CN109446595B - Method for extracting parasitic parameters of silicon carbide inverter - Google Patents
Method for extracting parasitic parameters of silicon carbide inverter Download PDFInfo
- Publication number
- CN109446595B CN109446595B CN201811178833.1A CN201811178833A CN109446595B CN 109446595 B CN109446595 B CN 109446595B CN 201811178833 A CN201811178833 A CN 201811178833A CN 109446595 B CN109446595 B CN 109446595B
- Authority
- CN
- China
- Prior art keywords
- parasitic
- inverter
- bridge arm
- silicon carbide
- parameters
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/36—Circuit design at the analogue level
- G06F30/367—Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
- G06F30/398—Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Evolutionary Computation (AREA)
- Geometry (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inverter Devices (AREA)
Abstract
The invention discloses a method for extracting parasitic parameters of a silicon carbide inverter, which comprises the following steps: obtaining physical structure parameters of the silicon carbide inverter, and establishing a three-dimensional model of the inverter so as to obtain a basic three-dimensional model; setting material properties of a conductor and a current inflow position and a current outflow position in the basic three-dimensional model; simulating the operation condition of the circuit to extract parasitic inductance and parasitic resistance; setting material properties of conductors in the basic three-dimensional model, and respectively setting voltage differences between a positive direct current bus and a reference ground, between a negative direct current bus and the reference ground and between the middle point of each bridge arm of the inverter and a radiator; the circuit behavior is simulated to extract the parasitic capacitance. The invention can accurately extract the parasitic parameters of the inverter by a software simulation method in the design process of the inverter so as to reduce the production cost and shorten the manufacturing period.
Description
Technical Field
The invention belongs to the field of inverters, and particularly relates to a method for extracting parasitic parameters of a silicon carbide inverter.
Background
The wide-bandgap semiconductor silicon carbide (SiC) power device has the advantages of high power density, small switching loss, suitability for high-frequency work, good high-temperature stability and the like, the silicon carbide power electronic device is rapidly developed in the last decade, and mainstream semiconductor manufacturers all invest in related research, development and production. However, since silicon carbide devices switch at a high speed, the resulting voltage spikes may affect the driving signals and even endanger equipment and personal safety. Therefore, it is necessary to extract the parasitic parameters inside the inverter and determine the measures to be taken to reduce the parasitic parameters, so as to improve the electromagnetic compatibility.
At present, instruments such as an impedance analyzer are often used for accurately extracting parasitic parameters of the inverter after inverter finished products are processed, and corresponding measures are not taken in the design process, so that the production cost is increased, the rework probability is increased, and the manufacturing period is prolonged.
Disclosure of Invention
Aiming at the defects and improvement requirements of the prior art, the invention provides a method for extracting parasitic parameters of a silicon carbide inverter, and aims to accurately extract the parasitic parameters of the inverter by a software simulation method in the design process of the inverter so as to reduce the production cost and shorten the manufacturing period.
In order to achieve the above object, the present invention provides a method for extracting parasitic parameters of a silicon carbide inverter, comprising the steps of:
(1) Obtaining physical structure parameters of the silicon carbide inverter, and establishing a three-dimensional model of the inverter so as to obtain a basic three-dimensional model;
(2) Setting material properties of a conductor and a current inflow position and a current outflow position in the basic three-dimensional model; simulating the operation condition of the circuit to extract parasitic inductance and parasitic resistance of the positive and negative polar plates of the direct-current bus and parasitic inductance and parasitic resistance of each switching tube;
(3) Setting material properties of conductors in the basic three-dimensional model, and respectively setting voltage differences between a positive direct current bus and a reference ground, between a negative direct current bus and the reference ground and between the middle point of each bridge arm of the inverter and a radiator; simulating the operation condition of the circuit to extract the parasitic capacitance between the positive direct current bus and the reference ground, between the negative direct current bus and the reference ground and between the middle point of each bridge arm of the inverter and the radiator;
each switch tube in the silicon carbide inverter is a silicon carbide MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor).
Further, in the step (2), extracting parasitic inductance and parasitic resistance of the positive and negative plates of the dc bus, and parasitic inductance and parasitic resistance of each switching tube, includes:
for any phase of bridge arm, dividing a bridge arm part between a drain electrode of a switch tube on the bridge arm and a positive direct-current bus into a first section, dividing a bridge arm part between a source electrode of the switch tube on the bridge arm and a middle point of the bridge arm into a second section, dividing a bridge arm part between a drain electrode of a switch tube under the bridge arm and the middle point of the bridge arm into a third section, and dividing a bridge arm part between a source electrode of the switch tube under the bridge arm and the negative direct-current bus into a fourth section; parasitic parameters of each section are respectively extracted;
because the operation condition of the switching tube is difficult to simulate accurately, each bridge arm is divided into a plurality of segments without the switching tube, and the parasitic parameters of each segment of the bridge arm are extracted by adopting a segment extraction method, so that the accuracy of the extracted parasitic parameters can be improved.
Further, in the step (2) and the step (3), the material property of the conductor is the conductivity of the conductor; because the conductors made of different materials have different conductivities, and the conductivities are very important parameters in the process of extracting the parasitic parameters, the setting of the properties of the conductor materials is completed by setting the conductivities of the conductors, and the accuracy of the extracted parasitic parameters can be improved.
Further, in the step (1), three-dimensional modeling software adopted when the three-dimensional model of the inverter is established is Solidworks; the Solidworks uses Windows OLE technology, visual design technology, advanced parasolid kernel and good integration technology with third-party software, and has various components, so that the functions are comprehensive, and the internal structure of the SiC MOSFET can be accurately modeled, thereby ensuring the accuracy of the extracted parasitic parameters.
Further, in the step (2), when extracting parasitic inductance and parasitic resistance of the positive and negative electrode plates of the direct-current busbar and parasitic inductance and parasitic resistance of each switching tube, an adopted finite element field solver is Ansys Q3D; the Ansys Q3D is quasi-static electromagnetic field simulation software, can provide accurate simulation results in a specific frequency range, and can improve the accuracy of extracting parasitic parameters by adopting the Ansys Q3D to extract parasitic resistance and parasitic inductance in an inverter.
Furthermore, in the step (3), when extracting the parasitic capacitances between the positive direct current bus and the reference ground, between the negative direct current bus and the reference ground, and between the midpoint of each bridge arm of the inverter and the radiator, the adopted electromagnetic field analysis software is Ansoft Maxwell; the Ansoft Maxwell is provided with a directed user interface, a precision-driven self-adaptive subdivision technology and a powerful post-processor, electromagnetic analysis is carried out by using the Ansoft Maxwell, parasitic capacitance is extracted, and the accuracy of the extracted parasitic capacitance can be ensured.
Generally, by the above technical solution conceived by the present invention, the following beneficial effects can be obtained:
(1) According to the method for extracting the parasitic parameters of the silicon carbide inverter, the three-dimensional model of the inverter is established according to the physical structure parameters of the silicon carbide inverter, the parasitic resistance, the parasitic inductance and the parasitic capacitance in the inverter are further extracted respectively through simulation, and the parasitic parameters of the inverter can be extracted in the design process of the silicon carbide inverter, so that the rework probability is greatly reduced in the process of researching and developing the actual structure, the manufacturing period is shortened, and the manufacturing cost is reduced.
(2) According to the method for extracting the parasitic parameters of the silicon carbide inverter, when the parasitic resistance and the parasitic inductance of the inverter are extracted, each bridge arm is divided into a plurality of sections without a switching tube, the parasitic parameters of each section of the bridge arm are extracted by adopting a section extraction method, and the accuracy of the extracted parasitic parameters can be improved by adopting the section extraction method due to the fact that the operation condition of the switching tube is difficult to simulate accurately.
(3) According to the method for extracting the parasitic parameters of the silicon carbide inverter, the properties of the conductor materials are set by setting the conductivity of the conductors, and the conductors made of different materials have different conductivities, and the conductivities are very important parameters in the process of extracting the parasitic parameters, so that the accuracy of the extracted parasitic parameters can be improved.
Drawings
FIG. 1 is a schematic illustration of parasitic parameters in a silicon carbide inverter provided in accordance with an embodiment of the present invention;
FIG. 2 is a flowchart of a method for extracting parasitic parameters of a silicon carbide inverter according to an embodiment of the present invention;
FIG. 3 is a schematic three-dimensional model of a leg of a silicon carbide inverter provided in accordance with an embodiment of the present invention;
FIG. 4 is an equivalent circuit diagram of one leg of a silicon carbide inverter according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of the excitation applied when extracting the gate parasitic inductance and parasitic resistance of the switching tube on the bridge arm according to the embodiment of the present invention;
the same reference numbers will be used throughout the drawings to refer to the same or like elements or structures, wherein:
1 is an AC output end, 2 is a DC-end, 3 is a DC + end, 4 is a switch tube gate extreme on a bridge arm, 5 is a switch tube source extreme on the bridge arm, 6 is a switch tube gate extreme under the bridge arm, 7 is a source end of a lower bridge arm, 8 is a current inflow position, and 9-14 are current outflow positions.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
In the present invention, the physical structure of the silicon carbide inverter and the parasitic parameters to be extracted are shown in fig. 1, wherein the switching tubes on the three-phase bridge arm are all silicon carbide (SiC) MOSFETs (Metal-Oxide-Semiconductor Field-Effect transistors), and the parasitic parameters to be extracted specifically include: parasitic inductances Lm1 and Lm2 of the positive plate and the negative plate of the direct-current busbar and parasitic resistances Rm1 and Rm2; parasitic inductances Lg 1-Lg 6, ls 1-Ls 6 and Ld 1-Ld 6 of internal bonding wires of the silicon carbide MOSFETs, and parasitic resistances Rg 1-Rg 6, rs 1-Rs 6 and Rd 1-Rd 6; parasitic capacitances Cn1, cn2 between the positive and negative dc buses and a reference ground; parasitic capacitances Cp1 to Cp3 between the radiator and the midpoint of each arm composed of SiC MOSFETs.
The method for extracting parasitic parameters of the silicon carbide inverter provided by the invention is further described below by taking a silicon carbide inverter composed of SiC MOSFETs with the model number of CAS300M12BM2 as an example.
The method for extracting the parasitic parameters of the silicon carbide inverter, as shown in fig. 2, comprises the following steps:
(1) Obtaining physical structure parameters of the silicon carbide inverter, and establishing a three-dimensional model of the inverter so as to obtain a basic three-dimensional model;
in an optional embodiment, the three-dimensional modeling software adopted when the three-dimensional model of the inverter is established is Solidworks; the Solidworks uses Windows OLE technology, visual design technology, advanced parasolid kernel and good integration technology with third-party software, and has various components, so that the functions are comprehensive, and the internal structure of the SiC MOSFET can be accurately modeled, thereby ensuring the accuracy of the extracted parasitic parameters; the three-dimensional model of one bridge arm of the silicon carbide inverter is shown in fig. 3, wherein each switching tube is formed by connecting six SiC MOSFET chips with six freewheeling diodes (FWDs) in an anti-parallel mode, and a corresponding equivalent circuit diagram is shown in fig. 4; because the three-phase bridge arms have the same structure, a three-dimensional model of one bridge arm and a corresponding equivalent circuit diagram are taken as an example for explanation; in fig. 3 and 4, the DC + terminal 3 is externally connected to the positive electrode of the DC power supply, the DC-terminal 2 is externally connected to the negative electrode of the DC power supply, the gate terminal 6 and the source terminal 7 of the switching tube under the bridge arm function as an external driving board and measure, and the gate terminal 7 of the switching tube under the bridge arm is connected to the DC-terminal 2; a gate electrode terminal 4 and a source electrode terminal 5 of a switching tube on the bridge arm are used for externally connecting a driving plate and measuring, and the source electrode terminal 5 of the switching tube on the bridge arm is connected with the output end 1;
(2) Setting material properties of the conductor and current inflow and outflow positions in the basic three-dimensional model; simulating the operation condition of the circuit to extract parasitic inductance and parasitic resistance of the positive and negative polar plates of the direct-current bus and parasitic inductance and parasitic resistance of each switching tube;
in an optional embodiment, when extracting parasitic inductance and parasitic resistance of the positive and negative electrode plates of the direct-current busbar and parasitic inductance and parasitic resistance of each switching tube, an adopted finite element field solver is Ansys Q3D; Q3D is quasi-static electromagnetic field simulation software, can provide accurate simulation results in a specific frequency range, adopts Ansys Q3D to extract parasitic resistance and parasitic inductance in the inverter, and can improve the accuracy of extracting parasitic parameters;
when using Ansys Q3D to extract parameters, the positions of current inflow and outflow need to be set, and then a corresponding network is generated for simulation; taking the extraction of the gate pole counting inductance and the parasitic resistance of the switching tube on the bridge arm as an example, setting the gate pole 4 of the switching tube on the bridge arm as a current inflow position 8, and setting the connection point of each silicon carbide MOSFET forming the switching tube on the bridge arm and the gate pole 4 of the switching tube on the bridge arm as current outflow positions 9-14, as shown in FIG. 5; in Ansys Q3D, setting a current inflow position 8 as a source of a network, setting current outflow positions 9-14 as sinks of the network, then automatically generating the network by utilizing software, setting solving types as alternating current resistance and inductance in solving setting, setting solving frequency as 1MHz, then starting to operate a simulation function of an Ansys Q3D, and calculating parasitic parameters of the circuit under a specific operation condition by using the Ansys Q3D;
in an optional embodiment, extracting parasitic inductance and parasitic resistance of the positive and negative plates of the dc bus, and parasitic inductance and parasitic resistance of each switching tube includes:
for any phase of bridge arm, dividing a bridge arm part between a drain electrode of a switch tube on the bridge arm and a positive direct-current bus into a first section, dividing a bridge arm part between a source electrode of the switch tube on the bridge arm and a middle point of the bridge arm into a second section, dividing a bridge arm part between a drain electrode of a switch tube under the bridge arm and the middle point of the bridge arm into a third section, and dividing a bridge arm part between a source electrode of the switch tube under the bridge arm and the negative direct-current bus into a fourth section; respectively extracting parasitic parameters of each section;
because the running condition of the switching tube is difficult to simulate accurately, each bridge arm is divided into a plurality of sections without the switching tube, and the parasitic parameters of each section of the bridge arm are respectively extracted by adopting a section extraction method, so that the accuracy of the extracted parasitic parameters can be improved;
(3) Setting material properties of conductors in the basic three-dimensional model, and respectively setting voltage differences between a positive direct current bus and a reference ground, between a negative direct current bus and the reference ground and between the middle point of each bridge arm of the inverter and a radiator; simulating the operation condition of the circuit to extract the parasitic capacitance between the positive direct current bus and the reference ground, between the negative direct current bus and the reference ground and between the middle point of each bridge arm of the inverter and the radiator;
in an optional embodiment, when extracting parasitic capacitances between the positive direct current bus and a reference ground, between the negative direct current bus and the reference ground, and between the midpoint of each bridge arm of the inverter and the radiator, the adopted electromagnetic field analysis software is Ansoft Maxwell; the Ansoft Maxwell is provided with a directed user interface, a precision-driven self-adaptive subdivision technology and a powerful post-processor, electromagnetic analysis is carried out by using the Ansoft Maxwell, parasitic capacitance is extracted from the electromagnetic analysis, and the accuracy of the extracted parasitic capacitance can be ensured;
in the above embodiment, in the step (2) and the step (3), the material property of the conductor provided is the conductor conductivity; because conductors made of different materials have different conductivities, and the conductivities are very important parameters in the process of extracting parasitic parameters, the setting of the properties of conductor materials is completed by setting the conductivities of the conductors, and the accuracy of the extracted parasitic parameters can be improved.
In extracting parasitic parameters of the silicon carbide inverter by using the method, an optional implementation process is as follows:
(1) Obtaining physical structure parameters of the silicon carbide inverter, and establishing a three-dimensional model of the inverter by utilizing Solidworks so as to obtain a basic three-dimensional model; exporting the basic three-dimensional model to a file in an 'x _ t' format;
(2) Importing the x _ t format file stored with the basic three-dimensional model into Ansys Q3D; setting the conductivity of the conductor in the Ansys Q3D according to the material of the conductor, and setting a current inflow position and a current outflow position in the Ansys Q3D; simulating the operation condition of the circuit, and extracting parasitic inductance and parasitic resistance of positive and negative plates of the direct-current busbar and parasitic inductance and parasitic resistance of each switching tube by a sectional extraction method;
(3) Importing the 'x _ t' format file stored with the basic three-dimensional model into Ansoft Maxwell; the method comprises the steps that the conductivity of a conductor is set in an Ansoft Maxwell according to the material of the conductor, and voltage differences between a direct current bus and a reference ground, between a negative direct current bus and the reference ground and between the middle point of each bridge arm of an inverter and a radiator are set in the Ansoft Maxwell respectively; and simulating the operation condition of the circuit to extract the parasitic capacitance between the positive direct current bus and the reference ground, between the negative direct current bus and the reference ground and between the middle point of each bridge arm of the inverter and the radiator.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (5)
1. A method for extracting parasitic parameters of a silicon carbide inverter, comprising the steps of:
(1) Obtaining physical structure parameters of the silicon carbide inverter, and establishing a three-dimensional model of the inverter so as to obtain a basic three-dimensional model;
(2) Setting material properties of a conductor and a current inflow position and a current outflow position in the basic three-dimensional model; simulating the operation condition of the circuit to respectively extract the parasitic inductance and the parasitic resistance of the positive and negative polar plates of the direct-current bus and the parasitic inductance and the parasitic resistance of each switching tube;
(3) Setting material properties of conductors in the basic three-dimensional model, and respectively setting voltage differences between a positive direct current bus and a reference ground, between a negative direct current bus and the reference ground and between the middle point of each bridge arm of the inverter and a radiator; simulating the operation condition of the circuit to extract the parasitic capacitance between the positive direct current bus and the reference ground, between the negative direct current bus and the reference ground and between the middle point of each bridge arm of the inverter and the radiator;
each switch tube in the silicon carbide inverter is a silicon carbide MOSFET; in the step (2), extracting parasitic inductance and parasitic resistance of the positive and negative plates of the dc bus, and parasitic inductance and parasitic resistance of each switching tube, includes:
for any phase of bridge arm, dividing a bridge arm part between a drain electrode of a switch tube on the bridge arm and a positive direct-current bus into a first section, dividing a bridge arm part between a source electrode of the switch tube on the bridge arm and a middle point of the bridge arm into a second section, dividing a bridge arm part between a drain electrode of a switch tube under the bridge arm and the middle point of the bridge arm into a third section, and dividing a bridge arm part between a source electrode of the switch tube under the bridge arm and the negative direct-current bus into a fourth section; parasitic parameters of each segment are extracted separately.
2. The method of extracting parasitic parameters of a silicon carbide inverter as claimed in claim 1, wherein in the step (2) and the step (3), the material property of the conductor provided is the electrical conductivity of the conductor.
3. The method for extracting parasitic parameters of a silicon carbide inverter as claimed in claim 1, wherein in the step (1), the three-dimensional modeling software used for building the three-dimensional model of the inverter is Solidworks.
4. The method for extracting parasitic parameters of a silicon carbide inverter as claimed in claim 1, wherein in the step (2), when the parasitic inductance and the parasitic resistance of the positive and negative plates of the dc bus bar and the parasitic inductance and the parasitic resistance of each switching tube are respectively extracted, a finite element field solver adopted is Ansys Q3D.
5. The method for extracting parasitic parameters of the silicon carbide inverter as claimed in claim 1, wherein in the step (3), when extracting parasitic capacitances between the positive direct current bus and the reference ground, between the negative direct current bus and the reference ground, and between the midpoint of each bridge arm of the inverter and the radiator, the electromagnetic field analysis software is Ansoft Maxwell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811178833.1A CN109446595B (en) | 2018-10-10 | 2018-10-10 | Method for extracting parasitic parameters of silicon carbide inverter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811178833.1A CN109446595B (en) | 2018-10-10 | 2018-10-10 | Method for extracting parasitic parameters of silicon carbide inverter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109446595A CN109446595A (en) | 2019-03-08 |
| CN109446595B true CN109446595B (en) | 2023-04-07 |
Family
ID=65544891
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811178833.1A Active CN109446595B (en) | 2018-10-10 | 2018-10-10 | Method for extracting parasitic parameters of silicon carbide inverter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109446595B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111624407A (en) * | 2020-04-08 | 2020-09-04 | 南京航空航天大学 | Method for extracting parasitic parameters of DC/DC converter |
| CN113158605B (en) * | 2021-03-10 | 2024-02-13 | 南京工程学院 | SiC MOSFET near-zone electromagnetic field modeling method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104133955B (en) * | 2014-07-25 | 2017-12-05 | 中山大学 | A kind of method for extracting circuit parasitic parameter |
| CN106100297B (en) * | 2016-08-02 | 2018-08-31 | 北京交通大学 | Driving circuit based on silicon carbide MOSFET |
-
2018
- 2018-10-10 CN CN201811178833.1A patent/CN109446595B/en active Active
Non-Patent Citations (1)
| Title |
|---|
| 基于碳化硅功率器件的宽输入电压双管正激式直流电源研究;王长庚等;《电源学报》;第14卷(第04期);52-58 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109446595A (en) | 2019-03-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110765601B (en) | IGBT junction temperature estimation method based on IGBT thermoelectric coupling model | |
| Lai et al. | Inverter EMI modeling and simulation methodologies | |
| Li et al. | Achieving zero switching loss in silicon carbide MOSFET | |
| CN109783885B (en) | Multi-physical field coupling simulation analysis method and system for intelligent power module | |
| Kovacevic-Badstuebner et al. | Parasitic extraction procedures for SiC power modules | |
| Zhang et al. | Parasitic inductance modeling and reduction for wire-bonded half-bridge SiC multichip power modules | |
| CN111368454B (en) | SiC MOSFET SPICE model establishment method based on bare chip packaging structure | |
| CN109446595B (en) | Method for extracting parasitic parameters of silicon carbide inverter | |
| CN108267680B (en) | Inductance extraction method and device based on IGBT device turn-off | |
| Fu et al. | Parasitic modeling for accurate inductive switching simulation of converters using SiC devices | |
| Chen et al. | Modeling and simulation of 2 kV 50 A SiC MOSFET/JBS power modules | |
| Liu et al. | A new characterization technique for extracting parasitic inductances of fast switching power MOSFETs using two-port vector network analyzer | |
| Bahman et al. | Electrical parasitics and thermal modeling for optimized layout design of high power SiC modules | |
| Kovačević-Badstübner et al. | A more accurate electromagnetic modeling of WBG power modules | |
| Kovacevic-Badstuebner et al. | Highly accurate virtual dynamic characterization of discrete SiC power devices | |
| Liu et al. | Extracting parasitic inductances of IGBT power modules with two-port S-parameter measurement | |
| Mermet-Guyennet et al. | Electrical analysis and packaging solutions for high-current fast-switching SiC components | |
| Xu et al. | Design, implementation, and validation of electro-thermal simulation for SiC MOSFETs in power electronic systems | |
| Hillenbrand et al. | Sensitivity analysis of behavioral MOSFET models in transient EMC simulation | |
| Kovacevic-Badstuebner et al. | Tools for broadband electromagnetic modeling of power semiconductor packages and external circuit layouts | |
| CN116822449A (en) | SiC MOSFET module simulation model modeling method and application thereof | |
| WO2022227657A1 (en) | Electric thermal performance analysis method and system of intelligent power unit and computer device | |
| CN108279333B (en) | Inductance extraction method and device based on IGBT device | |
| CN116306438A (en) | CM-EMI modeling method based on silicon carbide power converter system, system and equipment thereof | |
| Zhao et al. | Extraction of voltage-dependent capacitances of SiC device through inductive coupling method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |