CN104506028A - SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor) half-bridge circuit driver and half-bridge circuit drive method - Google Patents
SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor) half-bridge circuit driver and half-bridge circuit drive method Download PDFInfo
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- CN104506028A CN104506028A CN201510016603.5A CN201510016603A CN104506028A CN 104506028 A CN104506028 A CN 104506028A CN 201510016603 A CN201510016603 A CN 201510016603A CN 104506028 A CN104506028 A CN 104506028A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention discloses an SiC MOSFET half-bridge circuit driver and a half-bridge circuit drive method. The SiC MOSFET half-bridge circuit driver comprises a negative voltage generating circuit and a crosstalk removing circuit which are connected in series. The crosstalk removing circuit comprises an MOSFET switch tube and an RC parallel circuit II connected with the MOSFET switch tube in series. The RC parallel circuit II comprises a resistor R2 and a capacitor C2 which are connected in parallel. The SiC MOSFET half-bridge circuit driver and the half-bridge circuit drive method have the advantages of reducing the use of negative voltage power supply and saving the cost by generating negative voltage through a passive component for the drive circuit and effectively solving the problem of negative voltage peak of drive signals due to half-bridge unit crosstalk and accordingly reducing the risk of damage to an SiC device due to the fact that the negative voltage of a gate source electrode exceeds a limit value.
Description
Technical field
The present invention relates to a kind of a kind of SiC MOSFET half-bridge circuit driver and the half-bridge circuit driving method with negative pressure shutoff.
Background technology
SiC material, as a kind of wide bandgap semiconductor materials, has that broadband, forbidden band is large, puncture voltage is high, the high good physicochemical properties of thermal conductivity.In recent years, increasingly mature along with SiC material, SiC device had caused in the application of field of power electronics and had paid close attention to widely.Wherein, SiC MOSFET receives the favor of researcher with its high withstand voltage and high switching frequency.Due to the characteristic that SiC MOSFET is intrinsic, therefore the design of its drive circuit is different compared with Si material MOSFET.On the one hand, in order to improve the switching frequency of device, reduce the turn-off time, the design of driving needs to consider negative pressure, and on the other hand, the negative pressure that the grid source electrode of SiC MOSFET can bear is less, and therefore negative voltage can not exceed its peak suction value.In addition, because the two-level inverter of routine is all based on half-bridge circuit unit, therefore influence each other the i.e. crosstalk of half-bridge circuit two switching tube parasitic parameters under high dv/dt condition also can not be ignored.
At present, the design of major part driver is all add negative supply on the basis of original Si mosfet driver, thus increase design cost, and do not consider the impact of half-bridge circuit crosstalk on drive singal, cause the maximum magnitude that grid source electrode negative pressure spike can bear beyond SiC MOSFET.
Summary of the invention
Object of the present invention is exactly to solve the problem, and propose a kind of SiC MOSFET half-bridge circuit driver and the half-bridge circuit driving method with negative pressure shutoff, this structure produces negative pressure by the use of passive device, reduces cost; Meanwhile, under the prerequisite not affecting main circuit switch pipe switching speed, eliminate the negative voltage spike that half-bridge circuit crosstalk brings drive singal.
To achieve these goals, the present invention adopts following technical scheme:
A kind of SiC MOSFET half-bridge circuit driver, comprising: negative voltage generating circuit and elimination cross talk circuit; Described negative voltage generating circuit and elimination cross talk circuit are connected in series, the RC parallel circuits two that described elimination cross talk circuit comprises switch mosfet pipe and is connected in series with described switch mosfet pipe, described RC parallel circuits two comprises the resistance R2 and electric capacity C2 that are connected in parallel.
Described negative voltage generating circuit comprises: power supply, triode Su, triode Sd and RC parallel circuits one; Described triode Su and triode Sd recommends connection, and is serially connected in the two ends of described power supply, and one end of RC parallel circuits one is connected between triode Su and triode Sd, the other end is connected with elimination cross talk circuit; Described RC parallel circuits one comprises the resistance R1 and electric capacity C1 that are connected in parallel.
During described triode Su conducting, triode Sd ends; When triode Su ends, triode Sd conducting.
Apply a SiC MOSFET half-bridge circuit for described driver, comprising: brachium pontis under brachium pontis, lower brachium pontis driver and connected SiC MOSFET half-bridge circuit on upper brachium pontis driver and connected SiC MOSFET half-bridge circuit; On SiC MOSFET half-bridge circuit, brachium pontis and lower brachium pontis are connected in series;
Described upper brachium pontis driver comprises: triode SHu and triode SHd recommends connection, and be serially connected in the two ends of power supply VH, parallel circuits one end that resistance R1_H and electric capacity C1_H forms is connected between triode SHu and triode SHd, the other end is divided into two-way, wherein a road connects brachium pontis on SiC MOSFET half-bridge circuit, connects the shunt circuit that switch mosfet pipe and resistance R2_H and electric capacity C2_H form successively in another road;
Described lower brachium pontis driver comprises: triode SLu and triode SLd recommends connection, and be serially connected in the two ends of power supply VL, parallel circuits one end that resistance R1_L and electric capacity C1_L forms is connected between triode SLu and triode SLd, the other end is divided into two-way, wherein a road connects brachium pontis under SiC MOSFET half-bridge circuit, connects the shunt circuit that switch mosfet pipe and resistance R2_L and electric capacity C2_L form successively in another road.
A driving method for SiC MOSFET half-bridge circuit, comprising:
In t0 ~ t1 period, switching tube SHu and switching tube SLu conducting, switching tube SHd, switching tube SHa, switching tube SLd, switching tube SLa turn off, electric capacity C1_H, C2_H, C1_L, C2_L carry out precharge, C1_H, C1_L are in order to provide negative pressure, and its voltage is by regulating the setting of R1_H, R2_H, R1_L, R2_L value;
In t1 ~ t2 period, switching tube SHu, SLu turn off, switching tube SHd, SLd conducting, and electric capacity C1_H, C1_L provide negative pressure for the upper and lower brachium pontis of SiC MOSFET half-bridge circuit;
The t2 moment, switching tube SHu conducting, SHd turns off, and make brachium pontis on SiC MOSFET half-bridge circuit start conducting, switching tube SHa and SLa is in off state all the time, because the parasitic capacitance of switching tube SHa is less, can not affect the conducting speed of brachium pontis switching tube;
In t3 ~ t4 period, switching tube SHu conducting, SHd turns off, and upper brachium pontis conducting, lower brachium pontis turn off, and electric capacity C1_L continues as lower pipe and provides negative pressure;
In t4 ~ t5 period, switching tube SHd, SLd, SLa conducting, rest switch pipe turns off, and upper brachium pontis starts to turn off, and in the t5 moment, upper brachium pontis turns off completely, and switching tube SLa turns off;
In t5 ~ t6 period, switching tube SHd, SLd conducting, rest switch pipe turns off, and upper brachium pontis and lower brachium pontis are all in off state, wait for the arrival of next switch periods.
The invention has the beneficial effects as follows:
Drive circuit of the present invention produces negative pressure by passive device, decreases the use of negative supply, has saved cost; Meanwhile, effectively solve the negative pressure spike that half-bridge cells crosstalk causes drive singal, reduce because grid source electrode negative pressure exceedes the risk that limit value causes SiC device to damage.
Accompanying drawing explanation
Fig. 1 is electrical block diagram of the present invention;
Fig. 2 is Function detection circuit of the present invention;
Fig. 3 is drive singal logic diagram of the present invention;
Fig. 4 (a)-(f) is respectively day part circuit working isoboles.
Embodiment:
Below in conjunction with accompanying drawing and embodiment, the present invention will be further described:
The topological structure of SiC MOSFET half-bridge circuit driver of the present invention as shown in Figure 1, comprising: negative voltage generating circuit and elimination cross talk circuit; Described negative voltage generating circuit and elimination cross talk circuit are connected in series, the RC parallel circuits two that described elimination cross talk circuit comprises switch mosfet pipe and is connected in series with described switch mosfet pipe, described RC parallel circuits two comprises the resistance R2 and electric capacity C2 that are connected in parallel.
Negative voltage generating circuit comprises: power supply, triode Su, triode Sd and RC parallel circuits one; Described triode Su and triode Sd recommends connection, and is serially connected in the two ends of described power supply, and one end of RC parallel circuits one is connected between triode Su and triode Sd, the other end is connected with elimination cross talk circuit; Described RC parallel circuits one comprises the resistance R1 and electric capacity C1 that are connected in parallel.
Two triodes Su, Sd are that push-pull type connects, and resistance R1, R2 play dividing potential drop effect, and C1 is for generation of negative pressure, and Sa, C2 are for eliminating the impact of half-bridge circuit crosstalk on drive singal.
Be illustrated in figure 2 the present invention and be applied to half-bridge circuit schematic diagram.Comprise: brachium pontis under brachium pontis, lower brachium pontis driver and connected SiC MOSFET half-bridge circuit on upper brachium pontis driver and connected SiC MOSFET half-bridge circuit; On SiC MOSFET half-bridge circuit, brachium pontis and lower brachium pontis are connected in series;
Upper brachium pontis driver comprises: triode SHu and triode SHd recommends connection, and be serially connected in the two ends of power supply VH, parallel circuits one end that resistance R1_H and electric capacity C1_H forms is connected between triode SHu and triode SHd, the other end is divided into two-way, wherein a road connects brachium pontis on SiC MOSFET half-bridge circuit, connects the shunt circuit that switch mosfet pipe and resistance R2_H and electric capacity C2_H form successively in another road;
Lower brachium pontis driver comprises: triode SLu and triode SLd recommends connection, and be serially connected in the two ends of power supply VL, parallel circuits one end that resistance R1_L and electric capacity C1_L forms is connected between triode SLu and triode SLd, the other end is divided into two-way, wherein a road connects brachium pontis under SiC MOSFET half-bridge circuit, connects the shunt circuit that switch mosfet pipe and resistance R2_L and electric capacity C2_L form successively in another road.
Drive singal logic below in conjunction with Fig. 3 describes the advantage place of this drive circuit MOSFET driving more in the past in detail.
Within t0 ~ t1 period, as shown in Fig. 4 (a), switching tube SHu and switching tube SLu conducting, switching tube SHd, switching tube SHa, switching tube SLd, switching tube SLa turn off, electric capacity C1_H, C2_H, C1_L, C2_L carry out precharge, C1_H, C1_L are in order to provide negative pressure, and its voltage is by regulating the setting of R1_H, R2_H, R1_L, R2_L value.
T1 ~ t2 period is initial phase, as shown in Fig. 4 (b), switching tube SHu, SLu turn off, switching tube SHd, SLd conducting, electric capacity C1_H, C1_L provide negative pressure for the grid source electrode of main circuit upper and lower brachium pontis SiC MOSFET, make two switching tubes be in off state and power on to main circuit.
Within t2 ~ t3 period, as shown in Fig. 4 (c), t2 moment switching tube SHu conducting, SHd turns off, brachium pontis on SiC MOSFET half-bridge circuit is made to start conducting, auxiliary switch SHa and SLa is in off state all the time, because the parasitic capacitance of switching tube SHa is less, therefore can not affect the conducting speed of brachium pontis switching tube.For common driver, due to cross talk effect, lower brachium pontis can produce a forward spike on Cgs_L, cause misleading of brachium pontis under half-bridge circuit, the present invention avoids the generation of this situation from two aspects, on the one hand by SLa and C2_L branch road, forward spike is cut down, the probability that another aspect C1_L provides negative pressure also can reduce lower brachium pontis to mislead, to engraving brachium pontis complete conducting during t3.
T3 ~ t4 period, as shown in Fig. 4 (d), the switching tube SHu conducting of this period, SHd turns off, and upper brachium pontis conducting, lower brachium pontis turn off, and electric capacity C1_L continues as lower pipe and provides negative pressure, starts to turn off to engraving brachium pontis during t4.
T4 ~ t5 period, as shown in Fig. 4 (e), the t4 moment, the drive singal of second brachium pontis can produce a negative sense spike due to the afterflow effect of inductance, the negative pressure signal of this signal and driving self superposes and very easily makes negative pressure exceed limit value, causes the damage of SiC MOSFET.The present invention is by Closing Switch pipe SLa, and the capacitance due to C2_L is greater than the capacitance of Cgs_L, therefore can provide a low-impedance path, thus eliminates negative pressure spike to the impact of MOSFET.Switching tube SHd, SLd, SLa conducting of this period, rest switch pipe turns off.
In t5 ~ t6 period, as shown in Fig. 4 (f), switching tube SHd, SLd conducting, rest switch pipe turns off.Upper brachium pontis and lower brachium pontis are all in off state, wait for the arrival of next switch periods.
By reference to the accompanying drawings the specific embodiment of the present invention is described although above-mentioned; but not limiting the scope of the invention; one of ordinary skill in the art should be understood that; on the basis of technical scheme of the present invention, those skilled in the art do not need to pay various amendment or distortion that creative work can make still within protection scope of the present invention.
Claims (5)
1. a SiC MOSFET half-bridge circuit driver, is characterized in that, comprising: negative voltage generating circuit and elimination cross talk circuit; Described negative voltage generating circuit and elimination cross talk circuit are connected in series, the RC parallel circuits two that described elimination cross talk circuit comprises switch mosfet pipe and is connected in series with described switch mosfet pipe, described RC parallel circuits two comprises the resistance R2 and electric capacity C2 that are connected in parallel.
2. a kind of SiC MOSFET half-bridge circuit driver as claimed in claim 1, it is characterized in that, described negative voltage generating circuit comprises: power supply, triode Su, triode Sd and RC parallel circuits one; Described triode Su and triode Sd recommends connection, and is serially connected in the two ends of described power supply, and one end of RC parallel circuits one is connected between triode Su and triode Sd, the other end is connected with elimination cross talk circuit; Described RC parallel circuits one comprises the resistance R1 and electric capacity C1 that are connected in parallel.
3. a kind of SiC MOSFET half-bridge circuit driver as claimed in claim 2, it is characterized in that, during described triode Su conducting, triode Sd ends; When triode Su ends, triode Sd conducting.
4. the SiC MOSFET half-bridge circuit of driver described in an application rights requirement 1, it is characterized in that, comprising: brachium pontis under brachium pontis, lower brachium pontis driver and connected SiCMOSFET half-bridge circuit on upper brachium pontis driver and connected SiC MOSFET half-bridge circuit; On SiC MOSFET half-bridge circuit, brachium pontis and lower brachium pontis are connected in series;
Described upper brachium pontis driver comprises: triode SHu and triode SHd recommends connection, and be serially connected in the two ends of power supply VH, parallel circuits one end that resistance R1_H and electric capacity C1_H forms is connected between triode SHu and triode SHd, the other end is divided into two-way, wherein a road connects brachium pontis on SiC MOSFET half-bridge circuit, connects the shunt circuit that switch mosfet pipe and resistance R2_H and electric capacity C2_H form successively in another road;
Described lower brachium pontis driver comprises: triode SLu and triode SLd recommends connection, and be serially connected in the two ends of power supply VL, parallel circuits one end that resistance R1_L and electric capacity C1_L forms is connected between triode SLu and triode SLd, the other end is divided into two-way, wherein a road connects brachium pontis under SiC MOSFET half-bridge circuit, connects the shunt circuit that switch mosfet pipe and resistance R2_L and electric capacity C2_L form successively in another road.
5. a driving method for SiC MOSFET half-bridge circuit as claimed in claim 4, is characterized in that, comprising:
In t0 ~ t1 period, switching tube SHu and switching tube SLu conducting, switching tube SHd, switching tube SHa, switching tube SLd, switching tube SLa turn off, electric capacity C1_H, C2_H, C1_L, C2_L carry out precharge, C1_H, C1_L are in order to provide negative pressure, and its voltage is by regulating the setting of R1_H, R2_H, R1_L, R2_L value;
In t1 ~ t2 period, switching tube SHu, SLu turn off, switching tube SHd, SLd conducting, and electric capacity C1_H, C1_L provide negative pressure for the upper and lower brachium pontis of SiC MOSFET half-bridge circuit;
The t2 moment, switching tube SHu conducting, SHd turns off, and make brachium pontis on SiC MOSFET half-bridge circuit start conducting, switching tube SHa and SLa is in off state all the time, because the parasitic capacitance of switching tube SHa is less, can not affect the conducting speed of brachium pontis switching tube;
In t3 ~ t4 period, switching tube SHu conducting, SHd turns off, and upper brachium pontis conducting, lower brachium pontis turn off, and electric capacity C1_L continues as lower pipe and provides negative pressure;
In t4 ~ t5 period, switching tube SHd, SLd, SLa conducting, rest switch pipe turns off, and upper brachium pontis starts to turn off, and in the t5 moment, upper brachium pontis turns off completely, and switching tube SLa turns off;
In t5 ~ t6 period, switching tube SHd, SLd conducting, rest switch pipe turns off, and upper brachium pontis and lower brachium pontis are all in off state, wait for the arrival of next switch periods.
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| CN201510016603.5A CN104506028B (en) | 2015-01-13 | 2015-01-13 | SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor) half-bridge circuit driver and half-bridge circuit drive method |
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| CN201510016603.5A CN104506028B (en) | 2015-01-13 | 2015-01-13 | SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor) half-bridge circuit driver and half-bridge circuit drive method |
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| CN104506028A true CN104506028A (en) | 2015-04-08 |
| CN104506028B CN104506028B (en) | 2017-05-10 |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104883038A (en) * | 2015-06-15 | 2015-09-02 | 山东大学 | Half-bridge circuit employing negative voltage to turn off half-bridge circuit driver, and method |
| CN106385165A (en) * | 2016-11-08 | 2017-02-08 | 西安交通大学 | SiC MOSFET driving circuit with crosstalk suppression capability |
| CN107094009A (en) * | 2017-06-08 | 2017-08-25 | 北京智芯微电子科技有限公司 | A kind of drive module of sic filed effect pipe |
| CN107733220A (en) * | 2017-11-20 | 2018-02-23 | 武汉华海通用电气有限公司 | The drive circuit that a kind of anti-half-bridge or full-bridge switching power supply circuit mislead |
| CN108233684A (en) * | 2018-01-22 | 2018-06-29 | 深圳青铜剑科技股份有限公司 | The grid clutter reduction circuit and driving circuit of a kind of SiC MOSFET |
| CN108988617A (en) * | 2018-08-22 | 2018-12-11 | 哈尔滨工业大学 | A kind of driving circuit and circuits improvement method of active suppression SiC MOSFET crosstalk phenomenon |
| CN109450264A (en) * | 2018-10-29 | 2019-03-08 | 南京航空航天大学 | One kind recommending mode of resonance silicon carbide power tube drive circuit and its control method |
| CN109921620A (en) * | 2019-03-13 | 2019-06-21 | 安徽大学 | A kind of clutter reduction driving circuit and control method |
| WO2020029540A1 (en) * | 2018-08-08 | 2020-02-13 | 上海颛芯企业管理咨询合伙企业（有限合伙） | Driving circuit of power switch tube and device thereof |
| CN111525780A (en) * | 2020-03-16 | 2020-08-11 | 浙江大学 | Circuit, method and device for restraining driving crosstalk voltage of wide-bandgap power device in high-impedance off state |
| CN111614236A (en) * | 2020-06-15 | 2020-09-01 | 南京工程学院 | SiC MOSFET gate auxiliary circuit based on bridge circuit |
| CN113872420A (en) * | 2021-09-23 | 2021-12-31 | 上海电机学院 | Improved gate drive circuit for inhibiting bridge arm crosstalk of SiC-MOSFET (silicon carbide-metal oxide semiconductor field effect transistor) |
| US11831307B2 (en) | 2018-08-08 | 2023-11-28 | Inventchip Technology Co., Ltd. | Power switch drive circuit and device |
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| CN104883038B (en) * | 2015-06-15 | 2017-12-12 | 山东大学 | A kind of half-bridge circuit and its method that half-bridge circuit driver is turned off using negative pressure |
| CN104883038A (en) * | 2015-06-15 | 2015-09-02 | 山东大学 | Half-bridge circuit employing negative voltage to turn off half-bridge circuit driver, and method |
| CN106385165A (en) * | 2016-11-08 | 2017-02-08 | 西安交通大学 | SiC MOSFET driving circuit with crosstalk suppression capability |
| CN106385165B (en) * | 2016-11-08 | 2019-02-05 | 西安交通大学 | A kind of SiC MOSFET driving circuit with clutter reduction ability |
| CN107094009A (en) * | 2017-06-08 | 2017-08-25 | 北京智芯微电子科技有限公司 | A kind of drive module of sic filed effect pipe |
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| CN107733220A (en) * | 2017-11-20 | 2018-02-23 | 武汉华海通用电气有限公司 | The drive circuit that a kind of anti-half-bridge or full-bridge switching power supply circuit mislead |
| CN108233684A (en) * | 2018-01-22 | 2018-06-29 | 深圳青铜剑科技股份有限公司 | The grid clutter reduction circuit and driving circuit of a kind of SiC MOSFET |
| US11165423B2 (en) | 2018-08-08 | 2021-11-02 | Shanghai Zhuanxin Corporation Management Consulting Partnership | Power switch drive circuit and device |
| US11831307B2 (en) | 2018-08-08 | 2023-11-28 | Inventchip Technology Co., Ltd. | Power switch drive circuit and device |
| US11611339B2 (en) | 2018-08-08 | 2023-03-21 | Inventchip Technology Co., Ltd. | Power switch drive circuit and device |
| WO2020029540A1 (en) * | 2018-08-08 | 2020-02-13 | 上海颛芯企业管理咨询合伙企业（有限合伙） | Driving circuit of power switch tube and device thereof |
| CN108988617B (en) * | 2018-08-22 | 2019-07-09 | 哈尔滨工业大学 | A kind of driving circuit and circuits improvement method of active suppression SiC MOSFET crosstalk phenomenon |
| CN108988617A (en) * | 2018-08-22 | 2018-12-11 | 哈尔滨工业大学 | A kind of driving circuit and circuits improvement method of active suppression SiC MOSFET crosstalk phenomenon |
| CN109450264B (en) * | 2018-10-29 | 2021-09-21 | 南京航空航天大学 | Push-pull resonant type silicon carbide power tube driving circuit and control method thereof |
| CN109450264A (en) * | 2018-10-29 | 2019-03-08 | 南京航空航天大学 | One kind recommending mode of resonance silicon carbide power tube drive circuit and its control method |
| CN109921620B (en) * | 2019-03-13 | 2021-07-02 | 安徽大学 | Crosstalk suppression driving circuit and control method |
| CN109921620A (en) * | 2019-03-13 | 2019-06-21 | 安徽大学 | A kind of clutter reduction driving circuit and control method |
| CN111525780A (en) * | 2020-03-16 | 2020-08-11 | 浙江大学 | Circuit, method and device for restraining driving crosstalk voltage of wide-bandgap power device in high-impedance off state |
| CN111614236A (en) * | 2020-06-15 | 2020-09-01 | 南京工程学院 | SiC MOSFET gate auxiliary circuit based on bridge circuit |
| CN113872420A (en) * | 2021-09-23 | 2021-12-31 | 上海电机学院 | Improved gate drive circuit for inhibiting bridge arm crosstalk of SiC-MOSFET (silicon carbide-metal oxide semiconductor field effect transistor) |
| CN113872420B (en) * | 2021-09-23 | 2024-05-31 | 上海电机学院 | Improved gate electrode driving circuit for inhibiting SiC-MOSFET bridge arm crosstalk |
Also Published As
| Publication number | Publication date |
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| CN104506028B (en) | 2017-05-10 |
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