CN109921620A - A kind of clutter reduction driving circuit and control method - Google Patents
A kind of clutter reduction driving circuit and control method Download PDFInfo
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- CN109921620A CN109921620A CN201910186937.5A CN201910186937A CN109921620A CN 109921620 A CN109921620 A CN 109921620A CN 201910186937 A CN201910186937 A CN 201910186937A CN 109921620 A CN109921620 A CN 109921620A
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- bridge arm
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- clutter reduction
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- 239000003990 capacitor Substances 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 230000003321 amplification Effects 0.000 claims abstract description 3
- 238000002955 isolation Methods 0.000 claims abstract description 3
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 3
- 238000012421 spiking Methods 0.000 claims abstract description 3
- 239000000203 mixture Substances 0.000 claims description 9
- 230000005611 electricity Effects 0.000 claims description 8
- 230000001629 suppression Effects 0.000 claims description 5
- 230000000295 complement effect Effects 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention discloses a kind of clutter reduction driving circuit and control methods, it can be used for the upper and lower bridge arm high-speed driving of the wide band gap semiconductor devices such as SiC, the driving circuit being made of resistance, triode etc. and the clutter reduction circuit two parts being made of triode, resistance and capacitor etc. form；The pwm control signal and clutter reduction of the input control end connection light-coupled isolation output of driving circuit control signal, and output end connects the control grid of broad stopband device, and is powered by dedicated driving power；The driving circuit connects pipe " push-pull type " using two triodes, increases driving capability, by drive control broad stopband device after the control pwm signal amplification of optocoupler output；Clutter reduction circuit is made of independent triode connection capacitor, resistance and the resistance-capacitance circuit of parallel connection, is inhibited crosstalk signal and is limited the interference of spiking, it is ensured that device reliably closes section and do not interfered by crosstalk signal.With cost advantage, and it is easily achieved；Reliable drive control only can be thus achieved with control signal all the way.
Description
Technical field
The present invention relates to a kind of driving circuit and control methods, particularly relate to a kind of applied to wide bandgap semiconductor
The high speed clutter reduction driving circuit and control method of device.
Background technique
Tradition is difficult to greatly improve based on the transducer performance of Si device, can be big using wide band gap semiconductor device is based on
The various performances of width Lifting Transform device become following application new trend.It is traditional based on Si device since switching frequency is low, it is right
Driving circuit requires relatively relatively low, driving circuit technology maturation.Based on wide band gap semiconductor device of new generation due to switch frequency
The high factor of rate, it is more demanding to driving circuit.Especially as upper and lower bridge arm combined running in application, due to quickly opening
The limitation such as pressure-resistant performance of grid of pass and device itself, be easy to cause the false triggering or punch through damage of device, reasonably sets
Count the key for being suitble to high-speed driving to become wide band gap semiconductor device application.
Summary of the invention
It is an object of the invention to make up the deficiencies in the prior art, a kind of clutter reduction driving circuit and controlling party are provided
Method, characteristic of the circuit based on wide bandgap semiconductor SiC device, drive when bridge arm circuit effectively being inhibited to work by circuit design
Dynamic over-voltage error is connected and protects device not breakdown, including the reliable influence to work and inhibit crosstalk phenomenon of device high speed.
The technical solution adopted by the present invention are as follows: a kind of clutter reduction driving circuit can be used for the wide bandgap semiconductors such as SiC
The upper and lower bridge arm high-speed driving of device.Driving circuit that the driving circuit is made of resistance, triode etc. and by triode,
Clutter reduction circuit two parts of the compositions such as resistance and capacitor form.The input control end connection light-coupled isolation output of driving circuit
Pwm control signal and clutter reduction control signal, output end connects the control grid of broad stopband device, and by dedicated driving
Power supply power supply.
The driving circuit connects pipe " push-pull type " using two triodes, increases driving capability, optocoupler is exported
Control pwm signal amplification after drive control broad stopband device.The clutter reduction circuit connects electricity by independent triode
Hold, the resistance-capacitance circuit composition of resistance and parallel connection, inhibits crosstalk signal and limit the interference of spiking, it is ensured that device reliably closes
Section and do not interfered by crosstalk signal.
The driving and cross talk circuit is divided into bridge arm and lower bridge arm circuit two parts composition, two parts complementation each other
Operation control manner.
Direct current+the 18V and -3.3V power supply that the control power supply export by isolated form, respectively as open with
The control power supply of shutdown.
Two triodes of the preferred driving circuit are respectively 2SC3736 and 2SC4541, three poles of suppression circuit
Pipe is that 2SC3736 is formed.
A kind of control method of clutter reduction driving circuit provided by the invention, specifically: the upper bridge arm before the t0 moment
Shutdown, upper bridge arm clutter reduction circuit ON operation, the driving conducting of lower bridge arm and lower bridge arm clutter reduction electricity is driven to close section not
Work；T0 moment, the shutdown of lower bridge arm driving signal；T1 moment, the conducting of lower bridge arm crosstalk signal；T2 moment, upper bridge arm crosstalk suppression
System control signal-off；T3 moment, upper bridge arm driving signal conducting, upper bridge arm switch device conductive；T4 moment, upper bridge arm driving
Signal shutdown, upper bridge arm device shutdown；T5 moment, upper bridge arm clutter reduction signal conduction；T6 moment, lower bridge arm clutter reduction letter
Number shutdown；T7 moment, the conducting of lower bridge arm driving signal, lower bridge arm switching device are open-minded.
It is controlled by the driving signal on-off control of timing different time points and the on-off of clutter reduction signal, is guaranteeing to open
Phenomena such as device is closed while be securely and reliably connected, cross talk effects is effectively inhibited and avoids the breakdown of switching device generation, really
Protect the safe and reliable work of broad stopband device.
The advantages of the present invention over the prior art are that:
(1) present invention driver circuit core devices are constituted using triode stage circuit, more existing special chip driving
Circuit or other MOS device driving circuits, have cost advantage, and be easily achieved；
(2) driving control signal of the present invention is easily achieved, and can satisfy various application occasions, can in middle low frequency driving
Reliable drive control only can be thus achieved with control signal all the way；
(3) the of the invention driving circuit can be made the drive circuit module of volume very little in practical application, be easy to
It is realized by driving element ontology integrated.
Detailed description of the invention
Fig. 1 is application circuit schematic diagram of the invention；
Fig. 2 is control method control signal timing diagram of the invention.
Specific embodiment
A specific embodiment of the invention is further described with reference to the accompanying drawing.
As shown in Figure 1, a kind of clutter reduction driving circuit of the invention, circuit includes upper bridge arm circuit 11 and lower bridge arm electricity
Road 12.The inhibition driving includes that driving circuit and suppression circuit two parts form, wherein the driving electricity of upper bridge arm circuit 11
Routing resistance R1_H, triode V10_H/V11_H, resistance R3_H/R4_H/R7_H composition, the resistance R1_H and driving are controlled
Signal end processed is connected with the control terminal of triode V10_H/V11_H, the grid of the resistance R3_H/R4_H and switching device
It is connected, which can export switching device via the push-pull circuit that triode forms for the control signal of input
Control driving signal.
The clutter reduction electricity routing resistance R2_H/R4_H/R5_H/R6_H of the upper bridge arm circuit 11, diode D1_H,
Capacitor C1_H/C2_H and triode V11_H/V12_H is formed, wherein resistance R2_H/R4_H, diode D1_H, triode V11_
H, resistance R4_H, triode V12_H, resistance R6_H, resistance R5_H, capacitor C1_H separately constitute in parallel clutter reduction circuit and
Circuit is eliminated in spike breakdown, and common end in parallel is connected by resistance R8_H with the bridge arm midpoint of switching device, is inhibited due under
The on-off bring crosstalk interference and spike of bridge arm switching device influence.The control terminal of the triode V12_H passes through resistance
R6_H is connected with control signal.
The driving circuit of the lower bridge arm circuit 12 is by resistance R1_L, triode V10_L/V11_L, resistance R3_L/R4_
L/R7_L composition, the resistance R1_L are connected with the control terminal at driving control signal end and triode V10_L/V11_L, institute
The resistance R3_L/R4_L stated is connected with the grid of switching device, which can be by the control signal of input via three
The control driving signal of the push-pull circuit output switching device of pole pipe composition.
The clutter reduction electricity routing resistance R2_L/R4_L/R5_L/R6_L of the lower bridge arm circuit 12, diode D1_L,
Capacitor C1_L/C2_L and triode V11_L/V12_L is formed, wherein resistance R2_L/R4_L, diode D1_L, triode V11_
L, resistance R4_L, triode V12_L, resistance R6_L, resistance R5_L, capacitor C1_L separately constitute in parallel clutter reduction circuit and
Circuit is eliminated in spike breakdown, and common end in parallel is connected by resistance R8_L with switching device with the cathode endpoint of DC bus,
Inhibiting on-off bring crosstalk interference and spike due to lower bridge arm switching device influences.The control of the triode V12_L
End is connected by resistance R6_L with control signal.
The driving circuit is powered by dedicated driving power, what the preferred control power supply was exported by isolated form
Direct current+18V and -3.3V power supply, respectively as the control power supply turned on and off.
Two triodes of the preferred driving circuit are respectively 2SC3736 and 2SC4541, three poles of suppression circuit
Pipe is that 2SC3736 is formed.
If Fig. 2 is that control method of the invention controls signal timing diagram, a kind of clutter reduction driving circuit control of the invention
Method processed, specifically: the driving shutdown of upper bridge arm, upper bridge arm clutter reduction circuit ON operation, lower bridge arm before the t0 moment
Driving conducting and lower bridge arm clutter reduction electricity close section and do not work；T0 moment, the shutdown of lower bridge arm driving signal；T1 moment, lower bridge arm
Crosstalk signal conducting；T2 moment, upper bridge arm clutter reduction control signal-off；T3 moment, upper bridge arm driving signal conducting, upper bridge
Arm switch break-over of device；T4 moment, upper bridge arm driving signal shutdown, upper bridge arm device shutdown；T5 moment, upper bridge arm clutter reduction
Signal conduction；T6 moment, the shutdown of lower bridge arm clutter reduction signal；T7 moment, the conducting of lower bridge arm driving signal, lower bridge arm derailing switch
Part is open-minded.
The above content is combine specific optimal technical scheme further detailed description of the invention, and it cannot be said that
Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist
Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to of the invention
Protection scope.
Claims (5)
1. a kind of clutter reduction driving circuit can be used for the upper and lower bridge arm high-speed driving of the wide band gap semiconductor devices such as SiC,
Be characterized in that: driving circuit that the clutter reduction driving circuit is made of resistance, triode etc. and by triode, resistance and
Clutter reduction circuit two parts of the compositions such as capacitor form；
The pwm control signal and clutter reduction control letter of the input control end connection light-coupled isolation output of the driving circuit
Number, output end connects the control grid of broad stopband device, and is powered by dedicated driving power；The driving circuit uses two
A triode connects pipe " push-pull type ", increases driving capability, and drive control after the control pwm signal amplification of optocoupler output is wide
Forbidden band device；
The clutter reduction circuit is made of independent triode connection capacitor, resistance and the resistance-capacitance circuit of parallel connection, inhibits string
It disturbs signal and limits the interference of spiking, it is ensured that device reliably closes section and do not interfered by crosstalk signal.
2. a kind of clutter reduction driving circuit according to claim 1, it is characterised in that: the driving circuit is divided into
Bridge arm and lower bridge arm circuit two parts composition, two parts operation control manner complementary each other.
3. a kind of clutter reduction driving circuit according to claim 1, it is characterised in that: the control power supply is by being isolated
Direct current+the 18V and -3.3V power supply of type output, respectively as the control power supply turned on and off.
4. a kind of clutter reduction driving circuit according to claim 1, it is characterised in that: two of the driving circuit
Triode is respectively 2SC3736 and 2SC4541, and the triode of suppression circuit is 2SC3736 composition.
5. a kind of control method of clutter reduction driving circuit, it is characterised in that: before the t0 moment driving shutdown of upper bridge arm, on
Bridge arm clutter reduction circuit ON operation, the driving conducting of lower bridge arm and lower bridge arm clutter reduction electricity close section and do not work；The t0 moment,
The shutdown of lower bridge arm driving signal；T1 moment, the conducting of lower bridge arm crosstalk signal；T2 moment, upper bridge arm clutter reduction control signal close
It closes；T3 moment, upper bridge arm driving signal conducting, upper bridge arm switch device conductive；The t4 moment, upper bridge arm driving signal shutdown, on
The shutdown of bridge arm device；T5 moment, upper bridge arm clutter reduction signal conduction；T6 moment, the shutdown of lower bridge arm clutter reduction signal；When t7
It carves, the conducting of lower bridge arm driving signal, lower bridge arm switching device is open-minded.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910186937.5A CN109921620B (en) | 2019-03-13 | 2019-03-13 | Crosstalk suppression driving circuit and control method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910186937.5A CN109921620B (en) | 2019-03-13 | 2019-03-13 | Crosstalk suppression driving circuit and control method |
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| Publication Number | Publication Date |
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| CN109921620A true CN109921620A (en) | 2019-06-21 |
| CN109921620B CN109921620B (en) | 2021-07-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201910186937.5A Active CN109921620B (en) | 2019-03-13 | 2019-03-13 | Crosstalk suppression driving circuit and control method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110233566A (en) * | 2019-07-05 | 2019-09-13 | 广东美的制冷设备有限公司 | Drive control circuit and household appliance |
| CN112737312A (en) * | 2020-12-28 | 2021-04-30 | 山东大学 | Drive circuit for inhibiting crosstalk of SiC MOSFET bridge circuit |
| CN113872420A (en) * | 2021-09-23 | 2021-12-31 | 上海电机学院 | Improved gate drive circuit for inhibiting bridge arm crosstalk of SiC-MOSFET (silicon carbide-metal oxide semiconductor field effect transistor) |
| CN114146310A (en) * | 2021-12-08 | 2022-03-08 | 中科创辰(厦门)智慧科技有限公司 | Matrix type electric pulse time sequence isolation output circuit |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104506028A (en) * | 2015-01-13 | 2015-04-08 | 山东大学 | SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor) half-bridge circuit driver and half-bridge circuit drive method |
| CN106385165A (en) * | 2016-11-08 | 2017-02-08 | 西安交通大学 | SiC MOSFET driving circuit with crosstalk suppression capability |
| CN107342756A (en) * | 2017-08-16 | 2017-11-10 | 重庆大学 | A kind of improvement gate-drive device of suppression SiC MOSFET bridge arm crosstalks |
| CN108233684A (en) * | 2018-01-22 | 2018-06-29 | 深圳青铜剑科技股份有限公司 | The grid clutter reduction circuit and driving circuit of a kind of SiC MOSFET |
| CN108988617A (en) * | 2018-08-22 | 2018-12-11 | 哈尔滨工业大学 | A kind of driving circuit and circuits improvement method of active suppression SiC MOSFET crosstalk phenomenon |
-
2019
- 2019-03-13 CN CN201910186937.5A patent/CN109921620B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104506028A (en) * | 2015-01-13 | 2015-04-08 | 山东大学 | SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor) half-bridge circuit driver and half-bridge circuit drive method |
| CN106385165A (en) * | 2016-11-08 | 2017-02-08 | 西安交通大学 | SiC MOSFET driving circuit with crosstalk suppression capability |
| CN107342756A (en) * | 2017-08-16 | 2017-11-10 | 重庆大学 | A kind of improvement gate-drive device of suppression SiC MOSFET bridge arm crosstalks |
| CN108233684A (en) * | 2018-01-22 | 2018-06-29 | 深圳青铜剑科技股份有限公司 | The grid clutter reduction circuit and driving circuit of a kind of SiC MOSFET |
| CN108988617A (en) * | 2018-08-22 | 2018-12-11 | 哈尔滨工业大学 | A kind of driving circuit and circuits improvement method of active suppression SiC MOSFET crosstalk phenomenon |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110233566A (en) * | 2019-07-05 | 2019-09-13 | 广东美的制冷设备有限公司 | Drive control circuit and household appliance |
| CN112737312A (en) * | 2020-12-28 | 2021-04-30 | 山东大学 | Drive circuit for inhibiting crosstalk of SiC MOSFET bridge circuit |
| CN113872420A (en) * | 2021-09-23 | 2021-12-31 | 上海电机学院 | Improved gate drive circuit for inhibiting bridge arm crosstalk of SiC-MOSFET (silicon carbide-metal oxide semiconductor field effect transistor) |
| CN113872420B (en) * | 2021-09-23 | 2024-05-31 | 上海电机学院 | Improved gate electrode driving circuit for inhibiting SiC-MOSFET bridge arm crosstalk |
| CN114146310A (en) * | 2021-12-08 | 2022-03-08 | 中科创辰(厦门)智慧科技有限公司 | Matrix type electric pulse time sequence isolation output circuit |
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| CN109921620B (en) | 2021-07-02 |
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