CN113158605B - SiC MOSFET near-zone electromagnetic field modeling method - Google Patents
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- 230000005672 electromagnetic field Effects 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 21
- 230000005684 electric field Effects 0.000 claims abstract description 32
- 230000006698 induction Effects 0.000 claims abstract description 22
- 235000013599 spices Nutrition 0.000 claims abstract description 12
- 238000004088 simulation Methods 0.000 claims abstract description 4
- 238000000354 decomposition reaction Methods 0.000 claims abstract description 3
- 238000010183 spectrum analysis Methods 0.000 claims abstract description 3
- 239000013598 vector Substances 0.000 claims description 18
- 230000035699 permeability Effects 0.000 claims description 3
- 230000003068 static effect Effects 0.000 claims description 2
- 238000012827 research and development Methods 0.000 abstract description 6
- 238000002474 experimental method Methods 0.000 abstract description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 27
- 229910010271 silicon carbide Inorganic materials 0.000 description 26
- 238000013461 design Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 241000282414 Homo sapiens Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/36—Circuit design at the analogue level
- G06F30/367—Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
- G06F17/10—Complex mathematical operations
- G06F17/11—Complex mathematical operations for solving equations, e.g. nonlinear equations, general mathematical optimization problems
- G06F17/12—Simultaneous equations, e.g. systems of linear equations
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
- G06F17/10—Complex mathematical operations
- G06F17/11—Complex mathematical operations for solving equations, e.g. nonlinear equations, general mathematical optimization problems
- G06F17/13—Differential equations
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
Abstract
The invention discloses a near-zone electromagnetic field modeling method of a SiC MOSFET, which comprises the following steps: establishing a spice model, and establishing a simulation circuit according to the spice model to obtain time domain currents of three pins of the SiC Mosfet; performing Fourier decomposition and spectrum analysis on the time domain current of the pin, and decomposing the time domain current into sinusoidal components with different frequencies; solving the dynamic bit of each sinusoidal component along the pin direction to obtain the dynamic bit of each sinusoidal component; based on the dynamic bit, calculating the magnetic induction intensity and the electric field intensity caused by sinusoidal components of each frequency, and calculating the magnetic field intensity by the magnetic induction intensity; accumulating the magnetic field intensity and the electric field intensity caused by the sinusoidal components of each frequency respectively to obtain the near-area magnetic field intensity and the electric field intensity of each pin; and correcting and superposing the electromagnetic fields of the three pins according to the three-dimensional distribution of the pins of the SiC MOSFET, and deducing the near-area electromagnetic field of the SiC MOSFET. The near-area electromagnetic field of the device can be predicted in the research and development period, so that the experiment times are reduced, and the research and development cost is reduced.
Description
Technical Field
The invention relates to the technical field of power electronics electromagnetic radiation, in particular to a near-zone electromagnetic field modeling method of a SiC MOSFET.
Background
In recent years, the rapid development of smart grids and distributed energy sources drives continuous breakthrough of power electronic equipment and devices. The wide band gap semiconductor is a third generation semiconductor device developed after the first generation silicon semiconductor and the second generation gallium carbide compound semiconductor, and the most representative is a silicon carbide (SiC) device. Compared with the common Si device, the SiC power device has the advantages of high voltage resistance, low on-state resistance, small switching loss and higher switching frequency and working temperature. However, the increase of the switching frequency can generate stronger electromagnetic radiation, and electromagnetic interference is caused to nearby signal lines and power electronic devices, so that the safety and reliability of electromagnetic sensitive equipment and products are damaged, and adverse effects are caused to human beings and ecology.
Electromagnetic interference of power electronic equipment and devices is continuously increased, but domestic and international electromagnetic compatibility standards are more and more strict, which puts higher requirements on electromagnetic design of power electronics. The design of the power electronic electromagnetic compatibility mainly depends on the design experience of engineers, and electromagnetic compatibility experiments are carried out in a laboratory for many times after products are designed, so that the problems of the experiments are solved, the experiments are carried out again, the design period is long, and the research and development cost is high.
Disclosure of Invention
The invention aims to provide a near-area electromagnetic field modeling method for a SiC MOSFET, which can predict the near-area electromagnetic field of a device during research and development, so that the experiment times are reduced, and the research and development cost is reduced.
The invention adopts the following technical scheme for realizing the purposes of the invention:
the invention provides a near-zone electromagnetic field modeling method of a SiC MOSFET, which comprises the following steps:
establishing a spice model, and establishing a simulation circuit according to the spice model to obtain time domain currents of three pins of the SiC Mosfet;
performing Fourier decomposition and spectrum analysis on the time domain current of the pin, and decomposing the time domain current into sinusoidal components with different frequencies;
solving the dynamic bit of each sinusoidal component along the pin direction to obtain the dynamic bit of each sinusoidal component;
based on the dynamic bit, calculating the magnetic induction intensity and the electric field intensity caused by sinusoidal components of each frequency, and calculating the magnetic field intensity by the magnetic induction intensity;
accumulating the magnetic field intensity and the electric field intensity caused by the sinusoidal components of each frequency respectively to obtain the near-area magnetic field intensity and the electric field intensity of each pin;
and correcting and superposing the electromagnetic fields of the three pins according to the three-dimensional distribution of the pins of the SiC MOSFET, and deducing the near-area electromagnetic field of the SiC MOSFET.
Further, the spice model is built according to a model and a data manual of the switching device, and comprises a static model and a dynamic model of the power device.
Further, solving a dynamic bit for each sinusoidal component along the pin direction to obtain a dynamic bit formula for each sinusoidal component as follows:
wherein: (x, y, z) is a field point in space; mu is magnetic permeability; l is the length of a Mosfet pin; />A kth sinusoidal component of the conduction current on the pin; />Is a dynamic bit.
Further, the formula for calculating the magnetic induction intensity is:
wherein:is the magnetic induction vector x-axis component; />Is the magnetic induction vector y-axis component; />Is the magnetic induction vector z-axis component; e, e x 、e y 、e z Unit vectors in the x, y and z axis directions respectively;
the kth sinusoidal component on the pin induces magnetic induction at the field point (x, y, z) as follows:
wherein: omega k Angular frequency for the kth sinusoidal component;is the magnetic induction intensity.
Further, the formula for calculating the magnetic field strength from the magnetic induction strength is as follows:
wherein: h is the magnetic field strength.
Further, the formula for calculating the electric field strength caused by sinusoidal components of each frequency is as follows:
wherein:is the x-axis component of the electric field intensity vector; />Is the x-axis component of the electric field intensity vector; />Is the x-axis component of the electric field intensity vector; e, e x 、e y 、e z Unit vectors in the x, y and z axis directions respectively;
G 1 、G 2 、G 3 for the intermediate quantity, the following is satisfied:
the kth sinusoidal component on the pin causes an electric field strength vector at the field point (x, y, z) of:
further, the magnetic field intensity and the electric field intensity caused by the sinusoidal components of each frequency are respectively accumulated, and the formulas of the near-area magnetic field intensity and the electric field intensity of each pin are obtained as follows:
wherein: h is the magnetic field intensity of the near zone caused by the total current on the pin; h k The magnetic field intensity of the near zone caused by the kth sinusoidal component on the pin; e is the near field strength caused by the total current on the pin; e (E) k The near field strength caused by the kth sinusoidal component on the pin.
Further, according to the three-dimensional distribution of the pins of the SiC MOSFET, the formula for correcting and superposing the electromagnetic fields of the three pins is as follows:
wherein: d, d gd Is the distance between the gate pin and the drain pin; d, d ds Is the distance between the drain lead and the source lead; h g 、H d 、H s The magnetic field intensity caused by currents on the grid pin, the drain pin and the source pin respectively; e (E) g 、E d 、E s Near field strength due to total current on gate pin, drain pin and source pin, respectively
The beneficial effects of the invention are as follows:
the invention combines the method of the circuit and the electric field, and the field circuit cooperatively establishes an accurate calculation model of the electric field intensity and the magnetic field intensity of the near field region of the SiC MOSFET.
The spice model of the power device is adopted, dynamic characteristics and switching waveforms of the power device and electromagnetic fields caused by the dynamic characteristics and the switching waveforms can be represented, and accuracy of the model is improved.
The complex time domain current is decomposed into currents with different frequencies in the frequency domain, so that the complex time domain current is simplified, and the electric field component and the magnetic field component are calculated through the currents with different frequencies, so that the modeling difficulty is reduced on the premise of ensuring the accuracy.
Based on Maxwell's equation set, the near-field electromagnetic field on each pin of the SiC MOSFET is solved through dynamic bits, and is superimposed, so that the electromagnetic field of the three-dimensional near-field region can be modeled, visualization can be further realized through programming calculation, the electromagnetic field is visually represented, the guidance effect on electromagnetic compatibility design is achieved, the research and development period is reduced, and the design cost is reduced.
Drawings
FIG. 1 is a spice model diagram of a SiC MOSFET in a near-zone electromagnetic field modeling method of the SiC MOSFET according to an embodiment of the invention;
FIG. 2 is a diagram of the dimensions of a SiC MOSFET package in a method for modeling a near-field electromagnetic field of a SiC MOSFET according to an embodiment of the invention;
FIG. 3 is a circuit diagram of a SiC MOSFET in a method for modeling a near-field electromagnetic field of the SiC MOSFET according to an embodiment of the invention;
FIG. 4 is a current diagram of a SiC MOSFET pin in a SiC MOSFET near field electromagnetic field modeling method provided in accordance with an embodiment of the present invention;
FIG. 5 is a graph of a drain pin circuit of a SiC MOSFET in a near field electromagnetic field modeling method of the SiC MOSFET according to an embodiment of the invention;
fig. 6 is an IPP65R190C7 package size diagram in a SiC MOSFET near field electromagnetic field modeling method according to an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention provides a near field electromagnetic field modeling method of a SiC MOSFET, which takes an IPP65R190C7 type SiC MOSFET of Infineon company as an example to establish a near field electromagnetic field model, and comprises the following specific steps:
1. and establishing a corresponding spice model according to the model of the switching device and a data manual.
2. Establishing a simulation circuit shown in fig. 3 by using the spice model in the step 1 to obtain the time domain gate current I of three pins of the SiC Mosfet g Drain current I d Source current I s As shown in fig. 4.
3. Fourier decomposing and spectrum analyzing the three-terminal current to obtain I g 、I d 、I s Is decomposed into the sum of various sinusoidal currents. As shown in FIG. 5, at I d For example, the drain current can be substantially decomposed into
I d ＝0.043sin(ω 1 t+2.71)+0.021sin(ω 2 t+0.58)+0.0079sin(ω 4 t+5.89)+0.0098sin(ω 5 t+3.74)
Wherein omega 1 ＝20000π,ω 2 ＝40000π,ω 4 ＝80000π,ω 5 ＝100000π
4. Integrating the sinusoidal components of each current along the pin direction (vertical direction), and solving a dynamic bit to obtain a dynamic bit caused by the sinusoidal components of each current, wherein the dynamic bit is as follows:
in the above formula, (x, y, z) is the field point in space, μ is the permeability, mosfet pin length l=0.014m, i is the current conducted on the pin.
5. Calculating the magnetic induction caused by the sinusoidal current component at the spatial coordinates (0.05,0.05,0.11) at time t=1s
B x ＝3.9047×10 -14 T
B y ＝-3.9047×10 -14 T
B z ＝0T
6. Calculating magnetic field strength from magnetic induction strength
7. Calculating the electric field strength induced at the spatial coordinates (0.05,0.05,0.11) of the sinusoidal current component at time t=1s
At time t=1s, the electric field strength at the spatial coordinates (0.05,0.05,0.11) is:
E＝(-2.2101×10 -8 e x -2.2101×10 -8 e y -1.9603×10 -6 e z )N/C
according to the above procedure, the magnetic field intensity (unit: T) and electric field intensity (unit N/C) at the spatial coordinates (0.05,0.05,0.11) can be calculated as:
H 2 ＝-1.2730×10 -7 e x +1.2730×10 -7 e y
E 2 ＝4.5272×10 -8 e x +4.5272×10 -8 e y +1.5905×10 -5 e z
H 4 ＝-8.5294×10 -8 e x +8.5294×10 -8 e y
E 4 ＝1.5167×10 -8 e x +1.5167×10 -8 e y +2.1261×10 -5 e z
H 5 ＝3.1678×10 -9 e x -3.1678×10 -9 e y
E 5 ＝-4.5603×10 -10 e x -4.5603×10 -10 e y -9.8673×10 -7 e z
14. by respectively superposing the electric field intensity and the magnetic field intensity caused by each sinusoidal component, the electric field intensity and the magnetic field intensity caused by the total current on the drain pin at the space coordinate (0.05,0.05,0.11) can be obtained when the time t=1s.
H d ＝-1.7835×10 -7 e x +1.7835×10 -7 e y
E d ＝3.7888×10 -8 e x +3.7888×10 -8 e y +3.4218×10 -5 e z
The electric field intensity and the magnetic field intensity caused by the drain electrode current and the gate electrode current are calculated according to the method, and the result is obtained:
H s ＝1.2944×10 -8 e x -1.2944×10 -8 e y
E s ＝-2.9854×10 -8 e x -2.9854×10 -8 e y +1.1009×10 -5 e z
H g ＝4.6900×10 -8 e x -4.6900×10 -8 e y
E g ＝3.8538×10 -8 e x +3.8538×10 -8 e y -2.7904×10 -5 e z
15. and correcting and then superposing near-area electromagnetic fields caused by current conduction on the three pins according to the three-dimensional space pin distribution of the SiC Mosfet device, so that the near-area electromagnetic fields around the device can be obtained. For the pin distribution in fig. 1, with the drain pin as the z-axis, the gate pin is at x=0, y= -d gd Where the source pin is at x=0, y=d ds Where d is gd D is the distance between the gate pin and the drain pin ds Is the distance between the drain lead and the source lead. The correction superposition formula is:
the results were:
the foregoing is merely a preferred embodiment of the present invention, and it should be noted that modifications and variations could be made by those skilled in the art without departing from the technical principles of the present invention, and such modifications and variations should also be regarded as being within the scope of the invention.
Claims (5)
1. A near-field modeling method of a SiC MOSFET is characterized by comprising the following steps of
Establishing a spice model, and establishing a simulation circuit according to the spice model to obtain time domain currents of three pins of the SiC Mosfet;
performing Fourier decomposition and spectrum analysis on the time domain current of the pin, and decomposing the time domain current into sinusoidal components with different frequencies;
solving the dynamic bit of each sinusoidal component along the pin direction to obtain the dynamic bit of each sinusoidal component;
based on the dynamic bit, calculating the magnetic induction intensity and the electric field intensity caused by sinusoidal components of each frequency, and calculating the magnetic field intensity by the magnetic induction intensity;
accumulating the magnetic field intensity and the electric field intensity caused by the sinusoidal components of each frequency respectively to obtain the near-area magnetic field intensity and the electric field intensity of each pin;
correcting and superposing electromagnetic fields of the three pins according to the three-dimensional distribution of the pins of the SiC MOSFET, and deducing a near-area electromagnetic field of the SiC MOSFET;
solving a dynamic bit for each sinusoidal component along the pin direction to obtain a dynamic bit formula of each sinusoidal component as follows:
wherein: (x, y, z) is a field point in space; mu is magnetic permeability;
l is the length of a Mosfet pin;a kth sinusoidal component of the conduction current on the pin; />Is a dynamic bit;
the formula for calculating the magnetic induction intensity is as follows:
wherein:is the magnetic induction vector x-axis component; />Is the magnetic induction vector y-axis component; />Is the magnetic induction vector z-axis component; e, e x 、e y 、e z Unit vectors in the x, y and z axis directions respectively;
the kth sinusoidal component on the pin induces magnetic induction at the field point (x, y, z) as follows:
wherein: omega k Angular frequency for the kth sinusoidal component;is the magnetic induction intensity;
the formula for calculating the electric field strength caused by sinusoidal components of each frequency is as follows:
wherein:is the x-axis component of the electric field intensity vector; />Is the x-axis component of the electric field intensity vector; />Is the x-axis component of the electric field intensity vector;
e x 、e y 、e z unit vectors in the x, y and z axis directions respectively;
G 1 、G 2 、G 3 for the intermediate quantity, the following is satisfied:
the kth sinusoidal component on the pin causes an electric field strength vector at the field point (x, y, z) of:
2. the SiC MOSFET near field modeling method of claim 1, wherein the spice model is built according to a model and data manual of a switching device, including a static model and a dynamic model of a power device.
3. The method of modeling a near field electromagnetic field of a SiC MOSFET according to claim 1, wherein the formula for calculating the magnetic field strength from the magnetic induction is as follows:
wherein: h is the magnetic field strength.
4. The method for modeling a near-field electromagnetic field of a SiC MOSFET according to claim 1, wherein the formula for obtaining the near-field magnetic field strength and the electric field strength of each pin by accumulating the magnetic field strength and the electric field strength caused by sinusoidal components of each frequency is:
wherein: h is the magnetic field intensity of the near zone caused by the total current on the pin; h k The magnetic field intensity of the near zone caused by the kth sinusoidal component on the pin; e is the near field strength caused by the total current on the pin; e (E) k The near field strength caused by the kth sinusoidal component on the pin.
5. The method for modeling a near-field electromagnetic field of a SiC MOSFET according to claim 4, wherein the formula for correcting and superposing the electromagnetic fields of the three pins according to the three-dimensional distribution of the pins of the SiC MOSFET is as follows:
wherein: d, d gd Is the distance between the gate pin and the drain pin; d, d ds Is the distance between the drain lead and the source lead; h g 、H d 、H s The magnetic field intensity caused by currents on the grid pin, the drain pin and the source pin respectively; e (E) g 、E d 、E s The near field strength caused by the total current on the gate pin, the drain pin, and the source pin, respectively.
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