CN113937989B - Driving circuit and method for inhibiting SiC MOSFET crosstalk and drain current overshoot - Google Patents
Driving circuit and method for inhibiting SiC MOSFET crosstalk and drain current overshoot Download PDFInfo
- Publication number
- CN113937989B CN113937989B CN202111357518.7A CN202111357518A CN113937989B CN 113937989 B CN113937989 B CN 113937989B CN 202111357518 A CN202111357518 A CN 202111357518A CN 113937989 B CN113937989 B CN 113937989B
- Authority
- CN
- China
- Prior art keywords
- source
- crosstalk
- driving circuit
- electrode
- sic mosfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The invention relates to the technical field of wide bandgap semiconductor device driving, and discloses a driving circuit for inhibiting SiCMOSFET crosstalk and drain current overshoot, wherein a supply voltage source V2-H is introduced into a basic driving circuit of an upper bridge arm, and a supply voltage source V2-L is introduced into a basic driving circuit of a lower bridge arm and a crosstalk and overshoot inhibiting circuit. The voltage of the capacitor C2 is stabilized through the driving circuit, and the voltage of the common-source parasitic inductance ls_L is clamped, so that the decoupling of the ls_L is realized. The invention does not introduce additional active devices and controllers, and has high reliability; the structure is simple without introducing excessive transistors; the driving circuit does not introduce extra capacitance and resistance, and the switching speed is not affected; the influence caused by parasitic inductance of the source end is restrained, negative-pressure turn-off is added, misleading possibly existing in the device is avoided, crosstalk voltage and drain current overshoot phenomena of the gate source are restrained, meanwhile, the time of switching in a loop through the switch control capacitor is controlled, and extra power loss is avoided as much as possible.
Description
Technical Field
The invention relates to the technical field of wide bandgap semiconductor device driving, in particular to a driving circuit and method for inhibiting SiC MOSFET crosstalk and drain current overshoot.
Background
As a representative device of the third generation wide bandgap semiconductor, the SiC MOSFET has the remarkable advantages of high switching speed, low off loss, high withstand voltage and the like, and is an effective way for improving the performances of the power converter, such as efficiency, power density and the like. However, since SiC MOSFETs have high switching speeds and parasitic capacitances and the like, a change in gate potential is caused regardless of a change in current or voltage. Especially, when crosstalk occurs, the parasitic inductance of the source end can cause the potential of the source end to change greatly, and interference is brought to the gate source electrode, so that the working state of the MOS tube is affected, and misleading or even damage of a device can be caused under serious conditions. Meanwhile, the drain current has a current overshoot problem due to the influence of parasitic parameters, and the device can be damaged due to the fact that the drain current is too large. Therefore, in SiC MOSFET bridge circuits, attention needs to be paid to the problems of crosstalk and drain current overshoot.
CN113315354a discloses a low-impedance clamp driving circuit for suppressing SiC MOSFET crosstalk, which comprises an upper arm of SiC MOSFET and a lower arm of SiC MOSFET, and each arm includes a basic driving circuit and a crosstalk suppressing circuit, so that it is ensured that in the same arm, siC MOSFET will not be turned on by mistake when positive crosstalk occurs, and reverse breakdown will not occur when negative crosstalk occurs. However, the crosstalk suppression structure of the CN113315354a solution is mainly located at two ends of the gate source of the MOSFET, and introduces additional resistor and capacitor in the driving loop, which affects the switching speed of the MOSFET.
Disclosure of Invention
In view of the foregoing drawbacks of the prior art, an object of the present invention is to provide a driving circuit and method for suppressing SiC MOSFET crosstalk and drain current overshoot.
In order to achieve the above object, the present invention relates to a driving circuit for suppressing SiC MOSFET crosstalk and drain current overshoot, which comprises the following specific scheme:
the driving circuit for inhibiting the crosstalk of the SiC MOSFET and the overshoot of the drain current comprises an upper bridge arm and a lower bridge arm of the SiC MOSFET, wherein the upper bridge arm is only provided with a basic driving circuit, the lower bridge arm comprises a basic driving circuit and a crosstalk and overshoot inhibiting circuit, a power supply voltage source V2-H is introduced into the basic driving circuit of the upper bridge arm, the negative electrode of the power supply voltage source V2-H is simultaneously connected with the source electrode of a switch tube S2-H and one end of an auxiliary capacitor C3, and the positive electrode of the power supply voltage source V2-H is simultaneously connected with the negative electrode of the power supply voltage source V1-H and one end of a common source parasitic inductance Ls-H; and a power supply voltage source V2-L is introduced into the basic driving circuit and the crosstalk and overshoot suppression circuit of the lower bridge arm, wherein the negative electrode of the power supply voltage source V2-L is simultaneously connected with the source electrode of the switching tube S2-L and one end of the auxiliary capacitor C2, and the positive electrode of the power supply voltage source V2-L is simultaneously connected with the negative electrode of the power supply voltage source V1-L, one end of the common source parasitic inductance Ls-L, one end of the capacitor C1 and the negative electrode of the diode D2.
Further, the basic driving circuit of the upper bridge arm further comprises a switch tube S1_H and a grid resistor R4, the positive electrode of the power supply voltage source V1_H is connected with the drain electrode of the switch tube S1_H, the negative electrode of the power supply voltage source V1_H is connected with one end of a common source parasitic inductance ls_H of the upper bridge arm, and the other end of the common source parasitic inductance ls_H is connected with one end of an auxiliary capacitor C3 and the source electrode of the SiC MOSFET M1; the source electrode of the switching tube S1_H is connected with one end of the grid resistor R4 and the drain electrode of the switching tube S2_H; the other end of the gate resistor R4 is connected to the gate of the SiC MOSFET M1.
Further, the basic driving circuit of the lower bridge arm comprises a switching tube S1_L and a grid resistor R1, the positive electrode of the power supply voltage source V1_L is connected with the drain electrode of the switching tube S1_L, the negative electrode of the power supply voltage source V1_L is connected with one end of a common source parasitic inductance ls_L of the lower bridge arm, and the other end of the common source parasitic inductance ls_L is connected with the other end of the auxiliary capacitor C2 and the source electrode of the SiC MOSFET M2; the source electrode of the switching tube S1_L is connected with one end of the grid resistor R1 and the drain electrode of the switching tube S2_L; the other end of the gate resistor R1 is connected to the gate of the SiC MOSFET M2.
Further, the crosstalk and overshoot suppression circuit of the lower bridge arm further comprises a diode D1, a diode D2, a diode D3, a resistor R2, a resistor R3 and a triode Q1, wherein the cathode of the diode D1 is connected with the drain electrode of the SiC MOSFET and the collector electrode of the triode Q1, the anode of the diode D1 is connected with one end of the resistor R3 and the base electrode of the triode Q1, the other end of the resistor R3 is connected with the emitter electrode of the triode Q1, one end of the resistor R2 and the anode of the diode D2, and the other end of the resistor R2 is connected with the other end of the capacitor C1; the cathode of the diode D2 is also connected with one end of the common-source parasitic inductance ls_L, and one end of the diode D3 is connected with the drain electrode of the SiC MOSFET M2; the other end of the diode D3 is connected to one end of the common-source parasitic inductance ls_l.
Preferably, the switching transistors s1_h, s2_h, s1_l, s2_l and Q1 are NPN transistors.
Preferably, the on voltage in the basic driving circuit is 18V, and the off voltage is-5V.
Another aspect of the invention relates to a method of suppressing SiC MOSFET crosstalk and drain current overshoot.
By adopting the driving circuit for inhibiting the SiC MOSFET crosstalk and the drain current overshoot, when the drain current overshoot occurs in the lower bridge arm, the reverse current flowing through the diode D1 is increased, so that the triode Q1 is opened, the capacitor C1 absorbs the drain current, the drain current overshoot is inhibited, the Miller capacitance current flowing through the SiC MOSFET M2 is reduced, and the gate crosstalk is reduced.
Further, voltage sources v2_h and v2_l are introduced to stabilize the voltage of the capacitor C2, clamp the voltage of the common-source parasitic inductance ls_l, and realize decoupling of ls_l.
Further, the switching signals controlling the switch s1_h and the switch s2_h are complementary, and the switching signals controlling the switch s1_l and the switch s2_l are complementary.
Compared with the prior art, the invention has the following beneficial effects:
(1) The invention does not introduce additional active devices and controllers, and has high reliability; the structure is simple without introducing excessive transistors; the driving circuit does not introduce extra capacitance and resistance, and the switching speed is not affected;
(2) The driving circuit not only inhibits the influence caused by parasitic inductance of the source end, but also increases negative pressure turn-off, avoids possible misleading of devices, inhibits the phenomenon of cross-talk voltage and drain current overshoot of the gate and the source, and simultaneously avoids extra power loss as much as possible by controlling the time of the capacitor access loop through the switch.
Drawings
Other features, objects and advantages of the present invention will become more apparent upon reading of the detailed description of non-limiting embodiments, given with reference to the accompanying drawings in which:
fig. 1 is a driving circuit diagram of the present invention;
FIG. 2 is a conventional drive circuit switching waveform ("gate voltage Vg-time t" characteristic);
FIG. 3 is a switching waveform ("gate voltage Vg-time t" characteristic) in accordance with the present invention;
fig. 4 is a waveform of drain current of a conventional driving circuit;
FIG. 5 is a drain current waveform in the present invention;
Detailed Description
The present invention will be described in detail with reference to specific examples. The following examples will assist those skilled in the art in further understanding the present invention, but are not intended to limit the invention in any way. It should be noted that variations and modifications could be made by those skilled in the art without departing from the inventive concept. These are all within the scope of the present invention.
As shown in fig. 1, a driving circuit for suppressing SiC MOSFET crosstalk and drain current overshoot includes an upper arm and a lower arm of the SiC MOSFET, where the upper arm has only a basic driving circuit, and the lower arm includes a basic driving circuit and a crosstalk and overshoot suppression circuit.
The basic driving circuit of the upper bridge arm comprises a power supply voltage source V1-H, a power supply voltage source V2-H, a switching tube S1-H, a switching tube S2-H, a grid resistor R4 and an auxiliary capacitor C3. The positive electrode of the power supply voltage source V1H is connected with the drain electrode of the switching tube S1H; the negative electrode of the power supply voltage source V1H is connected with one end of the common source parasitic inductance ls_H of the upper bridge arm; the other end of the common source parasitic inductance ls_H is connected with one end of the auxiliary capacitor C3 and the source electrode of the SiC MOSFET M1; the source electrode of the switching tube S1_H is connected with one end of the grid resistor R4 and the drain electrode of the switching tube S2_H; the other end of the gate resistor R4 is connected with the gate of the SiC MOSFET M1; the source electrode of the switching tube S2_H is connected with the other end of the auxiliary capacitor C3 and the negative electrode of the power supply voltage source V2_H; the positive pole of the supply voltage source v2_h is connected to the negative pole of the supply voltage source v1_h and to one end of the common source parasitic inductance ls_h.
The basic driving circuit of the lower bridge arm comprises a power supply voltage source V1-L, a power supply voltage source V2-L, a switching tube S1-L, a switching tube S2-L, a grid resistor R1 and an auxiliary capacitor C2; the positive electrode of the power supply voltage source V1-L is connected with the drain electrode of the switching tube S1-L; the negative electrode of the power supply voltage source V1H is connected with one end of the common source parasitic inductance ls_L of the lower bridge arm; the other end of the common source parasitic inductance ls_l is connected with one end of the auxiliary capacitor C2 and the source electrode of the SiC MOSFET M2; the source electrode of the switching tube S1_L is connected with one end of the grid resistor R1 and the drain electrode of the switching tube S2_L; the other end of the gate resistor R1 is connected with the gate of the SiC MOSFET M2; the source electrode of the switching tube S2_L is connected with the other end of the auxiliary capacitor C2 and the negative electrode of the power supply voltage source V2_L; the positive pole of the supply voltage source v2_l is connected to the negative pole of the supply voltage source v1_l and to one end of the common source parasitic inductance ls_l.
The crosstalk and overshoot suppression circuit of the lower bridge arm comprises a diode D1, a diode D2, a diode D3, a resistor R2, a resistor R3, a triode Q1 and a capacitor C1; the cathode of the diode D1 is connected with the drain electrode of the SiC MOSFET and the collector electrode of the triode Q1; the anode of the diode D1 is connected with one end of a resistor R3 and the base electrode of the triode Q1; the other end of the resistor R3 is connected with the emitter of the triode Q1, one end of the resistor R2 and the anode of the diode D2; the other end of the resistor R2 is connected with one end of the capacitor C1; the other end of the capacitor C1 is connected with one end of the common-source parasitic inductance ls_L and the positive electrode of the power supply voltage source V2_L; the negative electrode of the diode D2 is connected with one end of the common-source parasitic inductance ls_l and the positive electrode of the power supply voltage source V2_L; one end of the diode D3 is connected with the drain electrode of the SiC MOSFET M2; the other end of the diode D3 is connected to one end of the common-source parasitic inductance ls_l.
The switching tube S1_H, the switching tube S2_H, the switching tube S1_L, the switching tube S2_L and the triode Q1 are NPN triodes.
In this embodiment, the on voltage in the basic driving circuit is 18V, and the off voltage is-5V.
By adopting the driving circuit for inhibiting the SiC MOSFET crosstalk and the drain current overshoot, when the drain current overshoot occurs in the lower bridge arm, the reverse current flowing through the diode D1 is increased, so that the triode Q1 is opened, the capacitor C1 absorbs the drain current, the drain current overshoot is inhibited, the Miller capacitance current flowing through the SiC MOSFET M2 is reduced, and the gate crosstalk is reduced.
According to the invention, the voltage sources V2-H and V2-L are introduced, so that the voltage of the capacitor C2 is stabilized at-5V, and the voltage of the common source parasitic inductance Ls-L is clamped, so that the decoupling of Ls-L is realized, the parasitic inductance of the source end of the power loop is greatly reduced, and the crosstalk caused by the induced voltage caused by the parasitic inductance of the source end is reduced.
The switch signals controlling the switch s1_h and the switch s2_h are complementary, and the switch signals controlling the switch s1_l and the switch s2_l are complementary. When the switch S1_L is opened, the switch S2_L is closed, negative pressure is provided for the MOSFET, the turn-off speed is increased, and meanwhile, the turn-off of the negative pressure can prevent misleading caused by crosstalk. Specifically, when the forward crosstalk occurs, the reverse current of the diode D1 suddenly increases, and the increased reverse current flows through the resistor R3 to generate a voltage drop, so that the triode Q1 is turned on, a low-impedance branch is provided, the current at the drain terminal is absorbed by the capacitor C1, the overshoot phenomenon of the drain current can be reduced, and meanwhile, the current flowing through the miller capacitor to the gate electrode is reduced, the voltage drop generated on the gate electrode resistor is reduced, and the forward crosstalk is inhibited.
When the reverse crosstalk comes, at the moment, the switch S1_L is closed, the switch S2_L is conducted, and at the moment, the voltage source of-5V can directly clamp the grid source electrode of the MOSFET to inhibit the reverse crosstalk.
Fig. 2 shows a conventional driving circuit switching waveform, fig. 3 shows a switching waveform according to the present invention, fig. 4 shows a drain current waveform of a conventional driving circuit, and fig. 5 shows a drain current waveform according to the present invention. It can be seen that both positive and negative crosstalk voltage spikes are suppressed.
The foregoing describes specific embodiments of the present invention. It is to be understood that the invention is not limited to the particular embodiments described above, and that various changes and modifications may be made by one skilled in the art within the scope of the claims without affecting the spirit of the invention.
Claims (6)
1. The driving circuit for inhibiting the crosstalk of the SiC MOSFET and the overshoot of the drain current is characterized by comprising an upper bridge arm and a lower bridge arm of the SiC MOSFET, wherein the upper bridge arm is only provided with a basic driving circuit, the lower bridge arm comprises a basic driving circuit and a crosstalk and overshoot inhibiting circuit, a power supply voltage source V2-H is introduced into the basic driving circuit of the upper bridge arm, the negative electrode of the power supply voltage source V2-H is simultaneously connected with the source of a switch tube S2-H and one end of an auxiliary capacitor C3, and the positive electrode of the power supply voltage source V2-H is simultaneously connected with the negative electrode of the power supply voltage source V1-H and one end of a common source parasitic inductance Ls-H; introducing a power supply voltage source V2-L into the basic driving circuit and the crosstalk and overshoot suppression circuit of the lower bridge arm, wherein the negative electrode of the power supply voltage source V2-L is simultaneously connected with the source electrode of the switching tube S2-L and one end of the auxiliary capacitor C2, and the positive electrode of the power supply voltage source V2-L is simultaneously connected with the negative electrode of the power supply voltage source V1-L, one end of the common source parasitic inductance Ls-L, one end of the capacitor C1 and the negative electrode of the diode D2;
the basic driving circuit of the upper bridge arm comprises a switching tube S1_H and a grid resistor R4, wherein the positive electrode of a power supply voltage source V1_H is connected with the drain electrode of the switching tube S1_H, the negative electrode of the power supply voltage source V1_H is connected with one end of a common source parasitic inductance ls_H of the upper bridge arm, and the other end of the common source parasitic inductance ls_H is connected with the other end of an auxiliary capacitor C3 and the source electrode of a SiC MOSFET M1; the source electrode of the switching tube S1_H is connected with one end of the grid resistor R4 and the drain electrode of the switching tube S2_H; the other end of the gate resistor R4 is connected with the gate of the SiC MOSFET M1;
the basic driving circuit of the lower bridge arm comprises a switching tube S1_L and a grid resistor R1, wherein the positive electrode of a power supply voltage source V1_L is connected with the drain electrode of the switching tube S1_L, the negative electrode of the power supply voltage source V1_L is connected with one end of a common source parasitic inductance ls_L of the lower bridge arm, and the other end of the common source parasitic inductance ls_L is connected with the other end of an auxiliary capacitor C2 and the source electrode of a SiC MOSFET M2; the source electrode of the switching tube S1_L is connected with one end of the grid resistor R1 and the drain electrode of the switching tube S2_L; the other end of the gate resistor R1 is connected with the gate of the SiC MOSFET M2;
the crosstalk and overshoot suppression circuit of the lower bridge arm further comprises a diode D1, a diode D2, a diode D3, a resistor R2, a resistor R3 and a triode Q1, wherein the cathode of the diode D1 is connected with the drain electrode of the SiC MOSFET and the collector electrode of the triode Q1, the anode of the diode D1 is connected with one end of the resistor R3 and the base electrode of the triode Q1, the other end of the resistor R3 is connected with the emitter electrode of the triode Q1, one end of the resistor R2 and the anode of the diode D2, and the other end of the resistor R2 is connected with the other end of the capacitor C1; the cathode of the diode D2 is also connected with one end of the common-source parasitic inductance ls_L, and one end of the diode D3 is connected with the drain electrode of the SiC MOSFET M2; the other end of the diode D3 is connected to one end of the common-source parasitic inductance ls_l.
2. The driving circuit for suppressing crosstalk and drain current overshoot of a SiC MOSFET according to claim 1, wherein said switching transistors s1_h, s2_h, s1_l, s2_l, Q1 are NPN transistors.
3. The drive circuit for suppressing SiC MOSFET crosstalk and drain current overshoot of claim 1, wherein the on voltage in said basic drive circuit is 18V and the off voltage is-5V.
4. A method for suppressing SiC MOSFET crosstalk and drain current overshoot, wherein the driving circuit for suppressing SiC MOSFET crosstalk and drain current overshoot according to claim 1 is used, and when the lower arm generates drain current overshoot, the reverse current flowing through diode D1 increases, so that transistor Q1 is turned on, capacitor C1 absorbs drain current, suppresses drain current overshoot, and reduces miller capacitance current flowing through SiC MOSFET M2, so that gate crosstalk is reduced.
5. A method for suppressing SiC MOSFET crosstalk and drain current overshoot, characterized by employing a driving circuit for suppressing SiC MOSFET crosstalk and drain current overshoot according to any one of claims 1-3, introducing voltage sources v2_h and v2_l, stabilizing the voltage of capacitor C2, and clamping the voltage of common source parasitic inductance ls_l, to achieve decoupling of ls_l.
6. The method of suppressing SiC MOSFET crosstalk and drain current overshoot of claim 5, wherein the switching signals controlling switch s1_h and switch s2_h are complementary and the switching signals controlling switch s1_l and switch s2_l are complementary.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111357518.7A CN113937989B (en) | 2021-11-16 | 2021-11-16 | Driving circuit and method for inhibiting SiC MOSFET crosstalk and drain current overshoot |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111357518.7A CN113937989B (en) | 2021-11-16 | 2021-11-16 | Driving circuit and method for inhibiting SiC MOSFET crosstalk and drain current overshoot |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113937989A CN113937989A (en) | 2022-01-14 |
| CN113937989B true CN113937989B (en) | 2023-09-01 |
Family
ID=79286832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111357518.7A Active CN113937989B (en) | 2021-11-16 | 2021-11-16 | Driving circuit and method for inhibiting SiC MOSFET crosstalk and drain current overshoot |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113937989B (en) |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106100297A (en) * | 2016-08-02 | 2016-11-09 | 北京交通大学 | Drive circuit based on silicon carbide MOSFET |
| CN106385165A (en) * | 2016-11-08 | 2017-02-08 | 西安交通大学 | SiC MOSFET driving circuit with crosstalk suppression capability |
| CN107342756A (en) * | 2017-08-16 | 2017-11-10 | 重庆大学 | A kind of improvement gate-drive device of suppression SiC MOSFET bridge arm crosstalks |
| CN107769530A (en) * | 2017-11-29 | 2018-03-06 | 上海空间电源研究所 | The SiC switch tube driving circuits and method of synchronous rectification Buck converters |
| CN109672336A (en) * | 2019-01-14 | 2019-04-23 | 南京工程学院 | A kind of SiC MOSFET gate pole auxiliary circuit |
| CN110048698A (en) * | 2019-04-17 | 2019-07-23 | 西安电子科技大学 | Inhibit the driving circuit of SiC MOSFET grid crosstalk |
| CN110212740A (en) * | 2019-05-15 | 2019-09-06 | 中国矿业大学 | A kind of driving circuit inhibiting the crosstalk of SiC MOSFET gate pole and oscillation |
| CN111162671A (en) * | 2020-01-22 | 2020-05-15 | 北京交通大学 | Multi-level active driving circuit for inhibiting SiC MOSFET crosstalk |
| CN111865053A (en) * | 2020-06-09 | 2020-10-30 | 北京交通大学 | Negative-pressure turn-off driving circuit based on wide-bandgap power device |
| CN112737312A (en) * | 2020-12-28 | 2021-04-30 | 山东大学 | Drive circuit for inhibiting crosstalk of SiC MOSFET bridge circuit |
| CN113315354A (en) * | 2021-06-24 | 2021-08-27 | 南通大学 | Low-impedance clamping drive circuit for inhibiting crosstalk of SiC MOSFET (Metal-oxide-semiconductor field Effect transistor) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8847631B2 (en) * | 2011-12-23 | 2014-09-30 | General Electric Company | High speed low loss gate drive circuit |
| CN108539964B (en) * | 2018-08-08 | 2018-11-20 | 上海颛芯企业管理咨询合伙企业（有限合伙） | The driving circuit and its device of power switch tube |
-
2021
- 2021-11-16 CN CN202111357518.7A patent/CN113937989B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106100297A (en) * | 2016-08-02 | 2016-11-09 | 北京交通大学 | Drive circuit based on silicon carbide MOSFET |
| CN106385165A (en) * | 2016-11-08 | 2017-02-08 | 西安交通大学 | SiC MOSFET driving circuit with crosstalk suppression capability |
| CN107342756A (en) * | 2017-08-16 | 2017-11-10 | 重庆大学 | A kind of improvement gate-drive device of suppression SiC MOSFET bridge arm crosstalks |
| CN107769530A (en) * | 2017-11-29 | 2018-03-06 | 上海空间电源研究所 | The SiC switch tube driving circuits and method of synchronous rectification Buck converters |
| CN109672336A (en) * | 2019-01-14 | 2019-04-23 | 南京工程学院 | A kind of SiC MOSFET gate pole auxiliary circuit |
| CN110048698A (en) * | 2019-04-17 | 2019-07-23 | 西安电子科技大学 | Inhibit the driving circuit of SiC MOSFET grid crosstalk |
| CN110212740A (en) * | 2019-05-15 | 2019-09-06 | 中国矿业大学 | A kind of driving circuit inhibiting the crosstalk of SiC MOSFET gate pole and oscillation |
| CN111162671A (en) * | 2020-01-22 | 2020-05-15 | 北京交通大学 | Multi-level active driving circuit for inhibiting SiC MOSFET crosstalk |
| CN111865053A (en) * | 2020-06-09 | 2020-10-30 | 北京交通大学 | Negative-pressure turn-off driving circuit based on wide-bandgap power device |
| CN112737312A (en) * | 2020-12-28 | 2021-04-30 | 山东大学 | Drive circuit for inhibiting crosstalk of SiC MOSFET bridge circuit |
| CN113315354A (en) * | 2021-06-24 | 2021-08-27 | 南通大学 | Low-impedance clamping drive circuit for inhibiting crosstalk of SiC MOSFET (Metal-oxide-semiconductor field Effect transistor) |
Non-Patent Citations (1)
| Title |
|---|
| SiC MOSFET串扰及高频振荡抑制研究;刘畅;中国优秀硕士学位论文全文数据库（工程科技Ⅱ辑）;第2021卷(第1期);C042-1657 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113937989A (en) | 2022-01-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11611339B2 (en) | Power switch drive circuit and device | |
| US11012063B2 (en) | GaN switch with integrated failsafe pulldown circuit | |
| US10063224B2 (en) | Driver circuit and semiconductor module having same | |
| US20230291399A1 (en) | Miller clamping device for parallel switching transistors and driver comprising same | |
| US5481219A (en) | Apparatus and method for generting negative bias for isolated MOSFET gate-drive circuits | |
| US4500801A (en) | Self-powered nonregenerative fast gate turn-off FET | |
| CN109494969A (en) | A kind of driving circuit of manufacturing silicon carbide semiconductor field-effect tube | |
| CN112737312A (en) | Drive circuit for inhibiting crosstalk of SiC MOSFET bridge circuit | |
| US4481434A (en) | Self regenerative fast gate turn-off FET | |
| CN111600461A (en) | Improved SiC MOSFET bridge arm crosstalk suppression driving circuit and method | |
| CN108649938A (en) | A kind of metal-oxide-semiconductor driving circuit inhibiting negative drive voltage spike | |
| CN109921620B (en) | Crosstalk suppression driving circuit and control method | |
| JPS62231518A (en) | High speed switch-off circuit of conductivity modulated field effect transistor | |
| CN115173676A (en) | SiC MOSFET drive circuit for inhibiting overshoot peak | |
| CN113937989B (en) | Driving circuit and method for inhibiting SiC MOSFET crosstalk and drain current overshoot | |
| CN113872420A (en) | Improved gate drive circuit for inhibiting bridge arm crosstalk of SiC-MOSFET (silicon carbide-metal oxide semiconductor field effect transistor) | |
| JPS6271257A (en) | Protecting circuit for induction load switch transistor | |
| CN114024432B (en) | Grid crosstalk suppression circuit of SiC MOSFET power device | |
| US4698519A (en) | Monolithically integratable high-efficiency control circuit for switching transistors | |
| CN114865890A (en) | High-anti-interference circuit for GaN power tube half-bridge drive | |
| JP7151569B2 (en) | gate drive circuit | |
| JP2002153043A (en) | Gate-driving device for voltage-driving semiconductor element | |
| CN215581093U (en) | Push-pull type driving device | |
| CN204615634U (en) | Insulated gate bipolar transistor is suppressed to turn off the circuit of spike | |
| CN111725978B (en) | SiC MOSFET gate driving circuit with negative pressure turn-off and crosstalk suppression functions |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |