CN104506028B - SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor) half-bridge circuit driver and half-bridge circuit drive method - Google Patents
SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor) half-bridge circuit driver and half-bridge circuit drive method Download PDFInfo
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- CN104506028B CN104506028B CN201510016603.5A CN201510016603A CN104506028B CN 104506028 B CN104506028 B CN 104506028B CN 201510016603 A CN201510016603 A CN 201510016603A CN 104506028 B CN104506028 B CN 104506028B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention discloses an SiC MOSFET half-bridge circuit driver and a half-bridge circuit drive method. The SiC MOSFET half-bridge circuit driver comprises a negative voltage generating circuit and a crosstalk removing circuit which are connected in series. The crosstalk removing circuit comprises an MOSFET switch tube and an RC parallel circuit II connected with the MOSFET switch tube in series. The RC parallel circuit II comprises a resistor R2 and a capacitor C2 which are connected in parallel. The SiC MOSFET half-bridge circuit driver and the half-bridge circuit drive method have the advantages of reducing the use of negative voltage power supply and saving the cost by generating negative voltage through a passive component for the drive circuit and effectively solving the problem of negative voltage peak of drive signals due to half-bridge unit crosstalk and accordingly reducing the risk of damage to an SiC device due to the fact that the negative voltage of a gate source electrode exceeds a limit value.
Description
Technical field
The present invention relates to a kind of a kind of SiC MOSFET half-bridge circuits driver with negative pressure shut-off and half-bridge circuit drive
Dynamic method.
Background technology
SiC material as a kind of wide bandgap semiconductor materials, with forbidden band broadband it is big, breakdown voltage is high, thermal conductivity is high etc.
Good physicochemical properties.In recent years, it is increasingly mature with SiC material, SiC device field of power electronics application
Jing causes extensive concern.Wherein, SiC MOSFET receive the favor of researcher with its high withstand voltage and high switching frequency.By
It is different compared with Si material MOSFET in the intrinsic characteristics of SiC MOSFET, therefore the design of its drive circuit.On the one hand, in order to
The switching frequency of device is improved, reduces the turn-off time, the design of driving needs to consider negative pressure, on the other hand, SiC MOSFET's
The negative pressure that grid source electrode can bear is less, therefore negative voltage can not exceed its peak suction value.Further, since two level of routine
Inverter is that based on half-bridge circuit unit, therefore two switching tube parasitic parameters of half-bridge circuit are in high dv/dt conditions
Under the i.e. crosstalk that influences each other also can not be ignored.
At present, the design of most of driver is all that negative pressure electricity is added on the basis of original Si mosfet drivers
Source, so as to increase design cost, and does not account for impact of the half-bridge circuit crosstalk to drive signal, causes grid source electrode negative pressure
The maximum magnitude that spike can bear beyond SiC MOSFET.
The content of the invention
The purpose of the present invention is exactly to solve the above problems, it is proposed that a kind of SiC MOSFET half with negative pressure shut-off
Bridge circuit driver and half-bridge circuit driving method, the structure, using negative pressure is produced, reduces cost by passive device；
Meanwhile, on the premise of main circuit switch pipe switching speed is not affected, eliminate the negative sense that half-bridge circuit crosstalk brings drive signal
Due to voltage spikes.
To achieve these goals, the present invention is adopted the following technical scheme that：
A kind of SiC MOSFET half-bridge circuit drivers, including：Negative voltage generating circuit and elimination cross talk circuit；The negative pressure
Produce circuit and eliminate cross talk circuit be connected in series, it is described elimination cross talk circuit include switch mosfet pipe and with it is described
The RC parallel circuits two that switch mosfet pipe is connected in series, the RC parallel circuits two include resistance R2 and the electric capacity being connected in parallel
C2。
The negative voltage generating circuit includes：Power supply, triode Su, triode Sd and RC parallel circuit one；Three pole
Pipe Su and triode Sd recommend connection, and are serially connected in the two ends of the power supply, and one end of RC parallel circuits one is connected to triode
Between Su and triode Sd, the other end with eliminate cross talk circuit be connected；The RC parallel circuits one include the resistance being connected in parallel
R1 and electric capacity C1.
When the triode Su is turned on, triode Sd cut-offs；When triode Su ends, triode Sd conductings.
A kind of SiC MOSFET half-bridge circuits using the driver, including：Upper bridge arm driver and it is connected thereto
SiCMOSFET half-bridge circuits on bridge arm under bridge arm, lower bridge arm driver and connected SiC MOSFET half-bridge circuits；
Bridge arm and lower bridge arm are connected in series on SiCMOSFET half-bridge circuits；
The upper bridge arm driver includes：Triode SHu and triode SHd recommend connection, and are serially connected in the two of power supply VH
Parallel circuit one end that end, resistance R1_H and electric capacity C1_H are constituted is connected between triode SHu and triode SHd, the other end
It is divided into two-way, wherein connecting bridge arm on SiC MOSFET half-bridge circuits all the way, another road is sequentially connected in series the first switch mosfet pipe
With the shunt circuit of resistance R2_H and electric capacity C2_H compositions；
The lower bridge arm driver includes：Triode SLu and triode SLd recommend connection, and are serially connected in the two of power supply VL
Parallel circuit one end that end, resistance R1_L and electric capacity C1_L are constituted is connected between triode SLu and triode SLd, the other end
It is divided into two-way, wherein connecting bridge arm under SiC MOSFET half-bridge circuits all the way, another road is sequentially connected in series the second switch mosfet pipe
With the shunt circuit of resistance R2_L and electric capacity C2_L compositions.
A kind of driving method of SiC MOSFET half-bridge circuits, including：
In t0～t1 periods, switching tube SHu and switching tube SLu are turned on, switching tube SHd, switching tube SHa, switching tube SLd,
Switching tube SLa is turned off, and electric capacity C1_H, C2_H, C1_L, C2_L enter line precharge, C1_H, C1_L to provide negative pressure, its voltage
By being set for regulation to R1_H, R2_H, R1_L, R2_L value；
In t1～t2 periods, switching tube SHu, SLu shut-off, switching tube SHd, SLd conducting, electric capacity C1_H, C1_L are SiC
The upper and lower bridge arm of MOSFET half-bridge circuits provides negative pressure；
T2 moment, switching tube SHu conductings, SHd shut-offs begin to turn on bridge arm on SiC MOSFET half-bridge circuits, switch
Pipe SHa and SLa are off all the time state, because the parasitic capacitance of switching tube SHa is less, do not interfere with bridge arm switching tube
Conducting speed；
In t3～t4 periods, switching tube SHu conductings, SHd shut-offs, upper bridge arm conducting, the shut-off of lower bridge arm, electric capacity C1_L continues
Negative pressure is provided for down tube；
In t4～t5 periods, switching tube SHd, SLd, SLa conducting, the shut-off of rest switch pipe, upper bridge arm begins to turn off, during t5
Carve, upper bridge arm is complete switched off, switching tube SLa shut-offs；
In t5～t6 periods, switching tube SHd, SLd conducting, rest switch pipe is turned off, and upper bridge arm and lower bridge arm are in closing
Disconnected state, waits the arrival of next switch periods.
The invention has the beneficial effects as follows：
Present invention driver circuit produces negative pressure by passive device, reduces the use of negative supply, has saved cost；Together
When, the negative pressure spike that half-bridge cells crosstalk is caused to drive signal is effectively solved, reduce because grid source electrode negative pressure exceedes
Limit value causes the risk that SiC device is damaged.
Description of the drawings
Fig. 1 is the electrical block diagram of the present invention；
Fig. 2 is the Function detection circuit of the present invention；
Fig. 3 is drive signal logic chart of the present invention；
Fig. 4 (a)-(f) is respectively day part circuit work isoboles.
Specific embodiment：
Below in conjunction with the accompanying drawings the present invention will be further described with embodiment：
The topological structure of SiC MOSFET half-bridge circuit drivers of the present invention as shown in figure 1, including：Negative voltage generating circuit and
Eliminate cross talk circuit；The negative voltage generating circuit and elimination cross talk circuit are connected in series, and the elimination cross talk circuit includes
Switch mosfet pipe and the RC parallel circuits two being connected in series with the switch mosfet pipe, the RC parallel circuits two include
The resistance R2 being connected in parallel and electric capacity C2.
Negative voltage generating circuit includes：Power supply, triode Su, triode Sd and RC parallel circuit one；The triode Su
Recommend connection with triode Sd, and be serially connected in the two ends of the power supply, one end of RC parallel circuits one be connected to triode Su and
Between triode Sd, the other end with eliminate cross talk circuit be connected；The RC parallel circuits one include the resistance R1 that is connected in parallel and
Electric capacity C1.
Two triodes Su, Sd are push-pull type connection, and resistance R1, R2 play partial pressure effect, and C1 is used to produce negative pressure, Sa, C2
For eliminating impact of the half-bridge circuit crosstalk to drive signal.
It is illustrated in figure 2 the present invention and is applied to half-bridge circuit schematic diagram.Including：Upper bridge arm driver and connected
Bridge arm under bridge arm, lower bridge arm driver and connected SiC MOSFET half-bridge circuits on SiCMOSFET half-bridge circuits；
Bridge arm and lower bridge arm are connected in series on SiCMOSFET half-bridge circuits；
Upper bridge arm driver includes：Triode SHu and triode SHd recommend connection, and are serially connected in the two ends of power supply VH, electricity
Parallel circuit one end of resistance R1_H and electric capacity C1_H compositions is connected between triode SHu and triode SHd, the other end is divided into two
Road, wherein connecting bridge arm on SiC MOSFET half-bridge circuits all the way, another road is sequentially connected in series the first switch mosfet pipe and resistance
The shunt circuit of R2_H and electric capacity C2_H compositions；
Lower bridge arm driver includes：Triode SLu and triode SLd recommend connection, and are serially connected in the two ends of power supply VL, electricity
Parallel circuit one end of resistance R1_L and electric capacity C1_L compositions is connected between triode SLu and triode SLd, the other end is divided into two
Road, wherein connecting bridge arm under SiC MOSFET half-bridge circuits all the way, another road is sequentially connected in series the second switch mosfet pipe and resistance
The shunt circuit of R2_L and electric capacity C2_L compositions.
The advantage institute that the more conventional MOSFET of the drive circuit drives is described in detail with reference to the drive signal logic of Fig. 3
.
Within t0～t1 periods, such as shown in Fig. 4 (a), switching tube SHu and switching tube SLu is turned on, switching tube SHd, switching tube
SHa, switching tube SLd, switching tube SLa shut-offs, electric capacity C1_H, C2_H, C1_L, C2_L enter line precharge, and C1_H, C1_L are to carry
For negative pressure, its voltage can be by being set for regulation to R1_H, R2_H, R1_L, R2_L value.
T1～t2 periods are initial phase, shown in such as Fig. 4 (b), switching tube SHu, SLu shut-off, and switching tube SHd, SLd lead
Logical, electric capacity C1_H, C1_L provide negative pressure for the grid source electrode of the upper and lower bridge arm SiC MOSFET of main circuit, make two switching tubes in pass
Disconnected state and on main circuit electricity.
Within t2～t3 periods, such as shown in Fig. 4 (c), t2 moment switching tubes SHu conductings, SHd shut-offs make SiC MOSFET
Bridge arm begins to turn on half-bridge circuit, and auxiliary switch SHa and SLa are off all the time state, due to the parasitism of switching tube SHa
Electric capacity is less, therefore does not interfere with the conducting speed of bridge arm switching tube.For common driver, due to cross talk effect, under
Bridge arm can produce a positive spike on Cgs_L, cause misleading for bridge arm under half-bridge circuit, and the present invention keeps away in terms of two
Exempt from the generation of this case, on the one hand cut down positive spike by SLa and C2_L branch roads, another aspect C1_L provides negative pressure
The probability that lower bridge arm misleads can be reduced, bridge arm is engraved during to t3 fully on.
Shown in t3～t4 periods, such as Fig. 4 (d), period switching tube SHu conductings, SHd shut-offs, upper bridge arm conducting, lower bridge arm
Shut-off, electric capacity C1_L continues as down tube and provides negative pressure, engraves bridge arm during to t4 and begins to turn off.
Shown in t4～t5 periods, such as Fig. 4 (e), the t4 moment is acted on due to the afterflow of inductance, the drive signal meeting of lower half bridge arm
Produce a negative sense spike, the signal with drive the negative pressure signal of itself be superimposed easily make negative pressure exceed limit value, cause SiC
The damage of MOSFET.The present invention because the capacitance of C2_L is more than the capacitance of Cgs_L, therefore can be provided by closure switch pipe SLa
One low-impedance path, so as to eliminate impact of the negative pressure spike to MOSFET.This period switching tube SHd, SLd, SLa are turned on, its
Remaining switching tube shut-off.
In t5～t6 periods, such as shown in Fig. 4 (f), switching tube SHd, SLd conducting, the shut-off of rest switch pipe.Upper bridge arm is with
Bridge arm is in off state, waits the arrival of next switch periods.
Although the above-mentioned accompanying drawing that combines is described to the specific embodiment of the present invention, not to present invention protection model
The restriction enclosed, one of ordinary skill in the art should be understood that on the basis of technical scheme those skilled in the art are not
Need the various modifications made by paying creative work or deformation still within protection scope of the present invention.
Claims (2)
1. a kind of SiC MOSFET half-bridge circuits of application SiC MOSFET half-bridge circuit drivers, is characterized in that, SiC
MOSFET half-bridge circuit drivers include：Negative voltage generating circuit and elimination cross talk circuit；The negative voltage generating circuit and elimination string
Circuit connected in series connection is disturbed, the elimination cross talk circuit includes switch mosfet pipe and is connected in series with the switch mosfet pipe
RC parallel circuits two, the RC parallel circuits two include the resistance R2 that is connected in parallel and electric capacity C2；
The SiC MOSFET half-bridge circuits include：On upper bridge arm driver and connected SiC MOSFET half-bridge circuits
Bridge arm under bridge arm, lower bridge arm driver and connected SiC MOSFET half-bridge circuits；On SiC MOSFET half-bridge circuits
Bridge arm and lower bridge arm are connected in series；
The upper bridge arm driver includes：Triode SHu and triode SHd recommend connection, and are serially connected in the two ends of power supply VH, electricity
Parallel circuit one end of resistance R1_H and electric capacity C1_H compositions is connected between triode SHu and triode SHd, the other end is divided into two
Road, wherein connecting bridge arm on SiC MOSFET half-bridge circuits all the way, another road is sequentially connected in series the first switch mosfet pipe and resistance
The shunt circuit of R2_H and electric capacity C2_H compositions；
The lower bridge arm driver includes：Triode SLu and triode SLd recommend connection, and are serially connected in the two ends of power supply VL, electricity
Parallel circuit one end of resistance R1_L and electric capacity C1_L compositions is connected between triode SLu and triode SLd, the other end is divided into two
Road, wherein connecting bridge arm under SiC MOSFET half-bridge circuits all the way, another road is sequentially connected in series the second switch mosfet pipe and resistance
The shunt circuit of R2_L and electric capacity C2_L compositions.
2. a kind of driving method of SiC MOSFET half-bridge circuits as claimed in claim 1, is characterized in that, including：
In t0～t1 periods, switching tube SHu and switching tube SLu is turned on, switching tube SHd, switching tube SHa, switching tube SLd, switch
Pipe SLa is turned off, and electric capacity C1_H, C2_H, C1_L, C2_L enter line precharge, and, to provide negative pressure, its voltage passes through for C1_H, C1_L
Regulation is set for R1_H, R2_H, R1_L, R2_L value；
In t1～t2 periods, switching tube SHu, SLu shut-off, switching tube SHd, SLd conducting, electric capacity C1_H, C1_L are SiC
The upper and lower bridge arm of MOSFET half-bridge circuits provides negative pressure；
T2 moment, switching tube SHu conductings, SHd shut-offs begin to turn on bridge arm on SiC MOSFET half-bridge circuits, switching tube SHa
State is off all the time with SLa, because the parasitic capacitance of switching tube SHa is less, does not interfere with the conducting of bridge arm switching tube
Speed；
In t3～t4 periods, switching tube SHu conductings, SHd shut-offs, upper bridge arm conducting, the shut-off of lower bridge arm, electric capacity C1_L is continued as down
Pipe provides negative pressure；
In t4～t5 periods, switching tube SHd, SLd, SLa conducting, rest switch pipe shut-off, upper bridge arm begins to turn off, the t5 moment,
Upper bridge arm is complete switched off, switching tube SLa shut-offs；
In t5～t6 periods, switching tube SHd, SLd conducting, rest switch pipe is turned off, and upper bridge arm and lower bridge arm are in turning off shape
State, waits the arrival of next switch periods.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510016603.5A CN104506028B (en) | 2015-01-13 | 2015-01-13 | SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor) half-bridge circuit driver and half-bridge circuit drive method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510016603.5A CN104506028B (en) | 2015-01-13 | 2015-01-13 | SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor) half-bridge circuit driver and half-bridge circuit drive method |
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| CN104506028A CN104506028A (en) | 2015-04-08 |
| CN104506028B true CN104506028B (en) | 2017-05-10 |
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Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104883038B (en) * | 2015-06-15 | 2017-12-12 | 山东大学 | A kind of half-bridge circuit and its method that half-bridge circuit driver is turned off using negative pressure |
| CN106385165B (en) * | 2016-11-08 | 2019-02-05 | 西安交通大学 | A kind of SiC MOSFET driving circuit with clutter reduction ability |
| CN107094009B (en) * | 2017-06-08 | 2023-03-21 | 北京智芯微电子科技有限公司 | Driving module of silicon carbide field effect tube |
| CN107733220A (en) * | 2017-11-20 | 2018-02-23 | 武汉华海通用电气有限公司 | The drive circuit that a kind of anti-half-bridge or full-bridge switching power supply circuit mislead |
| CN108233684A (en) * | 2018-01-22 | 2018-06-29 | 深圳青铜剑科技股份有限公司 | The grid clutter reduction circuit and driving circuit of a kind of SiC MOSFET |
| US11831307B2 (en) | 2018-08-08 | 2023-11-28 | Inventchip Technology Co., Ltd. | Power switch drive circuit and device |
| CN108539964B (en) | 2018-08-08 | 2018-11-20 | 上海颛芯企业管理咨询合伙企业（有限合伙） | The driving circuit and its device of power switch tube |
| CN108988617B (en) * | 2018-08-22 | 2019-07-09 | 哈尔滨工业大学 | A kind of driving circuit and circuits improvement method of active suppression SiC MOSFET crosstalk phenomenon |
| CN109450264B (en) * | 2018-10-29 | 2021-09-21 | 南京航空航天大学 | Push-pull resonant type silicon carbide power tube driving circuit and control method thereof |
| CN109921620B (en) * | 2019-03-13 | 2021-07-02 | 安徽大学 | Crosstalk suppression driving circuit and control method |
| CN111525780B (en) * | 2020-03-16 | 2021-04-20 | 浙江大学 | Circuit, method and device for suppressing drive crosstalk voltage of wide-bandgap power device |
| CN111614236A (en) * | 2020-06-15 | 2020-09-01 | 南京工程学院 | SiC MOSFET gate auxiliary circuit based on bridge circuit |
| CN113872420B (en) * | 2021-09-23 | 2024-05-31 | 上海电机学院 | Improved gate electrode driving circuit for inhibiting SiC-MOSFET bridge arm crosstalk |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4682173B2 (en) * | 2007-07-12 | 2011-05-11 | 株式会社日立製作所 | Voltage-driven semiconductor element drive circuit and inverter device |
| US9806593B2 (en) * | 2008-08-21 | 2017-10-31 | Mitsubishi Electric Corporation | Drive circuit of power semiconductor device |
| CN101753000A (en) * | 2009-12-17 | 2010-06-23 | 东南大学 | Power MOS pipe grid drive circuit and method for grid floating and level switching |
| CN102307002B (en) * | 2011-09-14 | 2013-07-31 | 深圳航天科技创新研究院 | Power switch tube drive circuit with negative pressure turn-off function |
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