CN106100297B - Driving circuit based on silicon carbide MOSFET - Google Patents
Driving circuit based on silicon carbide MOSFET Download PDFInfo
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- CN106100297B CN106100297B CN201610623655.3A CN201610623655A CN106100297B CN 106100297 B CN106100297 B CN 106100297B CN 201610623655 A CN201610623655 A CN 201610623655A CN 106100297 B CN106100297 B CN 106100297B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0038—Circuits or arrangements for suppressing, e.g. by masking incorrect turn-on or turn-off signals, e.g. due to current spikes in current mode control
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The present invention relates to a kind of driving circuits based on silicon carbide MOSFET.Different circuits is passed through in the circuit that turns on and off of the driving circuit, further includes：Four capacitance Ca1_H、Ca2_H、Ca1_LAnd Ca2_L, capacitance Ca2_HAnd Ca2_LEffect be reduce packaging pin on common source parasitic inductance LS2HAnd LS2LInfluence；Capacitance Ca1_HAnd Ca1_LEffect be when crosstalk occurs, for silicon carbide MOSFET encapsulation inside junction capacity CGDHAnd CGDLCharging and discharging currents more low-impedance circuit is provided.The present invention can be used for inhibiting the cross-interference issue in current transformer such as three-phase bridge type converter, full-bridge DC DC converters with bridge arm structure, under the premise of not increasing driving circuit complexity, silicon carbide MOSFET gate-source voltage spike caused by cross-interference issue is inhibited, the reliability of the power electronic equipment based on silicon carbide MOSFET is improved.
Description
Technical field
The invention belongs to power electronic circuit technical field, it is related to the low shutdown grid return resistance based on silicon carbide MOSFET
Anti- driving circuit.
Background technology
As shown in Figure 1, adding capacitance C in traditional driving circuit based on silicon carbide MOSFETa_HAnd Ca_L, it is used for structure
Low ESR branch is built, inhibits gate-source voltage spike caused by cross-interference issue, but adds capacitance Ca_HAnd Ca_LIt is equivalent to increase
Grid source junction capacitance CGSHAnd CGSL, switching speed can be influenced.Fig. 2 provides a kind of in traditional drive based on silicon carbide MOSFET
Addition auxiliary switch S in dynamic circuita_HAnd Sa_LAnd capacitance Ca_HAnd Ca_L, can both inhibit grid source electrode caused by cross-interference issue
Due to voltage spikes, while avoiding only adding capacitance Ca_HAnd Ca_LThe problem of influencing silicon carbide MOSFET switching speed.Fig. 3 is in Fig. 2
The drive signal of corresponding switching tube.
The operation principle of prior art shown in Fig. 2 is as follows：
(t0~t1)：Capacitance Ca_HAnd Ca_LPrecharge.Pass through auxiliary switch Sa_H、Sa_LBody diode and resistance
Rg_H、Rg_L, capacitance Ca_HAnd Ca_LVoltage be-VSS_HWith-VSS_L。
(t1~t2)：Auxiliary switch Sa_HAnd Sa_LIt is still within cut-off state.In t2Moment, bridge arm down tube Q2Start to lead
It is logical.
(t2~t3)：Bridge arm down tube Q2Conducting.At this point, switching tube S1_LIt is in the conduction state, Simultaneous Switching pipe S2_LAnd auxiliary
Switching tube Sa_LIt is off state.At the same time, auxiliary switch Sa_HConducting, capacitance Ca_HIt is connected in parallel on bridge arm upper tube Q1Electricity
Hold CGSHBoth ends are the capacitance C in switching processGDHFor a Low ESR branch.Bridge arm upper tube Q1Grid impedance significantly subtract
Small, therefore, the forward voltage spike of grid source electrode also accordingly reduces, and opening cross-interference issue caused by the moment is inhibited.
(t3~t4)：Bridge arm down tube Q2It is fully on.Capacitance Ca_HAnd CGSHPass through resistance Rg_HWith-VSS_HElectricity, until
Capacitance Ca_HAnd CGSHOn voltage drop to-VSS_HUntil.
(t4~t5)：Bridge arm down tube Q2Shutdown.Switching tube S in the process1_LShutdown, switching tube S2_LIt is open-minded.It is same with this
When, auxiliary switch Sa_HIt is on stage, capacitance Ca_HIt is connected in parallel on bridge arm upper tube Q2Capacitance CGSHBoth ends.Bridge arm upper tube Q2's
Grid impedance is smaller, thus can effective suppressor source electrode negative voltage spike.
(t5~t6)：Bridge arm down tube Q2It complete switches off.Auxiliary switch Sa_HShutdown, capacitance Ca_HAnd CGSHSeparated company
It connects.Capacitance CGSHCharging, until its voltage rises to-VSS_HUntil.
Auxiliary switch S is added in driving circuit shown in Fig. 2a_HAnd Sa_L, additional control signal is needed to control
Auxiliary switch turns on and off, and disadvantage is mainly reflected in the following aspects：
1) auxiliary switch needs additional control signal, increases the complexity of control；
2) layout of driving circuit is influenced：Due to the presence of auxiliary switch and capacitance, the area of driving circuit increases, meeting
Influence the switching characteristic of switching tube in high-frequency circuit.
Silicon carbide MOSFET in application, will produce cross-interference issue, causes silicon carbide MOSFET in high frequency bridge circuit
There is positive spike or negative sense spike in gate-source voltage, as shown in Figure 4.Reliability of the cross-interference issue for power electronic equipment
It influences greatly, gate-source voltage forward direction spike can cause misleading for silicon carbide MOSFET, cause bridgc arm short；And grid source electrode electricity
Pressure negative sense spike can cause the grid source breakdown of silicon carbide MOSFET.The factor for forming cross-interference issue is mainly the parasitism by circuit
Parameter causes, such as the junction capacity C of silicon carbide MOSFETGD(i.e. C in Fig. 1 and 2GDHAnd CGDL) and CGS(i.e. C in Fig. 1 and 2GSH
And CGSL), common source parasitic inductance (exists simultaneously in driving circuit circuit and main loop of power circuit).Driving circuit is with the presence or absence of altogether
Source parasitic inductance determines different crosstalk phenomenons.Also, existing technical solution does not consider that common source is parasitic in device encapsulation
The influence of inductance, and braking measure is not taken for its influence to cross-interference issue.
In conclusion when the prior art solves cross-interference issue, need to increase auxiliary circuit in the driving circuit, and assists electricity
Auxiliary switch in road needs additional control signal, and controls signal and need certain precision, can increase digital control
Difficulty.Moreover, after adding auxiliary circuit in driving circuit, the layout of original driving circuit can be influenced so that driving circuit
Loop area increases.In high-frequency circuit, the increase of driving circuit loop area can influence the switching characteristic of switching tube.In addition,
Existing technical solution does not consider the influence of parasitic inductance-common source parasitic inductance in device encapsulation, and is not directed to it to crosstalk
Braking measure is taken in the influence of problem.
Invention content
In view of the deficiencies in the prior art, the purpose of the present invention is to provide a kind of drives based on silicon carbide MOSFET
Dynamic circuit, for inhibiting the crosstalk in current transformer such as three-phase bridge type converter, full-bridge DC-DC converter with bridge arm structure
Problem.When there is cross-interference issue, Low ESR branch is provided in driving circuit, reduces gate-source voltage variation.The present invention is not
Under the premise of the complexity for increasing driving circuit, it is suppressed that silicon carbide MOSFET gate-source voltage spike caused by cross-interference issue,
Improve the reliability of the power electronic equipment based on silicon carbide MOSFET.
To achieve the above objectives, the technical solution adopted by the present invention is that：
A kind of driving circuit based on silicon carbide MOSFET, the silicon carbide MOSFET include bridge arm upper tube Q1Under bridge arm
Pipe Q2；Inductance LS2HWith inductance LS2LRespectively Q1And Q2Packaging pin common source parasitic inductance；
The bridge arm upper tube Q1Driving circuit include voltage source VGS_H, switching tube S1_H, open resistance Ron_H, voltage
Source-VSS_H, switching tube S2_HWith shutdown resistance Roff_H；
The voltage source VGS_HAnode with switching tube S1_HDrain electrode connection, the switching tube S1_HSource electrode and open grid
Electrode resistance Ron_HOne end connection, it is described to open resistance Ron_HThe other end and bridge arm upper tube Q1Grid connection；
The voltage source VGS_HCathode and voltage source-VSS_HAnode connection, the voltage source-VSS_HCathode with open
Close pipe S2_HSource electrode connection, the switching tube S2_HDrain electrode and shutdown resistance Roff_HOne end connection, the shutdown grid
Electrode resistance Roff_HThe other end and bridge arm upper tube Q1Grid connection, the inductance LS2HOne end and bridge arm upper tube Q1Source electrode
Connection, the other end and the voltage source-VSS_HAnode connection；
The bridge arm down tube Q2Driving circuit include voltage source VGS_L, switching tube S1_L, open resistance Ron_L, voltage
Source-VSS_L, switching tube S2_LWith shutdown resistance Roff_L；
The voltage source VGS_LAnode with switching tube S1_LDrain electrode connection, the switching tube S1_LSource electrode and open grid
Electrode resistance Ron_LOne end connection, it is described to open resistance Ron_LThe other end and bridge arm down tube Q2Grid connection；
The voltage source VGS_LCathode and voltage source-VSS_LAnode connection, the voltage source-VSS_LCathode with open
Close pipe S2_LSource electrode connection, the switching tube S2_LDrain electrode and shutdown resistance Roff_LOne end connection, the shutdown grid
Electrode resistance Roff_LThe other end and bridge arm down tube Q2Grid connection, the inductance LS2LOne end and bridge arm down tube Q2Source electrode
Connection, the other end and the voltage source-VSS_LAnode connection；
It is characterized in that：
Different circuits is passed through in the circuit that turns on and off of the driving circuit of the silicon carbide MOSFET, further includes：Four
Capacitance Ca1_H、Ca2_H、Ca1_LAnd Ca2_L,
Capacitance Ca2_HEffect be reduce packaging pin on common source parasitic inductance LS2HInfluence, the capacitance Ca2_HOne
End with bridge arm upper tube Q1Source electrode connection, the other end with for provides turn off negative pressure voltage source-VSS_HCathode connection；
Capacitance Ca2_LEffect be reduce packaging pin on common source parasitic inductance LS2LInfluence, the capacitance Ca2_LOne
End with bridge arm down tube Q2Source electrode connection, the other end with for provides turn off negative pressure voltage source-VSS_LCathode connection；
Capacitance Ca1_HEffect be in Q1When crosstalk occurs, for the grid drain junction capacitance C inside silicon carbide MOSFET encapsulationGDH
Charging and discharging currents more low-impedance circuit, the capacitance C are provideda1_HWith shutdown resistance Roff_HIt is in parallel；
Capacitance Ca1_LEffect be in Q2When crosstalk occurs, for the grid drain junction capacitance C inside silicon carbide MOSFET encapsulationGDL
Charging and discharging currents more low-impedance circuit, the capacitance C are provideda1_LWith shutdown resistance Roff_LIt is in parallel.
In above-mentioned driving circuit,
Q1Driving circuit open circuit pass through voltage source VGS_H, switching tube S1_HWith open resistance Ron_H；
Q1Driving circuit turn-off circuit pass through voltage source-VSS_H, switching tube S2_HWith shutdown resistance Roff_H；
Q2Driving circuit open circuit pass through voltage source VGS_L, switching tube S1_LWith open resistance Ron_L；
Q2Driving circuit turn-off circuit pass through voltage source-VSS_L, switching tube S2_LWith shutdown resistance Roff_L。
In above-mentioned driving circuit,
Q1Driving circuit in switching tube S1_HWith switching tube S2_HDrive signal is complementary；
Q2Driving circuit in switching tube S1_LWith switching tube S2_LDrive signal is complementary.
In above-mentioned driving circuit,
Q1Encapsulation inside include grid source junction capacitance CGSH, grid drain junction capacitance CGDHWith hourglass source electrode junction capacity CDSH；
Q2Encapsulation inside include grid source junction capacitance CGSL, grid drain junction capacitance CGDLWith hourglass source electrode junction capacity CDSL；
Q1And Q2The common source parasitic inductance of encapsulation internal connection line be respectively inductance LS1HWith inductance LS1L；
Q1And Q2Internal gate resistance is respectively resistance RG1HWith resistance RG1L。
In above-mentioned driving circuit,
In Q1When crosstalk occurs, capacitance Ca1_HIt is sufficiently large, make most of junction capacity CGDHVariable-current will flow through capacitance
Ca1_H, rather than junction capacity CGSH, Q1Due to voltage spikes will reduce on grid source electrode；
In Q2When crosstalk occurs, capacitance Ca1_LIt is sufficiently large, make most of junction capacity CGDLVariable-current will flow through capacitance
Ca1_L, rather than junction capacity CGSL, Q2Due to voltage spikes will reduce on grid source electrode.
In above-mentioned driving circuit,
When electric current change dramatically, common source parasitic inductance LS2HUpper induction generates voltage drop and storage energy, at this time capacitance
Ca2_HUpper voltage and energy also change therewith, as capacitance Ca2_HWhen sufficiently large, common source parasitic inductance LS2HWith driving circuit Q1Decoupling,
Common source parasitic inductance LS2HInfluence reduce；
When electric current change dramatically, common source parasitic inductance LS2LUpper induction generates voltage drop and storage energy, at this time capacitance
Ca2_LUpper voltage and energy also change therewith, as capacitance Ca2_LWhen sufficiently large, common source parasitic inductance LS2LWith driving circuit Q2Decoupling,
Common source parasitic inductance LS2LInfluence reduce.
Driving circuit of the present invention based on silicon carbide MOSFET has the beneficial effect that：
Fig. 5 is a kind of existing driving circuit, and its feature is that the driving circuit that silicon carbide MOSFET turns on and off returns
Different circuits is passed through on road.Such as silicon carbide MOSFET Q1When opening, driving circuit passes through voltage source VGS_H, switching tube S1_H
With open resistance Ron_H；Silicon carbide MOSFET Q1When shutdown, driving circuit process-VSS_H、S2_HAnd Roff_H.The present invention
Increase by four capacitance C on the basis of driving circuit shown in Fig. 5a1_H、Ca2_H、Ca1_LAnd Ca2_L, as shown in Figure 6.The driving of the present invention
Circuit can reduce the influence of common source parasitic inductance and inhibit cross-interference issue, and be not necessarily to auxiliary switch, not influence silicon carbide
The normal switch speed of MOSFET, does not influence the layout of driving circuit, has the advantages of simple structure and easy realization, specific as follows：
1. the framework of the driving circuit of low shutdown grid return impedance：This driving circuit is characterized in without additionally active
Device, achieve the purpose that inhibit cross-interference issue under the premise of, can not influence silicon carbide MOSFET normal switch speed and
The layout that can not influence driving circuit, has the advantages of simple structure and easy realization.
2. capacitance Ca2_HAnd Ca2_LConnection type：Capacitance Ca2_HAnd Ca2_LEffect be reduce packaging pin on common source
Parasitic inductance LS2HAnd LS2LInfluence, capacitance Ca2_HAnd Ca2_LIt needs to be connected in parallel on common source parasitic inductance and for providing shutdown negative pressure
Voltage source-VSS_HOr-VSS_LOn.
3. capacitance Ca1_HAnd Ca1_LConnection type：Capacitance Ca1_HAnd Ca1_LEffect be when crosstalk occurs, be silicon carbide
Junction capacity C inside mosfet packageGDHAnd CGDLCharging and discharging currents more low-impedance circuit is provided.Capacitance Ca1_HAnd Ca1_LPhase
As the capacitance C in Fig. 1a_HAnd Ca_L, but in order to avoid increasing auxiliary switch, capacitance Ca1_HAnd Ca1_LIt is connected in parallel on shutdown grid
Electrode resistance Roff_HAnd Roff_LOn, then utilize switching tube S2_HAnd S2_LControlling it not influences silicon carbide MOSFET switching speed.
Description of the drawings
The present invention has following attached drawing：
Fig. 1 is the driving circuit of prior art；
Fig. 2 is the improvement driving circuit based on prior art
Fig. 3 is the drive signal that Fig. 2 driving circuits correspond to switching tube；
Fig. 4 is positive negative sense due to voltage spikes caused by cross-interference issue；
Fig. 5 is existing driving circuit；
Fig. 6 is the improvement driving circuit figure proposed by the present invention of the driving circuit based on Fig. 5；
Fig. 7 is switching tube S in the driving circuit of the present invention1_H、S2_H、S1_LAnd S2_LSignal logic；
Fig. 8 is the equivalent circuit diagram of one switch periods four-stage of driving circuit of the present invention；Wherein, (a) is t1-t2
The equivalent circuit diagram at moment；(b) it is t2-t3The equivalent circuit diagram at moment；(c) it is t3-t4The equivalent circuit diagram at moment；(d) it is t4-
t5The equivalent circuit diagram at moment；
Fig. 9 is the equivalent circuit for calculating capacitance Ca1_H.
Specific implementation mode
Below in conjunction with attached drawing, invention is further described in detail.
Embodiment 1
1, driving circuit (as shown in Figure 6) of the invention.
Since cross-interference issue results from switching moments, it is believed that load current IoWith input voltage VDCIt is constant.Shown in Fig. 6
Driving circuit is to increase four capacitance C on the basis of existing driving circuit shown in Fig. 5a1_H、Ca2_H、Ca1_LAnd Ca2_L, specifically
It is as follows：
Q1Driving circuit in S1_HAnd S2_HDrive signal is complementary, Q2Driving circuit in S1_LAnd S2_LDrive signal is complementary；
Capacitance CGSH, capacitance CGDH, capacitance CDSHRespectively silicon carbide MOSFET Q1Encapsulation inside grid source junction capacitances, grid
Drain junction capacitance and hourglass source electrode junction capacity；
Capacitance CGSL, capacitance CGDL, capacitance CDSLRespectively silicon carbide MOSFET Q2Encapsulation inside grid source junction capacitances, grid
Drain junction capacitance and hourglass source electrode junction capacity；
Inductance LS1HWith inductance LS1LRespectively silicon carbide MOSFET Q1And Q2Encapsulation internal connection line the parasitic electricity of common source
Sense；
Inductance LS2HWith inductance LS2LRespectively silicon carbide MOSFET Q1And Q2Packaging pin common source parasitic inductance；
Resistance RG1HWith resistance RG1LRespectively silicon carbide MOSFET Q1And Q2Internal gate resistance；
Resistance Ron_H, resistance Roff_HRespectively silicon carbide MOSFET Q1Open resistance and shutdown resistance；
Resistance Ron_L, resistance Roff_LRespectively silicon carbide MOSFET Q2Open resistance and shutdown resistance.
2, drive circuit works principle
As shown in fig. 7, one switch periods of driving circuit of the present invention are divided into four-stage：(t1~t2)、(t2~
t3)、(t3~t4) and (t4~t5), the equivalent circuit diagram in each stage is as shown in figure 8, concrete analysis is as follows：
t1Before moment, it is assumed that circuit is in stable state.Driving circuit S2_HAnd S2_LIt is open-minded, Q1And Q2It is in shutdown
State, Q1Body diode D1Afterflow is carried out as fly-wheel diode.
(t1~t2)：Q1Driving circuit in switching tube S2_HIt is still within opening state, Q2Driving circuit in switching tube
S2_LShutdown, switching tube S1_LIt is open-minded, shown in this stage equivalent circuit such as Fig. 8 (a).This stage, Q2Into conducting state, and Q1One
Directly it is off state.Due to Q in this stage2Driving circuit in S2_LIt is off state, capacitance Ca1_LIt is not attached to out
It, will not be to Q in logical circuit2Speed of opening impact.In Q2In opening process, Q2With Q1Body diode D1When the change of current, electricity
The pace of change of stream is very fast, common source parasitic inductance LS1H、LS2H、LS1L、LS2LOn will produce voltage drop.Due to common source parasitic inductance
LS1HAnd LS1LAs the parasitic inductance on silicon carbide MOSFET encapsulation internal links circuit, inductance value is smaller, caused by ignoring it
It influences.In Q2Driving circuit in, capacitance Ca2_LWith common source parasitic inductance LS2L, voltage source-VSS_LForming circuit.If capacitance Ca2_L
It is sufficiently large, common source parasitic inductance LS2LOn voltage drop influence reduce.Equally, in Q1Driving circuit in, capacitance Ca2_HIt reduces
Common source parasitic inductance LS2HInfluence.Q2Q in the process opened1And Q2Drain-source voltage simultaneously when changing, junction capacity CGDH、CDSHWith
CGDL、CDSLCarry out charge and discharge.During this, Q1Junction capacity CGDHCharging current can flow through junction capacity CGSHBranch and drive
In dynamic circuit, if capacitance Ca1_HIt is sufficiently large, most of junction capacity CGDHCharging current will flow through capacitance Ca1_H.To sum up, Q1Grid source
Extremely upper due to voltage spikes will reduce, and realize the inhibition to cross-interference issue.
(t2~t3)：Q1Driving circuit in switching tube S2_HIt is still within cut-off state, Q2Driving circuit in switching tube
S1_LShutdown, switching tube S2_LIt is open-minded, shown in this stage equivalent circuit such as Fig. 8 (b).This stage, Q2Into off state, Q1Still
It is off state.Q2Driving circuit in S2_LIt is open-minded, capacitance Ca1_LWith shutdown resistance Roff_LIt is connected into turn-off circuit, because of electricity
Hold Ca1_LIt is larger, to Q2Turn-off speed influence it is negligible, Q2Turn-off speed mainly by shutdown resistance Roff_LIt adjusts.In Q2
Turn off process in, Q1And Q2Drain-source voltage simultaneously when changing, Q1Junction capacity CGDHDischarge current can flow through junction capacity CGSH
In branch and driving circuit, due to capacitance Ca1_HThe impedance in place circuit is small, so most of capacitance CGDHCharging current flow through
Ca1_H。Q2During shutdown, Q2With Q1Body diode D1When the change of current, electric current change dramatically, common source parasitic inductance LS1H、LS2H、
LS1L、LS2LOn will produce voltage drop, and due to capacitance Ca2_HAnd Ca2_LInfluence, common source parasitic inductance LS2HAnd LS1HTo crosstalk
The influence of problem reduces.
(t3~t4)：Q2Driving circuit in switching tube S1_LIt is still within cut-off state, Q1Driving circuit in switching tube
S2_HShutdown, switching tube S1_HIt is open-minded, shown in this stage equivalent circuit such as Fig. 8 (c).This stage Q1Into opening state, Q2Locate always
In off state.Since load current flows into bridge arm midpoint, Q1Opening process in, Q1With its body diode D1The change of current, Q1And Q2
Drain-source voltage it is substantially unchanged, basic no-voltage curent change in common source parasitic inductance and junction capacity, thus be not in string
Disturb problem.
(t4~t5)：Q2Driving circuit in switching tube S1_LIt is still within cut-off state, Q1Driving circuit in switching tube
S1_HShutdown, switching tube S2_HIt is open-minded, shown in this stage equivalent circuit such as Fig. 8 (d).This stage Q1Into off state, Q2Locate always
In off state.Q1Turn off process it is similar to its opening process, Q1With its body diode D1The change of current, Q1And Q2Drain-source voltage base
This unchanged, basic no-voltage curent change in source parasitic inductance and junction capacity, so being not in cross-interference issue.
3, the parameter of driving circuit calculates
Q1Parameter calculates in driving circuit：
1) capacitance Ca2_HCalculating
Capacitance Ca2_HEffect be reduce packaging pin on common source parasitic inductance LS2HInfluence.When electric current change dramatically
When, common source parasitic inductance LS2HUpper induction generates voltage drop and storage energy, at this time capacitance Ca2_HUpper voltage and energy are also therewith
Variation；As capacitance Ca2_HWhen sufficiently large, common source parasitic inductance LS2HWith Q1Driving circuit decouples, common source parasitic inductance LS2HInfluence
Reduce.
Set capacitance Ca2_HVoltage variety Δ vCa2_H＜ Δs VCa2_H(ΔVCa2_HFor setting value), then capacitance Ca2_HIt needs full
Condition shown in sufficient formula (1)：
In formula (1), IpeakFor current change quantity maximum value on common source inductance.
2) capacitance Ca1_HCalculating
Q1When there is cross-interference issue, capacitance Ca1_HIt is sufficiently large, most of junction capacity CGDHVariable-current will flow through capacitance
Ca1_H, rather than junction capacity CGSH, Q1Due to voltage spikes will reduce on grid source electrode.
Fig. 9 is Q1There is simple equivalent circuit when cross-interference issue.Assuming that switching moments Q1Drain-source voltage vDSHElectricity
Buckling rate κ is constant, Q2κ=κ when opening1, Q2κ=κ when shutdown2, Q is set forth in formula (2) and (3)2Q when opening1Grid source
The positive kurtosis v of pole tensionGSH(+)And Q2Q when shutdown1Gate-source voltage negative sense kurtosis vGSH(-).In order to ensure electric power
The reliability of electronic device, Q1Gate-source voltage forward direction kurtosis vGSH(+)Need to be less than the threshold voltage V of silicon carbide MOSFETth,
Negative sense kurtosis vGSH(-)It needs to be more than grid source electrode negative sense safe voltage VGS_MAX(-), as shown in formula (4).And according to formula (2) and (3)
It is found that negative voltage VSS_HFor Q1The kurtosis of gate-source voltage there is also influences, need to be according to formula (5) to VSS_HRange
It is selected.
ΔvGSH(+)-ΔvGSH(-)＜ Vth-VGS_MAX(-) (4)
VGS_MAX(-)-ΔvGSH(-)＜ VSS_H＜ Vth-ΔvGSH(+) (5)
In formula (2)-(3)：
ΔvGSH(+)For Q1Gate-source voltage positive change amount；
ΔvGSH(-)For Q1Gate-source voltage negative sense variable quantity；
a0=τd；
τa=Roff_HCa1_H；
τb=(RG1H+Roff_H)(CGSH+CGDH)；
τc=RG1HRoff_HCa1_H(CGSH+CGDH)；
τd=(RG1H+Roff_H)CGDH；
Q2Parameter calculates in driving circuit：
3) capacitance Ca2_LComputational methods
Capacitance Ca2_LEffect be reduce packaging pin on common source parasitic inductance LS2LInfluence.When electric current change dramatically
When, common source parasitic inductance LS2LUpper induction generates voltage drop and storage energy, at this time capacitance Ca2_LUpper voltage and energy are also therewith
Variation；As capacitance Ca2_LWhen sufficiently large, common source parasitic inductance LS2LWith Q2Driving circuit decouples, common source parasitic inductance LS2LInfluence
Reduce.Capacitance Ca2_LComputational methods and Ca2_HIt is identical.
4) capacitance Ca1_LCalculating
Q2When there is cross-interference issue, capacitance Ca1_LIt is sufficiently large, most of junction capacity CGDLVariable-current will flow through capacitance
Ca1_L, rather than junction capacity CGSL, Q2Due to voltage spikes will reduce on grid source electrode.Ca1_LComputational methods and Ca1_HIt is identical.
The content not being described in detail in this specification belongs to the prior art well known to professional and technical personnel in the field.
Claims (6)
1. a kind of driving circuit based on silicon carbide MOSFET, the silicon carbide MOSFET includes bridge arm upper tube Q1With bridge arm down tube
Q2；Inductance LS2HWith inductance LS2LRespectively Q1And Q2Packaging pin common source parasitic inductance；
The bridge arm upper tube Q1Driving circuit include voltage source VGS_H, switching tube S1_H, open resistance Ron_H, voltage source-
VSS_H, switching tube S2_HWith shutdown resistance Roff_H；
The voltage source VGS_HAnode with switching tube S1_HDrain electrode connection, the switching tube S1_HSource electrode and open grid electricity
Hinder Ron_HOne end connection, it is described to open resistance Ron_HThe other end and bridge arm upper tube Q1Grid connection；
The voltage source VGS_HCathode and voltage source-VSS_HAnode connection, the voltage source-VSS_HCathode and switching tube
S2_HSource electrode connection, the switching tube S2_HDrain electrode and shutdown resistance Roff_HOne end connection, the shutdown grid is electric
Hinder Roff_HThe other end and bridge arm upper tube Q1Grid connection, the inductance LS2HOne end and bridge arm upper tube Q1Source electrode connection,
The other end and the voltage source-VSS_HAnode connection；
The bridge arm down tube Q2Driving circuit include voltage source VGS_L, switching tube S1_L, open resistance Ron_L, voltage source-
VSS_L, switching tube S2_LWith shutdown resistance Roff_L；
The voltage source VGS_LAnode with switching tube S1_LDrain electrode connection, the switching tube S1_LSource electrode and open grid electricity
Hinder Ron_LOne end connection, it is described to open resistance Ron_LThe other end and bridge arm down tube Q2Grid connection；
The voltage source VGS_LCathode and voltage source-VSS_LAnode connection, the voltage source-VSS_LCathode and switching tube
S2_LSource electrode connection, the switching tube S2_LDrain electrode and shutdown resistance Roff_LOne end connection, the shutdown grid is electric
Hinder Roff_LThe other end and bridge arm down tube Q2Grid connection, the inductance LS2LOne end and bridge arm down tube Q2Source electrode connection,
The other end and the voltage source-VSS_LAnode connection；
It is characterized in that：
Different circuits is passed through in the circuit that turns on and off of the driving circuit of the silicon carbide MOSFET, further includes：Four capacitances
Ca1_H、Ca2_H、Ca1_LAnd Ca2_L,
Capacitance Ca2_HEffect be reduce packaging pin on common source parasitic inductance LS2HInfluence, the capacitance Ca2_HOne end with
With bridge arm upper tube Q1Source electrode connection, the other end with for provides turn off negative pressure voltage source-VSS_HCathode connection；
Capacitance Ca2_LEffect be reduce packaging pin on common source parasitic inductance LS2LInfluence, the capacitance Ca2_LOne end with
With bridge arm down tube Q2Source electrode connection, the other end with for provides turn off negative pressure voltage source-VSS_LCathode connection；
Capacitance Ca1_HEffect be in Q1When crosstalk occurs, for the grid drain junction capacitance C inside silicon carbide MOSFET encapsulationGDHFill
Discharge current provides more low-impedance circuit, the capacitance Ca1_HWith shutdown resistance Roff_HIt is in parallel；
Capacitance Ca1_LEffect be in Q2When crosstalk occurs, for the grid drain junction capacitance C inside silicon carbide MOSFET encapsulationGDLFill
Discharge current provides more low-impedance circuit, the capacitance Ca1_LWith shutdown resistance Roff_LIt is in parallel.
2. the driving circuit based on silicon carbide MOSFET as described in claim 1, it is characterised in that：
Q1Driving circuit open circuit pass through voltage source VGS_H, switching tube S1_HWith open resistance Ron_H；
Q1Driving circuit turn-off circuit pass through voltage source-VSS_H, switching tube S2_HWith shutdown resistance Roff_H；
Q2Driving circuit open circuit pass through voltage source VGS_L, switching tube S1_LWith open resistance Ron_L；
Q2Driving circuit turn-off circuit pass through voltage source-VSS_L, switching tube S2_LWith shutdown resistance Roff_L。
3. the driving circuit based on silicon carbide MOSFET as claimed in claim 1 or 2, it is characterised in that：Q1Driving circuit in
Switching tube S1_HWith switching tube S2_HDrive signal is complementary；
Q2Driving circuit in switching tube S1_LWith switching tube S2_LDrive signal is complementary.
4. the driving circuit based on silicon carbide MOSFET as claimed in claim 1 or 2, it is characterised in that：Q1Encapsulation inside packet
Include grid source junction capacitance CGSH, grid drain junction capacitance CGDHWith hourglass source electrode junction capacity CDSH；
Q2Encapsulation inside include grid source junction capacitance CGSL, grid drain junction capacitance CGDLWith hourglass source electrode junction capacity CDSL；
Q1And Q2The common source parasitic inductance of encapsulation internal connection line be respectively inductance LS1HWith inductance LS1L；
Q1And Q2Internal gate resistance is respectively resistance RG1HWith resistance RG1L。
5. the driving circuit based on silicon carbide MOSFET as claimed in claim 4, it is characterised in that：In Q1When crosstalk occurs, electricity
Hold Ca1_HIt is sufficiently large, make most of junction capacity CGDHVariable-current will flow through capacitance Ca1_H, rather than junction capacity CGSH, Q1Grid source
Extremely upper due to voltage spikes will reduce；
In Q2When crosstalk occurs, capacitance Ca1_LIt is sufficiently large, make most of junction capacity CGDLVariable-current will flow through capacitance Ca1_L, and
It is not junction capacity CGSL, Q2Due to voltage spikes will reduce on grid source electrode.
6. the driving circuit based on silicon carbide MOSFET as claimed in claim 4, it is characterised in that：When electric current change dramatically
When, common source parasitic inductance LS2HUpper induction generates voltage drop and storage energy, at this time capacitance Ca2_HUpper voltage and energy are also therewith
Variation, as capacitance Ca2_HWhen sufficiently large, common source parasitic inductance LS2HWith driving circuit Q1Decoupling, common source parasitic inductance LS2HInfluence
Reduce；
When electric current change dramatically, common source parasitic inductance LS2LUpper induction generates voltage drop and storage energy, at this time capacitance Ca2_L
Upper voltage and energy also change therewith, as capacitance Ca2_LWhen sufficiently large, common source parasitic inductance LS2LWith driving circuit Q2Decoupling, common source
Parasitic inductance LS2LInfluence reduce.
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Families Citing this family (25)
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Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10231198A1 (en) * | 2002-07-10 | 2004-01-29 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH | Method and circuit arrangement for limiting an overvoltage |
| KR101449083B1 (en) * | 2010-05-06 | 2014-10-13 | 엘에스산전 주식회사 | Switching Gate Drive |
| CN102545560B (en) * | 2011-12-15 | 2014-09-03 | 无锡中星微电子有限公司 | Power switch driver, IC chip, and DC-DC converter |
| JP2015154591A (en) * | 2014-02-14 | 2015-08-24 | ローム株式会社 | Gate drive circuit and power supply device |
| CN104883038B (en) * | 2015-06-15 | 2017-12-12 | 山东大学 | A kind of half-bridge circuit and its method that half-bridge circuit driver is turned off using negative pressure |
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