CN109450264A - One kind recommending mode of resonance silicon carbide power tube drive circuit and its control method - Google Patents
One kind recommending mode of resonance silicon carbide power tube drive circuit and its control method Download PDFInfo
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- CN109450264A CN109450264A CN201811267339.2A CN201811267339A CN109450264A CN 109450264 A CN109450264 A CN 109450264A CN 201811267339 A CN201811267339 A CN 201811267339A CN 109450264 A CN109450264 A CN 109450264A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/337—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only in push-pull configuration
- H02M3/3376—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only in push-pull configuration with automatic control of output voltage or current
- H02M3/3378—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only in push-pull configuration with automatic control of output voltage or current in a push-pull configuration of the parallel type
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
- Dc-Dc Converters (AREA)
Abstract
The invention discloses one kind to recommend mode of resonance silicon carbide power tube drive circuit and its control method, circuit includes DC voltage source, the first power tube, the second power tube, third power tube with anti-paralleled diode, high-frequency isolation transformer, resonant inductance, level shifting circuit, by driving silicon carbide power pipe, third capacitor, the high-frequency isolation transformer includes the first winding of primary side, the second winding of primary side, vice-side winding, and level shifting circuit includes first resistor, first capacitor, second resistance, the second capacitor and partial pressure diode.In addition a kind of control method is also provided, one kind for controlling described recommends mode of resonance silicon carbide power tube drive circuit.The present invention can be utilized being stored in by the energy regenerating in driving silicon carbide power pipe input capacitance, can not only be reduced drive loss, also be can reduce by the switching loss of driving power pipe.
Description
Technical field
The present invention relates to DC-DC soft switch transducer technical fields, and in particular to one kind recommends mode of resonance silicon carbide power
Tube drive circuit.
Background technique
The grid-connected power generation systems such as solar energy, wind energy and fuel cell using more and more extensive, DC-DC, DC-AC etc. become
The performance of parallel operation is also directly related to the overall technology of grid-connected power generation system, in order to further increase grid-connected power generation system
Efficiency of transmission, reliability reduce the volume of whole system, and converter also gradually develops towards the direction of high frequency, using carbonization
The application advantage of the new powers switching device such as silicon also gradually highlights.With the raising of switching frequency, driven using conventional voltage type
Dynamic circuit bring high-frequency loss cannot necessarily give full play to the superior function of silicon carbide power pipe, driving voltage it is asymmetric this
Characteristic also implies that the driving circuit of silicon carbide power device will redesign.Push-pull converter have structure it is simple, electrically every
From, transformer utilization factor is high the advantages that, be commonly applied in grid-connected power generation system, push-pull power amplifier circuit is also widely used in
In power tube drive circuit.In hard switching state, drive power losses are whole for traditional voltage-type structure driving power pipe work
On gate-drive resistance, the loss of driving circuit increases with the raising of switching frequency for consumption.Mode of resonance driving circuit can
The power loss on driving resistance is consumed with recycling, can significantly reduce drive loss under high-frequency work, improve efficiency.It is existing
It deposits big problem is lost in high frequency for the driving circuit of silicon carbide power pipe, partially use the driving of mode of resonance driving circuit
Voltage is free of negative pressure, it cannot be guaranteed that being turned off by stablizing for driving silicon carbide power pipe, and efficiency can optimize.In order to greatest extent
Ground plays characteristic of the silicon carbide power pipe in high-frequency converter, needs to design a kind of low-loss driving electricity with level conversion
Road
Summary of the invention
To solve the above problems, the present invention, which provides one kind, recommends mode of resonance silicon carbide power tube drive circuit, including including
DC voltage source, the first power tube, the second power tube, third power tube with anti-paralleled diode, high-frequency isolation transformer are humorous
Shake inductance, level shifting circuit, and by driving silicon carbide power pipe, third capacitor, the high-frequency isolation transformer includes primary side
First winding, the second winding of primary side, vice-side winding, level shifting circuit include first resistor, first capacitor, second resistance,
Two capacitors and partial pressure diode, wherein the drain electrode of the anode connection third power tube of DC voltage source, the source electrode of third power tube
The different name end of the first winding of primary side and the Same Name of Ends of the second winding of primary side are connected, the Same Name of Ends of the first winding of primary side connects the first function
The drain electrode of rate pipe, the different name end of the second winding of primary side connect the drain electrode of the second power tube；The source electrode of first power tube and the second function
The source electrode of rate pipe is connected with the cathode of DC voltage source jointly；The Same Name of Ends and resonant inductance of high-frequency isolation transformer vice-side winding
One end connection, the different name end of vice-side winding is connected with one end of one end of first resistor, first capacitor, first resistor it is another
End, first capacitor the other end with by the source electrode of driving silicon carbide power pipe, divide one end of the anode of diode, third capacitor
Connected with ground, divide the cathode of diode and one end of second resistance, one end of the second capacitor connects, second resistance it is another
End, the other end of the other end of the second capacitor and resonant inductance, the grid for driving silicon carbide power pipe, third capacitor the other end
Connection.
Input direct-current voltage by three power tubes of high-frequency isolation transformer primary side two-by-two alternate conduction act on high frequency every
The first winding of primary side and the second winding of primary side from transformer, resonant inductance occur with by the input capacitance resonance of driving power pipe
When the first power tube and the second power tube are connected jointly, the resonance current of generation as by the driving current of driving power pipe,
It can make that the energy in silicon carbide power pipe input capacitance is driven to be recycled, switching loss is reduced.High-frequency isolation
Transformer secondary winding induces a symmetrical voltage signal, by level shifting circuit become asymmetric voltage signal with
Meet the driving requirement of silicon carbide power pipe, the presence of negative pressure can guarantee the reliable turn-off of silicon carbide power pipe.
Further, first power tube, the second power tube, third power tube are power silicon MOSFET.
Further, the high-frequency isolation transformer pair side resonant inductance is the leakage inductance of high-frequency isolation transformer.
Further, the first winding of primary side, the second winding of primary side of the high-frequency isolation transformer, vice-side winding three
The equal turn numbers of winding can guarantee the magnetic balance of high-frequency isolation transformer, and converter biography will not be influenced because of core saturation
Defeated efficiency and working performance.
Present invention simultaneously provides a kind of control methods, recommend the drive of mode of resonance silicon carbide power pipe for controlling described one kind
Dynamic circuit, comprising the following steps:
Step 1: shutdown third power tube after the Td/2 time is connected in the first power tube and third power tube jointly；
Step 2: the second power tube is opened after dead time Ts, T is connected in the second power tube and the first power tube jointly
The first power tube is turned off after (1-d)/2；
Step 3: third power tube is opened after dead time Ts, third power tube is connected jointly with the second power tube
Third power tube is turned off after the Td/2 time；
Step 4: the first power tube is opened after dead time Ts, T is connected in the second power tube and the first power tube jointly
After (1-d)/2, the second power tube is turned off；
Step 5: third power tube is opened after dead time Ts, the first power tube, third power tube simultaneously turn on, and return
To step 1, recycled.
Further, the dead time is greater than the second power tube and is switched on or off and third power tube either off or on
The sum of transient time, and the time the short more advantageous to the resonant state of the mode, and the presence of dead time can be to avoid one
Straight-through problem occurs for bridge arm power tube.
Further, the T is the switch periods of the first power tube or the second power tube.
Further, the d is the conducting dutycycle of the first power tube or the second power tube.
Compared with prior art, advantageous effects of the invention are as follows:
(1) present invention is conducive to recycling input capacitance using inductance with by driving silicon carbide power pipe input capacitance resonance
In the energy that stores, reduce switching loss.
(2) outputting drive voltage of the invention is asymmetrical voltage, meets the requirement of silicon carbide power pipe driving voltage, is born
The presence of pressure can guarantee by the reliable turn-off of driving power pipe.
(3) driving circuit topological structure of the invention is simple, and smaller, level shifting circuit part is lost in driving circuit itself
Substantially on resonant process without influence, excessive excess loss is not will cause.
Detailed description of the invention
Fig. 1 is electrical block diagram of the invention.
Fig. 2 is PWM switching sequence figure of the invention.
Fig. 3 is the main waveform diagram of implementing circuit of the present invention.
Fig. 4~attached drawing 9 is each switch mode schematic diagram of the embodiment of the present invention.
Wherein, Vc: DC voltage source；S1~S3: power switch tube；Tr: high-frequency isolation transformer；ugs1~ugs3: power tube
S1~S3Driving signal；Lr: resonant inductance；Q: driven silicon carbide power pipe；Cgs: the corresponding input capacitance of Q；ip: it flows through
Power tube S3Electric current；ir: driving current；vgs: the driving voltage of power tube Q；vs: high-frequency isolation transformer TrWinding voltage.
vc1: capacitor C1On voltage；vc2: capacitor C2On voltage.
Specific embodiment
In order to which the present invention is more specifically described, technical solution of the present invention is carried out with reference to the accompanying drawings and embodiments detailed
Description.
As shown in Figure 1, one kind recommends mode of resonance silicon carbide power tube drive circuit,
Including DC voltage source Vc, the first power tube S with anti-paralleled diode1, the second power tube S2, third power tube
S3, high-frequency isolation transformer Tr, resonant inductance Lr, level shifting circuit, by driving silicon carbide power pipe Q, the high-frequency isolation
Transformer TrInclude the first winding of primary side Np1, the second winding of primary side Np2, vice-side winding Ns, level shifting circuit includes first resistor
R1, first capacitor C1, second resistance R2, the second capacitor C2With partial pressure diode D1.Wherein, DC voltage source VcAnode connect third
Power tube S3Drain electrode, third power tube S3Source electrode meet the first winding of primary side Np1Different name end and the second winding Np2It is of the same name
End, the first winding of primary side Np1First power tube of termination of the same name S1Drain electrode, the second winding of primary side Np2Different name terminate the second function
Rate pipe S2Drain electrode；First power tube S1Source electrode and the second power tube S2Source electrode jointly with DC voltage source VcCathode phase
Even；Vice-side winding NsSame Name of Ends and resonant inductance LrOne end connection, vice-side winding NsDifferent name end and level shifting circuit in the
One resistance R1One end, first capacitor C1One end be connected, first resistor R1The other end, first capacitor C1The other end and quilt
Drive source electrode, the partial pressure diode D of silicon carbide power pipe Q1Anode, third capacitor CgsOne end and ground connection connection, partial pressure
Diode D1Cathode and second resistance R2One end, the second capacitor C2One end connection, second resistance R2The other end, second
Capacitor C2The other end and resonant inductance LrThe other end, drive silicon carbide power pipe Q grid, third capacitor CgsThe other end
Connection.
The present invention also provides a kind of control methods, recommend the driving of mode of resonance silicon carbide power pipe for controlling above-mentioned one kind
Circuit, as shown in Fig. 2, using pulse width modulating technology (PWM, Pulse Width Modulation) switching sequence: 1.
One and third power tube S1With S3Third power tube S is turned off after the common conducting Td/2 time3；2. open-minded after dead time Ts
Second power tube S2, the second power tube S2With the first power tube S1The first power tube S is turned off after common conducting T (1-d)/21；3. passing through
Third power tube S is opened after crossing dead time Ts3, third power tube S3With the second power tube S2It is closed after the common conducting Td/2 time
Disconnected third power tube S3；4. opening the first power tube S after dead time Ts1, the second power tube S2With the first power tube S1Altogether
After conducting T (1-d)/2, the second power tube S is turned off2；5. opening third power tube S after dead time Ts3, first, third
Power tube S1With S3It simultaneously turns on, returns to 1. a process；So circulation is gone down.
4~attached drawing, 9 couples of present invention recommend the specific works of mode of resonance silicon carbide power tube drive circuit with reference to the accompanying drawing
Principle is described in detail.Stable state downconverter shares 12 switch mode in a switch periods, is [t respectively0~
t1]、[t1~t2]、[t2~t3]、[t3~t4]、[t4~t5]、[t5~t6]、[t6~t7]、[t7~t8]、[t8~t9]、[t9~
t10]、[t10~t11]、[t11~t12], wherein [t0~t6] it is preceding half period, [t7~t12] it is second half of the cycle.Attached drawing 3 is
The switching sequence figure of preceding half period below makes a concrete analysis of the working principle of each mode.
1 mode, 1 [t0~t1] respective figure 4
In t0~t1Stage, driving tube S1With S3Conducting drives high-frequency isolation transformer TrSame Name of Ends voltage is clamped at-
Vc, since the high-frequency isolation transformer turn ratio is 1:1, so high-frequency isolation transformer secondary voltage is clamped at-Vc, D1Positive guide
It is logical, flow through D1Electric current very little therefore R2On loss can ignore substantially.The gate-source voltage of silicon carbide power pipe Q is clamped
In capacitor C2Voltage value Vc2, it is held off, negative grid source voltage can prevent function caused by dv/dt under bridge arm high-frequency work
Rate pipe misleads, and increases the reliability of shutdown.Silicon carbide power pipe Q gate-source voltage Vgs_LExpression formula are as follows:
2 mode, 2 [t1~t2] respective figure 5
t1Moment turns off S3With open S2, turn off and open between there are dead time Ts, Ts is greater than power tube S2、S3's
The sum of open, turn off the transient time, and the time the short more advantageous to the resonant state of the mode.Due to t1Moment is former and deputy
Side electric current ip、irIt is zero, therefore S3Zero Current Switch (ZCS, Zero Current Switch) shutdown, S can be achieved2It realizes
ZCS is open-minded.Then, driving high-frequency isolation transformer winding voltage is 0, due to previous moment capacitor CgsReceiving size is Vgs_L's
Voltage, when high-frequency isolation transformer voltage is 0, capacitor CgsWith inductance LrSeries resonance, resonance current i occursrTo CgsCharging,
Change waveform such as attached drawing 3t1~t2The half-sine wave in stage.t2Moment, as electric current irWhen resonance is to zero, which terminates.Due to
Resonant tank resistance RpThere are pressure drop (wherein RpIncluding driving power pipe S1With S2Conducting resistance, high-frequency isolation transformer pair side
Winding resistance, resistance R1And the sum of internal gate driving resistance of driving power pipe Q), therefore arrive t2Moment, vgsBoth end voltage
Rise to Vg1, t2Moment, vgsSize Vg1Are as follows:
In formula:
Wherein Vg1With input voltage source VcWith capacitor C1Upper voltage Vc1The sum of i.e. Vgs_HThere are voltage difference delta Vc, size are as follows:
Under this mode, driving current does not flow through DC voltage source, electric current ipFlow through S1、S2With primary side winding, secondary side electricity
Flow irFlow through Lr、C1、Cgs, there it can be seen that DC voltage source is not provided with energy in resonant process, driving energy is come
From in C1、Cgs, this shows that resonance drive circuit can significantly recycle the energy of input capacitance storage, reduces loss, improves efficiency.
3 mode, 3 [t2~t3] respective figure 6
t2Moment, electric current irResonance is to zero, driving tube S1ZCS shutdown, S can be achieved3It realizes that ZCS is open-minded, drives high-frequency isolation
Transformer winding voltage and capacitor C1On voltage continue jointly to CgsCharging, t3Moment, vgsBy Vg1Charge to Vgs_H, this mould
State terminates.Silicon carbide power pipe Q gate-source voltage Vgs_HExpression formula are as follows:
4 mode, 4 [t3~t4] respective figure 7
t3After moment, primary side driving tube S2、S3Conducting, DC voltage source VcClamp is in high-frequency isolation transformer vice-side winding
On, divide diode D1Cut-off, therefore, vgsVoltage can be clamped at winding voltage VcWith capacitor C1Upper voltage Vc1The sum of i.e. Vgs_H,
Silicon carbide power pipe Q is in the forward conduction stage.
5 mode, 5 [t4~t5] respective figure 8
t4Moment, ip=ir=0, it can ZCS shutdown driving tube S3S is opened with ZCS1, capacitor CgsWith inductance LrIt is humorous to constitute series connection
Resonance occurs again for vibration circuit, and working principle is similar with mode 1, but secondary side direction of resonant current and mode 2 are reversed, CgsResonance
Electric discharge；t5Moment, vgsBoth end voltage drops to Vg2, this process terminates.VgsSize Vg2Are as follows:
6 mode, 6 [t5~t6] respective figure 9
t5Moment, electric current irResonance is to zero again, driving tube S2ZCS shutdown, S can be achieved3Realize ZCS it is open-minded, driving high frequency every
From transformer winding voltage VcWith capacitor C1Upper voltage Vc1Continue together to CgsElectric discharge, t6Moment, vgsIt is discharged to Vgs_L, this mode
Terminate.
t6After moment, drive circuit works state returns to mode 1, is not repeated.
It should be pointed out that the foregoing is merely a specific embodiment of the invention, but protection scope of the present invention is not limited to
In this, anyone skilled in the art in the technical scope disclosed by the present invention, can readily occur in variation or replace
It changes, should be covered by the protection scope of the present invention.The available prior art of each component part being not known in the present embodiment
It is realized.
Claims (8)
1. one kind recommends mode of resonance silicon carbide power tube drive circuit, it is characterised in that including DC voltage source, band inverse parallel two
The first power tube, the second power tube, the third power tube of pole pipe, high-frequency isolation transformer, resonant inductance, level shifting circuit,
By driving silicon carbide power pipe, third capacitor, the high-frequency isolation transformer include the first winding of primary side, primary side second around
Group, vice-side winding, level shifting circuit include first resistor, first capacitor, second resistance, the second capacitor and divide diode,
Wherein, the drain electrode of the anode connection third power tube of DC voltage source, source electrode connection the first winding of primary side of third power tube
The Same Name of Ends at different name end and the second winding of primary side, the Same Name of Ends of the first winding of primary side connect the drain electrode of the first power tube, primary side the
The different name end of two windings connects the drain electrode of the second power tube；The source electrode of the source electrode of first power tube and the second power tube is jointly and directly
The cathode of galvanic electricity potential source is connected；One end of the Same Name of Ends of vice-side winding and resonant inductance connects, the different name end of vice-side winding and the
One end of one resistance, one end of first capacitor are connected, and the other end of first resistor, the other end of first capacitor are carbonized with by driving
The source electrode of silicon power tube, the anode for dividing diode, third capacitor one end connected with ground, divide the cathode and second of diode
One end connection of one end of resistance, the second capacitor, the other end of second resistance, the other end of the second capacitor and resonant inductance it is another
The other end connection of one end, the grid for driving silicon carbide power pipe, third capacitor.
2. one kind according to claim 1 recommends mode of resonance silicon carbide power tube drive circuit, it is characterised in that: described
First power tube, the second power tube, third power tube are power silicon MOSFET.
3. one kind according to claim 1 recommends mode of resonance silicon carbide power tube drive circuit, it is characterised in that: described
High-frequency isolation transformer pair side resonant inductance is the leakage inductance of high-frequency isolation transformer.
4. one kind according to claim 1 recommends mode of resonance silicon carbide power tube drive circuit, it is characterised in that: described
The equal turn numbers of the first winding of primary side of high-frequency isolation transformer, three the second winding of primary side, vice-side winding windings.
5. a kind of a kind of control method for recommending mode of resonance silicon carbide power tube drive circuit as described in claim 1, special
Sign be the following steps are included:
Step 1: shutdown third power tube after the Td/2 time is connected in the first power tube and third power tube jointly；
Step 2: the second power tube is opened after dead time Ts, T (1- is connected in the second power tube and the first power tube jointly
D) the first power tube is turned off after/2；
Step 3: third power tube is opened after dead time Ts, when Td/2 is connected in third power tube and the second power tube jointly
Between after turn off third power tube；
Step 4: the first power tube is opened after dead time Ts, T (1- is connected in the second power tube and the first power tube jointly
D) after/2, the second power tube is turned off；
Step 5: third power tube is opened after dead time Ts, the first power tube, third power tube simultaneously turn on, and return to step
Rapid 1, it is recycled.
6. control method according to claim 5, it is characterised in that: it is open-minded that the dead time is greater than the second power tube
Or the sum of the transient time of shutdown and third power tube either off or on.
7. control method according to claim 5, it is characterised in that: the T is the first power tube or the second power tube
Switch periods.
8. control method according to claim 5, it is characterised in that: the d is the first power tube or the second power tube
Conducting dutycycle.
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| CN201811267339.2A CN109450264B (en) | 2018-10-29 | 2018-10-29 | Push-pull resonant type silicon carbide power tube driving circuit and control method thereof |
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| CN201811267339.2A CN109450264B (en) | 2018-10-29 | 2018-10-29 | Push-pull resonant type silicon carbide power tube driving circuit and control method thereof |
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