CN106372357B - A kind of GaN HEMT nonlinear noise method for establishing model - Google Patents
A kind of GaN HEMT nonlinear noise method for establishing model Download PDFInfo
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Abstract
The present invention relates to semiconductor integrated circuit systems -- make field more particularly to a kind of method for building up of GaN HEMT nonlinear noise model, which comprises the steps of: S1, establish GaN HEMT nonlinear equivalent circuit model；S2, after the intrinsic region in the GaN HEMT nonlinear equivalent circuit model is introduced noise source, the expression formula of three noise sources is obtained；S3, under different drain-source current bias conditions, obtain GaN HEMT nonlinear equivalent circuit model in channel noise coefficient with drain-source current variation relation；S4, according to the channel noise coefficient with the variation relation of drain-source current, obtain the expression formula that complete drain electrode noise current source changes with drain-source current, and according to three noise sources of introducing in GaN HEMT nonlinear equivalent circuit model, establish GaN HEMT nonlinear noise model, noise characteristic of the GaN HEMT device under nonlinear state can be simulated, i.e. the noise parameter of device can be used for designing GaN HEMT low noise amplifier with the variation of input power.
Description
Technical field
The present invention relates to semiconductor integrated circuit manufacturing fields more particularly to a kind of GaN HEMT nonlinear noise model to build
Cube method.
Background technique
Device model plays a crucial role in circuit design, plays between circuit design and technological design
Bridge beam action.Accurate device model becomes more and more important, this can not only improve the accuracy of circuit design, reduces technique
Repeatedly, and product cost can be reduced, shortens the lead time.
GaN high electron mobility transistor (HEMT) device has very high two-dimensional electron gas (2-DEG) concentration, height full
The advantages that with electron transfer rate and high power density, so that GaN HEMT device has GaAs device in low noise applications field
Incomparable advantage, such as: there is better linear characteristic, there is higher dynamic range under identical noise coefficient；
With bigger broadband character, it is suitble to make ultra wide band device；Energy receiving is higher to burn input power, can increase the anti-of complete machine
Interference performance simplifies prime and protects circuit.Therefore, GaN HEMT low-noise device and its monolithic integrated optical circuit (MMIC), have become
For its another hot spot after microwave power device application.
The noise model of GaN HEMT is mainly used for designing GaN microwave low-noise amplifier chip.Traditional noise model
Mainly for type of device such as GaAs pHEMT or MESFET, the input signal power of this kind of low-noise device generally will not be too
Greatly, device work is in linear region, and noise model is based on small-signal equivalent circuit, without making an uproar under outlines device nonlinear state
Sound characteristics.But GaN HEMT device is due to its exclusive performance advantage, in the case where high-power input, is still able to maintain preferably
Noiseproof feature, therefore can be used to design low noise amplifier.Under this application scenarios, the noise of GaN HEMT
Model needs to have the ability of noise characteristic of the analog device under nonlinear state, this is that traditional device noise model does not have
Have.
Summary of the invention
The embodiment of the present invention solves traditional by providing a kind of method for building up of GaN HEMT nonlinear noise model
Line noise model cannot be used for the problem of design GaN HEMT low noise amplifier.
In order to solve the above-mentioned technical problem, building the embodiment of the invention provides a kind of GaN HEMT nonlinear noise model
Cube method, which comprises the steps of:
S1, GaN HEMT nonlinear equivalent circuit model is established；
S2, after the intrinsic region in the GaN HEMT nonlinear equivalent circuit model is introduced noise source, three are obtained
The expression formula of noise source；
S3, under different drain-source current bias conditions, obtain GaN HEMT nonlinear equivalent circuit model in channel make an uproar
Sonic system number with drain-source current variation relation；
S4, according to the channel noise coefficient with the variation relation of drain-source current, obtain complete drain electrode noise current source
With the expression formula that drain-source current changes, and according to three noise sources are introduced in GaN HEMT nonlinear equivalent circuit model, build
Vertical GaN HEMT nonlinear noise model.
Further, S1 is specifically included:
De- embedding processing is done to GaN HEMT device；
The small signal equivalent circuit model for establishing GaN HEMT device extracts small signal etc. under more bias conditions respectively
Imitate the ectoparasitism parameter and assertive evidence parameter in circuit model；
According to the intrinsic parameters in the small signal equivalent circuit model with the numerical value of offset change, and combine I-V, C-V
Test data, establish the nonlinear equivalent circuit model of GaN HEMT.
Further, after S1, load balance factor test is carried out to GaN HEMT device, obtains test data, it will be described
The nonlinear equivalent circuit model insertion circuit simulating software of GaN HEMT carries out analogue simulation, obtains model emulation data, right
The nonlinear equivalent circuit model of the GaN HEMT is determined if comparison coincide than the model emulation data and test data
Accurately.
Further, De- embedding processing is done to GaN HEMT device, specifically:
De- embedding processing is done using the method for open-circuit structure and short-circuit structure to GaN HEMT device.
Further, three noise sources are specially shot-noise current source caused by indicating gate leakage current, leakage
Pole channel noise current source, the thermal noise voltage source that intrinsic resistance generates.
Further, the S3, specifically includes:
Obtain in S2 three noise sources are accessed in GaN HEMT nonlinear equivalent circuit models, and are obtained default inclined
Noise model under the conditions of setting；
It will be emulated in noise model embedded circuit simulation software, analog simulation obtains making an uproar for GaN HEMT device
Sonic system number simulation value；
Test noise coefficient test value of the GaN HEMT device under the default bias condition；
The noise coefficient simulation value and the noise coefficient test value are compared, channel noise coefficient is extracted
Value, and obtain the relationship that the channel noise coefficient changes with drain-source current.
Further, it is accessed in GaN HEMT nonlinear equivalent circuit models by obtained in S2 three noise sources, and
It obtains after the noise model under default bias condition, further includes:
The test value of the simulation value for four noise parameters that the noise model emulates and GaN HEMT device is carried out pair
Than determining that the noise model of the GaN HEMT is accurate if comparison coincide.
Further, S4 specifically:
According to the channel noise coefficient in S3 with the variation relation of drain-source current, empirically rule, passes through parameter fitting
Mode, obtain the expression formula that changes with drain-source current of channel noise coefficient；
According to the expression formula that the channel noise coefficient of acquisition changes with drain-source current, complete drain electrode noise current source is obtained
The expression formula changed with drain-source current；
By in the expression formula access GaN HEMT nonlinear equivalent circuit model of three noise sources, GaN HEMT is obtained
Nonlinear noise model.
Further, after S4, further includes: by the emulation data and test data of GaN HEMT nonlinear noise model
It compares, when comparison coincide, determines the accurate of the GaN HEMT nonlinear noise model.
Using one or more technical solution in the present invention, have the following beneficial effects:
1, noise characteristic of the GaN HEMT device under nonlinear state can be simulated, i.e., the noise parameter of device is with input
The variation of power can be used for designing GaN HEMT low noise amplifier.
2,50 Ω noise measuring systems are based on, without expensive signal source impedance coordinator, and model parameter extraction is simple
It is single.
3, influence of the grid current to GaN HEMT device noiseproof feature is introduced, model accuracy is higher.
Detailed description of the invention
Fig. 1 is the flow diagram of the method for building up of GaN HEMT nonlinear noise model in the embodiment of the present invention；
Fig. 2 is small-signal equivalent circuit topological structure schematic diagram in the embodiment of the present invention；
Fig. 3 is noise equivalent circuit structural schematic diagram in the embodiment of the present invention；
Fig. 4 a- Fig. 4 d is that four noise parameters of GaN HEMT device in the embodiment of the present invention are closed with the variation of frequency respectively
System.
Specific embodiment
The embodiment of the present invention solves traditional by providing a kind of method for building up of GaN HEMT nonlinear noise model
Line noise model cannot be used for the problem of design GaN HEMT low noise amplifier.
In order to solve the above-mentioned technical problem, in conjunction with appended figures and specific embodiments to of the invention
Technical solution is described in detail.
The embodiment of the invention provides a kind of method for building up of GaN HEMT nonlinear noise model, as shown in Figure 1, packet
It includes: S1 and establishes GaN HEMT nonlinear equivalent circuit model；S2, will be intrinsic in GaN HEMT nonlinear equivalent circuit model
After region introduces noise source, the expression formula of three noise sources is obtained；S3, under different drain-source current bias conditions, obtain GaN
Channel noise coefficient in HEMT nonlinear equivalent circuit model with drain-source current variation relation；S4, according to channel noise system
Variation relation of the number with drain-source current, the expression formula that the complete drain electrode noise current source of acquisition changes with drain-source current, and according to
Three noise sources are introduced in GaNHEMT nonlinear equivalent circuit model, establish GaN HEMT nonlinear noise model.
In a particular embodiment, S1 is specifically included: doing De- embedding processing to GaN HEMT device；Establish GaN HEMT
The small signal equivalent circuit model of device, under more bias conditions, the outside extracted in small signal equivalent circuit model respectively is posted
Raw parameter and assertive evidence parameter；According to the intrinsic parameters in small signal equivalent circuit model with the numerical value of offset change, and combine I-
V, the test data of C-V establishes the nonlinear equivalent circuit model of GaN HEMT.
Specifically, in order to simulate the nonlinear characteristic of GaN HEMT, such as gain compression, efficiency, harmonic wave, crystal need to be established
The nonlinear model of pipe.In the step, with a grid length for 0.7 μm, grid width is 150 μm, and Al group is divided into 35% GaN HEMT
Device is example, using the modeling procedure of GaN HEMT nonlinear equivalent circuit model, establishes the non-linear equivalent electricity of GaN HEMT
Road model.
Firstly, doing De- embedding processing to the GaN HEMT device (test structure), when due to On-wafer measurement, calibration is usually only
Test reference face can be moved to video probe end face, the data measured at this time contain the influence of test structure, in order to obtain
The performance parameter of practical GaN HEMT needs to make the test device De- embedding processing, uses and open when common De- embedding is handled
The method of line structure and short-circuit structure eliminates the influence of shunt capacitance using open-circuit structure, eliminates series electrical using short-circuit structure
The influence of sense and resistance.
Then, GaN HEMT small signal equivalent circuit model is the basis for establishing nonlinear equivalent circuit model.This step
In, the small signal equivalent circuit model of GaN HEMT device is established, the small-signal equivalent circuit topology containing 16 parameters is chosen,
In have 7 intrinsic parameters and 9 parasitic parameters, these parameters are all not varying with frequency in model effective frequency range
Amount.9 parasitic parameters are the parasitic parameter network of FET routine, parasitic inductance, capacitor and electricity including grid, drain electrode and source electrode
Resistance.The topological structure schematic diagram of the equivalent-circuit model is as shown in Fig. 2, wherein the part in dotted line frame indicates the sheet of GaN HEMT
Levy parameter, ingAnd indRespectively indicate equivalent grid and drain electrode noise current source.
Then, (cold using conventional cold-FET according to GaN HEMT small signal equivalent circuit model determining among the above
) and hot-FET (thermal field) test method, it is outer in extraction small signal equivalent circuit model respectively under multiple bias conditions
Portion's parasitic parameter and intrinsic parameters, ectoparasitism parameter can consider not to be changed with bias condition, and intrinsic parameters are with biasing
Condition variation, establishes GaNHEMT nonlinear model for next step and prepares.Wherein, the GaN HEMT device is in drain-source voltage
Vds=5V, drain-source current IdsUnder the bias condition of=11mA, 16 small-signal equivalent circuit networks of GaN HEMT are calculated
Parameter value is as shown in table following table:
Finally, according to the intrinsic parameters extracted among the above with the numerical value of offset change, and combine the test of DC I-V, C-V
Data (variation of the electric current with voltage, the variation of capacitance with voltage), can establish the nonlinear equivalent circuit model of GaNHEMT.
Most important two non-linear parameters are drain electrode non-linear current I in the nonlinear equivalent circuit modeldsAnd grid non-linear
Charge Qg.There are many model formation for describing the two non-linear parameters, more commonly used such as EE-HEMT model and Angelov mould
Type and improved form based on them.The nonlinear model formula chosen in this example is Angelov-GaN model.
Above-mentioned is the specific steps for establishing GaN HEMT nonlinear equivalent circuit model, non-thread in order to verify the GaNHEMT
Property equivalent-circuit model accuracy, after S1, to GaN HEMT device carry out load balance factor test, obtain test data,
The nonlinear equivalent circuit model insertion circuit simulating software (such as ADS, AWR) of GaN HEMT is subjected to analogue simulation, is obtained
Model emulation data compare the model emulation data and test data, if comparison coincide, determine that the GaN HEMT's is non-linear etc.
It is accurate to imitate circuit model.
In S2, need to obtain GaN HEMT intrinsic region noise source formula, by the equivalent electricity of the small signal of GaN HEMT in Fig. 2
The intrinsic region (part i.e. in dotted line frame) of road topology, the noise equivalent circuit after introducing noise source are as shown in Figure 3.In model
Comprising three noise sources, it is respectively as follows: shot-noise current source i caused by indicating gate leakage currentgL, drain channel noise current
Source ic, intrinsic resistance RiThe thermal noise voltage source υ of generationnRi.Compared to traditional transistor noise equivalent-circuit model, the present invention
The model of proposition, by intrinsic resistance RiThermal noise voltage source υnRiThe induction grid noise current source in conventional model is substituted, is drawn
Enter influence of the gate leakage current to noise, and had ignored the correlation between noise source, simplifies the complexity of model.
It should be noted that actually gate leakage current IgLConsist of two parts, respectively grid source leakage current IgsIt is leaked with grid leak
Electric current Igd(IgL=Igs+Igd), but due in noise equivalent circuit, IgLIt is placed between grid source or between grid leak to final
The influence of device noise is the same, therefore in the following example, all uses IgLThe form being placed between grid source.
By the correlation theory of shot-noise current, available gate leakage current IgLThe shot noise expression formula of generation
Are as follows:
In this example, the GaN HEMT device is in drain-source voltage Vds=5V, drain-source current IdsThe bias condition of=11mA
Under, the I that testsgL=22 μ A.
Intrinsic resistance RiThe mean-square value in the thermal noise voltage source of generation are as follows:
For reasonable simplified model, under the premise of guaranteeing model accuracy, formula thinks R in (2)iThe thermal noise electricity of generation
Potential source does not change with drain-source bias current.
In addition, being embedded into GaN HEMT nonlinear equivalent circuit model for convenience, the drain electrode of channel noise will be represented
Noise current source is directly expressed as and drain-source current IdsRelevant expression formula:
Wherein, q is electron charge constant, and α is a noise model parameters relevant to bias current, is named as ditch
Road noise coefficient will calculate its value according to noise coefficient test data of GaN HEMT under the conditions of 50 Ω source impedance in S3.
After obtaining three noise source expression formulas, S3 is executed.
Specifically, S3 is specifically included: obtain in S2 three noise sources are accessed GaN HEMT nonlinear equivalent circuit mould
In type, and obtain the noise model under default bias condition；It will be emulated in the noise model embedded circuit simulation software,
The noise coefficient simulation value of analog simulation acquisition GaN HEMT device；Test GaN HEMT device making an uproar under default bias condition
Sonic system number test value；Noise coefficient simulation value and noise coefficient test value are compared, the value of channel noise coefficient is extracted, and
Obtain the relationship that channel noise coefficient changes with drain-source current.
Three noise source formula are accessed into GaN HEMT obtained in S1 according to port corresponding relationship shown in Fig. 3 first
In nonlinear equivalent circuit model, so that the GaN HEMT noise model under a certain bias condition is obtained, then by the GaN
HEMT noise model embedded circuit simulation software (such as ADS, AWR) is emulated, and is simulated the direct current of GaN HEMT device and is made an uproar
Sound characteristics, wherein channel noise factor alpha is one with bias current IdsThe amount of variation can pass through noise coefficient test data
To determine.
Under the conditions of 50 Ω source impedance, using Noise Factor Analyzer or vector network analyzer, test in this example
GaN HEMT device is in each drain-source current IdsNoise coefficient NF under bias point50, and exist with above-mentioned GaN HEMT noise model
Noise coefficient NF under identical bias point50Simulation value compares, and extracts the value of channel noise coefficient, obtains with IdsVariation
Relationship.
In order to verify the accuracy of the noise model, the simulation value for four noise parameters which is emulated with
The test value of GaNHEMT device compares, if comparison coincide, determines that the noise model of the GaN HEMT is accurate.
Specifically, in order to verify this method proposition noise model accuracy, by four noise parameters of model emulation
It is compared with test value, respectively Minimum noises coefficients NFmin, equivalent noise resistance Rn, optimum noise source conductivity GoptMost
Good noise source susceptance Bopt, Γ in Fig. 4 a- Fig. 4 doptIndicate best source reflection coefficient.In drain-source voltage Vds=5V, drain-source current
IdsUnder the bias condition of=11mA, the noise parameter of the GaN HEMT device with frequency variation relation, such as Fig. 4 a- Fig. 4 d institute
Show, symbol indicates that the noise testing data of the GaNHEMT device (are obtained by traditional test method based on impedance tuner in figure
To), solid line indicates the simulation value of the noise equivalent circuit model of this example, it can be seen that the two is coincide good, it was demonstrated that the present invention
The GaNHEMT noise model precision with higher of offer.
After obtaining the relationship that the channel noise coefficient changes with drain-source current, S4 is executed.
Specifically, according to the channel noise coefficient in S3 with the variation relation of drain-source current, empirically rule, passes through ginseng
The mode of number fitting obtains the expression formula that channel noise coefficient changes with drain-source current；According to the channel noise coefficient of acquisition with
The expression formula of drain-source current variation obtains the expression formula that complete drain electrode noise current source changes with drain-source current；Three are made an uproar
In the expression formula access GaN HEMT nonlinear equivalent circuit model of sound source, GaNHEMT nonlinear noise model is obtained.
Firstly, the channel noise parameter alpha obtained according to S3 is with IdsThe relationship of variation, establishes empirical equation, quasi- by parameter
The mode of conjunction obtains α with drain-source current IdsThe expression formula of variation.By observation, find α with IdsVariation meets tanh letter
The changing rule of number tanh, therefore indicate α with I using the empirical equation in formula (4)dsThe relationship of variation.
α=a1-a2·[tanh(a3·Ids)+tanh(a4·Ids)] (4)
Wherein, a1To a4For fitting parameter.
After bringing formula (4) into formula (3), the noise current source that obtains completely draining is with IdsThe expression formula of variation.Finally, by three
A noise source expression formula accesses in GaN HEMT nonlinear equivalent circuit model according to mode identical in S3, obtains GaN
HEMT nonlinear noise model.Function of the nonlinear noise model in original Angelov-GaN nonlinear equivalent circuit model
On the basis of energy, the function of simulation GaNHEMT device noise characteristic joined, for example, can be with the noise parameter of analog device with inclined
Set the relationship of electric current or input power variation.
Finally, the GaN HEMT nonlinear noise model to acquisition is verified, accuracy is obtained.It is exactly by GaN HEMT
Emulation data and the test data of nonlinear noise model compare, and when comparison coincide, determine that the GaN HEMT is non-linear
Noise model is accurate.
Specifically, it will be emulated in GaN HEMT nonlinear noise model insertion circuit simulating software obtained in S4,
Simulate the noise characteristic under the conditions of different bias conditions and different input power, and the noise parameter with device under the same terms
Test data compares.From the results of view, the two is coincide good, it was demonstrated that GaN HEMT nonlinear noise mould provided by the invention
Type precision with higher, can be used for designing GaNHEMT low noise amplifier.
Although preferred embodiments of the present invention have been described, it is created once a person skilled in the art knows basic
Property concept, then additional changes and modifications may be made to these embodiments.So it includes excellent that the following claims are intended to be interpreted as
It selects embodiment and falls into all change and modification of the scope of the invention.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (9)
1. a kind of method for building up of GaN HEMT nonlinear noise model, which comprises the steps of:
S1, GaN HEMT nonlinear equivalent circuit model is established；
S2, after the intrinsic region in the GaN HEMT nonlinear equivalent circuit model is introduced noise source, three noises are obtained
The expression formula in source；
S3, the channel noise system under different drain-source current bias conditions, in acquisition GaN HEMT nonlinear equivalent circuit model
Count the variation relation with drain-source current；
S4, according to the channel noise coefficient with the variation relation of drain-source current, obtain complete drain electrode noise current source with leakage
The expression formula of ource electric current variation, and according to three noise sources are introduced in GaN HEMT nonlinear equivalent circuit model, establish GaN
HEMT nonlinear noise model.
2. the method for building up of GaN HEMT nonlinear noise model according to claim 1, which is characterized in that S1 is specifically wrapped
It includes:
De- embedding processing is done to GaN HEMT device；
The small signal equivalent circuit model for establishing GaN HEMT device extracts the equivalent electricity of small signal under more bias conditions respectively
Ectoparasitism parameter and intrinsic parameters in the model of road；
According to the intrinsic parameters in the small signal equivalent circuit model with the numerical value of offset change, and combine the survey of I-V, C-V
Data are tried, the nonlinear equivalent circuit model of GaN HEMT is established.
3. the method for building up of GaN HEMT nonlinear noise model according to claim 2, which is characterized in that S1 it
Afterwards, load balance factor test is carried out to GaN HEMT device, test data is obtained, by the nonlinear equivalent circuit of the GaN HEMT
Model insertion circuit simulating software carries out analogue simulation, obtains model emulation data, compares the model emulation data and test
Data determine that the nonlinear equivalent circuit model of the GaN HEMT is accurate if comparison coincide.
4. the method for building up of GaN HEMT nonlinear noise model according to claim 2, which is characterized in that GaN
HEMT device does De- embedding processing, specifically:
De- embedding processing is done using the method for open-circuit structure and short-circuit structure to GaN HEMT device.
5. the method for building up of GaN HEMT nonlinear noise model according to claim 1, which is characterized in that described three
Noise source is specially shot-noise current source caused by indicating gate leakage current, drain channel noise current source, intrinsic resistance
The thermal noise voltage source of generation.
6. the method for building up of GaN HEMT nonlinear noise model according to claim 1, which is characterized in that the S3,
It specifically includes:
Obtain in S2 three noise sources are accessed in GaN HEMT nonlinear equivalent circuit models, and are obtained in default offset strips
Noise model under part；
It will be emulated in noise model embedded circuit simulation software, analog simulation obtains the noise system of GaN HEMT device
Number simulation value；
Test noise coefficient test value of the GaN HEMT device under the default bias condition；
The noise coefficient simulation value and the noise coefficient test value are compared, the value of channel noise coefficient is extracted, and
Obtain the relationship that the channel noise coefficient changes with drain-source current.
7. the method for building up of GaN HEMT nonlinear noise model according to claim 6, which is characterized in that will be in S2
In the three noise sources access GaN HEMT nonlinear equivalent circuit model obtained, and obtain the noise under default bias condition
After model, further includes:
The test value of the simulation value for four noise parameters that the noise model emulates and GaN HEMT device is compared, if
Comparison coincide, and determines that the noise model of the GaN HEMT is accurate.
8. the method for building up of GaN HEMT nonlinear noise model according to claim 1, which is characterized in that S4 is specific
Are as follows:
According to the channel noise coefficient in S3 with the variation relation of drain-source current, empirically rule, passes through the side of parameter fitting
Formula obtains the expression formula that channel noise coefficient changes with drain-source current；
According to the expression formula that the channel noise coefficient of acquisition changes with drain-source current, complete drain electrode noise current source is obtained with leakage
The expression formula of ource electric current variation；
By in the expression formula access GaN HEMT nonlinear equivalent circuit model of three noise sources, it is non-thread to obtain GaN HEMT
Property noise model.
9. the method for building up of GaN HEMT nonlinear noise model according to claim 1, which is characterized in that S4 it
Afterwards, further includes: the emulation data of GaN HEMT nonlinear noise model are compared with test data, when comparison coincide,
Determine the accurate of the GaN HEMT nonlinear noise model.
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