CN109446595A - A method of extracting the parasitic parameter of silicon carbide inverter - Google Patents
A method of extracting the parasitic parameter of silicon carbide inverter Download PDFInfo
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- CN109446595A CN109446595A CN201811178833.1A CN201811178833A CN109446595A CN 109446595 A CN109446595 A CN 109446595A CN 201811178833 A CN201811178833 A CN 201811178833A CN 109446595 A CN109446595 A CN 109446595A
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- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/36—Circuit design at the analogue level
- G06F30/367—Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
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- G—PHYSICS
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- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
- G06F30/398—Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
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Abstract
The invention discloses a kind of methods of parasitic parameter for extracting silicon carbide inverter, comprising: obtains the physical structure parameter of silicon carbide inverter, and thus establishes the threedimensional model of inverter, to obtain basic threedimensional model；The material properties and electric current that conductor is arranged in basic threedimensional model flow into position and electric current flows out position；Artificial circuit operating condition, to extract parasitic inductance and dead resistance；The material properties of conductor are set in basic threedimensional model, and be respectively set positive direct-current bus and with reference between ground, negative DC bus and with reference between ground and the voltage difference between each bridge arm midpoint of inverter and radiator；Artificial circuit operating condition, to extract parasitic capacitance.The method that the present invention can pass through software emulation in the design process of inverter accurately extracts the parasitic parameter of inverter, to reduce production cost, and shortens fabrication cycle.
Description
Technical field
The invention belongs to inverter fields, more particularly, to a kind of side of parasitic parameter for extracting silicon carbide inverter
Method.
Background technique
Wide bandgap semiconductor silicon carbide (SiC) power device is with power density is big, switching loss is small, is suitble to high frequency work
Make, the advantages that high-temperature stability is good, last decade silicon carbide power electronic device has obtained development at full speed, leading semiconductor factory
Commercial city puts into relevant research and development and production.But quickly due to silicon carbide device switching speed, thus caused peak voltage may
Driving signal can be had an impact, or even jeopardize equipment and personal safety.Therefore, it is necessary to the parasitic parameter to inverter internal into
Row extracts, and then the measure for the reduction parasitic parameter taken needed for determining, to improve Electro Magnetic Compatibility.
Currently, often utilizing the instruments such as impedance analyzer to parasitic parameter after inverter finished product processes, setting
Do not take appropriate measures but the accurate parasitic parameter for extracting inverter during meter, can not only improve production cost in this way,
Probability of doing over again can be also improved, to extend fabrication cycle.
Summary of the invention
In view of the drawbacks of the prior art and Improvement requirement, the present invention provides a kind of parasitic ginsengs for extracting silicon carbide inverter
Several method, it is intended that accurately extracting posting for inverter by the method for software emulation in the design process of inverter
Raw parameter, to reduce production cost, and shortens fabrication cycle.
To achieve the above object, the present invention provides a kind of methods of parasitic parameter for extracting silicon carbide inverter, including
Following steps:
(1) the physical structure parameter of silicon carbide inverter is obtained, and thus establishes the threedimensional model of inverter, to obtain
Basic threedimensional model；
(2) material properties and electric current that conductor is arranged in basic threedimensional model flow into position and electric current flows out position；
Artificial circuit operating condition, to extract the parasitic inductance of DC master row positive/negative plate and posting for dead resistance and each switching tube
Raw inductance and dead resistance；
(3) material properties of conductor are set in basic threedimensional model, and positive direct-current bus and reference ground is respectively set
Between, negative DC bus and with reference between ground and the voltage difference between each bridge arm midpoint of inverter and radiator；Artificial circuit fortune
Market condition, to extract positive direct-current bus and with reference between ground, between negative DC bus and reference ground and in each bridge arm of inverter
Parasitic capacitance between point and radiator；
Wherein, each switching tube is silicon carbide MOSFET (Metal-Oxide-Semiconductor in silicon carbide inverter
Field-Effect Transistor, Metal-Oxide Semiconductor field effect transistor).
Further, in step (2), the parasitic inductance and dead resistance of DC master row positive/negative plate are extracted, and is respectively opened
Close the parasitic inductance and dead resistance of pipe, comprising:
For any one phase bridge arm, bridge arm upper switch pipe is drained and is divided into the bridge arm part between positive direct-current bus
One section, bridge arm upper switch pipe source electrode to the bridge arm part between bridge arm midpoint is divided into second segment, bridge arm lower switch pipe is leaked
Bridge arm part between best bridge arm midpoint is divided into third section, by bridge arm lower switch pipe source electrode to the bridge between negative DC bus
Arm section is divided into the 4th section；Each section of parasitic parameter is extracted respectively；
Since the operating condition of switching tube is difficult to accurately emulate, each bridge arm is divided into multiple points not comprising switching tube
Section, and the method for using stage extraction extracts each section of bridge arm of parasitic parameter respectively, can be improved extracted parasitic parameter
Accuracy.
Further, in step (2) and step (3), the material properties of set conductor are conductor conductivity；Due to not
The conductor of same material has different conductivity, and during extracting parasitic parameter, conductivity is very important ginseng
Amount, the conductivity by the way that conductor is arranged complete the setting to conductor material properties, can be improved the standard of extracted parasitic parameter
Exactness.
Further, in step (1), used 3 d modeling software is when establishing the threedimensional model of inverter
Solidworks；Solidworks has used Windows OLE technology, direct viewing type designing technique, advanced parasolid kernel
And good and third party software integrated technology, and component is various, therefore function is more comprehensive, and it can be to SiC
MOSFET internal structure carries out Accurate Model, so that it is guaranteed that the accuracy of the parasitic parameter extracted.
Further, in step (2), the parasitic inductance and dead resistance of DC master row positive/negative plate are extracted, and is respectively opened
When closing the parasitic inductance and dead resistance of pipe, used finite element field solver is Ansys Q3D；Ansys Q3D is a kind of
Quasi-static electromagnetic field simulation software can provide accurate simulation result, using Ansys Q3D in specific frequency range
The dead resistance and parasitic inductance in inverter are extracted, can be improved the accuracy for extracting parasitic parameter.
Further, in step (3), positive direct-current bus is extracted and with reference between ground, between negative DC bus and reference ground
And when parasitic capacitance between each bridge arm midpoint of inverter and radiator, used electromagnetic software is Ansoft
Maxwell；Ansoft Maxwell have wizard-like user interface, precision driving Adaptive meshing technology and it is powerful after
Processor carries out emi analysis using Ansoft Maxwell and thus extracts parasitic capacitance, it can be ensured that the parasitism electricity of extraction
The accuracy of appearance.
In general, contemplated above technical scheme through the invention, can obtain it is following the utility model has the advantages that
(1) method of the parasitic parameter provided by the present invention for extracting silicon carbide inverter, according to silicon carbide inverter
Physical structure parameter establishes the threedimensional model of inverter, and further by emulation respectively extract inverter in dead resistance and
Parasitic inductance and parasitic capacitance can just extract the parasitic parameter of inverter in the design process of silicon carbide inverter,
To substantially reduce probability of doing over again during researching and developing practical structures, shorten fabrication cycle, and reduce cost of manufacture.
(2) method of the parasitic parameter provided by the present invention for extracting silicon carbide inverter, in the parasitism for extracting inverter
When resistance and parasitic inductance, each bridge arm is divided into multiple segmentations not comprising switching tube, and using the method for stage extraction point
The parasitic parameter for indescribably taking each section of bridge arm, since the operating condition of switching tube is difficult to accurately emulate, using the side of stage extraction
Method can be improved the accuracy of extracted parasitic parameter.
(3) method of the parasitic parameter provided by the present invention for extracting silicon carbide inverter, by the conductance that conductor is arranged
Rate completes the setting to conductor material properties, since the conductor of unlike material has different conductivity, and it is parasitic extracting
During parameter, conductivity is very important parameter, therefore, can be improved the accuracy of extracted parasitic parameter.
Detailed description of the invention
Fig. 1 is parasitic parameter schematic diagram in silicon carbide inverter provided in an embodiment of the present invention；
Fig. 2 is the method flow diagram of the parasitic parameter provided in an embodiment of the present invention for extracting silicon carbide inverter；
Fig. 3 is the threedimensional model schematic diagram of one bridge arm of silicon carbide inverter provided in an embodiment of the present invention；
Fig. 4 is the equivalent circuit diagram of one bridge arm of silicon carbide inverter provided in an embodiment of the present invention；
Fig. 5 is added when being the gate pole parasitic inductance and dead resistance provided in an embodiment of the present invention for extracting bridge arm upper switch pipe
The schematic diagram of excitation；
In all the appended drawings, identical appended drawing reference is used to indicate identical element or structure, in which:
1 is AC output end, and 2 be the end DC-, and 3 be the end DC+, and 4 be bridge arm upper switch pipe gate terminal, and 5 be bridge arm upper switch Guan Yuan
Extremely, 6 be bridge arm lower switch pipe gate terminal, and 7 be lower bridge arm source terminal, and 8 flow into position for electric current, and 9-14 is that electric current flows out position
It sets.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in the various embodiments of the present invention described below
Not constituting a conflict with each other can be combined with each other.
In the present invention, the physical structure of silicon carbide inverter and needs extract parasitic parameter is as shown in Figure 1, wherein three
Switching tube on phase bridge arm is silicon carbide (SiC) MOSFET (Metal-Oxide-Semiconductor Field-Effect
Transistor, Metal-Oxide Semiconductor field effect transistor), the parasitic parameter for needing to extract specifically includes: DC master row
Positive and negative pole plate parasitic inductance Lm1, Lm2, dead resistance Rm1, Rm2；The parasitic inductance Lg1 of each silicon carbide MOSFET interior keys line
~Lg6, Ls1~Ls6, Ld1~Ld6, dead resistance Rg1~Rg6, Rs1~Rs6, Rd1~Rd6；Positive and negative DC bus and ginseng
Examine parasitic capacitance Cn1, Cn2 between ground；Parasitic capacitance between the midpoint and radiator of each bridge arm of SiC MOSFET composition
Cp1~Cp3.
Below by taking the silicon carbide inverter that the SiC MOSFET of model CAS300M12BM2 is constituted as an example, to institute of the present invention
The method of the parasitic parameter of the extraction silicon carbide inverter of offer is described further.
The method of the parasitic parameter provided by the invention for extracting silicon carbide inverter, as shown in Fig. 2, including the following steps:
(1) the physical structure parameter of silicon carbide inverter is obtained, and thus establishes the threedimensional model of inverter, to obtain
Basic threedimensional model；
In an optional embodiment, used 3 d modeling software is when establishing the threedimensional model of inverter
Solidworks；Solidworks has used Windows OLE technology, direct viewing type designing technique, advanced parasolid kernel
And good and third party software integrated technology, and component is various, therefore function is more comprehensive, and it can be to SiC
MOSFET internal structure carries out Accurate Model, so that it is guaranteed that the accuracy of the parasitic parameter extracted；The silicon carbide inversion established
The threedimensional model of one bridge arm of device as shown in figure 3, wherein each switching tube by six SiC MOSFET chips respectively with six
Freewheeling diode (FWD) inverse parallel is constituted, and corresponding equivalent circuit diagram is as shown in Figure 4；Since three-phase bridge arm structure is identical, herein
Only it is illustrated by taking the threedimensional model and corresponding equivalent circuit diagram of a bridge arm as an example；In figs. 3 and 4, the end DC+ 3 is external
The anode of DC power supply, the cathode of 2 external direct current power supply of the end DC-, bridge arm lower switch pipe gate terminal 6, source terminal 7 play external drive
The effect of movable plate and measurement, bridge arm lower switch pipe source terminal 7 are connected with the end DC- 2；Bridge arm upper switch pipe gate terminal 4, source terminal
5 are used for external driving plate and measurement, and bridge arm upper switch pipe source terminal 5 is connected with output end 1；
(2) material properties of conductor are set in basic threedimensional model and electric current flows in and out position；Artificial circuit
Operating condition, with extract DC master row positive/negative plate parasitic inductance and dead resistance and the parasitic inductance of each switching tube and
Dead resistance；
In an optional embodiment, the parasitic inductance and dead resistance of DC master row positive/negative plate are extracted, and
When the parasitic inductance and dead resistance of each switching tube, used finite element field solver is Ansys Q3D；Q3D is a kind of standard
Static electromagnetic field simulation software, accurate simulation result can be provided in specific frequency range, is mentioned using Ansys Q3D
The dead resistance and parasitic inductance in inverter are taken, can be improved the accuracy for extracting parasitic parameter；
When using Ansys Q3D extracting parameter, needs to be arranged the position of electric current inflow and outflow, then generates corresponding network,
It is emulated；By taking the gate pole family planning inductance and dead resistance that extract bridge arm upper switch pipe as an example, bridge arm upper switch pipe gate pole 4 is set
It is set to electric current and flows into position 8, the connection of each silicon carbide MOSFET and bridge arm upper switch pipe gate pole 4 of bridge arm upper switch pipe will be constituted
Point is set as electric current outflow position 9-14, as shown in Figure 5；In Ansys Q3D, network is set by electric current inflow position 8
Electric current outflow position 9-14 is disposed as the sink of network by source, then raw using the function of software automatic generating network
At network, type will be solved in solving setting and is set as AC resistance, inductance, it is 1MHz that setting, which solves frequency, is then started
The copying of field solver Ansys Q3D is run, Ansys Q3D can calculate the parasitism of the circuit under certain operating conditions
Parameter；
In an optional embodiment, the parasitic inductance and dead resistance of DC master row positive/negative plate are extracted, and
The parasitic inductance and dead resistance of each switching tube, comprising:
For any one phase bridge arm, bridge arm upper switch pipe is drained and is divided into the bridge arm part between positive direct-current bus
One section, bridge arm upper switch pipe source electrode to the bridge arm part between bridge arm midpoint is divided into second segment, bridge arm lower switch pipe is leaked
Bridge arm part between best bridge arm midpoint is divided into third section, by bridge arm lower switch pipe source electrode to the bridge between negative DC bus
Arm section is divided into the 4th section；Each section of parasitic parameter is extracted respectively；
Since the operating condition of switching tube is difficult to accurately emulate, each bridge arm is divided into multiple points not comprising switching tube
Section, and the method for using stage extraction extracts each section of bridge arm of parasitic parameter respectively, can be improved extracted parasitic parameter
Accuracy；
(3) material properties of conductor are set in basic threedimensional model, and positive direct-current bus and reference ground is respectively set
Between, negative DC bus and with reference between ground and the voltage difference between each bridge arm midpoint of inverter and radiator；Artificial circuit fortune
Market condition, to extract positive direct-current bus and with reference between ground, between negative DC bus and reference ground and in each bridge arm of inverter
Parasitic capacitance between point and radiator；
In an optional embodiment, extract positive direct-current bus and with reference between ground, negative DC bus and with reference to ground
Between and when parasitic capacitance between each bridge arm midpoint of inverter and radiator, used electromagnetic software is
Ansoft Maxwell；Ansoft Maxwell have wizard-like user interface, precision driving Adaptive meshing technology and
Powerful preprocessor carries out emi analysis using Ansoft Maxwell and thus extracts parasitic capacitance, it can be ensured that extracts
Parasitic capacitance accuracy；
In the embodiment above, in step (2) and step (3), the material properties of set conductor are conductor conductivity；
Since the conductor of unlike material has different conductivity, and during extracting parasitic parameter, conductivity is very heavy
The parameter wanted, the conductivity by the way that conductor is arranged complete the setting to conductor material properties, can be improved extracted parasitic ginseng
Several accuracy.
When extracting the parasitic parameter of silicon carbide inverter using above method, an optional implementation process is as follows:
(1) the physical structure parameter of silicon carbide inverter is obtained, and thus establishes the three of inverter using Solidworks
Dimension module, to obtain basic threedimensional model；Basic threedimensional model is exported into the file of " x_t " format；
(2) " x_t " formatted file for preserving basic threedimensional model is directed into Ansys Q3D；According to the material of conductor
The conductivity of conductor is arranged in matter in Ansys Q3D, and electric current is arranged in Ansys Q3D and flows into position and electric current outflow position
It sets；Artificial circuit operating condition, to extract the parasitic inductance and parasitism of DC master row positive/negative plate by the method for stage extraction
The parasitic inductance and dead resistance of resistance and each switching tube；
(3) " x_t " formatted file for preserving basic threedimensional model is directed into Ansoft Maxwell；According to conductor
Material the conductivity of conductor is set in Ansoft Maxwell, and DC bus is respectively set in AnsoftMaxwell
Between reference ground, negative DC bus and with reference between ground and the voltage difference between each bridge arm midpoint of inverter and radiator；
Artificial circuit operating condition, with extract positive direct-current bus and with reference between ground, negative DC bus and with reference between ground and inversion
Parasitic capacitance between each bridge arm midpoint of device and radiator.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should all include
Within protection scope of the present invention.
Claims (6)
1. a kind of method for the parasitic parameter for extracting silicon carbide inverter, which comprises the steps of:
(1) the physical structure parameter of silicon carbide inverter is obtained, and thus establishes the threedimensional model of inverter, to obtain basis
Threedimensional model；
(2) material properties of conductor are set in the basic threedimensional model and electric current flows into position and electric current flows out position；
Artificial circuit operating condition, to extract the parasitic inductance and dead resistance and each switching tube of DC master row positive/negative plate respectively
Parasitic inductance and dead resistance；
(3) material properties of conductor are set in the basic threedimensional model, and positive direct-current bus and reference ground is respectively set
Between, negative DC bus and with reference between ground and the voltage difference between each bridge arm midpoint of inverter and radiator；Artificial circuit fortune
Market condition, to extract positive direct-current bus and with reference between ground, between negative DC bus and reference ground and in each bridge arm of inverter
Parasitic capacitance between point and radiator；
Wherein, each switching tube is silicon carbide MOSFET in the silicon carbide inverter.
2. extracting the method for the parasitic parameter of silicon carbide inverter as described in claim 1, which is characterized in that the step
(2) in, the parasitic inductance and dead resistance and the parasitic inductance and parasitism of each switching tube electricity of extraction DC master row positive/negative plate
Resistance, comprising:
For any one phase bridge arm, bridge arm upper switch pipe is drained and is divided into first to the bridge arm part between positive direct-current bus
Section, is divided into second segment for bridge arm upper switch pipe source electrode to the bridge arm part between bridge arm midpoint, and bridge arm lower switch pipe is drained
It is divided into third section to the bridge arm part between bridge arm midpoint, by bridge arm lower switch pipe source electrode to the bridge arm between negative DC bus
Part is divided into the 4th section；Each section of parasitic parameter is extracted respectively.
3. extracting the method for the parasitic parameter of silicon carbide inverter as claimed in claim 1 or 2, which is characterized in that the step
Suddenly in (2) and the step (3), the material properties of set conductor are the conductivity of conductor.
4. extracting the method for the parasitic parameter of silicon carbide inverter as claimed in claim 1 or 2, which is characterized in that the step
Suddenly in (1), establishing used 3 d modeling software when the threedimensional model of inverter is Solidworks.
5. extracting the method for the parasitic parameter of silicon carbide inverter as claimed in claim 1 or 2, which is characterized in that the step
Suddenly in (2), extract respectively DC master row positive/negative plate parasitic inductance and dead resistance and the parasitic inductance of each switching tube and
When dead resistance, used finite element field solver is Ansys Q3D.
6. extracting the method for the parasitic parameter of silicon carbide inverter as claimed in claim 1 or 2, which is characterized in that the step
Suddenly it in (3), extracts between positive direct-current bus and reference ground, between negative DC bus and reference ground and each bridge arm midpoint of inverter
When parasitic capacitance between radiator, used electromagnetic software is Ansoft Maxwell.
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| CN111624407A (en) * | 2020-04-08 | 2020-09-04 | 南京航空航天大学 | Method for extracting parasitic parameters of DC/DC converter |
| CN113158605A (en) * | 2021-03-10 | 2021-07-23 | 南京工程学院 | SiC MOSFET near-zone electromagnetic field modeling method |
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| CN111624407A (en) * | 2020-04-08 | 2020-09-04 | 南京航空航天大学 | Method for extracting parasitic parameters of DC/DC converter |
| CN113158605A (en) * | 2021-03-10 | 2021-07-23 | 南京工程学院 | SiC MOSFET near-zone electromagnetic field modeling method |
| CN113158605B (en) * | 2021-03-10 | 2024-02-13 | 南京工程学院 | SiC MOSFET near-zone electromagnetic field modeling method |
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