CN104795976A - Driving control circuit capable of shutting down PMOS switch tube rapidly and designing method thereof - Google Patents
Driving control circuit capable of shutting down PMOS switch tube rapidly and designing method thereof Download PDFInfo
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- CN104795976A CN104795976A CN201510240067.7A CN201510240067A CN104795976A CN 104795976 A CN104795976 A CN 104795976A CN 201510240067 A CN201510240067 A CN 201510240067A CN 104795976 A CN104795976 A CN 104795976A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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Abstract
The invention discloses a driving control circuit capable of shutting down a PMOS switch tube rapidly. The driving control circuit comprises an NPN type triode Q1, an NPN type triode Q2, a resistor R1, a resistor R2, a resistor R3 and a resistor R4 as well as a capacitor C2, wherein the base electrode of the NPN type triode Q1 is an input end of the driving control circuit; a collector electrode of the NPN type triode Q1 is connected with one end of the resistor R1, and the other end of the resistor R1 is an output end of the driving control circuit; one end of a series circuit of the resistor R1 and the capacitor C2 is connected with the collector electrode of the NPN type triode Q1 and the other end is connected with the base electrode of the NPN type triode Q2; an emitting electrode of the NPN type triode Q2 is connected with an output end of the driving control circuit. The invention also discloses a design method of the driving control circuit capable of shutting down the PMOS switch tube rapidly. The circuit is simple in structure, is convenient to implement, and is low in cost; the design method is simple in step, is high in practicability, and is wide in market prospect.
Description
Technical field
The invention belongs to the Drive Control Technique field of PMOS switch pipe, be specifically related to a kind of Drive and Control Circuit and the method for designing thereof that can turn off PMOS switch pipe fast.
Background technology
The application of switch converters becomes more and more extensive, also higher to the performance requirement of switching device.MOS device for power switching belongs to voltage control device, drain current can be changed by regulating grid voltage, drive circuit is simple, the driving power needed is little, switching speed is fast, and operating frequency is high, and thermal stability is better than GTR, therefore, the switching device in middle low power switch converters adopts metal-oxide-semiconductor mostly.
MOS device for power switching can be divided into NMOS and PMOS device from the type of conducting channel, the charge carrier that NMOS tube forms conducting channel is electronics, the charge carrier that PMOS forms conducting channel is hole, the mobility in the mobility ratio hole of electronics is much bigger, so when physical dimension is equal with operating voltage absolute value, the mutual conductance of NMOS tube is large, speed is fast, electric current is large.Therefore NMOS tube has more advantage than PMOS, and range of application is wider, and the switching device of Switching Power Supply or switch converters generally all adopts nmos switch pipe.But be then not too applicable to adopting NMOS tube in some occasion, as at BUCK, in BUCK-BOOST switch converters or LDO, if still adopt NMOS tube, because its source does not have ground connection, but be in relatively high voltage status when conducting, and the conducting of nmos switch pipe will be made, gate source voltage is necessarily required to be greater than threshold voltage, therefore, suitable difficulty is brought to its driving, boostrap circuit or isolated drive circuit must be adopted, otherwise constrained input will produce larger pressure reduction, while causing considerable power loss, the utilance of input supply voltage is also restricted.
In BUCK, BUCK-BOOST switch converters or LDO, PMOS switch pipe is adopted but to have more advantage.Adopt PMOS that source-drain voltage can be made to fall low as far as possible, conduction voltage drop can be low to hundreds of millivolt, even 0V, greatly reduces the power loss of converter.Thus, the low voltage difference of PMOS, low power capabilities receive and pay close attention to and pay attention in Switching Power Supply or switch converters.But the gate-source parasitic capacitance that PMOS switch pipe exists affects switching characteristic, especially even more serious on turn off process impact, thus, also make it be restricted in the application.
The switching characteristic of MOSFET and the performance of drive circuit closely related, the drive circuit of excellent in design can improve the switching characteristic of MOSFET effectively, thus reduces switching loss, improves the stability of overall efficiency and power device work.Therefore drive circuit requires usually: 1. PWM trigger impulse will have enough fast rising and decrease speed; Be gate capacitance charges with low resistance when 2. opening, for grid provides low resistance discharge loop during shutoff, to improve the switching speed of power MOSFET; 3. in order to make the reliable triggering and conducting of power MOSFET, trigger impulse voltage should higher than the cut-in voltage of pipe; 4. during power switch pipe switch, required drive current is the charging and discharging currents of grid capacitance, and power tube interelectrode capacitance is larger, and required electric current is larger.
The drive circuit of common NMOS tube can be divided into Direct driver type and two kinds, isolation drive type.Direct driver type can only the occasion of driving N metal-oxide-semiconductor source ground, as BOOST converter, normal shock and anti exciting converter etc.And the application of isolated form drive circuit is relatively wide, wherein mainly comprise electromagnetic isolation and light-coupled isolation two kinds of forms.Electromagnetic isolation pulse transformer is as isolated component, have fast response time, the dielectric strength of former limit and secondary is high, but the maximum transmitted width of signal is subject to the restriction of magnetic saturation characteristic, and pulse transformer volume is large, heavy, complex process, also can produce electromagnetic interference.It is little that light-coupled isolation has volume, advantages of simple structure and simple, but there is common mode inhibition capacity difference, the shortcoming that transmission speed is slow, and also need additionally to provide accessory power supply, the application in high frequency efficient Switching Power Supply is restricted.Have minority drive circuit to realize the driving to converter mesohigh end switch device by bootstrap capacitor, but cost is high, reliability and pulse width variation scope are restricted.
And the drive circuit being specifically designed to PMOS is rarely found, control to PMOS or driving just can be usually used in order to make existing drive circuit or PWM controller, promote the performance of BUCK, BUCK-BOOST switch converters or LDO, the problem that the shortcoming existed for existing drive circuit and PMOS switch device can not turn off fast, is badly in need of proposing a kind of Drive and Control Circuit that can turn off PMOS switch pipe fast.
Summary of the invention
Technical problem to be solved by this invention is for above-mentioned deficiency of the prior art, provide a kind of circuit structure simple, realize convenient and cost is low, effectively can ensure that PMOS switch pipe turns off fast, the practical Drive and Control Circuit that can turn off PMOS switch pipe fast.
For solving the problems of the technologies described above, the technical solution used in the present invention is: a kind of Drive and Control Circuit that can turn off PMOS switch pipe fast, it is characterized in that: comprise NPN type triode Q1 and NPN type triode Q2, resistance R1, resistance R2, resistance R3 and resistance R4, and electric capacity C2; The base stage of described NPN type triode Q1 is the input of Drive and Control Circuit, the emitter of described NPN type triode Q1 connects with the cathode output end VIN-of external power source, the collector electrode of described NPN type triode Q1 connects with one end of resistance R1, and the other end of described resistance R1 is the output of Drive and Control Circuit; One end after described electric capacity C2 and resistance R2 connects connects with the collector electrode of NPN type triode Q1, and the other end connects with the base stage of NPN type triode Q2; The collector electrode of described NPN type triode Q2 connects with the cathode output end VIN+ of external power source, and the emitter of described NPN type triode Q2 connects with the output of Drive and Control Circuit; Described resistance R3 is connected between the base stage of NPN type triode Q2 and emitter, and described resistance R4 is connected between the collector electrode of NPN type triode Q2 and emitter.
The above-mentioned Drive and Control Circuit that can turn off PMOS switch pipe fast, it is characterized in that: comprise voltage stabilizing didoe D2, the described anode of voltage stabilizing didoe D2 connects with the emitter of NPN type triode Q2, and the described negative electrode of voltage stabilizing didoe D2 connects with the collector electrode of NPN type triode Q2.
Present invention also offers a kind of method step simple, it is convenient to realize, and can effectively ensure the method for designing that can turn off the Drive and Control Circuit of PMOS switch pipe fast that PMOS switch pipe turns off fast to it is characterized in that the method comprises the following steps:
Step one, the electric capacity C2 selecting suitable parameters and resistance R1, resistance R2, resistance R3 and resistance R4, its detailed process is as follows:
Step 101, according to formula
Choose the resistance of resistance R1 and the resistance of resistance R4, wherein, V
iNfor the output voltage of external power source, V
tHfor the threshold voltage of PMOS switch pipe, V
r1for the voltage at resistance R1 two ends, e is natural constant, and C1 is the parasitic capacitance between the grid of PMOS switch pipe and source electrode, t
onbe charged to magnitude of voltage equal V for PMOS switch pipe is conducting to parasitic capacitance C1 from NPN type triode Q1
tHthe time needed for 2 times;
Step 102, according to formula
Choose the capacitance of electric capacity C2, the resistance of resistance R2 and the resistance of resistance R3, wherein, t
offfor Drive and Control Circuit receives the time that low level pwm control signal turns off to PMOS switch pipe, V
befor NPN type triode Q2 emitter junction voltage and value is 0.7V;
Step 2, connection NPN type triode Q1 and NPN type triode Q2, resistance R1, resistance R2, resistance R3 and resistance R4, and electric capacity C2; Its detailed process is as follows:
Step 201, the emitter of NPN type triode Q1 is received the cathode output end VIN-of external power source, and the collector electrode of NPN type triode Q2 is received the cathode output end VIN+ of external power source;
Step 202, the electric capacity C2 behind one end of resistance R1 and series connection and the end of resistance R2 are received the collector electrode of NPN type triode Q1, and the other end of the electric capacity C2 after series connection and resistance R2 is received the base stage of NPN type triode Q2;
Step 203, the emitter of NPN type triode Q2 is received the other end of resistance R1, and resistance R3 is received between the base stage of NPN type triode Q2 and emitter, resistance R4 is received between the collector electrode of NPN type triode Q2 and emitter.
The above-mentioned method for designing that can turn off the Drive and Control Circuit of PMOS switch pipe fast, it is characterized in that: after step 203, also will access voltage stabilizing didoe D2 in Drive and Control Circuit, and the anode of voltage stabilizing didoe D2 is received the emitter of NPN type triode Q2, the negative electrode of voltage stabilizing didoe D2 is received the collector electrode of NPN type triode Q2.
The above-mentioned method for designing that can turn off the Drive and Control Circuit of PMOS switch pipe fast, is characterized in that: the value of the parasitic capacitance C1 between the grid of the pipe of PMOS switch described in step 101 and source electrode is 100pF ~ 5000pF.
The above-mentioned method for designing that can turn off the Drive and Control Circuit of PMOS switch pipe fast, is characterized in that: t described in step 101
onvalue be 50ns ~ 300ns.
The above-mentioned method for designing that can turn off the Drive and Control Circuit of PMOS switch pipe fast, is characterized in that: V described in step 101
tHvalue be 1V ~ 4V.
The above-mentioned method for designing that can turn off the Drive and Control Circuit of PMOS switch pipe fast, is characterized in that: t described in step 102
offvalue be 50ns ~ 300ns.
The present invention compared with prior art has the following advantages:
1, the circuit structure of Drive and Control Circuit of the present invention is simple, rationally novel in design, and realization is convenient and cost is low.
2, the control of Drive and Control Circuit of the present invention is convenient, and safe and reliable, efficiently solve the difficult problem that PMOS switch pipe cannot turn off fast, when making existing outside PWM controller be operated in high-frequency, PMOS switch pipe can work effectively reliably.
3, the method step of the method for designing of Drive and Control Circuit of the present invention is simple, and it is convenient to realize, and effectively can ensure that PMOS switch pipe turns off fast.
4, the present invention can be widely used in switch converters or Switching Power Supply, the power density of switch converters or Switching Power Supply and efficiency can be made greatly to improve, practical, the fields such as long-range and data communication, computer, business automation equipment, industrial instruments, military affairs, space flight can be widely used in, wide market.
In sum, circuit structure of the present invention is simple, and realization is convenient and cost is low, and method for designing step is simple, effectively can ensure that PMOS switch pipe turns off fast, practical, wide market.
Below by drawings and Examples, technical scheme of the present invention is described in further detail.
Accompanying drawing explanation
Fig. 1 is the circuit theory diagrams that the present invention can turn off the Drive and Control Circuit of PMOS switch pipe fast.
Fig. 2 is using state schematic diagram Drive and Control Circuit of the present invention be applied in BUCK switch converters.
Fig. 3 is using state schematic diagram Drive and Control Circuit of the present invention be applied in BUCK-BOOST switch converters.
Description of reference numerals:
1-Drive and Control Circuit; 2-outside PWM controller; 3-BUCK switch converters; 4-BUCK-BOOST switch converters.
Embodiment
As shown in Figure 1, the Drive and Control Circuit that can turn off PMOS switch pipe fast of the present invention, comprises NPN type triode Q1 and NPN type triode Q2, resistance R1, resistance R2, resistance R3 and resistance R4, and electric capacity C2; The base stage of described NPN type triode Q1 is the input of Drive and Control Circuit 1, the emitter of described NPN type triode Q1 connects with the cathode output end VIN-of external power source, the collector electrode of described NPN type triode Q1 connects with one end of resistance R1, and the other end of described resistance R1 is the output of Drive and Control Circuit 1; One end after described electric capacity C2 and resistance R2 connects connects with the collector electrode of NPN type triode Q1, and the other end connects with the base stage of NPN type triode Q2; The collector electrode of described NPN type triode Q2 connects with the cathode output end VIN+ of external power source, and the emitter of described NPN type triode Q2 connects with the output of Drive and Control Circuit 1; Described resistance R3 is connected between the base stage of NPN type triode Q2 and emitter, and described resistance R4 is connected between the collector electrode of NPN type triode Q2 and emitter.During concrete enforcement, the input of described Drive and Control Circuit 1 connects with the output of outside PWM controller 2.
As shown in Figure 1, in the present embodiment, the Drive and Control Circuit that can turn off PMOS switch pipe fast of the present invention, also comprise voltage stabilizing didoe D2, the described anode of voltage stabilizing didoe D2 connects with the emitter of NPN type triode Q2, and the described negative electrode of voltage stabilizing didoe D2 connects with the collector electrode of NPN type triode Q2.
In the present embodiment, described PMOS switch pipe is P-channel enhancement type switch mosfet pipe Q3, and the parasitic capacitance between the grid of described PMOS switch pipe and source electrode is C1.The grid of described PMOS switch pipe (P-channel enhancement type switch mosfet pipe Q3) connects with the output of Drive and Control Circuit 1, and the source electrode of described PMOS switch pipe (P-channel enhancement type switch mosfet pipe Q3) connects with the cathode output end VIN+ of external power source.
The operation principle that can turn off the Drive and Control Circuit of PMOS switch pipe fast of the present invention is: when outside PWM controller 2 exports high level, NPN type triode Q1 conducting, external power source is charged to the parasitic capacitance C1 between the grid of PMOS switch pipe (P-channel enhancement type switch mosfet pipe Q3) and source electrode fast by resistance R1, when the gate source voltage of PMOS switch pipe is greater than the threshold voltage of PMOS switch pipe (P-channel enhancement type switch mosfet pipe Q3), PMOS switch pipe (P-channel enhancement type switch mosfet pipe Q3) is open-minded; Meanwhile, external power source is charged to electric capacity C2 by resistance R2, resistance R3 and resistance R4, during this period, by selecting suitable circuit components parameter, ensures resistance R1 to maintain certain voltage drop, to guarantee that electric capacity C2 can be charged to a suitable voltage; When outside PWM controller 2 output low level, NPN type triode Q1 turns off, the electric discharge of electric capacity C2 can make NPN type triode Q2 fast conducting, thus make the parasitic capacitance C1 repid discharge between the grid of PMOS switch pipe (P-channel enhancement type switch mosfet pipe Q3) and source electrode, PMOS switch pipe (P-channel enhancement type switch mosfet pipe Q3) turns off fast.The effect of resistance R4 is when outside PWM controller 2 output low level, the voltage drop that leakage current when preventing NPN type triode Q1 from turning off produces between the grid source of PMOS switch pipe exceedes the threshold voltage of PMOS switch pipe (P-channel enhancement type switch mosfet pipe Q3) and PMOS switch pipe (P-channel enhancement type switch mosfet pipe Q3) is misleaded, and namely guarantees PMOS switch pipe (P-channel enhancement type switch mosfet pipe Q3) reliable turn-off; The effect of voltage stabilizing didoe D2 is restricted in certain voltage range by the gate source voltage of PMOS switch pipe (P-channel enhancement type switch mosfet pipe Q3), to prevent the grid source of PMOS switch pipe (P-channel enhancement type switch mosfet pipe Q3) from puncturing, the voltage stabilizing value of usual voltage stabilizing didoe D2 is no more than 20V.
Such as, as shown in Figure 2, Drive and Control Circuit of the present invention is applied in BUCK switch converters 3, BUCK switch converters 3 comprises PMOS switch pipe (P-channel enhancement type switch mosfet pipe Q3), inductance L 1, switching diode D1, electric capacity C3, resistance R5 and resistance R6, one end of described inductance L 1 and the negative electrode of switching diode D1 all connect with the drain electrode of PMOS switch pipe (P-channel enhancement type switch mosfet pipe Q3), one end of one end of described electric capacity C3 and the resistance R5 after connecting and resistance R6 all connects with one end of inductance L 1, the anode of described switching diode D1 and the other end of electric capacity C3, and resistance R5 after series connection and the other end of resistance R6 all connect with the cathode output end VIN-of external power source, load RL is connected between the other end of described inductance L 1 and the cathode output end VIN-of external power source, the link of described resistance R5 and resistance R6 is the output of feedback voltage signal FB and connects with the feedback voltage signal input of outside PWM controller 2, after the feedback voltage signal FB that described outside PWM controller 2 is received compares with reference voltage signal Vref, control the output of pwm control signal.
In PMOS switch pipe (P-channel enhancement type switch mosfet pipe Q3) conduction period, switching diode D1 ends because bearing reverse voltage, and external power source provides electric energy by inductance L 1 to load RL, charges to inductance L 1 simultaneously; At PMOS switch pipe (P-channel enhancement type switch mosfet pipe Q3) blocking interval, switching diode D1 conducting afterflow, inductance L 1 is discharged and to be powered to load RL, charges, to maintain output voltage stabilization to electric capacity C3 simultaneously.
Again such as, as shown in Figure 3, Drive and Control Circuit of the present invention is applied in BUCK-BOOST switch converters 4, BUCK-BOOST switch converters 4 comprises PMOS switch pipe (P-channel enhancement type switch mosfet pipe Q3), inductance L 2, switching diode D3, electric capacity C4, resistance R7 and resistance R8, one end of described inductance L 2 and the negative electrode of switching diode D3 all connect with the drain electrode of PMOS switch pipe (P-channel enhancement type switch mosfet pipe Q3), one end of one end of described electric capacity C4 and the resistance R7 after connecting and resistance R8 all connects with the anode of switching diode D3, the other end of described inductance L 2 and the other end of electric capacity C4, and resistance R7 after series connection and the other end of resistance R8 all connect with the cathode output end VIN-of external power source, load RL is connected between the anode of described switching diode D3 and the cathode output end VIN-of external power source, the link of described resistance R7 and resistance R8 is the output of feedback voltage signal FB and connects with the feedback voltage signal input of outside PWM controller 2, after the feedback voltage signal FB that described outside PWM controller 2 is received compares with reference voltage signal Vref, control the output of pwm control signal.
In PMOS switch pipe (P-channel enhancement type switch mosfet pipe Q3) conduction period, switching diode D3 ends because bearing reverse voltage, and external power source charges to inductance L 2, and electric capacity C4 discharges and to power to load RL; At PMOS switch pipe (P-channel enhancement type switch mosfet pipe Q3) blocking interval, switching diode D3 conducting afterflow, inductance L 2 is charged to electric capacity C4, powers, to maintain output voltage stabilization to load RL simultaneously.
The method for designing that can turn off the Drive and Control Circuit of PMOS switch pipe fast of the present invention, comprises the following steps:
Step one, the electric capacity C2 selecting suitable parameters and resistance R1, resistance R2, resistance R3 and resistance R4, its detailed process is as follows:
Step 101, according to formula
Choose the resistance of resistance R1 and the resistance of resistance R4, wherein, V
iNfor the output voltage of external power source, V
tHfor the threshold voltage of PMOS switch pipe, V
r1for the voltage at resistance R1 two ends, e is natural constant, and C1 is the parasitic capacitance between the grid of PMOS switch pipe and source electrode, t
onbe charged to magnitude of voltage equal V for PMOS switch pipe is conducting to parasitic capacitance C1 from NPN type triode Q1
tHthe time needed for 2 times;
In the present embodiment, the value of the parasitic capacitance C1 between the grid of the pipe of PMOS switch described in step 101 and source electrode is 100pF ~ 5000pF.T described in step 101
onvalue be 50ns ~ 300ns.V described in step 101
tHvalue be 1V ~ 4V.
Particularly, in the present embodiment, V
iN=18V, V
tH=4V, V
r1=2V, t
on=100ns, C1=1000pF, according to formula
Calculate R1=170.2 Ω, R4=1360 Ω, the resistance directly can choosing resistance R1 is 170.2 Ω, the resistance of resistance R4 is 1360 Ω, but because 170.2 Ω and 1360 Ω are not conventional resistances, therefore in order to buy the convenience of resistance, when specifically implementing, the resistance choosing resistance R1 is 180 Ω, and the resistance of resistance R4 is 1.5k Ω; 180 Ω are and the immediate conventional resistance of 170.2 Ω, and 1.5k Ω is and the immediate conventional resistance of 1360 Ω;
Step 102, according to formula
Choose the capacitance of electric capacity C2, the resistance of resistance R2 and the resistance of resistance R3, wherein, t
offfor Drive and Control Circuit 1 receives the time that low level pwm control signal turns off to PMOS switch pipe, V
befor NPN type triode Q2 emitter junction voltage and value is 0.7V;
In the present embodiment, t described in step 102
offvalue be 50ns ~ 300ns.
Particularly, in the present embodiment, C2=100pF, t
off=200ns, according to formula
Calculate R2=1733.3 Ω, R3=7805.7 Ω, the resistance directly can choosing resistance R2 is 1733.3 Ω, the resistance of resistance R4 is 7805.7 Ω, but because 1733.3 Ω and 7805.7 Ω are not conventional resistances, therefore in order to buy the convenience of resistance, when specifically implementing, the resistance choosing resistance R2 is 1.8k Ω, and the resistance of resistance R4 is 8.2k Ω; 1.8k Ω is and the immediate conventional resistance of 1733.3 Ω, and 8.2k Ω is and the immediate conventional resistance of 7805.7 Ω;
Step 2, connection NPN type triode Q1 and NPN type triode Q2, resistance R1, resistance R2, resistance R3 and resistance R4, and electric capacity C2; Its detailed process is as follows:
Step 201, the emitter of NPN type triode Q1 is received the cathode output end VIN-of external power source, and the collector electrode of NPN type triode Q2 is received the cathode output end VIN+ of external power source;
Step 202, the electric capacity C2 behind one end of resistance R1 and series connection and the end of resistance R2 are received the collector electrode of NPN type triode Q1, and the other end of the electric capacity C2 after series connection and resistance R2 is received the base stage of NPN type triode Q2;
Step 203, the emitter of NPN type triode Q2 is received the other end of resistance R1, and resistance R3 is received between the base stage of NPN type triode Q2 and emitter, resistance R4 is received between the collector electrode of NPN type triode Q2 and emitter.
In the present embodiment, also to give in Drive and Control Circuit after step 203 and access voltage stabilizing didoe D2, and the anode of voltage stabilizing didoe D2 is received the emitter of NPN type triode Q2, the negative electrode of voltage stabilizing didoe D2 be received the collector electrode of NPN type triode Q2.In the present embodiment, the voltage stabilizing value of voltage stabilizing didoe D2 is 18V.
The above; it is only preferred embodiment of the present invention; not the present invention is imposed any restrictions, every above embodiment is done according to the technology of the present invention essence any simple modification, change and equivalent structure change, all still belong in the protection range of technical solution of the present invention.
Claims (8)
1. can turn off a Drive and Control Circuit for PMOS switch pipe fast, it is characterized in that: comprise NPN type triode Q1 and NPN type triode Q2, resistance R1, resistance R2, resistance R3 and resistance R4, and electric capacity C2; The base stage of described NPN type triode Q1 is the input of Drive and Control Circuit (1), the emitter of described NPN type triode Q1 connects with the cathode output end VIN-of external power source, the collector electrode of described NPN type triode Q1 connects with one end of resistance R1, and the other end of described resistance R1 is the output of Drive and Control Circuit (1); One end after described electric capacity C2 and resistance R2 connects connects with the collector electrode of NPN type triode Q1, and the other end connects with the base stage of NPN type triode Q2; The collector electrode of described NPN type triode Q2 connects with the cathode output end VIN+ of external power source, and the emitter of described NPN type triode Q2 connects with the output of Drive and Control Circuit (1); Described resistance R3 is connected between the base stage of NPN type triode Q2 and emitter, and described resistance R4 is connected between the collector electrode of NPN type triode Q2 and emitter.
2. according to the Drive and Control Circuit that can turn off PMOS switch pipe fast according to claim 1, it is characterized in that: comprise voltage stabilizing didoe D2, the described anode of voltage stabilizing didoe D2 connects with the emitter of NPN type triode Q2, and the described negative electrode of voltage stabilizing didoe D2 connects with the collector electrode of NPN type triode Q2.
3. design can turn off a method for the Drive and Control Circuit of PMOS switch pipe as claimed in claim 1 fast, it is characterized in that the method comprises the following steps:
Step one, the electric capacity C2 selecting suitable parameters and resistance R1, resistance R2, resistance R3 and resistance R4, its detailed process is as follows:
Step 101, according to formula
Choose the resistance of resistance R1 and the resistance of resistance R4, wherein, V
iNfor the output voltage of external power source, V
tHfor the threshold voltage of PMOS switch pipe, V
r1for the voltage at resistance R1 two ends, e is natural constant, and C1 is the parasitic capacitance between the grid of PMOS switch pipe and source electrode, t
onbe charged to magnitude of voltage equal V for PMOS switch pipe is conducting to parasitic capacitance C1 from NPN type triode Q1
tHthe time needed for 2 times;
Step 102, according to formula
Choose the capacitance of electric capacity C2, the resistance of resistance R2 and the resistance of resistance R3, wherein, t
offfor Drive and Control Circuit (1) receives the time that low level pwm control signal turns off to PMOS switch pipe, V
befor NPN type triode Q2 emitter junction voltage and value is 0.7V;
Step 2, connection NPN type triode Q1 and NPN type triode Q2, resistance R1, resistance R2, resistance R3 and resistance R4, and electric capacity C2; Its detailed process is as follows:
Step 201, the emitter of NPN type triode Q1 is received the cathode output end VIN-of external power source, and the collector electrode of NPN type triode Q2 is received the cathode output end VIN+ of external power source;
Step 202, the electric capacity C2 behind one end of resistance R1 and series connection and the end of resistance R2 are received the collector electrode of NPN type triode Q1, and the other end of the electric capacity C2 after series connection and resistance R2 is received the base stage of NPN type triode Q2;
Step 203, the emitter of NPN type triode Q2 is received the other end of resistance R1, and resistance R3 is received between the base stage of NPN type triode Q2 and emitter, resistance R4 is received between the collector electrode of NPN type triode Q2 and emitter.
4. in accordance with the method for claim 3, it is characterized in that: after step 203, also will access voltage stabilizing didoe D2 in Drive and Control Circuit, and the anode of voltage stabilizing didoe D2 is received the emitter of NPN type triode Q2, the negative electrode of voltage stabilizing didoe D2 is received the collector electrode of NPN type triode Q2.
5. in accordance with the method for claim 3, it is characterized in that: the value of the parasitic capacitance C1 between the grid of the pipe of PMOS switch described in step 101 and source electrode is 100pF ~ 5000pF.
6. in accordance with the method for claim 3, it is characterized in that: t described in step 101
onvalue be 50ns ~ 300ns.
7. in accordance with the method for claim 3, it is characterized in that: V described in step 101
tHvalue be 1V ~ 4V.
8. in accordance with the method for claim 3, it is characterized in that: t described in step 102
offvalue be 50ns ~ 300ns.
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN108462163A (en) * | 2017-02-20 | 2018-08-28 | 成都鼎桥通信技术有限公司 | Meet the direct current reverse-connection preventing circuit of negative sense surge requirement |
| CN108768355A (en) * | 2018-04-10 | 2018-11-06 | 上海空间电源研究所 | Fast conducting Pmos tube drive circuits and implementation method |
| CN109742953A (en) * | 2018-12-27 | 2019-05-10 | 广州金升阳科技有限公司 | A kind of magnetic isolation drive circuit |
| CN109742951A (en) * | 2018-12-27 | 2019-05-10 | 广州金升阳科技有限公司 | A kind of magnetic isolation drive circuit |
| CN110446312A (en) * | 2019-06-25 | 2019-11-12 | 杭州艾芯智能科技有限公司 | A kind of circuit design method about raising light source performance |
| CN111969838A (en) * | 2020-10-20 | 2020-11-20 | 上海芯龙半导体技术股份有限公司南京分公司 | PMOS power tube grid clamping driving module, driving circuit and switching power supply |
| CN112019011A (en) * | 2019-05-31 | 2020-12-01 | 群光电能科技股份有限公司 | Soft start control circuit |
| US11128292B2 (en) | 2019-05-31 | 2021-09-21 | Chicony Power Technology Co., Ltd. | Soft-start control circuit |
| US11606030B1 (en) * | 2020-10-15 | 2023-03-14 | Dialog Semiconductor B.V. | Driver for driving a p-type power switch |
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| CN106655724B (en) * | 2016-11-03 | 2018-12-07 | 广州视源电子科技股份有限公司 | Power switch circuit |
| CN106655724A (en) * | 2016-11-03 | 2017-05-10 | 广州视源电子科技股份有限公司 | Power switch circuit |
| CN108462163B (en) * | 2017-02-20 | 2019-09-17 | 成都鼎桥通信技术有限公司 | Meet the direct current reverse-connection preventing circuit of negative sense surge requirement |
| CN108462163A (en) * | 2017-02-20 | 2018-08-28 | 成都鼎桥通信技术有限公司 | Meet the direct current reverse-connection preventing circuit of negative sense surge requirement |
| CN108768355A (en) * | 2018-04-10 | 2018-11-06 | 上海空间电源研究所 | Fast conducting Pmos tube drive circuits and implementation method |
| CN108768355B (en) * | 2018-04-10 | 2022-08-19 | 上海空间电源研究所 | Quick-conduction Pmos tube driving circuit and implementation method |
| CN109742953A (en) * | 2018-12-27 | 2019-05-10 | 广州金升阳科技有限公司 | A kind of magnetic isolation drive circuit |
| CN109742951A (en) * | 2018-12-27 | 2019-05-10 | 广州金升阳科技有限公司 | A kind of magnetic isolation drive circuit |
| CN112019011A (en) * | 2019-05-31 | 2020-12-01 | 群光电能科技股份有限公司 | Soft start control circuit |
| US11128292B2 (en) | 2019-05-31 | 2021-09-21 | Chicony Power Technology Co., Ltd. | Soft-start control circuit |
| CN110446312A (en) * | 2019-06-25 | 2019-11-12 | 杭州艾芯智能科技有限公司 | A kind of circuit design method about raising light source performance |
| CN110446312B (en) * | 2019-06-25 | 2022-02-18 | 杭州艾芯智能科技有限公司 | Circuit design method for improving light source performance |
| US11606030B1 (en) * | 2020-10-15 | 2023-03-14 | Dialog Semiconductor B.V. | Driver for driving a p-type power switch |
| CN111969838A (en) * | 2020-10-20 | 2020-11-20 | 上海芯龙半导体技术股份有限公司南京分公司 | PMOS power tube grid clamping driving module, driving circuit and switching power supply |
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