CN105956228B - The transistor modeling method of high efficiency switch power-like amplifier - Google Patents
The transistor modeling method of high efficiency switch power-like amplifier Download PDFInfo
- Publication number
- CN105956228B CN105956228B CN201610244706.1A CN201610244706A CN105956228B CN 105956228 B CN105956228 B CN 105956228B CN 201610244706 A CN201610244706 A CN 201610244706A CN 105956228 B CN105956228 B CN 105956228B
- Authority
- CN
- China
- Prior art keywords
- transistor
- source voltage
- gate source
- electricity
- model
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Evolutionary Computation (AREA)
- Geometry (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The present invention provides a kind of transistor modeling methods of high efficiency switch power-like amplifier comprising: equivalent circuit topology is chosen according to the type of transistor；Awkward silence at a meeting test is carried out to transistor and carries out thermal field test under the conditions of different bias points, extracts ectoparasitism parameter and intrinsic parameters；Small signal equivalent circuit model is established according to intrinsic parameters and ectoparasitism parameter, and obtains grid electricity with the variation relation of gate source voltage；It chooses grid electricity and electricity empirical model is established to three order derivatives of gate source voltage；Direct current voltage test is carried out to transistor, drain current is chosen and electric current empirical model is established to three order derivatives of gate source voltage；Load balance factor test acquisition test data is carried out to transistor, nonlinear model is obtained by small signal equivalent circuit model, electricity empirical model and electric current empirical model, and carry out circuit simulation simulation and obtain emulation data, determines the two degree of agreement.The present invention can the higher derivative component directly to the electricity of transistor and electric current be fitted.
Description
Technical field
The present invention relates to IC design technical fields, more particularly to a kind of high efficiency switch power-like amplifier
Transistor modeling method.
Background technique
The device model of transistor plays a crucial role in circuit design, it is in circuit design and technological design
Between play bridge beam action.It is traditional based on experience as circuit work frequency enters the even higher frequency range of microwave
Design method is not able to satisfy the requirement of circuit design increasingly, thus the accurate device model of acquisition will become more and more important,
This can not only improve the accuracy of circuit design, reduce technique repeatedly, and can reduce product cost, shorten the lead time.
Judge a transistor model quality standard should not only simply investigate device model simulation result and
The degree of agreement of test result, while it should also be taken into account that the factors such as complexity, convergence and parameter extraction difficulty of model, separately
Also need to investigate its performance in practical application circuit outside.Therefore, should be by transistor model in conjunction with actual circuit function, root
According to the needs that different circuits are applied, the transistor model of customization is established, just model can be made to reach precision, complexity, receipts in this way
Balance between holding back property and parameter extraction difficulty.
Traditional empirical model based on analytic formula, such as EE-HEMT model, Angelov model, are directly to crystal
The direct current IV (Current Voltage) and CV (capacitance voltage) test data of pipe are fitted, this class model is mainly used in A class or AB
The Designing power amplifier of this small nonlinearity of class.
And high efficiency switch power-like amplifier works in strong nonlinearity area, it is controlled by being tuned to harmonic impedance
Output voltage current waveform processed, realizes higher efficiency.To the simulation of transistor model harmonic component when this kind of Amplifier Design
Required precision is higher.And traditional empirical model only accounts for the information of fundamental wave and first derivative, the error of higher derivative component
Larger, if continuing to carry out differential or inappropriate parameter extraction to model, the error of these higher derivative components may
It is further amplified, and as the model that this segmentation of EE-HEMT is established, higher derivative is even discontinuous.Therefore, using tradition
Empirical model to design high efficiency switch power-like amplifier, to will lead to resultant error larger, be difficult to meet application demand.
Summary of the invention
The invention mainly solves the technical problem of providing a kind of transistor modelings of high efficiency switch power-like amplifier
Method, can the higher derivative component directly to the electricity of transistor and electric current be fitted.
In order to solve the above technical problems, one technical scheme adopted by the invention is that: a kind of high efficiency switch class function is provided
The transistor modeling method of rate amplifier, comprising: S1: equivalent circuit topology is chosen according to the type of transistor；S2: to the crystalline substance
Body pipe carries out awkward silence at a meeting test and carries out thermal field test under the conditions of different bias points, is tested according to awkward silence at a meeting test result and thermal field
As a result the ectoparasitism parameter and intrinsic parameters of transistor are extracted；S3: it is established according to the intrinsic parameters and ectoparasitism parameter
Transistor small signal equivalent-circuit model, and grid electricity is obtained with the variation relation of voltage from the intrinsic parameters；S4: will
The grid electricity carries out higher derivation to gate source voltage, chooses the grid electricity and establishes electricity to three order derivatives of gate source voltage
Measure empirical model；S5: carrying out direct current voltage test to the transistor, and the drain current measured carries out gate source voltage
Higher derivation, and choose drain current and electric current empirical model is established to three order derivatives of gate source voltage；S6: to the transistor into
The test of row load balance factor obtains test data, by the small signal equivalent circuit model, electricity empirical model and electric current Empirical Mode
Type obtains the nonlinear model of transistor, and carries out circuit simulation simulation and obtain emulation data, determines the emulation data and institute
State the degree of agreement of test data.
Preferably, before step S1, the transistor modeling method further include: the test structure of transistor is gone
Insertion processing.
Preferably, the concrete mode of the De- embedding processing is that the influence of shunt capacitance is eliminated using open-circuit structure, is utilized
The influence of short-circuit structure elimination series inductance and resistance.
It is in contrast to the prior art, the beneficial effects of the present invention are:
1, model has higher accuracy, can be with accurate simulation higher hamonic wave information, while the complexity of model does not have
It significantly improves；
2, the high-order of model can continuously be led, better astringency；
3, the parameter of Definition Model can be carried out from the dimension of each order, parameter meaning is clear, is easy to extract initial value.
Detailed description of the invention
Fig. 1 is the flow diagram of the transistor modeling method of high efficiency switch power-like amplifier of the embodiment of the present invention.
Fig. 2 is the equivalent circuit topology schematic diagram of the intrinsic parameters of GaAs pHEMT device.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that the described embodiments are merely a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
It is that the process of the transistor modeling method of high efficiency switch power-like amplifier of the embodiment of the present invention is shown referring to Fig. 1
It is intended to.The transistor modeling method of the present embodiment the following steps are included:
S1: equivalent circuit topology is chosen according to the type of transistor.
Wherein, the type of transistor is divided into bipolar transistor and field effect transistor, and bipolar transistor includes BJT
(Bipolar Junction Transistor, bipolar junction transistor), HBT (heterojunction bipolar
Transistor, heterojunction bipolar transistor) etc., field effect transistor includes MOSFET (Metal-Oxide-
Semiconductor Field-Effect Transistor, metal-oxide half field effect transistor), MESFET (Metal-
Semiconductor Field-Effect Transistor, metal-semiconductor field effect transistor), HEMT (High
Electron Mobility Transistor, high electron mobility transistor) etc..
The material of transistor includes GaAs, GaN, InP etc. again, therefore, the corresponding equivalent circuit of different types of transistor
Topology and parameter expression are different.By taking GaAs pHEMT device as an example, the equivalent electricity of small signal of common 18 parameters is chosen
Road topology, wherein having 9 intrinsic parameters and 9 parasitic parameters.The equivalent circuit topology of intrinsic parameters is as shown in Figure 2.
S2: awkward silence at a meeting test is carried out to transistor and carries out thermal field test under the conditions of different bias points, is surveyed according to awkward silence at a meeting
Test result and thermal field test result extract the ectoparasitism parameter and intrinsic parameters of transistor.
Wherein, awkward silence at a meeting test (i.e. cold-FET test) is carried out to transistor, is then extracted according to awkward silence at a meeting test result brilliant
The ectoparasitism parameter of body pipe.Ectoparasitism parameter is not change with frequency and transistor biasing point.
Thermal field test (i.e. hot-FET test) is carried out under the conditions of multiple and different bias points to transistor, then according to heat
Field test result and extracted ectoparasitism parameter, and matrix transformation theory is used, extract the intrinsic parameters of transistor.It is intrinsic
Parameter may be considered not varying with frequency in model operating frequency range.
S3: establishing the small signal equivalent circuit model of transistor according to intrinsic parameters and ectoparasitism parameter, and from intrinsic
Grid electricity is obtained in parameter with the variation relation of gate source voltage.
Wherein, the small signal equivalent circuit model of transistor is the basis for establishing transistor nonlinear model, therefore, this step
Small signal equivalent circuit model is initially set up in rapid.Intrinsic parameters include grid electricity with the variation relation of gate source voltage, can be
Subsequent nonlinear model of establishing is prepared.
S4: grid electricity is subjected to higher derivation to gate source voltage, chooses grid electricity to three order derivatives of gate source voltage
Establish electricity empirical model.
Wherein, grid electricity C is chosengTo gate source voltage VgsThree order derivatives establish electricity empirical model, according to Fourier
Series expansion is theoretical, and three ranks item may include the harmonic information of nonlinear function substantially, meets high efficiency power amplifier
Design requirement, so as to ignore the influence of higher order term error, and compared to drain-to-gate voltage Vgd, gate source voltage VgsTo grid
The influence of pole electricity is bigger.Wherein, g, s, d respectively indicate grid, source electrode and drain electrode.
The embodiment of the present invention is by taking GaAs pHEMT transistor as an example, according to its grid electricity CgWith gate source voltage VgsVariation
Compression property chooses " sech " function and " tanh " function to describe grid electricity CgTo gate source voltage VgsThree order derivatives with grid
Source voltage VgsVariation relation, meanwhile, " sech " function and " tanh " function high-order can continuously be led, and model can be made to have preferable
Convergence.Grid electricity CgTo gate source voltage VgsThree order derivatives experience analytical expression it is as follows:
Cg3=a1·tanh(a2·V1)·sech2(a2·V1)+b1·tanh(b2·V2)·sech2(b2·V1)
(1)
V1=Vgs-Vmax
V2=Vgs-Vmin
VmaxAnd VminRespectively indicate grid electricity CgSecond dervative maximum value and the corresponding gate source voltage of minimum point
Vgs, a1、a2、b1、b2For fitting parameter.By carrying out triple integral to formula (1), it can obtain grid electricity CgExpression formula.
Preferably, in order to meet gate charge law of conservation, guarantee the preferable convergence of model, by grid electricity CgIt is assigned as grid source electricity
Measure CgsWith grid leak electricity CgdWhen, it is handled using symmetrical smooth function similar with EE-HEMT electricity model.
S5: carrying out direct current voltage test to transistor, and the drain current measured is carried out high-order to gate source voltage and is asked
It leads, and chooses drain current and electric current empirical model is established to three order derivatives of gate source voltage.
Wherein, equally by taking GaAs pHEMT transistor as an example, according to its transistor transconductance gmWith VgsThe compression property of variation,
It is same to choose " sech " function and " tanh " function to describe drain current IdsTo gate source voltage VgsThree order derivatives with grid source electricity
Press VgsVariation relation.Drain current IdsTo gate source voltage VgsThree order derivatives experience analytical expression it is as follows:
gm3=gm3(Vgs)·tanh(a·Vds)·(1+γ·Vds) (2)
gm3(Vgs)=m1·tanh(m2·Vp1)·sech2(m2·Vp1)+n1·tanh(n2·Vp2)·sech2(n2·
Vp2)
Vp1=Vgs-Vmaxg
Vp2=Vgs-Vming
VmaxgAnd VmingRespectively indicate drain current IdsTo gate source voltage VgsSecond dervative maximum value and minimum point
Corresponding gate source voltage Vgs, m1、m2、n1、n2For fitting parameter.(1+γ·Vds) indicate channel-length modulation influence.It is logical
It crosses and triple integral is carried out to formula (2), it can obtain drain current IdsExpression formula.It is preferably, theoretical according to dynamic load line,
High efficiency switch power-like amplifier operates mainly in pinch off region and linear zone, and therefore, the fitting precision in the two regions needs
It pays the utmost attention to, when carrying out DC current-voltage tester, the variation stepping of bias voltage needs that phase is arranged to obtain in the two regions
To smaller；Meanwhile the fuel factor of high efficiency switch power-like amplifier relative to general A class or AB power-like amplifier compared with
It is small, therefore the influence of fuel factor is had ignored in the model.
S6: load balance factor test is carried out to transistor and obtains test data, by small signal equivalent circuit model, electricity experience
Model and electric current empirical model obtain the nonlinear model of transistor, and carry out circuit simulation simulation and obtain emulation data, determine
Emulate the degree of agreement of data and test data.
Wherein, load balance factor test is carried out to transistor, obtaining transistor includes gain under each impedance conditions, base
Wave and harmonic output power, efficiency are with the test data including the variation relation of input power.It will be by small-signal equivalent circuit mould
The transistor that type, electricity empirical model and electric current empirical model obtain nonlinear model embedded circuit simulation software (such as ADS,
AWR etc.) in carry out circuit simulation simulation obtain emulation data.Contrast test data and emulation data can determine that degree of agreement supplies
Designer's reference.If degree of agreement is unsatisfactory for requiring, can with revised equivalent circuit topology or Optimized model parameter, and
High efficiency switch can be carried out if degree of agreement is met the requirements using the transistor modeling method of the embodiment of the present invention again
The design of power-like amplifier.
In the present embodiment, before step S1, transistor modeling method further include: the test structure of transistor is carried out
De- embedding processing.When due to On-wafer measurement, usually it is only capable of test reference face being moved to rf probe end face and calibrates, therefore
The data measured contain the influence of test structure, so the actual performance parameter of transistor in order to obtain, needs to tie test
Structure does De- embedding processing.The concrete mode of De- embedding processing can be the influence that shunt capacitance is eliminated using open-circuit structure, utilize
The influence of short-circuit structure elimination series inductance and resistance.
The above description is only an embodiment of the present invention, is not intended to limit the scope of the invention, all to utilize this hair
Equivalent structure or equivalent flow shift made by bright specification and accompanying drawing content is applied directly or indirectly in other relevant skills
Art field, is included within the scope of the present invention.
Claims (3)
1. a kind of transistor modeling method of high efficiency switch power-like amplifier characterized by comprising
S1: equivalent circuit topology is chosen according to the type of transistor；
S2: awkward silence at a meeting test is carried out to the transistor and carries out thermal field test under the conditions of different bias points, is surveyed according to awkward silence at a meeting
Test result and thermal field test result extract the ectoparasitism parameter and intrinsic parameters of transistor；
S3: establishing the small signal equivalent circuit model of transistor according to the intrinsic parameters and ectoparasitism parameter, and from described
Grid electricity is obtained in intrinsic parameters with the variation relation of gate source voltage；
S4: the grid electricity is subjected to higher derivation to gate source voltage, chooses the grid electricity to three ranks of gate source voltage
Derivative establishes electricity empirical model；
Wherein, grid electricity C is chosengTo gate source voltage VgsThree order derivatives establish electricity empirical model；Wherein, g, s, d distinguish
Indicate grid, source electrode and drain electrode；
According to grid electricity CgWith gate source voltage VgsThe compression property of variation chooses " sech " function and " tanh " function to describe
Grid electricity CgTo gate source voltage VgsThree order derivatives with gate source voltage VgsVariation relation；Grid electricity CgTo gate source voltage Vgs
Three order derivatives experience analytical expression it is as follows:
Cg3=a1·tanh(a2·V1)·sech2(a2·V1)+b1·tanh(b2·V2)·sech2(b2·V1) (1)
V1=Vgs-Vmax
V2=Vgs-Vmin
VmaxAnd VminRespectively indicate grid electricity CgSecond dervative maximum value and the corresponding gate source voltage V of minimum pointgs, a1、
a2、b1、b2For fitting parameter；By carrying out triple integral to formula (1), it can obtain grid electricity CgExpression formula；
S5: carrying out direct current voltage test to the transistor, and the drain current measured is carried out high-order to gate source voltage and is asked
It leads, and chooses drain current and electric current empirical model is established to three order derivatives of gate source voltage；
According to its transistor transconductance gmWith VgsThe compression property of variation, it is same to choose " sech " function and " tanh " function to describe
Drain current IdsTo gate source voltage VgsThree order derivatives with gate source voltage VgsVariation relation；Drain current IdsTo gate source voltage
VGs'sThe experience analytical expression of three order derivatives is as follows:
gm3=gm3(Vgs)·tanh(a·Vds)·(1+γ·Vds) (2)
gm3(Vgs)=m1·tanh(m2·Vp1)·sech2(m2·Vp1)+n1·tanh(n2·Vp2)·sech2(n2·Vp2)
Vp1=Vgs-Vmaxg
Vp2=Vgs-Vming
VmaxgAnd VmingRespectively indicate drain current IdsTo gate source voltage VgsSecond dervative maximum value and minimum point it is corresponding
Gate source voltage Vgs, m1、m2、n1、n2For fitting parameter；(1+γ·Vds) indicate channel-length modulation influence；By right
Formula (2) carries out triple integral, it can obtains drain current IdsExpression formula；
S6: load balance factor test is carried out to the transistor and obtains test data, by the small signal equivalent circuit model, electricity
Empirical model and electric current empirical model obtain the nonlinear model of transistor, and carry out circuit simulation simulation and obtain emulation data,
Determine the degree of agreement of the emulation data and the test data.
2. the transistor modeling method of high efficiency switch power-like amplifier according to claim 1, which is characterized in that
Before step S1, the transistor modeling method further include: De- embedding processing is carried out to the test structure of transistor.
3. the transistor modeling method of high efficiency switch power-like amplifier according to claim 2, which is characterized in that institute
The concrete mode for stating De- embedding processing is that the influence of shunt capacitance is eliminated using open-circuit structure, eliminates series electrical using short-circuit structure
The influence of sense and resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610244706.1A CN105956228B (en) | 2016-04-19 | 2016-04-19 | The transistor modeling method of high efficiency switch power-like amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610244706.1A CN105956228B (en) | 2016-04-19 | 2016-04-19 | The transistor modeling method of high efficiency switch power-like amplifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105956228A CN105956228A (en) | 2016-09-21 |
| CN105956228B true CN105956228B (en) | 2019-03-12 |
Family
ID=56917617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610244706.1A Active CN105956228B (en) | 2016-04-19 | 2016-04-19 | The transistor modeling method of high efficiency switch power-like amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105956228B (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108153926B (en) * | 2016-12-02 | 2023-04-07 | 新加坡国立大学 | Method for establishing analytic model of semiconductor device based on empirical formula |
| CN107194127A (en) * | 2017-06-30 | 2017-09-22 | 苏州芯智瑞微电子有限公司 | A kind of transistor modeling method based on burst pulse weak-signal measurement |
| CN111079361B (en) * | 2019-12-07 | 2023-05-02 | 复旦大学 | Load modeling method of FPGA circuit |
| CN111880003B (en) * | 2020-08-06 | 2023-08-11 | 广州大学 | Method for extracting harmonic balance parameters of radio frequency power amplifier based on neural network |
| CN112257367A (en) * | 2020-11-11 | 2021-01-22 | 天津大学 | Transistor small signal scalable model modeling method based on hybrid scaling rule |
| CN112597735B (en) * | 2021-03-03 | 2021-07-20 | 深圳市迅特通信技术股份有限公司 | Simulation method, device and system of electro-absorption modulator and computer storage medium |
| CN113486618B (en) * | 2021-05-17 | 2022-09-09 | 西安电子科技大学 | Characterization method of semiconductor device large signal characteristic |
| CN113361101B (en) * | 2021-06-04 | 2022-10-11 | 厦门市三安集成电路有限公司 | Diode parameter extraction method suitable for deep turn-off and model establishment method |
| CN114970429A (en) * | 2022-06-20 | 2022-08-30 | 杭州电子科技大学 | Analytic-numerical hybrid design method of class-E power amplifier |
| CN115270679B (en) * | 2022-09-28 | 2022-12-09 | 电子科技大学 | Modeling method of GaN transistor based on Angelov model |
| CN117391024B (en) * | 2023-12-12 | 2024-02-23 | 浙江集迈科微电子有限公司 | Modeling method and device for GaN HEMT switching device, storage medium and terminal |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104573173A (en) * | 2014-11-19 | 2015-04-29 | 东南大学 | Transistor small signal equivalent circuit model |
| CN105373660A (en) * | 2015-11-12 | 2016-03-02 | 成都嘉石科技有限公司 | Equivalent circuit-based transistor reliability representation method |
-
2016
- 2016-04-19 CN CN201610244706.1A patent/CN105956228B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104573173A (en) * | 2014-11-19 | 2015-04-29 | 东南大学 | Transistor small signal equivalent circuit model |
| CN105373660A (en) * | 2015-11-12 | 2016-03-02 | 成都嘉石科技有限公司 | Equivalent circuit-based transistor reliability representation method |
Non-Patent Citations (2)
| Title |
|---|
| 《Accurate pHEMT nonlinear modeling in the presence of low-frequency dispersive effects》;Antonio Raffo等;《IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES》;20051130;第53卷(第11期);第3449-3459页 |
| 《改进的AlGaN_GaNHEMT小信号参数提取算法》;徐鹏等;《真空科学与技术学报》;20120531;第32卷(第5期);第404-407页 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105956228A (en) | 2016-09-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105956228B (en) | The transistor modeling method of high efficiency switch power-like amplifier | |
| Root | Future device modeling trends | |
| CN106372357B (en) | A kind of GaN HEMT nonlinear noise method for establishing model | |
| Jang et al. | Model-based nonlinear embedding for power-amplifier design | |
| CN104573173B (en) | A kind of transistor small signal equivalent-circuit model | |
| CN104298837A (en) | Device equivalent circuit model parameter extracting method and bonding pad parasitic parameter extracting method | |
| CN106909751A (en) | A kind of coupled thermomechanics method for establishing model for being applied to MMIC designs | |
| Lai et al. | A new pinched-off cold-FET method to determine parasitic capacitances of FET equivalent circuits | |
| CN112069759B (en) | GaN transistor modeling method and device based on Angelov model | |
| CN206421387U (en) | AlGaN/GaN HEMT small-signal models | |
| Zheng et al. | A scalable active compensatory sub-circuit for accurate GaN HEMT large signal models | |
| Collantes et al. | A new large-signal model based on pulse measurement techniques for RF power MOSFET | |
| Gibiino et al. | Charge-conservative GaN HEMT nonlinear modeling from non-isodynamic multi-bias S-parameter measurements | |
| Siligaris et al. | A new empirical nonlinear model for sub-250 nm channel MOSFET | |
| Root et al. | Compact and behavioral modeling of transistors from NVNA measurements: New flows and future trends | |
| Zhong et al. | A consistent charge model of GaAs MESFETs for $ Ku $-band power amplifiers | |
| Weiß et al. | 80 ns/45 GHz Pulsed measurement system for DC and RF characterization of high speed microwave devices | |
| Foisy et al. | Large-signal relaxation-time model for HEMTs and MESFETs | |
| Angelov et al. | Experiment design for quick statistical FET large signal model extraction | |
| Wu et al. | CMOS 90 nm multi-bias transistor model Up to 66 GHz | |
| Wilk et al. | SOI MESFET RF power amplifiers at the 45nm node | |
| Baylis et al. | Understanding pulsed IV measurement waveforms | |
| Weiß et al. | Pulsed i (v)—pulsed rf measurement system for microwave device characterization with 80ns/45ghz | |
| Crupi et al. | Non-linear look-up table modeling of GaAs HEMTs for mixer application | |
| Vadalà et al. | GaN HEMT model with enhanced accuracy under back-off operation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |