CN107733220A - The drive circuit that a kind of anti-half-bridge or full-bridge switching power supply circuit mislead - Google Patents
The drive circuit that a kind of anti-half-bridge or full-bridge switching power supply circuit mislead Download PDFInfo
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- CN107733220A CN107733220A CN201711157467.7A CN201711157467A CN107733220A CN 107733220 A CN107733220 A CN 107733220A CN 201711157467 A CN201711157467 A CN 201711157467A CN 107733220 A CN107733220 A CN 107733220A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 238000002955 isolation Methods 0.000 claims description 8
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/38—Means for preventing simultaneous conduction of switches
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
Abstract
The invention belongs to switch power technology field, disclose the drive circuit that a kind of anti-half-bridge or full-bridge switching power supply circuit drives crosstalk misleads, add a metal-oxide-semiconductor connected with electric capacity between switching tube G, S poles, and make its driving opposite with switching tube driving, so that metal-oxide-semiconductor turns off when switching tube is opened, electric capacity is not incorporated between GS, does not interfere with the switching speed and efficiency of major loop switching tube；When main switch turns off, metal-oxide-semiconductor is open-minded, absorbs from crosstalk when being opened to pipe, prevents the straight-through of the same bridge arm switching tube of main circuit；The drive circuit that this anti-half-bridge provided by the invention or full-bridge switching power supply circuit drives crosstalk mislead will not increase driving Vgs service time and turn-off time, on the basis of main circuit PWM switching speeds are not influenceed, when switching tube is closed, so that Cgs adds several times, to also improving several times to the absorbability that pipe disturbs；Realize the power supply product that power density is high under high switching frequency, high efficiency.
Description
Technical field
The invention belongs to switch power technology field, more particularly to a kind of anti-half-bridge or full-bridge switching power supply circuit
The drive circuit that driving crosstalk misleads.
Background technology
Influence each other i.e. crosstalk of the switching tube of half-bridge circuit or full-bridge circuit under the conditions of high dv/dt can be to drive signal
Cause spike to disturb, and easily cause and pipe is misleaded and then causes device failure.As shown in Figure 1, when upper tube is opened,
A points voltage transient is Vds, causes down tube electric charge redistribution, Cgs and Cgd is charged respectively, if in the presence of filling in charging process
Piezoelectric voltage is too high or resonance causes the Vgs voltages of down tube to reach conducting voltage threshold values, down tube conducting, so that upper down tube is straight
It is logical, cause the aircraft bombing that misleads.
Prior art solves the problem using following methods：
1：The additional electric capacity between switching tube GS, absorb voltge surge caused by crosstalk.
2：Driving is using positive/negative-pressure by the way of, malleation when switching tube turns on, negative pressure during shut-off so that disturbed even if existing,
As long as interference voltage is less than negative pressure+switching tube conducting voltage, all without there is situation about misleading.
The defects of above-mentioned method, is：Additional electric capacity between switching tube GS, driving Vgs service time and pass can be increased
The disconnected time causes the reduction of power supply overall efficiency, can also limit PWM switching frequencies and minimum conducting pulsewidth；Driving is using positive/negative-pressure
Mode increases negative pressure, can aggravate the complexity of drive circuit, and increases the consumption power of driving, and so works as driving voltage
Vgs may cause Vgs reversely to surpass rule, switching tube damage when being disturbed by negative sense.
Because crosstalk is that there is presently no complete solution party as caused by the inherent characteristic of circuit topological structure and device
Case, distributed inductance can only be reduced as far as possible when the design phase drawing PCB, in the base of each side such as balance device efficiency, stability
Compromise is handled on plinth.
The content of the invention
For the disadvantages described above or Improvement requirement of prior art, the invention provides a kind of anti-half-bridge or full-bridge switching power supply
The drive circuit that circuit drives crosstalk misleads, its object is to do not influenceing the switching speed of major loop switching tube and efficiency
In the case of absorb from crosstalk when being opened to pipe, prevent from misleading.
To achieve the above object, according to one aspect of the present invention, there is provided a kind of anti-half-bridge or full-bridge switching power supply electricity
The drive circuit that misleads of road driving crosstalk, between switching tube G, S poles plus metal-oxide-semiconductor connect with electric capacity, its driving and
Switching tube driving is opposite；
When main switch turns off, metal-oxide-semiconductor is open-minded, electric capacity access circuit, absorbs from crosstalk when being opened to pipe, prevents
The same bridge arm switching tube of main circuit is led directly to；When switching tube is opened, metal-oxide-semiconductor is turned off, and above-mentioned electric capacity is not incorporated between GS, main
The switching speed and efficiency of circuit switching pipe are unaffected.
Preferably, the drive circuit that above-mentioned anti-half-bridge or full-bridge switching power supply circuit drives crosstalk misleads, including optocoupler
Isolation circuit, main circuit switch tube drive circuit, phase inverter, metal-oxide-semiconductor and electric capacity C6；
Wherein, the input of optical coupling isolation circuit is used to access pwm signal, and the output signal one of optical coupling isolation circuit, which is divided, is
Two；
Main circuit switch tube drive circuit, the output signal access of main circuit switch tube drive circuit are wherein linked into all the way
The main circuit switch tube grid, for driving being switched on or off for main circuit switch pipe；
Another way is linked into phase inverter, inverter output signal access metal-oxide-semiconductor VT2 G poles, driving metal-oxide-semiconductor VT2；Metal-oxide-semiconductor
VT2 D poles connection electric capacity C6 one end, the electric capacity C6 other end are connected with the switch tube grid of main circuit；Metal-oxide-semiconductor VT2 S poles
It is connected with the source of main circuit switch pipe；So that metal-oxide-semiconductor VT2 drivings and the driving of main circuit switch pipe are just reverse, electric capacity C6 is
For the electric capacity connected with metal-oxide-semiconductor, electric capacity C6 only accesses main circuit when main switch turns off；Wherein, main circuit refer to half-bridge or
The on-off circuit of full-bridge.
Preferably, the drive circuit that above-mentioned anti-half-bridge or full-bridge switching power supply circuit drives crosstalk misleads, its main circuit
Switch tube driving circuit includes driving chip U1, first resistor R5, second resistance R4 and the first diode VD1；
Wherein, second resistance R4 is in parallel with first resistor R5 after being connected with the first diode VD1, and one of parallel connected end is led to
The chip U1 that overdrives is connected to pwm signal, and the input as the main circuit switch tube drive circuit, another parallel connected end is used as
The output end of the main circuit switch tube drive circuit.
Preferably, the drive circuit that above-mentioned anti-half-bridge or full-bridge switching power supply circuit drives crosstalk misleads, its optocoupler every
From being in series with 3rd resistor R8 between the output end of circuit and the input of phase inverter；Its end of connecting passes through the second diode VD2
It is connected with the source electrode of main circuit switch pipe.
Preferably, the drive circuit that above-mentioned anti-half-bridge or full-bridge switching power supply circuit drives crosstalk misleads, its resistance R8
Resistance is 10K, and diode VD2 uses model IN4148 cache switching diodes；Resistance R8 and diode VD2 parasitism electricity
Phase inverter Delayed conducting can be caused by holding the RC delay circuits of composition, by the parameter for setting R8 and VD2 so that main circuit switch pipe
Delay between GS PWM drive signal and metal-oxide-semiconductor VT2 drive signal is as small as possible, realizes only in main circuit switch pipe
C6 can just access the situation of main circuit switch pipe grid source electrode during closing.
In general, by the contemplated above technical scheme of the present invention compared with prior art, it can obtain down and show
Beneficial effect：
(1) drive circuit that anti-half-bridge or full-bridge switching power supply circuit drives crosstalk provided by the invention misleads, will not
Driving Vgs service time and turn-off time is increased, on the basis of main circuit PWM switching speeds are not influenceed, is closed in switching tube
When closing so that Cgs adds several times, to also improving several times to the absorbability that pipe disturbs；Realize high switching frequency, efficiently
The high power supply product of power density under rate；
(2) drive circuit that anti-half-bridge or full-bridge switching power supply circuit drives crosstalk provided by the invention misleads, use
Simple circuit can be achieved to disturb pipe to absorb, and does not increase the complexity of drive circuit, will not also increase the consumption of driving
Power, and realize relatively easy.
Brief description of the drawings
Fig. 1 is bridge circuit major loop topological diagram；
Fig. 2 is the one of the drive circuit that anti-half-bridge or full-bridge switching power supply circuit drives crosstalk provided by the invention misleads
Individual embodiment schematic diagram.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in each embodiment of invention described below
Conflict can is not formed each other to be mutually combined.
The drive circuit that a kind of anti-half-bridge provided by the invention or full-bridge switching power supply circuit drives crosstalk mislead, in master
Add a metal-oxide-semiconductor connected with electric capacity between contactor pipe GS, and its driving is opposite with switching tube driving；So that：When main electricity
Metal-oxide-semiconductor turns off when way switch pipe is opened, and is not incorporated to electric capacity between GS, does not interfere with the switching speed and effect of major loop switching tube
Rate；When main switch turns off, metal-oxide-semiconductor is open-minded, absorbs from crosstalk when being opened to pipe, prevents the same bridge arm switch of main circuit
Pipe is led directly to.It is the drive circuit schematic diagram with metal-oxide-semiconductor and electric capacity of one embodiment of the present of invention shown in Fig. 2；Input is all the way
Drive signal, the main circuit switch pipe drive signal isolated all the way is exported, wherein " GATE " is held for connecting main circuit switch pipe
Grid, " GP " holds the source electrode for connecting main circuit switch pipe.
The drive circuit that the embodiment provides includes optocoupler TLP105, metal-oxide-semiconductor driving chip IXDD609SI, phase inverter
MCI401, metal-oxide-semiconductor VT2, and multiple resistance, electric capacity and diode；The pwm signal of input after light-coupled isolation by being input to two
Individual part, a portion are sent to metal-oxide-semiconductor driving chip IXDD609SI, by driving resistance to drive main switch；Another part is sent
To phase inverter MCI401, its output driving metal-oxide-semiconductor VT2.So that metal-oxide-semiconductor VT2 drivings and the driving of main circuit switch pipe are just reverse.
The switching tube source GP of main circuit by one group of 10uf electric capacity C7,10uf electric capacity C8,0.1uf electric capacity C9 in parallel and
10uf electric capacity C10 is connected to the negative terminal of 5V power supplys.
When main circuit switch pipe turns on, metal-oxide-semiconductor VT2 is turned off, and C6 is not applied in switching tube GS, does not influence main circuit
Switching speed；When main circuit switch pipe is closed, metal-oxide-semiconductor VT2 is turned on, and C6 is added to GS both ends, can effectively be absorbed to pipe
Crosstalk.
In circuit design, the RC delay circuits of R8 resistance and VD2 parasitic capacitances composition can cause anti-phase in drive circuit
Device deferred action, therefore using parasitic capacitance diode VD2 as small as possible so that between GS between PWM drivings and metal-oxide-semiconductor VT2
Delay it is as small as possible.For example metal-oxide-semiconductor VT2 is later than main switch 300ns actions, that is, be delayed 300ns, and between main circuit switch pipe
Dead time be 250ns, then when main circuit switch pipe is opened, metal-oxide-semiconductor VT2 is also not switched off, driving pwm signal except will
Make main circuit switch pipe open-minded, also to be charged to C6, had a strong impact on main circuit switch pipe opens speed.When main circuit is to pipe
When opening, metal-oxide-semiconductor VT2 is also no open-minded, and C6 is also not attached between main circuit GS, can not play crosstalk when suppression is opened to pipe
Effect.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, all any modification, equivalent and improvement made within the spirit and principles of the invention etc., all should be included
Within protection scope of the present invention.
Claims (5)
1. the drive circuit that a kind of anti-half-bridge or full-bridge switching power supply circuit drives crosstalk mislead, it is characterised in that switching
Between G, S pole of pipe plus a metal-oxide-semiconductor for being in series with electric capacity, the driving of the metal-oxide-semiconductor are opposite with switching tube driving；
When main switch turns off, the metal-oxide-semiconductor is open-minded, for absorb from pipe is opened when crosstalk, prevent that main circuit is same
Bridge arm switching tube is led directly to.
2. drive circuit as claimed in claim 1, it is characterised in that driven including optical coupling isolation circuit, main circuit switch pipe
Circuit, phase inverter, metal-oxide-semiconductor and electric capacity；
The input of the optical coupling isolation circuit is used to access pwm signal, and the output signal of optical coupling isolation circuit is divided into two；
The main circuit switch tube drive circuit, the output signal access of main circuit switch tube drive circuit are wherein linked into all the way
Main circuit switch tube grid, for driving being switched on or off for main circuit switch pipe；
Another way is linked into the phase inverter, and inverter output signal accesses the G poles of the metal-oxide-semiconductor to drive metal-oxide-semiconductor；It is described
The D poles of metal-oxide-semiconductor connect one end of the electric capacity, and the other end of electric capacity is connected with the grid of main circuit switch pipe；The S poles of metal-oxide-semiconductor
It is connected with the source electrode of main circuit switch pipe；So that the metal-oxide-semiconductor driving and the driving of main circuit switch pipe are just reverse, electric capacity only exists
Main circuit is accessed during shut-off.
3. drive circuit as claimed in claim 2, it is characterised in that the main circuit switch tube drive circuit includes driving core
Piece U1, first resistor R5, second resistance R4 and the first diode VD1；
The second resistance R4 is in parallel with first resistor R5 after being connected with the first diode VD1, and one of parallel connected end passes through drive
Dynamic chip U1, is connected, the input as the main circuit switch tube drive circuit, another parallel connected end is used as with pwm signal
The output end of the main circuit switch tube drive circuit.
4. drive circuit as claimed in claim 2 or claim 3, it is characterised in that the output end of the optical coupling isolation circuit with it is anti-phase
3rd resistor R8 is in series between the input of device；Its end of connecting passes through the second diode VD2 and the source electrode of main circuit switch pipe
It is connected.
5. drive circuit as claimed in claim 4, it is characterised in that the 3rd resistor R8 resistances are 10K, the described 2nd 2
Pole pipe VD2 uses model IN4148 cache switching diodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711157467.7A CN107733220A (en) | 2017-11-20 | 2017-11-20 | The drive circuit that a kind of anti-half-bridge or full-bridge switching power supply circuit mislead |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711157467.7A CN107733220A (en) | 2017-11-20 | 2017-11-20 | The drive circuit that a kind of anti-half-bridge or full-bridge switching power supply circuit mislead |
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| Publication Number | Publication Date |
|---|---|
| CN107733220A true CN107733220A (en) | 2018-02-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711157467.7A Pending CN107733220A (en) | 2017-11-20 | 2017-11-20 | The drive circuit that a kind of anti-half-bridge or full-bridge switching power supply circuit mislead |
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| CN (1) | CN107733220A (en) |
Citations (8)
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|---|---|---|---|---|
| CN103944549A (en) * | 2014-04-03 | 2014-07-23 | 南京航空航天大学 | High-reliability MOSFET drive circuit |
| CN104506028A (en) * | 2015-01-13 | 2015-04-08 | 山东大学 | SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor) half-bridge circuit driver and half-bridge circuit drive method |
| CN104883038A (en) * | 2015-06-15 | 2015-09-02 | 山东大学 | Half-bridge circuit employing negative voltage to turn off half-bridge circuit driver, and method |
| CN106100297A (en) * | 2016-08-02 | 2016-11-09 | 北京交通大学 | Drive circuit based on silicon carbide MOSFET |
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| WO2017110162A1 (en) * | 2015-12-22 | 2017-06-29 | 三菱電機株式会社 | Gate drive circuit and power conversion device equipped with gate drive circuit |
| CN107342756A (en) * | 2017-08-16 | 2017-11-10 | 重庆大学 | A kind of improvement gate-drive device of suppression SiC MOSFET bridge arm crosstalks |
| CN207766142U (en) * | 2017-11-20 | 2018-08-24 | 武汉华海通用电气有限公司 | The driving circuit that a kind of anti-half-bridge or full-bridge switching power supply circuit mislead |
-
2017
- 2017-11-20 CN CN201711157467.7A patent/CN107733220A/en active Pending
Patent Citations (8)
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|---|---|---|---|---|
| CN103944549A (en) * | 2014-04-03 | 2014-07-23 | 南京航空航天大学 | High-reliability MOSFET drive circuit |
| CN104506028A (en) * | 2015-01-13 | 2015-04-08 | 山东大学 | SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor) half-bridge circuit driver and half-bridge circuit drive method |
| CN104883038A (en) * | 2015-06-15 | 2015-09-02 | 山东大学 | Half-bridge circuit employing negative voltage to turn off half-bridge circuit driver, and method |
| WO2017110162A1 (en) * | 2015-12-22 | 2017-06-29 | 三菱電機株式会社 | Gate drive circuit and power conversion device equipped with gate drive circuit |
| CN106100297A (en) * | 2016-08-02 | 2016-11-09 | 北京交通大学 | Drive circuit based on silicon carbide MOSFET |
| CN106385165A (en) * | 2016-11-08 | 2017-02-08 | 西安交通大学 | SiC MOSFET driving circuit with crosstalk suppression capability |
| CN107342756A (en) * | 2017-08-16 | 2017-11-10 | 重庆大学 | A kind of improvement gate-drive device of suppression SiC MOSFET bridge arm crosstalks |
| CN207766142U (en) * | 2017-11-20 | 2018-08-24 | 武汉华海通用电气有限公司 | The driving circuit that a kind of anti-half-bridge or full-bridge switching power supply circuit mislead |
Non-Patent Citations (1)
| Title |
|---|
| 毛鹏 等: "SiC MOSFET特性分析及驱动电路研究", 《电力电子技术》, vol. 51, no. 9, pages 24 - 27 * |
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Application publication date: 20180223 |
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