CN106385165A - SiC MOSFET driving circuit with crosstalk suppression capability - Google Patents
SiC MOSFET driving circuit with crosstalk suppression capability Download PDFInfo
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- CN106385165A CN106385165A CN201610981876.8A CN201610981876A CN106385165A CN 106385165 A CN106385165 A CN 106385165A CN 201610981876 A CN201610981876 A CN 201610981876A CN 106385165 A CN106385165 A CN 106385165A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention discloses a SiC MOSFET driving circuit with crosstalk suppression capability. The SiC MOSFET driving circuit comprises a switch tube S1 and a switch tube S2 which are in push-pull connection. A driving resistance is connected between the switch tube S1 and the switch tube S2. The output end of the driving resistor is connected with a first-stage crosstalk suppression circuit and a second-stage crosstalk suppression circuit which are connected in parallel. The first-stage crosstalk suppression circuit comprises a capacitor C1 and a diode D2 which are connected in parallel. The second-stage crosstalk suppression circuit comprises a BJT tube T, a resistor R3 which is connected between the base electrode of the BJT tube and an emitter electrode in a parallel manner, and capacitors C2 and C3 which are connected between the collector electrode of the BJT tube and the base electrode in the parallel manner. The resistor R3 and the capacitor C3 are output ends. The SiC MOSFET driving circuit prevents mis-conduction through switching on and switching off negative voltage and reduces a negative voltage peak through the crosstalk suppression circuits.
Description
Technical field
The present invention relates to power electronics drive circuit field is and in particular to a kind of SiC that can suppress brachium pontis crosstalk
MOSFET drive circuit.
Background technology
In recent years, silicon carbide device development is swift and violent, has operating temperature height, blocking voltage height, operating frequency height and on-state
Little advantage is lost, is widely used in the occasion of high pressure, high temperature, high efficiency and high power density.Wherein, SiC MOSFET with
Its high pressure and the high advantage of switching frequency and receive the extensive concern of educational circles and industrial quarters.Although SiC MOSFET has excellent
Good device property, but the design of its drive circuit is but very difficult.First, the parasitic capacitance of SiC MOSFET is smaller,
It is highly susceptible to the impact of stray inductance in circuit during real work, be likely in switching process produce serious vibration, therefore
Driving circuit area should be reduced to reduce stray inductance during wiring as far as possible.Secondly, the secure threshold of SiC MOSFET driving voltage
Very little, the ability that its grid source electrode tolerates negative pressure is especially poor, during a vibration negative pressure spike that produces be likely to puncture grid with
Oxide layer between source electrode was so as to lose efficacy.
Bridge arm circuit contains the complementary conducting switching device of two series connection, is the most commonly used circuit knot in power inverter
Structure.In the bridge arm circuit that SiC MOSFET is constituted, brachium pontis cross-interference issue during high-frequency work, can be aggravated.Brachium pontis crosstalk is divided into two kinds
Situation：First, when upper pipe is opened, the grid source two ends of down tube can produce a malleation spike, down tube may be made to mislead, lead to
Fault；Second, when upper pipe turns off, the grid source two ends of down tube can produce a negative pressure spike, may exceed secure threshold
Down tube is made to puncture.
Therefore, for the performance of SiC MOSFET is better achieved, in the urgent need to a kind of driving with clutter reduction ability
Circuit.
Content of the invention
For solving drawbacks described above present in prior art, it is an object of the invention to provide one kind has clutter reduction energy
The SiC MOSFET drive circuit of power, this drive circuit is turned off by negative pressure and avoids situation about misleading, and is pressed down by crosstalk
Circuit processed reduces negative pressure spike.
For achieving the above object, the present invention takes technical scheme below：
A kind of SiC MOSFET drive circuit with clutter reduction ability, SiC MOSFET drive circuit includes mutually pushing away
The switching tube S1 that pull connects and switching tube S2, is connected with driving resistance between switching tube S 1 and switching tube S2, drive resistance defeated
Go out end and be connected with the first order clutter reduction circuit being connected in parallel and second level clutter reduction circuit；Described first order clutter reduction
Circuit includes electric capacity C1 parallel with one another and diode D2；Described second level clutter reduction circuit includes BJT pipe T, is connected in parallel on BJT
Pipe T base stage and the resistance R3 on emitter stage, electric capacity C2 and C3 being associated between BJT pipe T colelctor electrode and base stage in parallel；Resistance R3 and
Electric capacity C3 is outfan.
Further, the resistance R2 that the described resistance R1 driving resistance to include and be serially connected and diode D1 is in parallel.
Further, in the switching tube S1 and switching tube S2 that described push-pull type connects, the grid of switching tube S1 and switching tube S2
It is connected with power supply, the source electrode of switching tube S1 connects the drain electrode of switching tube S2；The electric capacity C1 of first order clutter reduction circuit and diode
D2 is connected with the source electrode of switching tube S2 respectively, and electric capacity C1 is connected with electric capacity C2 and C3 on BJT pipe T；First order clutter reduction electricity
The diode D2 on road is connected with resistance R1, the emitter stage of resistance R2, BJT pipe T and resistance R3 respectively.
Further, described electric capacity C1 is parallel with voltage source V2.
Further, in nF level, C1 capacitance value is in μ F level for described C3 and C2 capacitance value.
Correspondingly, The present invention gives a kind of SiC MOSFET drive circuit build dipulse test circuit, including two
Individual SiC MOSFET drive circuit, two SiC MOSFET drive circuits respectively with brachium pontis Q_H and bridge circuit on bridge circuit
Lower brachium pontis Q_L is connected, and brachium pontis Q_H on described bridge circuit is parallel with inductance L, brachium pontis Q_H and bridge circuit on bridge circuit
Lower brachium pontis Q_L is jointly in parallel with power supply Vdc.
Further, on described bridge circuit, brachium pontis Q_H is identical with brachium pontis Q_L structure under bridge circuit, including with SiC
The switching tube Q that MOSFET drive circuit outfan is connected.
Further, the source electrode of brachium pontis Q_H switching tube Q and brachium pontis Q_L switching tube Q under bridge circuit on described bridge circuit
Drain electrode is connected, the source electrode of brachium pontis Q_L switching tube Q and power supply under the drain electrode of brachium pontis Q_H switching tube Q and bridge circuit on bridge circuit
Vdc connects.
Due to taking above technical scheme, it has advantages below to the present invention：
1. the present invention devises voltage source V2 on electric capacity C1 in SiC MOSFET drive circuit, is turned off using negative pressure, energy
Enough avoid what crosstalk caused to mislead, ensure circuit safety work；
2. adopt clutter reduction circuit, the negative pressure spike that crosstalk causes can be reduced, prevent switching device from damaging；
3. clutter reduction circuit is simple and cost is relatively low.
4. the capacitance of electric capacity C3 and electric capacity C3, in nF level, can make switching speed be unlikely to slow；Electric capacity C1 capacitance in μ F level,
Compensation electric current can be produced rapidly in negative pressure spike, thus reducing negative pressure spike.
5. using dipulse test circuit, the present invention is tested, negative pressure spike can reduce 10% about.
Brief description
Fig. 1 is the electrical block diagram of the present invention.
Fig. 2 is the half-bridge circuit schematic diagram of the present invention.
Fig. 3 is the sequential chart of drive signal.
Fig. 4 (a)-(c) is day part circuit work isoboles respectively.
Specific embodiment
The invention will be described in further detail with reference to the accompanying drawings and examples, but is not intended as invention is done any limit
The foundation of system.
Fig. 1 is the schematic diagram of the SiC MOSFET drive circuit with clutter reduction ability, SiC MOSFET drive circuit
The switching tube S1 and switching tube S2 connecting including mutual push-pull type, is connected with driving resistance between switching tube S1 and switching tube S2,
Resistance outfan is driven to be connected with the first order clutter reduction circuit being connected in parallel and second level clutter reduction circuit；First order string
Disturb suppression circuit and include electric capacity C1 parallel with one another and diode D2；Second level clutter reduction circuit includes BJT pipe T, is connected in parallel on
BJT pipe T base stage and the resistance R3 on emitter stage, electric capacity C2 and C3 being associated between BJT pipe T colelctor electrode and base stage in parallel；Resistance
R3 and electric capacity C3 is outfan.
Wherein, resistance is driven to include the resistance R2 being in parallel with the resistance R1 being serially connected and diode D1.
In the switching tube S1 that push-pull type connects and switching tube S2, switching tube S1 is connected with power supply with the grid of switching tube S2,
The source electrode of switching tube S1 connects the drain electrode of switching tube S2；The electric capacity C1 of first order clutter reduction circuit and diode D2 respectively with switch
The source electrode of pipe S2 connects, and electric capacity C1 is connected with electric capacity C2 and C3 on BJT pipe T；The diode D2 of first order clutter reduction circuit
It is connected with resistance R1, the emitter stage of resistance R2, BJT pipe T and resistance R3 respectively.Voltage source V2 is parallel with electric capacity C1.
Switching tube S1 is connected with S2 push-pull type, and R1, R2 and D1 together constitute driving resistance, when S1 conducting and S2 turn off,
D1 turns on, and open resistance is that R1 is in parallel with R2；S2 conducting and S1 turn off when, D1 turn off, close resistance break be R2.Diode D1 deposits
Open speed and turn-off speed allowing to adjust respectively.SiC MOSFET (switching tube S1 and switching tube S2) is fully on
When, its grid source electrode both end voltage is V1-V2；When SiC MOSFET complete switches off, its grid source electrode both end voltage is-V2.Above-mentioned each
Parameter needs to be determined according to practical situation, C3 capacitance very little, and C3 capacitance value can use 1nF, and C2 can use 4.7nF；C1 is compared with C3 capacitance
More than 1000 times, value can use 47 μ F to value.The value of C3 and C2 should determine according to practical application.
Fig. 2 is the schematic diagram that the present invention is applied to half-bridge circuit.The SiC MOSFET that two are connected in parallel with each other drives electricity
Road is connected with brachium pontis Q_L under brachium pontis Q_H on bridge circuit and bridge circuit respectively, and in composition, brachium pontis drive circuit and lower brachium pontis drive
Galvanic electricity road.
Upper brachium pontis drive circuit includes：Switching tube S1_H and switching tube S2_H recommends connection, and is serially connected in power supply V1_H two
End.Diode D1_H, resistance R1_H and the driving resistance of resistance R2_H composition, one end is connected to switching tube S1_H and switching tube
Between S2_H, the other end is connected with the upper switching tube Q1 grid of brachium pontis Q_H on bridge circuit.Electric capacity C1_H and diode D2_H structure
The first order clutter reduction circuit becoming and the second level crosstalk of BJT pipe T_H, resistance R3_H, electric capacity C2_H and electric capacity C3_H composition
Suppression circuit is connected in parallel on bridge circuit between the grid of upper switching tube Q1 of brachium pontis Q_H and source electrode.Electric capacity C1_H and negative pressure source
V2_H is connected in parallel.
Lower brachium pontis drive circuit includes：Switching tube S1_L and switching tube S2_L recommends connection, and is serially connected in power supply V1_L two
End.Diode D1_L, resistance R1_L and the driving resistance of resistance R2_L composition, one end connecting valve pipe S1_L and switching tube S2_L
Between, the other end is connected with the grid of the lower switching tube Q2 of brachium pontis Q_L under bridge circuit.Electric capacity C1_L and diode D2_L is constituted
First order clutter reduction circuit and the second level crosstalk suppression that constitutes of BJT pipe T_L, resistance R3_L, electric capacity C2_L and electric capacity C3_L
Circuit in parallel processed is under bridge circuit between the grid of lower switching tube Q2 of brachium pontis Q_L and source electrode.Electric capacity C1_L and negative pressure source V2_
L is connected in parallel.
On bridge circuit, brachium pontis Q_H is identical with brachium pontis Q_L structure under bridge circuit, including with SiC MOSFET drive circuit
The resistance Rin that outfan is connected, resistance Rin is parallel with electric capacity Cgd and electric capacity Cgs, resistance Rin, electric capacity Cgd and electric capacity Cgs
Node be commonly connected to the grid of switching tube Q (upper switching tube Q1 and lower switching tube Q2), the source electrode of switching tube Q and drain electrode are in parallel
There is electric capacity Cds and diode D.On half-bridge circuit, the source electrode of brachium pontis Q_H switching tube Q and drain electrode are parallel with inductance L, on half-bridge circuit
Under the drain electrode of brachium pontis Q_H switching tube Q and half-bridge circuit, the source electrode of brachium pontis Q_L switching tube Q is connected in parallel with power supply Vdc.
Sequential chart with reference to the drive signal of Fig. 3 carries out labor to the principle of drive circuit, and upper pipe is located always
In off state, the on off operating mode of down tube changes with period difference.
The t0-t1 period：As shown in Fig. 4 (a), S1_H turns off and S2_H conducting, and negative pressure source V2_H charges to Cgs_H, C3_H,
Electric current flows through positive voltage under bearing in R3_H generation, the emitter junction positively biased of BJT pipe T_H, and collector junction is reverse-biased, is operated in amplification shape
State, negative pressure source V2_H starts C2_H is charged.After charging terminates, the voltage on Cgs_H, C3_H, C2_H is-V2.
For down tube, S1_L turns off and S2_L conducting, and negative pressure source V2_L charges to Cgs_L, C3_L, and electric current flows through
Positive voltage, the emitter junction positively biased of BJT pipe T_L under bearing in R3_L generation, collector junction is reverse-biased, is operated in magnifying state, negative pressure source
V2_L starts C2_L is charged.After charging terminates, the voltage on Cgs_L, C3_L, C2_L is-V2.
The t1-t2 period：As shown in Fig. 4 (b), S1_L opens and S2_L turns off, and down tube Q_L begins to turn on, down tube Q_L grid source
Electric capacity Cgs_L and Rin_L branch road are due to charge constant very little, so Cgs_L voltage can rapidly rise to V1-V2；R3_L
Larger with C3_L branch road charge constant, the upper voltage of C3_L slowly rises, and now the emitter junction of BJT pipe T_L is reverse-biased, collector junction
Positively biased, is operated in inversion state, and C2_L carries out extremely slow charging process.Due to the charging current very little of C2_L and C3_L,
Hardly speed is opened in impact.When the voltage at C3_L two ends reaches V1-V2, T_L is operated in cut-off state, now on C2_L
Voltage reach Va (Va<V1-V2).
Open-minded due to down tube Q_L, the miller capacitance Cgd_H of upper pipe Q_H charges and Cgs_H voltage is raised, and may make
Mislead.Turn off due to employing negative pressure, now on Cgs_H, crosstalk malleation spike is not too large, and then avoids and mislead.
The t2-t3 period：Upper pipe Q_H grid source both end voltage returns to-V2, enters and stablizes off state；Down tube Q_L grid source two
Terminal voltage reaches V1-V2, enters and stablizes conducting state.
The t3-t4 period：As shown in Fig. 4 (c), S1_L turns off and S2_L conducting, and down tube Q_L begins to turn off.Cgs_L、C3_L
Electric discharge, electric current flows through positive voltage under bearing in R3_L generation, the emitter junction positively biased of BJT pipe T_L, and collector junction is reverse-biased, is operated in and puts
Big state, C2_L starts to discharge.C2_L is incorporated to so that turn-off speed is slack-off, is conducive to reducing the negative pressure spike of upper pipe Q_H.Put
After electricity terminates, the voltage on Cgs_L, C3_L, C2_L is-V2.
Due to the shutoff of down tube Q_L, the miller capacitance Cgd_H electric discharge of upper pipe Q_H makes Cgs_H produce negative pressure spike.R3_
H flows through just upper negative voltage under electric current produces, and makes the emitter junction positively biased of T_H, collector junction reverse-biased, is operated in magnifying state, C2_H
Access in circuit, equiva lent impedance diminishes, and can effectively reduce negative pressure spike.
The t4-t5 period：Upper pipe Q_H grid source both end voltage returns to-V2, enters and stablizes off state；Down tube Q_L grid source two
Terminal voltage reaches-V2, enters and stablizes off state.
Although the above-mentioned accompanying drawing that combines is described to the specific implementation method of the present invention, protection scope of the present invention is not
It is limited to this, the various modifications that one of ordinary skill in the art make under the premise without departing from the principles of the invention and deformation are still at this
Within bright protection domain.
Claims (8)
1. a kind of SiC MOSFET drive circuit with clutter reduction ability is it is characterised in that SiC MOSFET drive circuit
The switching tube S1 and switching tube S2 connecting including mutual push-pull type, is connected with driving resistance between switching tube S1 and switching tube S2,
Resistance outfan is driven to be connected with the first order clutter reduction circuit being connected in parallel and second level clutter reduction circuit；Described first
Level clutter reduction circuit includes electric capacity C1 parallel with one another and diode D2；Described second level clutter reduction circuit includes BJT pipe
T, the resistance R3 being connected in parallel on BJT pipe T base stage and emitter stage, the electric capacity C2 being connected in parallel between BJT pipe T colelctor electrode and base stage and
C3；Resistance R3 and electric capacity C3 is outfan.
2. a kind of SiC MOSFET drive circuit with clutter reduction ability according to claim 1 it is characterised in that
The resistance R2 that the described resistance R1 driving resistance to include and be serially connected and diode D1 is in parallel.
3. a kind of SiC MOSFET drive circuit with clutter reduction ability according to claim 1 it is characterised in that
In the switching tube S1 that described push-pull type connects and switching tube S2, switching tube S1 is connected with power supply with the grid of switching tube S2, switch
The source electrode of pipe S1 connects the drain electrode of switching tube S2；The electric capacity C1 of first order clutter reduction circuit and diode D2 respectively with switching tube S2
Source electrode connect, electric capacity C1 is connected with electric capacity C2 and C3 on BJT pipe T；The diode D2 of first order clutter reduction circuit is respectively
It is connected with resistance R1, the emitter stage of resistance R2, BJT pipe T and resistance R3.
4. a kind of SiC MOSFET drive circuit with clutter reduction ability according to claim 3 it is characterised in that
It is parallel with voltage source V2 on described electric capacity C1.
5. a kind of SiC MOSFET drive circuit with clutter reduction ability according to claim 4 it is characterised in that
, in nF level, C1 capacitance value is in μ F level for described C3 and C2 capacitance value.
6. the dipulse test circuit of the SiC MOSFET drive circuit described in a kind of any one of claim 1-5, its feature exists
In, including two SiC MOSFET drive circuits, two SiC MOSFET drive circuits respectively with brachium pontis Q_H on bridge circuit and
Under bridge circuit brachium pontis Q_L be connected, brachium pontis Q_H on described bridge circuit is parallel with inductance L, on bridge circuit brachium pontis Q_H and
Under bridge circuit, brachium pontis Q_L is jointly in parallel with power supply Vdc.
7. SiC MOSFET drive circuit according to claim 6 builds dipulse test circuit is it is characterised in that institute
State that on half-bridge circuit, brachium pontis Q_H is identical with brachium pontis Q_L structure under half-bridge circuit, be equipped with and the output of SiC MOSFET drive circuit
The switching tube Q that end is connected.
8. the dipulse test circuit of SiC MOSFET drive circuit according to claim 7 is it is characterised in that described bridge
On formula circuit, the source electrode of brachium pontis Q_H switching tube Q is connected with the drain electrode of brachium pontis Q_L switching tube Q under bridge circuit, bridge on bridge circuit
Under the drain electrode of arm Q_H switching tube Q and bridge circuit, the source electrode of brachium pontis Q_L switching tube Q is connected with power supply Vdc.
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| CN201610981876.8A CN106385165B (en) | 2016-11-08 | 2016-11-08 | A kind of SiC MOSFET driving circuit with clutter reduction ability |
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| CN201610981876.8A CN106385165B (en) | 2016-11-08 | 2016-11-08 | A kind of SiC MOSFET driving circuit with clutter reduction ability |
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Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107623512A (en) * | 2017-08-29 | 2018-01-23 | 中国科学院电工研究所 | A kind of active Miller clamp protection circuit |
| CN107733220A (en) * | 2017-11-20 | 2018-02-23 | 武汉华海通用电气有限公司 | The drive circuit that a kind of anti-half-bridge or full-bridge switching power supply circuit mislead |
| CN108988617A (en) * | 2018-08-22 | 2018-12-11 | 哈尔滨工业大学 | A kind of driving circuit and circuits improvement method of active suppression SiC MOSFET crosstalk phenomenon |
| CN109412564A (en) * | 2018-12-14 | 2019-03-01 | 珠海格力电器股份有限公司 | Drive circuit, power electronic apparatus, and energy apparatus |
| CN109672336A (en) * | 2019-01-14 | 2019-04-23 | 南京工程学院 | A kind of SiC MOSFET gate pole auxiliary circuit |
| CN109921620A (en) * | 2019-03-13 | 2019-06-21 | 安徽大学 | A kind of clutter reduction driving circuit and control method |
| CN110212740A (en) * | 2019-05-15 | 2019-09-06 | 中国矿业大学 | A kind of driving circuit inhibiting the crosstalk of SiC MOSFET gate pole and oscillation |
| CN110224696A (en) * | 2019-07-11 | 2019-09-10 | 珠海格力电器股份有限公司 | drive protection circuit |
| CN111162765A (en) * | 2020-01-20 | 2020-05-15 | 山东建筑大学 | Experimental MOSFET (Metal-oxide-semiconductor field Effect transistor) and BJT (Bipolar junction transistor) cascade voltage amplification circuit |
| CN111525780A (en) * | 2020-03-16 | 2020-08-11 | 浙江大学 | Circuit, method and device for restraining driving crosstalk voltage of wide-bandgap power device in high-impedance off state |
| CN111614236A (en) * | 2020-06-15 | 2020-09-01 | 南京工程学院 | SiC MOSFET gate auxiliary circuit based on bridge circuit |
| CN113054829A (en) * | 2019-12-26 | 2021-06-29 | 湖南国芯半导体科技有限公司 | Silicon carbide MOSFET drive circuit |
| CN113131727A (en) * | 2021-04-19 | 2021-07-16 | 珠海拓芯科技有限公司 | Drive circuit, booster circuit and air conditioner |
| CN113872420A (en) * | 2021-09-23 | 2021-12-31 | 上海电机学院 | Improved gate drive circuit for inhibiting bridge arm crosstalk of SiC-MOSFET (silicon carbide-metal oxide semiconductor field effect transistor) |
| CN113937989A (en) * | 2021-11-16 | 2022-01-14 | 西安电子科技大学 | Drive circuit and method for inhibiting crosstalk and drain current overshoot of SiC MOSFET (Metal oxide semiconductor field Effect transistor) |
| CN114024534A (en) * | 2022-01-10 | 2022-02-08 | 南通大学 | High-off impedance driving circuit for inhibiting crosstalk of SiC MOSFET (Metal oxide semiconductor field Effect transistor) |
| CN114024460A (en) * | 2020-07-15 | 2022-02-08 | 威马智慧出行科技（上海）有限公司 | Inverter and method for inhibiting bridge arm crosstalk |
| CN115441703A (en) * | 2022-08-26 | 2022-12-06 | 派恩杰半导体（杭州）有限公司 | Drive circuit for inhibiting bridge arm crosstalk of SiC MOSFET |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104506028A (en) * | 2015-01-13 | 2015-04-08 | 山东大学 | SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor) half-bridge circuit driver and half-bridge circuit drive method |
| CN104883038A (en) * | 2015-06-15 | 2015-09-02 | 山东大学 | Half-bridge circuit employing negative voltage to turn off half-bridge circuit driver, and method |
| CN105871230A (en) * | 2016-05-17 | 2016-08-17 | 南京航空航天大学 | Drive circuit of SiC MOSFET |
-
2016
- 2016-11-08 CN CN201610981876.8A patent/CN106385165B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104506028A (en) * | 2015-01-13 | 2015-04-08 | 山东大学 | SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor) half-bridge circuit driver and half-bridge circuit drive method |
| CN104883038A (en) * | 2015-06-15 | 2015-09-02 | 山东大学 | Half-bridge circuit employing negative voltage to turn off half-bridge circuit driver, and method |
| CN105871230A (en) * | 2016-05-17 | 2016-08-17 | 南京航空航天大学 | Drive circuit of SiC MOSFET |
Non-Patent Citations (1)
| Title |
|---|
| 钟志远，等: "碳化硅MOSFET桥臂电路串扰抑制方法", 《电工电能新技术》 * |
Cited By (27)
| Publication number | Priority date | Publication date | Assignee | Title |
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