CN106909741A - A kind of modeling method of microwave GaN power devices - Google Patents
A kind of modeling method of microwave GaN power devices Download PDFInfo
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Abstract
The present invention discloses a kind of modeling method of microwave GaN power devices, and the modeling method includes：GaN power device small signal equivalent circuit models are set up, small-signal model parameter is extracted；Many biasing scattering parameters according to actual measurement carry out small-signal model parameter optimization；GaN power device large signal equivalent circuit models are set up, large-signal model parameter is extracted；It is target with many biasing scattering parameters and large signal characteristic parameter surveyed, tuning optimization large-signal model parameter；Multiple batches of GaN power devices are modeled according to above-mentioned steps, obtain the scattering parameter and big signal statistics model of processing line.The modeling method of microwave GaN power devices of the present invention is by setting up GaN power devices small signal equivalent circuit model and GaN power device large signal equivalent circuit models, the scattering parameter and large signal characteristic statistical model of GaN processing lines are set up according to model parameter statistical property, so as to realize the accurate modeling of small-signal and large signal characteristic to a certain special process line, the degree of accuracy of model is improved.
Description
Technical field
The present invention relates to GaN HEMT (GaN high electron mobility transistor) device arts, more particularly to one
Plant the modeling method of microwave GaN power devices.
Background technology
GaN high electron mobility transistor (GaN HEMT) due to characteristics such as its high frequency, high power densities, in microwave
There is particularly important application in millimeter wave solid state power circuit.The main stream approach of current circuit design is generally with equivalent circuit shape
Based on the device model of characteristic of the formula outlines device under the conditions of small-signal operation condition and large signal operation, therefore device model
It is the premise that circuit design is carried out using device.
But, there is unintentionally doping and technological parameter fluctuation in the technique prepared due to device, device performance can be influenceed
Uniformity, so as to influence the yield rate of circuit design, it is therefore desirable to by set up comprising purposes of statistical process characteristic circuit model
Circuit yield is instructed to analyze.Traditional device method is all based on the small-signal model or big signal mode of single GaN device
The method of shape parameter is analyzed, it is impossible to analyze multiple GaN power devices statistical properties prepared by a processing line, therefore in essence
It is not enough on degree.
The content of the invention
It is an object of the invention to provide a kind of microwave GaN power device modeling methods, the multiple batches of GaN work(of foundation can be improved
The degree of accuracy of rate device model.
To achieve the above object, the invention provides following scheme：
A kind of modeling method of microwave GaN power devices, the modeling method includes：
Step one：GaN power device small signal equivalent circuit models are set up, small-signal model parameter is extracted；
Step 2：Many biasing scattering parameters according to actual measurement carry out small-signal model parameter optimization；
Step 3：GaN power device large signal equivalent circuit models are set up, large-signal model parameter, the big letter is extracted
Number model parameter includes non-linear current source model parameter and Nonlinear capacitance model parameter；
Step 4：Many biasing scattering parameters and large signal characteristic parameter with the actual measurement of device are as target, and tuning optimization is big
Signal model parameters；
Step 5：Multiple batches of GaN power devices are modeled according to aforementioned four step, obtain the scattering ginseng of processing line
Number and big signal statistics model.
Optionally, the small-signal model parameter includes parasitic parameter and intrinsic parameters；Wherein, the parasitic parameter includes
Parasitic capacitance, dead resistance, stray inductance, the intrinsic parameters include intrinsic capacity, intrinsic resistance, current source and output electricity
Lead.
Optionally, the method for extracting small-signal model parameter includes：
The GaN power devices tested in the GaN power devices small signal equivalent circuit model are under pinch off state
Scattering parameter；
Parasitic parameter in the small signal equivalent circuit model is extracted according to the scattering parameter under the pinch off state；
Whole parasitic parameters is gone it is embedding after, calculate the corresponding small-signal model parameter of each bias point.
Optionally, the method that many biasing scattering parameters according to actual measurement carry out small-signal model parameter optimization includes：
Simulated scatter parameter is obtained by emulation according to the small-signal model parameter；
The simulated scatter parameter with the scattering parameter of actual measurement contrast and obtains scattering parameter matched curve；
First tuner parameters are set, and the degree of fitting according to the scattering parameter matched curve repeats the tuning ginseng of modification first
Number, until the degree of fitting of the scattering parameter matched curve meets the first given threshold.
Optionally, the method for extracting large-signal model parameter includes：
The GaN power devices in the large signal equivalent circuit model that the GaN power devices technological parameter is associated are carried out
Test, obtains pulse I-V test datas and static state I-V test datas；
According to parameter unrelated with natural effect in pulse I-V test datas extraction Ids models；
With trap effect and self-heating effect in joint pulse I-V test datas and static state I-V test datas extraction Ids models
Relevant parameter；
According to related with trap effect and self-heating effect in parameter unrelated to self-heating effect in Ids models, Ids models
Parameter emulate and obtains pulse I-V emulation data and static state I-V emulation data；
By pulse I-V emulation data and static state I-V emulate data respectively with corresponding pulse I-V test datas and static state I-
V test datas are contrasted, and obtain I-V matched curves；
Degree of fitting according to the I-V matched curves repeats modification second tune parameter, until the I-V matched curves
Degree of fitting meets the second given threshold；And
The intrinsic capacity in intrinsic parameters is extracted, is intended by target of value of the intrinsic capacity under many biasings
Close, be calculated Nonlinear capacitance model parameter；
The Nonlinear capacitance model parameter that will be calculated is contrasted with the Nonlinear capacitance model parameter extracted, and is obtained
Contrast；
3rd tuner parameters are set, the 3rd tuner parameters of modification are repeated according to the contrast, to tune nonlinear capacitance
Model parameter, until the contrast meets the 3rd given threshold.
Optionally, the method for the tuning optimization large-signal model parameter includes：
Import the small-signal scattering parameter and large signal characteristic parameter of actual measurement；Wherein, the large signal characteristic parameter includes
Power output, power added efficiency and gain；
4th tuner parameters, the microwave property of calculating device are set；Wherein described 4th tuner parameters are included in Ids models
All parameters.
Optionally, the method for the scattering parameter and large signal characteristic statistical model that obtain processing line includes：
All parameters and all ginsengs of Nonlinear capacitance model in all component parameters, Ids models in statistics small-signal model
Number.
According to the specific embodiment that the present invention is provided, the invention discloses following technique effect：
The modeling method of microwave GaN power devices of the present invention is by initially setting up GaN power device small-signal equivalent circuits
Model, then sets up GaN power device large signal equivalent circuit models, and GaN works are set up finally according to model parameter statistical property
The scattering parameter and large signal characteristic statistical model of skill line, so as to realize special to the small-signal of a certain special process line and big signal
Property accurate modeling, improve model the degree of accuracy.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to institute in embodiment
The accompanying drawing for needing to use is briefly described, it should be apparent that, drawings in the following description are only some implementations of the invention
Example, for those of ordinary skill in the art, without having to pay creative labor, can also be according to these accompanying drawings
Obtain other accompanying drawings.
Fig. 1 is the flow chart of the modeling method of microwave GaN power devices provided in an embodiment of the present invention；
Fig. 2 is the small signal equivalent circuit model schematic diagram of GaN power devices；
Fig. 3 is the large signal equivalent circuit model schematic of GaN power devices；
Fig. 4 is by emulation and the comparison diagram of the scattering parameter of actual measurement in statistical model；
Fig. 5 is to compare figure by the power output for emulating and survey in statistical model.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
It is an object of the invention to provide a kind of modeling method of microwave GaN power devices, by initially setting up GaN power devices
Part small signal equivalent circuit model, then sets up GaN power device large signal equivalent circuit models, finally according to model parameter system
Meter characteristic sets up the scattering parameter and large signal characteristic statistical model of GaN processing lines, so as to realize to a certain special process line
The accurate modeling of small-signal and large signal characteristic, improves the degree of accuracy of model.
It is below in conjunction with the accompanying drawings and specific real to enable the above objects, features and advantages of the present invention more obvious understandable
The present invention is further detailed explanation to apply mode.
As shown in figure 1, the modeling method of microwave GaN power devices of the present invention includes：
Step 110：GaN power device small signal equivalent circuit models are set up, small-signal model parameter is extracted.
Step 120：Many biasing scattering parameters according to actual measurement carry out small-signal model parameter optimization.
Step 130：GaN power device large signal equivalent circuit models are set up, large-signal model parameter is extracted wherein, institute
Stating large-signal model parameter includes non-linear current source model parameter and Nonlinear capacitance model parameter.
Step 140：Many biasing scattering parameters and large signal characteristic parameter with the actual measurement of device are as target, and tuning optimization is big
Signal model parameters.
Step 150：Multiple batches of GaN power devices are modeled according to aforementioned four step, obtain the scattering of processing line
Parameter and big signal statistics model.
Further, the small-signal model parameter includes parasitic parameter and intrinsic parameters；Wherein, the parasitic parameter bag
Parasitic capacitance, dead resistance, stray inductance are included, the intrinsic parameters include intrinsic capacity, intrinsic resistance, current source and output electricity
Lead.
As shown in Fig. 2 inframe is intrinsic part, the value of small-signal model intrinsic parameters is related to biasing；Outer frame is to post
First portion, the value of parasitic parameter is unrelated with biasing.Cpgi, Cpdi and Cgdi represent interelectrode capacity and air bridges electric capacity, Cpga,
Cpda and Cgda represent be connected with pad, the hand capacity of probe and equipment, Lg, Ld and Ls represent stray inductance, Rg, Rd and Rs
Represent dead resistance, Cgd, Cgs and Cds be intrinsic capacity, Ids is current source, and Rgd and Ri is intrinsic resistance；Gds is output
Conductance.
Wherein, in step 110, the method for extracting small-signal model parameter includes：
Step 111：The GaN power devices tested in the GaN power devices small signal equivalent circuit model are in pinch off
Scattering parameter under state；
Step 112：Posting in the scattering parameter extraction small signal equivalent circuit model under the pinch off state
Raw parameter；
Step 113：Embedding, the corresponding small-signal model parameter of each bias point of calculating is gone to whole parasitic parameters.
Specifically, in small signal equivalent circuit model, making GaN power devices be in pinch off state (the pinch off state
For：Source ground, less than the pinch-off voltage of GaN power devices, drain-source bias voltage Vds is equal to zero) for grid source bias voltage Vgs.
Scattering parameter of the GaN power devices tested in the small signal equivalent circuit model under pinch off state, enters
One step extracts parasitic parameter according to the scattering parameter under pinch off state, specifically, first by the low-frequency data under pinch off state
Extract parasitic capacitance；Then embedding, extraction stray inductance and dead resistance are gone to parasitic capacitance；All parasitic parameters are gone again it is embedding,
Each intrinsic parameters are calculated one by one in each bias point.The state of each bias point can be Vgs=-4~0V, be spaced 0.5V；Vds=0~
35V, is spaced 5V.
Wherein, in the step 120, many biasing scattering parameters according to actual measurement carry out small-signal model parameter optimization
Method includes：
Step 121：Simulated scatter parameter is obtained by emulation according to the small-signal model parameter；
Step 122：The simulated scatter parameter and the scattering parameter of actual measurement contrast and obtains scattering parameter fitting song
Line (as shown in Figure 4)；
Step 123：First tuner parameters are set, and the degree of fitting according to the scattering parameter matched curve repeats modification first
Tuner parameters, until the degree of fitting of the scattering parameter matched curve meets the first given threshold.
In step 130, the method for extracting large-signal model parameter includes：
Step 131：To the GaN power in the large signal equivalent circuit model that the GaN power devices technological parameter is associated
Device is tested, and obtains pulse I-V test datas and static state I-V test datas；
Step 132：According to parameter unrelated with self-heating effect in pulse I-V test datas extraction Ids models；
Step 133：Joint pulse I-V test datas and static state I-V test datas extract in Ids models with trap effect and
The related parameter of self-heating effect；
Step 134：According in parameter unrelated with self-heating effect in Ids models, Ids models with trap effect and from thermal effect
Should related parameter emulate and obtain pulse I-V emulation data and static state I-V emulation data；
Step 135：By pulse I-V emulation data and static state I-V emulate data respectively with corresponding pulse I-V test datas
Contrasted with static I-V test datas, obtained I-V matched curves；
Step 136：Degree of fitting according to the I-V matched curves repeats modification second tune parameter, until the I-V intends
The degree of fitting for closing curve meets the second given threshold；And
Step 137：The intrinsic capacity in intrinsic parameters is extracted, with value of the intrinsic capacity under many biasings as target
It is fitted, obtains the Nonlinear capacitance model parameter for calculating；
Step 138：The Nonlinear capacitance model parameter of the calculating is carried out with the Nonlinear capacitance model parameter extracted
Contrast, obtains contrast；
Step 139：3rd tuner parameters are set, the 3rd tuner parameters of modification are repeated according to the contrast, it is non-to tune
Linear capacitance model parameter, until the contrast meets the 3rd given threshold.
It is illustrated in figure 3 a kind of large signal equivalent circuit model schematic of typical GaN power devices.To characterize GaN
The self-heating effect and trap effect of power device, add the parameter for characterizing device self-heating effect and trap effect in Ids models.
Because pulse I-V tests can obtain I-V curve of the device under specified self-heating effect and trap effect, so in Ids moulds
When shape parameter is extracted, pulse I-V test datas and static state I-V test datas need to be simultaneously used.
Specifically, to the GaN power in the large signal equivalent circuit model that the GaN power devices technological parameter is associated
Device is tested, and obtains pulse I-V test datas and static state I-V test datas.
After pulse I-V test datas and static state I-V test datas are imported, " starting to calculate " is clicked on, it is bent to be fitted I-V
Line is target, obtains all parameters of Ids models.Wherein, pulse I-V test datas be used for extracting in Ids models with from thermal effect
Unrelated parameter is answered, after obtaining unrelated with self-heating effect parameter in Ids models, then pulse I-V and static state I-V surveys is used in combination
The trap effect parameter related to self-heating effect in examination data extraction Ids models.
In the present embodiment, the Nonlinear capacitance model parameter includes Cgs and Cgd nonlinear model shape parameters.Specifically
, comparative examples of the Cgs and Cgd that will be obtained in step 100 under many biasings is imported clicks on " starting to calculate ", with Cgs and Cgd
Value under bias is calculated Cgs and Cgd Nonlinear capacitance model parameters more for target is fitted treatment.It is therein
Parameter extraction algorithm, by theory deduction, is extracted based on the Angelov capacitor models being widely used in the way of parsing
Each model parameter.After calculating is finished, click on " preservation ", model parameter is stored in the path that user specifies by software.
If being unsatisfied with (not meeting the 3rd given threshold) to the contrast, the 3rd tuner parameters are set, modification the 3rd is adjusted
Humorous parameter, is clicked on " tuning ", Cgs and Cgd Nonlinear capacitance models ginseng is recalculated according to amended 3rd tuning parameter values
Number, and fitting effect is updated.Tuning process is repeated, after obtaining satisfied parameter value, is clicked on " preservation ", software is by newest mould
Shape parameter is stored in the path that user specifies.
In step 140, the method for the tuning optimization large-signal model parameter includes：
Step 141：Import the small-signal scattering parameter and large signal characteristic parameter of actual measurement.Wherein, the large signal characteristic
Parameter includes power output (as shown in Figure 5), power added efficiency and gain.
Step 142：4th tuner parameters, the microwave property of calculating device are set.
Wherein, wherein the 4th tuner parameters include all parameters in Ids models.
The microwave property of GaN power devices is imported, is clicked on " importing measured data ", and then the big signal equivalent electric for calculating
The microwave property of road model is drawn in the same coordinate system with the microwave property of actual measurement and is contrasted.If to simulation result with
The fitting effect of measured data is unsatisfied with, and changes the 4th tuner parameters, clicks on " tuning ", according to amended 4th tuner parameters
The microwave property of large signal equivalent circuit model is recalculated, and the simulation result that will be emulated in actual measurement comparison diagram updates.Repeat
Tuning process, after obtaining satisfied parameter value, the path that user specifies is stored in by newest model parameter.
Additionally, after all step 100 is carried out to high-volume, multiple batches of GaN power devices, that is, having obtained each device
All parameters in small signal equivalent circuit model.All parameters in small-signal equivalent circuit of each device are stored
In under the path that user specifies.
When data are imported, it would be desirable to do the institute in small-signal equivalent circuit of all devices of each batch of statistical analysis
There is parameter to import.Selection will do the parameter of statistical analysis, and (this software can realize the statistics of Rg, Rd, Rs, Cgs, Cgd, Cds and Gm
Analysis).By traveling through each parameter one by one, obtain by the histogram frequency distribution diagram of statistical parameter and value distribution scatter diagram.Calculate
After finishing, each all devices of batch are different with same batch by the histogram frequency distribution diagram of statistical parameter under drawing the bias voltage
Device is distributed scatter diagram by the value of statistical parameter.
After step 110- steps 140 have all been carried out to high-volume, multiple batches of GaN power devices, to GaN power devices
Model parameter carries out statistical property modeling, obtains the statistics scattering parameter and big signal statistics model of processing line.Wherein, it is described to obtain
The scattering parameter and large signal characteristic statistical model for obtaining processing line include：All component parameters, Ids moulds in statistics small-signal model
All parameters and all parameters of Nonlinear capacitance model in type.
The beneficial effect of the modeling method of microwave GaN power devices of the present invention：
First, the present invention develops the Automatic parameter extracting method of small-signal model and large-signal model, and proposes
Small-signal model and large-signal model tuning optimisation technique.Complete small-signal can obtain by operation after programming realization software
Model and large-signal model, greatly reduce modeling work amount, significantly improve modeling efficiency.
Second, the present invention realizes the statistical model of small-signal model and large-signal model, being capable of different batches of accurate simulation
The scattering parameter of different components and big signal microwave property in secondary device and same batch.
Additionally, GaN power device purposes of statistical process model modelling approach pair of the present invention based on large signal equivalent circuit model
Other semi-conducting materials (such as silicon, GaAs, indium phosphide, diamond etc.) device is applicable, wide using scope.
Each embodiment is described by the way of progressive in this specification, and what each embodiment was stressed is and other
The difference of embodiment, between each embodiment identical similar portion mutually referring to.
Specific case used herein is set forth to principle of the invention and implementation method, and above example is said
It is bright to be only intended to help and understand the method for the present invention and its core concept；Simultaneously for those of ordinary skill in the art, foundation
Thought of the invention, will change in specific embodiments and applications.In sum, this specification content is not
It is interpreted as limitation of the present invention.
Claims (7)
1. a kind of modeling method of microwave GaN power devices, it is characterised in that the modeling method includes：
Step one：GaN power device small signal equivalent circuit models are set up, small-signal model parameter is extracted；
Step 2：Many biasing scattering parameters according to actual measurement carry out small-signal model parameter optimization；
Step 3：GaN power device large signal equivalent circuit models are set up, large-signal model parameter, the big signal mode is extracted
Shape parameter includes non-linear current source model parameter and Nonlinear capacitance model parameter；
Step 4：As target, tuning optimizes big signal to many biasing scattering parameters and large signal characteristic parameter with the actual measurement of device
Model parameter；
Step 5：Multiple batches of GaN power devices are modeled according to aforementioned four step, obtain processing line scattering parameter and
Big signal statistics model.
2. the modeling method of microwave GaN power devices according to claim 1, it is characterised in that the small-signal model
Parameter includes parasitic parameter and intrinsic parameters；Wherein, the parasitic parameter includes parasitic capacitance, dead resistance, stray inductance, institute
Stating intrinsic parameters includes intrinsic capacity, intrinsic resistance, current source and output conductance.
3. the modeling method of microwave GaN power devices according to claim 1, it is characterised in that the extraction small-signal
The method of model parameter includes：
Scattering of the GaN power devices tested in the GaN power devices small signal equivalent circuit model under pinch off state
Parameter；
Parasitic parameter in the small signal equivalent circuit model is extracted according to the scattering parameter under the pinch off state；
Whole parasitic parameters is gone it is embedding after, calculate the corresponding small-signal model parameter of each bias point.
4. the modeling method of microwave GaN power devices according to claim 1, it is characterised in that described according to actual measurement
The method that many biasing scattering parameters carry out small-signal model parameter optimization includes：
Simulated scatter parameter is obtained by emulation according to the small-signal model parameter；
The simulated scatter parameter with the scattering parameter of actual measurement contrast and obtains scattering parameter matched curve；
First tuner parameters are set, and the degree of fitting according to the scattering parameter matched curve repeats the first tuner parameters of modification, directly
Degree of fitting to the scattering parameter matched curve meets the first given threshold.
5. microwave GaN power device modeling methods according to claim 2, it is characterised in that the big signal mode of extraction
The method of shape parameter includes：
The GaN power devices in the large signal equivalent circuit model that the GaN power devices technological parameter is associated are tested,
Obtain pulse I-V test datas and static state I-V test datas；
According to parameter unrelated with natural effect in pulse I-V test datas extraction Ids models；
With trap effect and the phase of self-heating effect in joint pulse I-V test datas and static state I-V test datas extraction Ids models
Related parameter；
According to parameter related with trap effect and self-heating effect in parameter unrelated to self-heating effect in Ids models, Ids models
Emulate and obtain pulse I-V emulation data and static state I-V emulation data；
Pulse I-V is emulated into data and static state I-V emulation data are surveyed with corresponding pulse I-V test datas and static state I-V respectively
Examination data are contrasted, and obtain I-V matched curves；
Degree of fitting according to the I-V matched curves repeats modification second tune parameter, until the fitting of the I-V matched curves
Degree meets the second given threshold；And
The intrinsic capacity in intrinsic parameters is extracted, is fitted by target of value of the intrinsic capacity under many biasings, counted
Calculation obtains Nonlinear capacitance model parameter；
The Nonlinear capacitance model parameter that will be calculated is contrasted with the Nonlinear capacitance model parameter extracted, and is contrasted
Degree；
3rd tuner parameters are set, the 3rd tuner parameters of modification are repeated according to the contrast, to tune Nonlinear capacitance model
Parameter, until the contrast meets the 3rd given threshold.
6. microwave GaN power device modeling methods according to claim 5, it is characterised in that the big letter of tuning optimization
The method of number model parameter includes：
Import the small-signal scattering parameter and large signal characteristic parameter of actual measurement；Wherein, the large signal characteristic parameter includes output
Power, power added efficiency and gain；
4th tuner parameters, the microwave property of calculating device are set；Wherein described 4th tuner parameters include owning in Ids models
Parameter.
7. the modeling method of microwave GaN power devices according to claim 1, it is characterised in that the acquisition processing line
Scattering parameter and large signal characteristic statistical model include：
All parameters and all parameters of Nonlinear capacitance model in all component parameters, Ids models in statistics small-signal model.
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| CN108520084A (en) * | 2018-01-31 | 2018-09-11 | 电子科技大学 | A kind of microwave gallium nitride device non-linear current model parameter extraction method and system |
| CN108520084B (en) * | 2018-01-31 | 2020-04-17 | 电子科技大学 | Microwave gallium nitride device nonlinear current model parameter extraction method and system |
| CN110456248A (en) * | 2019-07-29 | 2019-11-15 | 中国电子科技集团公司第五十五研究所 | A kind of gallium nitride device carrier concentration profile analysis method based on arrow net test |
| CN110456248B (en) * | 2019-07-29 | 2021-09-17 | 中国电子科技集团公司第五十五研究所 | Gallium nitride device carrier concentration distribution analysis method based on vector network test |
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