q2 and the negative electrode of diode D1 of described N channel depletion type gallium nitride switching device Q1, the drain electrode of the other end of described resistance R 2 and described N channel depletion type gallium nitride switching device Q1 is joined, the reference ground described in another termination of described resistance R 3 in switching circuit.
3. according to the switching circuit of the depletion device with RCD network claimed in claim 2, it is characterized in that: the source electrode of described N channel enhancement switching device Q2 and the other end of resistance R 3 all connect the reference ground in described switching circuit by current sampling resistor Rs.
4. design a method for switching circuit as claimed in claim 2, it is characterized in that the method comprises the following steps:
Polar capacitor C1 and resistance R 1, resistance R 2 and the resistance R 3 of step 1, selection proper parameter, detailed process is as follows:
Step 101, according to formula
choose the capacitance of polar capacitor C1, wherein, C
q1for the parasitic capacitance between described N channel depletion type gallium nitride switching device Q1 grid source electrode, C
q2for the parasitic capacitance of described N channel enhancement switching device Q2 drain-source interpolar;
Step 102, according to formula R1< (1-d
max) T/3C1 chooses the resistance of resistance R 1, wherein, d
maxfor the maximum duty cycle of the pwm signal of outside PWM drive circuit (1) output, T is the cycle of the pwm signal of outside PWM drive circuit (1) output;
Step 103, according to formula
formula I
r3>>I
dSs and formula R2=R3 (V
i, max-V
r3)/V
r3choose the resistance of resistance R 2 and the resistance of resistance R 3, wherein, V
i, maxfor the maximum voltage that described switching circuit can bear, V
r3for the pressure drop in resistance R 3 and V
r3be less than the voltage of the high level of outside PWM drive circuit (1) output, I
r3for flowing through the electric current of resistance R 3, I
dSSfor the drain-source current of described N channel enhancement switching device Q2;
Step 2, connect described N channel depletion type gallium nitride switching device Q1, N channel enhancement switching device Q2, resistance R 1, polar capacitor C1, diode D1, resistance R 2 and resistance R 3, detailed process is as follows:
The drain electrode of step 201, the source electrode that connects described N channel depletion type gallium nitride switching device Q1, N channel enhancement switching device Q2, negative electrode, one end of resistance R 2 and one end of resistance R 3 of diode D1;
Step 202, connect the grid of described N channel depletion type gallium nitride switching device Q1 and one end, the negative pole of polar capacitor C1 and the anode of diode D1 of resistance R 1;
Step 203, after being connected with the positive pole of polar capacitor C1, the other end of the grid of described N channel enhancement switching device Q2, resistance R 1 is connected to the output of outside PWM drive circuit (1);
Step 204, connect the drain electrode of the other end and the described N channel depletion type gallium nitride switching device Q1 of described resistance R 2;
Step 205, the other end of the source electrode of described N channel enhancement switching device Q2 and described resistance R 3 is connected to the reference ground in described switching circuit.
5. it is characterized in that in accordance with the method for claim 4: the capacitance of the polar capacitor C1 choosing in step 101 is 1000pF.
6. it is characterized in that in accordance with the method for claim 4: in step 102 according to formula R1< (1-d
max) T/3C1 is while choosing the resistance of resistance R 1, larger its metering function of resistance of resistance R 1 is better.
7. it is characterized in that in accordance with the method for claim 6: the resistance of the resistance R 1 of choosing in step 102 is 500 Ω.
8. in accordance with the method for claim 4, it is characterized in that: the voltage of the high level of step 103 peripheral PWM drive circuit (1) output is 12V, V in step 103
r3value be 8V, I in step 103
dSSvalue be 50 μ A, I in step 103
rSvalue be 500 μ A, V in step 103
i, maxvalue be 24V, the resistance of the resistance R 2 of choosing in step 103 is 32K Ω, the resistance of the resistance R 3 of choosing in step 103 is 16K Ω.
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